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- 238000003384 imaging method Methods 0.000 claims description 48
- 230000009466 transformation Effects 0.000 claims description 45
- 239000000758 substrate Substances 0.000 claims description 36
- 238000004519 manufacturing process Methods 0.000 claims description 20
- 239000011159 matrix material Substances 0.000 claims description 20
- 239000004065 semiconductor Substances 0.000 claims description 20
- 239000003550 marker Substances 0.000 claims description 15
- 239000002131 composite material Substances 0.000 claims description 7
- 238000006073 displacement reaction Methods 0.000 claims description 7
- 238000000034 method Methods 0.000 claims description 6
- 239000000853 adhesive Substances 0.000 claims description 5
- 230000001070 adhesive effect Effects 0.000 claims description 5
- 238000007689 inspection Methods 0.000 claims description 3
- 230000002194 synthesizing effect Effects 0.000 claims description 3
- 230000001131 transforming effect Effects 0.000 claims description 2
- 238000011179 visual inspection Methods 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 25
- PXFBZOLANLWPMH-UHFFFAOYSA-N 16-Epiaffinine Natural products C1C(C2=CC=CC=C2N2)=C2C(=O)CC2C(=CC)CN(C)C1C2CO PXFBZOLANLWPMH-UHFFFAOYSA-N 0.000 description 8
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- 239000013256 coordination polymer Substances 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 230000002123 temporal effect Effects 0.000 description 1
Description
複数の撮像画像の合成について図9から図15を用いて説明する。図9はイメージモザイキングと座標マッピングを説明する図である。図10はキャリブレーションプレートを用いたイメージモザイキングと座標変換を説明する模式図である。図11はディストーションを説明する図である。図12はアフィン変換および射影変換の変換行列の式を示す図である。図13は基板のターゲットモデルによるイメージモザイキングと座標変換を説明する図である。図14は多連リードフレームのタブ上にペースト状接着剤を塗布した状態を複数の撮像装置で撮像した画像であり、図14(a)は経時変異がない場合の撮像画像であり、図14(b)は経時変異がある場合の撮像画像である。図15は空間再補正を説明する図であり、図15(a)は空間再補正前の状態を示す図であり、図15(b)は空間再補正後の状態を示す図である。
Synthesis of a plurality of captured images will be described with reference to FIGS. 9 to 15. FIG. FIG. 9 is a diagram for explaining image mosaicing and coordinate mapping. FIG. 10 is a schematic diagram for explaining image mosaicing and coordinate transformation using a calibration plate. FIG. 11 is a diagram for explaining distortion. FIG. 12 is a diagram showing transformation matrix equations for affine transformation and projective transformation. FIG. 13 is a diagram for explaining image mosaicing and coordinate transformation using a substrate target model. FIG. 14 shows images of a state in which a paste adhesive is applied to tabs of a multiple lead frame, taken by a plurality of imaging devices, and FIG. (b) is a captured image when there is a time-lapse variation. 15A and 15B are diagrams for explaining spatial re-correction, FIG. 15A is a diagram showing a state before spatial re-correction, and FIG. 15B is a diagram showing a state after spatial re-correction.
上記(A)について図9から図12を用いて説明する。
図9に示すように、制御部CNTは、ダイボンディング装置の調整時に多連化された撮像装置の全ての撮像視野をカバーするスケールとなる座標マーカCMRKを映し、重複領域OVL範囲に入る座標マーカCMRKの同一交点IPを基準に画像を射影変換やアフィン変換等による座標変換をして、各撮像装置間の画像を滑らかにつなぎ合わせた一枚の画像(合成画像)を得る。ここで、座標マーカCMRKは、調整治具としてキャリブレーションプレートを用意し、そのプレートにマーキングして用いるものであり、座標マーカCMRKは例えば格子状のものである。座標変換時は全体の空間の位置関係を保証するマーカが必要になる。図9に示すような合成視野全体をカバーする座標マーカCMRKがあれば、射影変換等の座標変換時は全体の空間の位置関係を保証することができ、各交点ピッチで画像空間座標と実空間座標のマッチングは可能である。
The above (A) will be described with reference to FIGS. 9 to 12. FIG.
