JP2021061400A - Substrate processing facility and substrate processing method - Google Patents

Abstract

To provide a substrate processing device capable of improving processing efficiency using a supercritical fluid.SOLUTION: A substrate processing device includes: a high pressure chamber 500; a fluid supply source 610 which provides a process fluid to the high pressure chamber; a fluid supply unit 560; an exhaust unit 550 which exhausts the process fluid in the high pressure chamber; and a pre-vent unit 570 which vents process fluids remaining inside supply lines 561 to 565. The fluid supply unit includes: a supply line linking the high pressure chamber and the fluid supply source; supply values 581 and 582 installed in the supply line; and line heaters 592 and 593 provided to the supply line. The exhaust unit includes: an exhaust line 551 linked to the high pressure chamber; and an exhaust valve 584 installed in the exhaust line. The pre-vent unit includes: a first pre-vent line 571 in which one end is linked to the supply line of the fluid supply unit and the other end is vented; and a first pre-vent valve 585 installed in the first pre-vent line.SELECTED DRAWING: Figure 1

Description

The present invention relates to a substrate processing facility and a substrate processing method.

The semiconductor process includes a process of cleaning a thin film, foreign substances, particles, etc. on a substrate. Is the pattern collapsed by the surface tension of the chemical solution in the process of drying the chemical solution after the wet process such as the carving step and the cleaning step is completed by reducing the design rule of the semiconductor element? Or, bridging defects in which adjacent patterns stick to each other frequently occur. In addition, fine particles that are deeply present between patterns cause defects in the substrate.

Recently, supercritical fluids have been used in the process of cleaning substrates. According to one example, a liquid treatment chamber for supplying a treatment liquid to a substrate to treat the substrate and a high-pressure chamber for removing the treatment liquid from the substrate by using a fluid in a supercritical state after the liquid treatment are provided, respectively. The substrate processed in the processing chamber is carried into the high-pressure chamber by the transfer robot.

Korean Patent Publication No. 10-2020-0001481

The present inventor has discovered that among the substrates input in the supercritical process using a supercritical fluid, the first substrate and the second and subsequent substrates generate detection, and let's solve this. The present invention was derived.

An object of the present invention is to provide a substrate processing equipment and a substrate processing method capable of improving processing efficiency when processing a substrate using a supercritical fluid.

Another object of the present invention is to provide a substrate processing equipment and a substrate processing method in which particles supplied to the substrate are reduced when the substrate is processed using a supercritical fluid.

The object of the present invention is not limited herein, and any other object not mentioned should be clearly understood by those skilled in the art from the description below.

The present invention provides an apparatus for processing a substrate. In one embodiment, the apparatus for processing the substrate includes a high-pressure chamber provided with a processing space in which the process of processing the substrate using the process fluid is performed, and a fluid supply source for providing the process fluid to the high-pressure chamber. A fluid supply unit that supplies the process fluid to the processing space of the high-pressure chamber, an exhaust unit that exhausts the process fluid in the high-pressure chamber, and a prevent vent that vents the process fluid remaining inside the supply line. The fluid supply unit includes a supply line connecting the high pressure chamber and the fluid supply source, a supply valve installed in the supply line, and a heater provided in the supply line. The exhaust unit includes an exhaust line connected to the high pressure chamber and an exhaust valve installed in the exhaust line, and the prevent unit is one end connected to the supply line of the fluid supply unit, and the like. It includes a first preventive line whose ends are vented and a first preventive valve installed in the first preventive line.

In one embodiment, the prevent unit has a second prevent line in which one end is connected to the exhaust line and the other end is connected to the first prevent line, and a second prevent valve installed in the second prevent line. And can be further included.

In one embodiment, the second prevent line can be provided with a diameter smaller than the diameter of the portion of the first prevent line connected to the second prevent line.

In one embodiment, the second prevent line is connected to the exhaust line upstream of the exhaust valve.

In one embodiment, the second preventive line is connected to the first preventive line downstream of the first preventive valve.

In one embodiment, the diameter of the portion of the first preventive line connected to the second preventive line can be provided smaller than the diameter of the portion upstream of the portion connected to the second preventive line.

In one embodiment, the controller further comprises a controller, wherein the supply valve, the first prevent valve, and the second prevent after the substrate is carried into the high pressure chamber and the high pressure chamber is closed. The valve and can be opened.

