JP2021150520A - Substrate attaching adhesive tape and base material for adhesive tapes - Google Patents

Abstract

To provide a substrate attaching adhesive tape which is capable of accurately suppressing or preventing generation of static electricity in a component obtained by cutting a substrate and in which generation of base material chips resulting from fusing and extending a base material that the substrate attaching adhesive tape comprises caused by frictional heat by a cutting device is accurately suppressed or prevented in the base material, and the base material for adhesive tapes to be used for obtaining the substrate attaching adhesive tapes.SOLUTION: A substrate attaching adhesive tape 100 comprises a base material 4 containing an antistatic agent, and an adhesive layer 2 laminated on the base material 4. The base material 4 includes: a third region 43 and a first region 41 at the side a cutting device enters; and a second region 42 which is positioned at an opposite side of the adhesive layer 2 in the first region 41. The third region 43, the first region 41 and the second region 42 are laminated successively and a content A of the antistatic agent in the first region 41, a content B of the antistatic agent in the second region 42 and a content C of the antistatic agent in the third region 43 satisfy a relation of A<C≤B.SELECTED DRAWING: Figure 3

Description

The present invention relates to an adhesive tape for attaching a substrate and a base material for an adhesive tape.

In response to the recent increase in the functionality of electronic devices and the expansion into mobile applications, the demand for higher density and higher integration of semiconductor devices is increasing, and the capacity and density of IC packages are increasing.

As a method for manufacturing these semiconductor devices, first, an adhesive tape for attaching a substrate is attached to a semiconductor substrate (semiconductor wafer) as a substrate, and a dicing saw as a cutting device is used while fixing the periphery of the semiconductor substrate with a wafer ring. In the dicing process used, the semiconductor substrate is cut and separated (individualized) into individual semiconductor elements (components). Next, after an expanding step of forming a gap between adjacent semiconductor elements (semiconductor chips) by radially stretching the adhesive tape for attaching the substrate using wafer ring, the separated semiconductor elements are separated. A pickup process is performed in which the needle is pushed up and picked up. Next, the picked-up semiconductor element is transferred to a mounting process for mounting on a metal lead frame or a substrate (for example, a tape substrate, an organic hard substrate, etc.). The picked-up semiconductor element is adhered to a lead frame or a substrate via, for example, an underfill material in the mounting process, and then the semiconductor element is sealed on the lead frame or the substrate by a sealing portion to form a semiconductor device. Manufactured.

In recent years, various studies have been made on adhesive tapes for attaching substrates used in the manufacture of such semiconductor devices (see, for example, Patent Document 1).

This adhesive tape for attaching a substrate generally has a base material (film base material) and an adhesive layer formed on the base material, and the semiconductor substrate is fixed by the adhesive layer. Further, the adhesive layer is usually composed of a resin composition containing an adhesive base resin, a photocurable resin, and the like so that the semiconductor chip can be easily picked up after the dicing process of the semiconductor substrate. .. That is, when energy is applied to the adhesive layer after the dicing step, the resin composition is cured and the adhesiveness of the adhesive layer is lowered, so that the semiconductor element can be easily picked up. Further, this adhesive tape for attaching a substrate is used when cutting the semiconductor substrate in the thickness direction using a dicing saw so that the semiconductor substrate is surely cut and separated in the dicing step in the manufacturing method of the semiconductor device. It is carried out so as to reach the middle of the thickness direction of the material.

Here, when the adhesive tape for attaching the substrate is attached to the semiconductor substrate in the above-mentioned dicing process, when the semiconductor substrate is cut using the dicing saw, and when the semiconductor element is picked up in the pickup process, the semiconductor element is used. There is a problem that static electricity is generated, and the semiconductor element is damaged due to the discharge of the static electricity in the semiconductor element, and the characteristics of the semiconductor element are deteriorated.

Japanese Unexamined Patent Publication No. 2009-245989

For the purpose of solving such a problem, it is conceivable that the base material provided in the adhesive tape for attaching the substrate contains an antistatic agent. As described above, it is considered that the generation of static electricity in the semiconducting element obtained by individualizing the semiconductor substrate can be accurately suppressed or prevented by containing the antistatic agent in the base material.

However, if the base material contains an antistatic agent in this way, the dicing saw is used as the base material when the semiconductor substrate is cut in the thickness direction using the dicing saw in the dicing step. It has been found by the study of the present inventor that a new problem arises in which the base material is melted and stretched due to the frictional heat generated by dicing due to reaching the middle of the thickness direction.

Further, such a problem is not limited to the case where a semiconductor element is obtained by fragmenting a semiconductor substrate (wafer for semiconductor) as a substrate, such as a glass substrate, a ceramic substrate, a resin material substrate, and a metal material substrate. The same occurs when various parts are obtained by separating various substrates into individual pieces.

Therefore, according to the present invention, it is possible to accurately suppress or prevent the generation of static electricity in the parts obtained by cutting the substrate, and the frictional heat generated by the cutting device is applied to the base material of the adhesive tape for attaching the substrate. To provide an adhesive tape for attaching a substrate in which the generation of base material waste obtained by melting and stretching the substrate is accurately suppressed or prevented, and a base material for an adhesive tape used for obtaining the adhesive tape for attaching the substrate. be.

Such an object is achieved by the present invention described in the following (1) to (16).
(1) A substrate and an adhesive layer laminated on one surface of the substrate are provided, and the substrate is fixed on the adhesive layer from the substrate to the middle of the thickness direction of the substrate. An adhesive tape for attaching a substrate, which is used when the substrate is individualized by cutting with a cutting device so as to reach the substrate.
The base material contains a polyolefin resin and an antistatic agent, and the third region and the first region on the side where the cutting device penetrates at the time of individualization and the adhesive layer in the first region are It has a second region located on the opposite side, and the third region, the first region, and the second region are laminated in this order.
The content of the antistatic agent in the first region is A [% by weight], the content of the antistatic agent in the second region is B [% by weight], and the content of the antistatic agent in the third region is An adhesive tape for attaching a substrate, which satisfies the relationship of A <C ≦ B when the content is C [% by weight].

(2) The surface resistivity on the one surface side in the first region is L [Ω / □], and the surface resistivity on the one surface side in the second region is M [Ω / □]. The adhesive tape for attaching a substrate according to (1) above, which satisfies the relationship of L> N ≧ M when the surface resistivity on one surface side in the third region is N [Ω / □].

(3) The adhesive tape for attaching a substrate according to (1) or (2) above, wherein the surface resistivity N on one surface side in the third region is 1.0 × 10 ^{12 (Ω / □) or less.} ..

(4) The substrate attachment according to any one of (1) to (3) above, wherein the surface resistivity L on one surface side in the first region is more than 1.0 × 10 ^{12 (Ω / □).} Adhesive tape for.

(5) The substrate attachment according to any one of (1) to (4) above, wherein the surface resistivity M on one surface side in the second region is 1.0 × 10 ^{12 (Ω / □) or less.} Adhesive tape for.

(6) The antistatic agent is any one of (1) to (5) above, which is at least one of a conductive polymer, a permanent antistatic polymer (IDP), a metal oxide material, and carbon black. The described adhesive tape for attaching to a substrate.

(7) The adhesive tape for attaching a substrate according to any one of (1) to (6) above, wherein the polyolefin resin is at least one of polypropylene, polyethylene, and a polyethylene copolymer.

(8) The adhesive tape for attaching a substrate according to any one of (1) to (7) above, wherein the adhesive layer contains an adhesive base resin.

(9) The adhesive tape for attaching a substrate according to (8) above, wherein the base resin is an acrylic resin.

(10) The adhesive layer further contains a curable resin that is cured by applying energy, and the application of energy reduces the adhesive force to the substrate laminated on the adhesive layer (1). The adhesive tape for attaching the substrate according to 8) or (9).

(11) The adhesive tape for attaching a substrate according to any one of (1) to (10) above, wherein the substrate is laminated on the adhesive layer.

(12) the substrate sticking adhesive tape width 20 mm, and affixed to the sections below the silicon wafer 6 inches 4 inches or more in length, and left 3 hr, then, ultraviolet illuminance: 55W / cm ^2, the amount of UV irradiation: After irradiating the adhesive layer with ultraviolet rays under the condition of 200 mj / cm ² , one end of the adhesive tape for attaching the substrate is held, and the speed is 300 mm / min in the direction of 180 ° under the conditions of a temperature of 24 ° C. and a humidity of 40% Rh. The adhesive tape for attaching a substrate according to any one of (1) to (11) above, wherein the peak potential measured in the silicon wafer when peeled off is 40 V or less.

(13) The adhesive tape for attaching a substrate according to any one of (1) to (12) above, wherein the base material has a thickness of 5 μm or more and 100 μm or less in the third region.

(14) The adhesive tape for attaching a substrate according to any one of (1) to (13) above, wherein the base material has a thickness of 3 μm or more and 100 μm or less in the first region.

(15) The adhesive tape for attaching a substrate according to any one of (1) to (14) above, wherein the base material has a thickness of 5 μm or more and 100 μm or less in the second region.

(16) A base material for adhesive tape,
A base material for an adhesive tape and an adhesive layer laminated on one surface of the base material for the adhesive tape are provided, and the base material for the adhesive tape is attached to the base material for the adhesive tape in a state where the substrate is fixed on the adhesive layer. By cutting with a cutting device so that it reaches halfway in the thickness direction of the above, it is applied to the adhesive tape for attaching the substrate used when the substrate is individualized.
It contains a polyolefin resin and an antistatic agent, and is located on the side opposite to the adhesive layer of the first region and the third region and the first region on the side where the cutting device penetrates at the time of individualization. It has a second region, and the third region, the first region, and the second region are laminated in this order.
The content of the antistatic agent in the first region is A [% by weight], the content of the antistatic agent in the second region is B [% by weight], and the content of the antistatic agent in the third region is A base material for an adhesive tape, which satisfies the relationship of A <C ≦ B when the content is C [% by weight].

According to the present invention, when the substrate is fragmented, the third region and the first region on the side where the cutting device penetrates and the second region located on the side opposite to the adhesive layer of the first region are separated. An adhesive tape for attaching a substrate is used in which the third region, the first region, and the second region are laminated in this order, and the adhesive tape for attaching the substrate contains an antistatic agent in the first region. The relationship between the amount A [% by weight], the content B [% by weight] of the antistatic agent in the second region, and the content C [% by weight] of the antistatic agent in the third region is A <C ≦ B. Are satisfied.

Therefore, for example, when the present invention is applied to a semiconductor wafer, which is one of the substrates, the semiconductor wafer is cut by using a dicing saw as a cutting device in a wafer attaching step of attaching an adhesive tape for attaching a substrate to the semiconductor wafer. Therefore, in the dicing step of obtaining the fragmented semiconductor element, the pick-up step of picking up the fragmented semiconductor element, and the like, it is possible to accurately suppress or prevent the generation of static electricity in the semiconductor element. Therefore, it is possible to accurately suppress or prevent, for example, damage to the semiconductor element due to the discharge of static electricity, resulting in deterioration of the characteristics of the semiconductor element.

Further, in the dicing step, when a semiconductor wafer is cut in the thickness direction using a dicing saw, even if the dicing saw reaches halfway in the thickness direction of the base material, friction due to dicing It is possible to accurately suppress or prevent the generation of base material waste obtained by melting and stretching the base material in the base material due to heat.

It is a vertical cross-sectional view which shows an example of the semiconductor device manufactured by using the adhesive tape for sticking a substrate of this invention. It is a vertical cross-sectional view for demonstrating the method of manufacturing the semiconductor device shown in FIG. 1 by using the adhesive tape for sticking a substrate of this invention. It is a vertical cross-sectional view which shows the embodiment of the adhesive tape for sticking a substrate of this invention. It is a vertical cross-sectional view for demonstrating the method of manufacturing the adhesive tape for sticking a substrate shown in FIG.

Hereinafter, the adhesive tape for attaching the substrate of the present invention will be described in detail.
First, prior to explaining the adhesive tape for attaching a substrate of the present invention, a semiconductor device manufactured by using the adhesive tape for attaching a substrate of the present invention will be described.

<Semiconductor device>
FIG. 1 is a vertical cross-sectional view showing an example of a semiconductor device manufactured by using the adhesive tape for attaching a substrate of the present invention. In the following description, the upper side in FIG. 1 is referred to as "upper" and the lower side is referred to as "lower".

The semiconductor device 10 shown in FIG. 1 is a QFP (Quad Flat Package) type semiconductor package, and includes a semiconductor chip (semiconductor element) 20, a die pad 30 that supports the semiconductor chip 20 via an adhesive layer 60, and a semiconductor chip 20. It has a lead 40 electrically connected to the semiconductor chip 20 and a mold portion (sealing portion) 50 for sealing the semiconductor chip 20.

The die pad 30 is made of a metal substrate and has a function as a support for supporting the semiconductor chip 20.

