JP2021080560A - Film deposition device, film deposition method using the same and method for manufacturing electronic device - Google Patents

Abstract

To suppress deterioration in film deposition accuracy.SOLUTION: A film deposition device deposits a deposition material discharged from a deposition source on the substrate via a mask inside a chamber. The film deposition device includes multiple adhesion prevention members disposed inside the chamber and to which the deposition material scattering in directions other than the mask adheres. The multiple adhesion prevention members have an angle defined between an opposite surface of the adhesion prevention member opposed to the deposition source and a normal line of a deposition surface of the substrate and varying in accordance with a distance from the mask in a direction of the normal line.SELECTED DRAWING: Figure 3

Description

The present invention relates to a film forming apparatus, a film forming method using the film forming apparatus, and a method for manufacturing an electronic device.

The application field of the organic EL display device (organic EL display) is expanding not only to displays for smartphones, televisions, and automobiles, but also to VR HMD (Virtual Reality Head Mount Display) and the like. In particular, the display used for the VR HMD is required to form a pixel pattern with high definition in order to reduce dizziness of the user. That is, further higher resolution is required.

In the manufacture of an organic EL display device, when the organic light emitting element (organic EL element; OLED) constituting the organic EL display device is formed, the film forming material discharged from the film forming source of the film forming apparatus is used as a pixel pattern. An organic layer or a metal layer is formed by forming a film on the substrate through the mask on which the above is formed.

In such a film forming apparatus, the film forming material discharged from the film forming source adheres to a place other than the mask and the substrate and is deposited. When the deposited film-forming material grows to a certain film thickness, it easily peels off and becomes a source of particles. Therefore, maintenance is performed to periodically remove the deposited film-forming material. Conventionally, in order to facilitate this maintenance, a protective plate that can be taken out from the chamber has been installed in a place other than the mask or the substrate on which the film-forming material discharged from the film-forming source is scattered (). Patent Document 1).

JP-A-2010-174344

When a protective plate is installed in the chamber, the protective plate is heated by radiant heat from the film forming source and scattered film forming material, and the temperature rises. When the temperature of the protective plate rises, the substrate and mask are heated by the radiant heat generated from the protective plate. When the substrate or mask is heated and the temperature rises, the relative positions of the substrate and the mask are displaced due to the difference in the coefficient of thermal expansion between the substrate and the mask. That is, there is a problem that the substrate and the mask are heated by the adhesive plate arranged in the chamber and the film formation accuracy is lowered.

Therefore, an object of the present invention is to suppress a decrease in film formation accuracy in view of the above-mentioned problems of the prior art.

The film forming apparatus according to an embodiment of the present invention is a film forming apparatus for forming a film forming material discharged from a film forming source onto a substrate via a mask in a chamber, and is arranged in the chamber. It has a plurality of anti-adhesion members to which a film-forming material scattered in a direction other than the mask adheres, and the plurality of anti-adhesion members are formed of the facing surface of the anti-adhesion member facing the film-forming source and the substrate. The angle of the film surface with the normal is different depending on the distance from the mask in the direction of the normal.

According to the present invention, it is possible to suppress a decrease in film formation accuracy.

FIG. 1 is a plan view schematically showing a configuration of a part of an electronic device manufacturing apparatus. FIG. 2 is a schematic view showing the configuration of a film forming apparatus according to an embodiment of the present invention. FIG. 3 is a schematic cross-sectional view of a film forming apparatus showing an arrangement structure of an adhesive member according to an embodiment of the present invention. FIG. 4 is a schematic diagram showing an electronic device.

Hereinafter, preferred embodiments and examples of the present invention will be described with reference to the drawings. However, the following embodiments and examples exemplify preferred configurations of the present invention, and the scope of the present invention is not limited to these configurations. Further, in the following description, the hardware configuration and software configuration of the apparatus, processing flow, manufacturing conditions, dimensions, materials, shapes, etc. are intended to limit the scope of the present invention to these unless otherwise specified. It's not a thing.

The present invention can be applied to an apparatus for depositing various materials on the surface of a substrate to form a film, and can be suitably applied to an apparatus for forming a thin film (material layer) having a desired pattern by vacuum vapor deposition. ..

