JP2021501963A - イオン注入システム、イオン注入装置及び抽出プレート - Google Patents
イオン注入システム、イオン注入装置及び抽出プレート Download PDFInfo
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- JP2021501963A JP2021501963A JP2020523369A JP2020523369A JP2021501963A JP 2021501963 A JP2021501963 A JP 2021501963A JP 2020523369 A JP2020523369 A JP 2020523369A JP 2020523369 A JP2020523369 A JP 2020523369A JP 2021501963 A JP2021501963 A JP 2021501963A
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- 238000000605 extraction Methods 0.000 title claims description 82
- 238000005468 ion implantation Methods 0.000 title claims description 12
- 239000000463 material Substances 0.000 claims abstract description 17
- 150000002500 ions Chemical class 0.000 claims description 38
- 238000002513 implantation Methods 0.000 claims 1
- 239000011800 void material Substances 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 abstract description 22
- 239000000654 additive Substances 0.000 abstract description 14
- 230000000996 additive effect Effects 0.000 abstract description 14
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- 238000000034 method Methods 0.000 description 20
- 238000012545 processing Methods 0.000 description 18
- 239000002184 metal Substances 0.000 description 9
- 229910052751 metal Inorganic materials 0.000 description 9
- 238000010884 ion-beam technique Methods 0.000 description 8
- 239000000843 powder Substances 0.000 description 8
- 238000011282 treatment Methods 0.000 description 5
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- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 230000001788 irregular Effects 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
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- 238000013459 approach Methods 0.000 description 1
- 238000000149 argon plasma sintering Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000013532 laser treatment Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
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- 238000007639 printing Methods 0.000 description 1
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- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
- H01J37/3172—Maskless patterned ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/16—Vessels; Containers
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05B—CONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
- G05B13/00—Adaptive control systems, i.e. systems automatically adjusting themselves to have a performance which is optimum according to some preassigned criterion
- G05B13/02—Adaptive control systems, i.e. systems automatically adjusting themselves to have a performance which is optimum according to some preassigned criterion electric
- G05B13/0205—Adaptive control systems, i.e. systems automatically adjusting themselves to have a performance which is optimum according to some preassigned criterion electric not using a model or a simulator of the controlled system
- G05B13/021—Adaptive control systems, i.e. systems automatically adjusting themselves to have a performance which is optimum according to some preassigned criterion electric not using a model or a simulator of the controlled system in which a variable is automatically adjusted to optimise the performance
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J27/00—Ion beam tubes
- H01J27/02—Ion sources; Ion guns
- H01J27/022—Details
- H01J27/024—Extraction optics, e.g. grids
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J27/00—Ion beam tubes
- H01J27/02—Ion sources; Ion guns
- H01J27/20—Ion sources; Ion guns using particle beam bombardment, e.g. ionisers
- H01J27/205—Ion sources; Ion guns using particle beam bombardment, e.g. ionisers with electrons, e.g. electron impact ionisation, electron attachment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
- H01J37/06—Electron sources; Electron guns
- H01J37/075—Electron guns using thermionic emission from cathodes heated by particle bombardment or by irradiation, e.g. by laser
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
- H01J37/08—Ion sources; Ion guns
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
- H01L21/42—Bombardment with radiation
- H01L21/423—Bombardment with radiation with high-energy radiation
- H01L21/425—Bombardment with radiation with high-energy radiation producing ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/02—Details
- H01J2237/0203—Protection arrangements
- H01J2237/0213—Avoiding deleterious effects due to interactions between particles and tube elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/06—Sources
- H01J2237/061—Construction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/06—Sources
- H01J2237/08—Ion sources
- H01J2237/0815—Methods of ionisation
- H01J2237/0817—Microwaves
