CN113140537A - 功率半导体器件和用于制造功率半导体器件的方法 - Google Patents

功率半导体器件和用于制造功率半导体器件的方法 Download PDF

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Publication number
CN113140537A
CN113140537A CN202110053182.9A CN202110053182A CN113140537A CN 113140537 A CN113140537 A CN 113140537A CN 202110053182 A CN202110053182 A CN 202110053182A CN 113140537 A CN113140537 A CN 113140537A
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power semiconductor
die
intermetallic compound
semiconductor device
sic
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CN202110053182.9A
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R·奥特伦巴
G·郎格尔
P·弗兰克
A·海因里希
A·卢德施特克-佩希洛夫
D·佩多内
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Infineon Technologies Austria AG
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Infineon Technologies Austria AG
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Abstract

本发明公开了一种SiC功率半导体器件，其包括：包括SiC和金属化层的功率半导体管芯，其中，金属化层包括第一金属；管芯载体，其中，功率半导体管芯布置在管芯载体之上，使得金属化层面对管芯载体，管芯载体至少部分地由包括Ni的镀覆部覆盖；以及第一金属间化合物，该第一金属间化合物布置在功率半导体管芯和镀覆部之间并且包括Ni3Sn4。

Description

功率半导体器件和用于制造功率半导体器件的方法
技术领域
本公开总体涉及SiC功率半导体器件及用于制造SiC功率半导体器件的方法。
背景技术
包括作为半导体材料的SiC(碳化硅)的功率半导体器件与包括诸如Si的另一种半导体材料的功率半导体器件相比可以呈现出数个重要的优点。SiC功率半导体器件可以包括机械和电连接到管芯载体的SiC功率半导体管芯。例如，这样的连接可以通过将SiC功率半导体管芯扩散焊接到管芯载体来实现。可能理想的是，所得到的焊料接合部提供低电阻和/或低热阻和/或高机械稳定性。还可能理想的是，所得到的焊料接合部对裂纹传播有抵抗力。此外，半导体器件制造业一直旨在改善制作工艺并减小制作成本。生成焊料接合部所需的焊料材料和工艺时间可能对功率半导体器件的总制造成本贡献很大的百分比。改善的功率半导体器件和改善的制造功率半导体器件的方法可以有助于解决这些和其他问题。
通过独立权利要求的特征解决本发明所基于的问题。在从属权利要求中描述了其他有利的示例。
发明内容
各个方面涉及SiC功率半导体器件，其包括：包括SiC和金属化层的功率半导体管芯，其中，金属化层包括第一金属；管芯载体，其中，功率半导体管芯布置在管芯载体之上，使得金属化层面对管芯载体，该管芯载体至少部分地由包括Ni的镀覆部(plating)覆盖；以及布置在功率半导体管芯和镀覆部之间并包括Ni3Sn4的第一金属间化合物。
各个方面涉及用于制造SiC功率半导体器件的方法，该方法包括：提供包括SiC的功率半导体管芯；在功率半导体管芯之上沉积金属化层，其中，金属化层包括第一金属；在管芯载体之上布置功率半导体管芯，使得金属化层面对管芯载体，该管芯载体至少部分地由包括Ni的镀覆部覆盖；以及将功率半导体管芯扩散焊接到管芯载体，由此在功率半导体管芯和镀覆部之间形成第一金属间化合物，其中，第一金属间化合物包括Ni3Sn4。
