JP2021114496A5 - - Google Patents
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- Publication number
- JP2021114496A5 JP2021114496A5 JP2020005312A JP2020005312A JP2021114496A5 JP 2021114496 A5 JP2021114496 A5 JP 2021114496A5 JP 2020005312 A JP2020005312 A JP 2020005312A JP 2020005312 A JP2020005312 A JP 2020005312A JP 2021114496 A5 JP2021114496 A5 JP 2021114496A5
- Authority
- JP
- Japan
- Prior art keywords
- nitride semiconductor
- insulating film
- layer
- semiconductor layer
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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- 239000004065 semiconductor Substances 0.000 claims description 411
- 150000004767 nitrides Chemical class 0.000 claims description 404
- 238000003860 storage Methods 0.000 claims description 76
- 239000003990 capacitor Substances 0.000 claims description 74
- 238000002347 injection Methods 0.000 claims description 38
- 239000007924 injection Substances 0.000 claims description 38
- 238000000034 method Methods 0.000 claims description 29
- 239000012535 impurity Substances 0.000 claims description 27
- 230000008878 coupling Effects 0.000 claims description 22
- 238000010168 coupling process Methods 0.000 claims description 22
- 238000005859 coupling reaction Methods 0.000 claims description 22
- 230000000903 blocking effect Effects 0.000 claims description 21
- 238000009825 accumulation Methods 0.000 claims description 17
- 230000010287 polarization Effects 0.000 claims description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 14
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 14
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 11
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 11
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 9
- 239000000969 carrier Substances 0.000 claims description 7
- 229910000449 hafnium oxide Inorganic materials 0.000 claims description 4
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 claims description 4
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims description 4
- 229910001928 zirconium oxide Inorganic materials 0.000 claims description 4
- 230000000149 penetrating effect Effects 0.000 claims description 3
- 238000010791 quenching Methods 0.000 claims 2
- 230000000171 quenching effect Effects 0.000 claims 2
- 239000010410 layer Substances 0.000 description 448
- 239000000758 substrate Substances 0.000 description 60
- 239000002772 conduction electron Substances 0.000 description 57
- 230000005641 tunneling Effects 0.000 description 23
- 229910002704 AlGaN Inorganic materials 0.000 description 21
- 239000013078 crystal Substances 0.000 description 14
- 230000008569 process Effects 0.000 description 14
- 230000015572 biosynthetic process Effects 0.000 description 10
- 239000000463 material Substances 0.000 description 10
- 239000007772 electrode material Substances 0.000 description 8
- 230000005669 field effect Effects 0.000 description 7
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 6
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 6
- 230000005533 two-dimensional electron gas Effects 0.000 description 6
- 210000000746 body region Anatomy 0.000 description 5
- 238000000151 deposition Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- 238000004088 simulation Methods 0.000 description 5
- 230000015556 catabolic process Effects 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 238000001312 dry etching Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 230000005527 interface trap Effects 0.000 description 4
- 229910052759 nickel Inorganic materials 0.000 description 4
- 229910052763 palladium Inorganic materials 0.000 description 4
- 229910052697 platinum Inorganic materials 0.000 description 4
- 238000001039 wet etching Methods 0.000 description 4
- 230000005516 deep trap Effects 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000005121 nitriding Methods 0.000 description 3
- 238000005381 potential energy Methods 0.000 description 3
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000001737 promoting effect Effects 0.000 description 2