In one embodiment, the first prevent line is connected upstream of the supply valve by the supply line.

In one embodiment, the supply line includes an upper supply line connected to the upper part of the high pressure chamber and a lower supply line connected to the lower part of the high pressure chamber, and the first prevent line includes the lower supply line. Connected to the line.

In one embodiment, the supply valve is a first supply valve installed between the upper supply line and a branch point of the lower supply line at the fluid supply source and a second supply valve installed in the upper supply line. The first prevent line is connected to the lower supply line upstream of the second supply valve, including a supply valve and a third supply valve installed in the lower supply line.

In one embodiment, the prevent line can be connected to the supply line downstream of the heater.

In one embodiment, the prevent line can be connected to the supply line downstream of the heater.

In one embodiment, the prevent unit has a second prevent line in which one end is connected to the exhaust line and the other end is connected to the first prevent line, and a second prevent valve installed in the second prevent line. The second prevent valve can be further opened after the substrate is carried into the high pressure chamber and the high pressure chamber is closed.

The present invention also provides an apparatus for processing a substrate according to another viewpoint. In one embodiment, a liquid treatment chamber for supplying a treatment liquid to a substrate to treat the substrate, a supercritical chamber in which a step of treating the substrate using a process fluid in a supercritical state is performed, and the above-mentioned liquid. The liquid processing chamber includes a transfer robot that transfers a substrate between a processing chamber and a supercritical chamber, a controller, and the liquid processing chamber includes a support unit that supports the substrate, a nozzle that supplies a processing liquid onto the substrate, and the like. The supercritical chamber includes a cup that surrounds the support unit and provides a processing space, the supercritical chamber is a high pressure chamber provided with a processing space in which a process of processing a substrate using a process fluid is performed, and the high pressure. A fluid supply source that supplies the process fluid to the chamber, a supply line that connects the high pressure chamber and the fluid supply source, a supply valve installed in the supply line, a heater provided in the supply line, and the high pressure. The preventive unit includes an exhaust line for exhausting the process fluid in the chamber and a preventive unit for venting the process fluid remaining inside the supply line. One end of the preventive unit is connected to the supply line and the other end is connected to the supply line. A first preventive line to be vented and a first preventive valve installed in the first preventive line can be included.

The present invention provides an apparatus for processing a substrate. In one embodiment, the controller can open the first prevent valve as the substrate treatment proceeds by the liquid treatment chamber to initiate prevention of the supercritical chamber to the supply line.

In one embodiment, the controller may open the supply valve and the first prevent valve of the supercritical chamber before the substrate liquid-treated in the liquid treatment chamber is carried into the high-pressure chamber. it can.

In one embodiment, the prevent unit has a second prevent line in which one end is connected to the exhaust line and the other end is connected to the first prevent line, and a second prevent valve installed in the second prevent line. The controller can further open the second prevent valve after the substrate is carried into the high pressure chamber and the high pressure chamber is closed.

In one embodiment, the second preventive line can be provided with a smaller diameter than the first preventive line.

In one embodiment, the diameter of the portion of the first preventive line connected to the second preventive line can be provided smaller than the diameter of the portion upstream of the portion connected to the second preventive line.

In one embodiment, the treatment liquid is a leaning prevention liquid.

The present invention also provides a substrate processing method using a substrate processing apparatus. In one embodiment, the supply valve and the first prevent valve are opened before the substrate is carried into the high pressure chamber.

In one embodiment, the prevent unit has a second prevent line in which one end is connected to the exhaust line and the other end is connected to the first prevent line, and a second prevent valve installed in the second prevent line. The second prevent valve can be further opened after the substrate is carried into the high pressure chamber and the high pressure chamber is closed.

According to one embodiment of the present invention, the detection generation of the first substrate introduced in the supercritical step using the supercritical fluid is low.

Further, according to one embodiment of the present invention, when processing a substrate using a supercritical fluid, the processing efficiency can be improved.

Further, according to one embodiment of the present invention, when processing a substrate using a supercritical fluid, the number of particles supplied to the substrate can be reduced.

The effects of the present invention are not limited by the effects described above, and the effects not mentioned are clearly understood by those having ordinary knowledge in the art to which the present invention belongs from the present specification and the accompanying drawings. be able to.

