CN109037363A - 具有防断栅功能的晶硅太阳能电池的正电极 - Google Patents

具有防断栅功能的晶硅太阳能电池的正电极 Download PDF

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CN109037363A
CN109037363A CN201810816451.0A CN201810816451A CN109037363A CN 109037363 A CN109037363 A CN 109037363A CN 201810816451 A CN201810816451 A CN 201810816451A CN 109037363 A CN109037363 A CN 109037363A
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grid
breaking
section
grid section
positive electrode
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林纲正
丰明璋
方结彬
陈刚
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Zhejiang Love Solar Energy Technology Co Ltd
Zhejiang Aiko Solar Energy Technology Co Ltd
Guangdong Aiko Solar Energy Technology Co Ltd
Guangdong Aiko Technology Co Ltd
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Zhejiang Love Solar Energy Technology Co Ltd
Guangdong Aiko Technology Co Ltd
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Priority to PCT/CN2019/097297 priority patent/WO2020020158A1/zh
Priority to JP2021503890A priority patent/JP7210697B2/ja
Priority to EP19841116.7A priority patent/EP3828939A4/en
Priority to US17/262,690 priority patent/US11817511B2/en
Priority to KR1020217005560A priority patent/KR102555957B1/ko
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Abstract

本发明公开了具有防断栅功能的晶硅太阳能电池的正电极，包括正电极主栅、正电极细栅和防断栅结构，所述的防断栅结构和正电极细栅一体印刷成型，所述的防断栅结构为背面开设有镂空槽的八边形，防断栅结构由位于中部的矩形栅段以及位于矩形栅段两侧的且以矩形栅段为中心对称设置的两段等腰梯形栅段组成，所述的矩形栅段横跨正电极主栅，且矩形栅段左右两端伸出正电极主栅之外，伸出的栅段为矩形的外延防断栅段，所述的等腰梯形栅段的两端分别与外延防断栅段和正电极细栅相接触，所述的镂空槽位于等腰梯形栅段内或者横跨外延防断栅段与等腰梯形栅段。该正电极中的防断栅设计采用八边形和镂空槽相结合，可以有效降低正面电极印刷时断栅的几率。

