JP2021158133A5 - - Google Patents
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- Publication number
- JP2021158133A5 JP2021158133A5 JP2020054008A JP2020054008A JP2021158133A5 JP 2021158133 A5 JP2021158133 A5 JP 2021158133A5 JP 2020054008 A JP2020054008 A JP 2020054008A JP 2020054008 A JP2020054008 A JP 2020054008A JP 2021158133 A5 JP2021158133 A5 JP 2021158133A5
- Authority
- JP
- Japan
- Prior art keywords
- evacuation
- organic compound
- substrate
- silicon
- processing container
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 150000002894 organic compounds Chemical class 0.000 claims 22
- 239000000758 substrate Substances 0.000 claims 20
- 239000007833 carbon precursor Substances 0.000 claims 17
- 150000003377 silicon compounds Chemical class 0.000 claims 11
- 238000000034 method Methods 0.000 claims 8
- 239000012686 silicon precursor Substances 0.000 claims 7
- HMDDXIMCDZRSNE-UHFFFAOYSA-N [C].[Si] Chemical compound [C].[Si] HMDDXIMCDZRSNE-UHFFFAOYSA-N 0.000 claims 4
- 238000010438 heat treatment Methods 0.000 claims 4
- 230000001105 regulatory effect Effects 0.000 claims 4
- ZDWYFWIBTZJGOR-UHFFFAOYSA-N bis(trimethylsilyl)acetylene Chemical group C[Si](C)(C)C#C[Si](C)(C)C ZDWYFWIBTZJGOR-UHFFFAOYSA-N 0.000 claims 2
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 claims 2
- ULYLMHUHFUQKOE-UHFFFAOYSA-N trimethyl(prop-2-ynyl)silane Chemical group C[Si](C)(C)CC#C ULYLMHUHFUQKOE-UHFFFAOYSA-N 0.000 claims 2
- CWMFRHBXRUITQE-UHFFFAOYSA-N trimethylsilylacetylene Chemical group C[Si](C)(C)C#C CWMFRHBXRUITQE-UHFFFAOYSA-N 0.000 claims 2
- 230000001276 controlling effect Effects 0.000 claims 1
- 238000007599 discharging Methods 0.000 claims 1
- 238000013022 venting Methods 0.000 claims 1
Images
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2020054008A JP7437596B2 (ja) | 2020-03-25 | 2020-03-25 | 炭素ケイ素含有膜を形成する方法及び装置 |
| KR1020227035175A KR20220150973A (ko) | 2020-03-25 | 2021-03-12 | 탄화규소 함유막을 형성하는 방법 및 장치 |
| PCT/JP2021/010183 WO2021193160A1 (ja) | 2020-03-25 | 2021-03-12 | 炭化ケイ素含有膜を形成する方法及び装置 |
| US17/906,775 US20230154744A1 (en) | 2020-03-25 | 2021-03-12 | Method and apparatus for forming silicon carbide-containing film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2020054008A JP7437596B2 (ja) | 2020-03-25 | 2020-03-25 | 炭素ケイ素含有膜を形成する方法及び装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2021158133A JP2021158133A (ja) | 2021-10-07 |
| JP2021158133A5 true JP2021158133A5 (cg-RX-API-DMAC7.html) | 2023-01-19 |
| JP7437596B2 JP7437596B2 (ja) | 2024-02-26 |
Family
ID=77891802
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2020054008A Active JP7437596B2 (ja) | 2020-03-25 | 2020-03-25 | 炭素ケイ素含有膜を形成する方法及び装置 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US20230154744A1 (cg-RX-API-DMAC7.html) |
| JP (1) | JP7437596B2 (cg-RX-API-DMAC7.html) |
| KR (1) | KR20220150973A (cg-RX-API-DMAC7.html) |
| WO (1) | WO2021193160A1 (cg-RX-API-DMAC7.html) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7818489B2 (ja) | 2022-08-12 | 2026-02-20 | 東京エレクトロン株式会社 | 成膜方法および成膜装置 |
| KR20240043595A (ko) | 2022-09-27 | 2024-04-03 | 삼성전자주식회사 | 원자층 증착 방법 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH051380A (ja) * | 1991-06-24 | 1993-01-08 | Hoya Corp | 炭化ケイ素の成膜方法 |
| JP5959307B2 (ja) | 2011-06-22 | 2016-08-02 | 株式会社日立国際電気 | 半導体装置の製造方法、基板処理方法、基板処理装置およびプログラム |
| US8912101B2 (en) * | 2012-03-15 | 2014-12-16 | Asm Ip Holding B.V. | Method for forming Si-containing film using two precursors by ALD |
| JP5852151B2 (ja) * | 2014-02-12 | 2016-02-03 | 株式会社日立国際電気 | 半導体装置の製造方法、基板処理装置、プログラム及び記録媒体 |
| JP5855691B2 (ja) * | 2014-02-25 | 2016-02-09 | 株式会社日立国際電気 | 半導体装置の製造方法、基板処理装置、プログラム及び記録媒体 |
| JP6470057B2 (ja) * | 2015-01-29 | 2019-02-13 | 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ | 半導体装置の製造方法、基板処理装置およびプログラム |
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2020
- 2020-03-25 JP JP2020054008A patent/JP7437596B2/ja active Active
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2021
- 2021-03-12 US US17/906,775 patent/US20230154744A1/en not_active Abandoned
- 2021-03-12 WO PCT/JP2021/010183 patent/WO2021193160A1/ja not_active Ceased
- 2021-03-12 KR KR1020227035175A patent/KR20220150973A/ko not_active Ceased