JP2021070603A - Method for breaking bonded substrate and method for dividing stress substrate - Google Patents

Abstract

To provide a method for suitably and surely breaking a substrate bonded on a ground substrate by resins having different thermal shrinkages.SOLUTION: A method for breaking a bonded substrate comprises: the bonding step of bonding a bonded substrate while deforming the bonded substrate into a flat shape by contacting one main surface of a ground substrate to a holding tape horizontally stretched while pressing the bonded substrate from a side of the other main surface; the scribing step of forming a scribe line along a breaking schedule position of the bonded substrate by pressure-contacting and rolling a scribing wheel on the other main surface along the break schedule position to extend a vertical crack along the break schedule position; and the break step of breaking the ground substrate by pushing a break bar by a predetermined pushing amount from the side of the one main surface. In the scribing step, a scribe load applied to the ground substrate is set so that a ratio of an expansion depth of the vertical crack to a thickness of the ground substrate is 5-30%.SELECTED DRAWING: Figure 3

Description

The present invention relates to the division of a substrate, and more particularly to the division of a bonded substrate formed by bonding a resin to a brittle material substrate.

A bonded substrate in which a resin is bonded to a brittle material substrate such as a glass wafer is used as various mother substrates such as electronic components. Since such a bonded substrate is usually divided into a large number of pieces and used, there is a certain need to divide the bonded substrate with high accuracy.

Japanese Unexamined Patent Publication No. 2015-070267

Some of the bonded substrates as described above are warped (curved) in a form in which the resin side is convex or concave due to the difference between the shrinkage rate of the resin and the shrinkage rate of the underlying substrate. There is. A method for appropriately and surely dividing a bonded substrate having such a warp (curvature) has not always been found.

The present invention has been made in view of the above problems, and an object of the present invention is to provide a method capable of appropriately and surely dividing a bonded substrate in which a resin having a heat shrinkage ratio different from that of the base substrate is bonded to the base substrate. And.

In order to solve the above problems, in the invention of claim 1, a resin having a heat shrinkage rate different from that of the base substrate is bonded to one main surface of the base substrate, and the resin side is curved in a convex or concave shape. A holding tape in which the laminated substrate is divided at a predetermined planned division position, and the other main surface of the base substrate is horizontally stretched while pressing the bonded substrate from the one main surface side. The scribing wheel is attached to the holding tape while deforming the bonded substrate into a flat shape by contacting with the holding tape, and along the planned division position of the bonded substrate attached to the holding tape. Is pressed and rolled on one of the main surfaces to form a scribing line along the planned division position on the base substrate, and vertical cracks along the planned division position are extended in the thickness direction of the base substrate. , A break step of dividing the base substrate by pushing a break bar from the other main surface side of the base substrate with a predetermined pushing amount, and the vertical crack in the scribing step. The scribing that the scribing wheel applies to the base substrate when the scribing wheel is pressure-welded and rolled on one of the main surfaces so that the ratio of the extension depth to the thickness of the base substrate is 5% to 30%. It is characterized by setting a load.

The invention of claim 2 is the method for dividing a bonded substrate according to claim 1. In the bonded substrate, the resin side is warped in a convex shape, and in the scribe step, the one main surface is said to be the same. It is characterized in that the upper surface of the base substrate is used, and the other main surface is used as the upper surface of the base substrate in the break step.

The invention of claim 3 is the method for dividing a bonded substrate according to claim 1. In the bonded substrate, the base substrate side is warped in a convex shape, and in the scribe step, the one main surface is used. It is characterized in that the upper surface of the base substrate is used, and the other main surface is used as the upper surface of the base substrate in the break step.