Description

具有防断栅功能的晶硅太阳能电池的正电极
技术领域
本发明涉及太阳能电池结构，具体是指具有防断栅功能的晶硅太阳能电池的正电极。
背景技术
晶硅太阳能电池的正电极设计，包含主栅和与主栅垂直的细栅，细栅线的作用是为了将光生电流收集至主栅线，如果在印刷时细栅线出现断栅、虚印现象，则会影响光生电流的收集，影响电池效率。采用断栅的电池片制成组件，断栅处将出现局部发热的热斑现象，影响组件寿命。
造成太阳能电池印刷时断栅的原因分很多种，丝网参数设置不正确，网版线宽与浆料不匹配，网版堵塞，刮条磨损，浆料粘度过高或变干，硅片线痕等均会不同程度地造成断栅。丝网印刷时当刮条经过主栅到达主栅和细栅交接处的时候，由于透墨量迅速下降，对应细栅线的印刷高度降低，也会造成一定比例的断栅。鉴于这种情况，通常在主栅和细栅的连接处通过添加一定宽度的梯形防断栅来解决此类断栅问题。
采用常规的防断栅设计虽然可以降低电池正面印刷时断栅的几率，但随着组件对电池质量要求越来越高，常规的设计造成的断栅比例已经无法满足市场上的要求，因此需要有更加合理实用的设计来降低断栅的比例。
发明内容
本发明的目的是提供一种具有防断栅功能的晶硅太阳能电池的正电极，该正电极中的防断栅设计采用八边形和镂空槽相结合，可以有效降低正面电极印刷时断栅的几率，通过防止断栅，达到降低组件局部发热的热斑效应的功能。
本发明的上述目的通过如下技术方案来实现：具有防断栅功能的晶硅太阳能电池的正电极，包括正电极主栅、正电极细栅和防断栅结构，所述的防断栅结构和正电极细栅一体印刷成型，其特征在于：所述的防断栅结构为背面开设有镂空槽的八边形，防断栅结构由位于中部的矩形栅段以及位于矩形栅段两侧的且以矩形栅段为中心对称设置的两段等腰梯形栅段组成，所述的矩形栅段横跨正电极主栅，且矩形栅段左右两端伸出正电极主栅之外，伸出的栅段为矩形的外延防断栅段，所述的等腰梯形栅段的两端分别与外延防断栅段和正电极细栅相接触，所述的等腰梯形栅段为沿着自正电极主栅向正电极细栅的方向截面逐渐变小的减缩型栅段，所述的镂空槽位于等腰梯形栅段内或者横跨外延防断栅段与等腰梯形栅段。
本发明的正电极具有防断栅设计，防断栅设计为八边形和镂空槽相结合，八边形加宽加长连接主栅和细栅，印刷时起到足够的缓冲作用在八边形防断栅沿着印刷的方向叠加方形镂空设计，当印刷时刮条经过主栅到达方形镂空区域时，可使该防断栅区域高度增加，从而有效降低正面电极印刷时断栅的几率，保证细栅线最大限度的收集光生载流子，提高电池效率。同时，由于使用断栅的电池片做成组件，会增加组件的热斑效应，而本发明通过防止断栅，达到降低组件局部发热的热斑效应的功能。
本发明中，所述防断栅结构的总长度L1为2.4～3.4mm，外延防断栅段的宽度W1与矩形栅段的宽度相同，为0.050～0.090mm，外延防断栅段的长度L2为0.016～0.026mm，等腰梯形栅段与外延防断栅段相接触的一端的宽度与外延防断栅段的宽度相同，等腰梯形栅段与正电极细栅相接触的一端的宽度W2与正电极细栅的宽度相同，为0.025～0.050mm。
所述的八边形防断栅设计主栅和细栅连接处宽度为0.050～0.090mm，并保持此宽度外延至主栅边缘0.016～0.026mm处，该设计的作用是一方面可以防止主栅和细栅连接处透墨量迅速下降导致高度降低，另一方面是为了给方形镂空预留足够的上下空间，防止方形镂空上下区域过小引起断栅。八边形防断栅设计总长度为2.4～3.3mm，整个防断栅相比于常规防断栅设计整体加长，该设计的作用在于印刷的时候，起到足够的缓冲作用。
本发明中，所述的镂空槽为正方形孔，镂空槽的边长为0.034～0.084mm，镂空槽的中心与正电极主栅边缘之间的距离为0.033～0.068mm。
方形镂空设计，可以进一步提高主栅和细栅连接处防断栅效果；方形镂空设计，边长大小为0.034～0.084mm，其作用是当印刷时刮条经过方形镂空区域时，沿着印刷方向，该防断栅区域高度慢慢厽高，从而进一步提升防断栅效果。
与现有技术相比，本发明的正电极可以有效降低正面电极印刷时断栅的几率，保证细栅线最大限度的收集光生载流子，提高电池效率。同时，由于使用断栅的电池片做成组件，会增加组件的热斑效应，而本发明通过防止断栅，达到降低组件局部发热的热斑效应的功能，而且采用本发明，可以有效的降低组件局部发热的热斑效应，提高组件寿命。本发明结构设计简单，可应用范围广。
附图说明
下面结合附图和具体实施方式对本发明作进一步详细说明。
图1是包含本发明正电极的晶硅太阳能电池的正视图；
图2是本发明具有防断栅功能的晶硅太阳能电池的正电极的正面结构示意图；
图3是本发明具有防断栅功能的晶硅太阳能电池的正电极的背面结构示意图；
图4是本发明具有防断栅功能的晶硅太阳能电池的正电极中防断栅结构的正面结构示意图；
图5是本发明具有防断栅功能的晶硅太阳能电池的正电极中防断栅结构的背面结构示意图；
图6是本发明具有防断栅功能的晶硅太阳能电池的正电极中半个防断栅结构的背面结构示意图；
图7是本发明具有防断栅功能的晶硅太阳能电池的正电极中方形镂空区域印刷前后高度变化示意图。
附图标记说明
1、正电极主栅，2、正电极细栅，3、防断栅结构，31、矩形栅段，311、外延防断栅段，32、等腰梯形栅段，4、镂空槽，5、主栅区域，6、非叠加镂空槽的防断栅区域，7、叠加镂空槽的防断栅区域。
具体实施方式
如图1至图7所示的具有防断栅功能的晶硅太阳能电池的正电极，包括正电极主栅1、正电极细栅2和防断栅结构3，防断栅结构3和正电极细栅2一体印刷成型，防断栅结构3为背面开设有镂空槽4的八边形，防断栅结构3由位于中部的矩形栅段31以及位于矩形栅段31两侧的且以矩形栅段31为中心对称设置的两段等腰梯形栅段32组成，矩形栅段31横跨正电极主栅1，且矩形栅段31左右两端伸出正电极主栅1之外，伸出的栅段为矩形的外延防断栅段311，等腰梯形栅段32的两端分别与外延防断栅段311和正电极细栅2相接触，等腰梯形栅段32为沿着自正电极主栅1向正电极细栅2的方向截面逐渐变小的减缩型栅段，镂空槽4横跨外延防断栅段311与等腰梯形栅段32。
本实施例中，防断栅结构3的总长度L1为2.4～3.4mm，外延防断栅段311的宽度W1与矩形栅段31的宽度相同，为0.080mm，外延防断栅段311的长度L2为0.022mm，等腰梯形栅段32与外延防断栅段311相接触的一端的宽度与外延防断栅段311的宽度相同，等腰梯形栅段32与正电极细栅2相接触的一端的宽度W2与正电极细栅2的宽度相同，为0.034mm。
镂空槽4为正方形孔，镂空槽4的边长为0.050mm，镂空槽4的中心与正电极主栅1边缘之间的距离为0.038mm，此时镂空槽4横跨外延防断栅段311与等腰梯形栅段32。
作为本实施例的变换，防断栅结构3的总长度L1也可以在2.4～3.4mm范围内取值，外延防断栅段311的宽度W1也可以在0.050～0.090mm范围内取值，外延防断栅段311的长度L2也可以在0.016～0.026mm范围内取值，正电极细栅2的宽度也可以在0.025～0.050mm范围内取值，镂空槽4的边长也可以在0.034～0.084mm范围内取值，镂空槽4的中心与正电极主栅1边缘之间的距离也可以在0.033～0.068mm范围内取值。因此，镂空槽4也可以仅位于等腰梯形栅段32内。即镂空槽4可以设置在等腰梯形栅段32内，也可以横跨外延防断栅段311与等腰梯形栅段32。
本发明中镂空槽4的成型过程如下：在太阳能电池设计网版的时候，在网版对应防断栅结构镂空槽处增加一个凸出的方形感光乳剂，达到在防断栅结构镂空的目的，在实际印刷正电极时，就会在防断栅结构3的背面形成镂空槽4。
本发明太阳能电池的防断栅结构3采用设计为八边形和方形镂空的结合，外延防断栅段的宽度W1也即是正电极主栅1与正电极细栅2连接处宽度优先为0.050～0.090mm，外延防断栅段311的长度L2也即是外延防断栅段311距离正电极主栅1边缘的长度优先为0.016～0.026mm，并且设置方形的镂空槽4，该设计的作用是一方面可以防止主栅和细栅连接处透墨量迅速下降导致高度降低，另一方面是为了给方形镂空槽4预留足够的上下空间，防止方形镂空上下区域过小引起断栅。防断栅结构,3的总长度L1为2.4～3.4mm，整个防断栅相比于常规防断栅设计整体加长，该设计的作用在于印刷的时候，起到足够的缓冲作用。镂空槽4的设计可以进一步提高主栅和细栅连接处防断栅效果，具有加成作用。
本发明中方形镂空槽4的边长大小为0.034～0.084mm，镂空槽4的作用原理见图7，当印刷时刮条经过主栅区域5，对应的浆料印刷高度逐渐降低，直到进入非叠加镂空槽的防断栅区域6，印刷高度逐渐增加；而当印刷进入叠加镂空槽的防断栅区域7时，印刷高度快速厽高，从而进一步提升防断栅效果。
因此，本发明可以有效降低正面电极印刷时断栅的几率，保证细栅线最大限度的收集光生载流子，提高电池效率。同时，由于使用断栅的电池片做成组件，会增加组件的热斑效应，而本发明通过防止断栅，达到降低组件局部发热的热斑效应的功能，提高组件寿命。本发明结构设计简单，可应用范围广。
本发明的上述实施例并不是对本发明保护范围的限定，本发明的实施方式不限于此，凡此种种根据本发明的上述内容，按照本领域的普通技术知识和惯用手段，在不脱离本发明上述基本技术思想前提下，对本发明上述结构做出的其它多种形式的修改、替换或变更，均应落在本发明的保护范围之内。

