JP2021086888A - 酸化物半導体を用いた薄膜トランジスタ、及び、それを用いた半導体装置 - Google Patents
酸化物半導体を用いた薄膜トランジスタ、及び、それを用いた半導体装置 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 157
- 239000010409 thin film Substances 0.000 title claims description 14
- 239000010408 film Substances 0.000 claims description 214
- 239000000758 substrate Substances 0.000 claims description 45
- 238000005468 ion implantation Methods 0.000 claims description 39
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 27
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 27
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 16
- 239000001301 oxygen Substances 0.000 claims description 16
- 229910052760 oxygen Inorganic materials 0.000 claims description 16
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 15
- 229910052751 metal Inorganic materials 0.000 claims description 15
- 239000002184 metal Substances 0.000 claims description 15
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 15
- 230000002950 deficient Effects 0.000 claims description 10
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 7
- 229910052796 boron Inorganic materials 0.000 claims description 7
- 150000002500 ions Chemical class 0.000 claims description 7
- 238000005549 size reduction Methods 0.000 abstract 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 32
- 239000001257 hydrogen Substances 0.000 description 32
- 229910052739 hydrogen Inorganic materials 0.000 description 32
- 239000004973 liquid crystal related substance Substances 0.000 description 32
- 239000011229 interlayer Substances 0.000 description 28
- 239000010410 layer Substances 0.000 description 27
- 230000001133 acceleration Effects 0.000 description 13
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- 239000011159 matrix material Substances 0.000 description 6
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- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
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- 238000002834 transmittance Methods 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
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- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 239000003566 sealing material Substances 0.000 description 2
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- 239000010936 titanium Substances 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 229910018575 Al—Ti Inorganic materials 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- 241001101998 Galium Species 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- -1 Zinc Oxide Nitride Chemical class 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- HKBLLJHFVVWMTK-UHFFFAOYSA-N alumane;titanium Chemical compound [AlH3].[Ti].[Ti] HKBLLJHFVVWMTK-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000000779 depleting effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
- TYHJXGDMRRJCRY-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) tin(4+) Chemical compound [O-2].[Zn+2].[Sn+4].[In+3] TYHJXGDMRRJCRY-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
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- H—ELECTRICITY