The invention of claim 4 is a method of dividing a stress substrate having different stress directions acting in the in-plane direction on one main surface side and the other main surface side at a predetermined planned division position, and is horizontal. In a mode in which the other main surface is brought into contact with the holding tape stretched on the holding tape, the stress substrate is attached to the holding tape in a flat shape, and scribing is performed along the planned division position of the stress substrate. By pressure-welding and rolling the wheel on one of the main surfaces, a scribing line is formed on the stress substrate along the planned division position, and vertical cracks along the planned division position are extended in the thickness direction of the stress substrate. The scribing step is provided with a scribing step and a breaking step of dividing the stress substrate by pushing the break bar from the other main surface side of the stress substrate with a predetermined pushing amount. In the scribing step, the vertical is provided. The scribing wheel applies to the stress substrate when the scribing wheel is pressure-welded and rolled on one of the main surfaces so that the ratio of the crack extension depth to the thickness of the stress substrate is 5% to 30%. It is characterized by setting a scribing load.

The invention of claim 5 is the method for dividing a stress substrate according to claim 4, wherein in the stress substrate, tensile stress acts in the in-plane direction on the one main surface side, and on the other main surface side. A compressive stress acts in the in-plane direction, and in the scribing step, the one main surface is the upper surface of the stress substrate, and in the break step, the other main surface is the upper surface of the stress substrate. And.

The invention of claim 6 is the method for dividing a stress substrate according to claim 4, wherein in the stress substrate, compressive stress acts in the in-plane direction on the one main surface side, and on the other main surface side. A tensile stress acts in the in-plane direction, and in the scribing step, the one main surface is the upper surface of the stress substrate, and in the break step, the other main surface is the upper surface of the stress substrate. And.

According to the inventions of claims 1 to 3, a bonded substrate that is warped (curved) in a form in which the resin side is convex or the base substrate side is convex can be appropriately and surely divided. ..

According to the inventions of claims 4 to 6, stress substrates in which stress acts on one main surface side and the other main surface side in different directions can be suitably and surely divided.

It is a figure which shows typically the state of the scribe processing with respect to the bonded substrate 10. It is a figure which shows the state of the bonded substrate 10 before scribe processing. It is a figure which shows the stress state in the bonded substrate 10 at the time of starting a scribe process. It is a figure which shows the influence which the value of the scribe load L has on the scribe processing. It is a figure which shows the influence which the value of the scribe load L has on the scribe processing. It is a figure which shows the state of the break process with respect to the bonded substrate 10 schematically. It is a figure which shows the state of the bonded substrate 10 before scribe processing. It is a figure which shows the stress state in the bonded substrate 10 at the time of starting a scribe process. It is a figure which shows the state of the scribe processing. The magnitude of the scribe load L in the five types of scribe processing, the ratio d1 / t of the extension depth d1 of the vertical crack CR specified from the captured image of the cross section to the thickness t, and the quality of the split quality judged from the captured image. It is a figure which shows in a list with a part of the captured image of the sectional cross section.

<First Embodiment>
Hereinafter, the outline of the division process performed in the first embodiment of the present invention will be described. The division process is realized by performing a scribe process and a break process that follows the scribe process.

FIG. 1 is a diagram schematically showing a state of scribe processing on the bonded substrate 10 performed in the present embodiment. FIG. 2 is a diagram showing a state of the bonded substrate 10 before being subjected to scribe processing. FIG. 3 is a diagram showing a stress state in the bonded substrate 10 when the scribe process is started.

The bonded substrate 10 generally has a configuration in which the resin 2 is bonded on one main surface 1a of the base substrate 1.

The base substrate 1 is a brittle material substrate having a plane size (diameter) of about 20 cm to 30 cm and a thickness t of about 0.1 mm to 1.0 mm, and a glass wafer is exemplified.

It is assumed that the resin 2 has a thickness of about 1 μm to 50 μm and has a shrinkage rate (heat shrinkage rate) smaller than that of the base substrate 1. The resin 2 may be provided with metal wiring or electrodes inside or on the surface, or solder balls may be formed on the surface.