As shown in FIG. 9, the control unit CNT projects a coordinate marker CMRK, which is a scale covering all the imaging fields of the multiple imaging devices during adjustment of the die bonding apparatus, and a coordinate marker that falls within the range of the overlapping area OVL. A single image (composite image) is obtained by smoothly connecting the images of the imaging devices by subjecting the image to coordinate transformation such as projective transformation or affine transformation based on the same intersection point IP of the CMRK. Here, the coordinate marker CMRK is used by marking a calibration plate prepared as an adjustment jig and marking the plate, and the coordinate marker CMRK is, for example, a grid shape. During coordinate transformation, markers are required to guarantee the positional relationship of the entire space. If there is a coordinate marker CMRK that covers the entire synthetic field of view as shown in FIG. 9, the positional relationship in the entire space can be guaranteed during coordinate transformation such as projective transformation. Coordinate matching is possible.
まず、制御部CNTは、アフィン変換もしくは射影変換にて隣接する撮像装置のいずれかを基準にもう一方の撮像装置の画像の画素座標を変換する。ここでは例として基準画像が画像IV1、変換画像を画像IV2として説明する。変換は互いの変換される画像における交点IPの座標(黒点座標)が対応する基準画像における交点IPの座標(黒点座標)に合うよう、アフィン変換もしくは射影変換の変換行列の各パラメータを算出する。ここで、一般的に、アフィン変換の変換行列は図12の式(1)に示され、射影変換の行列式は図12の式(2)に示される。変換行列の算出には一般に三点の座標があればよいが、変換を一義的ではなく、格子状のマス目に相当する部分別に行うことでより正確な変換が可能になるため、マス目毎に変換を行うのが好ましい。
First, the control unit CNT transforms the pixel coordinates of the image of the other imaging device based on one of the adjacent imaging devices by affine transformation or projective transformation. Here, as an example, the reference image is the image IV1, and the conversion image is the image IV2. Transformation calculates each parameter of a transformation matrix of affine transformation or projective transformation so that the coordinates (black point coordinates) of the intersection point IP in the images to be transformed match the coordinates (black point coordinates) of the intersection point IP in the corresponding reference image. Here, in general, the transformation matrix of affine transformation is shown in equation (1) of FIG. 12, and the determinant of projective transformation is shown in equation (2) of FIG. In general, it is sufficient to have the coordinates of three points to calculate the transformation matrix. It is preferable to convert to
座標合わせは画素座標系にて行うため、画像IV2の変換後の座標は整数値になることを求められるが、アフィン変換や射影変換にて変換された画素は、必ずその場所に収まるわけではなく、変換後座標が中間の値になる場合がある。そのような時は変換後の画像の各座標は、近接する変換後の座標の濃淡値からニアレストネイバー法やバイリニア法、バイキュービック法などで代表される濃淡値補間を行う。
Coordinates are aligned in the pixel coordinate system, so the coordinates of image IV2 after transformation are required to be integer values. , the converted coordinates may be intermediate values. In such a case, each coordinate of the image after conversion is subjected to gray value interpolation represented by the nearest neighbor method, bilinear method, bicubic method, etc. from the gray value of the adjacent coordinates after conversion.
この変位を検出した際に、制御部CNTは基板S上の位置決め用ターゲットマークTM等の特徴マーカを用いて画像を合成変換する射影変換行列やアフィン変換行列を再計算する。このとき、求めた射影変換行列やアフィン変換行列は画像のつなぎ合わせはできるが、図15(a)に示すように、画像空間と実空間のマッチングができていない状態になる場合がある。そのため、制御部CNTは最初に測定していたシュートSCT上のマーカSMRKを用いて、その座標を基準に再変換を行う。これにより、図15(b)に示すような合成画像を得る。
When this displacement is detected, the control unit CNT recalculates the projective transformation matrix and the affine transformation matrix for synthesizing and transforming the image using the characteristic marker such as the positioning target mark TM on the substrate S. FIG. At this time, the obtained projective transformation matrix and affine transformation matrix can connect images, but as shown in FIG. 15(a), the image space and real space may not be matched. Therefore, the control unit CNT uses the marker SMRK on the chute SCT that was measured first, and performs retransformation based on the coordinates. As a result, a synthesized image as shown in FIG. 15(b) is obtained.
