JP2021034487A - 基板を処理する方法、デバイス製造方法、及びプラズマ処理装置 - Google Patents

基板を処理する方法、デバイス製造方法、及びプラズマ処理装置 Download PDF

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JP2021034487A
JP2021034487A JP2019151441A JP2019151441A JP2021034487A JP 2021034487 A JP2021034487 A JP 2021034487A JP 2019151441 A JP2019151441 A JP 2019151441A JP 2019151441 A JP2019151441 A JP 2019151441A JP 2021034487 A JP2021034487 A JP 2021034487A
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Japan
Prior art keywords
plasma
substrate
chamber
upper electrode
gas
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Pending
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JP2019151441A
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English (en)
Japanese (ja)
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JP2021034487A5 (cg-RX-API-DMAC10.html
Inventor
裕介 青木
Yusuke Aoki
裕介 青木
敏勝 戸花
Toshikatsu Tobana
敏勝 戸花
信也 森北
Shinya Morikita
信也 森北
諭 中村
Satoshi Nakamura
諭 中村
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to JP2019151441A priority Critical patent/JP2021034487A/ja
Priority to CN202010794270.XA priority patent/CN112420507B/zh
Priority to TW109127026A priority patent/TW202113968A/zh
Priority to US16/989,810 priority patent/US11081351B2/en
Priority to KR1020200100009A priority patent/KR20210023699A/ko
Publication of JP2021034487A publication Critical patent/JP2021034487A/ja
Publication of JP2021034487A5 publication Critical patent/JP2021034487A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32577—Electrical connecting means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32146—Amplitude modulation, includes pulsing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/69—Etching of wafers, substrates or parts of devices using masks for semiconductor materials
    • H10P50/691—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group IV materials or Group III-V materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/73—Etching of wafers, substrates or parts of devices using masks for insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/405—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their composition, e.g. multilayer masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/408—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes
    • H10P76/4085—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes characterised by the processes involved to create the masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
JP2019151441A 2019-08-21 2019-08-21 基板を処理する方法、デバイス製造方法、及びプラズマ処理装置 Pending JP2021034487A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2019151441A JP2021034487A (ja) 2019-08-21 2019-08-21 基板を処理する方法、デバイス製造方法、及びプラズマ処理装置
CN202010794270.XA CN112420507B (zh) 2019-08-21 2020-08-10 处理基板的方法、器件制造方法及等离子体处理装置
TW109127026A TW202113968A (zh) 2019-08-21 2020-08-10 處理基板之方法、元件製造方法及電漿處理裝置
US16/989,810 US11081351B2 (en) 2019-08-21 2020-08-10 Method of processing substrate, device manufacturing method, and plasma processing apparatus
KR1020200100009A KR20210023699A (ko) 2019-08-21 2020-08-10 기판을 처리하는 방법, 디바이스 제조 방법, 및 플라즈마 처리 장치

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2019151441A JP2021034487A (ja) 2019-08-21 2019-08-21 基板を処理する方法、デバイス製造方法、及びプラズマ処理装置

Publications (2)

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JP2021034487A true JP2021034487A (ja) 2021-03-01
JP2021034487A5 JP2021034487A5 (cg-RX-API-DMAC10.html) 2022-06-02

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US (1) US11081351B2 (cg-RX-API-DMAC10.html)
JP (1) JP2021034487A (cg-RX-API-DMAC10.html)
KR (1) KR20210023699A (cg-RX-API-DMAC10.html)
CN (1) CN112420507B (cg-RX-API-DMAC10.html)
TW (1) TW202113968A (cg-RX-API-DMAC10.html)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7569752B2 (ja) * 2021-06-07 2024-10-18 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006270019A (ja) * 2004-06-21 2006-10-05 Tokyo Electron Ltd プラズマ処理装置およびプラズマ処理方法、ならびにコンピュータ読み取り可能な記憶媒体
JP2017098455A (ja) * 2015-11-26 2017-06-01 東京エレクトロン株式会社 エッチング方法
JP2017212331A (ja) * 2016-05-25 2017-11-30 東京エレクトロン株式会社 被処理体を処理する方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7368392B2 (en) * 2003-07-10 2008-05-06 Applied Materials, Inc. Method of fabricating a gate structure of a field effect transistor having a metal-containing gate electrode
JP5977509B2 (ja) * 2011-12-09 2016-08-24 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
JP2014082228A (ja) * 2012-10-12 2014-05-08 Tokyo Electron Ltd プラズマエッチング方法
JP6035117B2 (ja) 2012-11-09 2016-11-30 東京エレクトロン株式会社 プラズマエッチング方法及びプラズマエッチング装置
US8940602B2 (en) * 2013-04-11 2015-01-27 International Business Machines Corporation Self-aligned structure for bulk FinFET
JP6603654B2 (ja) * 2013-05-03 2019-11-06 アプライド マテリアルズ インコーポレイテッド フィルムスタック上にハードマスクを形成するための方法
JP7045152B2 (ja) * 2017-08-18 2022-03-31 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006270019A (ja) * 2004-06-21 2006-10-05 Tokyo Electron Ltd プラズマ処理装置およびプラズマ処理方法、ならびにコンピュータ読み取り可能な記憶媒体
JP2017098455A (ja) * 2015-11-26 2017-06-01 東京エレクトロン株式会社 エッチング方法
JP2017212331A (ja) * 2016-05-25 2017-11-30 東京エレクトロン株式会社 被処理体を処理する方法

Also Published As

Publication number Publication date
CN112420507A (zh) 2021-02-26
CN112420507B (zh) 2025-09-12
US20210057212A1 (en) 2021-02-25
TW202113968A (zh) 2021-04-01
KR20210023699A (ko) 2021-03-04
US11081351B2 (en) 2021-08-03

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