JP2022033187A - Semiconductor light emitting device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor light emitting device that has a plurality of conductive parts that can be efficiently formed by electrolytic plating without causing reduction in luminous efficacy.

SOLUTION: A semiconductor light emitting device comprises: a substrate; a plurality of first plated conductive parts; a plurality of second plated conductive parts; a first intermediate conductive part, a second intermediate conductive part, a third plated conductive part, a fourth plated conductive part, and a plurality of LED chips. The semiconductor light emitting device further comprises first plated wiring and second plated wiring. The first plated wiring and the second plated wiring each extend from a first edge of the substrate up to a second edge of the substrate. When seen in a thickness direction, the plurality of LED chips is sandwiched between the first plated wiring and the second plated wiring in a first direction. The first plated wiring and the second plated wiring are interposed between a surface of the substrate and a frame part of the substrate. When seen in the thickness direction, the first plated wiring and the second plated wiring are located separate from a concave part of the substrate.

SELECTED DRAWING: Figure 2

COPYRIGHT: (C)2022,JPO&INPIT

Description

The present invention relates to a semiconductor light emitting device.

FIG. 27 shows an example of a conventional semiconductor light emitting device. In the semiconductor light emitting device 9 shown in the figure, a lead 92 is provided on a base material 91. The LED chip 93 is mounted on the lead 92. The LED chip 93 has a semiconductor layer 94 and a submount substrate 95. The semiconductor layer 94 has, for example, an n-type semiconductor layer, a p-type semiconductor layer, and an active layer sandwiched between them. The submount substrate 95 supports the semiconductor layer 94 and is made of, for example, Si. The LED chip 93 is conducted to the lead 92 by the wire 96. The sealing resin 97 covers the LED chip 93 and transmits light from the LED chip 93.

When the LED chip 93 emits light, heat is mainly generated from the active layer. This heat is dissipated by being transferred to the lead 92 and the base material 91. However, the submount substrate 95 is interposed between the active layer and the lead 92. The submount substrate 95 hinders heat dissipation from the LED chip 93. Therefore, there is a problem that the luminous efficiency of the LED chip 93 is lowered.

FIG. 28 shows another example of the conventional semiconductor light emitting device (see, for example, Patent Document 2). In the semiconductor light emitting device 900 shown in the figure, the LED chip 902 is mounted on the substrate 901. The LED chip 902 is surrounded by a frame-shaped reflector 905. The space surrounded by the reflector 905 is filled with the sealing resin 906. The LED chip 902 has, for example, a submount substrate 903 made of Si and a semiconductor layer 904 laminated on the submount substrate 903. The semiconductor layer 904 is conductive to the substrate 901 via the submount substrate 903.

The light emitted laterally from the LED chip 902 is reflected upward by the reflector 905. In order to emit more reflected light from the semiconductor light emitting device 900, it is effective to greatly incline the inner wall surface of the reflector 905 from an angle perpendicular to the substrate 901. However, the more the inner wall surface is tilted, the larger the semiconductor light emitting device 900 becomes. There is a strong demand for miniaturization of the semiconductor light emitting device 900 due to space restrictions such as the electronic devices to be mounted. Therefore, it is difficult to achieve both miniaturization and high brightness of the semiconductor light emitting device 900.

Japanese Unexamined Patent Publication No. 2006-245231 Japanese Unexamined Patent Publication No. 2004-119743

The present invention has been conceived under the above circumstances, and provides a semiconductor light emitting device capable of efficiently forming a plurality of conductive portions by electrolytic plating without causing a decrease in luminous efficiency. The task is to do.

According to the first aspect of the present invention, a plurality of LED chips and a case on which the plurality of LED chips are mounted are provided, and each of the LED chips is a substrate and an n-type semiconductor layer laminated on the substrate. It has an active layer, a p-type semiconductor layer, an anode electrode conducting on the p-type semiconductor layer, and a cathode electrode conducting on the n-type semiconductor layer, and the anode electrode and the cathode electrode face the case. The case is mounted on the case, and the case is formed on the back surface of a substrate made of ceramic and having a front surface and a back surface, and a surface layer including a plurality of anode pads and cathode pads formed on the front surface. A back surface layer including the anode-mounted electrode and the cathode-mounted electrode, and a plurality of anode-penetrating wirings that conduct the plurality of anode pads and the anode-mounted electrode and penetrate at least a part in the thickness direction of the substrate. A semiconductor characterized by having a wiring having the plurality of cathode pads conducting the cathode mounting electrode and having a plurality of cathode penetrating wirings penetrating at least a part of the substrate in the thickness direction. A light emitting device is provided.

In the practice of the present invention, the plurality of anode penetrating wirings preferably include a plurality of full-thickness anode penetrating wirings penetrating the substrate from the front surface to the back surface.

In the practice of the present invention, the wiring preferably has an intermediate layer located between the front surface and the back surface in the thickness direction of the base material.

In the practice of the present invention, the plurality of cathode penetrating wirings are preferably one or more surface-side cathode penetrating wirings penetrating the base material from the front surface to the intermediate layer, and the bases from the intermediate layer to the back surface. Includes one or more backside cathode penetrating wires that penetrate the material.

In the practice of the present invention, the intermediate layer preferably has a cathode relay wiring connected to the front surface side cathode penetration wiring and the back surface side cathode penetration wiring.

In the practice of the present invention, the surface layer preferably has an anode-plated wiring and a cathode-plated wiring extending from one end of the base material to the other end of the base material in the thickness direction of the base material.

In the practice of the present invention, the plurality of anode penetrating wirings preferably include a plating anode penetrating wiring connecting the anode plated wiring and the anode mounting electrode.

In the practice of the present invention, the plurality of cathode penetrating wirings preferably include a cathode penetrating wiring for plating connecting the cathode plating wiring and the cathode mounting electrode.

In the practice of the present invention, preferably, among the plurality of anode penetrating wirings, those exposed on the surface are covered with the plurality of anode pads on the surface side end surface thereof.

In the practice of the present invention, preferably, among the plurality of cathode penetrating wirings, those exposed to the surface are covered with the plurality of cathode pads on the surface side end surface thereof.

In the practice of the present invention, preferably, among the plurality of anode penetrating wirings exposed on the back surface, the back surface side end surface thereof is covered with the anode mounting electrode.

In the practice of the present invention, preferably, among the plurality of cathode penetrating wirings exposed on the back surface, the back surface side end surface thereof is covered with the cathode mounting electrode.

In the practice of the present invention, the plurality of anode penetrating wirings and the plurality of cathode penetrating wirings are preferably made of Ag.

In the practice of the present invention, the plurality of anode pads and cathode pads are preferably made of Au.

In the practice of the present invention, the anode mounting electrode and the cathode mounting electrode are preferably made of Au.

In the practice of the present invention, the wiring preferably has a bypass cathode pad and a bypass anode pad formed on the surface thereof, and the plurality of anode penetrating wirings have the bypass cathode pad and the anode mounting electrode. The bypass cathode penetrating wiring for conducting is included, and the plurality of cathode penetrating wiring includes a bypass anode penetrating wiring for conducting the bypass anode pad and the cathode mounting electrode.

In the practice of the present invention, a Zener diode is preferably conduction-bonded to the bypass cathode pad, and the bypass anode pad is provided with a wire for conducting the Zener diode.

In the practice of the present invention, the case is preferably formed with a housing recess for accommodating the plurality of LED chips in the thickness direction thereof.

In the practice of the present invention, the accommodating recess is preferably filled with a sealing resin that covers the plurality of LED chips.

In the practice of the present invention, the sealing resin is preferably mixed with a fluorescent material that emits light having a wavelength different from the light from the LED chip when excited by the light from the LED chip.

In the practice of the present invention, the case is preferably substantially rectangular in the thickness direction, and corner recesses having a quarter-circular cross-sectional shape in the thickness direction are formed at the four corners thereof.

In the practice of the present invention, a first recess is preferably formed in at least one of the plurality of anode penetrating wirings and the plurality of cathode penetrating wirings, and the surface layer is formed on the surface layer in terms of the thickness of the base material. A second recess is formed so as to overlap the first recess, and a filling portion filled in the second recess is further provided. The filling portion is one of the plurality of LED chips in the thickness direction of the base material. It overlaps with one.