附图说明
附图示出了示例，并与说明书一起用作解释本公开的原理。本公开的其他示例和许多期望的优点将容易理解，因为参考以下具体实施方式，它们变得更好理解。附图的元件未必相对彼此成比例。相同的附图标记可以指示对应的类似部分。
图1是包括扩散焊接到管芯载体的SiC半导体管芯的功率半导体器件的截面图。
图2是包括SiC半导体管芯、第一金属间化合物和第二金属间化合物的另一功率半导体器件的截面图。
图3是前体装置的截面图，其中，SiC半导体管芯布置在管芯载体之上。通过使用扩散焊接工艺，可以将前体装置转换成功率半导体器件。
图4A至图4F是制造的各个阶段中另一功率半导体器件的截面图。
图5是用于制造功率半导体器件的方法的流程图
具体实施方式
在以下具体实施方式中，参考了附图。然而，对本领域中的技术人员显而易见的是，可以在更少程度的特定细节的情况下实践本公开的一个或多个方面。在其他实例中，为了帮助描述本公开的一个或多个方面，以示意性形式示出了已知结构和元件。就这一点而言，参考所描述的(一个或多个)附图的取向使用方向性术语，例如“顶部”、“底部”、“左”、“右”、“上部”、“下部”等。
可以使用术语“耦合”和“连接”连同其派生词。应当理解，这些术语可以用于指示：两个元件彼此协作或相互作用，无论其是否直接物理或电接触，或者它们彼此不直接接触；在“键合”、“附接”或“连接”的元件之间可以提供居间元件或层。然而，也有可能“键合”、“附接”或“连接”的元件彼此直接接触。而且，术语“示例性”仅仅表示示例，而非最佳或最优。
下列中描述的功率半导体器件的示例可以使用各种类型的半导体管芯或并入半导体管芯中的电路，其中有AC/DC或DC/DC转换器电路、功率MOS晶体管、功率肖特基二极管、JFET(结栅场效应晶体管)、功率双极型晶体管、逻辑集成电路、模拟集成电路、功率集成电路、具有集成无源器件的管芯等。
下文描述的功率半导体器件可以包括一个或多个功率半导体管芯。此外，可以在功率半导体器件中包括一个或多个逻辑集成电路。逻辑集成电路可以被配置为控制其他半导体管芯的集成电路，例如，功率半导体管芯的集成电路。
符号XY可以指至少包括作为另一成分的Y的X的合金。具体而言，它可以指包括作为唯一残余成分的Y的X的合金(即，封闭式组分)。即，在第二种情况下，符号XY可以表示合金XY具有由(X的重量百分比的)X和(Y的重量百分比的)Y构成的组分，该平衡仅仅是不可避免的元素。符号XYZ…可以具有类似含义，即“开放式组分”或“封闭式组分”，其中X、Y、Z…形成合金的唯一成分(除了不可避免的元素之外)。同样的情况可以适用于焊料组分。
图1示出了包括功率半导体管芯110、管芯载体120以及布置在功率半导体管芯110和管芯载体120之间的第一金属间化合物130的SiC功率半导体器件100。
功率半导体管芯110包括作为其半导体材料的SiC。功率半导体管芯110可以被配置为以高电压和/或高电流来操作。功率半导体管芯110可以被配置为能够在高温下操作，高温例如，175℃或更高的温度、或200℃或更高的温度。
功率半导体管芯110可以包括垂直晶体管结构，其中，垂直晶体管结构的第一功率电极被布置在面对管芯载体120的第一主面上，而第二功率电极被布置在相对的第二主面上。第一功率电极可以经由第一金属间化合物130电耦合到管芯载体120。
功率半导体管芯110可以很薄。例如，功率半导体管芯110可以具有150μm或更小、100μm或更小、或50μm或更小的厚度。在制造功率半导体器件100的期间，功率半导体管芯110可以耦合到框架以用于机械支撑。
功率半导体管芯110包括金属化层111，金属化层111包括第一金属。金属化层111可以布置在SiC单晶112上。金属化层111可以直接布置在单晶112上，或者可以在金属化层111和单晶112之间布置一个或多个另外的金属化层。金属化层111可以完全覆盖功率半导体管芯110的第一主面，或者它可以仅部分地覆盖第一主面。
