JP2021153095A - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
- Publication number
- JP2021153095A JP2021153095A JP2020052530A JP2020052530A JP2021153095A JP 2021153095 A JP2021153095 A JP 2021153095A JP 2020052530 A JP2020052530 A JP 2020052530A JP 2020052530 A JP2020052530 A JP 2020052530A JP 2021153095 A JP2021153095 A JP 2021153095A
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- JP
- Japan
- Prior art keywords
- layer
- semiconductor device
- gold
- semiconductor
- silver particles
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 87
- 239000010931 gold Substances 0.000 claims abstract description 49
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims abstract description 44
- 229910052737 gold Inorganic materials 0.000 claims abstract description 40
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 37
- 229910052709 silver Inorganic materials 0.000 claims abstract description 37
- 239000004332 silver Substances 0.000 claims abstract description 37
- 229910052751 metal Inorganic materials 0.000 claims abstract description 30
- 239000002184 metal Substances 0.000 claims abstract description 30
- 239000002245 particle Substances 0.000 claims abstract description 30
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 34
- 229910052759 nickel Inorganic materials 0.000 claims description 17
- 229910021334 nickel silicide Inorganic materials 0.000 claims description 13
- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical compound [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 claims description 13
- 239000011800 void material Substances 0.000 claims description 13
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 10
- 239000010936 titanium Substances 0.000 claims description 10
- 229910052719 titanium Inorganic materials 0.000 claims description 10
- 239000000758 substrate Substances 0.000 description 17
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 16
- 229910010271 silicon carbide Inorganic materials 0.000 description 14
- 238000004519 manufacturing process Methods 0.000 description 12
- 238000000034 method Methods 0.000 description 10
- 238000010438 heat treatment Methods 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 5
- 239000000919 ceramic Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000011347 resin Substances 0.000 description 4
- 229920005989 resin Polymers 0.000 description 4
- 239000010944 silver (metal) Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- FOIXSVOLVBLSDH-UHFFFAOYSA-N Silver ion Chemical compound [Ag+] FOIXSVOLVBLSDH-UHFFFAOYSA-N 0.000 description 2
- 238000002149 energy-dispersive X-ray emission spectroscopy Methods 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 238000005224 laser annealing Methods 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000000523 sample Substances 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000005987 sulfurization reaction Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000010946 fine silver Substances 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 238000004451 qualitative analysis Methods 0.000 description 1
- 238000004445 quantitative analysis Methods 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
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Abstract
Description
16b 表面金属層(金属層)
20 接合層
20a 銀粒子
20b 金領域(領域)
20c ボイド
30 ニッケルシリサイド層(第2の中間層)
31 チタン層(第3の中間層)
32 ニッケル層(第1の中間層)
100 パワー半導体モジュール(半導体装置)
Claims (9)
- 半導体層と、
金属層と、
前記半導体層と前記金属層との間に設けられ、複数の銀粒子と、前記複数の銀粒子の間に存在する金を含む領域と、を含む接合層と、
を備える半導体装置。 - 前記複数の銀粒子の少なくとも一部は互いに接する請求項1記載の半導体装置。
- 前記領域は、前記複数の銀粒子を被覆する請求項1又は請求項2記載の半導体装置。
- 前記接合層はボイドを含み、前記領域は前記ボイドの内壁を被覆する請求項1ないし請求項3いずれか一項記載の半導体装置。
- 前記半導体層と前記接合層との間に設けられ、ニッケルを含む第1の中間層を、更に備える請求項1ないし請求項4いずれか一項記載の半導体装置。
- 前記第1の中間層の金の原子濃度は、前記接合層の金の原子濃度よりも低い請求項5記載の半導体装置。
- 前記半導体層と前記第1の中間層との間に設けられ、ニッケルシリサイドを含む第2の中間層を、更に備える請求項5又は請求項6記載の半導体装置。
- 前記第1の中間層と前記第2の中間層との間に設けられ、チタンを含む第3の中間層を、更に備える請求項7記載の半導体装置。
- 前記複数の銀粒子の平均粒径は、1nm以上100nm以下である請求項1ないし請求項8いずれか一項記載の半導体装置。
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JP2020052530A JP7293160B2 (ja) | 2020-03-24 | 2020-03-24 | 半導体装置 |
CN202010875372.4A CN113451247A (zh) | 2020-03-24 | 2020-08-27 | 半导体装置 |
US17/008,378 US11462508B2 (en) | 2020-03-24 | 2020-08-31 | Semiconductor device |
US17/898,177 US20220415848A1 (en) | 2020-03-24 | 2022-08-29 | Semiconductor device |
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JP2009094341A (ja) * | 2007-10-10 | 2009-04-30 | Renesas Technology Corp | 半導体装置、半導体装置の製造方法および接続材料 |
WO2012066803A1 (ja) * | 2010-11-16 | 2012-05-24 | 三菱電機株式会社 | 半導体素子、半導体装置及び半導体素子の製造方法 |
JP2013206765A (ja) * | 2012-03-29 | 2013-10-07 | Tanaka Kikinzoku Kogyo Kk | ダイボンド用導電性ペースト及び該導電性ペーストによるダイボンド方法 |
WO2018173493A1 (ja) * | 2017-03-24 | 2018-09-27 | 三菱電機株式会社 | 半導体装置及びその製造方法 |
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US20210305204A1 (en) | 2021-09-30 |
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