The die pad 30 is a metal substrate made of various metal materials such as Cu, Fe, Ni and alloys thereof (for example, Cu-based alloy and iron / nickel-based alloy such as Fe-42Ni), and the die pad 30. The surface of the metal substrate is silver-plated or Ni-Pd-plated, and the surface of the Ni-Pd-plated surface is provided with a gold-plated (gold flash) layer provided to improve the stability of the Pd layer. Etc. are used.

Further, the plan view shape of the die pad 30 usually corresponds to the plan view shape of the semiconductor chip 20, and is, for example, a quadrangle such as a square or a rectangle.

A plurality of leads 40 are radially provided on the outer peripheral portion of the die pad 30.
The end of the lead 40 on the opposite side of the die pad 30 protrudes (exposed) from the mold portion 50.

The lead 40 is made of a conductive material, and for example, the same material as that of the die pad 30 described above can be used.

Further, the surface of the lead 40 may be tin-plated or the like. As a result, when the semiconductor device 10 is connected to the terminals provided on the motherboard via solder, the adhesion between the solder and the leads 40 can be improved.

The semiconductor chip 20 is fixed (fixed) to the die pad 30 via the adhesive layer 60.

The adhesive layer 60 is not particularly limited, but is formed by using various adhesives such as an epoxy adhesive, an acrylic adhesive, a polyimide adhesive, and a cyanate adhesive. Further, the adhesive layer 60 may contain metal particles such as silver powder and copper powder. As a result, the thermal conductivity of the adhesive layer 60 is improved, so that heat is efficiently transferred from the semiconductor chip 20 to the die pad 30 via the adhesive layer 60, so that the heat dissipation property when the semiconductor chip 20 is driven is improved. ..

Further, the semiconductor chip 20 has an electrode pad 21, and the electrode pad 21 and the lead 40 are electrically connected by a wire 22. As a result, the semiconductor chip 20 and each lead 40 are electrically connected.

The material of the wire 22 is not particularly limited, but the wire 22 can be made of, for example, Au wire or Al wire.

The die pad 30, each member provided on the upper surface side of the die pad 30, and the inner portion of the lead 40 are sealed by the mold portion 50. As a result, the outer end of the lead 40 projects from the mold portion 50, which is made of a cured product of the semiconductor encapsulant material.

The semiconductor device 10 having such a configuration is manufactured, for example, by using the adhesive tape for attaching a substrate of the present invention as follows.

<Manufacturing method of semiconductor devices>
FIG. 2 is a vertical cross-sectional view for explaining a method of manufacturing the semiconductor device shown in FIG. 1 using the adhesive tape for attaching a substrate of the present invention. In the following description, the upper side in FIG. 2 is referred to as "upper" and the lower side is referred to as "lower".

[1A] First, an adhesive tape 100 for attaching a substrate (hereinafter referred to as an adhesive tape 100) having a base material 4 having a first region 41 and a second region 42 and an adhesive layer 2 laminated on the upper surface (one surface) of the base material 4. , It may be simply referred to as “adhesive tape 100”) (see FIG. 2 (a)).

The adhesive tape 100 is composed of the adhesive tape for attaching the substrate of the present invention, and a detailed description thereof will be given later.

[2A] Next, as shown in FIG. 2B, the adhesive tape 100 is placed on a dicer table (not shown), and the surface of the semiconductor wafer 7 on the central portion 122 of the semiconductor wafer 7 on the side without the semiconductor element is arranged. It is placed on the adhesive layer 2 and lightly pressed to laminate (paste) the semiconductor wafer 7 (pasting step).

The semiconductor wafer 7 may be attached to the adhesive tape 100 in advance and then installed on the dicer table.

Further, in the present embodiment, a large semiconductor wafer 7 such as 12 inches is laminated on the adhesive tape 100.

[3A] Next, the outer peripheral portion 121 of the adhesive layer 2 is fixed by the wafer ring 9, and then the semiconductor wafer 7 is cut (diced) in the thickness direction using a dicing saw (blade) (not shown). The semiconductor wafer 7 is fragmented (dicing step; see FIG. 2C).

At this time, the adhesive tape 100 has a buffering action, and prevents cracks, chips, etc. when cutting the semiconductor wafer 7.

Further, as shown in FIG. 2C, the cutting of the semiconductor wafer 7 using the blade is carried out so as to reach the middle of the base material 4 in the thickness direction, whereby the semiconductor wafer pieces are individually cut. It is possible to surely carry out the conversion. Further, in the present invention, at the time of this individualization, the blade penetrates into the third region 43 and the first region 41 located on the adhesive layer 2 side of the base material 4, and the side opposite to the adhesive layer 2 The second region 42 located in the above is configured so that the blade does not invade, but a detailed description thereof will be given later.

In this step [3A], the semiconductor wafer 7 was cut in the thickness direction using a dicing saw (blade), but instead of the dicing saw, a laser, shear cut, or the like was used. It can also be carried out. That is, as a cutting device, a laser, a shear cut, or the like can be used in addition to the dicing saw (blade).

[4A] Next, by applying energy to the adhesive layer 2 included in the adhesive tape 100, the adhesiveness of the adhesive layer 2 to the semiconductor wafer 7 is lowered.
As a result, the adhesive layer 2 and the semiconductor wafer 7 are separated from each other.

The method of imparting energy to the adhesive layer 2 is not particularly limited, and examples thereof include a method of irradiating the adhesive layer 2 with energy rays, a method of heating the adhesive layer 2, and the like. Among them, energy is applied to the adhesive layer 2. It is preferable to use a method of irradiating the wire from the base material 4 side of the adhesive tape 100.

Such a method is preferably used as a method for applying energy because the semiconductor chip 20 does not need to undergo an unnecessary thermal history and energy can be applied to the adhesive layer 2 relatively easily and efficiently. Be done.

Further, examples of the energy beam include ultraviolet rays, electron beams, particle beams such as ion beams, and those in which two or more types of these energy rays are combined. Among these, it is particularly preferable to use ultraviolet rays. According to ultraviolet rays, the adhesiveness of the adhesive layer 2 to the semiconductor wafer 7 can be efficiently reduced.

[5A] Next, the adhesive tape 100 is radially stretched by an expanding device (not shown), and the individualized semiconductor wafers 7 (semiconductor chips 20) are opened at regular intervals (see FIG. 2D), and then. The semiconductor chip 20 is pushed up using a needle or the like, and in this state, the semiconductor chip 20 is picked up by suction with a vacuum collet or air tweezers (pickup step; see FIG. 2 (e)).

[6A] Next, the picked up semiconductor chip 20 is mounted on the die pad 30 via the adhesive layer 60, and then the electrode pad 21 and the lead 40 included in the semiconductor chip 20 are wire-bonded to each other to be electrically connected by the wire 22. Connect to.

[7A] Next, the semiconductor chip 20 is sealed with the mold portion 50.
For sealing by the mold portion 50, for example, a molding mold having an internal space corresponding to the shape of the mold portion 50 to be formed is prepared, and a powder is formed so as to surround the semiconductor chip 20 arranged in the internal space. The internal space is filled with a semiconductor encapsulating material. Then, in this state, the semiconductor encapsulating material is cured by heating to obtain a cured product of the semiconductor encapsulating material.

The semiconductor device 10 can be obtained by the method for manufacturing a semiconductor device having the above steps. Hereinafter, the substrate sticking adhesive tape 100 (the substrate sticking adhesive tape of the present invention) used in the semiconductor device manufacturing method will be described. do.

<Adhesive tape for attaching the board>
FIG. 3 is a vertical cross-sectional view showing an embodiment of the adhesive tape for attaching a substrate of the present invention. In the following description, the upper side in FIG. 3 is referred to as "upper" and the lower side is referred to as "lower".

The adhesive tape 100 (adhesive tape for attaching a substrate of the present invention) includes a base material 4 and an adhesive layer 2 laminated on the upper surface (one surface) of the base material 4, and in the present embodiment, the adhesive layer 2 is provided. The semiconductor wafer 7 is individualized by cutting the semiconductor wafer 7 with a blade so as to reach the middle of the thickness direction of the base material 4 from the semiconductor wafer 7 in a fixed state. The base material 4 contains a polyolefin resin and an antistatic agent, and is used by being temporarily fixed to the wafer 7 for semiconductors. It has 43 and a first region 41, and a second region 42 located on the opposite side of the third region 43 from the adhesive layer 2 and in contact with the first region 41, and has a third region 43, a first region 41, and a first region. The two regions 42 are laminated in this order, the content of the antistatic agent in the first region 41 is A [% by weight], and the content of the antistatic agent in the second region 42 is B [% by weight]. When the content of the antistatic agent in the third region 43 is C [% by weight], the relationship of A <C ≦ B is satisfied.

As described above, the content A [% by weight] of the antistatic agent in the first region 41, the content B [% by weight] of the antistatic agent in the second region 42, and the content of the antistatic agent in the third region 43. By satisfying the relationship that the amount C [% by weight] is A <C ≦ B, the semiconductor chip 20 is subjected to the pasting step [2A], the dicing step [3A], the pick-up step [5A], and the like. It is possible to accurately suppress or prevent the generation of static electricity. Therefore, it is possible to accurately suppress or prevent the semiconductor chip from being damaged due to the discharge of static electricity, resulting in deterioration of the characteristics of the semiconductor chip 20 and further damage to the semiconductor chip 20. can.

By repeating the steps [5A] to [7A], a plurality of semiconductor devices 10 can be obtained from one semiconductor wafer 7, but can be obtained by cutting the semiconductor wafer 7. With some of the plurality of semiconductor chips 20 remaining on the adhesive tape 100, the repetition of the steps [5A] to [7A] is temporarily stopped, and after this stop, the steps [5A] are restarted. ] -The step [7A] may be repeated. At this time, if the stop time is long, for example, one day or more, the adhesive tape 100 to which the semiconductor chip 20 is attached may be removed (peeled) from the dicer table. Even when the semiconductor chip 20 is removed from the table, it is possible to accurately suppress or prevent the generation of static electricity on the semiconductor chip 20.

Further, in the dicing step [3A], when the semiconductor wafer 7 is cut in the thickness direction of the semiconductor wafer 7 using the blade, the blade may reach halfway in the thickness direction of the base material 4. In order to satisfy the relationship of A <C ≦ B, it is possible to accurately suppress or prevent the generation of base material waste obtained by melting and stretching the base material 4 in the base material 4 due to frictional heat due to dicing.

Hereinafter, the base material 4 and the adhesive layer 2 included in the adhesive tape 100 (dicing tape) will be described in detail.

The adhesive tape 100 has a function of reducing the adhesiveness of the adhesive layer 2 to the semiconductor wafer 7 by applying energy to the adhesive layer 2 provided by the adhesive tape 100.

Examples of such a method of applying energy to the adhesive layer 2 include a method of irradiating the adhesive layer 2 with energy rays and a method of heating the adhesive layer 2. Among them, the semiconductor chip 20 has an unnecessary thermal history. Since it is not necessary to pass through, a method of irradiating the adhesive layer 2 with energy rays is preferably used. Therefore, in the following, as the adhesive layer 2, a layer whose adhesiveness is lowered by irradiation with energy rays will be described as a representative.

<Base material 4>
The base material 4 contains a polyolefin-based resin and an antistatic agent, and has a function of supporting the adhesive layer 2 provided on the base material 4.

The polyolefin-based resin is not particularly limited, and for example, low-density polyethylene, linear polyethylene, medium-density polyethylene, high-density polyethylene, polyethylene such as ultra-low-density polyethylene, random copolymer polypropylene, block copolymer polypropylene, and homo. In addition to polypropylene such as polyprolene, polyvinyl chloride, polybutene, polybutadiene, polymethylpentene, etc., ethylene-vinyl acetate copolymer, zinc ion crosslinked product, ionomer such as sodium ion crosslinked product, ethylene- (meth) acrylic Olefin such as acid copolymers, ethylene- (meth) acrylic acid ester (random, alternating) copolymers, ethylene-propylene copolymers, ethylene-butene copolymers, ethylene-hexene copolymers and other polyethylene copolymers. Examples thereof include a system copolymer and the like, and one or two or more of these can be used in combination, and among them, at least one of polypropylene, polyethylene and a polyethylene copolymer is preferable.

Among the polyolefin-based resins, these are materials having excellent transparency of energy rays such as light (visible light, near infrared rays, ultraviolet rays), X-rays, and electron beams. It can be preferably used when an energy ray is transmitted from the base material 4 side through the base material 4 to irradiate the adhesive layer 2.

Further, the base material 4 contains the above-mentioned polyolefin resin as a main material, and the base material 4 further contains an antistatic agent dispersed in the polyolefin resin. This antistatic agent is composed of a conductive material having conductivity. As described above, by containing the conductive material as an antistatic agent in the base material 4, the semiconductor wafer 7 and the semiconductor wafer 7 in the pasting step [2A], the dicing step [3A], and the pick-up step [5A] The generation of static electricity in the semiconductor chip 20 can be accurately suppressed or prevented.

