CN112824558A

CN112824558A - Film forming apparatus, film forming method using film forming apparatus, and method for manufacturing electronic device

Info

Publication number: CN112824558A
Application number: CN202011265085.8A
Authority: CN
Inventors: 新海达也; 中岛隆介; 中津川雅史
Original assignee: Canon Tokki Corp
Current assignee: Canon Tokki Corp
Priority date: 2019-11-20
Filing date: 2020-11-13
Publication date: 2021-05-21
Anticipated expiration: 2040-11-13
Also published as: TW202136555A; JP2021080560A; CN112824558B; KR20210061639A; JP7170017B2

Abstract

The present invention relates to a film forming apparatus, a film forming method using the film forming apparatus, and a method of manufacturing an electronic device. The invention restrains the reduction of film forming precision. The deposition apparatus according to the present invention is a deposition apparatus for depositing a deposition material discharged from a deposition source onto a substrate in a chamber through a mask, the deposition apparatus including a plurality of deposition prevention members disposed in the chamber and configured to deposit the deposition material scattered in a direction other than the mask, wherein an angle between an opposing surface of the deposition prevention member opposing the deposition source and a normal to a deposition surface of the substrate differs depending on a distance from the mask in a direction of the normal.

Description

Film forming apparatus, film forming method using film forming apparatus, and method for manufacturing electronic device

Technical Field

The present invention relates to a film forming apparatus, a film forming method using the film forming apparatus, and a method of manufacturing an electronic device.

Background

Organic EL Display devices (organic EL displays) are widely used not only in smart phones, televisions, and displays for automobiles, but also in VRHMDs (Virtual Reality Head mounted displays) and the like, and the application fields thereof are expanding. In particular, in a display used in a VRHMD, it is required to form a pixel pattern with high precision in order to reduce vertigo of a user. That is, further high resolution is required.

In the manufacture of an organic EL display device, when forming an organic light-emitting element (organic EL element; OLED) constituting the organic EL display device, a film-forming material discharged from a film-forming source of a film-forming device is formed on a substrate through a mask on which a pixel pattern is formed, thereby forming an organic layer and a metal layer.

In such a film deposition apparatus, the film deposition material discharged from the film deposition source is also deposited and accumulated on a portion other than the mask and the substrate. The deposited film-forming material is likely to be peeled off when grown to a certain thickness, and becomes a generation source of particles. Therefore, maintenance is performed to remove the deposited film-forming material periodically. Conventionally, in order to facilitate such maintenance, an adhesion preventing plate that can be taken out from a chamber is provided in a region other than a mask and a substrate where a film forming material discharged from a film forming source is scattered (patent document 1).

Documents of the prior art

Patent document

Patent document 1: japanese patent application laid-open No. 2010-174344

Disclosure of Invention

Problems to be solved by the invention

When the deposition preventing plate is provided in the chamber, the deposition preventing plate is heated by radiant heat from a deposition source or a scattered deposition material, and the temperature rises. When the temperature of the adhesion preventing plate rises, the substrate and the mask are heated by the radiant heat generated from the adhesion preventing plate. When the substrate and the mask are heated and the temperature rises, the relative positions of the substrate and the mask are shifted due to the difference in thermal expansion coefficient between the substrate and the mask. That is, the deposition preventing plate disposed in the chamber heats the substrate and the mask, which causes a problem of lowering the film forming accuracy.

In view of the problems of the prior art, it is an object of the present invention to suppress a decrease in film forming accuracy.

Means for solving the problems

A film deposition apparatus according to an aspect of the present invention is a film deposition apparatus for depositing a film deposition material discharged from a film deposition source on a substrate via a mask in a chamber, the film deposition apparatus including a plurality of adhesion prevention members that are disposed in the chamber and that adhere the film deposition material scattering in a direction other than the mask, wherein an angle between an opposing surface of the adhesion prevention member opposing the film deposition source and a normal line of a film deposition surface of the substrate differs according to a distance from the mask in a direction of the normal line.