In carrying out the present invention, it is preferable to further include a joint portion interposed between any one of the plurality of LED chips and the surface layer, and the filling portion is interposed between the joint portion and the surface layer. And, it is in contact with both the joint portion and the surface layer.

In the practice of the present invention, the filling portion is preferably made of a conductive material.

In the practice of the present invention, the filling portion is preferably made of an alloy of Au and Sn.

In the practice of the present invention, the joint is preferably made of a conductive material.

In the practice of the present invention, the joint is preferably made of an alloy of Au and Sn.

According to the second aspect of the present invention, the semiconductor light emitting device includes one or more LED chips, a front surface on which the LED chips are mounted, and a case having a back surface located on the opposite side of the front surface. The case includes a base material having an inner wall surface surrounding the LED chip, an inner edge located on the LED chip side, an outer edge in contact with the inner wall surface, connecting these inner edges and outer edges, and from the inner edge. Provided is a semiconductor light emitting device comprising a reflective resin having a reflective surface inclined so as to be separated from the surface toward the outer edge.

In the practice of the present invention, the reflective resin preferably has a higher reflectance than the substrate.

In the practice of the present invention, the reflective resin is preferably white.

In the practice of the present invention, the substrate is preferably made of ceramic.

Preferably, in the practice of the present invention, the case comprises a lead that conducts to the LED chip and at least a part thereof is covered with the base material, and the base material is a thermosetting resin or heat. Contains plastic resin.

In the practice of the present invention, the height from the surface to the outer edge is preferably higher than the height from the surface to the active layer of the LED chip.

In the practice of the present invention, the inner wall surface is preferably at right angles to the surface.

In the practice of the present invention, it is preferable to include a bypass function element for preventing an excessive reverse voltage from being applied to the LED chip, and the reflection resin covers the bypass function element.

In the practice of the present invention, the reflective resin preferably covers the wire connected to the bypass function element.

In the practice of the present invention, the base material is preferably recessed from the front surface to the back surface side, is separated from the LED chip, and has a damming recess for accommodating the bypass function element.

In the practice of the present invention, the inner edge preferably coincides with the edge of the damming recess.

In the practice of the present invention, the damming recess preferably accommodates a pad to which a wire connected to the bypass function element is bonded.

In the practice of the present invention, the damming recess preferably has a surrounding portion surrounding the LED chip.

In the practice of the present invention, it is preferable to include a plurality of the LED chips, and the reflective resin has a protruding portion that penetrates between the LED chips adjacent to each other from the surrounding portion.

In the practice of the present invention, the LED chip is preferably located closer to the center of the case than the portion inserted between the adjacent LED chips.

In the practice of the present invention, the LED chip is preferably a flip chip type having an anode electrode and a cathode electrode facing the surface.

In the practice of the present invention, the inner edge of the reflective resin is preferably separated from the LED chip.

In the practice of the present invention, the LED chip is preferably a two-wire type having an anode electrode and a cathode electrode located on the opposite side of the surface and to which wires are connected to each other.

In the practice of the present invention, the inner edge of the reflective resin is preferably separated from the LED chip.

Preferably, in the practice of the present invention, the case comprises an anode pad and a cathode pad to which a wire connected to the LED chip is bonded, and the anode pad and the cathode pad are arranged outside the LED chip. Has been done.

In the practice of the present invention, the reflective resin preferably covers the anode pad and the cathode pad.

In the practice of the present invention, the LED chip preferably has an n-type semiconductor layer, an active layer, a p-type semiconductor layer, and a submount substrate that supports them, which are laminated to each other.

In the practice of the present invention, the reflective resin preferably covers all of the surface surrounded by the inner wall surface except the portion to which the submount substrate is joined.

In the practice of the present invention, it is preferable that the transparent resin that covers the LED chip and the reflective resin and transmits the light from the LED chip emits light having a different wavelength by being excited by the light from the LED chip. A sealing resin made of a material mixed with the material is provided.

Preferably, in the practice of the present invention, the case includes a front surface layer, a back surface layer, a plurality of anode penetration wirings, and a plurality of cathode penetration wirings, wherein the surface layer is composed of a plurality of each formed on the surface of the substrate. The back surface layer includes an anode pad and a cathode pad, the back surface layer includes an anode mounting electrode and a cathode mounting electrode formed on the back surface of the substrate, and the plurality of anode penetrating wirings include the plurality of anode pads and the anode mounting electrode. And penetrates at least a part of the base material in the thickness direction, and the plurality of cathode penetrating wires conduct the plurality of cathode pads and the cathode mounting electrode, and the base material. It penetrates at least a part of the thickness direction of.

In the practice of the present invention, a first recess is preferably formed in at least one of the plurality of anode penetrating wirings and the plurality of cathode penetrating wirings, and the surface layer is formed on the surface layer in terms of the thickness of the base material. A second recess is formed so as to overlap the first recess, and a filling portion filled in the second recess is further provided. The filling portion is one of the plurality of LED chips in the thickness direction of the base material. It overlaps with one.

In carrying out the present invention, it is preferable to further include a joint portion interposed between any one of the plurality of LED chips and the surface layer, and the filling portion is interposed between the joint portion and the surface layer. And, it is in contact with both the joint portion and the surface layer.

In the practice of the present invention, the filling portion is preferably made of a conductive material.

In the practice of the present invention, the filling portion is preferably made of an alloy of Au and Sn.

In the practice of the present invention, the joint is preferably made of a conductive material.

In the practice of the present invention, the joint is preferably made of an alloy of Au and Sn.

Other features and advantages of the invention will be more apparent by the detailed description given below with reference to the accompanying drawings.

It is a main part plan view which shows an example of the semiconductor light emitting apparatus of 1st Embodiment of this invention. It is sectional drawing which follows the II-II line of FIG. FIG. 3 is an enlarged cross-sectional view of a main part showing an example of an LED chip used in the semiconductor light emitting device of FIG. 1. It is a main part plan view when it is assumed that the semiconductor light emitting device of FIG. 1 is cut by the plane along the IV-IV line of FIG. It is a main part plan view when it is assumed that the semiconductor light emitting device of FIG. 1 is cut by the plane along the VV line of FIG. It is a bottom view which shows the semiconductor light emitting device of FIG. It is a main part plan view which shows an example of the semiconductor light emitting device of 2nd Embodiment of this invention. FIG. 7 is a cross-sectional view taken along the line VIII-VIII of FIG. FIG. 8 is a partially enlarged cross-sectional view showing a part of the semiconductor light emitting device shown in FIG. 8 in an enlarged manner. It is a partially enlarged sectional view of the semiconductor light emitting device which concerns on the modification of the 2nd Embodiment of this invention. It is a main part plan view which shows the semiconductor light emitting apparatus based on 3rd Embodiment of this invention. It is a bottom view which shows the semiconductor light emitting device of FIG. 11 is a cross-sectional view taken along the line XIII-XIII of FIG. It is sectional drawing which shows the LED chip used for the semiconductor light emitting device of FIG. It is a main part plan view which shows the semiconductor light emitting device based on 4th Embodiment of this invention. It is sectional drawing which follows the XVI-XVI line of FIG. It is a main part plan view which shows the semiconductor light emitting apparatus based on 5th Embodiment of this invention. It is sectional drawing which follows the XVIII-XVIII line of FIG. It is sectional drawing which shows the LED chip used for the semiconductor light emitting device of FIG. It is a main part plan view which shows the semiconductor light emitting apparatus based on the 6th Embodiment of this invention. It is sectional drawing which follows the XXI-XXI line of FIG. It is sectional drawing which shows the LED chip used for the semiconductor light emitting device of FIG. It is a main part plan view which shows an example of the semiconductor light emitting device of 7th Embodiment of this invention. FIG. 3 is a cross-sectional view taken along the line XXIV-XXIV of FIG. 23. It is a partially enlarged sectional view showing a part of the semiconductor light emitting device shown in FIG. 24 in an enlarged manner. It is a partially enlarged sectional view of the semiconductor light emitting device which concerns on the modification of the 7th Embodiment of this invention. It is sectional drawing of the main part which shows an example of the conventional semiconductor light emitting device. It is sectional drawing which shows an example of the conventional semiconductor light emitting device.

Hereinafter, embodiments of the present invention will be specifically described with reference to the drawings.