例如，金属化层111中包括的第一金属可以是Ni、Ag、Au或Pt。金属化层111可以仅由第一金属构成，或者它可以包括第一金属和一种或多种另外的金属。例如，金属化层111可以包括NiV或由NiV构成。
金属化层111可以具有任何适当厚度(厚度为垂直于功率半导体管芯110的第一主面进行测量)。例如，金属化层111可以具有50nm到700nm的范围内的厚度。例如，金属化层111可以包括NiV或由NiV构成，并具有约500nm的厚度。例如，金属化层111的V含量可以是10wt％或更少、或者5wt％或更少。
根据另一个示例，金属化层111可以包括Ag、Au或Pt或由Ag、Au或Pt构成，并且可以具有约50nm至约100nm的厚度。
管芯载体120可以是导电的，并且它可以电耦合到功率半导体管芯110。例如，管芯载体120可以是引线框架、直接铜键合(DCB)衬底、直接铝键合(DAB)衬底或活性金属钎焊(AMB)衬底。例如，管芯载体120可以包括Cu或由Cu构成。
管芯载体120至少部分地由镀覆部140覆盖。具体而言，管芯载体120的面向功率半导体管芯110的表面可以部分地或完全地由镀覆部140覆盖。例如，镀覆部140可以经由电镀技术或任何其他适当的沉积技术来制造。镀覆部140可以包括Ni。镀覆部140还可以由Ni构成。根据另一个示例，镀覆部140可以包括NiP、或NiPd、或NiPdAu、或NiPdAuAg或者由NiP、或NiPd、或NiPdAu、或NiPdAuAg构成。例如，镀覆部140的P含量或Pd含量和/或Au含量和/或Ag含量可以是10wt％或更少、或者5wt％或更少。例如，镀覆部的Ni含量可以是90wt％或更多。由NiP、或NiPd、或NiPdAu、或NiPdAuAg构成的镀覆部140可以比由纯Ni构成的镀覆部140对氧化更有抵抗力。
根据示例，例如，镀覆部140可以具有2μm或更小、或1.6μm或更小、或1μm或更小的厚度。镀覆部140可以比管芯载体120更薄，尤其比管芯载体120薄得多。
第一金属间化合物130布置在功率半导体管芯110和镀覆部140之间。第一金属间化合物130可以直接布置在金属化层111上。然而，还可以在金属化层111和第一金属间化合物130之间布置一个或多个另外的金属层。
第一金属间化合物130可以直接布置在镀覆部140上。然而，还可以在镀覆部140和第一金属间化合物130之间布置一个或多个另外的金属层。
第一金属间化合物130可以是在制造功率半导体器件100的期间执行的扩散焊接工艺的产物。这样的扩散焊接工艺可以包括布置在金属化层111上的与金属化层111(例如，与金属化层111的Ni)并与镀覆部140(例如，与镀覆部140的Ni)反应的Sn层。
第一金属间化合物130包括Ni3Sn4或由Ni3Sn4构成。第一金属间化合物130可以具有任何适当的厚度。例如，第一金属间化合物130可以具有2μm或更小、或1.6μm或更小、或1.2μm或更小、或1μm或更小的厚度。可以选择前体Sn层的厚度，使得在扩散焊接之后没有保留未反应的Sn。
根据示例，第一金属间化合物130可以包括从金属化层111指向镀覆部140的第一金属间生长结构以及从镀覆部140指向金属化层111的第二金属间生长结构。
图2示出了另一个功率半导体器件200，其可以与功率半导体器件100类似或相同，除了下文中描述的差异之外。
功率半导体器件200包括第一金属间化合物130，并且还包括第二金属间化合物210。第二金属间化合物210具有的材料组分可以不同于第一金属间化合物130的材料组分。
例如，第二金属间化合物210可以布置在第一金属间化合物的块内。第二金属间化合物210还可以布置在第一金属间化合物130和镀覆部140之间或第一金属间化合物130和金属化层111之间。
根据示例，第二金属间化合物210形成布置在第一金属间化合物130内的沉淀物220。沉淀物220可以是第一金属间化合物130内的不连贯的包含物。例如，沉淀物220可以具有达到第一金属间化合物130的厚度的60％或更小的直径。
根据示例，沉淀物220基本布置在平面230中(即，每个沉淀物220的中心或大部分沉淀物220的中心或大量沉淀物220的中心可以布置在平面230内)。例如，平面230可以布置在金属化层111和镀覆部140之间的中间。然而，平面230也可以布置得更接近金属化层111或更接近镀覆部140。