As the material of the substrate, any material such as semiconductor (for example, silicon), glass, a film of a polymer material, and a metal can be selected, and the substrate is, for example, a silicon wafer or a film such as polyimide on a glass substrate. May be a laminated substrate. Further, as the film forming material, any material such as an organic material and a metallic material (metal, metal oxide) can be selected.

The present invention can be applied not only to a vacuum vapor deposition apparatus by heating and evaporation, but also to a film forming apparatus including a sputtering apparatus and a CVD (Chemical Vapor Deposition) apparatus. Specifically, the technique of the present invention can be applied to various electronic devices such as semiconductor devices, magnetic devices, and electronic components, and manufacturing devices such as optical components. Specific examples of the electronic device include a light emitting element, a photoelectric conversion element, a touch panel, and the like. The present invention is particularly preferably applicable to an apparatus for manufacturing an organic light emitting element such as an OLED or an organic photoelectric conversion element such as an organic thin film solar cell. The electronic device in the present invention also includes a display device (for example, an organic EL display device) and a lighting device (for example, an organic EL lighting device) equipped with a light emitting element, and a sensor (for example, an organic CMOS image sensor) equipped with a photoelectric conversion element. It is a device.

<Manufacturing equipment for electronic devices>
FIG. 1 is a plan view schematically showing a configuration of a part of an electronic device manufacturing apparatus.

The manufacturing device of FIG. 1 is used, for example, for manufacturing a display panel of an organic EL display device for a smartphone or an organic EL display device for a VR HMD. In the case of a display panel for smartphones, for example, on a 4.5th generation substrate (about 700 mm x about 900 mm), a 6th generation full size (about 1500 mm x about 1850 mm) or a half cut size (about 1500 mm x about 925 mm) substrate. After forming a film for forming an organic EL element, the substrate is cut out to produce a plurality of small-sized panels. In the case of a display panel for a VR HMD, for example, after forming a film for forming an organic EL element on a silicon wafer of a predetermined size (for example, 300 mm), the area between the element forming regions (scribing region) is formed. The silicon wafer is cut out along the line to produce a plurality of small size panels.

The electronic device manufacturing device generally includes a plurality of cluster devices 1 and a relay device that connects the cluster devices 1.

The cluster device 1 includes a plurality of film forming devices 11 that perform processing (for example, film forming) on the substrate W, a plurality of mask stock devices 12 that store masks before and after use, and a transport chamber 13 arranged in the center thereof. , Equipped with. As shown in FIG. 1, the transport chamber 13 is connected to each of the plurality of film forming apparatus 11 and the mask stock apparatus 12.

In the transport chamber 13, a transport robot 14 that transports the substrate and the mask is arranged. The transfer robot 14 transfers the substrate W from the path chamber 15 of the relay device arranged on the upstream side to the film forming apparatus 11. Further, the transfer robot 14 transfers the mask between the film forming apparatus 11 and the mask stock apparatus 12. The transfer robot 14 is, for example, a robot having a structure in which a robot hand holding a substrate W or a mask is attached to an articulated arm.

In the film forming apparatus 11 (also referred to as a vapor deposition apparatus), the vapor deposition material stored in the evaporation source is heated by a heater and evaporated, and is vapor-deposited on the substrate via a mask. A series of film forming processes such as transfer of the substrate W to and from the transfer robot 14, adjustment (alignment) of the relative position between the substrate W and the mask, fixing of the substrate W on the mask, and film formation (deposited film deposition) are performed by the film forming apparatus 11. Is done by.

In the mask stock device 12, a new mask used in the film forming process in the film forming apparatus 11 and a used mask are separately stored in two cassettes. The transfer robot 14 transfers the used mask from the film forming apparatus 11 to the cassette of the mask stock device 12, and conveys a new mask stored in another cassette of the mask stock device 12 to the film forming apparatus 11.