1 to 6 show an example of a semiconductor light emitting device according to the first embodiment of the present invention and an example of an LED chip used therein. The semiconductor light emitting device A1 of the present embodiment includes a case 2, a plurality of LED chips 5, a Zener diode 6, and a sealing resin 7. In FIG. 1, the sealing resin 7 is omitted for the sake of understanding.

The case 2 serves as a base for the semiconductor light emitting device A1 and has a base material 3 and wiring 4. The size of the case 2 is about 5 to 10 mm square in plan view and about 1.0 mm in thickness.

The base material 3 has a thick plate shape having a substantially rectangular shape in a plan view, and is made of a ceramic such as alumina. In the present embodiment, as this ceramic, a material called a low-temperature co-fired ceramic, which has a relatively low firing temperature of about 900 ° C., is used. This low-temperature co-fired ceramic can be fired at the same time as the metal that is the material of the wiring 4 due to the low firing temperature. A storage recess 33 is formed in the center of the base material 3. The accommodating recess 33 accommodates a plurality of LED chips 5, and has a circular shape in a plan view. Corner recesses 34 are formed at the four corners of the base material 3. The corner recess 34 is a part of a through hole provided for appropriately dividing the ceramic material in the manufacturing method of the semiconductor light emitting device A1, and is a groove having a quarter-circular cross section. The base material 3 has a front surface 31 and a back surface 32. In the present embodiment, the depth of the accommodating recess 33 is set to, for example, about 0.6 mm.

The wiring 4 is used as a path for supplying DC power to a plurality of LED chips 5, and is a front surface layer 41, an intermediate layer 42, a back surface layer 43, a plurality of anode penetrating wirings 44, and a plurality of cathodes. It has a through wiring 45.

FIG. 4 is a plan view of a main part assuming that the semiconductor light emitting device A1 is cut along a plane along the IV-IV line of FIG. In the present invention, for convenience, a portion of the wiring 4 formed on the circular surface 31 surrounded by the accommodating recess 33 and the surface coexisting with the surface 31 in the thickness direction of the base material 3 is formed on the surface. It is referred to as layer 41.

The surface layer 41 includes a plurality of anode pads 41a, a plurality of cathode pads 41b, a bypass cathode pad 41c, a bypass anode pad 41d, an anode plated wiring 41e, and a cathode plated wiring 41f. In the present embodiment, the portion of the surface layer 41 excluding the anode-plated wiring 41e and the cathode-plated wiring 41f is made of Au, and the anode-plated wiring 41e and the cathode-plated wiring 41f are made of an appropriately selected metal including Au.

The plurality of anode pads 41a and the plurality of cathode pads 41b are for mounting the LED chip 5. As is often shown in FIG. 4, the anode pads 41a and the cathode pads 41b are arranged as a pair adjacent to each other. In the present embodiment, five pairs of the anode pad 41a and the cathode pad 41b are formed. Each anode pad 41a has three parallel branched portions, a strip-shaped portion connected at right angles to these branched portions, and a circular portion connected to the strip-shaped portion. The cathode pad 41b has a band-shaped portion and a circular portion connected to the band-shaped portion.

The bypass cathode pad 41c and the bypass anode pad 41d are for mounting a bypass function element for avoiding an excessive reverse voltage from being applied to the LED chip 5, and in the present embodiment, the bypass function element is used. The Zener diode 6 is mounted as a above. The bypass cathode pad 41c has a circular shape, and the bypass anode pad 41d has a rectangular portion and a circular portion connected to the rectangular portion.

The anode-plated wiring 41e and the cathode-plated wiring 41f are used to form a plurality of anode pads 41a, a plurality of cathode pads 41b, a bypass cathode pad 41c, a bypass anode pad 41d, and a back surface layer 43 by plating. The anode-plated wiring 41e and the cathode-plated wiring 41f extend substantially parallel to each other from the upper end to the lower end of the base material 3 in FIG.

The intermediate layer 42 is formed substantially at the center of the front surface 31 and the back surface 32 (about 0.2 mm in depth from the surface 31) in the thickness direction of the base material 3. FIG. 5 is a plan view of a main part assuming that the semiconductor light emitting device A1 is cut along a plane along the VV line of FIG. 2. As shown in this figure, the intermediate layer 42 includes the cathode relay wiring 42a. The cathode relay wiring 42a has a substantially pentagonal portion, a strip-shaped portion connected to the pentagonal portion, and a strip-shaped portion connected to the strip-shaped portion at a right angle.

As shown in FIG. 6, the back surface layer 43 is formed on the back surface 32 of the base material 3, and has an anode mounting electrode 43a and a cathode mounting electrode 43b. The anode mounting electrode 43a and the cathode mounting electrode 43b are used for surface mounting the semiconductor light emitting device A1 on, for example, a circuit board. In the present embodiment, the anode mounting electrode 43a and the cathode mounting electrode 43b are made of Au. The anode mounting electrode 43a has a substantially rectangular shape and covers a region of about 2/3 on the right side of the back surface 32 of the base material 3 in FIG. The cathode mounting electrode 43b has a long rectangular shape and covers a region of about 1/4 on the left side of the back surface 32.

The plurality of anode penetration wiring 44 includes a plurality of full-thickness anode penetration wiring 44a, a plurality of plating anode penetration wiring 44b, and a bypass cathode penetration wiring 44c. Each of the plurality of anode penetrating wires 44 is made of Ag, Ta, or solder, and in this embodiment, it is made of Ag. As shown in FIG. 2, the full-thickness anode penetrating wiring 44a penetrates the base material 3 from the front surface 31 to the back surface 32 in the thickness direction. As can be understood from FIGS. 4 and 6, the plurality of full-thickness anode through wirings 44a overlap both the plurality of anode pads 41a and the anode mounting electrodes 43a in the thickness direction of the base material 3. That is, the end face of each full-thickness anode penetrating wiring 44a on the front surface 31 side is covered with the circular portion of the anode pad 41a, and the end face on the back surface 32 side is covered with the anode mounting electrode 43a.

The plurality of plating anode penetrating wirings 44b penetrate the base material 3 in the same region as the full-thickness anode penetrating wirings 44a in the thickness direction. As can be understood from FIGS. 4 and 6, the plurality of anode through-anode wirings 44b for plating overlap both the anode-plated wiring 41e and the anode mounting electrode 43a in the thickness direction of the base material 3. That is, the end face of each plating anode penetrating wiring 44b on the front surface 31 side is covered with the anode plating wiring 41e, and the end face on the back surface 32 side is covered with the anode mounting electrode 43a.

The bypass cathode penetration wiring 44c penetrates the base material 3 from the front surface 31 to the back surface 32 in the thickness direction in the same manner as the full-thickness anode penetration wiring 44a. As can be understood from FIGS. 4 and 6, the bypass cathode penetrating wiring 44c overlaps both the bypass cathode pad 41c and the anode mounting electrode 43a in the thickness direction of the base material 3. That is, the end surface of the bypass cathode penetrating wiring 44c on the front surface 31 side is covered with the bypass cathode pad 41c, and the end surface on the back surface 32 side is covered with the anode mounting electrode 43a.

The plurality of cathode penetrating wiring 45 includes a plurality of front surface side cathode penetrating wiring 45a, a plurality of back surface side cathode penetrating wiring 45b, a plurality of plating cathode penetrating wiring 45c, and a bypass anode penetrating wiring 45d. Consists of Ag. As shown in FIG. 2, the surface-side cathode penetrating wiring 45a penetrates the portion of the base material 3 from the surface 31 to the intermediate layer 42 in the thickness direction thereof. As can be understood from FIGS. 4 and 5, the plurality of surface-side cathode penetrating wirings 45a overlap with the plurality of cathode pads 41b and the cathode relay wiring 42a in the thickness direction of the base material 3. That is, in the plurality of surface-side cathode penetrating wirings 45a, the end faces on the surface 31 side are covered with the plurality of cathode pads 41b, and the end faces on the intermediate layer 42 side are covered with the cathode relay wiring 42a.