Another aspect of the present invention is a film deposition apparatus for depositing a film deposition material discharged from a film deposition source on a substrate via a mask in a chamber, the film deposition apparatus including:

a first adhesion preventing member that is disposed in the chamber and adheres to a film forming material scattered from the film forming source; and

a second adhesion preventing member disposed in the chamber, having a distance from the mask larger than a distance from the first adhesion preventing member to the mask, and adhering a film forming material scattered from the film forming source,

a first angle between a first opposing surface of the first adhesion prevention member opposing the film formation source and a normal line of the film formation surface of the substrate is larger than a second angle between a second opposing surface of the second adhesion prevention member opposing the film formation source and the normal line.

In addition, a film forming apparatus according to still another aspect of the present invention is a film forming apparatus for forming a film on a substrate through a mask by using a film forming material discharged from a film forming source in a chamber,

the film forming apparatus includes an adhesion preventing member disposed in the chamber and configured to adhere a film forming material scattered from the film forming source,

the adhesion preventing member is provided obliquely with respect to the wall surface of the chamber so that an end portion of the chamber on an inner side thereof in a normal direction of the deposition surface of the substrate is closer to the mask than an end portion connected to the wall surface of the chamber.

Effects of the invention

According to the present invention, a decrease in film formation accuracy can be suppressed.

Drawings

Fig. 1 is a plan view schematically showing a structure of a part of an apparatus for manufacturing an electronic device.

Fig. 2 is a schematic view showing a structure of a film deposition apparatus according to an embodiment of the present invention.

Fig. 3 is a schematic cross-sectional view of a film formation apparatus showing an arrangement structure of an adhesion preventing member according to an embodiment of the present invention.

Fig. 4 is a schematic diagram showing an electronic device.

Description of the reference numerals

11: a film forming apparatus; 21: a vacuum chamber; 25: a film forming source; 30. 31, 32, 33, 34: an anti-adhesion member.

Detailed Description

Preferred embodiments and examples of the present invention will be described below with reference to the accompanying drawings. However, the following embodiments and examples are examples illustrating preferred configurations of the present invention, and the scope of the present invention is not limited to these configurations. In the following description, the hardware configuration and software configuration of the apparatus, the process flow, the manufacturing conditions, the dimensions, the materials, the shapes, and the like are not intended to limit the scope of the present invention to these embodiments unless otherwise specified.

The present invention is applicable to an apparatus for depositing various materials on a surface of a substrate to form a film, and is applicable to an apparatus for forming a thin film (material layer) having a desired pattern by vacuum deposition.

As a material of the substrate, any material such as a semiconductor (e.g., silicon), glass, a film of a polymer material, a metal, or the like can be selected, and the substrate may be, for example, a substrate in which a film of polyimide or the like is laminated on a silicon wafer or a glass substrate. As the film formation material, any material such as an organic material or a metallic material (metal or metal oxide) can be selected.

The present invention can be applied to a film forming apparatus including a sputtering apparatus and a CVD (Chemical Vapor Deposition) apparatus, in addition to a vacuum evaporation apparatus using thermal evaporation. Specifically, the technique of the present invention can be applied to manufacturing apparatuses for various electronic devices such as semiconductor devices, magnetic devices, and electronic components, and optical components. Specific examples of the electronic device include a light-emitting element, a photoelectric conversion element, a touch panel, and the like. Among these, the present invention is preferably applicable to an apparatus for manufacturing an organic light-emitting device such as an OLED and an organic photoelectric conversion device such as an organic thin-film solar cell. The electronic device of the present invention includes a display device (for example, an organic EL display device) or an illumination device (for example, an organic EL illumination device) including a light-emitting element, and a sensor (for example, an organic CMOS image sensor) including a photoelectric conversion element.

< apparatus for manufacturing electronic device >

The manufacturing apparatus of fig. 1 is used for manufacturing a display panel of an organic EL display device for a smart phone or an organic EL display device for a VRHMD, for example. In the case of a display panel for a smartphone, for example, a film formation for forming an organic EL element is performed on a 4.5 th generation substrate (about 700mm × about 900mm), a 6 th generation substrate (about 1500mm × about 1850mm), or a half-cut substrate (about 1500mm × about 925mm), and then the substrate is cut out to fabricate a plurality of small-sized panels. In the case of a display panel for a VRHMD, for example, after film formation for forming organic EL elements is performed on a silicon wafer of a predetermined size (for example, 300mm), the silicon wafer is cut along regions (scribe regions) between the element formation regions, and a plurality of small-sized panels are manufactured.