It is a top view which shows typically the substrate processing equipment by one Embodiment of this invention. It is a drawing which shows one embodiment of the high pressure chamber 500 of FIG. 1 schematically. It is the schematic of the substrate processing apparatus by one Embodiment of this invention. It is a figure which showed the part which connects the 1st prevent line 571 and the 2nd prevent line 572. It is a drawing which showed the operating state by one Embodiment of this invention before the substrate to be processed is carried into a chamber. It is a drawing which showed the operating state by one Embodiment of this invention at the time when a substrate was carried into a high pressure chamber, and the high pressure chamber was closed. It is a drawing which shows the operating state of the substrate processing apparatus by one Embodiment of this invention for processing a substrate. It is a drawing which shows the operating state of the substrate processing apparatus by one Embodiment of this invention for processing a substrate. The method of processing a substrate according to one embodiment is illustrated. It is a figure which showed the processing step by one Embodiment of this invention. It is a figure which showed the processing step by another embodiment of this invention.

Hereinafter, embodiments of the present invention will be described in more detail with reference to the accompanying drawings. The embodiments of the present invention can be transformed into various embodiments and should not be construed as limiting the scope of the present invention to the following embodiments. The present embodiment is provided to further fully illustrate the invention to those with average knowledge in the art. Therefore, the shape of the elements in the drawings has been exaggerated to emphasize a clearer description.

FIG. 1 is a plan view schematically showing a substrate processing system according to an embodiment of the present invention.

Referring to FIG. 1, the substrate processing equipment includes an index module 10, a processing module 20, and a controller 30. According to one embodiment, the index module 10 and the processing module 20 are arranged along one direction. Hereinafter, the direction in which the index module 10 and the processing module 20 are arranged is defined as the first direction 92, and the direction perpendicular to the first direction 92 when viewed from above is defined as the second direction 94, and the first direction 92 and The direction that is completely perpendicular to the second direction 94 is defined as the third direction 96.

The index module 10 conveys the substrate W from the stored container 80 to the processing module 20, and stores the substrate W that has been processed by the processing module 20 in the container 80. The length direction of the index module 10 is provided in the second direction 94. The index module 10 has a load port 12 and an index frame 14. The load port 12 is located on the opposite side of the processing module 20 with respect to the index frame 14. The container 80 in which the substrate W is housed is placed in the load port 12. A plurality of load ports 12 may be provided, and the plurality of load ports 12 may be arranged along the second direction 94.

As the container 80, a sealing container such as a front open integrated pod (FOUP) can be used. The container 80 can be placed in the load port 12 by a transfer means (not shown) such as an overhead transfer, an overhead conveyor, or an automatic guided vehicle or an operator.

An index robot 120 is provided for the index frame 14. A guide rail 140 whose length direction is provided in the second direction 94 is provided in the index frame 14, and the index robot 120 can be provided movably on the guide rail 140. The index robot 120 includes a hand 122 on which the substrate W is placed, which can be provided for forward and backward movement, rotation about the third direction 96, and movable along the third direction 96. A plurality of hands 122 are provided so as to be separated in the vertical direction, and the hands 122 can move forward and backward independently of each other.

The processing module 20 includes a buffer unit 200, a transfer chamber 300, a liquid processing chamber 400, and a high pressure chamber 500.

The buffer unit 200 provides a space in which the substrate W carried into the processing module 20 and the substrate W carried out from the processing module 20 temporarily stay.

The liquid treatment chamber 400 carries out a liquid treatment step of supplying a liquid onto the substrate W to liquidate the substrate W.

The high pressure chamber 500 carries out a drying step of removing the liquid remaining on the substrate W.

The transfer chamber 300 transfers the substrate W between the buffer unit 200, the liquid treatment chamber 400, and the high pressure chamber 500. The transport chamber 300 can be provided with its length direction in the first direction 92.

The buffer unit 200 can be arranged between the index module 10 and the transfer chamber 300. The liquid treatment chamber 400 and the high pressure chamber 500 can be arranged on the side of the transfer chamber 300. The liquid treatment chamber 400 and the transfer chamber 300 can be arranged along the second direction 94. The high pressure chamber 500 and the transfer chamber 300 can be arranged along the second direction 94. The buffer unit 200 can be located at one end of the transfer chamber 300.