The antistatic agent, that is, the conductive material is not particularly limited as long as it has conductivity, but for example, a conductive polymer, a surfactant, a permanent antistatic polymer (IDP), a metal material, and metal oxidation. Examples include physical materials and carbon-based materials, and one or a combination of two or more of these can be used.

Among these, the conductive polymer includes, for example, polythiophene, polyaniline, polypyrrole, polyacetylene, PEDOT (poly-ethylenedioxythiophene), PEDOT / PSS, poly (p-phenylene), polyfluorene, polycarbazole, polysilane, or derivatives thereof. , And one or a combination of two or more of these can be used.

Examples of polythiophene or its derivative include polythiophene, poly (3,4) -ethylenedioxythiophene, and poly (3-thiophene-β-ethanesulfonic acid).

Examples of polyaniline or its derivative include polyaniline, polymethylaniline, polymethoxyaniline and the like.

Further, examples of polypyrrole or a derivative thereof include polypyrrole, poly3-methylpyrrole, poly3-octylpyrrole and the like.

In addition, examples of the surfactant include anionic surfactants, cationic surfactants, nonionic surfactants, amphoteric surfactants and the like.

As the permanent antistatic polymer (IDP), for example, all IDPs such as polyester amide type, polyether ester polyolefin type, polyether ester amide type, and polyurethane type can be used.

Further, examples of the metal material include gold, silver, copper or silver-coated copper, nickel and the like, and these metal powders are preferably used.

Examples of the metal oxide material include indium tin oxide (ITO), indium oxide (IO), antimontine oxide (ATO), indium zinc oxide (IZO), tin oxide (SnO ₂ ), and the like. Powder is preferably used.

Examples of carbon-based materials include carbon black, single-walled carbon nanotubes, carbon nanotubes such as multi-walled carbon nanotubes, carbon nanofibers, CN nanotubes, CN nanofibers, BCN nanotubes, BCN nanofibers, and graphene.

Among these, the conductive material is preferably at least one of a conductive polymer, a permanent antistatic polymer (IDP), a metal oxide material, and carbon black. Since these materials have a small temperature dependence of resistivity, the resistance value changes even if the base material 4 is heated when dicing the semiconductor wafer 7 in the step [3A]. The amount can be reduced.

Further, the base material 4 includes a softening agent such as mineral oil, a filler such as calcium carbonate, silica, talc, mica, and clay, an antioxidant, a light stabilizer, a lubricant, a dispersant, a neutralizing agent, a coloring agent, and the like. May be contained.

In the present invention, the base material 4 containing the polyolefin resin and the antistatic agent as described above has a different content of the antistatic agent in the thickness direction, so that the adhesive layer 2 is laminated from the side. , The third region 43, the first region 41, and the second region 42 are laminated in this order, and are composed of a laminated body having a plurality of layers. Then, the content of the antistatic agent in the first region 41 is A [% by weight], the content of the antistatic agent in the second region 42 is B [% by weight], and the content of the antistatic agent in the third region 43 is set. When the amount is C [% by weight], the relationship A <C ≦ B is satisfied, and the blade penetrates into the third region 43 and the first region 41, and the blade penetrates into the second region 42. It is configured not to.

At this time, the blade is configured to invade the first region 41 after passing through the third region 43 and stop in the middle of the invasion.

As described above, while satisfying the relationship of A <C ≦ B, the base material 4 contains the antistatic agent, so that the pasting step [2A], the dicing step [3A], and the pick-up step [5A] are satisfied. ], Etc., it is possible to accurately suppress or prevent the generation of static electricity in the semiconductor chip 20. Therefore, it is possible to accurately suppress or prevent the semiconductor chip from being damaged due to the discharge of static electricity, resulting in deterioration of the characteristics of the semiconductor chip 20 and further damage to the semiconductor chip 20. can. In particular, in the present invention, the third region 43 having an antistatic agent content relationship of A <C is located proximal to the first region 41 with respect to the adhesive layer 2 (semiconductor wafer 7). Have been placed. Therefore, the effect can be exerted more remarkably.

Even if the characteristics of the semiconductor chip 20 are not deteriorated due to the discharge of static electricity, the semiconductor chip 20 caused by static electricity is intended to improve the reliability of the semiconductor device 10. When the charge amount exceeds the set threshold value, it is conceivable that the semiconductor chip 20 is not used after the step [5A] at the discretion of the manufacturer. Even in this case, the semiconductor chip 20 can be accurately suppressed or prevented from being charged above the threshold value by containing the antistatic agent while satisfying the relationship of A <C ≦ B. ..

Further, in the dicing step [3A], when the semiconductor wafer 7 is cut in the thickness direction of the semiconductor wafer 7 by using the blade, the blade reaches the middle of the thickness direction of the base material 4. The blade passes through the third region 43 and stops in the middle of the first region 41 that satisfies the relationship A <C ≦ B. Therefore, it is possible to accurately suppress or prevent the generation of base material waste in which the first region 41, that is, the base material 4 is melted and elongated, is generated in the first region 41 due to the frictional heat generated by dicing.

Here, if the content C [% by weight] of the antistatic agent in the third region 43 and the content B [% by weight] of the antistatic agent in the second region 42 satisfy the relationship of C ≦ B. It is good, but it is preferable to satisfy the relationship of 2C <B, and it is more preferable to satisfy the relationship of 3C <B. Further, the content A [% by weight] of the antistatic agent in the first region 41 and the content C [% by weight] of the antistatic agent in the third region 43 may satisfy the relationship A <C. However, it is preferable that the relationship of 2A <C is satisfied, and it is more preferable that the relationship of 3A <C is satisfied. By satisfying these, the above-mentioned effect can be exerted more remarkably.

The content A of the antistatic agent in the first region 41 is, specifically, slightly different depending on the type of the antistatic agent, but is preferably 0% by weight or more and 20% by weight or less, preferably 0% by weight. More preferably, it is 8% by weight or less. The content of the antistatic agent in the second region 42 is slightly different depending on the type of the antistatic agent, but is preferably 5% by weight or more and 40% by weight or less, and 10% by weight or more and 30% by weight or less. More preferably. Further, the content of the antistatic agent in the third region 43 is slightly different depending on the type of the antistatic agent, but is preferably 5% by weight or more and 40% by weight or less, and 10% by weight or more and 30% by weight or less. More preferably. By setting the content A, the content B, and the content C within the above range while satisfying the relationship of A <C ≦ B, the effect can be exhibited more remarkably.

The content A of the antistatic agent in the first region 41, the content B of the antistatic agent in the second region 42, and the content C of the antistatic agent in the third region 43 are set as described above. Therefore, the surface resistivity on the upper surface (one surface) side in the first region 41 is L [Ω / □], the surface resistivity on the upper surface side in the second region 42 is M [Ω / □], and the third When the surface resistivity on the upper surface side in the region 43 is N [Ω / □], it is preferable to satisfy the relationship of L> N ≧ M, and it is preferable to satisfy the relationship of L> 10000N and N> 10000M.

Further, the surface resistivity L on the upper surface (one surface) side in the first region 41 is specifically ^{preferably more than 1.0 × 10 12} (Ω / □), and 1.0 × 10 ¹³ It is more preferable that it is (Ω / □) or more and 1.0 × 10 ¹⁶ (Ω / □) or less. Further, the surface resistivity M on the upper surface side in the second region 42 ^{is preferably 1.0 × 10 12} (Ω / □) or less, and 1.0 × 10 ⁷ (Ω / □) or more and 1.0 × It is more preferably 10 ¹⁰ (Ω / □) or less. Further, the surface resistivity N on the upper surface side in the third region 43 ^{is preferably 1.0 × 10 12} (Ω / □) or less, and 1.0 × 10 ⁸ (Ω / □) or more and 1.0 × It is more preferably 10 ¹¹ (Ω / □) or less. By setting the surface resistivityes L, M, and N within the above ranges while satisfying the relationship of L> N ≧ M, the pasting step [2A], the dicing step [3A], and the pickup In the step [5A] or the like, it is possible to more accurately suppress or prevent the generation of static electricity in the semiconductor chip 20.

Further, the volume resistivity of the base material 4 as a whole is preferably 1.0 × 10 ¹⁰ (Ω · m) or more and 1.0 × 10 ¹⁷ (Ω · m) or less, preferably 1.0 × 10 ¹¹ (Ω · m) or less. It is more preferable that it is Ω · m) or more and 1.0 × 10 ¹⁶ (Ω · m) or less. Thereby, it is possible to more accurately suppress or prevent the generation of static electricity in the semiconductor chip 20 in the pasting step [2A], the dicing step [3A], the pick-up step [5A], and the like. Therefore, it is more accurately suppressed or prevented that the semiconductor chip 20 is damaged due to the discharge of static electricity, and as a result, the characteristics of the semiconductor chip 20 are deteriorated and the semiconductor chip 20 is damaged. be able to.

In particular, in the present embodiment, a large semiconductor wafer 7 such as 12 inches is laminated on the adhesive tape 100, and the semiconductor wafer 7 is used for a longer time in the dicing step [3A]. Although it will be cut, by setting the surface resistivity of the first region 41 and the second region 42 of the base material 4 and the volume resistivity of the base material 4 as described above, such a large size can be obtained. Also in the semiconductor wafer 7 of the above, deterioration of the characteristics of the semiconductor chip 20 and further damage of the semiconductor chip 20 are accurately suppressed or prevented.

Further, the adhesive layer 2 is deteriorated in adhesiveness by irradiating the adhesive layer with energy rays, but is on the upper surface (one surface) side of the first region 41 and the second region 42 of the base material 4 described above. The surface resistivity and the volume resistivity of the base material 4 may be set within the above ranges before and after the irradiation of the energy rays to the adhesive layer 2, respectively, but the irradiation It is preferable that it is set within the above range even afterwards, that is, it is set within the above range before and after the irradiation of the energy ray. The generation of static electricity in the semiconductor chip 20 tends to be more prominent when the semiconductor chip 20 is picked up from the adhesive tape 100 in the pickup step [5A]. By setting the surface resistivity on the upper surface (one surface) side of the region 41 and the second region 42 and the volume resistivity of the base material 4 within the above range, the semiconductor chip 20 can be picked up when the semiconductor chip 20 is picked up. It is possible to accurately suppress or prevent the generation of static electricity.

The degree of generation of static electricity in the semiconductor chip 20 (semiconductor wafer 7) after irradiation with such energy rays is preferably suppressed to the extent shown below, for example.

That is, an adhesive tape 100 having a width 20 mm, and affixed to the sections below the silicon wafer 6 inches 4 inches or more in length, and left 3 hr, then, ultraviolet illuminance: 55W / cm ^2, the amount of ultraviolet irradiation: 200 mj / cm ² After irradiating the adhesive layer 2 with ultraviolet rays under the conditions of The peak potential measured on the silicon wafer is preferably 40 V or less, more preferably 20 V or less.

When a polymer material such as a conductive polymer or a permanent antistatic polymer (IDP) is used as the antistatic agent, the antistatic agent contained in the first region 41 and the second region 42 of the base material 4 By adjusting the content of the base material 4, the surface resistivity on the upper surface side of the first region 41 and the second region 42 of the base material 4 and the magnitude of the volume resistivity of the base material 4 are set as described above, respectively. However, the present invention is not limited to this, and the above setting can also be made by adjusting the degree of orientation of the antistatic agent in the base material 4, that is, in the first region 41 and the second region 42. In other words, by appropriately adjusting the draw ratio of MD or TD when forming the base material 4 (first region 41 and second region 42), the first region 41 and the second region 42 of the base material 4 can be adjusted. The magnitudes of the surface resistivity on the upper surface side and the volume resistivity of the base material 4 can be set as described above.

The thickness of the base material 4 is not particularly limited, but for example, the thickness in the first region 41 is preferably 10 μm or more and 100 μm or less, and more preferably 20 μm or more and 90 μm or less. When the thickness of the first region 41 is within this range, dicing of the semiconductor wafer 7 in the step [3A] can be performed with excellent workability. Therefore, in the step [3A], it is possible to more accurately suppress or prevent the generation of base material waste in which the first region 41 is melted and elongated.

Further, the thickness of the second region 42 is preferably 10 μm or more and 100 μm or less, and more preferably 20 μm or more and 90 μm or less. As a result, the function as the second region 42 can be more reliably exhibited, so that the semiconductor chip 20 can be used in the pasting step [2A], the dicing step [3A], the pick-up step [5A], and the like. It is possible to more accurately suppress or prevent the generation of static electricity.

Further, the thickness of the third region 43 is preferably 10 μm or more and 100 μm or less, and more preferably 30 μm or more and 70 μm or less. As a result, the function as the third region 43 can be more reliably exhibited, so that the semiconductor chip 20 can be used in the pasting step [2A], the dicing step [3A], the pick-up step [5A], and the like. It is possible to more accurately suppress or prevent the generation of static electricity.

