JP2021522688A - 発光素子パッケージ - Google Patents
発光素子パッケージ Download PDFInfo
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- JP2021522688A JP2021522688A JP2020560770A JP2020560770A JP2021522688A JP 2021522688 A JP2021522688 A JP 2021522688A JP 2020560770 A JP2020560770 A JP 2020560770A JP 2020560770 A JP2020560770 A JP 2020560770A JP 2021522688 A JP2021522688 A JP 2021522688A
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- 239000000463 material Substances 0.000 claims description 30
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- 239000012535 impurity Substances 0.000 description 5
- 229910010272 inorganic material Inorganic materials 0.000 description 4
- 239000011147 inorganic material Substances 0.000 description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052788 barium Inorganic materials 0.000 description 2
- 229910052791 calcium Inorganic materials 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000000295 emission spectrum Methods 0.000 description 2
- 230000020169 heat generation Effects 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
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- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 229910052712 strontium Inorganic materials 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 1
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
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- 239000007924 injection Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
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- -1 polytetrafluoroethylene Polymers 0.000 description 1
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 1
- 239000004810 polytetrafluoroethylene Substances 0.000 description 1
- 239000002096 quantum dot Substances 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
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- 229910000679 solder Inorganic materials 0.000 description 1
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- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
【選択図】図1
Description
Claims (20)
- 配線部が設けられた基板と、
前記基板上に設けられた反射膜と、
前記基板上に実装され、前記配線部に接続された発光素子と、
前記発光素子の上面に接触し、前記発光素子をカバーするカバー部と、を含み、
前記カバー部及び前記反射膜はテフロン(登録商標)系有機高分子を含み、前記反射膜の有機高分子は延伸及び膨張された発光素子パッケージ。 - 前記カバー部は、250nm〜400nmの波長帯域で85%以上の光透過率を有する、請求項1に記載の発光素子パッケージ。
- 前記基板上に設けられ、前記発光素子が配置されるキャビティを有する側壁部を有する、請求項1に記載の発光素子パッケージ。
- 前記側壁部の上面の高さは、前記基板の上面から前記発光素子の上面までの高さと同一である、請求項3に記載の発光素子パッケージ。
- 前記カバー部は、前記側壁部の上面及び前記発光素子の上面をカバーする、請求項4に記載の発光素子パッケージ。
- 前記カバー部は、前記発光素子の上面及び側面と接触し、前記発光素子をカバーする、請求項4に記載の発光素子パッケージ。
- 前記側壁部において、前記キャビティをなす内側面は傾斜している、請求項3に記載の発光素子パッケージ。
- 前記反射膜は、少なくとも一部が前記内側面上に設けられている、請求項7に記載の発光素子パッケージ。
- 前記カバー部は、前記発光素子の上面及び側面、及び前記基板の一部と接触してカバーする、請求項1に記載の発光素子パッケージ。
- 前記カバー部は、光透過材料を前記基板及び前記発光素子上に塗布した後、硬化することによって形成されている、請求項9に記載の発光素子パッケージ。
- 前記カバー部は、前記基板上に光透過材料を滴下した後、硬化することによって形成されている、請求項1に記載の発光素子パッケージ。
- 前記カバー部は、前記基板上に半球状で設けられている、請求項11に記載の発光素子パッケージ。
- 前記反射膜は、250nm〜400nmの波長帯域で85%以上の光反射率を有する、請求項1に記載の発光素子パッケージ。
- 前記反射膜は、微細多孔質の空隙を作るフィブリルによって互いに接続されたポリマーノードを有する、請求項13に記載の発光素子パッケージ。
- 前記反射膜の有機高分子は、延伸及び膨張されたポリテトラフルオロエチレンである、請求項14に記載の発光素子パッケージ。
- 前記基板、前記反射膜、及び前記カバー部のうち少なくとも一つは可撓性を有する、請求項1に記載の発光素子パッケージ。
- 前記配線部は、
前記基板の上面に設けられ、前記発光素子に接続された上部配線と、
前記基板を貫通して前記上部配線に接続された貫通配線と、
前記基板の下面に設けられ、前記貫通配線に接続された下部配線と、を含む、請求項1に記載の発光素子パッケージ。 - 前記発光素子はフリップチップ型である、請求項1に記載の発光素子パッケージ。
- 配線部が設けられた基板と、
前記基板上に設けられた反射膜と、
前記基板上に実装され、前記配線部に接続された発光素子と、