In the present embodiment, the bonded substrate 10 having such a configuration is divided at a predetermined planned division position P. In the case shown in FIG. 1, the planned division position P is set at the position of the gap of the resin 2 called the street. Therefore, in the case shown in FIG. 1, what is actually the scribe target surface is one main surface 1a of the base substrate 1 exposed on the street. The width of the street is, for example, about 20 μm to 200 μm.

In the present embodiment, for the sake of simplicity, the resin 2 is divided into two parts in the left-right direction in the drawing, and one street is formed between these parts. In practice, a large number of streets may be formed at predetermined intervals in each of the two directions orthogonal to each other in the plane of the bonded substrate 10, in which case, in each of the large number of streets, Scribing processing and break processing will be performed.

The scribe processing is performed using a known scribe device 100. As shown in FIG. 1, the scribe device 100 includes a stage 101 capable of downwardly supporting a scribe object in a horizontal posture, and a scribing wheel (cutter wheel) 102 which is a disk-shaped member having a cutting edge 102e at an outer edge portion. , Mainly prepared. The scribing wheel 102 is held by the scribing device 100 in a rotatable manner in a vertical plane.

The scribing wheel 102 is a disk-shaped member (scribing tool) having a diameter of 2 mm to 3 mm, and has an isosceles right triangular cutting edge 102e on the outer peripheral surface. Further, at least the cutting edge 102e is made of diamond. Further, the angle (edge angle) α of the cutting edge 102e is preferably 100 ° to 135 °.

The bonded substrate 10 is mounted and fixed on the stage 101 in such a manner that one main surface 1a side provided with the resin 2 is the upper surface (scribe target surface) and the other main surface 1b side is the mounting surface with respect to the stage 101. Positioned.

More specifically, prior to the scribing process, the bonding substrate 10 has the other main surface 1b attached to a holding tape (for example, dicing tape) DT that is previously attached to a substantially annular ring (for example, dicing ring) RG. It is said that it is in a state of being. Then, in such an embodiment, the ring RG in which the bonded substrate 10 is attached to the holding tape DT is mounted and fixed on the stage 101, so that the bonded substrate 10 is mounted and fixed on the stage 101.

However, in FIG. 1, the bonded substrate 10 having a flat shape in the horizontal direction is mounted and fixed on the stage 101, but the actual bonded substrate 10 is mounted and fixed at least before the stage 101 is mounted. As shown in FIG. 2, one main surface 1a side on which the resin 2 is formed is slightly convex, and the other main surface 1b side is concave. That is, the bonded substrate 10 is warped (curved). This is a result of the bonded substrate 10 being cooled to room temperature after the formation of the resin layer to be the resin 2 on the base substrate 1 under a predetermined temperature.

Specifically, the resin 2 having a shrinkage ratio smaller than that of the base substrate 1 is bonded to the main surface 1a side, which is less likely to shrink than the other main surface 1b side, as shown in FIG. Warpage (curvature) is occurring. At the same time, in such a state, as shown in FIG. 2, a compressive stress fc is generated in the resin 2 in the in-plane direction.

In the present embodiment, the bonded substrate 10 having such a warp (curvature) is attached to the holding tape DT while being pressed by an external force from the side of the main surface 1a, and then placed on the stage 101. By fixing it, it is deformed into a flat shape in the horizontal direction as shown in FIG. 1, and after eliminating the warp (curvature), the scribe process is performed.

When the bonding substrate 10 is attached with deformation, the other main surface 1b is stretched horizontally while applying an external force (adhesive force) in the direction of eliminating the warp on the base substrate 1 by pressing with an external force from the main surface 1a side. It is realized by contacting with the provided holding tape DT. More specifically, in the deformation, the base substrate 1 is expanded outward in the in-plane direction in the vicinity of the other main surface 1b in contact with the holding tape DT by the action of an external force, and the other main surface is the opposite surface. In the vicinity of the surface 1a, the base substrate 1 is shrunk inward in the in-plane direction.