The cluster device 1 includes a pass chamber 15 that transmits the board W from the upstream side to the cluster device 1 in the flow direction of the board W, and another board W on the downstream side that has completed the film formation process in the cluster device 1. A buffer chamber 16 for transporting to the cluster device is connected. The transfer robot 14 in the transfer chamber 13 receives the substrate W from the path chamber 15 on the upstream side and transfers it to one of the film forming devices 11 (for example, the film forming device 11a) in the cluster device 1. Further, the transfer robot 14 receives the substrate W for which the film forming process in the cluster device 1 has been completed from one of the plurality of film forming devices 11 (for example, the film forming device 11b), and the buffer connected to the downstream side. Transport to chamber 16.

A swivel chamber 17 for changing the orientation of the substrate is installed between the buffer chamber 16 and the pass chamber 15. The swivel chamber 17 is provided with a transfer robot 18 for receiving the substrate W from the buffer chamber 16, rotating the substrate W by 180 °, and transporting the substrate W to the pass chamber 15. As a result, the orientation of the substrate W is the same between the cluster device on the upstream side and the cluster device on the downstream side, and the substrate processing becomes easy.

The pass chamber 15, the buffer chamber 16, and the swivel chamber 17 are so-called relay devices that connect the cluster devices, and the relay devices installed on the upstream side and / or the downstream side of the cluster device are the pass room, the buffer room, and the like. Includes at least one of the swivel chambers.

The film forming apparatus 11, the mask stock apparatus 12, the transport chamber 13, the buffer chamber 16, the swirl chamber 17, and the like are maintained in a high vacuum state in the process of manufacturing the organic light emitting element. The pass chamber 15 is usually maintained in a low vacuum state, but may be maintained in a high vacuum state if necessary.

In the present embodiment, the configuration of the manufacturing device for the electronic device has been described with reference to FIG. 1, but the present invention is not limited to this, and other types of devices and chambers may be provided, and these devices may be provided. And the arrangement between the chambers may change. For example, the electronic device manufacturing apparatus according to the embodiment of the present invention may be an in-line type instead of the cluster type shown in FIG. That is, the substrate and the mask may be mounted on the carrier, and the film may be formed while being conveyed in a plurality of film forming devices arranged in a row. Further, it may have a structure of a type in which a cluster type and an inline type are combined. For example, the formation of the organic layer can be performed by a cluster type manufacturing apparatus, and the process of forming the electrode layer (cathode layer), the sealing step, the cutting step, and the like can be performed by an in-line type manufacturing apparatus.

Hereinafter, a specific configuration of the film forming apparatus 11 will be described.

<Film formation equipment>
FIG. 2 is a schematic view showing the configuration of the film forming apparatus 11 according to the embodiment of the present invention.

The film forming apparatus 11 evaporates or sublimates the film forming material of the film forming source by heating, and forms a film on the substrate W via the mask M. Adjustment (alignment) of the relative positions of the substrate W and the mask M is performed by performing alignment by driving the stage. A series of film formation processes from alignment to film formation is performed in a vacuum vapor deposition apparatus.

The film forming apparatus 11 includes a vacuum chamber 21 maintained in a vacuum atmosphere or an atmosphere of an inert gas such as nitrogen gas. A fine movement stage mechanism 22 that adjusts the position of the substrate W, a substrate suction means 24 that sucks and holds the substrate W, a mask stand 23 that supports the mask M, a coarse movement stage 232 that adjusts the position of the mask M, and film formation. A film forming source 25 that heats and releases the material is included.

The film forming apparatus 11 according to the embodiment of the present invention can further include a magnetic force applying means 26 for bringing the metal mask M into close contact with the substrate W side by magnetic force.

The vacuum chamber 21 of the film forming apparatus 11 according to the embodiment of the present invention can maintain the internal space of the vacuum chamber 21 in a high vacuum state by connecting the vacuum pump P.

The fine movement stage mechanism 22 is a stage mechanism for adjusting the position of the substrate W or the substrate suction means 24, and makes it possible to set the relative position of the substrate W with respect to the mask M to the threshold value or less. The fine movement stage mechanism 22 includes a reference plate portion 221 (first plate portion) that functions as a support structure and a fine movement stage plate portion 222 (second plate portion) that functions as a movable base.

