JP2021168418A - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP2021168418A JP2021168418A JP2021118336A JP2021118336A JP2021168418A JP 2021168418 A JP2021168418 A JP 2021168418A JP 2021118336 A JP2021118336 A JP 2021118336A JP 2021118336 A JP2021118336 A JP 2021118336A JP 2021168418 A JP2021168418 A JP 2021168418A
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- Prior art keywords
- film
- insulating film
- barrier metal
- metal portion
- upper electrode
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Abstract
【解決手段】半導体基板と、半導体基板上に設けられ、半導体基板を露出させる開口を有し、酸素を含む絶縁膜と、開口の底部に少なくとも設けられ、1種類以上の膜が積層された第1のバリアメタル部と、絶縁膜の上方に設けられた上部電極とを備え、絶縁膜の上面と上部電極との間にはバリアメタルが設けられていない、または、絶縁膜の上面と上部電極との間に第1のバリアメタル部と異なる構成の第2のバリアメタル部をさらに備える半導体装置を提供する。
【選択図】図1
Description
[先行技術文献]
[特許文献]
[特許文献1] 特開2008−160039号公報
[特許文献2] 特開2007−266483号公報
[特許文献3] 特開2011−249491号公報
Claims (11)
- 半導体基板と、
前記半導体基板上に設けられ、前記半導体基板を露出させる開口を有し、酸素を含む絶縁膜と、
前記開口の底部に少なくとも設けられ、1種類以上の膜が積層された第1のバリアメタル部と、
前記絶縁膜の上方に設けられた上部電極と、
前記絶縁膜の上面と前記上部電極との間に前記第1のバリアメタル部と異なる構成の第2のバリアメタル部と
を備える
半導体装置。 - 前記第2のバリアメタル部において、前記絶縁膜に接する膜はチタン膜ではなく、酸化チタン膜でもない
請求項1に記載の半導体装置。 - 前記第1のバリアメタル部は、チタン膜と、前記チタン膜上の窒化チタン膜との積層膜を有し、
前記第2のバリアメタル部は、窒化チタン膜を有する
請求項1または2に記載の半導体装置。 - 前記絶縁膜の前記開口に、タングステンを有するプラグをさらに備える
請求項1から3のいずれか一項に記載の半導体装置。 - 前記第2のバリアメタル部は、前記プラグと前記上部電極との間にも設けられる
請求項4に記載の半導体装置。 - 前記絶縁膜の上面と前記上部電極との間の前記第2のバリアメタル部と、前記プラグの上面と前記上部電極との間の前記第2のバリアメタル部とは連続している
請求項4または5に記載の半導体装置。 - 前記上部電極の材料は、シリコンを含む
請求項6に記載の半導体装置。 - 前記絶縁膜、前記第1のバリアメタル部、前記第2のバリアメタル部、および、前記上部電極を少なくとも有するパワー素子部と、前記パワー素子部を制御する制御回路部とが、前記半導体基板に設けられる
請求項1から7のいずれか一項に記載の半導体装置。 - 前記上部電極上において、前記上部電極に電気的に接続する銅ワイヤをさらに備える
請求項1から8のいずれか一項に記載の半導体装置。 - 半導体装置の製造方法であって、
半導体基板上に酸素を含む絶縁膜を形成する工程と、
前記半導体基板を露出させる開口を前記絶縁膜に形成する工程と、
前記開口の少なくとも底部に、1種類以上の膜が積層された第1のバリアメタル部を形成する工程と、
前記絶縁膜の上方に上部電極を形成する工程と、
前記絶縁膜の上面と前記上部電極との間に前記第1のバリアメタル部と異なる構成の第2のバリアメタル部を設ける工程と
を備える
半導体装置の製造方法。 - 第1のバリアメタル部を形成する工程の後であって、前記上部電極を形成する工程の前に、前記絶縁膜の前記開口の内に、タングステンを有するプラグを形成する工程をさらに備える
請求項10に記載の半導体装置の製造方法。
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US10217832B2 (en) | 2019-02-26 |
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