The plurality of back surface side cathode penetrating wirings 45b penetrate the portion of the base material 3 from the intermediate layer 42 to the back surface 32 in the thickness direction thereof. As can be understood from FIGS. 5 and 6, the plurality of backside cathode penetrating wirings 45b overlap the cathode relay wirings 42a and the cathode mounting electrodes 43b in the thickness direction of the base material 3. That is, the end faces of the plurality of back surface side cathode penetrating wirings 45b on the intermediate layer 42 side are covered with the cathode relay wiring 42a, and the end faces on the back surface 32 side are covered with the cathode mounting electrodes 43b. The plurality of front side cathode penetrating wirings 45a and the plurality of back surface side cathode penetrating wirings 45b are electrically connected to each other via the cathode relay wiring 42a of the intermediate layer 42.

The plurality of plating cathode penetrating wirings 45c penetrate the base material 3 in the same region as the full-thickness anode penetrating wiring 44a in the thickness direction. As can be understood from FIGS. 4 and 6, the plurality of cathode penetrating wirings 45c for plating overlap both the cathode plating wiring 41f and the cathode mounting electrode 43b in the thickness direction of the base material 3. That is, in each plating cathode penetrating wiring 45c, the end surface on the front surface 31 side is covered with the cathode plating wiring 41f, and the end surface on the back surface 32 side is covered with the cathode mounting electrode 43b.

The bypass anode penetrating wiring 45d penetrates the base material 3 from the surface 31 to the intermediate layer 42 in the same manner as the surface side cathode penetrating wiring 45a. As can be understood from FIGS. 4 and 5, the bypass anode penetrating wiring 45d overlaps both the bypass anode pad 41d and the cathode relay wiring 42a in the thickness direction of the base material 3. That is, the end surface of the bypass anode penetrating wiring 45d on the surface 31 side is covered with the bypass anode pad 41d, and the end surface on the intermediate layer 42 side is covered with the cathode relay wiring 42a.

Each of the plurality of LED chips 5 serving as the light source of the semiconductor light emitting device A1 is configured as follows. First, for example, an n-type semiconductor layer 5b made of a GaN-based semiconductor is laminated on a substrate 5a made of sapphire. Further, the active layer 5c is laminated on the n-type semiconductor layer 5b. The active layer 5c has, for example, a multiple quantum well structure in which a plurality of layers made of GaN-based semiconductors are laminated. The p-type semiconductor layer 5d is laminated on the active layer 5c, and is made of, for example, a GaN-based semiconductor. The anode electrode 5e is laminated on the p-type semiconductor layer 5d, and is made of a metal such as Al, Au, or Ag. The cathode electrode 5f is laminated on the n-type semiconductor layer 5b exposed by removing the p-type semiconductor layer 5d and the active layer 5c by etching, and is made of a metal such as Al, Au, or Ag.

The individual LED chips 5 are mounted on the anode pad 41a and the cathode pad 41b in a so-called flip chip mounting form in which the LED chips 5 are turned upside down after being manufactured. Specifically, the anode electrode 5e is connected to the anode pad 41a via the junction 51, and the cathode electrode 5f is connected to the cathode pad 41b via the junction 51. For example, blue light is emitted from the LED chip 5 having such a configuration.

The Zener diode 6 is a functional element for avoiding an excessive reverse voltage being applied to the LED chip 5. In the present embodiment, the Zener diode 6 is die-bonded to the bypass cathode pad 41c and is die-bonded to the bypass cathode pad 41c. It is conducting. Further, the Zener diode 6 and the bypass anode pad 41d are connected by a wire 61. Instead of the Zener diode 6, a varistor element or an ESD (Electro Static Discharge) protection element may be used as a functional element for avoiding the application of a reverse voltage.

The sealing resin 7 fills the accommodating recess 33 of the case 2 and covers a plurality of LED chips 5. The sealing resin 7 is made of a transparent epoxy resin or a silicone resin mixed with a fluorescent material. This fluorescent material emits, for example, yellow light when excited by blue light from the LED chip 5. By mixing the yellow light and the blue light, white light is emitted from the semiconductor light emitting device A1.

Next, the operation of the semiconductor light emitting device A1 will be described.

According to the present embodiment, as shown in FIGS. 2 and 3, the substrate 5a is not interposed between the active layer 5c and the case 2. Compared with the substrate 5a, the p-type semiconductor layer 5d is extremely thin, and the anode electrode 5e is made of a metal having high thermal conductivity. Therefore, the heat generated when the LED chip 5 is turned on is easily transferred to the case 2. Therefore, it is possible to promote heat dissipation from the LED chip 5, and it is possible to increase the luminous efficiency of the LED chip 5.

The anode pad 41a is connected to the anode mounting electrode 43a via the full-thickness anode through wiring 44a. Therefore, the heat from the LED chip 5 is transferred to the anode mounting electrode 43a and further to, for example, the circuit board on which the semiconductor light emitting device A1 is mounted, through the full-thickness anode penetrating wiring 44a. This is suitable for promoting heat dissipation of the LED chip 5 and increasing the luminous efficiency of the LED chip 5.

Further, the cathode pad 41b is connected to the cathode mounting electrode 43b via the front surface side cathode penetration wiring 45a, the cathode relay wiring 42a, and the back surface side cathode penetration wiring 45b. Therefore, the heat from the LED chip 5 passes through the front surface side cathode through wiring 45a, the cathode relay wiring 42a, and the back surface side cathode through wiring 45b to the cathode mounting electrode 43b, and further to the circuit board on which the semiconductor light emitting device A1 is mounted, for example. Is told. This is suitable for promoting heat dissipation of the LED chip 5 and increasing the luminous efficiency of the LED chip 5.

The plurality of anode through wires 44 and the plurality of cathode through wires 45 are made of Ag. This is advantageous for promoting heat dissipation from the LED chip 5. Further, in the plurality of anode penetrating wirings 44 and the plurality of cathode penetrating wirings 45, the end faces on the front surface 31 side and the back surface 32 side are covered with the front surface layer 41 and the back surface layer 43. Of the front surface layer 41 and the back surface layer 43, at least a portion covering these end faces is formed by Au. This makes it possible to appropriately protect the plurality of anode through wiring 44 and the plurality of cathode through wiring 45 made of Ag, which are relatively easily denatured.

The base material 3 is made of a ceramic such as alumina, and has a thermal expansion rate relatively similar to that of, for example, a GaN-based semiconductor which is a material of the LED chip 5. Therefore, it is unlikely that a thermal expansion difference will occur between the LED chip 5 and the case 2 when the LED chip 5 is mounted on the case 2 or when the LED chip 5 emits light. This makes it possible to prevent the LED chip 5 from peeling off from the case 2.

The bypass cathode pad 41c is connected to the anode mounting electrode 43a via the bypass cathode through wiring 44c. This is suitable for smoothly passing a temporary large current in order to avoid applying an excessive reverse voltage to the LED chip 5.

A second embodiment of the present invention will be described with reference to FIGS. 7 to 9.

The semiconductor light emitting device A2 shown in the figure is mainly different from the configuration of the semiconductor light emitting device A1 in that the filling portion 8 of FIG. 9 is provided. Specifically, it is as follows.

Although omitted in the description of the semiconductor light emitting device A1, in reality, the anode penetrating wiring 44 and the cathode penetrating wiring 45 often have recesses formed on the back surface 32 side of the base material 3. Such recesses are formed when the base material 3 is fired. FIG. 9 shows a recess 44h formed in the full-thickness anode penetrating wiring 44a of the anode penetrating wiring 44. In the present embodiment, as shown in FIGS. 7 and 8, a plurality of LED chips 5 are arranged at positions overlapping the full-thickness anode penetrating wiring 44a.

In the present embodiment, three full-thickness anode penetrating wirings 44a are formed at positions overlapping with one LED chip 5, but the number of full-thickness anode penetrating wirings 44a overlapping with one LED chip 5 is three. It is not limited to this, and may be one, two, or four or more. When the number of full-thickness anode through wires 44a is large, the heat from the LED chip 5 can be transferred to the anode mounting electrode 43a more efficiently. This is preferable from the viewpoint of improving the heat dissipation of the semiconductor light emitting device A2. Further, the large number of full-thickness anode through wires 44a is suitable for reducing the electrical resistance between the surface layer 41 (anode pad 41a) and the anode mounting electrode 43a.