制御部CNTは、高さ変位に対応するため、キャリブレーションプレートCPを上下に微動させて、高さ毎に射影変換行列を得る。制御部CNTは既知の基板の厚さやペースト高さ、ダイ厚などからアライメントパターン位置や検査視野位置の予想高さを算出し、高さ毎に保持しているどの射影変換行列を用いるか自動選択する。制御部CNTは隣接する撮像装置間の重複領域にて基板上の同一ポイントの認識を行い、高さを測定する。制御部CNTはその測定値から使用する射影変換行列を自動選択する。
In order to deal with height displacement, the control unit CNT finely moves the calibration plate CP up and down to obtain a projective transformation matrix for each height. The control unit CNT calculates the expected height of the alignment pattern position and inspection field position from known substrate thickness, paste height, die thickness, etc., and automatically selects which projection transformation matrix to use for each height. do. The control unit CNT recognizes the same point on the substrate in the overlapping area between adjacent imaging devices and measures the height. The control unit CNT automatically selects the projective transformation matrix to be used from the measured values.
Claims (23)
前記搬送路の上方に前記基板の幅方向に沿って一列に固定配設された複数の撮像装置と、
前記基板の上に位置する前記幅方向に沿った一列の複数のアタッチメント領域を前記複数の撮像装置で撮像して複数の画像を取得し、取得した複数の前記画像に基づいて合成画像を生成し、前記合成画像に基づいて前記アタッチメント領域の撮像対象物を認識するよう構成される制御部と、
を備え、
各撮像装置の撮像視野は前記基板の上で重複し、重複した前記撮像視野は前記アタッチメント領域よりも大きく構成されるダイボンディング装置。 a transport path for transporting the substrate;
a plurality of imaging devices fixedly arranged in a row above the transport path along the width direction of the substrate;
A plurality of attachment regions arranged in a row along the width direction and positioned on the substrate are imaged by the plurality of imaging devices to obtain a plurality of images, and a composite image is generated based on the plurality of the obtained images. a controller configured to recognize an imaging target in the attachment area based on the composite image;
with
The die bonding apparatus according to claim 1, wherein imaging fields of view of respective imaging devices overlap on the substrate, and the overlapping imaging fields of view are larger than the attachment area.
前記制御部は、重複した前記撮像視野に位置する座標マーカに基づいて前記合成画像を生成するよう構成されるダイボンディング装置。 The die bonding apparatus of claim 1,
The die bonding apparatus, wherein the controller is configured to generate the composite image based on coordinate markers located in the overlapping imaging fields.
前記座標マーカは全ての前記撮像装置の視野をカバーする格子状のスケールであり、
前記制御部は、前記座標マーカを映し、重複した前記撮像視野に入る前記座標マーカの同一交点を基準に画像を射影変換して、各撮像装置間の画像をつなぎ合わせて前記合成画像を生成するよう構成されるダイボンディング装置。 In the die bonding apparatus of claim 2,
the coordinate marker is a grid-like scale covering the field of view of all the imaging devices;
The control unit displays the coordinate markers, performs projective transformation on the image with reference to the same intersection of the coordinate markers in the overlapping imaging fields, and joins the images of the imaging devices to generate the composite image. A die bonding apparatus configured as follows.
前記搬送路は、前記基板の幅方向の両端の外側にそれぞれ複数の基準マーカを有し、
前記基板は所定の間隔で配置される複数のタブを有し、
前記制御部は、前記タブの間隔または前記基準マーカの間隔を前記撮像装置で測定し、前記撮像装置間の変位を検出するように構成されるダイボンディング装置。 In the die bonding apparatus of claim 3,
the transport path has a plurality of reference markers outside both ends in the width direction of the substrate,
The substrate has a plurality of tabs arranged at predetermined intervals,
The die bonding apparatus, wherein the controller is configured to measure the interval between the tabs or the interval between the reference markers with the imaging device and detect the displacement between the imaging devices.
前記基板は、さらに、特徴マーカを有し、
前記制御部は、前記撮像装置間の変位を検出した場合、前記特徴マーカに基づいて画像を合成変換する射影変換行列を再計算するように構成されるダイボンディング装置。 In the die bonding apparatus of claim 4,
the substrate further comprises a characteristic marker;
The die bonding device, wherein the control unit is configured to recalculate a projective transformation matrix for synthesizing an image based on the characteristic marker when a displacement between the imaging devices is detected.
前記制御部は、予め測定していた前記基準マーカに基づいて、その座標を基準に前記射影変換行列を再計算するように構成されるダイボンディング装置。 In the die bonding apparatus of claim 5,
The control unit is configured to recalculate the projective transformation matrix based on the coordinates of the previously measured reference marker.