The manufacturing apparatus for electronic devices generally includes a plurality of cluster (cluster) apparatuses 1 and a transfer apparatus connecting the cluster apparatuses 1.

The cluster apparatus 1 includes a plurality of film deposition devices 11 for processing (for example, film deposition) a substrate W, a plurality of mask storage devices 12 for storing masks before and after use, and a transfer chamber 13 disposed at the center thereof. As shown in fig. 1, the transfer chamber 13 is connected to each of the plurality of film deposition apparatuses 11 and the mask storage apparatus 12.

A transfer robot 14 for transferring the substrate and the mask is disposed in the transfer chamber 13. The transfer robot 14 transfers the substrate W from the path chamber 15 of the relay device disposed on the upstream side to the film deposition apparatus 11. Further, the transfer robot 14 transfers the mask between the film deposition apparatus 11 and the mask storage apparatus 12. The transfer robot 14 is a robot having a structure in which a robot hand for holding the substrate W or the mask is attached to an articulated arm, for example.

In the film forming apparatus 11 (also referred to as a vapor deposition apparatus), a vapor deposition material stored in an evaporation source is heated and evaporated by a heater, and is deposited on a substrate through a mask. A series of film formation processes such as transfer to and from the substrate W by the transfer robot 14, adjustment (alignment) of the relative position between the substrate W and the mask, fixing of the substrate W to the mask, and film formation (vapor deposition) are performed by the film formation device 11.

In the mask storage device 12, a new mask used in the film forming process in the film forming apparatus 11 and a used mask are separately stored in two cassettes. The transfer robot 14 transfers the used mask from the film formation device 11 to the cassette of the mask storage device 12, and transfers a new mask stored in another cassette of the mask storage device 12 to the film formation device 11.

In the cluster apparatus 1, a path chamber 15 and a buffer chamber 16 are connected, the path chamber 15 transfers the substrate W from the upstream side to the cluster apparatus 1 in the flow direction of the substrate W, and the buffer chamber 16 transports the substrate W having completed the film forming process in the cluster apparatus 1 to another cluster apparatus on the downstream side. The transfer robot 14 of the transfer chamber 13 receives the substrate W from the upstream path chamber 15 and transfers the substrate W to one of the film deposition apparatuses 11 (e.g., the film deposition apparatus 11a) in the cluster apparatus 1. The transfer robot 14 receives the substrate W on which the film formation process in the cluster apparatus 1 has been completed from one of the plurality of film formation apparatuses 11 (for example, the film formation apparatus 11b), and transfers the substrate W to the buffer chamber 16 connected downstream.

A whirling chamber 17 for changing the direction of the substrate is provided between the buffer chamber 16 and the path chamber 15. A transfer robot 18 is provided in the whirling chamber 17, and the transfer robot 18 receives the substrate W from the buffer chamber 16, rotates the substrate W by 180 °, and transfers the substrate W to the path chamber 15. This makes it possible to make the direction of the substrate W the same between the upstream group device and the downstream group device, thereby facilitating the substrate processing.

The path chamber 15, the buffer chamber 16, and the swirling chamber 17 are so-called relay devices that connect the group devices, and the relay devices provided on the upstream side and/or the downstream side of the group devices include at least one of the path chamber, the buffer chamber, and the swirling chamber.

The film forming apparatus 11, the mask storage apparatus 12, the transfer chamber 13, the buffer chamber 16, the whirling chamber 17, and the like are maintained in a high vacuum state during the process of manufacturing the organic light emitting element. The path chamber 15 is normally maintained in a low vacuum state, but may be maintained in a high vacuum state as necessary.

In the present embodiment, the configuration of the apparatus for manufacturing an electronic device is described with reference to fig. 1, but the present invention is not limited to this, and other types of apparatuses and chambers may be provided, and the arrangement between these apparatuses and chambers may be changed. For example, the apparatus for manufacturing an electronic device according to an embodiment of the present invention may be an in-line (in-line) type instead of the group type shown in fig. 1. That is, the following structure may be adopted: the substrate and the mask are mounted on the carrier section, and the film is formed while being conveyed in a plurality of film forming apparatuses arranged in a line. Further, a structure of a combination of a group type and a line type may be provided. For example, the method may be performed in a cluster-type manufacturing apparatus before the organic layer is formed, and the sealing step, the cutting step, and the like may be performed in an inline-type manufacturing apparatus from the electrode layer (cathode layer) forming step.