The fine movement stage mechanism 22 can be configured as a magnetic levitation stage mechanism driven by a magnetic levitation linear motor in order to enable the position of the substrate W or the substrate adsorption means 24 to be adjusted with high accuracy. That is, for example, a coil through which an electric current flows is installed in the reference plate portion 221 as a stator, and a permanent magnet is installed as a mover in the region of the fine movement stage plate portion 222 corresponding to this, and the reference plate portion 221 is provided with a permanent magnet. By moving the fine movement stage plate portion 222 in a magnetically levitated state, the positions of the substrate suction means 24 mounted on one main surface (for example, the lower surface) of the fine movement stage plate portion 222 and the substrate W adsorbed on the substrate suction means 24 can be moved. It can be adjusted with high precision. The fine movement stage mechanism 22 determines the position measuring means for measuring the position of the fine movement stage plate portion 222, the self-weight compensating means for compensating the gravity applied to the fine movement stage plate portion 222, and the origin position of the fine movement stage plate portion 222. It can further include origin positioning means for determining.

The mask stand 23 is a support structure for installing and fixing the mask M, and is installed on the coarse movement stage 232. Thereby, the relative position of the mask M with respect to the substrate W and the vertical spacing can be adjusted.

The mask M has an opening pattern corresponding to the thin film pattern formed on the substrate W, and is supported by the mask stand 23. For example, the mask M used for manufacturing an organic EL display panel for VR HMD is a fine metal mask which is a metal mask in which a fine opening pattern corresponding to the RGB pixel pattern of the light emitting layer of the organic EL element is formed. (Fine Metal Mask) and an open mask (Open Mask) used for forming a common layer (hole injection layer, hole transport layer, electron transport layer, electron injection layer, etc.) of an organic EL element. The opening pattern of the mask M is defined by a blocking pattern that does not allow particles of the film-forming material to pass through. Further, the mask M may be manufactured from silicon as a material.

The substrate adsorption means 24 is a means for adsorbing and holding the substrate W as a film-deposited body carried into the apparatus. The substrate suction means 24 is installed on the fine movement stage plate portion 222, which is a movable base of the fine movement stage mechanism 22. The substrate adsorption means 24 is, for example, an electrostatic chuck having a structure in which an electric circuit such as a metal electrode is embedded in a dielectric or insulator (for example, ceramic material) matrix. In the electrostatic chuck as the substrate adsorption means 24, a dielectric having a relatively high resistance is interposed between the electrode and the adsorption surface, and adsorption is performed by the Coulomb force between the electrode and the object to be adsorbed. It may be a type of electrostatic chuck, or a dielectric having a relatively low resistance is interposed between the electrode and the adsorption surface, and Johnson is generated between the adsorption surface of the dielectric and the object to be adsorbed. It may be a Johnson-Labeck force type electrostatic chuck in which adsorption is performed by a Larveck force, or a gradient force type electrostatic chuck in which an object to be adsorbed is adsorbed by a non-uniform electric field. When the object to be adsorbed is a conductor or a semiconductor (silicon wafer), it is preferable to use a Coulomb force type electrostatic chuck or a Johnson-Labeck force type electrostatic chuck, and the object to be adsorbed is an insulator such as glass. In this case, it is preferable to use a gradient force type electrostatic chuck.

The film forming source 25 includes a crucible (not shown) in which the film forming material to be formed on the substrate W is stored, a heater for heating the crucible (not shown), and the like. The film forming source 25 can have various configurations depending on the application, such as a point film forming source and a linear film forming source.

The magnetic force applying means 26 is a means for attracting the metal mask M to the substrate W side by the magnetic force at the time of film formation and is installed so as to be able to move up and down in the vertical direction. For example, the magnetic force applying means 26 is composed of an electromagnet or a permanent magnet. An elevating mechanism 27 for elevating and lowering the magnetic force applying means 26 is installed on the upper outer side (atmosphere side) of the vacuum chamber 21. When the vapor deposition position where the substrate W and the mask M come into contact with each other is reached, the magnetic force applying means 26 is lowered and the mask M is attracted through the electrostatic chuck 24 and the substrate W to bring the substrate W and the mask M into close contact with each other. Here, when the mask M is made of silicon instead of metal, the magnetic force applying means 26 becomes unnecessary.

