CN113528026B - 包含复合二氧化硅颗粒的化学机械抛光组合物、制造所述颗粒的方法以及抛光衬底的方法 - Google Patents

包含复合二氧化硅颗粒的化学机械抛光组合物、制造所述颗粒的方法以及抛光衬底的方法 Download PDF

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Publication number
CN113528026B
CN113528026B CN202110398366.9A CN202110398366A CN113528026B CN 113528026 B CN113528026 B CN 113528026B CN 202110398366 A CN202110398366 A CN 202110398366A CN 113528026 B CN113528026 B CN 113528026B
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cerium
mechanical polishing
chemical mechanical
substrate
particles
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Chinese (zh)
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CN113528026A (zh
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郭毅
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DuPont Electronic Materials Holding Inc
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Rohm and Haas Electronic Materials CMP Holdings Inc
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/04—Aqueous dispersions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1436—Composite particles, e.g. coated particles
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1436—Composite particles, e.g. coated particles
    • C09K3/1445—Composite particles, e.g. coated particles the coating consisting exclusively of metals
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76819—Smoothing of the dielectric

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials Engineering (AREA)
  • Composite Materials (AREA)
  • Dispersion Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Silicon Compounds (AREA)
CN202110398366.9A 2020-04-15 2021-04-06 包含复合二氧化硅颗粒的化学机械抛光组合物、制造所述颗粒的方法以及抛光衬底的方法 Active CN113528026B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US16/849,135 US11384254B2 (en) 2020-04-15 2020-04-15 Chemical mechanical polishing composition containing composite silica particles, method of making the silica composite particles and method of polishing a substrate
US16/849135 2020-04-15

Publications (2)

Publication Number Publication Date
CN113528026A CN113528026A (zh) 2021-10-22
CN113528026B true CN113528026B (zh) 2022-11-15

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US (2) US11384254B2 (enExample)
JP (1) JP2021169604A (enExample)
KR (1) KR20210127876A (enExample)
CN (1) CN113528026B (enExample)
TW (1) TW202140741A (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP4053882A4 (en) * 2021-01-06 2022-10-26 Showa Denko Materials Co., Ltd. Polishing fluid, polishing fluid set, and polishing method
CN115197645B (zh) * 2021-04-02 2024-02-20 Sk恩普士有限公司 半导体工艺用抛光组合物以及半导体器件的制造方法
KR102728251B1 (ko) * 2021-12-31 2024-11-11 주식회사 케이씨텍 컨택 공정용 금속막 슬러리 조성물
CN116063930A (zh) * 2023-03-29 2023-05-05 国科大杭州高等研究院 一种半导体硅片抛光用的纳米硅铈复合抛光液的制备方法
WO2025108860A1 (en) * 2023-11-20 2025-05-30 Merck Patent Gmbh Silica particles, compositions comprising such particles, and uses of such particles and compositions

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030118824A1 (en) * 2001-12-20 2003-06-26 Tokarz Bozena Stanislawa Coated silica particles and method for production thereof
JP4294710B2 (ja) * 2007-09-13 2009-07-15 三井金属鉱業株式会社 酸化セリウム及びその製造方法
CN103339219B (zh) * 2011-01-25 2015-01-14 日立化成株式会社 Cmp研磨液及其制造方法、复合粒子的制造方法以及基体的研磨方法
EP3161095B8 (en) * 2014-06-25 2021-07-07 CMC Materials, Inc. Copper barrier chemical-mechanical polishing composition
US10032644B2 (en) * 2015-06-05 2018-07-24 Versum Materials Us, Llc Barrier chemical mechanical planarization slurries using ceria-coated silica abrasives
US9293339B1 (en) * 2015-09-24 2016-03-22 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method of polishing semiconductor substrate
US10573524B2 (en) * 2016-03-04 2020-02-25 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method of chemical mechanical polishing a semiconductor substrate
JP6797665B2 (ja) * 2016-12-20 2020-12-09 花王株式会社 研磨液組成物
JP7062360B2 (ja) * 2016-12-28 2022-05-06 キヤノン株式会社 情報処理装置、情報処理装置の作動方法およびプログラム
US10037889B1 (en) * 2017-03-29 2018-07-31 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Cationic particle containing slurries and methods of using them for CMP of spin-on carbon films
US10428241B2 (en) * 2017-10-05 2019-10-01 Fujifilm Electronic Materials U.S.A., Inc. Polishing compositions containing charged abrasive
JP7020865B2 (ja) * 2017-10-30 2022-02-16 日揮触媒化成株式会社 セリア系複合微粒子分散液、その製造方法及びセリア系複合微粒子分散液を含む研磨用砥粒分散液
KR102795445B1 (ko) * 2018-03-23 2025-04-15 후지필름 가부시키가이샤 연마액 및 화학적 기계적 연마 방법
US10995238B2 (en) * 2018-07-03 2021-05-04 Rohm And Haas Electronic Materials Cmp Holdings Neutral to alkaline chemical mechanical polishing compositions and methods for tungsten

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Publication number Publication date
KR20210127876A (ko) 2021-10-25
JP2021169604A (ja) 2021-10-28
CN113528026A (zh) 2021-10-22
US11384254B2 (en) 2022-07-12
US20220177729A1 (en) 2022-06-09
US20210324236A1 (en) 2021-10-21
US11718769B2 (en) 2023-08-08
TW202140741A (zh) 2021-11-01

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