Then, as a result of such deformation, in other words, as a result of the action of an external force on the base substrate 1, inside the base substrate 1 when starting the execution of the scribe process, as shown in FIG. 3, the base substrate 1 On the one hand, the tensile stress Fa is generated in the vicinity of the main surface 1a, and the compressive stress Fb is generated in the vicinity of the other main surface 1b.

On the other hand, the compressive stress fc acted on the resin 2 due to the warp (curvature) of the bonded substrate 10 before being attached to the holding tape DT, but the compressive stress is relaxed after the application. This is the effect of the external force acting in the direction of contracting the base substrate 1 inward in the in-plane direction in the vicinity of the main surface 1a.

In the present embodiment, the scribe process is performed on the bonded substrate 10 under such a stress state.

Generally speaking, in the scribe process, as shown in FIGS. 1 and 3, the planned division position P and the rotating surface of the scribing wheel 102 are located in the same vertical plane (plane perpendicular to the drawing). The scribing wheel 102 is pressure-welded and rolled along the planned division position P on the base substrate 1 exposed on the street while applying a predetermined scribe load L. As a result, the scribe line SL is formed near the surface of the base substrate 1, and further, the vertical crack CR extends (penetrates) from the scribe line SL in the thickness direction along the planned division position P. The pressure contact rolling of the scribing wheel 102 is realized, for example, by moving the stage 101 horizontally with respect to the scribing wheel 102 by a drive mechanism (not shown).

The problem here is the setting of the scribe load L. 4 and 5 are diagrams showing the effect of the value of the scribe load L on the scribe processing.

In the scribe treatment, the vertical crack CR is usually at a predetermined extension depth (distance from one main surface 1a to the tip of the vertical crack CR in the present embodiment) d according to the magnitude L0 of the scribe load L. ,It is formed.

However, in the present embodiment, since the tensile stress Fa is generated inside and the main surface 1a side is subject to the scribe treatment, the vertical crack CR is more likely to extend than in the non-stressed state. ing. Therefore, the vertical crack CR is in a state where it is easy to extend even when the scribe load L is smaller than in the stress-free state.

Not only that, as shown in FIG. 4, when the magnitude L0 of the scribe load L is a certain critical value Lc or more (L0 ≧ Lc), the vertical crack CR is a depth d having a critical depth d = dc or more. Not only does it reach = d0, but it also causes an unintended breakage (also referred to as “first run”) of the base substrate 1 from its tip toward the other main surface 1b. Since the fracture surface FR is not necessarily formed along the planned division position P, the bonded substrate 10 is not suitably divided when such an unintended fracture occurs. It should be noted that the breakage may occur in a mode of crossing the bonded substrate 10 or may occur only partially.

The critical depth d = dc is the extension depth of the vertical crack CR that the base substrate 1 does not break from the tip as long as the extension of the vertical crack CR is shallower than this, and the scribe load L is It is assumed that the extension depth of the vertical crack CR when = Lc.

Therefore, in the present embodiment, as shown in FIG. 5, the magnitude L1 having a critical value less than Lc is reached so that the arrival of the vertical crack CR stays at a certain depth d = d1 having a critical depth d = dc. The scribe load L is applied at. Roughly speaking, a scribe load L may be applied so that the extension of the vertical crack CR is surely stayed in the region where the tensile stress acts in the vicinity of one main surface 1a of the base substrate 1. In such a case, the magnitude L = L1 of the scribe load L is the extension of the vertical crack CR as compared with the case where the same scribe treatment is performed on the brittle material substrate in the stress-free state formed of the same material and the same thickness. It is set so that the depth is small. Such a scribe treatment in which the extension depth of the vertical crack CR is small is referred to as a low-penetration scribe.

The suitable size of the scribe load L when actually performing low penetration scribe varies depending on the thickness of the base substrate 1, but the extension depth d1 of the vertical crack CR is 5% to 30% of the thickness t of the base substrate 1. It is preferable to set it to be%. The specific value may be set based on the critical value Lc of the scribe load L that gives the critical depth d = dc, which is experimentally specified or estimated in advance.