<Adhesive layer>
The adhesive layer 2 has a function of adhering and supporting the semiconductor wafer 7 when dicing the semiconductor wafer 7 in the step [3A]. Further, the adhesive layer 2 is in a state in which the adhesiveness to the semiconductor wafer 7 is lowered by applying energy to the adhesive layer 2, whereby peeling can easily occur between the adhesive layer 2 and the semiconductor wafer 7. Is what becomes.

The adhesive layer 2 having such a function is composed of a resin composition containing (1) a base resin having adhesiveness and (2) a curable resin that cures the adhesive layer 2 as a main material.

Hereinafter, each component contained in the resin composition will be described in detail in order.
(1) Base Resin The base resin (resin having adhesiveness) has adhesiveness, and in order to impart adhesiveness to the semiconductor wafer 7 to the adhesive layer 2 before irradiating the adhesive layer 2 with energy rays. , It is contained in the resin composition.

Examples of such base resins include acrylic resins (adhesives), silicone resins (adhesives), polyester resins (adhesives), polyvinyl acetate resins (adhesives), and polyvinyl ether resins (adhesives). Alternatively, known materials such as urethane-based resin (adhesive) used as a pressure-sensitive adhesive layer component can be mentioned, and among them, acrylic-based resin is preferably used. Acrylic resins are preferably used as base resins because they have excellent heat resistance and can be obtained relatively easily and inexpensively.

Acrylic resin refers to a polymer (homopolymer or copolymer) containing (meth) acrylic acid or (meth) acrylic acid ester as a monomer main component as a base polymer.

The (meth) acrylic acid ester is not particularly limited, and for example, methyl (meth) acrylate, ethyl (meth) acrylate, propyl (meth) acrylate, isopropyl (meth) acrylate, butyl (meth) acrylate. , (Meta) isobutyl acrylate, (meth) s-butyl acrylate, (meth) t-butyl acrylate, (meth) pentyl acrylate, (meth) hexyl acrylate, (meth) heptyl acrylate, (meth) Octyl acrylate, Isooctyl (meth) acrylate, 2-ethylhexyl (meth) acrylate, Nonyl (meth) acrylate, Isononyl (meth) acrylate, Decyl (meth) acrylate, Isodecyl (meth) acrylate, (meth) ) Undecyl acrylate, dodecyl (meth) acrylate, tridecyl (meth) acrylate, tetradecyl (meth) acrylate, pentadecyl (meth) acrylate, hexadecyl (meth) acrylate, heptadecyl (meth) acrylate, (meth) (Meta) acrylic acid alkyl esters such as octadecyl acrylate, (meth) acrylic acid cycloalkyl esters such as (meth) acrylic acid cyclohexyl, (meth) acrylic acid aryl esters such as (meth) phenyl acrylate, etc. These can be mentioned, and one or a combination of two or more of these can be used. Among these, (meth) acrylate alkyl esters such as methyl (meth) acrylate, ethyl (meth) acrylate, butyl (meth) acrylate, 2-ethylhexyl (meth) acrylate, and octyl (meth) acrylate. Is preferable. The (meth) acrylic acid alkyl ester is particularly excellent in heat resistance, and can be obtained relatively easily and inexpensively.

In addition, in this specification, (meth) acrylic acid ester is used in the meaning which includes both acrylic acid ester and methacrylic acid ester.

Further, it is preferable that the glass transition point of this acrylic resin is 20 ° C. or lower. As a result, the adhesive layer 2 can exhibit excellent adhesiveness before irradiating the adhesive layer 2 with energy rays.

As the acrylic resin, a resin containing a copolymerizable monomer is used as a monomer component constituting the polymer, if necessary, for the purpose of modifying the cohesive force, heat resistance and the like.

Such a copolymerizable monomer is not particularly limited, and is, for example, 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, 4-hydroxybutyl (meth) acrylate, (meth). Like hydroxyl group-containing monomers such as 6-hydroxyhexyl acrylate, epoxy group-containing monomers such as glycidyl (meth) acrylate, (meth) acrylic acid, itaconic acid, maleic acid, fumaric acid, crotonic acid, isocrotonic acid. Carboxyl group-containing monomers, acid anhydride group-containing monomers such as maleic anhydride and itaconic anhydride, (meth) acrylamide, N, N-dimethyl (meth) acrylamide, N-butyl (meth) acrylamide, N-methylol ( Amido-based monomers such as meta) acrylamide, N-methylolpropane (meth) acrylamide, N-methoxymethyl (meth) acrylamide, N-butoxymethyl (meth) acrylamide, aminoethyl (meth) acrylate, (meth) acrylic acid Amino group-containing monomers such as N, N-dimethylaminoethyl, t-butylaminoethyl (meth) acrylate, cyano group-containing monomers such as (meth) acrylonitrile, ethylene, propylene, isoprene, butadiene, isobutylene and the like. Olefin-based monomers, styrene, α-methylstyrene, styrene-based monomers such as vinyl toluene, vinyl ester-based monomers such as vinyl acetate and vinyl propionate, vinyl ether-based monomers such as methyl vinyl ether and ethyl vinyl ether, vinyl chloride, chloride Halogen atom-containing monomers such as vinylidene, methoxyethyl (meth) acrylate, alkoxy group-containing monomers such as ethoxyethyl (meth) acrylate, N-vinyl-2-pyrrolidone, N-methylvinylpyrrolidone, N-vinylpyridine , N-vinylpiperidone, N-vinylpyrimidine, N-vinylpiperazin, N-vinylpyrazine, N-vinylpyrrole, N-vinylimidazole, N-vinyloxazole, N-vinylmorpholin, N-vinylcaprolactam, N- (meth) Examples thereof include monomers having a nitrogen atom-containing ring such as acryloylmorpholin, and one or a combination of two or more of these can be used.

Further, the copolymerizable monomer may be contained at the end of the main chain in the polymer constituting the acrylic resin, contained in the main chain, and further, the end of the main chain and the main chain. It may be included in both the inside and the inside.

Further, the copolymerizable monomer may contain a polyfunctional monomer for the purpose of cross-linking between polymers.

Examples of the polyfunctional monomer include 1,6-hexanediol (meth) acrylate, (poly) ethylene glycol di (meth) acrylate, (poly) propylene glycol di (meth) acrylate, and neopentyl glycol di (meth) acrylate. , Pentaerythritol di (meth) acrylate, trimethylolpropantri (meth) acrylate, pentaerythritol tri (meth) acrylate, dipentaerythritol hexa (meth) acrylate, glycerindi (meth) acrylate, epoxy (meth) acrylate, polyester ( Examples thereof include meta) acrylate, urethane (meth) acrylate, divinylbenzene, butyldi (meth) acrylate, and hexyldi (meth) acrylate, and one or more of these can be used in combination.

Further, ethylene-vinyl acetate copolymer, vinyl acetate polymer and the like can also be used as the copolymerizable monomer component.

Such an acrylic resin (polymer) can be produced by polymerizing a single monomer component or a mixture of two or more kinds of monomer components. Further, the polymerization of these monomer components can be carried out by using a polymerization method such as a solution polymerization method, an emulsion polymerization method, a bulk polymerization method, or a suspension polymerization method.

The acrylic resin obtained by polymerizing the monomer components described above includes an acrylic resin having a carbon-carbon double bond in the side chain, in the main chain, or at the end of the main chain (“double”. It may also be referred to as "bond-introduced acrylic resin"). When the acrylic resin is a double bond-introduced acrylic resin, the obtained adhesive layer 2 can exhibit the function as the above-mentioned adhesive layer 2 even if the addition of the curable resin described later is omitted. Can be done.

Such a double bond-introduced acrylic resin has one carbon-carbon double bond in each of 1/100 or more of the side chains in the polymer constituting the acrylic resin. It is preferably a double bond-introduced acrylic resin (sometimes referred to as "double bond side chain-introduced acrylic resin"). As described above, introducing a carbon-carbon double bond into the side chain of an acrylic resin is advantageous from the viewpoint of molecular design. The double bond side chain introduction type acrylic resin may have a carbon-carbon double bond in the main chain or at the end of the main chain.

The method for synthesizing such a double bond-introducing acrylic resin (that is, a method for introducing a carbon-carbon double bond into an acrylic resin) is not particularly limited, and for example, a functional group is used as a copolymerizable monomer. After synthesizing an acrylic resin containing a functional group (sometimes referred to as "functional group-containing acrylic resin") by copolymerizing using the monomer having the same, the functional group in the functional group-containing acrylic resin is combined with the functional group. A compound having a reactive functional group and a carbon-carbon double bond (sometimes referred to as a "carbon-carbon double bond-containing reactive compound") is added to a functional group-containing acrylic resin to carbon-carbon. Examples thereof include a method of synthesizing a double bond-introduced acrylic resin by subjecting a condensation reaction or an addition reaction while maintaining the energy ray curability (energy ray polymerization property) of the double bond.

As a control means for introducing a carbon-carbon double bond into an acrylic resin in 1/100 or more of the side chains, for example, a condensation reaction or addition to a functional group-containing acrylic resin is used. Examples thereof include a method in which the content of the carbon-carbon double bond-containing reactive compound, which is a compound to be reacted, is appropriately adjusted.

Further, when a carbon-carbon double bond-containing reactive compound is subjected to a condensation reaction or an addition reaction with a functional group-containing acrylic resin, the reaction can be effectively advanced by using a catalyst. The catalyst is not particularly limited, but a tin-based catalyst such as dibutyltin dilaurate is preferably used. The content of the tin catalyst is not particularly limited, but is preferably 0.05 parts by weight or more and 1 part by weight or less with respect to 100 parts by weight of the functional group-containing acrylic resin.

The functional group A in the functional group-containing acrylic resin and the functional group B in the carbon-carbon double bond-containing reactive compound include, for example, a carboxyl group, an acid anhydride group, a hydroxyl group, an amino group, an epoxy group, and an isocyanate. Examples of the combination of the functional group A in the functional group-containing acrylic resin and the functional group B in the carbon-carbon double bond-containing reactive compound include a carboxylic acid group (carboxyl). There are various combinations such as a combination of a group) and an epoxy group, a combination of a carboxylic acid group and an aziridyl group, a combination of a hydroxyl group and an isocyanate group, and a combination of a hydroxyl group and a carboxyl group. It is preferably a combination of a group and an isocyanate group. Thereby, the reaction tracking between these functional groups A and B can be easily performed.

Further, in the combination of these functional groups A and B, any functional group may be the functional group A of the functional group-containing acrylic resin or the functional group B of the carbon-carbon double bond-containing reactive compound. However, for example, in the case of a combination of a hydroxyl group and an isocyanate group, the hydroxyl group is the functional group A in the functional group-containing acrylic resin, and the isocyanate group is the functional group in the carbon-carbon double bond-containing reactive compound. It is preferably a group B.

In this case, examples of the monomer having a functional group A constituting the functional group-containing acrylic resin include acrylic acid, methacrylic acid, carboxyethyl acrylate, carboxypentyl acrylate, itaconic acid, maleic acid, fumaric acid, and crotonic acid. Those having a carboxyl group, those having an acid anhydride group such as maleic anhydride and itaconic anhydride, 2-hydroxyethyl (meth) acrylic acid, 2-hydroxypropyl (meth) acrylic acid, (meth) acrylic acid 4-Hydroxybutyl, 6-hydroxyhexyl (meth) acrylate, 8-hydroxyoctyl (meth) acrylate, 10-hydroxydecyl (meth) acrylate, 12-hydroxylauryl (meth) acrylate, (4-hydroxymethyl) Cyclohexyl) Methyl (meth) acrylate, vinyl alcohol, allyl alcohol, 2-hydroxyethyl vinyl ether, 2-hydroxypropyl vinyl ether, 4-hydroxybutyl vinyl ether, ethylene glycol monovinyl ether, diethylene glycol monovinyl ether, propylene glycol monovinyl ether, dipropylene glycol mono Examples thereof include those having a hydroxyl group such as vinyl ether, those having an epoxy group such as glycidyl (meth) acrylate and allyl glycidyl ether.

Examples of the carbon-carbon double bond-containing reactive compound having a functional group B include those having an isocyanate group, such as (meth) acryloyl isocyanate, (meth) acryloyloxymethyl isocyanate, and 2- (meth) acryloyloxy. Ethyl isocyanate, 2- (meth) acryloyloxypropyl isocyanate, 3- (meth) acryloyloxypropyl isocyanate, 4- (meth) acryloyloxybutyl isocyanate, m-propenyl-α, α-dimethylbenzylisocyanate and the like, and epoxy Examples of those having a group include glycidyl (meth) acrylate.

The acrylic resin preferably has a low content of low molecular weight substances from the viewpoint of preventing contamination of the semiconductor wafer 7 and the like when dicing the semiconductor wafer 7 in the step [3A]. .. In this case, the weight average molecular weight of the acrylic resin is preferably set to 300,000 to 5,000,000, more preferably 500,000 to 5,000,000, and even more preferably 800,000 to 3,000,000. If the weight average molecular weight of the acrylic resin is less than 500,000 depending on the type of the monomer component and the like, the antifouling property on the semiconductor wafer 7 and the like is lowered, and the adhesive residue is left when the semiconductor chip 20 is peeled off. May occur.