根据示例，第二金属间化合物210包括Ag。例如，第二金属间化合物可以包括Ag3Sn或由Ag3Sn构成。
图3示出了根据示例的在将功率半导体管芯110扩散焊接到管芯载体120上之前的功率半导体器件100或200的前体装置300。
前体装置300包括具有金属化层111的功率半导体管芯110和具有镀覆部140的管芯载体120。前体装置300还包括布置在金属化层111和镀覆部140之间的焊料材料层310。焊料材料层310包括能够与金属化层111的金属和镀覆部140的金属形成金属间相的金属。例如，焊料材料层310可以包括具有相对低的熔点的金属，并且金属化层111和镀覆部140均可以包括具有相对高的熔点的金属。例如，焊料材料层310可以包括Sn或由Sn构成，并且金属化层111和镀覆部140均可以包括Ni。第一金属间化合物130可以是焊料材料层310与金属化层111和镀覆部140反应的产物。
根据示例，焊料材料层310基本上由Sn构成。具体而言，焊料材料层310不包括作为焊料材料的AuSn。例如，使用Sn替代AuSn作为焊料材料可以更有成本效率。
例如，焊料材料层310可以具有2μm或更小、或1.6μm或更小、或1.2μm或更小、或1μm或更小的厚度。
前体装置300可以可选地包括布置在金属化层111和SiC单晶112之间的第一附加金属化层320。例如，第一附加金属化层320可以包括Ti或由Ti构成。例如，第一附加金属化层320可以具有约100nm的厚度。
前体装置300可以可选地包括布置在第一附加金属化层320和SiC单晶112之间的第二附加金属化层330。例如，第二附加金属化层330可以包括NiSi或CuSi或由NiSi或CuSi构成。例如，第二附加金属化层330可以具有约40nm的厚度。
前体装置300可以可选地包括布置在焊料材料层310上的顶层340。顶层340可以被配置作为防止焊料材料层310的氧化的氧化防止层。顶层340可以包括能够与焊料材料层310的金属形成金属间相的金属。第二金属间化合物210(参见图2)可以是扩散焊接工艺期间顶层340与焊料材料层310反应的产物。
顶层340可以包括Ag或由Ag构成。根据另一个示例，顶层340包括Au或由Au构成。顶层340可以具有约50nm、约100nm或约20nm的厚度。
功率半导体管芯110可以布置在管芯载体120上，使得顶层340接触镀覆部140。
图4A至图4F示出了根据用于制造功率半导体器件的方法的示例的在制造的各个阶段中的功率半导体器件400。功率半导体器件400可以与功率半导体器件100和200类似或相同。
如图4A中所示，提供半导体晶圆410。半导体晶圆410包括SiC或由SiC构成。半导体晶圆410可以很薄。例如，可以使用背侧研磨工艺或任何其他适当的工艺来减薄半导体晶圆410。半导体晶圆的一侧(例如图4A中的上侧)可以附接到机械支撑，例如，胶带或框架。
如图4B中所示，例如，通过使用溅射工艺或任何其他适当的沉积技术在半导体晶圆410上沉积金属化层111。根据示例，在沉积金属化层111之前在半导体晶圆上沉积第一附加金属化层320和/或第二附加金属化层330(图4B中未示出)。
如图4C中所示，在金属化层111上沉积焊料材料层310。例如，沉积焊料材料层310可以包括将焊料材料分配到金属化层111上，或者可以包括在金属化层111上沉积焊料预制件。根据示例，焊料材料可以包括助熔剂，并且，例如，可以向沉积的焊料材料施加热量以去除助熔剂。根据示例，在焊料材料层310(图4C中未示出)上沉积顶层340。例如，沉积顶层340可以包括溅射或任何其他适当的沉积技术。
如图4D中所示，将半导体晶圆410单个化为个体的功率半导体管芯110。单个化可以包括沿预定义切口420切割半导体晶圆410。
如图4E中所示，单个化的功率半导体管芯110布置在管芯载体120上，使得焊料材料层310面对镀覆部140。在管芯载体120上布置功率半导体管芯110可以包括使用拾取和放置工艺。
