JP2021169604A - 複合シリカ粒子を含有するケミカルメカニカルポリッシング組成物、シリカ複合粒子を製造する方法、及び基板を研磨する方法 - Google Patents

複合シリカ粒子を含有するケミカルメカニカルポリッシング組成物、シリカ複合粒子を製造する方法、及び基板を研磨する方法 Download PDF

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Publication number
JP2021169604A
JP2021169604A JP2021062836A JP2021062836A JP2021169604A JP 2021169604 A JP2021169604 A JP 2021169604A JP 2021062836 A JP2021062836 A JP 2021062836A JP 2021062836 A JP2021062836 A JP 2021062836A JP 2021169604 A JP2021169604 A JP 2021169604A
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JP
Japan
Prior art keywords
chemical mechanical
mechanical polishing
cerium
polishing composition
silica
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Pending
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JP2021062836A
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English (en)
Japanese (ja)
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JP2021169604A5 (enExample
Inventor
イ・グオ
Yi Guo
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DuPont Electronic Materials Holding Inc
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Rohm and Haas Electronic Materials CMP Holdings Inc
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Publication of JP2021169604A publication Critical patent/JP2021169604A/ja
Publication of JP2021169604A5 publication Critical patent/JP2021169604A5/ja
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/04—Aqueous dispersions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1436—Composite particles, e.g. coated particles
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1436—Composite particles, e.g. coated particles
    • C09K3/1445—Composite particles, e.g. coated particles the coating consisting exclusively of metals
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76819—Smoothing of the dielectric

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials Engineering (AREA)
  • Composite Materials (AREA)
  • Dispersion Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Silicon Compounds (AREA)
JP2021062836A 2020-04-15 2021-04-01 複合シリカ粒子を含有するケミカルメカニカルポリッシング組成物、シリカ複合粒子を製造する方法、及び基板を研磨する方法 Pending JP2021169604A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US16/849,135 US11384254B2 (en) 2020-04-15 2020-04-15 Chemical mechanical polishing composition containing composite silica particles, method of making the silica composite particles and method of polishing a substrate
US16/849,135 2020-04-15

Publications (2)

Publication Number Publication Date
JP2021169604A true JP2021169604A (ja) 2021-10-28
JP2021169604A5 JP2021169604A5 (enExample) 2024-03-27

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JP2021062836A Pending JP2021169604A (ja) 2020-04-15 2021-04-01 複合シリカ粒子を含有するケミカルメカニカルポリッシング組成物、シリカ複合粒子を製造する方法、及び基板を研磨する方法

Country Status (5)

Country Link
US (2) US11384254B2 (enExample)
JP (1) JP2021169604A (enExample)
KR (1) KR20210127876A (enExample)
CN (1) CN113528026B (enExample)
TW (1) TW202140741A (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP4053882A4 (en) * 2021-01-06 2022-10-26 Showa Denko Materials Co., Ltd. Polishing fluid, polishing fluid set, and polishing method
CN115197645B (zh) * 2021-04-02 2024-02-20 Sk恩普士有限公司 半导体工艺用抛光组合物以及半导体器件的制造方法
KR102728251B1 (ko) * 2021-12-31 2024-11-11 주식회사 케이씨텍 컨택 공정용 금속막 슬러리 조성물
CN116063930A (zh) * 2023-03-29 2023-05-05 国科大杭州高等研究院 一种半导体硅片抛光用的纳米硅铈复合抛光液的制备方法
WO2025108860A1 (en) * 2023-11-20 2025-05-30 Merck Patent Gmbh Silica particles, compositions comprising such particles, and uses of such particles and compositions