The following describes a specific configuration of the film formation apparatus 11.

< film Forming apparatus >

Fig. 2 is a schematic diagram showing a configuration of a film formation apparatus 11 according to an embodiment of the present invention.

The film deposition apparatus 11 heats and evaporates a film deposition material of a film deposition source, thereby depositing a film on the substrate W through the mask M. Adjustment (alignment) of the relative position of the substrate W and the mask M is performed by performing position matching by stage driving. A series of film formation processes from alignment to film formation are performed in a vacuum deposition apparatus.

The film forming apparatus 11 is constituted by a vacuum chamber 21 maintained in a vacuum atmosphere or an inert gas atmosphere such as nitrogen gas. The apparatus includes a fine-motion stage mechanism 22 for adjusting the position of the substrate W, a substrate suction unit 24 for sucking and holding the substrate W, a mask stage 23 for supporting the mask M, a coarse-motion stage 232 for adjusting the position of the mask M, and a film formation source 25 for heating and discharging the film formation material.

The film deposition apparatus 11 according to an embodiment of the present invention may further include a magnetic force applying unit 26 for bringing the metal mask M into close contact with the substrate W by magnetic force.

The vacuum chamber 21 of the film deposition apparatus 11 according to an embodiment of the present invention is connected to a vacuum pump P, so that the internal space of the vacuum chamber 21 can be maintained in a high vacuum state.

The micro-motion stage mechanism 22 is a stage mechanism for adjusting the position of the substrate W or the substrate adsorption unit 24, and can set the relative position of the substrate W with respect to the mask M to a threshold value or less. The fine movement table mechanism 22 includes a reference plate portion 221 (first plate portion) functioning as a support structure and a fine movement table plate portion 222 (second plate portion) functioning as a movable table.

The micro-motion table mechanism 22 can be configured as a magnetic levitation table mechanism driven by a magnetic levitation linear motor because the position of the substrate W or the substrate adsorption unit 24 can be adjusted with high accuracy. That is, for example, by providing a coil through which current flows in the reference plate portion 221 as a stator, providing a permanent magnet as a movable element in the region of the corresponding fine movement table plate portion 222, and moving the fine movement table plate portion 222 in a magnetic levitation manner with respect to the reference plate portion 221, it is possible to accurately adjust the positions of the substrate suction unit 24 mounted on one principal surface (for example, the lower surface) of the fine movement table plate portion 222 and the substrate W sucked by the substrate suction unit 24. The fine movement table mechanism 22 may further include a position measuring unit for measuring the position of the fine movement table plate portion 222, a self-weight compensating unit for compensating the weight applied to the fine movement table plate portion 222, an origin positioning unit for determining the origin position of the fine movement table plate portion 222, and the like.

The mask stage 23 is a support structure for mounting and fixing the mask M, and is provided on the coarse movement table 232. This enables adjustment of the relative position of the mask M with respect to the substrate W and the vertical interval.

The mask M has an opening pattern corresponding to a thin film pattern formed on the substrate W, and is supported by the mask stage 23. For example, a Mask M used for manufacturing an organic EL display panel for a VRHMD includes a Fine Metal Mask (Fine Metal Mask) in which Fine opening patterns corresponding to RGB pixel patterns of a light emitting layer of an organic EL element are formed, and an Open Mask (Open Mask) for forming common layers (a hole injection layer, a hole transport layer, an electron injection layer, and the like) of the organic EL element. The opening pattern of the mask M is defined by a blocking pattern that does not allow particles of the film-forming material to pass therethrough. In addition, the mask M may be made of silicon.