According to one example, the liquid treatment chamber 400 is arranged on both sides of the transfer chamber 300, the high pressure chamber 500 is arranged on both sides of the transfer chamber 300, and the liquid treatment chamber 400 is arranged closer to the buffer unit 200 than the high pressure chamber 500. Can be done. On one side of the transfer chamber 300, the liquid treatment chamber 400 can be provided in an AXB (A, B are natural numbers greater than 1 or 1 respectively) arrangement along the first direction 92 and the third direction 96, respectively. Further, on one side of the transfer chamber 300, the high pressure chamber 500 can be provided with CXDs (C and D are natural numbers larger than 1 or 1, respectively) along the first direction 92 and the third direction 96, respectively. Unlike the above, only the liquid treatment chamber 400 can be provided on one side of the transfer chamber 300, and only the high pressure chamber 500 can be provided on the other side.

The transfer chamber 300 has a transfer robot 320. A guide rail 340 whose lateral direction is provided in the first direction 92 is provided in the transfer chamber 300, and the transfer robot 320 can be provided movably on the guide rail 340. The transfer robot 320 includes a hand 322 on which the substrate W is placed, which can be provided for forward and backward movement, rotation about the third direction 96, and movable along the third direction 96. A plurality of hands 322 are provided so as to be separated in the vertical direction, and the hands 322 can move forward and backward independently of each other.

The buffer unit 200 includes a plurality of buffers 220 on which the substrate W is placed. The buffer 220 can be arranged so as to be separated from each other along the third direction 96. The front face and rear face of the buffer unit 200 are opened. The front surface is a surface facing the index module 10, and the rear surface is a surface facing the transfer chamber 300. The index robot 120 can approach the buffer unit 200 through the front surface, and the transfer robot 320 can approach the buffer unit 200 through the back surface.

FIG. 2 is a drawing schematically showing an embodiment of the high pressure chamber 500 of FIG. According to one embodiment, the high pressure chamber 500 utilizes a supercritical fluid to remove the liquid on the substrate W. The high pressure chamber 500 includes a body 520, a substrate support unit (not shown), a fluid supply unit 560, and a shutoff plate (not shown).

The body 520 provides a processing space 502 in which the drying process is carried out. The body 520 has an upper body 522 and a lower body 524, and the upper body 522 and the lower body 524 are combined with each other to provide the processing space 502 described above. The upper body 522 is provided on top of the lower body 524. The position of the upper body 522 is fixed, and the lower body 524 can be raised and lowered by a driving member 590 such as a cylinder. When the lower body 524 is separated from the upper body 522, the processing space 502 is opened, and at this time, the substrate W is carried in or out. When the process proceeds, the lower body 524 is brought into close contact with the upper body 522, and the processing space 502 is sealed from the outside. The high pressure chamber 500 has a heater 530. According to one example, the heater 530 is located inside the wall of the body 520. The heater 530 heats the processing space 502 of the body 520 so that the fluid supplied into the internal space of the body 520 maintains a supercritical state.

On the other hand, although not shown in the drawing, a substrate support unit (not shown) for supporting the substrate W can be provided inside the processing space 502. The substrate support unit (not shown) supports the substrate W in the processing space 502 of the body 520. The board support unit (not shown) can be installed on the lower body 524 to support the board W. In this case, the substrate support unit (not shown) is in the form of lifting and supporting the substrate W. Alternatively, the substrate support unit (not shown) can be installed on the upper body 522 to support the substrate W. In this case, the substrate support unit (not shown) is in the form of suspending and supporting the substrate W.

The exhaust unit 550 includes an exhaust line 551. The exhaust line 551 can be coupled to the lower body 524. The supercritical fluid in the processing space 502 of the body 520 is exhausted to the outside of the body 520 through the exhaust line 550.

The fluid supply unit 560 supplies the process fluid to the processing space 502 of the body 520. According to one example, the process fluid can be supplied to the processing space 502 in a supercritical state. Unlike this, the process fluid can be supplied to the processing space 502 in a gas state and phase-changed to a supercritical state in the processing space 502. The process fluid is a drying fluid.