前記制御部は、前記基板を上下に微動させて、高さ毎に射影変換行列を求め、
前記基板の厚さまたはペースト高さまたはダイ厚からアライメントパターン位置または検査視野位置の予想高さを算出し、算出した予想高さに基づいて高さ毎に保持している前記射影変換行列の何れかを選択するように構成されるダイボンディング装置。 In the die bonding apparatus of claim 6,
The control unit finely moves the substrate up and down to obtain a projective transformation matrix for each height,
Calculate the expected height of the alignment pattern position or the inspection field position from the thickness of the substrate, the paste height, or the die thickness, and based on the calculated expected height, any of the projection transformation matrices held for each height A die bonding apparatus configured to select between:
前記制御部は、隣接する撮像装置間の重複した撮像視野において前記基板の上の同一ポイントの認識を行い、高さを測定し、測定された前記高さに基づいて高さ毎に保持している前記射影変換行列を選択するように構成されるダイボンディング装置。 In the die bonding apparatus of claim 7,
The control unit recognizes the same point on the substrate in an overlapping field of view between adjacent imaging devices, measures the height, and maintains each height based on the measured height. die bonding apparatus configured to select the projective transformation matrix.
さらに、複数の前記撮像装置のそれぞれに対応して設けられた複数の照明装置を備え、
前記制御部は、複数の前記照明装置を独立して調光するよう構成されるダイボンディング装置。 In the die bonding apparatus according to any one of claims 1 to 8,
Furthermore, comprising a plurality of lighting devices provided corresponding to each of the plurality of imaging devices,
The die bonding apparatus, wherein the controller is configured to independently dim the plurality of lighting devices.
前記制御部は、前記基板を当該基板の長さ方向に搬送して次の列の複数のアタッチメント領域を前記複数の撮像装置で撮像するよう構成されるダイボンディング装置。 In the die bonding apparatus according to any one of claims 1 to 8,
The control unit is a die bonding apparatus configured to convey the substrate in the length direction of the substrate and image the plurality of attachment regions in the next row with the plurality of imaging devices.
前記撮像対象物は前記基板に塗布されたペースト状接着剤であるダイボンディング装置。 In the die bonding apparatus according to any one of claims 1 to 8,
A die bonding apparatus, wherein the object to be imaged is a paste adhesive applied to the substrate.
前記制御部は前記撮像装置により前記基板に塗布されたペースト状接着剤の外観検査を行うよう構成されるダイボンディング装置。 The die bonding apparatus of claim 11, wherein
The die bonding apparatus, wherein the control unit is configured to perform a visual inspection of the paste adhesive applied to the substrate by the imaging device.
前記撮像対象物は前記基板または既にボンディングされたダイの上にボンディングされたダイであるダイボンディング装置。 In the die bonding apparatus according to any one of claims 1 to 8,
A die bonding apparatus, wherein the imaging object is a die bonded on the substrate or an already bonded die.
前記基板の上に位置する前記幅方向に沿った一列の複数の前記アタッチメント領域を前記複数の撮像装置で撮像して複数の画像を取得し、取得した複数の前記画像に基づいて合成画像を生成し、前記合成画像に基づいて前記アタッチメント領域の撮像対象物を認識する工程と、
前記基板を当該基板の長さ方向に搬送して次の列の複数のアタッチメント領域を前記複数の撮像装置で撮像する工程と、
を備える半導体装置の製造方法。 Corresponding to each of a transport path for transporting a substrate having a plurality of attachment areas, a plurality of imaging devices fixedly arranged in a row above the transport path along the width direction of the substrate, and the plurality of imaging devices and a plurality of lighting devices provided as a die bonding device, wherein the imaging field of view of each imaging device overlaps on the substrate, and the overlapping imaging field of view is larger than the attachment area. a step of loading the substrate;
A row of the attachment regions located on the substrate along the width direction is imaged by the plurality of imaging devices to obtain a plurality of images, and a composite image is generated based on the obtained plurality of images. and recognizing an object to be imaged in the attachment area based on the synthesized image;
a step of conveying the substrate in the length direction of the substrate and imaging a plurality of attachment regions in the next row with the plurality of imaging devices;
A method of manufacturing a semiconductor device comprising:
重複した前記撮像視野に位置する座標マーカに基づいて前記合成画像を生成する半導体装置の製造方法。 In the method of manufacturing a semiconductor device according to claim 14,
A method of manufacturing a semiconductor device, wherein the synthesized image is generated based on the coordinate markers located in the overlapping imaging fields.