The substrate suction unit 24 is a unit that sucks and holds a substrate W as a film formation object carried into the apparatus. The substrate suction unit 24 is provided on a fine movement table plate portion 222 which is a movable table of the fine movement table mechanism 22. The substrate adsorption unit 24 is, for example, an electrostatic chuck having a structure in which a circuit such as a metal electrode is embedded in a dielectric or insulator (e.g., ceramic material) base body. The electrostatic chuck as the substrate adsorption unit 24 may be a coulomb force type electrostatic chuck that adsorbs an object by coulomb force between an electrode and an adsorption surface with a dielectric having a relatively high resistance interposed therebetween, or a Johnsen Rahbeck (Johnsen Rahbeck) force type electrostatic chuck that adsorbs an object by a coulomb force between an electrode and an object by interposing a dielectric having a relatively low resistance between an electrode and an adsorption surface with Johnsen Rahbeck force generated between an adsorption surface of a dielectric and an object by an uneven electric field. When the object to be attracted is a conductor or a semiconductor (silicon wafer), a coulomb force type electrostatic chuck or a johnson rahbek force type electrostatic chuck is preferably used, and when the object to be attracted is an insulator such as glass, a gradient force type electrostatic chuck is preferably used.

The film formation source 25 includes a crucible (not shown) for containing a film formation material to be formed on the substrate W, a heater (not shown) for heating the crucible, and the like. The film formation source 25 may have a point (point) film formation source, a linear (linear) film formation source, or the like, and has various structures according to the application.

The magnetic force applying unit 26 is a unit for bringing the metal mask M close to the substrate W by magnetic force and bringing the mask M into close contact therewith during film formation, and is provided to be vertically movable. The magnetic force applying unit 26 is constituted by an electromagnet or a permanent magnet, for example. An elevating mechanism 27 for elevating and lowering the magnetic force applying unit 26 is provided on the upper outer side (atmosphere side) of the vacuum chamber 21. When reaching the vapor deposition position where the substrate W and the mask M are in contact with each other, the magnetic force applying unit 26 is lowered to draw the mask M close to each other through the electrostatic chuck 24 and the substrate W, thereby bringing the substrate W and the mask M into close contact with each other. Here, in the case where the mask M is made of silicon instead of metal, the magnetic force applying unit 26 is not required.

The deposition apparatus 11 includes an adhesion preventing member 30 disposed inside the vacuum chamber 21. The adhesion preventing member 30 prevents a film forming material, which is scattered in a direction other than the mask M among the film forming materials discharged from the film forming source 25, from adhering to other parts of the film forming apparatus 11 other than the substrate W. The adhesion preventing member 30 is made of a plate material made of metal such as stainless steel or aluminum, and is structured so as to be periodically detached for cleaning and carried out to the outside of the vacuum chamber 21, because an excessive film forming material adheres to the plate material every time film formation is repeated. The adhesion preventing member 30 can be provided in plurality so as to effectively cover different areas of the inside of the vacuum chamber 21. The detailed arrangement structure of the adhesion preventing member 30 according to the embodiment of the present invention will be described later.

In the above description, the film deposition apparatus 11 is configured to perform film deposition with the film deposition surface of the substrate W facing vertically downward, i.e., a so-called vapor deposition upward method (upward deposition), but the present invention is not limited thereto. The following structure is also possible: the substrate W is disposed in a state of standing upright on the side surface side of the vacuum chamber 21, and the film formation is performed with the film formation surface of the substrate W parallel to the direction of gravity. Further, as a configuration for adjusting (aligning) the relative position of the substrate W with respect to the mask M, an example in which the substrate W is moved by a magnetic levitation table mechanism in a state of being attracted to an electrostatic chuck as a substrate attracting means has been described, but the substrate and the mask may be placed on a support table supporting the outer periphery and moved by a mechanical table mechanism including a mechanical motor, a ball screw, a linear guide, and the like.

< film Forming Process >

A film forming method using the film forming apparatus of the present embodiment will be described below.

The substrate W is carried into the vacuum chamber 21 with the mask M supported on the mask stage 23 in the vacuum chamber 21. After the carried-in substrate W is sufficiently brought close to or into contact with the substrate suction unit 24, a substrate suction voltage is applied to the substrate suction unit 24 to suck the substrate W. The alignment of the substrate W and the mask M is performed by driving the fine movement stage mechanism 22 and the coarse movement stage 232. When the amount of displacement of the relative position between the substrate W and the mask M is smaller than a predetermined threshold value, the magnetic force applying unit 26 is lowered to bring the substrate W and the mask M into close contact with each other, and then the film forming material is formed on the substrate W. After the film is formed to a desired thickness, the magnetic force applying unit 26 is raised to separate the mask M, and the substrate W is carried out.