According to one example, the fluid supply unit 560 has an upper supply line 563 and a lower supply line 565. The upper supply line 563 and the lower supply line 563 supply the process fluid above the substrate W placed on the substrate support unit (not shown). According to one example, the upper supply line 563 is coupled to the upper body 522. In addition, the upper supply line 563 can be coupled to the center of the upper body 522.

The lower supply line 565 can be coupled to the lower body 524. A second supply valve 582 can be installed in the upper supply line 563, and a third supply valve 583 can be installed in the lower supply line 565.

When the lower supply line 565 is coupled to the lower body 524, a blocking plate (not shown) can be arranged in the processing space 502 of the body 520. The blocking plate (not shown) can be provided in a disc shape. The blocking plate (not shown) is supported by a support (not shown) so as to be separated from the bottom surface of the body 520 to the upper part. Supports (not shown) are provided in a load shape, and a plurality of supports are arranged so as to be separated from each other by a certain distance. The discharge port of the lower supply line 565 and the inflow port of the exhaust line 551 can be provided at positions where they do not interfere with each other. The blocking plate (not shown) can prevent the process fluid supplied through the lower branch line (not shown) from being directly discharged toward the substrate W and damaging the substrate W.

FIG. 3 is a schematic view of a substrate processing apparatus according to an embodiment of the present invention. The fluid supply unit 560 and the prevent unit (Pre-Vent unit) 570 will be described in detail with reference to FIG.

The fluid supply unit 560 includes a fluid supply source 610 and a supply line 561.

The fluid source 610 stores the process fluid provided in the high pressure chamber 500. For example, the fluid supply source 610 is a storage tank or a leisure bar tank. For example, the process fluid is carbon dioxide. The process fluid supplied by the fluid supply source 610 is provided to the high pressure chamber 500 in the supercritical phase.

The supply line 561 connects the high pressure chamber 500 and the fluid supply source 610. The supply line 561 supplies the process fluid stored in the fluid supply source 610 to the high pressure chamber 500. The supply line 561 is branched into an upper supply line 563 and a lower supply line 565 at one point. The upper supply line 563 is connected to the upper body 522 of the high pressure chamber 500, and the lower supply line 565 is connected to the lower body 524 of the high pressure chamber 500. The supply line 561 is provided with a first supply valve 581 before branching. The upper supply line 563 is provided with a second supply valve 582. The lower supply line 565 is provided with a third supply valve 583.

A filter 591 and a first line heater 592 can be provided upstream and downstream in front of the branch point at the first supply valve 581 of the supply line 561.

The upper supply line 563 may be provided with a second line heater 593 upstream of the second supply valve 582. The lower supply line 565 may be provided with a third line heater 594 upstream of the third supply valve 583.

The lower supply line 565 is connected to a prevent unit 570 that vents the process fluid remaining inside the supply line. The prevent unit 570 includes a first prevent line 571.

A first prevent line 571 is branched into the lower supply line 565. A first prevent valve 585 is provided on the first prevent line 571. The downstream of the first prevent valve 585 is vented. The first prevent line 571 is connected to the lower supply line 565 between the third line heater 594 and the third supply valve 583 provided in the lower supply line 565.

The prevent unit 570 further includes a second prevent line 572. One end of the second preventive line 572 is connected to the exhaust line 551, and the other end is connected to the first preventive line 571. A second prevent valve 586 is provided on the second prevent line 572. The exhaust line 551 is provided with an exhaust valve 584. When the exhaust valve 584 is opened, the process fluid inside the high pressure chamber 500 is discharged to the outside of the high pressure chamber 500. The second prevent line 572 is connected to the exhaust line 551 upstream of the exhaust valve 584. Further, the second preventive line 572 is connected to the first preventive line 571 downstream of the first preventive valve 585.

FIG. 4 is a drawing showing a portion where the first preventive line 571 and the second preventive line 572 are connected.

The diameter D1 of the portion 552a connected to the second prevent line 572 of the first prevent line 571 is provided smaller than the diameter D2 upstream of the portion connected to the second prevent line 572. Further, the diameter D3 of the second prevent line 572 is provided smaller than the diameter D1 of the portion 552a connected to the second prevent line 572 of the first prevent line 571.

FIG. 5 is a drawing showing an operating state according to an embodiment of the present invention before the substrate to be processed is carried into the chamber. Referring to FIG. 5, the first supply valve 521 and the first prevent valve 585 are opened before the substrate is carried into the high pressure chamber 500, and the second supply valve 582, the third supply valve 583 and the exhaust valve 584 are opened. And the second prevent valve 586 can be closed. The control of each valve can be controlled by a controller (not shown).