The surface defining the recess 44h is covered with the surface layer 41. The surface layer 41 has a substantially uniform thickness throughout. Therefore, the recess 41h is also formed in the surface layer 41. The recess 41h shown in FIG. 9 is formed in the anode pad 41a of the surface layer 41. The recess 41h is recessed on the back surface 32 side of the base material 3. The recess 41h overlaps the recess 44h in the thickness direction of the base material 3. Therefore, in FIG. 9, the recess 41h is located directly above the recess 44h. Although not particularly shown, in the present embodiment, the surface layer 41 has a structure in which a layer made of Ni and a layer made of Au are laminated. The layer made of Ni is interposed between the layer made of Au and the base material 3.

The filling portion 8 is filled in the recess 41h. The filling portion 8 is in contact with the surface layer 41 and the joining portion 51. The filling portion 8 may be made of a conductive material or an insulating material. In this embodiment, the filling portion 8 is made of a conductive material. Examples of the conductive material constituting the filling portion 8 include an alloy of Au and Sn. The filling portion 8 is formed before the LED chip 5 is arranged on the surface layer 41. The filling portion 8 is formed, for example, by applying a paste to the recess 41h.

Also in this embodiment, the joint portion 51 is interposed between any one of the plurality of LED chips 5 and the surface layer 41. The joining portion 51 is for joining each LED chip 5 to the surface layer 41. The joint portion 51 may be made of a conductive material or an insulating material. In this embodiment, the joint 51 is made of a conductive material. Examples of the conductive material constituting the joint portion 51 include an alloy of Au and Sn. Unlike the present embodiment, the conductive material constituting the joint portion 51 may be silver paste or solder.

According to the semiconductor light emitting device A2, by forming the filling portion 8 in the recess 41h before arranging the LED chip 5 on the base material 3, the surface of the portion where the LED chip 5 should be arranged can be made flatter. can. Therefore, even if the LED chip 5 is arranged at a position where the base material 3 overlaps with the full-thickness anode penetrating wiring 44a in the thickness direction view, the LED chip 5 does not fit into the recess 41h. It is possible to prevent the posture of the LED chip 5 from collapsing. Therefore, it is possible to improve the manufacturing yield of the semiconductor light emitting device A2.

Note that FIG. 9 shows an example in which the recess 44h is formed in the anode penetrating wiring 44 and the recess 41h is formed in the anode pad 41a of the surface layer 41. Unlike that shown in FIG. 9, as shown in FIG. 10, a recess 45h is formed in the cathode through wiring 45, and a recess 41h is formed at a position where the recess 45h and the base material 3 overlap each other in the thickness direction. It is also possible that it is. In this case, the filling portion 8 may be formed in the recess 41h, and the LED chip may be arranged at a position where the cathode through wiring 45 and the base material 3 overlap each other in the thickness direction.

11 to 13 show a semiconductor light emitting device based on the third embodiment of the present invention. The semiconductor light emitting device 101 of the present embodiment includes a case 200, a plurality of LED chips 500, a Zener diode 600, a reflective resin 710, and a sealing resin 700. In FIG. 11, the sealing resin 700 is omitted for convenience of understanding.

The case 200 serves as a base for the semiconductor light emitting device 101, and has a base material 300 and a wiring 400. The size of the case 200 is such that the plan view dimension is about 5 to 10 mm square and the thickness is about 1.0 mm.

The base material 300 has a thick plate shape having a substantially rectangular shape in a plan view, and is made of a ceramic such as alumina. In the present embodiment, as this ceramic, a material called a low-temperature co-fired ceramic, which has a relatively low firing temperature of about 900 ° C., is used. This low-temperature co-fired ceramic can be fired at the same time as the metal that is the material of the wiring 400 due to the low firing temperature.

A housing recess 303 is formed in the center of the base material 300. The accommodating recess 303 accommodates a plurality of LED chips 500, and has a rectangular shape in a plan view. Corner recesses 304 are formed at the four corners of the base material 300. The corner recess 304 is a part of a through hole provided for appropriately dividing the ceramic material in the method of manufacturing the semiconductor light emitting device 101, and is a groove having a quarter-circular cross section. The base material 300 has a front surface 301 and a back surface 302. The inner wall surface 305 of the accommodating recess 303 is annular and perpendicular to the surface 301. In the present embodiment, the depth of the accommodating recess 303 is set to, for example, about 0.6 mm.

The base material 300 has a damming recess 306. The damming recess 306 is recessed from the surface 301 and is in contact with the inner wall surface 305. In the present embodiment, the damming recess 306 has a rectangular shape.

The wiring 400 is used as a path for supplying DC power to a plurality of LED chips 500, and has a front surface layer 410, an intermediate layer 420, a back surface layer 430, a plurality of anode penetrating wirings 440, and a plurality of cathodes. It has a through wiring 450.

The surface layer 410 includes a plurality of anode pads 411, a plurality of cathode pads 412, a bypass cathode pad 413, and a bypass anode pad 414. The surface layer 410 is made of, for example, Au.

The plurality of anode pads 411 and the plurality of cathode pads 412 are for mounting the LED chip 500. The anode pad 411 and the cathode pad 412 are arranged as a pair adjacent to each other. In the present embodiment, five pairs of the anode pad 411 and the cathode pad 412 are formed. Each anode pad 411 has three parallel branched portions, a strip-shaped portion connected at right angles to these branched portions, and a circular portion connected to the strip-shaped portion. The cathode pad 412 has a strip-shaped portion and a circular portion connected to the strip-shaped portion.

The bypass cathode pad 413 and the bypass anode pad 414 are for mounting a bypass function element for avoiding an excessive reverse voltage from being applied to the LED chip 500, and in the present embodiment, the bypass function element is used. As a Zener diode 600 is mounted. The bypass cathode pad 413 has a circular shape, and the bypass anode pad 414 has a rectangular portion and a circular portion connected to the rectangular portion.

The intermediate layer 420 is formed substantially at the center of the front surface 301 and the back surface 302 (about 0.2 mm in depth from the surface 301) in the thickness direction of the base material 300. The intermediate layer 420 includes the cathode relay wiring 421.

As shown in FIG. 12, the back surface layer 430 is formed on the back surface 302 of the base material 300, and has an anode mounting electrode 431 and a cathode mounting electrode 432. The anode mounting electrode 431 and the cathode mounting electrode 432 are used for surface mounting the semiconductor light emitting device 101 on, for example, a circuit board. In the present embodiment, the anode mounting electrode 431 and the cathode mounting electrode 432 are made of Au. The anode mounting electrode 431 has a substantially rectangular shape and covers a region of about 2/3 on the right side of the back surface 302 of the base material 300 in the drawing. The cathode mounting electrode 432 has a long rectangular shape and covers a region of about 1/4 on the left side of the drawing of the back surface 302.

The plurality of anode penetration wiring 440 includes a plurality of full-thickness anode penetration wiring 441 and a bypass cathode penetration wiring 443. Each of the plurality of anode penetrating wires 440 is made of Ag, Ta, or solder, and in this embodiment, it is made of Ag. As shown in FIG. 13, the full-thickness anode penetration wiring 441 penetrates the base material 300 from the front surface 301 to the back surface 302 in the thickness direction. The end face of each full-thickness anode penetrating wiring 441 on the front surface 301 side is covered with the circular portion of the anode pad 411, and the end face on the back surface 302 side is covered with the anode mounting electrode 431.

The bypass cathode penetration wiring 443 penetrates the base material 300 from the front surface 301 to the back surface 302 in the thickness direction in the same manner as the full-thickness anode penetration wiring 441. The end face of the bypass cathode penetrating wiring 443 on the front surface 301 side is covered with the bypass cathode pad 413, and the end face on the back surface 302 side is covered with the anode mounting electrode 431.

The plurality of cathode penetrating wiring 450 includes a plurality of front side cathode penetrating wirings 451 and a plurality of back surface side cathode penetrating wirings (not shown), and bypass anode penetrating wirings (not shown). Become. The surface-side cathode penetration wiring 451 penetrates the portion of the base material 300 from the surface 301 to the intermediate layer 420 in the thickness direction thereof. The end surface of the surface-side cathode penetrating wiring 451 on the surface 301 side is covered with a plurality of cathode pads 412, and the end surface on the intermediate layer 420 side is covered with a cathode relay wiring 421. The back surface side cathode penetration wiring penetrates the portion of the base material 300 from the intermediate layer 420 to the back surface 302 in the thickness direction thereof. The end surface of the back surface side cathode penetrating wiring on the intermediate layer 420 side is covered with the cathode relay wiring 421, and the end surface on the back surface 302 side is covered with the cathode mounting electrode 432. The plurality of front side cathode penetrating wirings 451 and the plurality of back surface side cathode penetrating wirings are electrically connected to each other via the cathode relay wiring 421 of the intermediate layer 420. The bypass anode penetrating wiring penetrates the base material 300 from the surface 301 to the intermediate layer 420 in the same manner as the surface side cathode penetrating wiring 451. The end face of the bypass anode penetrating wiring on the surface 301 side is covered with the bypass anode pad 414, and the end face on the intermediate layer 420 side is covered with the cathode relay wiring 421.

