JP2021524164A - Al1−xScxNおよびAlyGa1−yN材料を含む共通層上のフォトニックおよび電子装置 - Google Patents
Al1−xScxNおよびAlyGa1−yN材料を含む共通層上のフォトニックおよび電子装置 Download PDFInfo
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- JP2021524164A JP2021524164A JP2021513359A JP2021513359A JP2021524164A JP 2021524164 A JP2021524164 A JP 2021524164A JP 2021513359 A JP2021513359 A JP 2021513359A JP 2021513359 A JP2021513359 A JP 2021513359A JP 2021524164 A JP2021524164 A JP 2021524164A
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- 239000000463 material Substances 0.000 title claims abstract description 52
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- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims abstract description 6
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Abstract
Description
1- フォトニック導波層よりも低い屈折率を有する、サファイアのような別のウルツ型結晶上、またはフォトニック導波層とは異なるIII-窒化物結晶上に、フォトニック導波層をエピタキシャル成長させること、
2- III-窒化物フォトニック導波層を、二酸化ケイ素(SiO2)のような別の基板に移し、接合すること、
3- SiO2基板上のIII-窒化物をスパッタすること、
4- シリコンのような別の結晶質ファミリー材料上で、III-窒化物フォトニック導波層をエピタキシャル成長させること。
1- モジュレータを形成する量子井戸層のスタックの間の大きな結晶格子不整合;これは、層の厚さの増加を制限するとともに、光との相互作用における量子井戸の効率を低下させる。これは、波長が青色よりも長くなった場合(例えば緑色)、特に問題となる。この場合、厚い量子井戸が必要となり、これにより、緑色波長レーザおよびモジュレータの効率が急激に低下し得る。
2- 面内導波モジュレータおよび面内レーザの場合、フォトニック導波層に対する基本的要求仕様は、クラッド材料よりも大きな屈折率を有したまま、格子を、結晶質である下側または上側のクラッド材料と整合させることである。しかしながら、主な問題は、フォトニック導波層とクラッド材料の間の結晶格子の不整合(ミスマッチ)であり、これにより、モジュレータおよびレーザの全体的な特性を低下させる結晶中の転位の発生の開始を回避するための、フォトニック導波層の厚さの成長が制限される。
1. GaN/InGaNよりも低い屈折率を有し、これと格子整合されるAl1-xScxN(0<x<0.2)により、所望の最適なフォトニック導波層およびクラッド層厚さ(例えば、青色から緑色のスペクトルの波長に対して、〜200から300nmのフォトニック導波層厚さ)を有する面内モジュレータおよび面内レーザが可能となる:
2. Al1-xScxN(0<x<0.2)と格子整合されるGaN/InGaN量子井戸フォトニック導波層では、転移が有意に抑制され、量子井戸フォトニック導波層の改善された効率が得られる:
3. 垂直モジュレータおよび垂直放射レーザにおいて、DBRは、GaN/Al1-xScxNクラッド層のスタックを有し、そのような層は、高い材料層品質で、所望の厚さを有することができる。これは、GaNとAl1-xScxNとの間の結晶格子整合により、可能となる。ここで、0<x<0.2である。
Claims (30)
- 共通の単結晶構造上のフォトニック装置および電子装置を有する構造であって、
前記単結晶構造は、III族-N化合物およびアルミニウムスカンジウム窒化物の層を有し、
前記アルミニウムスカンジウム窒化物の層は、前記フォトニック装置および前記電子装置に共通である、構造。 - HEMTおよびフォトニック装置を有する構造であって、
当該構造は、
III族-N層と、該III族-N層の表面に設置されたAl1-xScxN層と、
を有し、
前記HEMTは、Al1-xScxN層の一部分を有し、前記フォトニック装置は、前記Al1-xScxN層の前記表面の異なる部分を有し、
ここで、0<x≦0.45である、構造。 - 電子装置およびフォトニック装置を有する構造であって、
III族-N層と、
該III族-N層の表面に配置されたAl1-xScxN層と、
を有し、
ここで、0<x≦0.45である、構造。 - 前記電子装置は、ヘテロ接合を有し、該ヘテロ接合を介して、前記半導体装置に供給される制御信号の制御下で、キャリアが、チャネルを介して領域の組の間を通過する、請求項1に記載の構造。
- 前記電子装置は、HEMTである、請求項4に記載の構造。
- 単結晶基板を有する構造であって、
前記単結晶基板上の電子装置およびフォトニック装置と、
当該構造に、前記電子装置用の2DEGチャネルを提供する層と、
を有し、
前記フォトニック装置は、前記2DEG層の上にクラッド層材料を有し、
前記クラッド層は、前記2DEG提供層と格子整合される、構造。 - 前記2DEGチャネルを提供する層は、GaNを有する、請求項6に記載の構造。
- III族-N層導波層を有し、
前記AlScN層は、ヘテロ接合を形成するバリア層を提供し、HEMT用の2DEGチャネルを提供する、請求項2に記載の構造。 - 前記クラッド層は、AlScNを有する、請求項6に記載の構造。
- 前記クラッド層は、Al1-xScxN材料を有し、ここで0<x≦0.45である、請求項6に記載の構造。
- 前記フォトニック導波層は、AlyGa1-yNを含む材料であり、ここで、Alはアルミニウム、Gaはガリウム、Nは窒素であり、0≦y≦1である、請求項7に記載の構造。
- 前記層は、核発生層/バッファ層である、請求項7に記載の構造。
- 前記層は、GaNを有する、請求項7に記載の構造。
- 前記層は、AlGaNを有する、請求項7に記載の構造。
- 前記クラッド層は、AlScNを有する、請求項7に記載の構造。
- 前記クラッド層は、Al1-xScxNを有し、ここで0<x≦0.45である、請求項7に記載の構造。
- 前記フォトニック導波層は、AlyGa1-yNを含む材料であり、ここで、Alはアルミニウム、Gaはガリウム、Nは窒素であり、0≦y≦1である、請求項6に記載の構造。
- 前記フォトニック装置は、前記電子装置と電気的に接続される、請求項1に記載の構造。
- 前記フォトニック装置は、前記電子装置と電気的に接続される、請求項6に記載の構造。
- 前記層は、GaNを有する、請求項18に記載の構造。
- 前記層は、AlGaNを有する、請求項18に記載の構造。
- 前記クラッド層は、AlScNを有する、請求項18に記載の構造。
- 前記クラッド層は、Al1-xScxN材料を有し、ここで0<x≦0.45である、請求項18に記載の構造。
- 前記層は、GaNを有する、請求項19に記載の構造。
- 前記層は、AlGaNを有する、請求項19に記載の構造。
- 前記クラッド層は、AlScNを有する、請求項19に記載の構造。
- 前記クラッド層は、Al1-xScxN材料を有し、ここで0<x≦0.45である、請求項19に記載の構造。
- 前記電子装置用の2DEGチャネルを提供する層を有する、請求項2に記載の構造。
- フォトニック集積回路であって、
Al1-xScxNを含むIII族-窒化物化合物材料と、
AlyGa1-yNのフォトニック導波層と、
を有し、
ここで、0<x≦0.45であり、0≦y≦1である、フォトニック集積回路。 - III族-N層導波層を有し、
前記AlScN層は、ヘテロ接合を形成するバリア層を提供し、前記HEMT用の2DEGチャネルを提供する、請求項6に記載の構造。
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