The bonded substrate 10 for which the scribe processing has been completed is subsequently subjected to a break processing. FIG. 6 is a diagram schematically showing a state of break processing on the bonded substrate 10. The break process can be performed using a known break device 200.

The break device 200 is a plate-like member having at least a surface portion made of an elastic body, a support 201 capable of downwardly supporting a break object in a horizontal posture, and a cutting edge 202e having a triangular cross section in the vertical direction. 202 is mainly provided.

As the support 201, for example, a configuration in which a plate-shaped elastic body is placed and fixed on the upper surface of a metal member having a flat upper surface can be adopted.

The break bar 202 is a plate-shaped metal (for example, cemented carbide) member provided with an isosceles right triangular cutting edge 202e extending in the blade crossing direction. In FIG. 6, the break bar 202 is shown so that the blade crossing direction is perpendicular to the drawing. Further, the blade length of the break bar 202 is larger than the plane size of the bonded substrate 10 so that a break can be performed in the entire blade length direction by one break operation.

FIG. 6 shows a state in which a certain scheduled division position P, in which a vertical crack CR is formed by scribe processing, is targeted for break processing.

The bonded substrate 10 after the scribe treatment is subjected to the break processing in a state of being attached to the holding tape DT stretched on the ring RG. However, as shown in FIG. 6, during the break process, the main surface side, which was exposed during the scribe process, is covered with the protective film PF. The protective film PF is coated with the resin 2 in such a manner that the edge portion thereof is attached to the ring RG. The bonded substrate 10 after the scribe treatment is placed on the support 201 together with the ring RG, the holding tape DT, and the protective film PF in a posture in which the other main surface side is upward and the one main surface side is downward. It is fixed. That is, the protective film PF is placed and fixed in such a manner that it comes into contact with the support 201.

Then, when the break operation is performed along the planned division position P, the bonded substrate 10 is placed and fixed on the support 201 so that the individual planned division positions P and the blade crossing direction of the break bar 202 are parallel to each other. To. Then, for each planned division position P, the break bar 202 is indicated by an arrow after the planned division position P and the break bar 202 are positioned so as to be located in the same vertical plane (plane perpendicular to the drawing). As shown by AR, it is lowered toward the planned division position P. The break bar 202 is further pushed by a predetermined distance (referred to as a pushing amount) z even after the cutting edge 202e comes into contact with the holding tape DT.

In this way, when the break bar 202 is lowered toward the planned division position P of the bonded substrate 10 in the posture in which the scribe line SL is positioned downward and further pushed in with a predetermined pushing amount, the scribe bar 202 is formed by the scribe process. The vertical crack CR that had been formed further extends in the thickness direction along the planned division position P, and extends to the other main surface 1b of the bonded substrate 10 that is the upper surface, and more specifically, with respect to the holding tape DT of the base substrate 1. It reaches the surface to be attached.

In the base substrate 1 before the scribe treatment, tensile stress was applied on one main surface 1a side and compressive stress was applied on the other main surface 1b side, but the former was the extension of vertical crack CR by scribe treatment. At the time when the break process is executed, the latter is also relaxed as compared with that before the scribe process, and is preferably in a stress-free state. Therefore, the bonded substrate 10 is suitably and surely divided as the break bar 202 is lowered.

As described above, according to the present embodiment, a resin having a smaller heat shrinkage rate than that of the base substrate is bonded to one main surface side of the base substrate, so that the resin side is warped in a convex shape. When a bonded (curved) bonded substrate is divided by a scribe treatment and a break treatment, a tensile stress is intentionally generated on one main surface side of the base substrate on the one main surface of the base substrate. On the other hand, the scribe process is performed, and then the break process is performed by bringing the break bar into contact with the opposite surface side, whereby the bonded substrate can be appropriately and surely divided.

