JP2021082728A - 成膜方法および成膜装置 - Google Patents
成膜方法および成膜装置 Download PDFInfo
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- JP2021082728A JP2021082728A JP2019209627A JP2019209627A JP2021082728A JP 2021082728 A JP2021082728 A JP 2021082728A JP 2019209627 A JP2019209627 A JP 2019209627A JP 2019209627 A JP2019209627 A JP 2019209627A JP 2021082728 A JP2021082728 A JP 2021082728A
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- 238000000034 method Methods 0.000 title claims abstract description 54
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- 230000001590 oxidative effect Effects 0.000 claims description 13
- 150000001875 compounds Chemical class 0.000 claims description 9
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- 238000010438 heat treatment Methods 0.000 claims description 4
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- 229910052802 copper Inorganic materials 0.000 claims description 2
- 229910052733 gallium Inorganic materials 0.000 claims description 2
- 229910052732 germanium Inorganic materials 0.000 claims description 2
- 229910052738 indium Inorganic materials 0.000 claims description 2
- 229910052742 iron Inorganic materials 0.000 claims description 2
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- 229910052748 manganese Inorganic materials 0.000 claims description 2
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- 229910052702 rhenium Inorganic materials 0.000 claims description 2
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- 229910052707 ruthenium Inorganic materials 0.000 claims description 2
- 229910052706 scandium Inorganic materials 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 229910052712 strontium Inorganic materials 0.000 claims description 2
- 229910052715 tantalum Inorganic materials 0.000 claims description 2
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- JIGXARPLYFNBCG-UHFFFAOYSA-N C1(C=CC=C1)[Hf](N(C)C)(N(C)C)N(C)C Chemical compound C1(C=CC=C1)[Hf](N(C)C)(N(C)C)N(C)C JIGXARPLYFNBCG-UHFFFAOYSA-N 0.000 description 3
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- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
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- AWFPGKLDLMAPMK-UHFFFAOYSA-N dimethylaminosilicon Chemical compound CN(C)[Si] AWFPGKLDLMAPMK-UHFFFAOYSA-N 0.000 description 2
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- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
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- ZYLGGWPMIDHSEZ-UHFFFAOYSA-N dimethylazanide;hafnium(4+) Chemical compound [Hf+4].C[N-]C.C[N-]C.C[N-]C.C[N-]C ZYLGGWPMIDHSEZ-UHFFFAOYSA-N 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 1
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- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- PDPJQWYGJJBYLF-UHFFFAOYSA-J hafnium tetrachloride Chemical compound Cl[Hf](Cl)(Cl)Cl PDPJQWYGJJBYLF-UHFFFAOYSA-J 0.000 description 1
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
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- H01L21/02219—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and nitrogen
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- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
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Abstract
Description
最初に、成膜方法の実施形態について説明する。
[第1の実施形態]
図1は、第1の実施形態に係る成膜方法を概略的に示すフローチャート、図2は、第1の実施形態に係る成膜方法のガス供給タイミングを示すタイミングチャートである。