FIG. 6 is a drawing showing an operating state according to an embodiment of the present invention when the substrate is carried into the high pressure chamber and the high pressure chamber is closed. Referring to FIG. 6, the substrate is carried into the high pressure chamber 500, the high pressure chamber 500 is closed, and then the second prevent valve 586 is opened. At this time, the second supply valve 582, the third supply valve 583, and the exhaust valve 584 are subsequently closed. At this time, since the diameter D3 of the second preventive line 572 is smaller than that of the first preventive line 571 and smaller than the diameter D2 of the portion of the first preventive line 571 connected to the second preventive line, the venturi effect can be obtained. This allows the processing space 502 inside the high pressure chamber 500 to be opened to accommodate the substrate, thereby removing particles such as water vapor that have flowed in by increasing the degree of vacuum inside the high pressure chamber 500. Can be done.

7 and 8 are drawings showing an operating state of a substrate processing apparatus according to an embodiment of the present invention for processing a substrate.

Referring to FIG. 7, a process fluid is supplied to the high pressure chamber 500 to process the substrate W1 loaded inside the high pressure chamber 500. The first supply can proceed with only the third supply valve 583 of the lower supply line 565 and the first supply valve 521 of the supply line 591 open. The second supply valve 582, the first prevent valve 585, the second prevent valve 586, and the exhaust valve 584 can be closed. As a result, the internal pressure of the high pressure chamber 500 becomes higher than the set pressure.

When the internal pressure of the high pressure chamber 500 reaches the set pressure, the second supply valve 582 is opened as shown in FIG. 8, and the exhaust valve 584 is opened or closed as necessary. The processing on the substrate can be carried out by repeating the supply and exhaust of the process fluid within a constant pressure range.

FIG. 9 illustrates a method of processing a substrate according to one embodiment.

As for the substrate, the liquid treatment chamber 400 includes a support unit 410, a nozzle 420, and a cup 430.

The support unit 410 supports the substrate. The support unit 410 supports the substrate W and rotates the substrate W during the process progress. The cup 430 surrounds the support unit 410 and provides a processing space. The nozzle 420 supplies the processing liquid to the substrate.

The nozzle 420 can be connected to a nozzle support, a support shaft, and a drive. The nozzle 420 can be moved between the process position and the standby position. The process position is defined as the position where the nozzle 420 is arranged vertically above the cup 430, and the standby position is defined as the position where the nozzle 420 deviates from the vertical upper portion of the cup 430.

One or more nozzles 420 may be provided. When the nozzles 420 are provided in a plurality of nozzles, the chemical, rinse, and organic solvents can be provided as treatment liquids through different nozzles 420. The chemical is a liquid having the properties of a strong acid or a strong base. The rinse liquid is pure water. The organic solvent is a mixture of isopropyl alcohol vapor and an inert gas, or an isopropyl alcohol (IPA) solution. Isopropyl alcohol (IPA) is a leaning inhibitor that prevents leaning of substrate patterns in the process of being transported between chambers.

According to one embodiment, the treatment liquid supplied to the substrate W is isopropyl alcohol (IPA). In the liquid treatment chamber 400, isopropyl alcohol (IPA) is supplied to the pattern surface of the substrate W. The substrate W is conveyed to the high pressure chamber 500 with isopropyl alcohol (IPA) remaining on the pattern surface of the substrate. The transfer is performed by the transfer robot 320.

FIG. 10 is a drawing showing a processing step according to an embodiment of the present invention. Explaining the treatment step according to the embodiment of the present invention with reference to FIG. 10, the liquid treatment of the substrate is started in the liquid treatment chamber 400 (S101). After a predetermined time has elapsed from the start of the liquid treatment, the prevent venting by the preventive unit 570 of the high pressure chamber 400 is started (S102). At the stage S102, the preventant includes opening the first preventive valve 585 of the first preventive line 571 and opening the second preventive valve 586 of the second preventive line 572.

The prevent is terminated at the same time as the liquid treatment is completed (S103) or after a predetermined time has elapsed (S104). After that, the supercritical step is started (S105). According to one embodiment, the prevent at step S104 includes closing the first prevent valve 585 of the first prevent line 571 and closing the second prevent valve 586 of the second prevent line 572.