<Second embodiment>
FIG. 7 is a diagram showing a state of the bonded substrate 20 before being subjected to scribe processing in the second embodiment of the present invention. FIG. 8 is a diagram showing a stress state in the bonded substrate 20 when the scribe process is started. FIG. 9 is a diagram showing a state of scribe processing in the present embodiment.

Like the bonded substrate 10 according to the first embodiment, the bonded substrate 20 has a configuration in which the resin 12 is bonded on one main surface 11a of the base substrate 11. However, unlike the bonded substrate 10, in the bonded substrate 20, the resin 12 has a larger shrinkage rate (heat shrinkage rate) than the underlying substrate 11. In the bonded substrate 20, the one main surface 11a side to which the resin 12 is bonded tends to shrink as compared with the other main surface 11b side, so that the base substrate side becomes convex as shown in FIG. Curvature) is occurring. That is, in the bonded substrate 20, one main surface 11a side on which the resin 12 is formed is slightly concave, and the other main surface 11b side is convex. At the same time, in such a state, as shown in FIG. 7, a tensile stress fs is generated in the resin 12 in the in-plane direction.

The division method in the first embodiment described above can also be applied to the bonded substrate 20 as shown in FIG. 7. Such a division process is also realized by performing a scribe process and a break process following the scribe process, as in the first embodiment.

The scribe process can be performed using a known scribe device 100 as in the first embodiment. Similar to the bonded substrate 10, the bonded substrate 20 is also attached to the holding tape DT while being pressed by an external force from the side of the main surface 11a, and then mounted and fixed on the stage 101, as shown in FIG. After deforming the shape into a flat shape in the horizontal direction to eliminate warpage (curvature), scribe processing is performed. More specifically, in the deformation for eliminating the warp, the base substrate 11 is shrunk inward in the in-plane direction in the vicinity of the other main surface 11b in contact with the holding tape DT by the action of an external force, and on the opposite surface. On the other hand, in the vicinity of the main surface 11a, the base substrate 11 is spread outward in the in-plane direction.

As a result of such deformation, a compressive stress Fc is generated in the vicinity of one main surface 11a of the base substrate 11 and in the vicinity of the other main surface 11b inside the base substrate 11 when the execution of the scribe processing is started, as shown in FIG. The tensile stress Fd is generated in.

On the other hand, before the resin 22 was attached to the holding tape DT, a tensile stress fs acted on the resin 22 due to the warp (curvature) of the bonded substrate 20, but the tensile stress is relaxed after the application. This is the effect of the external force acting in the direction of expanding the base substrate 11 outward in the in-plane direction in the vicinity of the main surface 11a.

In the present embodiment, the scribe process is performed on the bonded substrate 20 under such a stress state.

In such a case, while the compressive stress Fc is generated inside, the main surface 11a side is subject to the scribe treatment, so that the vertical crack CR is less likely to extend than in the non-stressed state. Therefore, also in the present embodiment, as shown in FIG. 9, the vertical crack CR is set to a magnitude L2 less than the critical value Lc so that the arrival of the vertical crack CR stays at a certain depth d = d2 less than the critical depth d = dc. By applying the scribe load L, that is, by performing the low penetration scribe, the destruction of the base substrate 11 due to the unintended vertical crack CR can be avoided. Roughly speaking, a scribe load L may be applied so that the extension of the vertical crack CR is surely stayed in the region where the compressive stress Fc near one main surface 11a of the base substrate 11 acts.

Also in this embodiment, the suitable size of the scribe load L when actually performing low penetration scribe differs depending on the thickness of the base substrate 11, but the extension depth d2 of the vertical crack CR is the base substrate 11. It is preferable to set the thickness to be 5% to 30% of t.

If the scribe process is performed in such an embodiment and then the break process is performed using a known break device 200 as in the first embodiment, the bonded substrate 20 can be suitably divided. ..