< attachment prevention member arrangement Structure >

Fig. 3 is a schematic cross-sectional view of a film formation apparatus showing an arrangement structure of an adhesion preventing member 30 according to an embodiment of the present invention.

In fig. 3, a film formation source 25 is provided on the bottom surface of the vacuum chamber 21. The film formation source 25 has a discharge hole for the film formation material, and the surface on which the substrate W and the mask M are formed is disposed toward the discharge hole at the tip of the discharge hole. The mask M is provided with pattern holes through which the film formation material passes at desired positions, and the film formation material discharged from the film formation source 25 can be attached to the substrate W in a desired pattern via the mask M.

In order to discharge the film forming material from the film forming source 25, the inside of the crucible 25a in the film forming source 25 is heated to a high temperature of, for example, 500 ℃.

In the vacuum chamber 21, an adhesion preventing member 30 is provided adjacent to the wall of the vacuum chamber 21 so as to surround the film source 25. Thereby, the film forming material discharged from the film forming source 25 and scattered in a direction other than the mask M adheres to the adhesion preventing member 30.

The adhesion preventing member 30 is generally made of a plate material made of metal such as stainless steel or aluminum. As described above, the deposition preventing member 30 receives the radiant heat from the deposition source 25 during the deposition to increase the temperature, and becomes a radiant heat source that affects the relative position of the substrate W and the mask M, which may cause a reduction in the alignment accuracy between the substrate W and the mask M.

According to the present invention, first, the arrangement angle of the deposition preventing member 30 is optimized, and the change in the relative position between the substrate W and the mask M due to the deposition preventing member 30 serving as a radiation heat source is suppressed. More specifically, the adhesion preventing member 30 is disposed at an angle capable of minimizing a form factor with respect to the mask M as a body to be irradiated. Here, the form factor refers to an area of the radiant heat source viewed from the radiator, and the smaller the form factor is, the smaller the influence of the same radiant heat source is.

According to the embodiment of the present invention, the adhesion preventing member 30 is provided obliquely with respect to the wall surface of the vacuum chamber 21. More specifically, for example, when the adhesion preventing member 30 is disposed between the film formation source 25 and the mask M, the adhesion preventing member 30 is disposed so that the center-side end portion inside the vacuum chamber 21 is closer to the mask M than the end portion connected to the wall surface of the vacuum chamber 21 (the wall-surface-side end portion) in the normal direction of the film formation surface of the substrate, and the extended line of the straight line connecting the wall-surface-side end portion and the center-side end portion is substantially directed toward the center of the mask M. This reduces the area of the deposition preventing member 30 viewed from the mask M, and suppresses the form factor from the deposition preventing member 30 to the substrate W and the mask M, thereby suppressing the radiant heat from the deposition preventing member 30 from reaching the substrate W and the mask M. Therefore, the alignment accuracy of the substrate W and the mask M can be suppressed from being lowered.

According to such an embodiment of the present invention, the arrangement angle of the adhesion preventing member 30 is different according to the relative position with the mask M. Specifically, when the deposition preventing member 30 includes a plurality of deposition preventing members 31 to 34 having different relative positions (distances in the vertical direction in the case of fig. 3) with respect to the mask M, angles (θ 1, θ 2, θ 3, and θ 4 in fig. 3) formed by the facing surfaces of the deposition preventing members 31 to 34 facing the deposition source and the normal line of the deposition surface of the substrate become smaller as the distance from the mask M in the normal line direction of the deposition surface of the substrate becomes longer (θ 1> θ 2> θ 3> θ 4).

According to one embodiment of the present embodiment, the surface of the adhesion preventing member 30 may be formed of a material and/or structure that can reduce emissivity. More specifically, although the adhesion preventing member 30 is formed of a metal plate material such as stainless steel or aluminum, the outer surface 30a of the adhesion preventing member 30 facing the wall surface of the vacuum chamber 21 is formed of a nickel plated layer, and the emissivity can be reduced. If necessary, the emissivity is further reduced by performing mirror finishing by polishing in addition to nickel plating. This can reduce the radiant heat influence of the outside air passing through the wall surface of the vacuum chamber 21.