In the film forming apparatus 11, the adhesive member 30 is arranged inside the vacuum chamber 21. The adhesion member 30 prevents the film-forming material emitted from the film-forming source 25 from being scattered in a direction other than the mask M from adhering to components other than the substrate W of the film-forming apparatus 11. To prevent. The adhesive member 30 is made of a metal plate material such as stainless steel or aluminum, and an extra film-forming material adheres to the film every time the film is repeatedly formed. Therefore, the adhesive member 30 is regularly cleaned for cleaning. It has a structure that can be attached and detached and carried out to the outside of the vacuum chamber 21. A plurality of adhesive members 30 may be provided so as to effectively cover different regions inside the vacuum chamber 21. The detailed arrangement structure of the adhesive member 30 according to the embodiment of the present invention will be described later.

In the above description, the film forming apparatus 11 has a so-called upward vapor deposition method (depot-up) in which film formation is performed with the film forming surface of the substrate W facing downward in the vertical direction. Not limited. The substrate W may be arranged in a state of being vertically erected on the side surface side of the vacuum chamber 21, and the film formation may be performed in a state where the film formation surface of the substrate W is parallel to the direction of gravity. Further, as a configuration for adjusting (aligning) the relative position of the substrate W with respect to the mask M, an example in which the substrate W is moved by the magnetic levitation stage mechanism while being attracted to the electrostatic chuck which is the substrate adsorption means has been described. The substrate and the mask may each be placed on a support base that supports the outer periphery, and these may be moved by a mechanical stage mechanism composed of a mechanical motor, a ball screw, a linear guide, or the like.

<Film formation process>
Hereinafter, a film forming method using the film forming apparatus according to the present embodiment will be described.

The substrate W is carried into the vacuum chamber 21 with the mask M supported by the mask stand 23 in the vacuum chamber 21. After the carried-in substrate W is sufficiently close to or in contact with the substrate adsorption means 24, a substrate adsorption voltage is applied to the substrate adsorption means 24 to attract the substrate W. The alignment between the substrate W and the mask M is performed by driving the fine movement stage mechanism 22 and the coarse movement stage 232. When the amount of deviation between the relative positions of the substrate W and the mask M becomes smaller than a predetermined threshold value, the magnetic force applying means 26 is lowered, the substrate W and the mask M are brought into close contact with each other, and then the film-forming material is formed on the substrate W. To do. After forming a film to a desired thickness, the magnetic force applying means 26 is raised to separate the mask M, and the substrate W is carried out.

<Anti-bonding member arrangement structure>
FIG. 3 is a schematic cross-sectional view of a film forming apparatus showing an arrangement structure of an adhesive member 30 according to an embodiment of the present invention.

In FIG. 3, a film forming source 25 is provided on the bottom surface of the vacuum chamber 21. The film-forming source 25 has a discharge hole for the film-forming material, and the surface on which the substrate W and the mask M are formed is arranged toward the discharge hole at the point where the discharge hole is directed. The mask M is provided with a pattern hole through which the film-forming material passes at a desired location, and the film-forming material discharged from the film-forming source 25 adheres to the substrate W in a desired pattern via the mask M. Will be possible.

In order to release the film-forming material from the film-forming source 25, the inside of the crucible 25a in the film-forming source 25 is heated to a high temperature of, for example, 500 ° C.

Further, inside the vacuum chamber 21, an adhesion member 30 is installed adjacent to the wall of the vacuum chamber 21 so as to surround the film forming source 25. As a result, the film-forming material released from the film-forming source 25 and scattered in a direction other than the mask M adheres to the adhesive member 30.

The adhesive member 30 is usually made of a metal plate material such as stainless steel or aluminum. As described above, such an adhesive member 30 receives radiant heat from the film forming source 25 at the time of film formation, raises the temperature, and becomes a radiant heat source that affects the relative positions of the substrate W and the mask M. It may cause a decrease in the alignment accuracy of the mask M.