According to another embodiment, the prevent at step S102 only comprises opening the first prevent valve 585 of the first prevent line 571. When the liquid treatment is completed (S103), the substrate is carried into the high pressure chamber 500, and then the high pressure chamber 500 is closed, the second prevent valve 586 of the second prevent line 572 is further opened. If the degree of vacuum inside the processing space 502 is formed by the second prevent line 572 according to the opening of the second prevent valve 586 within a predetermined time, the second prevent valve 586 is closed and the supercritical process is started ( S105).

FIG. 11 is a drawing showing a processing step according to another embodiment of the present invention. Explaining the processing step according to the other embodiment of the present invention with reference to FIG. 11, when the supercritical step for the first substrate is completed (S201), the transfer robot 320 moves the first substrate into the high pressure chamber 500. Carry out from (S202). Then, the first supply valve 521 and the first prevent valve 585 are opened (S203). As a result, a predetermined amount of the process fluid remaining in the supply line 561 can be vented. Therefore, it is possible to improve the temperature difference of the process fluid between the first-loaded substrate and the second-loaded substrate. By opening the first prevent line 571, the temperature of the injected process fluid can be kept constant.

The transfer robot 320 carries the second substrate into the high-pressure chamber 500, closes the high-pressure chamber 500 (S204), and then opens the second prevent valve 586 (S205). Thereby, the degree of vacuum inside the high pressure chamber 500 can be increased. When the inside of the high pressure chamber 500 reaches a predetermined degree of vacuum, the first prevent valve 585 and the second prevent valve 586 are closed (S206). After that, the third supply valve 583 is opened to create a supercritical atmosphere inside the processing space 502 (S207), and the second supply valve 582 is opened to proceed with the supercritical process (S208). The exhaust valve 584 is opened or closed as needed (S209). The processing on the substrate can be carried out by repeating the supply and exhaust of the process fluid within a constant pressure range. When the supercritical step for the second substrate is completed (S210), the process for the third substrate can proceed while repeating the above-mentioned process.

The above detailed description is to illustrate the present invention. In addition, the above description is to explain a preferred embodiment of the present invention as an example, and the present invention can be used in various other unions, modifications, and environments. That is, it is possible to change or modify the scope of the concept of the invention disclosed in the present specification, the scope equivalent to the above-mentioned disclosure content, and / or the scope of technology or knowledge in the art. The above-described embodiment is to explain the best state for embodying the technical idea of the present invention, and various changes required in a specific application field and application of the present invention are possible. Therefore, the above detailed description of the invention is not intended to limit the invention to the disclosed embodiments. The scope of the attached claims must be analyzed as including other implementation states.

571 1st prevent line 585 1st prevent valve 572 2nd prevent line 586 2nd prevent valve

Claims (20)