The acrylic resin has a functional group (reactive functional group) that is reactive with a cross-linking agent or a photopolymerization initiator, such as a hydroxyl group or a carboxyl group (particularly, a hydroxyl group). Is preferable. As a result, since the cross-linking agent and the photopolymerization initiator are linked to the acrylic resin which is a polymer component, it is possible to accurately suppress or prevent the leakage of these cross-linking agents and the photopolymerization initiator from the adhesive layer 2. As a result, the adhesiveness of the adhesive layer 2 to the semiconductor wafer 7 is surely reduced by the energy ray irradiation in the step [4A].

(2) Curable Resin The curable resin has, for example, curability that is cured by irradiation with energy rays. As a result of the base resin being incorporated into the crosslinked structure of the curable resin by this curing, the adhesive strength of the adhesive layer 2 is reduced.

Such a curable resin has, for example, a low molecular weight having at least two or more polymerizable carbon-carbon double bonds as functional groups that can be three-dimensionally crosslinked by irradiation with energy rays such as ultraviolet rays and electron beams. Compounds are used. Specifically, for example, trimethylolpropane tri (meth) acrylate, pentaerythritol tri (meth) acrylate, pentaerythritol tetra (meth) acrylate, tetramethylolmethanetetra (meth) acrylate, tetraethylene glycol di (meth) acrylate, 1,6-Hexanediol di (meth) acrylate, neopentyl glycol di (meth) acrylate, dipentaerythritol hexa (meth) acrylate, dipentaerythritol monohydroxypenta (meth) acrylate, 1,4-butylene glycol di (meth) acrylate ) Acrylate, esterified product of (meth) acrylic acid and polyhydric alcohol such as polyethylene glycol di (meth) acrylate, glycerin di (meth) acrylate, ester acrylate oligomer, 2-propenyl-di-3-butenyl cyanurate Cyanurate compounds having a carbon-carbon double bond-containing group such as tris (2-acryloxyethyl) isocyanurate, tris (2-methacryloxyethyl) isocyanurate, 2-hydroxyethylbis (2-acrylate). Loxyethyl) isocyanurate, bis (2-acryloxyethyl) 2-[(5-acryloxyhexyl) -oxy] ethyl isocyanurate, tris (1,3-diacryloxy-2-propyl-oxycarbonylamino-n-hexyl) ) Isocyanurate, tris (1-acryloxyethyl-3-methacryloxy-2-propyl-oxycarbonylamino-n-hexyl) isocyanurate, tris (4-acryloxy-n-butyl) isocyanurate. Examples thereof include isocyanurate-based compounds having a heavy bond-containing group, commercially available oligoester acrylates, aromatic-based and aliphatic-based urethane acrylates, and one or more of these are used in combination. be able to. Among these, it is preferable to include an oligomer having 6 or more functional groups, and more preferably to include an oligomer having 15 or more functional groups. As a result, the curable resin can be cured more reliably by irradiating with energy rays. Further, such a curable resin is preferably urethane acrylate. This has the effect of suppressing glue cracking during pickup due to appropriate flexibility.

The urethane acrylate is not particularly limited, but for example, a polyol compound such as a polyester type or a polyether type and a polyvalent isocyanate compound (for example, 2,4-tolylene diisocyanate, 2,6-tolylene). The terminal isocyanate urethane prepolymer obtained by reacting isocyanate, 1,3-xylylene diisocyanate, 1,4-xylylene diisocyanate, diphenylmethane 4,4-diisocyanate, etc. has a hydroxyl group (isocyanate). Examples thereof include those obtained by reacting a meta) acrylate (for example, 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, polyethylene glycol (meth) acrylate, etc.).

The curable resin is not particularly limited, but it is preferable that two or more curable resins having different weight average molecular weights are mixed. By using such a curable resin, the degree of cross-linking of the resin by energy ray irradiation can be easily controlled, and the pick-up property of the semiconductor chip 20 in the step [5A] can be improved. Further, as such a curable resin, for example, a mixture of a first curable resin and a second curable resin having a weight average molecular weight larger than that of the first curable resin may be used.

When the curable resin is a mixture of the first curable resin and the second curable resin, the weight average molecular weight of the first curable resin is preferably about 100 to 1000, preferably about 200 to 200. It is more preferably about 500. The weight average molecular weight of the second curable resin is preferably about 1000 to 30,000, more preferably about 1000 to 10000, and even more preferably about 2000 to 5000. Further, the number of functional groups of the first curable resin is preferably 1 to 5, and the number of functional groups of the second curable resin is preferably 6 or more. By satisfying such a relationship, the above-mentioned effect can be exerted more remarkably.

The curable resin is preferably blended in an amount of 5 parts by weight or more and 500 parts by weight or less, more preferably 10 parts by weight or more and 300 parts by weight or less, and 20 parts by weight or more with respect to 100 parts by weight of the base resin. It is more preferably blended in an amount of 200 parts by weight or less. By adjusting the blending amount of the curable resin as described above, the pick-up property of the semiconductor chip 20 in the step [5A] can be made excellent.

In this curable resin, when a double bond-introduced acrylic resin is used as the acrylic resin described above, that is, a carbon-carbon double bond is formed in the side chain, in the main chain, or at the end of the main chain. When a possessed material is used, its addition to the resin composition may be omitted. This is because, when the acrylic resin is a double bond-introduced acrylic resin, the pressure-sensitive adhesive layer 2 is provided by the carbon-carbon double bond function of the double-bond-introduced acrylic resin by irradiation with energy rays. Hardens, which reduces the adhesive strength of the adhesive layer 2, and thus can be omitted.

(3) Photopolymerization Initiator The adhesive layer 2 has a reduced adhesiveness to the semiconductor wafer 7 due to irradiation with energy rays. However, when ultraviolet rays or the like are used as the energy rays, the curable resin is used. , It is preferable to contain a photopolymerization initiator in order to facilitate the initiation of polymerization of the curable resin.

Examples of the photopolymerization initiator include 2,2-dimethoxy-1,2-diphenylethane-1-one and 1- [4- (2-hydroxyethoxy) -phenyl] -2-hydroxy-2-methyl-1. -Propane-1-one, 2-hydroxy-1-{4- [4- (2-hydroxy-2-methyl-propionyl) -benzyl] phenyl} -2-methyl-propane-1-one, benzyldiphenylsulfide, Tetramethylthium monosulfide, 4- (2-hydroxyethoxy) phenyl (2-hydroxy-2-propyl) ketone, α-hydroxy-α, α'-dimethylacetophenone, 2-methyl-2-hydroxypropiophenone, 1 -Hydroxycyclohexylphenylketone, Michelers ketone, acetophenone, methoxyacetophenone, 2,2-dimethoxy-2-phenylacetophenone, 2,2-diethoxyacetophenone, 2-methyl-1- [4- (methylthio) -phenyl] -2- Morphorinopropane-1, benzoinmethyl ether, benzoin ethyl ether, benzoinpropyl ether, benzoin isopropyl ether, benzoin isobutyl ether, benzyl, benzoin, dibenzyl, α-hydroxycyclohexylphenylketone, benzyldimethylketal, 2-hydroxymethylphenylpropane, 2 -Naphthalene sulfonyl chloride, 1-phenone-1,1-propandion-2- (o-ethoxycarbonyl) oxime, benzophenone, benzoylbenzoic acid, 4,4'-dimethylaminobenzophenone, 4,4'-diethylaminobenzophenone, 4 , 4'-dichlorobenzophenone, 3,3'-dimethyl-4-methoxybenzophenone, o-acrylicoxybenzophenone, p-acrylicoxybenzophenone, o-methacryloxybenzophenone, p-methacryloxybenzophenone, p- (meth) acrylicoxy Benzophenone-4-carboxylic acid esters of acrylates such as ethoxybenzophenone, 1,4-butanediol mono (meth) acrylate, 1,2-ethanediol mono (meth) acrylate, 1,8-octanediol mono (meth) acrylate. , Thioxanson, 2-Chlorothioxanson, 2-Methylthioxanson, 2,4-dimethylthioxanson, Isopropylthioxanson, 2,4-Dichlorothioxanson, 2,4-diethylthioxan Son, 2,4-diisopropylthioxanthone, azobisisobutyronitrile, β-chloranthraquinone, camphorquinone, halogenated ketone, acylphosphinoxide, acylphosphonate, polyvinylbenzophenone, chlorothioxanthone, dodecylthioxanthone, Examples thereof include dimethylthioxanthone, diethylthioxanthone, 2-ethylanthraquinone, t-butylanthraquinone, 2,4,5-triary-luimidazole dimer, and the like, and one or more of these may be used in combination. Can be done.

Among these, benzophenone derivatives and alkylphenone derivatives are preferable. These compounds have a hydroxyl group as a reactive functional group in the molecule, and can be linked to a base resin or a curable resin via the reactive functional group, thereby enhancing the function as a photopolymerization initiator. It can be surely demonstrated.

The photopolymerization initiator is preferably blended in an amount of 0.1 parts by weight or more and 50 parts by weight or less, and more preferably 0.5 parts by weight or more and 10 parts by weight or less with respect to 100 parts by weight of the base resin. .. By adjusting the blending amount of the photopolymerization initiator as described above, the pick-up property of the semiconductor chip 20 from the adhesive tape 100 becomes suitable.

(4) Cross-linking agent Further, the curable resin may contain a cross-linking agent. By containing the cross-linking agent, the curability of the curable resin can be improved.

The cross-linking agent is not particularly limited, but for example, an isocyanate-based cross-linking agent, an epoxy-based cross-linking agent, a urea resin-based cross-linking agent, a methylol-based cross-linking agent, a chelate-based cross-linking agent, an aziridine-based cross-linking agent, a melamine-based cross-linking agent, and a multivalent cross-linking agent. Examples thereof include metal chelate-based cross-linking agents, acid anhydride-based cross-linking agents, polyamine-based cross-linking agents, and carboxyl group-containing polymer-based cross-linking agents. Of these, isocyanate-based cross-linking agents are preferable.

The isocyanate-based cross-linking agent is not particularly limited, but is, for example, a trimeric of a polyisocyanate compound and a polyisocyanate compound of polyisocyanate, or a trimeric of a terminal isocyanate compound obtained by reacting a polyisocyanate compound with a polyol compound. Alternatively, a blocked polyisocyanate compound or the like in which a terminal isocyanate urethane prepolymer is sealed with phenol, oximes or the like can be mentioned.

As polyvalent isocyanates, for example, 2,4-tolylene diisocyanate, 2,6-tolylene diisocyanate, 1,3-xylylene diisocyanate, 1,4-xylene diisocyanate, diphenylmethane-4,4'-diisocyanate, diphenylmethane. -2,4'-diisocyanate, 3-methyldiphenylmethane diisocyanate, hexamethylene diisocyanate, isophorone diisocyanate, dicyclohexylmethane-4,4'-diisocyanate, dicyclohexylmethane-2,4'-diisocyanate, 4,4'-diphenylether diisocyanate, 4 , 4'-[2,2-bis (4-phenoxyphenyl) propane] diisocyanate, 2,2,4-trimethyl-hexamethylene diisocyanate and the like, and one or a combination of two or more of these is used. be able to. Among these, at least one polyvalent isocyanate selected from the group consisting of 2,4-tolylene diisocyanate, diphenylmethane-4,4'-diisocyanate and hexamethylene diisocyanate is preferable.

The cross-linking agent is preferably blended in an amount of 0.01 parts by weight or more and 50 parts by weight or less with respect to 100 parts by weight of the base resin, and more preferably 5 parts by weight or more and 50 parts by weight or less. By adjusting the blending amount of the cross-linking agent as described above, the pick-up property of the semiconductor chip 20 from the adhesive tape 100 becomes suitable.

(5) Other Ingredients Further, in the resin composition constituting the adhesive layer 2, in addition to the above-mentioned components (1) to (4), as other components, a tackifier, an antistatic agent, and a tackifier , Filler, colorant, flame retardant, softener, antioxidant, plasticizer, surfactant, conductive material (antistatic agent) and the like.

The tackifier is not particularly limited, and for example, rosin resin, terpene resin, kumaron resin, phenol resin, styrene resin, aliphatic petroleum resin, aromatic petroleum resin, and aliphatic aromatic resin are all used. Examples thereof include polymerized petroleum resins, and one or a combination of two or more of these can be used.

Further, the thickness of the adhesive layer 2 is not particularly limited, but is preferably 3 μm or more and 50 μm or less, and more preferably 5 μm or more and 30 μm or less. By setting the thickness of the adhesive layer 2 within such a range, the adhesive layer 2 exerts a good adhesive force before applying energy to the adhesive layer 2, and after applying energy to the adhesive layer 2, the adhesive layer 2 exhibits good adhesive force. Good peelability is exhibited between the adhesive layer 2 and the semiconductor wafer 7.

