JP2021527328A5 - - Google Patents

Info

Publication number
JP2021527328A5
JP2021527328A5 JP2020568515A JP2020568515A JP2021527328A5 JP 2021527328 A5 JP2021527328 A5 JP 2021527328A5 JP 2020568515 A JP2020568515 A JP 2020568515A JP 2020568515 A JP2020568515 A JP 2020568515A JP 2021527328 A5 JP2021527328 A5 JP 2021527328A5
Authority
JP
Japan
Prior art keywords
base material
metal base
rough
material includes
planar surface
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2020568515A
Other languages
English (en)
Japanese (ja)
Other versions
JP2021527328A (ja
JP7405776B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from PCT/US2019/033259 external-priority patent/WO2019240915A1/en
Publication of JP2021527328A publication Critical patent/JP2021527328A/ja
Publication of JP2021527328A5 publication Critical patent/JP2021527328A5/ja
Priority to JP2023210900A priority Critical patent/JP7776483B2/ja
Application granted granted Critical
Publication of JP7405776B2 publication Critical patent/JP7405776B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2020568515A 2018-06-14 2019-05-21 保護コーティングを有するプロセスチャンバプロセスキット Active JP7405776B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2023210900A JP7776483B2 (ja) 2018-06-14 2023-12-14 保護コーティングを有するプロセスチャンバプロセスキット

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201862685098P 2018-06-14 2018-06-14
US62/685,098 2018-06-14
PCT/US2019/033259 WO2019240915A1 (en) 2018-06-14 2019-05-21 Process chamber process kit with protective coating

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2023210900A Division JP7776483B2 (ja) 2018-06-14 2023-12-14 保護コーティングを有するプロセスチャンバプロセスキット

Publications (3)

Publication Number Publication Date
JP2021527328A JP2021527328A (ja) 2021-10-11
JP2021527328A5 true JP2021527328A5 (cg-RX-API-DMAC7.html) 2022-05-30
JP7405776B2 JP7405776B2 (ja) 2023-12-26

Family

ID=68840245

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2020568515A Active JP7405776B2 (ja) 2018-06-14 2019-05-21 保護コーティングを有するプロセスチャンバプロセスキット
JP2023210900A Active JP7776483B2 (ja) 2018-06-14 2023-12-14 保護コーティングを有するプロセスチャンバプロセスキット

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2023210900A Active JP7776483B2 (ja) 2018-06-14 2023-12-14 保護コーティングを有するプロセスチャンバプロセスキット

Country Status (6)

Country Link
US (3) US12354843B2 (cg-RX-API-DMAC7.html)
JP (2) JP7405776B2 (cg-RX-API-DMAC7.html)
KR (2) KR102828235B1 (cg-RX-API-DMAC7.html)
CN (2) CN112236839B (cg-RX-API-DMAC7.html)
TW (2) TWI880527B (cg-RX-API-DMAC7.html)
WO (1) WO2019240915A1 (cg-RX-API-DMAC7.html)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11664247B2 (en) 2020-10-16 2023-05-30 Applied Materials, Inc. Dynamic interface for providing a symmetric radio frequency return path
US20230064070A1 (en) * 2021-08-30 2023-03-02 Auo Crystal Corporation Semiconductor processing equipment part and method for making the same
US20230215702A1 (en) * 2021-12-30 2023-07-06 Applied Materials, Inc. Uniformity control for plasma processing using wall recombination
KR20250099351A (ko) * 2022-10-31 2025-07-01 램 리써치 코포레이션 반도체 프로세싱 챔버를 위한 이중층 기밀 원자 층 증착 코팅을 갖는 구성요소
US20250201527A1 (en) * 2023-12-19 2025-06-19 Applied Materials, Inc. High Conformal Coating on Textured Surface of Processing Chamber Component