<Modification example>
When one main surface 1a of the base substrate 1 is completely covered with the resin 2, only the resin 2 in the portion corresponding to the planned division position P is removed in advance, and then the division is performed in the main part described above. You can do it. The same applies when one main surface 11a of the base substrate 11 is completely covered with the resin 12.

The division of the bonded substrate according to the first embodiment described above is applied to a stress substrate in which a tensile stress acts in the in-plane direction on one main surface side and a compressive stress acts in the in-plane direction on the other main surface side. Is also applicable. That is, after the stress substrate is attached to the holding tape in a flat shape in such a manner that the other main surface is brought into contact with the holding tape, the same conditions as those in the above-described embodiment are applied to one main surface side of the stress substrate. The stress substrate can be suitably divided by performing the scribe treatment in the above manner and then performing the break treatment in such a manner that the break bar is brought into contact with the other main surface. If the stress substrate before being attached to the holding tape is warped, of course, by pressing the stress substrate from one main surface side and bringing the other main surface of the stress substrate into contact with the horizontally stretched holding tape. , It may be deformed into a flat shape.

Similarly, in the division of the bonded substrate in the second embodiment described above, a stress substrate in which a compressive stress acts in the in-plane direction on one main surface side and a tensile stress acts in the in-plane direction on the other main surface side. It can also be applied to.

Five bonded substrates 10 in which the resin 2 is bonded to one main surface 1a of the glass wafer as the base substrate 1 and the resin 2 side is convex (curved) are prepared, and each of them is prepared. On the holding tape DT stretched on the ring RG so that compressive stress is generated on the other main surface 1b side of the base substrate 1 and tensile stress is generated on the other main surface 1a side as in the above-described embodiment. After pasting, scribe processing was performed under five different conditions.

Specifically, the thickness t of the base substrate 1 was set to 0.15 mm, and the scribe load L was changed to five levels of 1.2N, 2.2N, 3.5N, 3.7N, and 4.0N. As the scribing wheel 102, a wheel having a cutting edge angle α of 125 ° was used. The scribe speed was 100 mm / sec.

Further, a break process was performed following the scribe process, and the cross-sectional quality of the obtained partial cross section was evaluated.

FIG. 10 shows the ratio of the magnitude of the scribe load L in the above five types of scribe processing to the thickness t of the extension depth d1 of the vertical crack CR specified from the captured image of the sectional cross section (“depth ratio” in FIG. 10”. It is a figure which shows a list of d1 / t, the quality of the division quality judged from the captured image, and a part of the captured image of the divided cross section. Regarding the quality of the division quality (described as "cross-section quality" in FIG. 10), if a division cross section of good quality is obtained, enter "○" (circle), and if not obtained. Is marked with an "x" (cross mark). The depth ratio d1 / t is shown as a percentage.

As shown in FIG. 10, when the magnitude of the scribe load L was 3.7 N and 4.0 N, the depth ratio d1 / t was about 50% or more, and the quality of the sectional cross section was not good. Specifically, the fracture had occurred at the time after the scribe treatment.

On the other hand, when the magnitude of the scribe load L was 1.2 N, 2.2 N, and 3.5 N, the quality of the partial cross section after the break treatment was good. In such a case, the depth ratio d1 / t remained at 30% or less at the maximum, and the range of 5% to 30% was satisfied.

The above results are obtained for the bonded substrate 10 in which the resin 2 is bonded to the main surface 1a and is warped (curved) in a form in which the side of the resin 2 is convex, as in the above-described embodiment. , Extension of vertical crack CR in a state where stress is intentionally generated so that compressive stress is generated on the other main surface 1b side of the base substrate 1 and tensile stress is generated on the other main surface 1a side which is the scribe target surface. It means that the bonded substrate 10 can be suitably divided by performing the scribe treatment so that the ratio of the depth to the thickness of the underlying substrate is in the range of 5% to 30%.