The adhesive layer 2 may be composed of a laminated body (multilayer body) in which a plurality of layers composed of different resin compositions are laminated.

The substrate-attaching adhesive tape 100 having such a configuration can be manufactured, for example, as follows.

<Manufacturing method of adhesive tape for attaching substrates>
FIG. 4 is a vertical cross-sectional view for explaining a method of manufacturing the adhesive tape for attaching the substrate shown in FIG. In the following description, the upper side in FIG. 4 is referred to as "upper" and the lower side is referred to as "lower".

[1B] First, a base material 4 in which the third region 43, the first region 41, and the second region 42 are laminated in this order is prepared, and the upper surface (one surface) of the base material 4, that is, the third region 43. An adhesive layer 2 is formed on the side (see FIG. 4A).

The method for producing the base material 4 is not particularly limited, but molding materials having different antistatic agent contents are prepared so that the third region 43, the first region 41, and the second region 42 are formed. Then, for example, a method of molding these as a laminated body by using a general molding method such as a coextrusion method or a dry laminating method can be mentioned.

Further, the base material 4 can be used without stretching, and if necessary, a uniaxial or biaxial stretching treatment may be used. As described above, when the base material 4 contains a polymer material such as a conductive polymer or a permanent antistatic polymer (IDP) as the conductive material, the degree of orientation in the base material 4 should be adjusted. Therefore, the magnitude of the surface resistivity on one surface side of the third region 43, the first region 41, and the second region 42 of the base material 4 and the volume resistivity of the base material 4 can be appropriately set.

Further, the surface of the base material 4 is subjected to corona treatment, chromic acid treatment, mat treatment, ozone exposure treatment, flame exposure treatment, and high-voltage exposure for the purpose of improving the adhesion between the base material 4 and the adhesive layer 2. Surface treatments such as treatment, ionizing radiation treatment, primer treatment, and anchor coating treatment may be applied.

Further, the adhesive layer 2 is adhered by applying or spraying a liquid material in which the resin composition which is the constituent material of the adhesive layer 2 is dissolved in a solvent to form a varnish on the base material 4, and then volatilizing the solvent. It can be obtained by forming the layer 2.

The solvent is not particularly limited, and examples thereof include methyl ethyl ketone, acetone, toluene, dimethyl formaldehyde, and the like, and one or a combination of two or more of these can be used.

Further, the liquid material can be applied or sprayed on the base material 4 by using a method such as a die coat, a curtain die coat, a gravure coat, a comma coat, a bar coat and a lip coat.

[2B] Next, with respect to the adhesive layer 2 formed on the base material 4, the base material 4 is left in the thickness direction of the adhesive layer 2 so as to separate the central side and the outer peripheral side into a circle. By removing a part of the adhesive layer 2 in an annular shape, the adhesive layer 2 is provided with a central portion 122 and an outer peripheral portion 121 (see FIG. 4B).

Examples of the method of removing a part of the adhesive layer 2 in an annular shape include a method of punching the adhesive layer 2 so as to surround the area to be removed and then removing the adhesive layer 2 located in the punched area.

Further, the punching of the region to be removed can be performed by using, for example, a method using a roll die or a method using a press die. Above all, a method using a roll-shaped mold capable of continuously producing the adhesive tape 100 is preferable.

In this step, a part of the adhesive layer 2 is punched out in a ring shape (circular shape) to form the central portion 122 and the outer peripheral portion 121, but the shape of punching out a part of the adhesive layer 2 is the above-mentioned semiconductor device. In the manufacturing method of the above, any shape may be used as long as the outer peripheral portion 121 of the adhesive layer 2 can be fixed by a wafer ring. Specifically, as the punching shape, for example, in addition to the above-mentioned circular shape, an elliptical shape such as an ellipse or a bale shape, a polygonal shape such as a quadrangular shape or a pentagonal shape, or the like can be mentioned.

[3B] Next, by laminating the separator 1 on the adhesive layer 2 formed on the base material 4, an adhesive tape 100 in which the adhesive layer 2 is coated with the separator 1 is obtained (FIG. 4 (c)). reference.).

The method of laminating the separator 1 on the adhesive layer 2 is not particularly limited, and for example, a laminating method using a roll or a laminating method using a press can be used. Among these, the laminating method using a roll is preferable from the viewpoint of productivity that continuous production can be performed.

The separator 1 is not particularly limited, and examples thereof include a polypropylene film, a polyethylene film, and a polyethylene terephthalate film.

Further, the separator 1 may be one whose surface has been subjected to a mold release treatment because it is peeled off when the adhesive tape 100 is used. Examples of the mold release treatment include a treatment of coating a release agent on the surface of the separator 1 and a treatment of making fine irregularities on the surface of the separator 1. Examples of the release agent include silicone-based, alkyd-based, and fluorine-based ones.

Through the above steps, the adhesive tape 100 coated with the separator 1 can be formed.

The adhesive tape 100 coated with the separator 1 manufactured in the present embodiment is used after the adhesive tape 100 is peeled from the separator 1 in the method for manufacturing a semiconductor device using the adhesive tape 100 described above.

Further, when the separator 1 is peeled off from the pressure-sensitive adhesive layer 2 covered by the separator 1, it is preferable to peel off the separator 1 at an angle of 90 degrees or more and 180 degrees or less with respect to the surface of the pressure-sensitive adhesive layer 2. By setting the angle at which the separator 1 is peeled off within the above range, it is possible to reliably prevent the peeling at points other than the interface between the adhesive layer 2 and the separator 1.

In the present embodiment, the case where the semiconductor device 10 is applied to a quad flat package (QFP) and the semiconductor device 10 having such a configuration is manufactured by using the adhesive tape 100 has been described, but only in such a case. The adhesive tape 100 can be applied to the manufacture of various forms of semiconductor packages, such as dual in-line packages (DIP), chip carriers with plastic leads (PLCC), low profile quads. -Flat Package (LQFP), Small Outline Package (SOP), Small Outline J-Lead Package (SOJ), Thin Small Outline Package (TOP), Thin Quad Flat Package (TQFP), Tape Carrier Package (TCP), Ball Grid Array (BGA), Chip Size Package (CSP), Matrix Array Package, Ball Grid Array (MAPBGA), Chip Stacked Chip Size Package It can be applied to memory and logic elements such as.

Further, in the present embodiment, the case where the adhesive tape for attaching the substrate of the present invention is used for dicing a large semiconductor wafer such as 12 inches and picking up a semiconductor chip as a obtained cut piece has been described. Needless to say, it can be applied to a small semiconductor wafer such as 8 inches instead of a 12-inch semiconductor wafer, and can also be applied to an 18-inch semiconductor wafer larger than 12 inches.

Further, in the present embodiment, the adhesive tape for attaching the substrate of the present invention has been described as having a function of reducing the adhesiveness of the adhesive layer to the semiconductor wafer by applying energy to the adhesive layer provided by the adhesive tape. However, the present invention is not limited to this, and the adhesive layer provided in the adhesive tape for attaching a substrate may be one in which the adhesiveness to the semiconductor wafer is not lowered by applying energy. That is, the addition of the curable resin to the adhesive layer may be omitted.

Further, not only when a semiconductor chip is obtained as a cutting piece by dicing a semiconductor wafer to which an adhesive tape for attaching a substrate is attached, but also as a cutting piece by dicing an LED substrate to which an adhesive tape for attaching a substrate is attached. The adhesive tape for attaching a substrate of the present invention can also be applied to obtain a light emitting diode. That is, examples of the substrate to be attached by the adhesive tape for attaching the substrate of the present invention include an LED substrate and the like in addition to the semiconductor wafer.

Although the adhesive tape for attaching the substrate of the present invention has been described above, the present invention is not limited thereto.

For example, any component capable of exhibiting the same function may be added to each layer of the adhesive tape for attaching the substrate of the present invention.

Further, the structure of each layer included in the adhesive tape for attaching the substrate of the present invention can be replaced with an arbitrary one capable of exhibiting the same function, or a structure having an arbitrary structure can be added.

Further, the present invention is not limited to the case where a semiconductor chip is obtained as a cut piece by dicing a semiconductor wafer (board) to which an adhesive tape for attaching a substrate is attached, and a problem (dust adsorption due to static electricity) is generated due to static electricity. The adhesive tape for attaching a substrate of the present invention can also be applied to a substrate processing application in which (such as) occurs. In addition to the above-mentioned semiconductor wafers, the substrates to be attached by the adhesive tape for attaching the substrate of the present invention include, for example, glass substrates such as soda lime glass, borosilicate glass, and quartz glass, alumina, silicon nitride, and titanium oxide. Examples thereof include ceramic substrates such as, acrylic, polycarbonate, resin material substrates such as rubber, and metal material substrates.

<Base material for adhesive tape>
The base material for an adhesive tape of the present invention is a base material 4 constituting the pressure-sensitive adhesive tape 100 of FIG. 3, and more specifically, the base material 4 is provided, and the adhesive layer 2 is laminated on one surface of the base material 4. In this case, the substrate is individualized by cutting the substrate on the adhesive layer 2 with a cutting device so as to reach the middle of the thickness direction of the substrate 4 from the substrate in a fixed state. It is applied to the adhesive tape 100 which is temporarily fixed to the substrate and used.

The base material 4 contains a polyolefin resin and an antistatic agent, and has a third region 43 and a first region 41 on the side where the cutting device invades during individualization, and an adhesive layer 2 in the third region. Has a second region 42 that is located on the opposite side of this surface and is in contact with the first region 41, and the third region 43, the first region 41, and the second region 42 are laminated in this order. The content of the antistatic agent in the first region 41 is A [% by weight], the content of the antistatic agent in the second region 42 is B [% by weight], and the antistatic agent in the third region 43. When the content of is C [% by weight], the relationship of A <C ≦ B is satisfied.

As described above, the content A [% by weight] of the antistatic agent in the first region 41, the content B [% by weight] of the antistatic agent in the second region 42, and the content of the antistatic agent in the third region 43. By satisfying the relationship that the amount C [% by weight] is A <C ≦ B, the semiconductor chip 20 is subjected to the pasting step [2A], the dicing step [3A], the pick-up step [5A], and the like. It is possible to accurately suppress or prevent the generation of static electricity. Therefore, it is possible to accurately suppress or prevent the semiconductor chip from being damaged due to the discharge of static electricity, resulting in deterioration of the characteristics of the semiconductor chip 20 and further damage to the semiconductor chip 20. can.

Further, in the dicing step [3A], when the semiconductor wafer 7 is cut in the thickness direction of the semiconductor wafer 7 using the blade, the blade may reach halfway in the thickness direction of the base material 4. In order to satisfy the relationship of A <C ≦ B, it is possible to accurately suppress or prevent the generation of base material waste obtained by melting and stretching the base material 4 in the base material 4 due to frictional heat due to dicing.

As the resin material, manufacturing method, etc. of the base material for the adhesive tape of the present invention, the same material as that of the base material 4 can be used, and the above description shall be applied mutatis mutandis.

Next, specific examples of the present invention will be described.
The present invention is not limited to the description of these examples.

1. 1. Preparation of Raw Materials First, the raw materials used in the production of the adhesive tape for attaching the substrate of each example and each comparative example are shown below.

(Resin material 1)
As the resin material 1, polypropylene (manufactured by Sumitomo Chemical Co., Ltd., "FS2011DG3") was prepared.

(Antistatic agent 1)
Perestat 300 (manufactured by Sanyo Chemical Industries, Ltd.) was prepared as an antistatic agent 1 (polymer type antistatic agent).

(Antistatic agent 2)
As the antistatic agent 2, an ionic liquid (manufactured by Koei Chemical Industry Co., Ltd., product number: IL-A2) was prepared.

When coating the ionic liquid (IL-A2), the antistatic agent 2 is prepared by adding a tetrafunctional urethane acrylate (manufactured by Nippon Kayaku Co., Ltd., product number: KAYARAD RP-1040) as a binder. Using.

(Antistatic agent 3)
As the antistatic agent 3, polythiophene (manufactured by Arakawa Chemical Co., Ltd., product number: Alacoat AS625) was prepared. In addition to the antistatic agent, AS625 contains an acrylic resin as a polymer binder.

(Base resin 1)
As the base resin 1, a copolymer having a weight average molecular weight of 500,000 obtained by copolymerizing 95 parts by weight of butyl acrylate and 5 parts by weight of acrylic acid was used.

(Curable resin 1)
As the curable resin 1, urethane acrylate (manufactured by Nippon Kayaku Co., Ltd., product number: KAYARAD RP-1040), which is a tetrafunctional oligomer, was prepared.

(Crosslinking agent 1)
As the cross-linking agent 1, polyisocyanate (manufactured by Nippon Polyurethane Industry Co., Ltd., product number: Coronate L) was prepared.

(Photopolymerization Initiator 1)
As the photopolymerization initiator 1, benzyl dimethyl ketal (manufactured by Ciba Specialty Chemicals Co., Ltd., product number: Irgacure 651) was prepared.