前記発光素子の上面に接触し、前記発光素子をカバーするカバー部と、を含み、
前記カバー部及び前記反射膜は有機高分子を含み、前記反射膜の有機高分子は、微細多孔質の空隙を作るフィブリルによって互いに接続されたポリマーノードを有する発光素子パッケージ。 - 配線部が設けられた基板と、
前記基板上に設けられた反射膜と、
前記基板上に実装され、前記配線部に接続された発光素子と、
前記発光素子の上面に接触し、前記発光素子をカバーするカバー部と、を含み、
前記反射膜及び前記カバー部は、それぞれ有機高分子を含み、
前記反射膜と前記カバー部は、互いに異なる厚さを有する発光素子パッケージ。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020180050438A KR102595821B1 (ko) | 2018-05-02 | 2018-05-02 | 발광 소자 패키지 |
KR10-2018-0050438 | 2018-05-02 | ||
PCT/KR2019/005259 WO2019212254A1 (ko) | 2018-05-02 | 2019-05-02 | 발광 소자 패키지 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2021522688A true JP2021522688A (ja) | 2021-08-30 |
JPWO2019212254A5 JPWO2019212254A5 (ja) | 2022-05-09 |
JP7500434B2 JP7500434B2 (ja) | 2024-06-17 |
Family
ID=68386344
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2020560770A Active JP7500434B2 (ja) | 2018-05-02 | 2019-05-02 | 発光素子パッケージ |
Country Status (6)
Country | Link |
---|---|
US (1) | US11955584B2 (ja) |
EP (1) | EP3790061A4 (ja) |
JP (1) | JP7500434B2 (ja) |
KR (2) | KR102595821B1 (ja) |
CN (1) | CN111448675B (ja) |
WO (1) | WO2019212254A1 (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102616602B1 (ko) * | 2018-10-01 | 2023-12-21 | 삼성디스플레이 주식회사 | 발광 장치 및 이의 제조 방법 |
JP2022109528A (ja) * | 2021-01-15 | 2022-07-28 | 豊田合成株式会社 | 紫外発光装置 |
Citations (8)
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JP2000502489A (ja) * | 1995-12-06 | 2000-02-29 | ダブリュ.エル.ゴア アンド アソシエイツ,インコーポレイティド | 光誘導チャンバー用の光反射面 |
JP2002226611A (ja) * | 2000-11-28 | 2002-08-14 | Asahi Glass Co Ltd | 光線透過性に優れたエチレン−テトラフルオロエチレン系及びテトラフルオロエチレン−ヘキサフルオロプロピレン系共重合体フィルム |
US20050006651A1 (en) * | 2003-06-27 | 2005-01-13 | Lockheed Martin Corporation | Light-emitting diode (LED) with amorphous fluoropolymer encapsulant and lens |
JP2010228192A (ja) * | 2009-03-26 | 2010-10-14 | Fuji Xerox Co Ltd | インクジェット記録用中間転写体及びインクジェット記録装置 |
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JP2017017110A (ja) * | 2015-06-29 | 2017-01-19 | 国立研究開発法人情報通信研究機構 | 深紫外光を放射する半導体発光素子、該半導体発光素子を備える発光モジュール、及び該半導体発光素子の製造方法 |
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2018
- 2018-05-02 KR KR1020180050438A patent/KR102595821B1/ko active IP Right Grant
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2019
- 2019-05-02 WO PCT/KR2019/005259 patent/WO2019212254A1/ko unknown
- 2019-05-02 JP JP2020560770A patent/JP7500434B2/ja active Active
- 2019-05-02 CN CN201980003121.2A patent/CN111448675B/zh active Active
- 2019-05-02 EP EP19796259.0A patent/EP3790061A4/en active Pending
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2020
- 2020-11-02 US US17/086,734 patent/US11955584B2/en active Active
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2023
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JP2017045902A (ja) * | 2015-08-27 | 2017-03-02 | 日機装株式会社 | 発光装置 |
US20180006203A1 (en) * | 2016-07-01 | 2018-01-04 | Rayvio Corporation | Ultraviolet emitting device |
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CN111448675B (zh) | 2024-05-14 |
CN111448675A (zh) | 2020-07-24 |
KR102595821B1 (ko) | 2023-10-30 |
EP3790061A4 (en) | 2022-01-26 |
WO2019212254A1 (ko) | 2019-11-07 |
US20210050483A1 (en) | 2021-02-18 |
KR20230153333A (ko) | 2023-11-06 |
KR20190126496A (ko) | 2019-11-12 |
US11955584B2 (en) | 2024-04-09 |
EP3790061A1 (en) | 2021-03-10 |
JP7500434B2 (ja) | 2024-06-17 |
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