JP2021532587A - 正極くり抜き成型用の結晶シリコン系太陽電池スクリーン印刷版 - Google Patents
正極くり抜き成型用の結晶シリコン系太陽電池スクリーン印刷版 Download PDFInfo
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- 238000007650 screen-printing Methods 0.000 title claims abstract description 38
- 229910021419 crystalline silicon Inorganic materials 0.000 title claims abstract description 27
- 238000000465 moulding Methods 0.000 title claims description 14
- 230000002265 prevention Effects 0.000 claims abstract description 62
- 239000000839 emulsion Substances 0.000 claims abstract description 27
- 238000004519 manufacturing process Methods 0.000 claims abstract description 16
- 230000000903 blocking effect Effects 0.000 claims abstract description 14
- 230000007423 decrease Effects 0.000 claims description 6
- 238000007639 printing Methods 0.000 abstract description 24
- 230000000694 effects Effects 0.000 abstract description 11
- 230000020169 heat generation Effects 0.000 abstract description 5
- 238000010586 diagram Methods 0.000 abstract 1
- 230000004888 barrier function Effects 0.000 description 6
- 239000000969 carrier Substances 0.000 description 3
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41F—PRINTING MACHINES OR PRESSES
- B41F15/00—Screen printers
- B41F15/14—Details
- B41F15/34—Screens, Frames; Holders therefor
- B41F15/36—Screens, Frames; Holders therefor flat
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41F—PRINTING MACHINES OR PRESSES
- B41F15/00—Screen printers
- B41F15/14—Details
- B41F15/34—Screens, Frames; Holders therefor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022433—Particular geometry of the grid contacts
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
- H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
- H01L31/0512—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module made of a particular material or composition of materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41N—PRINTING PLATES OR FOILS; MATERIALS FOR SURFACES USED IN PRINTING MACHINES FOR PRINTING, INKING, DAMPING, OR THE LIKE; PREPARING SUCH SURFACES FOR USE AND CONSERVING THEM
- B41N1/00—Printing plates or foils; Materials therefor
- B41N1/24—Stencils; Stencil materials; Carriers therefor
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
Description
Claims (10)
- 結晶シリコン系太陽電池を製造するためのスクリーン印刷版であって、
前記結晶シリコン系太陽電池の正極は正極バスバー(1)、正極細グリッド(2)及び破断防止グリッド構造(3)を含み、前記スクリーン印刷版は少なくとも前記正極細グリッド(2)と前記破断防止グリッド構造(3)とが一体的に印刷して成型されることに使用され、前記スクリーン印刷版(5)にはペーストの通過を遮断する遮断部が設けられ、前記遮断部は、前記正極を印刷するときに前記破断防止グリッド構造(3)の内の、前記遮断部に対応する位置箇所にくり抜き溝(4)を形成するように前記正極の前記破断防止グリッド構造(3)に対応し、前記遮断部は、前記くり抜き溝(4)が前記破断防止グリッド構造(3)における、前記正極バスバー(1)と前記正極細グリッド(2)との間の部分内に形成されるように位置決められる、