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US20030118824A1 (en) * 2001-12-20 2003-06-26 Tokarz Bozena Stanislawa Coated silica particles and method for production thereof
JP2009067627A (ja) * 2007-09-13 2009-04-02 Mitsui Mining & Smelting Co Ltd 酸化セリウム及びその製造方法
JP2017071753A (ja) * 2015-06-05 2017-04-13 エア プロダクツ アンド ケミカルズ インコーポレイテッドＡｉｒ Ｐｒｏｄｕｃｔｓ Ａｎｄ Ｃｈｅｍｉｃａｌｓ Ｉｎｃｏｒｐｏｒａｔｅｄ セリア被覆シリカ研磨剤を使用したバリア化学機械平坦化スラリー
JP2018101693A (ja) * 2016-12-20 2018-06-28 花王株式会社 研磨液組成物
JP2018170505A (ja) * 2017-03-29 2018-11-01 ローム アンド ハース エレクトロニック マテリアルズ シーエムピー ホウルディングス インコーポレイテッド カチオン性粒子含有スラリー及びスピンオン炭素膜のｃｍｐのためのその使用方法
JP2019071413A (ja) * 2017-10-05 2019-05-09 フジフィルム プラナー ソリューションズ、 エルエルシー 帯電した研磨剤を含有する研磨組成物
JP2019512876A (ja) * 2016-03-04 2019-05-16 ローム アンド ハース エレクトロニック マテリアルズ シーエムピー ホウルディングス インコーポレイテッド 半導体基材をケミカルメカニカル研磨する方法
JP2019081672A (ja) * 2017-10-30 2019-05-30 日揮触媒化成株式会社 セリア系複合微粒子分散液、その製造方法及びセリア系複合微粒子分散液を含む研磨用砥粒分散液
WO2019181487A1 (ja) * 2018-03-23 2019-09-26 富士フイルム株式会社 研磨液および化学的機械的研磨方法

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CN103339219B (zh) * 2011-01-25 2015-01-14 日立化成株式会社 Cmp研磨液及其制造方法、复合粒子的制造方法以及基体的研磨方法
EP3161095B8 (en) * 2014-06-25 2021-07-07 CMC Materials, Inc. Copper barrier chemical-mechanical polishing composition
US9293339B1 (en) * 2015-09-24 2016-03-22 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method of polishing semiconductor substrate
JP7062360B2 (ja) * 2016-12-28 2022-05-06 キヤノン株式会社 情報処理装置、情報処理装置の作動方法およびプログラム
US10995238B2 (en) * 2018-07-03 2021-05-04 Rohm And Haas Electronic Materials Cmp Holdings Neutral to alkaline chemical mechanical polishing compositions and methods for tungsten

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030118824A1 (en) * 2001-12-20 2003-06-26 Tokarz Bozena Stanislawa Coated silica particles and method for production thereof
JP2009067627A (ja) * 2007-09-13 2009-04-02 Mitsui Mining & Smelting Co Ltd 酸化セリウム及びその製造方法
JP2017071753A (ja) * 2015-06-05 2017-04-13 エア プロダクツ アンド ケミカルズ インコーポレイテッドＡｉｒ Ｐｒｏｄｕｃｔｓ Ａｎｄ Ｃｈｅｍｉｃａｌｓ Ｉｎｃｏｒｐｏｒａｔｅｄ セリア被覆シリカ研磨剤を使用したバリア化学機械平坦化スラリー
JP2019512876A (ja) * 2016-03-04 2019-05-16 ローム アンド ハース エレクトロニック マテリアルズ シーエムピー ホウルディングス インコーポレイテッド 半導体基材をケミカルメカニカル研磨する方法
JP2018101693A (ja) * 2016-12-20 2018-06-28 花王株式会社 研磨液組成物
JP2018170505A (ja) * 2017-03-29 2018-11-01 ローム アンド ハース エレクトロニック マテリアルズ シーエムピー ホウルディングス インコーポレイテッド カチオン性粒子含有スラリー及びスピンオン炭素膜のｃｍｐのためのその使用方法
JP2019071413A (ja) * 2017-10-05 2019-05-09 フジフィルム プラナー ソリューションズ、 エルエルシー 帯電した研磨剤を含有する研磨組成物
JP2019081672A (ja) * 2017-10-30 2019-05-30 日揮触媒化成株式会社 セリア系複合微粒子分散液、その製造方法及びセリア系複合微粒子分散液を含む研磨用砥粒分散液
WO2019181487A1 (ja) * 2018-03-23 2019-09-26 富士フイルム株式会社 研磨液および化学的機械的研磨方法

Also Published As

Publication number Publication date
KR20210127876A (ko) 2021-10-25
CN113528026A (zh) 2021-10-22
US11384254B2 (en) 2022-07-12
CN113528026B (zh) 2022-11-15
US20220177729A1 (en) 2022-06-09
US20210324236A1 (en) 2021-10-21
US11718769B2 (en) 2023-08-08
TW202140741A (zh) 2021-11-01

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