1 Base board 1a (base board) One main surface 1b (base board) Other main surface 2 Resin 10 Laminated board 100 Scribing device 101 Stage 102 Scribing wheel 102e (Scribbing wheel) Cutting edge 200 Break device 201 Support 202 Break Bar 202e (break bar) cutting edge CR vertical crack DT holding tape FR fracture surface Fa tensile stress Fb, f compressive stress L scribing load P planned division position PF protective film RG ring SL scribe line

Claims (6)

A resin having a heat shrinkage rate different from that of the base substrate is bonded to one main surface of the base substrate, and the bonded substrate whose resin side is curved in a convex or concave shape is divided at a predetermined planned division position. How to do
By pressing the bonded substrate from the one main surface side and bringing the other main surface of the base substrate into contact with the holding tape stretched horizontally, the bonded substrate is deformed into a flat shape and held. The sticking process to stick to the tape and
A scribe line along the planned division position is provided on the base substrate by pressure-welding and rolling the scribing wheel on one of the main surfaces along the planned division position of the bonded substrate attached to the holding tape. A scribe step of forming and extending vertical cracks along the planned division position in the thickness direction of the base substrate.
A break step of dividing the base substrate by pushing the break bar from the other main surface side of the base substrate with a predetermined pushing amount.
With
In the scribe step, the scribing is performed when the scribing wheel is pressure-welded and rolled on one of the main surfaces so that the ratio of the extension depth of the vertical crack to the thickness of the base substrate is 5% to 30%. Sets the scribe load that the wheel applies to the substrate.
A method of dividing a bonded substrate, which is characterized in that. The method for dividing a bonded substrate according to claim 1.
In the bonded substrate, the resin side is warped in a convex shape.
In the scribe step, the one main surface is used as the upper surface of the base substrate.
In the break step, the other main surface is used as the upper surface of the base substrate.
A method of dividing a bonded substrate, which is characterized in that. The method for dividing a bonded substrate according to claim 1.
In the bonded substrate, the base substrate side is warped in a convex shape.
In the scribe step, the one main surface is used as the upper surface of the base substrate.
In the break step, the other main surface is used as the upper surface of the base substrate.
A method of dividing a bonded substrate, which is characterized in that. This is a method of dividing a stress substrate having different stress directions acting in the in-plane direction on the main surface side and the other main surface side at a predetermined planned division position.
In a mode in which the other main surface is brought into contact with the horizontally stretched holding tape, the stress substrate is attached to the holding tape in a flat shape along the planned division position of the stress substrate. By crimping and rolling the scribing wheel on one of the main surfaces, a scribe line is formed on the stress substrate along the planned division position, and vertical cracks along the planned division position are formed in the thickness direction of the stress substrate. The scribe process and the extension process
A break step of dividing the stress substrate by pushing the break bar from the other main surface side of the stress substrate with a predetermined pushing amount.
With
In the scribe step, the scribing is performed when the scribing wheel is pressure-welded and rolled on one of the main surfaces so that the ratio of the extension depth of the vertical crack to the thickness of the stress substrate is 5% to 30%. Sets the scribe load that the wheel applies to the stress substrate,
A method for dividing a stress substrate, which is characterized in that. The method for dividing a stress substrate according to claim 4.
In the stress substrate, tensile stress acts in the in-plane direction on the one main surface side, and compressive stress acts in the in-plane direction on the other main surface side.
In the scribe step, the one main surface is used as the upper surface of the stress substrate.
In the break step, the other main surface is used as the upper surface of the stress substrate.
A method for dividing a stress substrate, which is characterized in that. The method for dividing a stress substrate according to claim 4.
In the stress substrate, compressive stress acts in the in-plane direction on the one main surface side, and tensile stress acts in the in-plane direction on the other main surface side.
In the scribe step, the one main surface is used as the upper surface of the stress substrate.
In the break step, the other main surface is used as the upper surface of the stress substrate.
A method for dividing a stress substrate, which is characterized in that.

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