ことを特徴とする結晶シリコン系太陽電池を製造するためのスクリーン印刷版。 - 前記遮断部は感光乳剤(6)又は感光しない乳剤である、
ことを特徴とする請求項1に記載の結晶シリコン系太陽電池を製造するためのスクリーン印刷版。 - 前記スクリーン印刷版(5)は、前記破断防止グリッド構造(3)を形成するようにペーストを通過させる八角状の破断防止グリッド成型領域を含み、前記八角状は中央に位置する矩形、及び前記矩形の両側に位置し、かつ前記矩形を中心として対称的に設けられる2つの等脚台形を含み、前記矩形は前記正極バスバー(1)に跨り、その左右の両端が前記正極バスバー(1)の外まで延出し、延出した領域は矩形の延出される破断防止領域であり、前記等脚台形の両端は、それぞれ、前記延出される破断防止領域及び前記正極細グリッド(2)に接し、前記等脚台形は、その断面が前記正極バスバー(1)から前記正極細グリッド(2)に向かう方向に徐々に減少する先細りの領域であり、前記遮断部は前記等脚台形内に位置し、又は前記延出される破断防止領域及び前記等脚台形に跨る、
ことを特徴とする請求項1に記載の結晶シリコン系太陽電池を製造するためのスクリーン印刷版。 - 前記遮断部は前記正極細グリッド(2)の長手方向に沿って配置される、
ことを特徴とする請求項1に記載の結晶シリコン系太陽電池を製造するためのスクリーン印刷版。 - 前記遮断部は前記正極細グリッド(2)の長手方向に垂直な方向に沿って配置される、
ことを特徴とする請求項1に記載の結晶シリコン系太陽電池を製造するためのスクリーン印刷版。 - 前記遮断部の数は1つまたは複数であり、各破断防止グリッド構造(3)のそれぞれに1つまたは複数のくり抜き溝(4)が設けられる、
ことを特徴とする請求項1に記載の結晶シリコン系太陽電池を製造するためのスクリーン印刷版。 - 前記遮断部の形状は矩形又は円形である、
ことを特徴とする請求項1に記載の結晶シリコン系太陽電池を製造するためのスクリーン印刷版。 - 前記矩形の長さ及び幅は0.034〜0.084mmの範囲内で選択され、前記円形の直径は0.034〜0.084mmである、
ことを特徴とする請求項7に記載の結晶シリコン系太陽電池を製造するためのスクリーン印刷版。 - 前記遮断部の中心と前記正極バスバー(1)の辺縁との間の距離は0.033〜0.068mmである、
ことを特徴とする請求項1に記載の結晶シリコン系太陽電池を製造するためのスクリーン印刷版。 - 前記破断防止グリッド成型領域の前記等脚台形は、その下底の幅が0.050〜0.500mmであり、その上底の幅が前記正極細グリッド(2)の幅と同様であり、その高さが0.400〜1.600mmである、
ことを特徴とする請求項3に記載の結晶シリコン系太陽電池を製造するためのスクリーン印刷版。
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CN201810816108.6A CN109016807B (zh) | 2018-07-24 | 2018-07-24 | 用于正电极镂空成型的晶硅太阳能电池网版 |
CN201810816108.6 | 2018-07-24 | ||
PCT/CN2019/097299 WO2020020159A1 (zh) | 2018-07-24 | 2019-07-23 | 用于正电极镂空成型的晶硅太阳能电池网版 |
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JP2021532587A true JP2021532587A (ja) | 2021-11-25 |
JP7210696B2 JP7210696B2 (ja) | 2023-01-23 |
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EP (1) | EP3827987A4 (ja) |
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CN109016807B (zh) * | 2018-07-24 | 2023-12-01 | 浙江爱旭太阳能科技有限公司 | 用于正电极镂空成型的晶硅太阳能电池网版 |
CN112071922B (zh) * | 2020-09-09 | 2022-05-10 | 西安宏星电子浆料科技股份有限公司 | 一种太阳能正银栅线的网印方法 |
CN114801439A (zh) * | 2021-01-29 | 2022-07-29 | 环晟光伏(江苏)有限公司 | 一种太阳能电池se分布印刷网版结构及其印刷方法 |
CN113594273B (zh) * | 2021-08-27 | 2023-08-15 | 浙江晶科能源有限公司 | 一种电池片以及光伏组件 |
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- 2019-07-23 JP JP2021503889A patent/JP7210696B2/ja active Active
- 2019-07-23 EP EP19841550.7A patent/EP3827987A4/en active Pending
- 2019-07-23 KR KR1020217005564A patent/KR102548459B1/ko active IP Right Grant
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CN109016807A (zh) | 2018-12-18 |
JP7210696B2 (ja) | 2023-01-23 |
WO2020020159A1 (zh) | 2020-01-30 |
CN109016807B (zh) | 2023-12-01 |
KR102548459B1 (ko) | 2023-06-28 |
KR20210037697A (ko) | 2021-04-06 |
EP3827987A4 (en) | 2022-04-06 |
US20210245492A1 (en) | 2021-08-12 |
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