The inner surface 30b of the adhesion preventing member 30 facing the film formation source 25 is also formed as a nickel plating layer in the same manner as the outer surface 30a, and if necessary, the emissivity can be reduced by performing mirror finishing. This can suppress the temperature rise of the adhesion preventing member 30 caused by the radiant heat from the film forming source 25.

In addition, according to another embodiment of the present embodiment, when the outside air is lower than the assumed temperature of the adhesion preventing member 30, the increase in temperature of the adhesion preventing member 30 can be suppressed by radiating heat from the adhesion preventing member 30 to the wall surface of the vacuum chamber 21. In this case, it is effective to improve the emissivity by performing a DLC (diamond-like carbon) film treatment on the outer surface 30a of the adhesion preventing member 30. As a method for improving the emissivity of the outer surface 30a, in addition to the DLC film treatment, a treatment for roughening the surface, a treatment for making the surface black, or the like can be applied. Examples of such surface treatment include a spray processing treatment, a black plating treatment, an oxide film forming treatment, and a thermal spraying (thermal spraying) treatment.

< method for manufacturing electronic device >

Next, an example of a method for manufacturing an electronic device using the film formation apparatus of the present embodiment will be described. Hereinafter, a structure and a manufacturing method of an organic EL display device are exemplified as an example of an electronic device.

First, the organic EL display device manufactured will be described. Fig. 4 (a) shows an overall view of the organic EL display device 60, and fig. 4 (b) shows a cross-sectional structure of one pixel.

As shown in fig. 4 (a), a plurality of pixels 62 each including a plurality of light-emitting elements are arranged in a matrix in a display region 61 of an organic EL display device 60. As will be described in detail later, each of the light-emitting elements has a structure including an organic layer sandwiched between a pair of electrodes. Here, the pixel is a minimum unit that can display a desired color in the display region 61. In the case of the organic EL display device of the present embodiment, the pixel 62 is configured by a combination of the first light-emitting element 62R, the second light-emitting element 62G, and the third light-emitting element 62B which emit light different from each other. The pixel 62 is often configured by a combination of a red light emitting element, a green light emitting element, and a blue light emitting element, but may be a combination of a yellow light emitting element, a cyan light emitting element, and a white light emitting element, and is not particularly limited as long as it is at least one color.

Fig. 4 (B) is a partial cross-sectional view of line a-B of fig. 4 (a). The pixel 62 includes an organic EL element including an anode 64, a hole transport layer 65, any one of light-emitting

layers

66R, 66G, and 66B, an electron transport layer 67, and a cathode 68 on a substrate 63. The hole transport layer 65, the

light emitting layers

66R, 66G, and 66B, and the electron transport layer 67 correspond to organic layers. In this embodiment, the light-emitting layer 66R is an organic EL layer that emits red light, the light-emitting layer 66G is an organic EL layer that emits green light, and the light-emitting layer 66B is an organic EL layer that emits blue light. The light-emitting

layers

66R, 66G, and 66B are formed in patterns corresponding to light-emitting elements (also referred to as organic EL elements) that emit red light, green light, and blue light, respectively. The anode 64 is formed separately for each light emitting element. The hole transport layer 65, the electron transport layer 67, and the cathode 68 may be formed in common to the plurality of

light emitting elements

62R, 62G, and 62B, or may be formed for each light emitting element. In addition, an insulating layer 69 is provided between the anodes 64 in order to prevent the anodes 64 and the cathodes 68 from being short-circuited by foreign matter. Since the organic EL layer is deteriorated by moisture and oxygen, a protective layer 70 for protecting the organic EL element from moisture and oxygen is provided.

In fig. 4 (b), the hole transport layer 65 and the electron transport layer 67 are illustrated as one layer, but may be formed of a plurality of layers including a hole blocking layer and an electron blocking layer depending on the structure of the organic EL display element. Further, a hole injection layer having a band structure that allows holes to be smoothly injected from the anode 64 into the hole transport layer 65 can be formed between the anode 64 and the hole transport layer 65. Similarly, an electron injection layer can be formed between the cathode 68 and the electron transport layer 67.

Next, an example of a method for manufacturing an organic EL display device will be specifically described.

First, a circuit (not shown) for driving the organic EL display device and a substrate 63 on which an anode 64 is formed are prepared.