2. Fabrication of Adhesive Tape for Attaching Substrate [Example 1]
Kneaded product 1 in which resin material 1 (100% by weight) is kneaded with a twin-screw kneader, resin material 1 (87% by weight), and antistatic agent 1 (13% by weight) are kneaded in a twin-screw kneader. A kneaded product 3 in which the product 2, the resin material 1 (94% by weight), and the antistatic agent 1 (6% by weight) are kneaded with a twin-screw kneader is prepared, and then the kneaded product 2 and the kneaded product are prepared. 1. The kneaded product 3 is co-extruded into a film by a co-extruder so as to be laminated in this order, and the second region 42 having a thickness of 50 μm derived from the kneaded product 2 and the kneaded product 3 having a thickness of 50 μm are derived from the kneaded product 1. A base material 4 composed of a laminated body in which the first region 41 and the third region 43 having a thickness of 50 μm derived from the kneaded product 3 were laminated in this order was produced.

Next, the base resin 1 (100 parts by weight), the curable resin 1 (140 parts by weight with respect to 100 parts by weight of the base resin), the cross-linking agent 1 (5 parts by weight with respect to 100 parts by weight of the base resin) and photopolymerization are started. A liquid material containing a resin composition containing Agent 1 (3 parts by weight with respect to 100 parts by weight of the base resin) was prepared. This liquid material is bar-coated on the base material 4 (third region 43) so that the thickness of the adhesive layer 2 after drying is 10 μm, and then dried at 80 ° C. for 10 minutes to make the base material 4 The adhesive layer 2 was formed on one surface to obtain the adhesive tape 100 of Example 1.

[Example 2]
Kneaded product 1 in which resin material 1 (95% by weight) and antistatic agent 1 (5% by weight) are kneaded with a twin-screw kneader, resin material 1 (87% by weight), and antistatic agent 1 (13% by weight). %) Is kneaded with a twin-screw kneader, and the resin material 1 (94% by weight) and the antistatic agent 1 (6% by weight) are kneaded with a twin-screw kneader. After preparation, the kneaded product 2, the kneaded product 1, and the kneaded product 3 are co-extruded into a film by a co-extruder so as to be laminated in this order, and a second region 42 having a thickness of 50 μm derived from the kneaded product 2 is obtained. And the base material 4 composed of a laminate in which the first region 41 having a thickness of 50 μm derived from the kneaded product 1 and the third region 43 having a thickness of 50 μm derived from the kneaded product 3 are laminated in this order. Made.

Next, the base resin 1 (100 parts by weight), the curable resin 1 (140 parts by weight with respect to 100 parts by weight of the base resin), the cross-linking agent 1 (5 parts by weight with respect to 100 parts by weight of the base resin) and photopolymerization are started. A liquid material containing a resin composition containing Agent 1 (3 parts by weight with respect to 100 parts by weight of the base resin) was prepared. This liquid material is bar-coated on the base material 4 (third region 43) so that the thickness of the adhesive layer 2 after drying is 10 μm, and then dried at 80 ° C. for 10 minutes to make the base material 4 An adhesive layer 2 was formed on one surface to obtain an adhesive tape 100 of Example 2.

[Example 3]
Kneaded product 1 in which resin material 1 (95% by weight) and antistatic agent 1 (5% by weight) are kneaded with a twin-screw kneader, resin material 1 (80% by weight), and antistatic agent 1 (20% by weight). %) Is kneaded with a twin-screw kneader, and a kneaded product 3 is prepared by kneading a resin material 1 (90% by weight) and an antistatic agent 1 (10% by weight) with a twin-screw kneader. Then, the kneaded product 2, the kneaded product 1, and the kneaded product 3 are co-extruded into a film by a co-extruder so as to be laminated in this order, and the second region 42 having a thickness of 50 μm derived from the kneaded product 2 is formed. , A base material 4 composed of a laminate in which a first region 41 having a thickness of 50 μm derived from the kneaded product 1 and a third region 43 having a thickness of 50 μm derived from the kneaded product 3 are laminated in this order is produced. bottom.

Next, the base resin 1 (100 parts by weight), the curable resin 1 (140 parts by weight with respect to 100 parts by weight of the base resin), the cross-linking agent 1 (5 parts by weight with respect to 100 parts by weight of the base resin) and photopolymerization are started. A liquid material containing a resin composition containing Agent 1 (3 parts by weight with respect to 100 parts by weight of the base resin) was prepared. This liquid material is bar-coated on the base material 4 (third region 43) so that the thickness of the adhesive layer 2 after drying is 10 μm, and then dried at 80 ° C. for 10 minutes to make the base material 4 The adhesive layer 2 was formed on one surface to obtain the adhesive tape 100 of Example 3.

[Example 4]
Kneaded product 1 in which resin material 1 (98% by weight) and antistatic agent 1 (2% by weight) are kneaded with a twin-screw kneader, resin material 1 (77% by weight), and antistatic agent 1 (23% by weight). %) Is kneaded with a twin-screw kneader, and a kneaded product 3 is prepared by kneading a resin material 1 (90% by weight) and an antistatic agent 1 (10% by weight) with a twin-screw kneader. Then, the kneaded product 2, the kneaded product 1, and the kneaded product 3 are co-extruded into a film by a co-extruder so as to be laminated in this order, and the second region 42 having a thickness of 50 μm derived from the kneaded product 2 is formed. , A base material 4 composed of a laminate in which a first region 41 having a thickness of 50 μm derived from the kneaded product 1 and a third region 43 having a thickness of 50 μm derived from the kneaded product 3 are laminated in this order is produced. bottom.

Next, the base resin 1 (100 parts by weight), the curable resin 1 (140 parts by weight with respect to 100 parts by weight of the base resin), the cross-linking agent 1 (5 parts by weight with respect to 100 parts by weight of the base resin) and photopolymerization are started. A liquid material containing a resin composition containing Agent 1 (3 parts by weight with respect to 100 parts by weight of the base resin) was prepared. This liquid material is bar-coated on the base material 4 (third region 43) so that the thickness of the adhesive layer 2 after drying is 10 μm, and then dried at 80 ° C. for 10 minutes to make the base material 4 The adhesive layer 2 was formed on one surface to obtain the adhesive tape 100 of Example 4.

[Reference example 1]
Kneaded product 1 in which resin material 1 (100% by weight) is kneaded with a twin-screw kneader, resin material 1 (87% by weight), and antistatic agent 1 (13% by weight) are kneaded in a twin-screw kneader. The product 2 is prepared, and then the kneaded products 1 and 2 are co-extruded into a film by a co-extruder, and the first region 41 having a thickness of 50 μm derived from the kneaded product 1 and the thickness derived from the kneaded product 2 are obtained. A base material 4 composed of a laminated body in which a second region 42 having a size of 50 μm was laminated was produced.

Next, the base resin 1 (100 parts by weight), the curable resin 1 (140 parts by weight with respect to 100 parts by weight of the base resin), the cross-linking agent 1 (5 parts by weight with respect to 100 parts by weight of the base resin) and photopolymerization are started. A liquid material containing a resin composition containing Agent 1 (3 parts by weight with respect to 100 parts by weight of the base resin) was prepared. This liquid material is bar-coated on the base material 4 (first region 41) so that the thickness of the adhesive layer 2 after drying is 10 μm, and then dried at 80 ° C. for 10 minutes to make the base material 4 The adhesive layer 2 was formed on one surface to obtain the adhesive tape 100 of Reference Example 1.

[Reference example 2]
Kneaded product 1 in which resin material 1 (95% by weight) and antistatic agent 1 (5% by weight) are kneaded with a twin-screw kneader, resin material 1 (87% by weight), and antistatic agent 1 (13% by weight). %) And kneaded with a twin-screw kneader to prepare a kneaded product 2, and then these kneaded products 1 and 2 are co-extruded into a film with a co-extruder to obtain a first product having a thickness of 50 μm derived from the kneaded product 1. A base material 4 composed of a laminated body in which a region 41 and a second region 42 having a thickness of 50 μm derived from the kneaded product 2 were laminated was produced.

Next, the base resin 1 (100 parts by weight), the curable resin 1 (140 parts by weight with respect to 100 parts by weight of the base resin), the cross-linking agent 1 (5 parts by weight with respect to 100 parts by weight of the base resin) and photopolymerization are started. A liquid material containing a resin composition containing Agent 1 (3 parts by weight with respect to 100 parts by weight of the base resin) was prepared. This liquid material is bar-coated on the base material 4 (first region 41) so that the thickness of the adhesive layer 2 after drying is 10 μm, and then dried at 80 ° C. for 10 minutes to make the base material 4 An adhesive layer 2 was formed on one surface to obtain an adhesive tape 100 of Reference Example 2.

[Reference example 3]
Kneaded product 1 in which resin material 1 (95% by weight) and antistatic agent 1 (5% by weight) are kneaded with a twin-screw kneader, resin material 1 (80% by weight), and antistatic agent 1 (20% by weight). %) And kneaded with a twin-screw kneader to prepare a kneaded product 2, and then these kneaded products 1 and 2 are co-extruded into a film with a co-extruder to obtain a first product having a thickness of 50 μm derived from the kneaded product 1. A base material 4 composed of a laminated body in which a region 41 and a second region 42 having a thickness of 50 μm derived from the kneaded product 2 were laminated was produced.

Next, the base resin 1 (100 parts by weight), the curable resin 1 (140 parts by weight with respect to 100 parts by weight of the base resin), the cross-linking agent 1 (5 parts by weight with respect to 100 parts by weight of the base resin) and photopolymerization are started. A liquid material containing a resin composition containing Agent 1 (3 parts by weight with respect to 100 parts by weight of the base resin) was prepared. This liquid material is bar-coated on the base material 4 (first region 41) so that the thickness of the adhesive layer 2 after drying is 10 μm, and then dried at 80 ° C. for 10 minutes to make the base material 4 An adhesive layer 2 was formed on one surface to obtain an adhesive tape 100 of Reference Example 3.

[Reference example 4]
Kneaded product 1 in which resin material 1 (98% by weight) and antistatic agent 1 (2% by weight) are kneaded with a twin-screw kneader, resin material 1 (77% by weight), and antistatic agent 1 (23% by weight). %) And kneaded with a twin-screw kneader to prepare a kneaded product 2, and then these kneaded products 1 and 2 are co-extruded into a film with a co-extruder to obtain a first product having a thickness of 50 μm derived from the kneaded product 1. A base material 4 composed of a laminated body in which a region 41 and a second region 42 having a thickness of 50 μm derived from the kneaded product 2 were laminated was produced.

Next, the base resin 1 (100 parts by weight), the curable resin 1 (140 parts by weight with respect to 100 parts by weight of the base resin), the cross-linking agent 1 (5 parts by weight with respect to 100 parts by weight of the base resin) and photopolymerization are started. A liquid material containing a resin composition containing Agent 1 (3 parts by weight with respect to 100 parts by weight of the base resin) was prepared. This liquid material is bar-coated on the base material 4 (first region 41) so that the thickness of the adhesive layer 2 after drying is 10 μm, and then dried at 80 ° C. for 10 minutes to make the base material 4 The adhesive layer 2 was formed on one surface to obtain the adhesive tape 100 of Reference Example 4.

[Comparative Example 1]
A kneaded product 1 is prepared by kneading the resin material 1 (100% by weight) with a twin-screw kneader, and then the kneaded product 1 is extruded into a film by an extruder to obtain a 100 μm-thick base material derived from the kneaded product 1. 4 was prepared.

Next, the base resin 1 (100 parts by weight), the curable resin 1 (140 parts by weight with respect to 100 parts by weight of the base resin), the cross-linking agent 1 (5 parts by weight with respect to 100 parts by weight of the base resin) and photopolymerization are started. A liquid material containing a resin composition containing Agent 1 (3 parts by weight with respect to 100 parts by weight of the base resin) was prepared. This liquid material is bar-coated on the base material 4 (second region 42) so that the thickness of the adhesive layer 2 after drying is 10 μm, and then dried at 80 ° C. for 10 minutes to make the base material 4 An adhesive layer 2 was formed on one surface to obtain an adhesive tape 100 of Comparative Example 1.

[Comparative Example 2]
A kneaded product 1 obtained by kneading a resin material 1 (87% by weight) and an antistatic agent 1 (13% by weight) with a twin-screw kneader is extruded into a film by an extruder, and a thickness of 100 μm derived from the kneaded product 1 is obtained. The base material 4 was prepared.

Next, the base resin 1 (100 parts by weight), the curable resin 1 (140 parts by weight with respect to 100 parts by weight of the base resin), the cross-linking agent 1 (5 parts by weight with respect to 100 parts by weight of the base resin) and photopolymerization are started. A liquid material containing a resin composition containing Agent 1 (3 parts by weight with respect to 100 parts by weight of the base resin) was prepared. This liquid material is bar-coated on the base material 4 (second region 42) so that the thickness of the adhesive layer 2 after drying is 10 μm, and then dried at 80 ° C. for 10 minutes to make the base material 4 An adhesive layer 2 was formed on one surface to obtain an adhesive tape 100 of Comparative Example 2.