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- Analytical Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Optics & Photonics (AREA)
- Combustion & Propulsion (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- High Energy & Nuclear Physics (AREA)
- Toxicology (AREA)
- Evolutionary Computation (AREA)
- Computer Vision & Pattern Recognition (AREA)
- Automation & Control Theory (AREA)
- Medical Informatics (AREA)
- Software Systems (AREA)
- Artificial Intelligence (AREA)
- Electron Sources, Ion Sources (AREA)
Abstract
Description
Claims (15)
- 少なくとも1つの構成要素を具えるイオン注入システムであって、前記構成要素は熱勾配及び熱エネルギーの流れを制御するように構成された高密度領域及び低密度領域を有しているイオン注入システム。
- 請求項1に記載のイオン注入システムにおいて、前記少なくとも1つの構成要素を注入プレートとしたイオン注入システム。
- 請求項1に記載のイオン注入システムにおいて、前記低密度領域の内部が、前記少なくとも1つの構成要素を形成するのに用いた少なくとも1つのパラメータを変えることにより生ぜしめた格子パターン及びボイドの双方又は何れか一方を有するようにしたイオン注入システム。
- チャンバを画成する複数の壁部と、
前記チャンバ内にイオンを形成するイオン源と、
前記チャンバの一端に配置され、抽出孔を有している抽出プレートと
を具える装置において、前記抽出プレートが低密度領域及び高密度領域を有している装置。 - 請求項4に記載の装置において、前記抽出孔を囲む領域が前記高密度領域を有している装置。
- 請求項5に記載の装置において、前記抽出プレートの残りの部分が前記低密度領域を有している装置。
- 請求項5に記載の装置において、前記抽出プレートが更に、他の高密度領域と、前記高密度領域及び前記他の高密度領域を互いに接続する高密度チャネルとを有している装置。
- 請求項4に記載の装置において、前記低密度領域が格子パターンを有している装置。
- 請求項4に記載の装置において、前記低密度領域の内部が、前記抽出プレートを形成するのに用いた少なくとも1つの動作パラメータを変えることにより生ぜしめたボイドを有している装置。
- 請求項4に記載の装置において、前記低密度領域の相対密度を前記高密度領域の相対密度よりも少なくとも0.2だけ小さくし、相対密度は、前記抽出プレートの一部を形成するのに用いた材料の体積をこの一部の全体積で除したものとして規定した装置。
- 抽出孔を有する抽出プレートであって、この抽出プレートが低密度領域及び高密度領域を有しているようにした抽出プレート。
- 請求項11に記載の抽出プレートにおいて、前記抽出孔を囲む領域が前記高密度領域を有している抽出プレート。
- 請求項12に記載の抽出プレートにおいて、この抽出プレートの残りの部分が前記低密度領域を有している抽出プレート。
- 請求項11に記載の抽出プレートにおいて、前記低密度領域の内部が格子パターンを有している抽出プレート。
- 請求項11に記載の抽出プレートにおいて、前記低密度領域の内部が、前記抽出プレートを形成するのに用いた少なくとも1つの動作パラメータを変えることにより生ぜしめたボイドを有している抽出プレート。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US15/803,334 | 2017-11-03 | ||
US15/803,334 US10535499B2 (en) | 2017-11-03 | 2017-11-03 | Varied component density for thermal isolation |
PCT/US2018/054945 WO2019089191A1 (en) | 2017-11-03 | 2018-10-09 | Varied component density for thermal isolation |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2021501963A true JP2021501963A (ja) | 2021-01-21 |
JP7046175B2 JP7046175B2 (ja) | 2022-04-01 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2020523369A Active JP7046175B2 (ja) | 2017-11-03 | 2018-10-09 | イオン注入システム、イオン注入装置及び抽出プレート |
Country Status (6)
Country | Link |
---|---|
US (1) | US10535499B2 (ja) |
JP (1) | JP7046175B2 (ja) |
KR (1) | KR102429215B1 (ja) |
CN (1) | CN111279451B (ja) |
TW (1) | TWI705472B (ja) |
WO (1) | WO2019089191A1 (ja) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10714296B2 (en) * | 2018-12-12 | 2020-07-14 | Axcelis Technologies, Inc. | Ion source with tailored extraction shape |
US11232925B2 (en) * | 2019-09-03 | 2022-01-25 | Applied Materials, Inc. | System and method for improved beam current from an ion source |
US11120966B2 (en) | 2019-09-03 | 2021-09-14 | Applied Materials, Inc. | System and method for improved beam current from an ion source |
US10854416B1 (en) | 2019-09-10 | 2020-12-01 | Applied Materials, Inc. | Thermally isolated repeller and electrodes |
US11127558B1 (en) | 2020-03-23 | 2021-09-21 | Applied Materials, Inc. | Thermally isolated captive features for ion implantation systems |
US11810746B2 (en) | 2021-09-13 | 2023-11-07 | Applied Materials, Inc. | Variable thickness ion source extraction plate |
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JPS6276146A (ja) * | 1985-09-27 | 1987-04-08 | Nissin Electric Co Ltd | イオン処理装置用熱伝導体 |
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2017
- 2017-11-03 US US15/803,334 patent/US10535499B2/en active Active
-
2018
- 2018-10-09 KR KR1020207015424A patent/KR102429215B1/ko active IP Right Grant
- 2018-10-09 JP JP2020523369A patent/JP7046175B2/ja active Active
- 2018-10-09 WO PCT/US2018/054945 patent/WO2019089191A1/en active Application Filing
- 2018-10-09 CN CN201880069665.4A patent/CN111279451B/zh active Active
- 2018-10-25 TW TW107137765A patent/TWI705472B/zh active
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JPS6276146A (ja) * | 1985-09-27 | 1987-04-08 | Nissin Electric Co Ltd | イオン処理装置用熱伝導体 |
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US20150357151A1 (en) * | 2014-06-10 | 2015-12-10 | Axcelis Technologies, Inc. | Ion implantation source with textured interior surfaces |
JP2017523562A (ja) * | 2014-06-10 | 2017-08-17 | アクセリス テクノロジーズ, インコーポレイテッド | 織目加工された内面を有するイオン注入源 |
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CN111279451A (zh) | 2020-06-12 |
WO2019089191A1 (en) | 2019-05-09 |
CN111279451B (zh) | 2023-04-28 |
US20190139742A1 (en) | 2019-05-09 |
TW201931418A (zh) | 2019-08-01 |
KR102429215B1 (ko) | 2022-08-04 |
JP7046175B2 (ja) | 2022-04-01 |
TWI705472B (zh) | 2020-09-21 |
US10535499B2 (en) | 2020-01-14 |
KR20200066375A (ko) | 2020-06-09 |
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