Family Cites Families (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3362552B2 (ja) * 1995-03-10 2003-01-07 東京エレクトロン株式会社 成膜処理装置
US6251216B1 (en) * 1997-12-17 2001-06-26 Matsushita Electronics Corporation Apparatus and method for plasma processing
JPH11238722A (ja) * 1997-12-17 1999-08-31 Matsushita Electron Corp プラズマ処理装置及びプラズマ処理方法
US6863926B2 (en) 2002-01-15 2005-03-08 David Mark Lynn Corrosive-resistant coating over aluminum substrates for use in plasma deposition and etch environments
US6780787B2 (en) * 2002-03-21 2004-08-24 Lam Research Corporation Low contamination components for semiconductor processing apparatus and methods for making components
US7311797B2 (en) * 2002-06-27 2007-12-25 Lam Research Corporation Productivity enhancing thermal sprayed yttria-containing coating for plasma reactor
US20040033361A1 (en) * 2002-08-06 2004-02-19 Kabushiki Kaisha Kobe Seiko Sho(Kobe Steel, Ltd.) Component of glass-like carbon for CVD apparatus and process for production thereof
US7250114B2 (en) * 2003-05-30 2007-07-31 Lam Research Corporation Methods of finishing quartz glass surfaces and components made by the methods
JP4606121B2 (ja) * 2004-01-29 2011-01-05 京セラ株式会社 耐食膜積層耐食性部材およびその製造方法
JP2006128370A (ja) * 2004-10-28 2006-05-18 Tokyo Electron Ltd 成膜装置、成膜方法、プログラムおよび記録媒体
KR100915722B1 (ko) * 2005-06-23 2009-09-04 도쿄엘렉트론가부시키가이샤 반도체 처리 장치용의 구성 부재 및 그 제조 방법, 및반도체 처리 장치
US20060292310A1 (en) 2005-06-27 2006-12-28 Applied Materials, Inc. Process kit design to reduce particle generation
US7541094B1 (en) * 2006-03-03 2009-06-02 Quantum Global Technologies, Llc Firepolished quartz parts for use in semiconductor processing
US20080063798A1 (en) * 2006-08-30 2008-03-13 Kher Shreyas S Precursors and hardware for cvd and ald
US8097105B2 (en) 2007-01-11 2012-01-17 Lam Research Corporation Extending lifetime of yttrium oxide as a plasma chamber material
AT504482B1 (de) 2007-03-01 2008-06-15 Ruebig Gmbh & Co Kg Verfahren zur herstellung einer beschichtung
JP5475261B2 (ja) 2008-03-31 2014-04-16 東京エレクトロン株式会社 プラズマ処理装置
US20100272982A1 (en) * 2008-11-04 2010-10-28 Graeme Dickinson Thermal spray coatings for semiconductor applications
US8206829B2 (en) * 2008-11-10 2012-06-26 Applied Materials, Inc. Plasma resistant coatings for plasma chamber components
CN107731648B (zh) 2010-10-28 2020-02-14 应用材料公司 高纯度铝涂层硬阳极化
JP2014158009A (ja) * 2012-07-03 2014-08-28 Hitachi High-Technologies Corp 熱処理装置
US9337002B2 (en) * 2013-03-12 2016-05-10 Lam Research Corporation Corrosion resistant aluminum coating on plasma chamber components
GB2513575B (en) 2013-04-29 2017-05-31 Keronite Int Ltd Corrosion and erosion-resistant mixed oxide coatings for the protection of chemical and plasma process chamber components
US9711334B2 (en) 2013-07-19 2017-07-18 Applied Materials, Inc. Ion assisted deposition for rare-earth oxide based thin film coatings on process rings
US9583369B2 (en) * 2013-07-20 2017-02-28 Applied Materials, Inc. Ion assisted deposition for rare-earth oxide based coatings on lids and nozzles
CN106029948B (zh) 2014-01-17 2020-02-21 Iones株式会社 用于形成具有改善的等离子体耐受性的陶瓷涂层的方法和由此形成的陶瓷涂层
WO2015116455A1 (en) * 2014-01-31 2015-08-06 Applied Materials, Inc. Chamber coatings
US9869013B2 (en) 2014-04-25 2018-01-16 Applied Materials, Inc. Ion assisted deposition top coat of rare-earth oxide
US9790581B2 (en) 2014-06-25 2017-10-17 Fm Industries, Inc. Emissivity controlled coatings for semiconductor chamber components
US20160258064A1 (en) 2015-03-06 2016-09-08 Applied Materials, Inc. Barrier anodization methods to develop aluminum oxide layer for plasma equipment components
EP3165629A1 (en) 2015-11-06 2017-05-10 Rolls-Royce Corporation Plasma spray physical vapor deposition deposited environmental barrier coating
US20170291856A1 (en) * 2016-04-06 2017-10-12 Applied Materials, Inc. Solution precursor plasma spray of ceramic coating for semiconductor chamber applications
US10262839B2 (en) * 2016-06-14 2019-04-16 Taiwan Semiconductor Manufacturing Co., Ltd. Aluminum apparatus with aluminum oxide layer and method for forming the same
US20180016678A1 (en) 2016-07-15 2018-01-18 Applied Materials, Inc. Multi-layer coating with diffusion barrier layer and erosion resistant layer
TWM563652U (zh) * 2016-10-13 2018-07-11 美商應用材料股份有限公司 用於電漿處理裝置的腔室部件及包含其之裝置

Similar Documents

Publication Publication Date Title
JP2021527328A5 (cg-RX-API-DMAC7.html)
TWI714045B (zh) 用於半導體製造部件之高純度金屬頂塗層
JP5660748B2 (ja) 低温エアロゾル堆積方法及び物品
TWI389248B (zh) 用於電漿腔室部件的抗電漿塗層
JP2018190983A5 (cg-RX-API-DMAC7.html)
JP2018190983A (ja) チャンバコンポーネント用多層プラズマ腐食防護
US10217643B2 (en) Method of processing target object
JP2019194351A (ja) プラズマ環境にあるチャンバ構成要素のためのＹ２Ｏ３−ＺｒＯ２耐エロージョン性材料
WO2018209200A3 (en) Deposition of metal silicide layers on substrates and chamber components
TW201417151A (zh) 用於半導體裝置性能改善的塗層
JP2004523649A5 (cg-RX-API-DMAC7.html)
JP2003503597A5 (cg-RX-API-DMAC7.html)
JP2013503490A5 (cg-RX-API-DMAC7.html)
CN105990081B (zh) 等离子体处理装置及其制作方法
TW201417211A (zh) 用於等離子體處理腔室的靜電夾盤元件及製造方法
TW201931513A (zh) 用於半導體製程腔室部件的Y2O3-SiO2保護性塗佈
TW201923148A (zh) 耐電漿性塗布膜的製造方法及藉助於其而形成的耐電漿性構件
CN106463360B (zh) 用于薄膜沉积设备的内部材料及其制造方法
JP2009161846A5 (cg-RX-API-DMAC7.html)
JP2017022356A (ja) プラズマ処理装置及びシャワーヘッド
CN102676989A (zh) 镀膜件及其制备方法
JPH02101740A (ja) プラズマエッチング装置
US20130029094A1 (en) Coated article and method for making same
CN1897784A (zh) 通过粗糙化基座减少静电放电
JP2023546177A5 (cg-RX-API-DMAC7.html)