Claims (5)

1.具有防断栅功能的晶硅太阳能电池的正电极，包括正电极主栅(1)、正电极细栅(2)和防断栅结构(3)，所述的防断栅结构(3)和正电极细栅(2)一体印刷成型，其特征在于：所述的防断栅结构(3)为背面开设有镂空槽(4)的八边形，防断栅结构(3)由位于中部的矩形栅段(31)以及位于矩形栅段(31)两侧的且以矩形栅段(31)为中心对称设置的两段等腰梯形栅段(32)组成，所述的矩形栅段(31)横跨正电极主栅(1)，且矩形栅段(31)左右两端伸出正电极主栅(1)之外，伸出的栅段为矩形的外延防断栅段(311)，所述的等腰梯形栅段(32)的两端分别与外延防断栅段(311)和正电极细栅(2)相接触，所述的等腰梯形栅段(32)为沿着自正电极主栅(1)向正电极细栅(2)的方向截面逐渐变小的减缩型栅段，所述的镂空槽(4)位于等腰梯形栅段(32)内或者横跨外延防断栅段(311)与等腰梯形栅段(32)。
2.如权利要求1所述的具有防断栅功能的晶硅太阳能电池的正电极，其特征在于：所述防断栅结构(3)的总长度L1为2.4～3.4mm。
3.如权利要求1所述的具有防断栅功能的晶硅太阳能电池的正电极，其特征在于：所述外延防断栅段(311)的宽度W1与矩形栅段(31)的宽度相同，为0.050～0.090mm，外延防断栅段(311)的长度L2为0.016～0.026mm。
4.如权利要求1所述的具有防断栅功能的晶硅太阳能电池的正电极，其特征在于：所述等腰梯形栅段(32)与外延防断栅段(311)相接触的一端的宽度与外延防断栅段(311)的宽度相同，等腰梯形栅段(32)与正电极细栅(2)相接触的一端的宽度W2与正电极细栅(2)的宽度相同，为0.025～0.050mm。
5.如权利要求1至4任一项所述的具有防断栅功能的晶硅太阳能电池的正电极，其特征在于：所述的镂空槽(4)为正方形孔，镂空槽(4)的边长为0.034～0.084mm，镂空槽(4)的中心与正电极主栅(1)边缘之间的距离为0.033～0.068mm。
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