According to the present invention, first, the arrangement angle of the adhesion member 30 is optimized to suppress a change in the relative positions of the substrate W and the mask M due to the adhesion member 30 which is a radiant heat source. More specifically, the adhesion member 30 is installed at an angle that can minimize the view factor with respect to the mask M, which is the radiation subject. Here, the view factor means the area of the radiant heat source as seen from the radiant body, and the smaller the view factor, the smaller the influence of the same radiant heat source.

According to the embodiment of the present invention, the adhesive member 30 is installed so as to be inclined with respect to the wall surface of the vacuum chamber 21. More specifically, for example, when the adhesion member 30 is arranged between the film forming source 25 and the mask M, the adhesion member 30 is a wall surface of the vacuum chamber 21 in the normal direction of the film formation surface of the substrate. The central end on the inside of the vacuum chamber 21 is inclined so as to be closer to the mask M than the end (wall side end) connected to the mask M, and the wall surface side end and the central end are connected. An extension of the straight line is installed so as to be directed toward the center of the mask M. As a result, the area of the adhesive member 30 as seen from the mask M is reduced, and the view factor from the adhesive member 30 to the substrate W and the mask M is suppressed, so that the adhesive member 30 extends to the substrate W and the mask M. The amount of radiant heat can be suppressed. Therefore, it is possible to suppress a decrease in the alignment accuracy between the substrate W and the mask M.

According to such an embodiment of the present invention, the arrangement angle of the adhesive member 30 differs depending on the relative position with respect to the mask M. Specifically, when the adhesion member 30 has a plurality of adhesion members 31 to 34 having different relative positions with respect to the mask M (distance in the vertical direction in the case of FIG. 3), each adhesion member 31 to 31 The angles (θ1, θ2, θ3, θ4 in FIG. 3) formed by the facing surface facing the film forming source of 34 and the normal of the film forming surface of the substrate are from the mask M in the normal direction of the film forming surface of the substrate. As the distance between the two becomes longer, it becomes smaller (θ1> θ2> θ3> θ4).

According to one aspect of this embodiment, the surface of the adhesion member 30 may be formed of a material and / or structure capable of reducing emissivity. More specifically, the adhesion member 30 is formed of a metal plate material such as stainless steel or aluminum, and the outer surface 30a of the adhesion member 30 facing the wall surface of the vacuum chamber 21 is formed as a nickel plating layer and radiates. The rate can be reduced. If necessary, the emissivity is further reduced by applying nickel plating and mirror-finishing by polishing. As a result, the influence of radiant heat of the outside air passing through the wall surface of the vacuum chamber 21 can be reduced.

Further, the inner surface 30b of the adhesive member 30 facing the film forming source 25 is also formed as a nickel plating layer like the outer surface 30a, and if necessary, mirror-finished to reduce the emissivity. be able to. As a result, it is possible to suppress a temperature rise of the adhesion member 30 due to receiving radiant heat from the film forming source 25.

According to another aspect of the present embodiment, when the outside air is lower than the assumed temperature of the adhesion member 30, the adhesion member 30 radiates and exhausts heat from the adhesion member 30 to the wall surface of the vacuum chamber 21. The temperature rise of 30 can be suppressed. In that case, it is effective to improve the emissivity by treating the outer surface 30a of the adhesive member 30 with a DLC (diamond-like carbon) film. As a method for increasing the emissivity of the outer surface 30a, in addition to the above-mentioned DLC film treatment, a treatment for roughening the surface, a treatment for making a black surface, or the like can be applied. Examples of such a surface treatment include a blasting treatment, a black plating treatment, an oxide film forming treatment, and a thermal spraying treatment.

<Manufacturing method of electronic devices>
Next, an example of a method for manufacturing an electronic device using the film forming apparatus of the present embodiment will be described. Hereinafter, the configuration and manufacturing method of the organic EL display device will be illustrated as an example of the electronic device.

First, the organic EL display device to be manufactured will be described. FIG. 4A shows an overall view of the organic EL display device 60, and FIG. 4B shows a cross-sectional structure of one pixel.