Two test electrodes 460 are formed on the uppermost surface of the base material 300. These test electrodes 460 are conductive with the plurality of anode pads 411 and the plurality of cathode pads 412. In the manufacturing process of the semiconductor light emitting device 101, the lighting test of the LED chip 500 can be performed by bringing the test power probe into contact with the two test electrodes 460.

Each of the plurality of LED chips 500 serving as a light source of the semiconductor light emitting device 101 is configured as follows. First, as shown in FIG. 14, an n-type semiconductor layer 502 made of, for example, a GaN-based semiconductor is laminated on a substrate 501 made of, for example, sapphire. Further, the active layer 503 is laminated on the n-type semiconductor layer 502. The active layer 503 has, for example, a multiple quantum well structure in which a plurality of layers made of GaN-based semiconductors are laminated. The p-type semiconductor layer 504 is laminated on the active layer 503, for example, and is made of a GaN-based semiconductor. The anode electrode 505 is laminated on the p-type semiconductor layer 504 and is made of, for example, a metal such as Al, Au, or Ag. The cathode electrode 506 is laminated on the n-type semiconductor layer 502 exposed by removing the p-type semiconductor layer 504 and the active layer 503 by etching, and is made of a metal such as Al, Au, or Ag.

The individual LED chips 500 are mounted on the anode pad 411 and the cathode pad 412 in a so-called flip chip mounting form in which the LED chips 500 are turned upside down after being manufactured. Specifically, the anode electrode 505 is connected to the anode pad 411 via the junction 510, and the cathode electrode 506 is connected to the cathode pad 412 via the junction 510. For example, blue light is emitted from the LED chip 500 having such a configuration.

The Zener diode 600 is a bypass function element for avoiding an excessive reverse voltage being applied to the LED chip 500. In the present embodiment, the Zener diode 600 is die-bonded to the bypass cathode pad 413 and is bypass cathode pad 413. Is conducting to. Further, the Zener diode 600 and the bypass anode pad 414 are connected by a wire 610. The Zener diode 600, the bypass cathode pad 413, and the bypass anode pad 414 are formed in the damming recess 306. Instead of the Zener diode 600, a varistor element or an ESD (Electro Static Discharge) protection element may be used as a bypass function element for avoiding the application of a reverse voltage.

The reflective resin 710 is made of, for example, a material in which titanium oxide is mixed with a silicone resin, and exhibits a bright white color. As shown in FIGS. 11 and 13, the reflective resin 710 has an inner edge 712, an outer edge 713, and a reflective surface 711. The inner edge 712 surrounds them at positions separated from the plurality of LED chips 500. The outer edge 713 is in contact with the inner wall surface 305. The reflective surface 711 is a surface connecting the inner edge 712 and the outer edge 713, and is an inclined surface having a higher height from the surface 301 toward the outer edge 713 from the inner edge 712. The inner edge 712 is in contact with the surface 301. Further, the height a from the surface 301 to the outer edge 713 is higher than the height b from the surface 301 to the active layer 503 of the LED chip 500. The reflective resin 710 covers the Zener diode 600, the bypass cathode pad 413, the bypass anode pad 414, and the wire 610. A portion of the inner edge 712 coincides with a portion of the edge of the damming recess 306. The reflective resin 710 can be formed, for example, by adhering a resin material having an appropriate viscosity to the surface 301 and the damming recess 306. The shape of the reflective resin 710 described above is realized by the flow and surface tension of the resin material.

The sealing resin 700 fills the accommodating recess 303 of the case 200 and covers the plurality of LED chips 500 and the reflective resin 710. The sealing resin 700 is made of a transparent epoxy resin or a silicone resin mixed with a fluorescent material. This fluorescent material emits, for example, yellow light when excited by blue light from the LED chip 500. By mixing the yellow light and the blue light, white light is emitted from the semiconductor light emitting device 101.

Next, the operation of the semiconductor light emitting device 101 will be described.

According to the present embodiment, as shown in FIG. 13, a reflecting surface 711 exists between the LED chip 500 and the inner wall surface 305. The reflective surface 711 is inclined from the inner edge 712 on the LED chip 500 side toward the outer edge 713 in contact with the inner wall surface 305 so that the height from the surface 301 gradually increases. As a result, the light emitted laterally from the LED chip 500 can be appropriately directed upward in the figure. Further, the reflective surface 711 is composed of a reflective resin 710 provided in the accommodating recess 303. Therefore, it is not necessary to increase the size of the case 200 by providing the reflective resin 710. Therefore, it is possible to increase the brightness and reduce the size of the semiconductor light emitting device 101.

The reflective resin 710 is made of a material having a higher reflectance than the ceramic which is the material of the base material 300. This makes it possible to suppress attenuation when the light from the LED chip 500 is reflected by the reflecting surface 711. Using a white resin as the material of the reflective resin 710 is suitable for suppressing attenuation due to reflection.

The active layer 503 is a light emitting portion in the LED chip 500. As shown in FIGS. 13 and 15, the height a from the surface 301 to the outer edge 713 is higher than the height b from the surface 301 to the active layer 503. Therefore, the reflective surface 711 is located in front of the light emitted laterally from the active layer 503. Therefore, the light emitted laterally from the active layer 503 can be efficiently reflected upward.

The fact that the inner wall surface 305 is perpendicular to the surface 301 is advantageous for miniaturization of the case 200.

Generally, the Zener diode 600 absorbs more light than the reflective resin 710 made of white resin. By covering the Zener diode 600 with the reflective resin 710, it is possible to prevent the light from the LED chip 500 from being absorbed by the Zener diode 600, and it is possible to further promote the increase in brightness of the semiconductor light emitting device 101. By arranging the Zener diode 600 in the damming recess 306, when a liquid or paste-like resin material is adhered to the damming recess 306 when the reflective resin 710 is formed, the Zener diode 600 is appropriately covered by this resin material. , The inner edge 712 can be prevented from exceeding the edge of the damming recess 306 by surface tension. This is suitable for preventing the reflective resin 710 from adhering to, for example, the active layer 503 of the LED chip 500 while increasing the brightness.

15 to 22 show other embodiments of the present invention. In these figures, the same or similar elements as those in the embodiment are designated by the same reference numerals as those in the embodiment.

15 and 16 show a semiconductor light emitting device based on the fourth embodiment of the present invention. The semiconductor light emitting device 102 of the present embodiment has a different configuration of the damming recess 306 from the above-described embodiment.

In this embodiment, the damming recess 306 has a surrounding portion 307 and a protruding portion 308. The surrounding portion 307 is an annular shape along the inner wall surface 305 and surrounds a plurality of LED chips 500. The protruding portion 308 protrudes from the surrounding portion 307 between the LED chips 500 adjacent to each other. One LED chip 500 is arranged in a region closer to the center of the case 200 than the tip of the protrusion 308.

In the present embodiment, all the inner edges 712 of the reflective resin 710 coincide with the edge of the damming recess 306. That is, the reflective resin 710 is provided at a position retracted from the surface 301.

Even with such an embodiment, it is possible to increase the brightness and reduce the size of the semiconductor light emitting device 102. Further, by providing the surrounding portion 307 in the damming recess 306, the inner edge 712 of the reflective resin 710 is provided at a position closer to the LED chip 500, and when the reflective resin 710 is formed, the resin material is erroneously attached to the LED chip 500. Can be prevented from adhering. By providing the protruding portion 308, the reflective resin 710 can be appropriately formed in the space sandwiched between the adjacent LED chips 500. The portion of the reflecting surface 711 extended by the protruding portion 308 can efficiently reflect the light from the LED chip 500 located at the center.