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78633—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device with a light shield
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Abstract
Description
Vd=Vs=GND,TFTの背面から照射する光量は、4500cd/m2において、3600秒試験を行った場合である。図11において、横軸はVgs(V)であり、縦軸はIds(A)である。図11に示すように、加速試験前後におけるVthの変化は−5.28Vであり、比較的大きい値である。
本発明は、マイクロLEDを用いた表示装置に適用することも可能である。また、図2において、酸化物半導体膜109は、ドレイン電極 110を介して映像信号線12に接続しており、ソース電極111を介してコンタクト電極122に接続する構成となっている。しかし、それに限定されることなく、コンタクトホール130を介して映像信号線を酸化物半導体膜に接続し、コンタクトホール131を介してコンタクト電極122を酸化物半導体膜に接続される構成であってもよい。この場合、映像信号線がドレイン電極となり、コンタクト電極がソース電極を兼ねることとなる。
Claims (9)
- 酸化物半導体と、
ゲート電極と、
前記酸化物半導体と前記ゲート電極との間のゲート絶縁膜と、を備え、
前記酸化物半導体は、前記ゲート電極に対応したチャネル領域と、前記チャネル領域に隣接したソース領域とドレイン領域とを有し、
チャネル長は1.3乃至2.3μmであり、
前記ドレイン領域及びソース領域のシート抵抗は、1.4KΩ/□乃至20KΩ/□であることを特徴とする薄膜トランジスタ。 - 前記ドレイン領域と前記ソース領域とのシート抵抗は、3KΩ/□乃至10KΩ/□であることを特徴とする請求項1に記載の薄膜トランジスタ。
- 前記ゲート絶縁膜はシリコン酸化膜であり、前記ドレイン領域及び前記ソース領域は前記ゲート絶縁膜によって覆われていることを特徴とする請求項1または2に記載の薄膜トランジスタ。
- 前記ドレイン領域及び前記ソース領域は、イオンインプランテーションにより、イオンがドーズされていることを特徴とする請求項1乃至3の何れか一項に記載の薄膜トランジスタ。
- 前記ドレイン領域及びソース領域は、イオンインプランテーションにより、ボロン(B)がドーズされていることを特徴とする請求項4に記載の薄膜トランジスタ。
- 前記ドレイン領域及びソース領域は、イオンインプランテーションにより、酸素欠乏部が形成されていることを特徴とする請求項1乃至5の何れか一項に記載の薄膜トランジスタ。
- 基板と、
基板上に形成された酸化物半導体と、
前記酸化物半導体上に形成された第1絶縁膜と、
前記絶縁膜上に設けられた金属層と、
前記酸化物半導体に電気的に接続されるソース電極とドレイン電極と、
前記第1絶縁膜と前記金属層との上に形成された第2絶縁膜とを備え、
前記酸化物半導体は、前記金属層に対応したチャネル領域と、前記チャネル領域に隣接し、前記ソース電極と電気的に接続するソース領域と、前記チャネル領域に隣接し、前記ドレイン電極と電気的に接続するドレイン領域とを有し、
チャネル長は1.3乃至2.3μmであり、
前記ドレイン領域及びソース領域のシート抵抗は、1.4KΩ/□乃至20KΩ/□であることを特徴とする半導体装置。 - 前記第1絶縁膜はシリコン酸化膜であり、前記第2絶縁膜はシリコン窒化膜を含むことを特徴とする請求項7に記載の半導体装置。
- 前記第2絶縁膜は2層構成であり、前記基板側がシリコン窒化膜であり、前記シリコン窒化膜の上層がシリコン酸化膜であることを特徴とする請求項8に記載の半導体装置。
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JP2019213622A JP2021086888A (ja) | 2019-11-26 | 2019-11-26 | 酸化物半導体を用いた薄膜トランジスタ、及び、それを用いた半導体装置 |
PCT/JP2020/035726 WO2021106336A1 (ja) | 2019-11-26 | 2020-09-23 | 酸化物半導体を用いた薄膜トランジスタ、及び、それを用いた半導体装置 |
US17/724,512 US20220246764A1 (en) | 2019-11-26 | 2022-04-20 | Thin film transistor using oxide semiconductor, and semiconductor device including the same |
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Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013110176A (ja) * | 2011-11-18 | 2013-06-06 | Semiconductor Energy Lab Co Ltd | 半導体装置および半導体装置の作製方法 |
JP2015198223A (ja) * | 2014-04-03 | 2015-11-09 | 株式会社ジャパンディスプレイ | 表示装置およびその製造方法 |
JP2016027597A (ja) * | 2013-12-06 | 2016-02-18 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JP2017028252A (ja) * | 2015-05-22 | 2017-02-02 | 株式会社半導体エネルギー研究所 | 半導体装置、該半導体装置を有する表示装置 |
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- 2020-09-23 WO PCT/JP2020/035726 patent/WO2021106336A1/ja active Application Filing
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Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2013110176A (ja) * | 2011-11-18 | 2013-06-06 | Semiconductor Energy Lab Co Ltd | 半導体装置および半導体装置の作製方法 |
JP2016027597A (ja) * | 2013-12-06 | 2016-02-18 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JP2015198223A (ja) * | 2014-04-03 | 2015-11-09 | 株式会社ジャパンディスプレイ | 表示装置およびその製造方法 |
JP2017028252A (ja) * | 2015-05-22 | 2017-02-02 | 株式会社半導体エネルギー研究所 | 半導体装置、該半導体装置を有する表示装置 |
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