[Comparative Example 3]
A kneaded product 1 is prepared by kneading the resin material 1 (100% by weight) with a twin-screw kneader, and then the kneaded product 1 is extruded into a film by an extruder to obtain a 100 μm-thick base material derived from the kneaded product 1. 4 was prepared.

Next, the base resin 1 (100 parts by weight), the curable resin 1 (140 parts by weight with respect to 100 parts by weight of the base resin), the cross-linking agent 1 (5 parts by weight with respect to 100 parts by weight of the base resin) and photopolymerization are started. A liquid material containing a resin composition containing Agent 1 (3 parts by weight with respect to 100 parts by weight of the base resin) was prepared. This liquid material is bar-coated on the base material 4 (second region 42) so that the thickness of the adhesive layer 2 after drying is 10 μm, and then dried at 80 ° C. for 10 minutes to make the base material 4 The adhesive layer 2 was formed on one surface.

Next, the antistatic agent 2 is bar-coated on the other surface of the base material 4 so that the thickness of the antistatic layer after drying is 0.3 μm, and then dried at 80 ° C. for 10 minutes. By forming an antistatic layer on the other surface of the base material 4, the adhesive tape 100 of Comparative Example 3 was obtained.

[Comparative Example 4]
A kneaded product 1 is prepared by kneading the resin material 1 (100% by weight) with a twin-screw kneader, and then the kneaded product 1 is extruded into a film by an extruder to obtain a 100 μm-thick base material derived from the kneaded product 1. 4 was prepared.

Next, the base resin 1 (100 parts by weight), the curable resin 1 (140 parts by weight with respect to 100 parts by weight of the base resin), the cross-linking agent 1 (5 parts by weight with respect to 100 parts by weight of the base resin) and photopolymerization are started. A liquid material containing a resin composition containing Agent 1 (3 parts by weight with respect to 100 parts by weight of the base resin) was prepared. This liquid material is bar-coated on the base material 4 (second region 42) so that the thickness of the adhesive layer 2 after drying is 10 μm, and then dried at 80 ° C. for 10 minutes to make the base material 4 The adhesive layer 2 was formed on one surface.

Next, the antistatic agent 3 is bar-coated on the other surface of the base material 4 so that the thickness of the antistatic layer after drying is 0.3 μm, and then dried at 80 ° C. for 10 minutes. By forming an antistatic layer on the other surface of the base material 4, the adhesive tape 100 of Comparative Example 4 was obtained.

[Comparative Example 5]
Kneaded product 1 in which resin material 1 (80% by weight) and antistatic agent 1 (20% by weight) are kneaded with a twin-screw kneader, and kneaded with resin material 1 (100% by weight) kneaded with a twin-screw kneader. The product 2 is prepared, and then the kneaded products 1 and 2 are co-extruded into a film by a co-extruder, and the first region 41 having a thickness of 50 μm derived from the kneaded product 1 and the thickness derived from the kneaded product 2 are obtained. A base material 4 composed of a laminated body in which a second region 42 having a size of 50 μm was laminated was produced.

Next, the base resin 1 (100 parts by weight), the curable resin 1 (140 parts by weight with respect to 100 parts by weight of the base resin), the cross-linking agent 1 (5 parts by weight with respect to 100 parts by weight of the base resin) and photopolymerization are started. A liquid material containing a resin composition containing Agent 1 (3 parts by weight with respect to 100 parts by weight of the base resin) was prepared. This liquid material is bar-coated on the base material 4 (first region 41) so that the thickness of the adhesive layer 2 after drying is 10 μm, and then dried at 80 ° C. for 10 minutes to make the base material 4 An adhesive layer 2 was formed on one surface to obtain an adhesive tape 100 of Comparative Example 5.

3. 3. Evaluation The obtained adhesive tapes for attaching the substrates to each of the Examples and Comparative Examples were evaluated by the following methods.

3-1. Evaluation of Volume resistivity of Base Material For the adhesive tape for attaching the substrate in each example and each comparative example, the volume resistivity of the base material 4 before irradiation with ultraviolet rays on the adhesive layer 2 was determined according to JIS K 6911, respectively. The measurement was performed using a measuring device (“R12702B” manufactured by Advantest Co., Ltd.).

3-2. Evaluation of Surface Resistivity of Base Material For the adhesive tape for attaching the substrate in each example and each comparative example, the first region 41, the second region 42, and the third region 43 of the base material 4 before the pressure-sensitive adhesive layer 2 was irradiated with ultraviolet rays. The surface resistivity of one side of the adhesive layer 2 side was measured according to IEC-61340 using a surface resistivity measuring device (manufactured by Trek Japan, "152P-CR"). For the adhesive tape for attaching a substrate in which the formation of at least one of the first region 41 and the third region 43 is omitted, the measurement of the surface resistivity thereof is omitted.

3-3. Evaluation of Peak Potential after Peeling from Semiconductor Wafer For each of the adhesive tapes for attaching the substrate of each example and each comparative example, the width was 20 mm, and the section of the silicon wafer having a length of 4 inches or more and 6 inches or less was obtained. After irradiating the adhesive layer 2 with ultraviolet rays under the conditions of ultraviolet illuminance: 55 W / cm ² and ultraviolet irradiation amount: 200 mj / cm ² , the adhesive layer 2 is held at one end of the adhesive tape for attaching the substrate. A voltmeter (Prostat's "CVM-780") measures the peak potential measured on the silicon wafer when it is peeled off at a speed of 300 mm / min in the direction of 180 ° under the conditions of a temperature of 24 ° C. and a humidity of 40% Rh. ) Was placed on the silicon wafer from which the adhesive tape for attaching the substrate was peeled off.

Then, the adhesive tape for attaching the substrate of each Example and each Comparative Example was evaluated from the measured peak potential according to the following criteria.

⊚: The peak potential was 20 V or less.
◯: The peak potential was more than 20 V and 40 V or less.
Δ: The peak potential was more than 40 V and 100 V or less.
X: The peak potential was over 100 V.

3-4. Evaluation of the presence or absence of base material waste An 8-inch size silicon wafer (thickness 150 μm) was prepared, and the adhesive tape 100 of each Example and each comparative example was placed on the silicon wafer with the adhesive layer 2 on the silicon wafer side. Fixed. After that, the silicon wafer is cut with a blade until it reaches the first region 41 of the base material 4 in the thickness direction to be individualized, thereby forming a plurality of individualized bodies having a size of 6 mm in length × 6 mm in width. After the acquisition, the adhesive layer 2 was subjected to energy by irradiating the adhesive layer 2 with ultraviolet rays to cure the adhesive layer 2.

Next, the individualized body was picked up by adsorption with a vacuum collet while maintaining the state in which the individualized body was pushed up by using a needle. After that, the number (number) of base material scraps in the cutting groove formed by the blade reaching the first region 41 so as to surround the position where the individualized body was picked up was visually confirmed. ..

As shown in Table 1, in the adhesive tape for attaching the substrate of each embodiment, the base material 4 has a third region 43, a first region 41, and a second region 42, and the antistatic agent in the first region 41. When the content of the antistatic agent in the second region 42 is B [% by weight] and the content of the antistatic agent in the third region 43 is C [% by weight]. , A <C ≦ B, which satisfies the relationship that static electricity is generated in the semiconductor wafer 7 at the time of attaching the semiconductor wafer, and the silicon wafer is individually attached by using a blade. The results show that it is possible to accurately suppress or prevent the generation of substrate scraps on the adhesive tape for attaching the substrate when it is separated.

On the other hand, in the adhesive tape for attaching the substrate in each comparative example, the formation of the third region 43 in the base material 4 is omitted, and the like, which does not satisfy the relationship A <C ≦ B. , It is not possible to suppress the generation of static electricity on the semiconductor wafer 7 when the semiconductor wafer is attached, or when the silicon wafer is fragmented using a blade, the base material scraps on the substrate adhesive tape are used. The result that occurs is shown.

1 Separator 2 Adhesive layer 4 Base material 41 1st area 42 2nd area 43 3rd area 7 Wafer for semiconductor 9 Wafering 10 Semiconductor device 20 Semiconductor chip 21 Electrode pad 22 Wire 30 Die pad 40 Lead 50 Mold part 60 Adhesive layer 100 Substrate Adhesive tape for sticking (adhesive tape)
121 Perimeter 122 Central

Claims (16)

A base material and an adhesive layer laminated on one surface of the base material are provided, and the substrate is fixed on the pressure-sensitive adhesive layer so as to reach halfway from the substrate in the thickness direction of the base material. An adhesive tape for attaching a substrate, which is used when the substrate is separated into individual pieces by cutting with a cutting device.
The base material contains a polyolefin resin and an antistatic agent, and the third region and the first region on the side where the cutting device penetrates at the time of individualization and the adhesive layer in the first region are It has a second region located on the opposite side, and the third region, the first region, and the second region are laminated in this order.
The content of the antistatic agent in the first region is A [% by weight], the content of the antistatic agent in the second region is B [% by weight], and the content of the antistatic agent in the third region is An adhesive tape for attaching a substrate, which satisfies the relationship of A <C ≦ B when the content is C [% by weight]. The surface resistivity of the one surface side in the first region is L [Ω / □], the surface resistivity of the one surface side in the second region is M [Ω / □], and the third region. The adhesive tape for attaching a substrate according to claim 1, wherein when the surface resistivity on one surface side of the above is N [Ω / □], the relationship of L> N ≧ M is satisfied. The adhesive tape for attaching a substrate according to claim 1 or 2, wherein the surface resistivity N on one surface side in the third region is 1.0 × 10 ^{12 (Ω / □) or less.} The adhesive tape for attaching a substrate according to any one of claims 1 to 3, wherein the surface resistivity L on one surface side in the first region is more than 1.0 × 10 ^{12 (Ω / □).} The adhesive tape for attaching a substrate according to any one of claims 1 to 4, wherein the surface resistivity M on one surface side in the second region is 1.0 × 10 ^{12 (Ω / □) or less.} The substrate attachment according to any one of claims 1 to 5, wherein the antistatic agent is at least one of a conductive polymer, a permanent antistatic polymer (IDP), a metal oxide material, and carbon black. Adhesive tape for. The adhesive tape for attaching a substrate according to any one of claims 1 to 6, wherein the polyolefin resin is at least one of polypropylene, polyethylene, and a polyethylene copolymer. The adhesive tape for attaching a substrate according to any one of claims 1 to 7, wherein the adhesive layer contains an adhesive base resin. The adhesive tape for attaching a substrate according to claim 8, wherein the base resin is an acrylic resin. The adhesive layer further contains a curable resin that is cured by applying energy, and the application of energy reduces the adhesive force to the substrate laminated on the adhesive layer according to claim 8 or 9. Adhesive tape for attaching the substrate described in. The adhesive tape for attaching a substrate according to any one of claims 1 to 10, wherein the substrate is laminated on the adhesive layer. The substrate sticking adhesive tape width 20 mm, and affixed to the sections of length 4 6 inches or less in the silicon wafer inches or more, and left 3 hr, then, ultraviolet illuminance: 55W / cm ^2, the amount of ultraviolet irradiation: 200 mj / cm ^{After irradiating the adhesive layer with ultraviolet rays under the condition of 2} , hold one end of the adhesive tape for attaching the substrate and peel it off at a rate of 300 mm / min in the direction of 180 ° under the conditions of a temperature of 24 ° C. and a humidity of 40% Rh. The adhesive tape for attaching a substrate according to any one of claims 1 to 11, wherein the peak potential measured on the silicon wafer at the time is 40 V or less. The adhesive tape for attaching a substrate according to any one of claims 1 to 12, wherein the base material has a thickness of 5 μm or more and 100 μm or less in the third region. The adhesive tape for attaching a substrate according to any one of claims 1 to 13, wherein the base material has a thickness of 3 μm or more and 100 μm or less in the first region. The adhesive tape for attaching a substrate according to any one of claims 1 to 14, wherein the base material has a thickness of 5 μm or more and 100 μm or less in the second region. A base material for adhesive tape
A base material for an adhesive tape and an adhesive layer laminated on one surface of the base material for the adhesive tape are provided, and the base material for the adhesive tape is attached to the base material for the adhesive tape in a state where the substrate is fixed on the adhesive layer. By cutting with a cutting device so that it reaches halfway in the thickness direction of the above, it is applied to the adhesive tape for attaching the substrate used when the substrate is individualized.
It contains a polyolefin resin and an antistatic agent, and is located on the side opposite to the adhesive layer of the first region and the third region and the first region on the side where the cutting device penetrates at the time of individualization. It has a second region, and the third region, the first region, and the second region are laminated in this order.
The content of the antistatic agent in the first region is A [% by weight], the content of the antistatic agent in the second region is B [% by weight], and the content of the antistatic agent in the third region is A base material for an adhesive tape, which satisfies the relationship of A <C ≦ B when the content is C [% by weight].

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