17 and 18 show a semiconductor light emitting device based on the fifth embodiment of the present invention. The semiconductor light emitting device 103 of the present embodiment mainly differs from the above-described embodiment in the configuration of the LED chip 500. In the present embodiment, as shown in FIG. 19, in the LED chip 500, the anode electrode 505 and the cathode electrode 506 are formed on the upper surface side. A wire 550 is connected to these anode electrodes 505 and cathode electrodes 506. Such an LED chip 500 is a so-called two-wire type.

As shown in FIG. 17, the accommodating recess 303 has a circular shape in a plan view. A plurality of die bonding pads 417 are formed on the surface 301. The LED chip 500 is die-bonded to the die-bonding pad 417. A plurality of anode pads 411 and a plurality of cathode pads 412 are arranged so as to sandwich the plurality of die bonding pads 417. A wire 550 is connected to each anode pad 411 and each cathode pad 412.

The reflective resin 710 covers the plurality of anode pads 411 and the plurality of cathode pads 412. Further, in the wire 550, the portions on the side of the plurality of anode pads 411 and the plurality of cathode pads 412 are covered with the reflective resin 710. The inner edge 712 surrounds them at positions separated from the plurality of LED chips 500 and the plurality of die bonding pads 417. The Zener diode 600 and the wire 610 are also covered with the reflective resin 710.

Even with such an embodiment, it is possible to increase the brightness and reduce the size of the semiconductor light emitting device 103. Further, the anode pad 411 and the cathode pad 412 are arranged outside the LED chip 500. Therefore, each of the wires 550 connected to the LED chip 500, which is a two-wire type, extends outward with respect to the LED chip 500. The portion of the wire 550 bonded to the anode pad 411 and the cathode pad 412 and the portion in the vicinity thereof serve to attract the resin material by surface tension when forming the reflective resin 710. As a result, the resin material can be retained outside the LED chip 500.

20 and 21 show a semiconductor light emitting device based on the sixth embodiment of the present invention. The semiconductor light emitting device 104 of the present embodiment mainly differs from the above-described embodiment in the overall configuration of the case 200 and the structure of the LED chip 500.

In the present embodiment, as shown in FIG. 22, the LED chip 500 includes a submount substrate 507 made of, for example, Si, and a substrate 501, for example, an n-type semiconductor layer 502 made of GaN, an active layer 503, and a p-type semiconductor layer 504. It has a structure having a semiconductor layer in which silicon is laminated, and emits blue light, for example. In the semiconductor layer, an anode electrode 505 and a cathode electrode 506 are formed on the submount substrate 507 side. These anode electrodes 505 and cathode electrodes 506 are joined to a wiring pattern (not shown) formed on the submount substrate 507 by a conductive paste 511. Two electrodes (not shown) are formed on the submount substrate 507. One end of each of the two wires 550 is bonded to these electrodes. As shown in FIGS. 20 and 21, the other end of one wire 550 is bonded to the anode pad 411 and the other end of the other wire 550 is bonded to the cathode pad 412.

The base material 300 has a long rectangular shape in a plan view, and the accommodating recess 303 also has a long rectangular shape. In this embodiment, the inner wall surface 305 is tilted with respect to the direction perpendicular to the surface 301. The reflective resin 710 covers a region of the surface 301 other than the portion to which the submount substrate 507 of the LED chip 500 is joined. The inner edge 712 of the reflective resin 710 is in contact with the submount substrate 507. The anode pad 411 has a plan view dimension that occupies most of the accommodating recess 303. The plurality of LED chips 500 are die-bonded to the anode pad 411. The Zener diode 600 and the wire 610 are covered with the reflective resin 710. The submount substrate 507 may be configured such that the bypass function element according to the present invention is incorporated therein.

Anode side wiring 461 and cathode side wiring 462 are formed on the side surface of the base material 300. The anode side wiring 461 is connected to the anode pad 411 and the anode mounting electrode 431. The cathode side wiring 462 is connected to the cathode pad 412 and the cathode mounting electrode 432.

Even with such an embodiment, it is possible to increase the brightness and reduce the size of the semiconductor light emitting device 104. By covering most of the inside of the accommodating recess 303 with the reflective resin 710, it is possible to further promote high brightness. The submount substrate 507 is a portion that is surely raised from the surface 301. As a result, when the reflective resin 710 is formed, it is possible to prevent the resin material from protruding into the active layer 503. Since the submount substrate 507 is not a light emitting portion, it does not hinder the increase in brightness of the semiconductor light emitting device 104.

As a modification of the semiconductor light emitting device 104, the wiring 400 may be formed by, for example, a plate-shaped lead made of Cu, Fe, or an alloy thereof. Specifically, a lead having a portion corresponding to the cathode pad 412, the cathode side wiring 462, and the cathode mounting electrode 432, and a lead having a portion corresponding to the anode pad 411, the anode side wiring 461, and the anode mounting electrode 431 are provided. Use. Further, in this modification, it is preferable that the portion of the base material 300 that constitutes the inner wall surface 305 is formed of a thermosetting resin or a thermoplastic resin.

A seventh embodiment of the present invention will be described with reference to FIGS. 23 to 25.

The semiconductor light emitting device 105 shown in the figure is mainly different from the configuration of the semiconductor light emitting device 101 in that the filling portion 800 of FIG. 25 is provided. Specifically, it is as follows.

Although omitted in the description of the semiconductor light emitting device 101, in reality, the anode penetrating wiring 440 and the cathode penetrating wiring 450 often have recesses formed on the back surface 302 side of the base material 300. Such recesses are formed when the base material 300 is fired. FIG. 25 shows a recess 449 formed in the full-thickness anode penetration wiring 441 of the anode penetration wiring 440. In the present embodiment, as shown in FIGS. 23 and 24, a plurality of LED chips 500 are arranged at positions overlapping the full-thickness anode penetrating wiring 441.

In the present embodiment, three full-thickness anode penetrating wirings 441 are formed at positions overlapping with one LED chip 500, but the number of full-thickness anode penetrating wirings 441 overlapping with one LED chip 500 is three. It is not limited to this, and may be one, two, or four or more. When the number of full-thickness anode through wires 441 is large, the heat from the LED chip 500 can be transferred to the anode mounting electrode 431 more efficiently. This is preferable from the viewpoint of improving the heat dissipation of the semiconductor light emitting device 105. Further, the large number of full-thickness anode through wires 441 is suitable for reducing the electrical resistance between the surface layer 410 (anode pad 411) and the anode mounting electrode 431.

The surface defining the recess 449 is covered with a surface layer 410. The surface layer 410 has a substantially uniform thickness throughout. Therefore, the concave portion 419 is also formed in the surface layer 410. The recess 419 shown in FIG. 25 is formed in the anode pad 411 of the surface layer 410. The recess 419 is recessed on the back surface 302 side of the base material 300. The recess 419 overlaps the recess 449 in the thickness direction of the base material 300. Therefore, in FIG. 25, the recess 419 is located directly above the recess 449. Although not particularly shown, in the present embodiment, the surface layer 410 has a structure in which a layer made of Ni and a layer made of Au are laminated. The layer made of Ni is interposed between the layer made of Au and the base material 300.

The filling portion 800 is filled in the recess 419. The filling portion 800 is in contact with the surface layer 410 and the joining portion 510. The filling portion 800 may be made of a conductive material or an insulating material. In this embodiment, the filling portion 800 is made of a conductive material. Examples of the conductive material constituting the filling portion 800 include an alloy of Au and Sn. The filling portion 800 is formed before the LED chip 500 is placed on the surface layer 410 via the joining portion 510. The filling portion 800 is formed, for example, by applying a paste to the recess 419.

Also in this embodiment, the joint portion 510 is interposed between any one of the plurality of LED chips 500 and the surface layer 410. The joining portion 510 is for joining each LED chip 500 to the surface layer 410. The joint portion 510 may be made of a conductive material or an insulating material. In this embodiment, the joint 510 is made of a conductive material. Examples of the conductive material constituting the joint portion 510 include an alloy of Au and Sn. Unlike the present embodiment, the conductive material constituting the joint portion 510 may be silver paste or solder.