On the substrate 63 on which the anode 64 is formed, an acrylic resin is formed by spin coating, and is patterned by photolithography so as to form an opening at a portion where the anode 64 is formed, and an insulating layer 69 is formed. The opening corresponds to a light-emitting region where the light-emitting element actually emits light.

The substrate 63 on which the insulating layer 69 is patterned is carried into a first organic material film forming apparatus, and held by an electrostatic chuck, and the hole transport layer 65 is formed as a common layer on the anode 64 in the display region. The hole transport layer 65 is formed by vacuum evaporation. Since the hole transport layer 65 is actually formed to have a size larger than the display region 61, a high-definition mask is not required.

Next, the substrate 63 on which the hole transport layer 65 has been formed is carried into a second organic material film forming apparatus and held by an electrostatic chuck. After the alignment between the substrate and the mask is performed and the mask is attracted to the magnet plate and brought into close contact with the substrate, a light-emitting layer 66R that emits red light is formed on a portion of the substrate 63 where elements that emit red light are disposed.

Similarly to the formation of the light-emitting layer 66R, the light-emitting layer 66G emitting green light is formed by the third organic material film-forming device, and the light-emitting layer 66B emitting blue light is formed by the fourth organic material film-forming device. After the completion of the formation of the light-emitting

layers

66R, 66G, and 66B, the electron transport layer 67 is formed in the entire display region 61 by the fifth film formation device. The electron transport layer 67 is formed as a layer common to the

light emitting layers

66R, 66G, and 66B of 3 colors.

The substrate on which the electron transport layer 67 has been formed is moved in a metallic vapor deposition material film formation apparatus, and a film is formed on the cathode 68.

Then, the substrate was moved to the plasma CVD apparatus to form the protective layer 70, thereby completing the organic EL display device 60.

After the substrate 63 having the insulating layer 69 patterned is carried into the film formation apparatus, if the substrate is exposed to an environment containing moisture and oxygen until the film formation of the protective layer 70 is completed, the light-emitting layer made of an organic EL material may be deteriorated by moisture and oxygen. Therefore, in this example, the substrate is carried in and out between the film deposition apparatuses in a vacuum atmosphere or an inert gas atmosphere.

The above embodiments are merely examples of the present invention, and the present invention is not limited to the configurations of the above embodiments, and may be appropriately modified within the scope of the technical idea thereof.

Claims

1. A film forming apparatus for forming a film on a substrate through a mask by a film forming material discharged from a film forming source in a chamber,

the film forming apparatus includes a plurality of adhesion preventing members disposed in the chamber and configured to adhere a film forming material scattered from the film forming source,

the plurality of adhesion preventing members are different in angle between an opposing surface of the adhesion preventing member opposing the film formation source and a normal line of the film formation surface of the substrate depending on a distance from the mask in a direction of the normal line.

2. The film forming apparatus according to claim 1,

the longer the anti-adhesion members are from the mask in the direction of the normal line, the smaller the angle of the opposing surface from the normal line.

3. A film forming apparatus for forming a film on a substrate through a mask by a film forming material discharged from a film forming source in a chamber,

the film forming apparatus includes:

4. The film forming apparatus according to claim 3,

the film forming apparatus further includes a third adhesion prevention member disposed in the chamber, having a distance from the mask larger than a distance from the second adhesion prevention member to the mask, and adhering a film forming material scattered from the film forming source,

a third angle between a third opposing surface of the third adhesion prevention member opposing the film formation source and the normal line is smaller than the second angle.

5. A film forming apparatus for forming a film on a substrate through a mask by a film forming material discharged from a film forming source in a chamber,

6. The film forming apparatus according to claim 5,

the anti-adhesion member is provided so that an extension line of a straight line connecting an end portion connected to the wall surface and the center side end portion passes through the center of the mask.

7. The film forming apparatus according to any one of claims 1 to 6,

the surface of the anti-adhesion member facing the film formation source is mirror-finished.

8. The film forming apparatus according to any one of claims 1 to 6,

the surface of the adhesion preventing member facing the wall surface of the chamber is mirror-finished.

9. A film-forming method characterized in that,

the film formation device according to any one of claims 1 to 6, wherein a film formation material is formed on a substrate through a mask in a chamber of the film formation device.

10. A method of manufacturing an electronic device, characterized in that,

an electronic device manufactured by using the film formation method according to claim 9.