前記座標マーカは全ての前記撮像装置の視野をカバーする格子状のスケールであり、
前記座標マーカを映し、重複した前記撮像視野に入る前記座標マーカの同一交点を基準に画像を射影変換して、各撮像装置間の画像をつなぎ合わせて前記合成画像を生成する半導体装置の製造方法。 In the method of manufacturing a semiconductor device according to claim 15,
the coordinate marker is a grid-like scale covering the field of view of all the imaging devices;
A method of manufacturing a semiconductor device, in which the coordinate markers are projected, an image is projectively transformed with reference to the same intersection of the coordinate markers entering the overlapping imaging fields, and the images of the imaging devices are joined to generate the composite image. .
前記搬送路は、前記基板の幅方向の両端の外側にそれぞれ複数の基準マーカを有し、
前記基板は所定の間隔で配置される複数のタブを有し、
前記タブの間隔または前記基準マーカの間隔を前記撮像装置で測定し、前記撮像装置間の変位を検出する半導体装置の製造方法。 In the method of manufacturing a semiconductor device according to claim 16,
the transport path has a plurality of reference markers outside both ends in the width direction of the substrate,
The substrate has a plurality of tabs arranged at predetermined intervals,
A method of manufacturing a semiconductor device, wherein the distance between the tabs or the distance between the reference markers is measured by the imaging device, and the displacement between the imaging devices is detected.
前記基板は、さらに、特徴マーカを有し、
前記撮像装置間の変位を検出した場合、前記特徴マーカに基づいて画像を合成変換する射影変換行列を再計算する半導体装置の製造方法。 In the method of manufacturing a semiconductor device according to claim 17,
the substrate further comprises a characteristic marker;
A method of manufacturing a semiconductor device, wherein when a displacement between the imaging devices is detected, a projective transformation matrix for synthesizing and transforming an image is recalculated based on the characteristic marker.
予め測定していた前記基準マーカに基づいて、その座標を基準に前記射影変換行列を再計算する半導体装置の製造方法。 In the method of manufacturing a semiconductor device according to claim 18,
A method of manufacturing a semiconductor device, wherein the projective transformation matrix is recalculated based on the coordinates of the previously measured reference marker.
前記基板を上下に微動させて、高さ毎に射影変換行列を求め、
前記基板の厚さまたはペースト高さまたはダイ厚からアライメントパターン位置または検査視野位置の予想高さを算出し、算出した予想高さに基づいて高さ毎に保持している前記射影変換行列の何れかを選択する半導体装置の製造方法。 In the method of manufacturing a semiconductor device according to claim 19,
Finely move the substrate up and down to obtain a projective transformation matrix for each height,
Calculate the expected height of the alignment pattern position or the inspection field position from the thickness of the substrate, the paste height, or the die thickness, and based on the calculated expected height, any of the projection transformation matrices held for each height A manufacturing method of a semiconductor device to select.
隣接する撮像装置間の重複した撮像視野において前記基板の上の同一ポイントの認識を行い、高さを測定し、測定された前記高さに基づいて高さ毎に保持している前記射影変換行列を選択する半導体装置の製造方法。 In the method of manufacturing a semiconductor device according to claim 20,
recognizing the same point on the substrate in an overlapping field of view between adjacent imaging devices, measuring the height, and maintaining the projective transformation matrix for each height based on the measured height; A method of manufacturing a semiconductor device that selects
さらに、前記基板にペースト状接着剤を塗布する工程を備え、
前記撮像対象物は塗布された前記ペースト状接着剤である半導体装置の製造方法。 In the method for manufacturing a semiconductor device according to any one of claims 14 to 21,
Furthermore, it comprises a step of applying a paste adhesive to the substrate,
A method of manufacturing a semiconductor device, wherein the object to be imaged is the applied paste adhesive.
さらに、前記基板または既にボンディングされたダイの上にダイをボンディングする工程を備え、
前記撮像対象物はボンディングされた前記ダイである半導体装置の製造方法。 In the method for manufacturing a semiconductor device according to any one of claims 14 to 21,
further comprising bonding a die onto the substrate or an already bonded die;
A method of manufacturing a semiconductor device, wherein the object to be imaged is the bonded die.