In the equipment that processes the substrate
A high-pressure chamber that provides a processing space in which the process of processing the substrate using the process fluid is performed,
A fluid source that provides the process fluid to the high pressure chamber and
A fluid supply unit that supplies the process fluid to the processing space of the high-pressure chamber,
An exhaust unit that exhausts the process fluid in the high-pressure chamber,
A preventive unit for venting the process fluid remaining inside the supply line, and the like.
The fluid supply unit is
A supply line connecting the high pressure chamber and the fluid supply source,
The supply valve installed on the supply line and
Including the line heater provided to the supply line,
The exhaust unit is
The exhaust line connected to the high pressure chamber and
Including an exhaust valve installed in the exhaust line,
The prevent unit is
One end is connected to the supply line of the fluid supply unit, and the other end is vented with a first prevent line.
A substrate processing apparatus including a first prevent valve installed in the first prevent line. The prevent unit is
A second preventive line, one end of which is connected to the exhaust line and the other end of which is connected to the first preventive line.
The substrate processing apparatus according to claim 1, further comprising a second prevent valve installed in the second prevent line. The second prevent line is
The substrate processing apparatus according to claim 2, wherein the diameter is smaller than the diameter of the portion of the first prevent line connected to the second prevent line. The substrate processing apparatus according to claim 2, wherein the second prevent line is connected to the exhaust line upstream of the exhaust valve. The substrate processing apparatus according to claim 2, wherein the second preventive line is connected to the first preventive line downstream of the first preventive valve. The substrate processing apparatus according to claim 2, wherein the diameter of the portion of the first preventive line connected to the second preventive line is smaller than the diameter of the portion upstream of the portion connected to the second preventive line. Including more controls
After the substrate is carried into the high-pressure chamber and the high-pressure chamber is closed, the controller is used.
The substrate processing apparatus according to claim 2, wherein the supply valve, the first prevent valve, and the second prevent valve are opened. The substrate processing apparatus according to claim 1, wherein the first prevent line is connected to the upstream of the supply valve at the supply line. The supply line
An upper supply line connected to the upper part of the high pressure chamber and
Including a lower supply line connected to the lower part of the high pressure chamber.
The substrate processing apparatus according to claim 1, wherein the first prevent line is connected to the lower supply line. The supply valve
A first supply valve installed between the upper supply line and the branch point of the lower supply line at the fluid supply source,
The second supply valve installed on the upper supply line and
Including a third supply valve installed in the lower supply line,
The substrate processing apparatus according to claim 9, wherein the first preventive line is connected to the lower supply line upstream of the second supply valve. The substrate processing apparatus according to claim 1, wherein the prevent line is connected to the supply line downstream of the line heater. The prevent unit is
A second preventive line, one end of which is connected to the exhaust line and the other end of which is connected to the first preventive line.
Further including a second prevent valve installed in the second prevent line,
After the substrate is carried into the high pressure chamber and the high pressure chamber is closed,
The substrate processing apparatus according to claim 12, wherein the second prevent valve is further opened. In the equipment that processes the substrate
A liquid treatment chamber that supplies the treatment liquid to the substrate to process the substrate,
A supercritical chamber in which the process of processing a substrate using a process fluid in a supercritical state is carried out,
A transfer robot that transfers a substrate between the liquid treatment chamber and the supercritical chamber,
Including the controller,
The liquid treatment chamber
A support unit that supports the board and
A nozzle that supplies the processing liquid on the substrate and
Includes a cup that surrounds the support unit and provides processing space.
The supercritical chamber
A high-pressure chamber that provides a processing space in which the process of processing the substrate using the process fluid is performed,
A fluid source that provides the process fluid to the high pressure chamber and
A supply line connecting the high pressure chamber and the fluid supply source,
The supply valve installed on the supply line and
The line heater provided to the supply line and
An exhaust line that exhausts the process fluid in the high-pressure chamber,
A preventive unit for venting the process fluid remaining inside the supply line, and the like.
The prevent unit is
A first prevent line in which one end is connected to the supply line and the other end is vented.
A substrate processing apparatus including a first prevent valve installed in the first prevent line. The controller
The substrate processing apparatus according to claim 13, wherein the first prevent valve is opened to start preventing the supply line of the supercritical chamber when the substrate treatment is carried out by the liquid treatment chamber. The controller
Before the substrate liquid-treated in the liquid treatment chamber is carried into the high-pressure chamber,
The substrate processing apparatus according to claim 13, wherein the supply valve and the first prevent valve of the supercritical chamber are opened. The prevent unit is
A second preventive line, one end of which is connected to the exhaust line and the other end of which is connected to the first preventive line.
Further including a second prevent valve installed in the second prevent line,
The controller
After the substrate is carried into the high pressure chamber and the high pressure chamber is closed,
The substrate processing apparatus according to claim 15, further opening the second prevent valve. The second prevent line is
The substrate processing apparatus according to claim 16, wherein the diameter is smaller than that of the first prevent line. The substrate processing apparatus according to claim 16, wherein the diameter of the portion of the first preventive line connected to the second preventive line is smaller than the diameter of the portion upstream of the portion connected to the second preventive line. In the substrate processing method using the substrate processing apparatus of claim 1,
Before the substrate is carried into the high pressure chamber
A substrate processing method for opening the supply valve and the first prevent valve. The prevent unit is
A second preventive line, one end of which is connected to the exhaust line and the other end of which is connected to the first preventive line.
Further including a second prevent valve installed in the second prevent line,
After the substrate is carried into the high pressure chamber and the high pressure chamber is closed,
The substrate processing method according to claim 19, wherein the second prevent valve is further opened.

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