According to the semiconductor light emitting device 105, by forming the filling portion 800 in the recess 419 before arranging the LED chip 500 in the base material 300, the surface of the portion where the LED chip 500 should be arranged can be made flatter. can. Therefore, even if the LED chip 500 is arranged at a position where the base material 300 overlaps with the full-thickness anode penetrating wiring 441 in the thickness direction view, the LED chip 500 does not fit into the recess 419. Therefore, when arranging the LED chip 500, It is possible to prevent the posture of the LED chip 500 from collapsing. Therefore, it is possible to improve the manufacturing yield of the semiconductor light emitting device 105.

Note that FIG. 25 shows an example in which the recess 449 is formed in the anode penetrating wiring 440 and the recess 419 is formed in the anode pad 411 of the surface layer 410. Unlike that shown in FIG. 25, as shown in FIG. 26, a recess 459 is formed in the cathode through wiring 450, and a recess 419 is formed at a position where the recess 459 and the base material 300 overlap in the thickness direction. It is also possible that it is. In this case, the filling portion 800 may be formed in the recess 419, and the LED chip 500 may be arranged at a position where the cathode through wiring 450 and the base material 300 overlap each other in the thickness direction.

Further, the semiconductor light emitting device 102 or 103 may adopt the configuration of the semiconductor light emitting device 105.

The semiconductor light emitting device according to the present invention is not limited to the above-described embodiment. The specific configuration of each part of the semiconductor light emitting device according to the present invention can be freely redesigned.

The number of the plurality of LED chips is not limited to 5, and may be any number.

A1, A2: Semiconductor light emitting device 2: Case 3: Base material 31: Front surface 32: Back surface 33: Containment recess 34: Corner recess 4: Wiring 41: Surface layer 41a: Anode pad 41b: Cathode pad 41c: Bypass cathode pad 41d: Bypass anode pad 41e: Anode plated wiring 41f: Cathode plated wiring 41h: Recess (second recess)
42: Intermediate layer 42a: Cathode relay wiring 43: Back surface layer 43a: Anode mounting electrode 43b: Cathode mounting electrode 44: Anode penetrating wiring 44a: Full-thickness anode penetrating wiring 44b: Anode penetrating wiring for plating 44c: Bypass cathode penetrating wiring 44h: Recess (first recess)
45: Cathode penetrating wiring 45a: Cathode penetrating wiring on the front side 45b: Cathode penetrating wiring on the back side 45c: Cathode penetrating wiring for plating 45d: Bypass anode penetrating wiring 45h: Recess (first recess)
5: LED chip 5a: Substrate 5b: n-type semiconductor layer 5c: Active layer 5d: p-type semiconductor layer 5e: Anode electrode 5f: Cathode electrode 51: Joint part 6: Zener diode 61: Wire 7: Encapsulating resin 8: Filling Part 9: Semiconductor light emitting device 91: Base material 92: Lead 93: LED chip 94: Semiconductor layer 95: Submount substrate 96: Wire 97: Encapsulating resin a, b: Height 101, 102, 103, 104, 105: Semiconductor light emitting device 200: Case 300: Base material 301: Front surface 302: Back surface 303: Containment recess 304: Corner recess 305: Inner wall surface 306: Dam stop recess 307: Surrounding part 308: Projection part 400: Wiring 410: Surface layer 411: Anode Pad 412: Cathode pad 413: Bypass cathode pad 414: Bypass anode pad 417: Die bonding pad 419: Recess (second recess)
420: Intermediate layer 421: Cathode relay wiring 430: Back surface layer 431: Anode mounting electrode 432: Anode mounting electrode 440: Anode penetrating wiring 441: Full thickness anode penetrating wiring 443: Bypass cathode penetrating wiring 449: Recess (first recess)
450: Cathode penetration wiring 451: Surface side cathode penetration wiring 459: Recess (first recess)
460: Test electrode 461: Anode side wiring 462: Anode side wiring 500: LED chip 501: Substrate 502: n-type semiconductor layer 503: Active layer 504: p-type semiconductor layer 505: Anode electrode 506: Cathode electrode 507: Submount substrate 510: Joint 511: Conductive paste 550: Wire 600: Zener diode (bypass function element)
610: Wire 700: Encapsulating resin 710: Reflective resin 711: Reflective surface 712: Inner edge 713: Outer edge 800: Filling part

Claims (11)

A substrate having a surface and a bottom surface facing opposite sides in the thickness direction, and a side surface connected to the surface surface and the bottom surface.
A plurality of first-plated conductive portions formed on the surface thereof,
A plurality of second-plated conductive portions formed on the surface thereof,
A first intermediate conductive portion formed inside the substrate and connected to the plurality of first plated conductive portions, and a first intermediate conductive portion.
A second intermediate conductive portion formed inside the substrate and connected to the plurality of second plated conductive portions,
A third-plated conductive portion formed on the bottom surface and conducting to the plurality of first-plated conductive portions via the first intermediate conductive portion,
A fourth-plated conductive portion formed on the bottom surface and conducting to the plurality of second-plated conductive portions via the second intermediate conductive portion,
It has a back surface facing the front surface, an anode electrode and a cathode electrode formed on the back surface, and a plurality of LED chips mounted on the front surface.
The anode electrodes of the plurality of LED chips are individually conductively bonded to the plurality of first plated conductive portions.
The cathode electrodes of the plurality of LED chips are individually conductively bonded to the plurality of second plated conductive portions.
The first intermediate conductive portion and a part of the second intermediate conductive portion are formed along the parallel to the side surface.
The first-plated wiring formed on the surface and conducting to the third-plated conductive portion,
A second plated wiring formed on the surface and conducting to the fourth plated conductive portion is further provided.
The substrate has a first edge and a second edge extending in a first direction orthogonal to the thickness direction and forming a boundary between the surface and the side surface.
The first edge and the second edge are located apart from each other in the thickness direction and the second direction orthogonal to the first direction.
Each of the first-plated wiring and the second-plated wiring extends from the first edge to the second edge.
Seen in the thickness direction, the plurality of LED chips are sandwiched between the first plated wiring and the second plated wiring in the first direction.
The substrate has a frame portion protruding from the surface, and a recess defined by the surface and the frame portion and accommodating the plurality of LED chips.
The first-plated wiring and the second-plated wiring are interposed between the surface and the frame portion.
A semiconductor light emitting device in which the first-plated wiring and the second-plated wiring are located away from the recess when viewed in the thickness direction. Further, a first plating penetration wiring and a second plating penetration wiring formed inside the substrate are provided.
The first plating through wiring is connected to the first plating wiring and the third plating conductive portion.
The semiconductor light emitting device according to claim 1, wherein the second plating through wiring is connected to the second plating wiring and the fourth plating conductive portion. The semiconductor light emitting according to claim 2, wherein the first plating penetrating wiring and the second plating penetrating wiring are located apart from the first intermediate conductive portion and the second intermediate conductive portion when viewed in the thickness direction. Device. With more sealing resin,
The semiconductor light emitting device according to any one of claims 1 to 3, wherein the sealing resin is formed on the surface thereof, covers the plurality of LED chips, and transmits light emitted from the plurality of LED chips. Further provided with a reflective resin located between the surface and the sealing resin,
The semiconductor light emitting device according to claim 4, wherein the reflective resin is inclined so as to move away from the surface as the distance from the plurality of LED chips increases in the first direction. The semiconductor light emitting device according to claim 5, wherein the sealing resin bulges toward the surface. The sealing resin has a first portion that covers the plurality of LED chips and a second portion that covers the plurality of first plating conductive portions.
The semiconductor light emitting device according to any one of claims 4 to 6, wherein the thickness of the first part is different from the thickness of the second part. The semiconductor light emitting device according to any one of claims 1 to 7, wherein the first intermediate conductive portion and the second intermediate conductive portion are separated from each other by a predetermined distance. The semiconductor light emitting device according to any one of claims 1 to 8, wherein the third plated conductive portion and the fourth plated conductive portion are adjacent to each other. When viewed in the thickness direction, the first intermediate conductive portion is located away from the plurality of LED chips.
The semiconductor light emitting device according to any one of claims 1 to 9, wherein the second intermediate conductive portion is overlapped with the plurality of LED chips when viewed in the thickness direction. The semiconductor light emitting device according to any one of claims 1 to 10, further comprising a bypass function element mounted on the substrate and preventing a reverse overvoltage from being applied to the plurality of LED chips.

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