As shown in FIG. 4A, a plurality of pixels 62 including a plurality of light emitting elements are arranged in a matrix in the display area 61 of the organic EL display device 60. Although the details will be described later, each of the light emitting elements has a structure including an organic layer sandwiched between a pair of electrodes. The pixel referred to here refers to the smallest unit that enables the display of a desired color in the display area 61. In the case of the organic EL display device according to the present embodiment, the pixel 62 is composed of a combination of the first light emitting element 62R, the second light emitting element 62G, and the third light emitting element 62B that emit light different from each other. The pixel 62 is often composed of a combination of a red light emitting element, a green light emitting element, and a blue light emitting element, but may be a combination of a yellow light emitting element, a cyan light emitting element, and a white light emitting element, and is particularly limited to at least one color. There are no restrictions.

FIG. 4B is a schematic partial cross-sectional view taken along the line AB of FIG. 4A. The pixel 62 has an organic EL element having an anode 64, a hole transport layer 65, any of the light emitting layers 66R, 66G, 66B, an electron transport layer 67, and a cathode 68 on the substrate 63. There is. Of these, the hole transport layer 65, the light emitting layers 66R, 66G, 66B, and the electron transport layer 67 correspond to the organic layer. Further, in the present embodiment, the light emitting layer 66R is an organic EL layer that emits red, the light emitting layer 66G is an organic EL layer that emits green, and the light emitting layer 66B is an organic EL layer that emits blue. The light emitting layers 66R, 66G, and 66B are formed in a pattern corresponding to a light emitting element (sometimes referred to as an organic EL element) that emits red, green, and blue, respectively. Further, the anode 64 is formed separately for each light emitting element. The hole transport layer 65, the electron transport layer 67, and the cathode 68 may be formed in common with the plurality of light emitting elements 62R, 62G, and 62B, or may be formed for each light emitting element. An insulating layer 69 is provided between the anode 64 in order to prevent the anode 64 and the cathode 68 from being short-circuited by foreign matter. Further, since the organic EL layer is deteriorated by moisture and oxygen, a protective layer 70 for protecting the organic EL element from moisture and oxygen is provided.

In FIG. 4B, the hole transport layer 65 and the electron transport layer 67 are shown as one layer, but they are formed of a plurality of layers including the hole block layer and the electron block layer depending on the structure of the organic EL display element. May be done. Further, between the anode 64 and the hole transport layer 65, a hole injection layer having an energy band structure capable of smoothly injecting holes from the anode 64 into the hole transport layer 65 is provided. It can also be formed. Similarly, an electron injection layer can be formed between the cathode 68 and the electron transport layer 67.

Next, an example of a method for manufacturing an organic EL display device will be specifically described.

First, a circuit board (not shown) for driving the organic EL display device and a substrate 63 on which the anode 64 is formed are prepared.

Acrylic resin is formed by spin coating on the substrate 63 on which the anode 64 is formed, and the acrylic resin is patterned by a lithography method so that an opening is formed in the portion where the anode 64 is formed to form an insulating layer 69. .. This opening corresponds to a light emitting region where the light emitting element actually emits light.

The substrate 63 in which the insulating layer 69 is patterned is carried into the first organic material film forming apparatus, the substrate is held by an electrostatic chuck, and the hole transport layer 65 is a common layer on the anode 64 in the display region. As a film. The hole transport layer 65 is formed by vacuum deposition. In reality, the hole transport layer 65 is formed to have a size larger than that of the display region 61, so that a high-definition mask is unnecessary.

Next, the substrate 63 on which the hole transport layer 65 is formed is carried into the second organic material film forming apparatus and held by the electrostatic chuck. After the substrate and the mask are aligned, the mask is attracted by the magnet plate and brought into close contact with the substrate, and then a light emitting layer 66R that emits red is formed on the portion of the substrate 63 on which the element that emits red is arranged.