如图4F中所示，将功率半导体管芯110扩散焊接到管芯载体120，由此形成第一金属间化合物130。根据示例，扩散焊接还包括形成第二金属间化合物210，例如如图2中所示(例如，可以在顶层340沉积在焊料材料层310上的情况下形成第二金属间化合物210)。
扩散焊接可以包括将高温(例如，250℃或更高、或300℃或更高、或350℃或更高、或400℃或更高)和/或高压(例如，2N/mm2或更高、或4N/mm2或更高、或6N/mm2或更高)施加到功率半导体管芯110和管芯载体120上。由于功率半导体管芯110包括SiC并且由于SiC比例如Si具有更高的机械鲁棒性，所以可以用比例如包括Si的功率半导体管芯更大的力将功率半导体管芯110压到管芯载体120上。例如，施加更高的压力可以导致扩散焊接工艺的必要工艺时间和/或必要工艺温度的减小。
图5是示出用于制造功率半导体器件的方法500的流程图。例如，方法500可以用于制造功率半导体器件100、200或400。
方法500包括：在501处提供包括SiC的功率半导体管芯的动作；在502处在功率半导体管芯之上沉积金属化层的动作，其中，金属化层包括第一金属；在503处在管芯载体之上布置功率半导体管芯使得金属化层面对管芯载体的动作，该管芯载体至少部分地由包括Ni的镀覆部覆盖；以及在504处将功率半导体管芯扩散焊接到管芯载体，由此在功率半导体管芯和镀覆部之间形成第一金属间化合物的动作，其中，第一金属间化合物包括Ni3Sn4。
根据方法500的示例，扩散焊接可选地包括用2N/mm2或更大、或4N/mm2或更大、或6N/mm2或更大的压力将功率半导体管芯压到管芯载体上。根据方法500的另一个示例，扩散焊接可以附加地或替代地包括施加250℃或更高、300℃或更高、350℃或更高、400℃或更高、或约500℃的热量。
动作504的扩散焊接可以可选地包括在扩散焊接期间形成包括第二金属间化合物的沉淀物，其中，第二金属间化合物包括Ag3Sn。
示例
在下文中，使用具体示例进一步描述功率半导体器件和用于制造功率半导体器件的方法。
示例1是一种SiC功率半导体器件，其包括：包括SiC和金属化层的功率半导体管芯，其中，金属化层包括第一金属；管芯载体，其中，功率半导体管芯布置在管芯载体之上，使得金属化层面对管芯载体，管芯载体至少部分地由包括Ni的镀覆部覆盖；以及第一金属间化合物，该第一金属间化合物布置在功率半导体管芯和镀覆部之间并且包括Ni3Sn4。
示例2是示例1的SiC功率半导体器件，其中，第一金属为Ni、Ag、Au或Pt。
示例3是示例1或示例2的SiC功率半导体器件，还包括：布置在第一金属间化合物内的第二金属间化合物的沉淀物，第二金属间化合物包括与第一金属间化合物不同的材料组分。
示例4是示例3的SiC功率半导体器件，其中，第二金属间化合物包括Ag3Sn。
示例5是示例3或示例4的SiC功率半导体器件，其中，沉淀物基本布置在平行于管芯载体的平面中。
示例6是示例3至5中任一项的SiC功率半导体器件，其中，沉淀物基本布置在金属化层和镀覆部之间的中间。
示例7是前述示例中任一项的SiC功率半导体器件，其中，镀覆部包括NiP、或NiPd、或NiPdAu、或NiPdAuAg。
示例8是前述示例中任一项的SiC功率半导体器件，其中，第一金属间化合物具有1μm至2μm的范围内的厚度。
示例9是前述示例中任一项的SiC功率半导体器件，其中，管芯载体包括引线框架、DCB、DAB、或AMB。
示例10是前述示例中任一项的SiC功率半导体器件，其中，功率半导体管芯包括垂直晶体管结构，其中，垂直晶体管结构的功率电极经由第一金属间化合物电耦合到管芯载体。
示例11是前述示例中任一项的SiC功率半导体器件，其中，功率半导体管芯具有150μm或更小的厚度。
示例12是一种用于制造SiC功率半导体器件的方法，该方法包括：提供包括SiC的功率半导体管芯；在功率半导体管芯之上沉积金属化层，其中，金属化层包括第一金属；在管芯载体之上布置功率半导体管芯，使得金属化层面对管芯载体，该管芯载体至少部分地由包括Ni的镀覆部覆盖；以及将功率半导体管芯扩散焊接到管芯载体，由此在功率半导体管芯和镀覆部之间形成第一金属间化合物，其中，第一金属间化合物包括Ni3Sn4。