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
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JP2020039656A JP7373436B2 (en) | 2020-03-09 | 2020-03-09 | Die bonding equipment and semiconductor device manufacturing method |
TW110100795A TWI798619B (en) | 2020-03-09 | 2021-01-08 | Die bonding device and method for manufacturing semiconductor device |
CN202110219292.8A CN113380661B (en) | 2020-03-09 | 2021-02-26 | Chip mounting apparatus and method for manufacturing semiconductor device |
KR1020210028766A KR102506283B1 (en) | 2020-03-09 | 2021-03-04 | Die bonding apparatus and manufacturing method of semiconductor apparatus |
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JPH08316259A (en) * | 1995-05-15 | 1996-11-29 | Rohm Co Ltd | Method and apparatus for wire bonding of semiconductor product |
JP4596422B2 (en) * | 2005-05-20 | 2010-12-08 | キヤノンマシナリー株式会社 | Imaging device for die bonder |
JP2008170298A (en) | 2007-01-12 | 2008-07-24 | Oki Electric Ind Co Ltd | Visual inspecting device and visual inspection method |
JP4844431B2 (en) | 2007-03-01 | 2011-12-28 | パナソニック株式会社 | Electronic component mounting apparatus and information code reading method in electronic component mounting apparatus |
US20110175997A1 (en) | 2008-01-23 | 2011-07-21 | Cyberoptics Corporation | High speed optical inspection system with multiple illumination imagery |
MY169616A (en) * | 2009-02-06 | 2019-04-23 | Agency Science Tech & Res | Methods for examining a bonding structure of a substrate and bonding structure inspection devices |
WO2011037905A1 (en) * | 2009-09-22 | 2011-03-31 | Cyberoptics Corporation | High speed, high resolution, three dimensional solar cell inspection system |
JP5421967B2 (en) * | 2011-09-07 | 2014-02-19 | 東京エレクトロン株式会社 | Joining method, program, computer storage medium, and joining system |
JP2013172011A (en) | 2012-02-21 | 2013-09-02 | Panasonic Corp | Component mounting device, imaging device, and imaging method |
JP2013187509A (en) * | 2012-03-09 | 2013-09-19 | Seiko Epson Corp | Positional information acquiring method of mounting members, positional information acquiring device of the same and manufacturing method of electronic device |
JP6022782B2 (en) | 2012-03-19 | 2016-11-09 | ファスフォードテクノロジ株式会社 | Die bonder |
JP6219838B2 (en) * | 2012-11-02 | 2017-10-25 | 富士機械製造株式会社 | Component mounter |
JP2014203917A (en) * | 2013-04-03 | 2014-10-27 | 株式会社ディスコ | Plate-like material |
JP2014216621A (en) | 2013-04-30 | 2014-11-17 | 株式会社日立製作所 | Substrate processing apparatus and substrate processing method |
JP6435099B2 (en) | 2014-02-26 | 2018-12-05 | Juki株式会社 | Electronic component mounting apparatus and electronic component mounting method |
JP6818608B2 (en) * | 2017-03-28 | 2021-01-20 | ファスフォードテクノロジ株式会社 | Manufacturing method of die bonding equipment and semiconductor equipment |
KR102327786B1 (en) * | 2017-10-26 | 2021-11-17 | 가부시키가이샤 신가와 | bonding device |
JP6976205B2 (en) | 2018-03-19 | 2021-12-08 | 東レエンジニアリング株式会社 | Chip position measuring device |
JP7018341B2 (en) * | 2018-03-26 | 2022-02-10 | ファスフォードテクノロジ株式会社 | Manufacturing method of die bonding equipment and semiconductor equipment |
JP7161870B2 (en) * | 2018-06-27 | 2022-10-27 | ファスフォードテクノロジ株式会社 | Die bonder and semiconductor device manufacturing method |
JP7102271B2 (en) * | 2018-07-17 | 2022-07-19 | ファスフォードテクノロジ株式会社 | Semiconductor manufacturing equipment and manufacturing method of semiconductor equipment |
JP7105135B2 (en) * | 2018-08-17 | 2022-07-22 | 東京エレクトロン株式会社 | PROCESSING CONDITIONS CORRECTION METHOD AND SUBSTRATE PROCESSING SYSTEM |
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