Similar to the film formation of the light emitting layer 66R, the light emitting layer 66G that emits green is formed by the third organic material film forming apparatus, and the light emitting layer 66B that emits blue is further formed by the fourth organic material film forming apparatus. .. After the film formation of the light emitting layers 66R, 66G, and 66B is completed, the electron transport layer 67 is formed on the entire display region 61 by the fifth film forming apparatus. The electron transport layer 67 is formed as a layer common to the three color light emitting layers 66R, 66G, and 66B.

The substrate formed up to the electron transport layer 67 is moved by a metallic thin-film deposition material film forming apparatus to form a cathode 68 film.

After that, it moves to a plasma CVD device to form a protective layer 70, and the organic EL display device 60 is completed.

From the time when the substrate 63 in which the insulating layer 69 is patterned is carried into the film forming apparatus until the film formation of the protective layer 70 is completed, when the substrate 63 is exposed to an atmosphere containing moisture or oxygen, a light emitting layer made of an organic EL material is formed. It may be deteriorated by moisture and oxygen. Therefore, in this example, the loading and unloading of the substrate between the film forming apparatus is performed in a vacuum atmosphere or an inert gas atmosphere.

The above embodiment is only an example of the present invention, and the present invention is not limited to the configuration of the above embodiment, and may be appropriately modified within the scope of the technical idea.

11: Film formation device, 21: Vacuum chamber, 25: Film formation source, 30, 31, 32, 33, 34: Adhesive member

Claims (10)

A film forming apparatus that deposits a film forming material discharged from a film forming source onto a substrate through a mask in a chamber.
It has a plurality of adhesive members arranged in the chamber and to which the film-forming material scattered from the film-forming source adheres.
In the plurality of adhesion members, the angle between the facing surface of the adhesion member facing the film forming source and the normal of the film forming surface of the substrate depends on the distance from the mask in the direction of the normal. A film forming apparatus characterized by being different. The film formation according to claim 1, wherein the plurality of adhesion members have a smaller angle between the facing surface and the normal as the adhesion member has a longer distance from the mask in the direction of the normal. apparatus. A film forming apparatus that deposits a film forming material discharged from a film forming source onto a substrate through a mask in a chamber.
A first adhesive member arranged in the chamber and to which a film-forming material scattered from the film-forming source adheres,
A second adhesive member which is arranged in the chamber and whose distance from the mask is larger than the distance between the first adhesive member and the mask and to which the film-forming material scattered from the film-forming source adheres. Prepare,
The first angle between the first facing surface of the first adhesion member facing the film forming source and the normal of the film forming surface of the substrate is the first angle of the second adhesion member facing the film forming source. A film forming apparatus characterized in that it is larger than the second angle between the second facing surface and the normal line. Further, there is a third adhesive member which is arranged in the chamber, the distance from the mask is larger than the distance between the second adhesive member and the mask, and the film-forming material scattered from the film-forming source adheres. And
The film formation according to claim 3, wherein the third angle between the third facing surface of the third adhesion member facing the film forming source and the normal line is smaller than the second angle. apparatus. A film forming apparatus that deposits a film forming material discharged from a film forming source onto a substrate through a mask in a chamber.
It has an anti-adhesive member that is arranged in the chamber and to which the film-forming material scattered from the film-forming source adheres.
The adhesive member is provided on the wall surface of the chamber so that the central end inside the chamber is closer to the mask than the end connected to the wall surface of the chamber in the normal direction of the film-forming surface of the substrate. A film forming apparatus characterized in that it is installed at an angle with respect to a relative angle. The fifth aspect of the present invention, wherein the adhesive member is installed so that an extension line of a straight line connecting an end portion connected to the wall surface and the central end portion passes through the center of the mask. Film forming equipment. The film forming apparatus according to any one of claims 1 to 6, wherein the surface of the adhesive member facing the film forming source is mirror-finished. The film forming apparatus according to any one of claims 1 to 7, wherein the surface of the adhesive member facing the wall surface of the chamber is mirror-finished. A film forming method comprising the film forming apparatus according to any one of claims 1 to 8 to form a film forming material on a substrate via a mask inside the chamber of the film forming apparatus. .. A method for manufacturing an electronic device, which comprises manufacturing an electronic device by using the film forming method according to claim 9.

Images