示例13是示例12的方法，其中，扩散焊接包括：用2N/mm2或更大的压力将功率半导体管芯压到管芯载体上。
示例14是示例12或示例13的方法，其中，扩散焊接包括：施加250℃或更高的热量。
示例15是示例12至14中任一项的方法，还包括：在功率半导体管芯之上沉积Ag层；以及在扩散焊接期间形成包括第二金属间化合物的沉淀物，其中，第二金属间化合物包括Ag3Sn。
示例16是一种装置，其包括被配置为执行示例12至15中任一项的方法的模块(mean)。
尽管已经针对一种或多种实施方式说明和描述了本公开，但可以在不脱离所附权利要求的精神和范围的情况下对说明的示例做出改变和/或修改。具体而言，至于由上述部件或结构(组件、器件、电路、系统等)执行的各种功能，除非另行指出，用于描述这种部件的术语(包括提到“模块”)，除非另行指出，用于描述这样的部件的术语旨在对应于执行所述部件的特定功能的任何部件或结构(即，功能上等同)，尽管在结构上不等同于执行本公开的本文说明的示例性实施方式中的功能的所公开的结构。

Claims (15)

1.一种SiC功率半导体器件，包括：
功率半导体管芯，所述功率半导体管芯包括SiC和金属化层，其中，所述金属化层包括第一金属，
管芯载体，其中，所述功率半导体管芯布置在所述管芯载体之上，使得所述金属化层面对所述管芯载体，所述管芯载体至少部分地由包括Ni的镀覆部覆盖，以及
第一金属间化合物，所述第一金属间化合物布置在所述功率半导体管芯和所述镀覆部之间并包括Ni3Sn4。
2.根据权利要求1所述的SiC功率半导体器件，其中，所述第一金属为Ni、Ag、Au、或Pt。
3.根据权利要求1或权利要求2所述的SiC功率半导体器件，还包括：
第二金属间化合物的沉淀物，所述第二金属间化合物的沉淀物布置在所述第一金属间化合物内，所述第二金属间化合物包括与所述第一金属间化合物不同的材料组分。
4.根据权利要求3所述的SiC功率半导体器件，其中，所述第二金属间化合物包括Ag3Sn。
5.根据权利要求3或权利要求4所述的SiC功率半导体器件，其中，所述沉淀物基本布置在平行于所述管芯载体的平面中。
6.根据权利要求3至5中任一项所述的SiC功率半导体器件，其中，所述沉淀物基本布置在所述金属化层和所述镀覆部之间的中间。
7.根据前述权利要求中任一项所述的SiC功率半导体器件，其中，所述镀覆部包括NiP、或NiPd、或NiPdAu、或NiPdAuAg。
8.根据前述权利要求中任一项所述的SiC功率半导体器件，其中，所述第一金属间化合物具有1μm至2μm的范围内的厚度。
9.根据前述权利要求中任一项所述的SiC功率半导体器件，其中，所述管芯载体包括引线框架、DCB、DAB或AMB。
10.根据前述权利要求中任一项所述的SiC功率半导体器件，其中，所述功率半导体管芯包括垂直晶体管结构，其中，所述垂直晶体管结构的功率电极经由所述第一金属间化合物电耦合到所述管芯载体。
11.根据前述权利要求中任一项所述的SiC功率半导体器件，其中，所述功率半导体管芯具有150μm或更小的厚度。
12.一种用于制造SiC功率半导体器件的方法，所述方法包括：
提供包括SiC的功率半导体管芯，
在所述功率半导体管芯之上沉积金属化层，其中，所述金属化层包括第一金属，
在管芯载体之上布置所述功率半导体管芯，使得所述金属化层面对所述管芯载体，所述管芯载体至少部分地由包括Ni的镀覆部覆盖，以及
将所述功率半导体管芯扩散焊接到所述管芯载体，由此在所述功率半导体管芯和所述镀覆部之间形成第一金属间化合物，其中，所述第一金属间化合物包括Ni3Sn4。
13.根据权利要求12所述的方法，其中，所述扩散焊接包括：
用2N/mm2或更大的压力将所述功率半导体管芯压到所述管芯载体上。
14.根据权利要求12或权利要求13所述的方法，其中，所述扩散焊接包括：
施加250℃或更高的热量。
15.根据权利要求12至14中任一项所述的方法，还包括：
在所述功率半导体管芯之上沉积Ag层，以及
在所述扩散焊接期间形成包括第二金属间化合物的沉淀物，其中，所述第二金属间化合物包括Ag3Sn。
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