JP2021525952A - より短い対称的な接地経路を提供するための接地経路システム - Google Patents
より短い対称的な接地経路を提供するための接地経路システム Download PDFInfo
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- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 55
- 239000004020 conductor Substances 0.000 claims description 43
- 230000001174 ascending effect Effects 0.000 claims description 23
- 238000001816 cooling Methods 0.000 claims description 20
- 238000005229 chemical vapour deposition Methods 0.000 claims description 18
- 238000005086 pumping Methods 0.000 claims description 16
- 239000000758 substrate Substances 0.000 claims description 15
- 230000004888 barrier function Effects 0.000 claims description 10
- 210000002381 plasma Anatomy 0.000 abstract description 41
- 230000003071 parasitic effect Effects 0.000 abstract description 14
- 238000010586 diagram Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 description 12
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- 230000015572 biosynthetic process Effects 0.000 description 10
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- 229910001026 inconel Inorganic materials 0.000 description 7
- 239000012528 membrane Substances 0.000 description 7
- 239000010935 stainless steel Substances 0.000 description 7
- 229910001220 stainless steel Inorganic materials 0.000 description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- 229910045601 alloy Inorganic materials 0.000 description 6
- 239000000956 alloy Substances 0.000 description 6
- 230000008901 benefit Effects 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 238000000231 atomic layer deposition Methods 0.000 description 3
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 239000006227 byproduct Substances 0.000 description 2
- 230000037361 pathway Effects 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
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- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
- C23C16/45536—Use of plasma, radiation or electromagnetic fields
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- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
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Abstract
Description
Claims (15)
- チャンバであって、
処理容積部と、
前記チャンバ内に配置された接地ボウルおよび底部ボウルと、
ペデスタルであって、上昇処理位置と下降位置との間で前記ペデスタルを移動させるように構成されたリフトシステムに結合されたステムによって前記処理容積部内に配置されたペデスタルと、
を有するチャンバと、
前記接地ボウルを前記ペデスタルに結合している熱バリアと、
トラックに結合された底部ボウルキャリアであって、前記底部ボウルキャリアが、前記トラックに沿って直線的に移動して、前記底部ボウルを接地位置と移送位置との間で移動させるように構成されており、前記底部ボウルが、接地ボウル導体によって前記接地ボウルに結合されており、前記底部ボウルが、底部ボウル導体によって前記チャンバに結合されている、底部ボウルキャリアと、
を備える接地経路システム。 - 前記ステムが、冷却ハブに結合されたヒータークランプに結合されており、前記冷却ハブが、前記リフトシステムに接続されている、請求項1に記載のシステム。
- 前記上昇処理位置にある前記接地ボウルおよび前記接地位置にある前記底部ボウルが、前記処理容積部を二つに分けて、前記処理容積部の外側容積部から隔離された前記処理容積部の内側容積部を形成する、請求項2に記載のシステム。
- 前記ペデスタル内に配置された電極にRFマッチング回路を通って結合された高周波(RF)源を、さらに備え、前記RFマッチング回路が、冷却ハブおよび前記ステムを通って配置された導電性ロッドによって前記電極に電気的に結合された、請求項1または3に記載のシステム。
- 前記ペデスタルの垂直上方に配置されたフェースプレートを、さらに備える、請求項1、2、3、または4に記載のシステム。
- 前記接地位置にある前記底部ボウルが、前記チャンバのポンピングプレートに接触して、RFエネルギーが前記フェースプレートからRFマッチング回路に伝搬するための一次RFケージを形成する、請求項5に記載のシステム。
- 前記下降位置にある前記接地ボウルおよび前記移送位置にある前記底部ボウルが、前記チャンバを通って形成されたスリットバルブを通る、前記処理容積部へのおよび前記処理容積部からの基板の移送を容易にする、請求項1、2、3、4、5、または6に記載のシステム。
- チャンバ内に配置されるように構成された接地ボウルであって、前記チャンバが、
処理容積部と、
ペデスタルであって、上昇処理位置と下降位置との間で前記ペデスタルを移動させるように構成されたリフトシステムに接続された冷却ハブに結合されたステムによって前記処理容積部内に配置されたペデスタルと、
を有し、前記接地ボウルが、前記冷却ハブに結合されている、接地ボウルと、
前記接地ボウルに結合された接地ボウル導体であって、前記ペデスタルと前記接地ボウルが前記上昇処理位置にあるとき、圧縮状態にあり、前記ペデスタルと前記接地ボウルが前記下降位置にあるとき、拡張状態にある接地ボウル導体と、
を備える接地経路システム。 - 前記上昇処理位置にある前記接地ボウルが、前記処理容積部を二つに分けて、前記処理容積部の外側容積部から隔離された前記処理容積部の内側容積部を形成する、請求項8に記載のシステム。
- 前記ペデスタル内に配置された電極にRFマッチング回路を通って結合された高周波(RF)源を、さらに備え、前記RFマッチング回路が、前記冷却ハブおよび前記ステムを通って配置された導電性ロッドによって前記電極に電気的に結合された、請求項8または9に記載のシステム。
- 前記ペデスタルの垂直上方に配置されたフェースプレートを、さらに備える、請求項8、9、または10に記載のシステム。
- 前記上昇処理位置にある前記ペデスタルおよび前記接地ボウルが、前記チャンバのポンピングプレートに接触して、RFエネルギーが前記フェースプレートからRFマッチング回路に伝搬するための一次RFケージを形成するとき、前記接地ボウル導体が、圧縮状態にある、請求項11に記載のシステム。
- 前記下降位置にある前記接地ボウルが、前記チャンバを通って形成されたスリットバルブを通る、前記処理容積部へのおよび前記処理容積部からの基板の移送を容易にする、請求項8、9、10、11、または12に記載のシステム。
- ヒータークランプが、前記冷却ハブに結合されている、請求項8、9、10、11、12、または13に記載のシステム。
- 化学気相堆積(CVD)チャンバであって、
チャンバ本体であって、
処理容積部と、
ペデスタルであって、上昇処理位置と下降位置との間で前記ペデスタルを移動させるように接続された冷却ハブに結合されたステムによって前記処理容積部内に配置されたペデスタルと、
を有するチャンバ本体と、
前記チャンバ本体内に配置された接地経路システムであって、
熱バリアによって前記ステムと前記ペデスタルに結合された接地ボウルであって、前記冷却ハブに結合された接地ボウルと、
接地ボウル導体によって前記接地ボウルに結合され、底部ボウル導体によって前記チャンバに結合された底部ボウルと、
トラックに結合された底部ボウルキャリアであって、前記トラックに沿って直線的に移動して、前記底部ボウルを接地位置と移送位置との間で移動させるように構成された底部ボウルキャリアと、
を備える接地経路システムと、
を備える化学気相堆積(CVD)チャンバ。
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