- 230000002269 spontaneous effect Effects 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000000779 depleting effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000004941 influx Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2020005312A JP2021114496A (ja) | 2020-01-16 | 2020-01-16 | 縦型窒化物半導体トランジスタ装置 |
| TW109134516A TWI789636B (zh) | 2020-01-16 | 2020-10-06 | 縱向氮化物半導體電晶體裝置 |
| CN202011230488.9A CN113140629B (zh) | 2020-01-16 | 2020-11-06 | 纵向氮化物半导体晶体管装置 |
| US17/143,144 US11489050B2 (en) | 2020-01-16 | 2021-01-06 | Vertical nitride semiconductor transistor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2020005312A JP2021114496A (ja) | 2020-01-16 | 2020-01-16 | 縦型窒化物半導体トランジスタ装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2021114496A JP2021114496A (ja) | 2021-08-05 |
| JP2021114496A5 true JP2021114496A5 (https=) | 2022-09-06 |
Family
ID=76809872
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2020005312A Pending JP2021114496A (ja) | 2020-01-16 | 2020-01-16 | 縦型窒化物半導体トランジスタ装置 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US11489050B2 (https=) |
| JP (1) | JP2021114496A (https=) |
| CN (1) | CN113140629B (https=) |
| TW (1) | TWI789636B (https=) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7398885B2 (ja) * | 2019-05-30 | 2023-12-15 | ローム株式会社 | 窒化物半導体装置およびその製造方法 |
| US12513934B2 (en) * | 2020-10-26 | 2025-12-30 | Kabushiki Kaisha Toshiba | Semiconductor device |
| US12218232B2 (en) * | 2021-08-25 | 2025-02-04 | Kabushiki Kaisha Toshiba | Semiconductor device including compound and nitride members |
| JP7702345B2 (ja) * | 2021-12-22 | 2025-07-03 | 信一郎 高谷 | 電界効果型トランジスタ装置 |
| CN114551584A (zh) * | 2022-04-22 | 2022-05-27 | 绍兴中芯集成电路制造股份有限公司 | 氮化镓基异质结场效应晶体管及其制造方法 |
| DE112022007260T5 (de) * | 2022-05-19 | 2025-03-13 | Sumitomo Electric Industries, Ltd. | Halbleiterchip |
| JPWO2023223588A1 (https=) * | 2022-05-19 | 2023-11-23 | ||
| DE102022209800A1 (de) | 2022-09-19 | 2024-03-21 | Robert Bosch Gesellschaft mit beschränkter Haftung | Halbleiterelemente mit Feldabschirmung durch Polarisationsdotierung |
| JPWO2024116612A1 (https=) * | 2022-11-30 | 2024-06-06 |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004260044A (ja) * | 2003-02-27 | 2004-09-16 | Innotech Corp | トランジスタとそれを用いた半導体メモリ |
| JP5122165B2 (ja) * | 2007-03-20 | 2013-01-16 | 株式会社豊田中央研究所 | 半導体装置とその製造方法 |
| TW200849494A (en) * | 2007-06-08 | 2008-12-16 | Nanya Technology Corp | Vertical NROM cell and method for fabricating the same |
| CN103189992A (zh) * | 2010-11-04 | 2013-07-03 | 住友电气工业株式会社 | 半导体器件及其制造方法 |
| JP6035007B2 (ja) * | 2010-12-10 | 2016-11-30 | 富士通株式会社 | Ｍｉｓ型の窒化物半導体ｈｅｍｔ及びその製造方法 |
| US10312361B2 (en) * | 2011-06-20 | 2019-06-04 | The Regents Of The University Of California | Trenched vertical power field-effect transistors with improved on-resistance and breakdown voltage |
| WO2012177699A1 (en) | 2011-06-20 | 2012-12-27 | The Regents Of The University Of California | Current aperture vertical electron transistors |
| US8772144B2 (en) * | 2011-11-11 | 2014-07-08 | Alpha And Omega Semiconductor Incorporated | Vertical gallium nitride Schottky diode |
| JP5646569B2 (ja) * | 2012-09-26 | 2014-12-24 | 株式会社東芝 | 半導体装置 |
| TWI517475B (zh) * | 2013-03-28 | 2016-01-11 | 南臺科技大學 | 垂直式氮化物發光二極體的製造方法 |
| KR20150007546A (ko) * | 2013-07-11 | 2015-01-21 | 서울반도체 주식회사 | p형 갈륨나이트라이드 전류장벽층을 갖는 수직형 트랜지스터 및 그 제조방법 |
| JP2015079806A (ja) * | 2013-10-16 | 2015-04-23 | 三菱電機株式会社 | へテロ接合電界効果型トランジスタおよびその製造方法 |
| JP6260435B2 (ja) * | 2014-04-25 | 2018-01-17 | 株式会社デンソー | 半導体装置およびその製造方法 |
| JP2016066641A (ja) * | 2014-09-22 | 2016-04-28 | 株式会社東芝 | 半導体装置及び半導体装置の製造方法 |
| JP6444789B2 (ja) * | 2015-03-24 | 2018-12-26 | 株式会社東芝 | 半導体装置及びその製造方法 |
| JP2017123383A (ja) * | 2016-01-06 | 2017-07-13 | 白田 理一郎 | 窒化物半導体トランジスタ装置 |
| GB2547661A (en) * | 2016-02-24 | 2017-08-30 | Jiang Quanzhong | Layered vertical field effect transistor and methods of fabrication |
-
2020
- 2020-01-16 JP JP2020005312A patent/JP2021114496A/ja active Pending
- 2020-10-06 TW TW109134516A patent/TWI789636B/zh active
- 2020-11-06 CN CN202011230488.9A patent/CN113140629B/zh active Active
-
2021
- 2021-01-06 US US17/143,144 patent/US11489050B2/en active Active
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