ここでは、実際に従来の方法と本実施例の方法でAOx膜とBOx膜の混合膜を成膜した場合の混合膜中のB濃度を求めた。具体的には、元素AとしてHfを用い、元素BとしてSiを用いて、HfO2膜とSiO2膜の混合膜を成膜した。このとき、Hf原料ガスとしてトリ(ジメチルアミノ)シクロペンタジエニルハフニウムを用い、Si原料ガスとしてアミノシラン化合物を用い、酸化ガスとしてオゾンを用い、パージガスとしてN2ガスを用いた。また、温度を250〜500℃、圧力を100〜1000Paの範囲としした。図4は、この際のAOx膜の繰り返し比率(X/(X+Y))を横軸にとり、縦軸に混合膜中の元素Bの濃度(at%)をとってこれらの関係を示す図である。実線でつないだ●で示すプロットは従来の方法の場合であり、■で示すプロットは本実施形態の方法の場合である。従来の方法では、AOx膜の繰り返し比率が大きいほど元素Bの濃度は減少するが、繰り返し比率が0.95(X=19、Y=1)でも元素Bの濃度が10at%程度と高い値である。したがって、元素Bの濃度を数%程度まで低くしようとすると、繰り返し比率を限りなく1に近づける(すなわち、サイクル数Xを限りなく増加させる)必要があることがわかる。これに対し、本実施形態の場合のプロットは、第1の膜のサイクル数X=6、第2の膜のサイクル数Y=1の場合で、AOx膜の繰り返し比率が0.857と小さい値であるが、それにもかかわらず元素Bの濃度が2at%と小さい値を示した。従来の方法では、繰り返し比率が同じ0.857で、元素Bの濃度が20at%程度となっており、本実施形態により、低い繰り返し比率でも、元素Bの濃度を低くできることがわかる。
図5は、第2の実施形態に係る成膜方法を概略的に示すフローチャート、図6は、第2の実施形態に係る成膜方法のガス供給タイミングを示すタイミングチャートである。
次に、上記第1の実施形態および第2の実施形態の成膜方法を実施するための成膜装置について説明する。
成膜装置100は、処理容器であるチャンバー1と、サセプタ(基板支持部材)2と、シャワーヘッド3と、排気部4と、ガス供給機構5と、制御部6とを有する。
Pre)51からは第1ガス供給配管54が延び、第2原料ガス供給源(2nd Pre)52からは第2ガス供給配管55が延び、酸化ガス供給源53からは第3ガス供給配管56が延びており、これら配管は、それぞれシャワーヘッド3のガス導入部32に設けられた上部ガス流路32b、32c、32dに接続されている。
以上、実施形態について説明したが、今回開示された実施形態は、全ての点で例示であって制限的なものではないと考えられるべきである。上記の実施形態は、添付の特許請求の範囲およびその主旨を逸脱することなく、様々な形態で省略、置換、変更されてもよい。
2;サセプタ
3;シャワーヘッド
4;排気部
5;ガス供給機構
6;制御部
51;第1原料ガス供給源
52;第2原料ガス供給源
53;酸化ガス供給源
54,55,56;ガス供給配管
61,62,64;高速バルブ
71,72,73;パージガス配管
100;成膜装置
W;半導体ウエハ(基板)
Claims (12)
- 第1の元素を含む第1の原料ガスを基板に供給して吸着させるサブステップと、反応ガスを前記基板に供給して前記第1の原料ガスと反応させるサブステップと、を有する前記基板に単位膜を成膜する操作を複数回行って、前記基板に前記第1の元素を含む第1の膜を成膜する工程と、
前記第1の元素とは異なる第2の元素を含む第2の原料ガスを前記基板に供給して吸着させるサブステップと、反応ガスを前記基板に供給して前記第2の原料ガスと反応させるサブステップと、を有する前記基板に単位膜を成膜する操作を少なくとも1回行って、前記基板に前記第2の元素を含む第2の膜を成膜する工程と、
を1回または複数回繰り返して混合膜を成膜し、
前記第2の膜を成膜する工程は、前記第2の原料ガスを供給する工程に先立って、前記第1の原料ガスを前記基板に供給して吸着させ、前記第2の原料ガスの吸着を抑制するサブステップをさらに有する、成膜方法。 - 前記第1の原料ガス、前記第2の原料ガス、前記反応ガスを供給した後、前記処理容器内にパージガスを供給して前記処理容器内をパージする工程を実施する、請求項1に記載の成膜方法。
- 前記第1の膜および前記第2の膜は化合物膜である、請求項1または請求項2に記載の成膜方法。
- 前記第1の元素および前記第2の元素は、Mg、Al、Si、Ca、Sc、Ti、V、Cr、Mn、Fe、Co、Ni、Cu、Zn、Ga、Ge、Sr、Y、Zr、Nb、Mo、Ru、Rh、In、Sn、Sb、Te、Ba、La、Hf、Ta、W、Reからなる群から選択されたものである、請求項1から請求項3のいずれか一項に記載の成膜方法。
- 前記第2の膜を成膜する工程は、前記第1の原料ガスを前記基板に供給して吸着させるサブステップの後、前記第2の原料ガスを供給するサブステップの前に、前記基板に吸着された前記第1の原料ガスを反応ガスにより不十分に反応させるサブステップをさらに有する、請求項1から請求項4のいずれか一項に記載の成膜方法。
- 前記第1の膜を成膜する際の反応ガスおよび前記第2の膜を成膜する際の反応ガスは酸化ガスであり、前記第1の膜および前記第2の膜として酸化物膜を成膜する、請求項2から請求項4のいずれか一項に記載の成膜方法。
- 前記第2の膜を成膜する工程は、前記第1の原料ガスを前記基板に供給して吸着させるサブステップの後、前記第2の原料ガスを供給するサブステップの前に、前記基板に吸着された前記第1の原料ガスを酸化ガスにより不十分に酸化させるサブステップをさらに有する、請求項6に記載の成膜方法。
- 前記不十分に酸化させるサブステップは、酸化ガスの導入時間、酸化ガスの供給量・濃度、および酸化ガスの種類の少なくとも1種を調整することにより行われる、請求項7に記載の成膜方法。
- 前記第1の膜を構成する酸化膜はHigh−k膜であり、前記第2の膜を構成する酸化膜はSiO2膜である、請求項6から請求項8のいずれか一項に記載の成膜方法。
- 前記第1の膜を構成する酸化膜であるHigh−k膜は、HfO2膜である、請求項9に記載の成膜方法。
- 基板が収容される処理容器と、
前記処理容器で基板を支持する基板支持部材と、
前記処理容器内に、少なくとも第1の原料ガス、第2の原料ガス、および反応ガスを供給するガス供給機構と、
前記処理容器内を排気する排気機構と、
前記基板を加熱する加熱機構と、
制御部と、
を有し、
前記制御部は、
第1の元素を含む第1の原料ガスを基板に供給して吸着させるサブステップと、反応ガスを前記基板に供給して前記第1の原料ガスと反応させるサブステップと、を有する前記基板に単位膜を成膜する操作を複数回行って、前記基板に前記第1の元素を含む第1の膜を成膜する工程と、
前記第1の元素とは異なる第2の元素を含む第2の原料ガスを前記基板に供給して吸着させるサブステップと、反応ガスを前記基板に供給して前記第2の原料ガスと反応させるサブステップと、を有する前記基板に単位膜を成膜する操作を少なくとも1回行って、前記基板に前記第2の元素を含む第2の膜を成膜する工程と、
を1回または複数回繰り返し、
前記第2の膜を成膜する工程を実行する際に、前記第2の原料ガスを供給するサブステップに先立って、前記第1の原料ガスを前記基板に供給して吸着させ、前記第2の原料ガスの吸着を抑制するサブステップをさらに有するように、前記ガス供給機構、前記加熱機構、前記排気機構を制御する、成膜装置。 - 前記ガス供給機構は、前記処理容器内にパージガスを供給し、
前記制御部は、前記第1の原料ガス、前記第2の原料ガス、前記反応ガスを供給した後、前記処理容器内にパージガスを供給して前記処理容器内をパージするように制御する、請求項11に記載の成膜装置。
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