JP2021005655A - 光電変換装置および機器 - Google Patents

光電変換装置および機器 Download PDF

Info

Publication number
JP2021005655A
JP2021005655A JP2019119131A JP2019119131A JP2021005655A JP 2021005655 A JP2021005655 A JP 2021005655A JP 2019119131 A JP2019119131 A JP 2019119131A JP 2019119131 A JP2019119131 A JP 2019119131A JP 2021005655 A JP2021005655 A JP 2021005655A
Authority
JP
Japan
Prior art keywords
photoelectric conversion
region
conversion device
pixel
pixels
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2019119131A
Other languages
English (en)
Japanese (ja)
Other versions
JP2021005655A5 (https=
Inventor
紘司 原
Koji Hara
紘司 原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2019119131A priority Critical patent/JP2021005655A/ja
Priority to US16/905,611 priority patent/US11587969B2/en
Publication of JP2021005655A publication Critical patent/JP2021005655A/ja
Publication of JP2021005655A5 publication Critical patent/JP2021005655A5/ja
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H10F39/8023—Disposition of the elements in pixels, e.g. smaller elements in the centre of the imager compared to larger elements at the periphery
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8033—Photosensitive area
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8053—Colour filters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/807—Pixel isolation structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Element Separation (AREA)
JP2019119131A 2019-06-26 2019-06-26 光電変換装置および機器 Pending JP2021005655A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2019119131A JP2021005655A (ja) 2019-06-26 2019-06-26 光電変換装置および機器
US16/905,611 US11587969B2 (en) 2019-06-26 2020-06-18 Photoelectric conversion apparatus and equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2019119131A JP2021005655A (ja) 2019-06-26 2019-06-26 光電変換装置および機器

Publications (2)

Publication Number Publication Date
JP2021005655A true JP2021005655A (ja) 2021-01-14
JP2021005655A5 JP2021005655A5 (https=) 2022-06-29

Family

ID=74043838

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2019119131A Pending JP2021005655A (ja) 2019-06-26 2019-06-26 光電変換装置および機器

Country Status (2)

Country Link
US (1) US11587969B2 (https=)
JP (1) JP2021005655A (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2025225733A1 (ja) * 2024-04-26 2025-10-30 ソニーセミコンダクタソリューションズ株式会社 光検出装置及び電子機器

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20220019895A (ko) * 2020-08-10 2022-02-18 삼성전자주식회사 이미지 센서

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002289698A (ja) * 2001-03-28 2002-10-04 Sharp Corp 半導体装置及びその製造方法と携帯電子機器
JP2006186261A (ja) * 2004-12-28 2006-07-13 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法
JP2010206178A (ja) * 2009-02-06 2010-09-16 Canon Inc 光電変換装置、及び光電変換装置の製造方法
JP2012169530A (ja) * 2011-02-16 2012-09-06 Sony Corp 固体撮像装置、および、その製造方法、電子機器
JP2014116472A (ja) * 2012-12-10 2014-06-26 Canon Inc 固体撮像装置およびその製造方法
JP2015103606A (ja) * 2013-11-22 2015-06-04 キヤノン株式会社 光電変換装置の製造方法および光電変換装置
JP2015228467A (ja) * 2014-06-02 2015-12-17 キヤノン株式会社 光電変換装置および撮像システム
US20170047363A1 (en) * 2015-08-11 2017-02-16 Samsung Electronics Co., Ltd. Auto-focus image sensor
JP2017045873A (ja) * 2015-08-27 2017-03-02 ルネサスエレクトロニクス株式会社 半導体装置の製造方法および半導体装置

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008153566A (ja) 2006-12-20 2008-07-03 Matsushita Electric Ind Co Ltd 固体撮像装置及びその製造方法
TWI467751B (zh) * 2011-12-12 2015-01-01 Sony Corp A solid-state imaging device, a driving method of a solid-state imaging device, and an electronic device
US8860101B2 (en) * 2012-02-14 2014-10-14 Taiwan Semiconductor Manufacturing Company, Ltd. Image sensor cross-talk reduction system
KR102212138B1 (ko) * 2014-08-19 2021-02-04 삼성전자주식회사 이미지 센서의 단위 픽셀과 이를 포함하는 픽셀 어레이
KR102363433B1 (ko) * 2015-01-15 2022-02-16 삼성전자주식회사 이미지 센서
ITUB20169957A1 (it) * 2016-01-13 2017-07-13 Lfoundry Srl Metodo per fabbricare sensori nir cmos perfezionati
JP6201095B1 (ja) 2016-04-27 2017-09-20 雫石　誠 撮像モジュール及び撮像装置
JP6244513B1 (ja) 2016-06-07 2017-12-06 誠 雫石 光電変換素子とその製造方法、分光分析装置
KR102661391B1 (ko) * 2016-10-12 2024-04-26 삼성전자주식회사 이미지 센서
JP6368894B1 (ja) 2017-07-04 2018-08-01 誠 雫石 光電変換素子及び光学測定装置

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002289698A (ja) * 2001-03-28 2002-10-04 Sharp Corp 半導体装置及びその製造方法と携帯電子機器
JP2006186261A (ja) * 2004-12-28 2006-07-13 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法
JP2010206178A (ja) * 2009-02-06 2010-09-16 Canon Inc 光電変換装置、及び光電変換装置の製造方法
JP2012169530A (ja) * 2011-02-16 2012-09-06 Sony Corp 固体撮像装置、および、その製造方法、電子機器
JP2014116472A (ja) * 2012-12-10 2014-06-26 Canon Inc 固体撮像装置およびその製造方法
JP2015103606A (ja) * 2013-11-22 2015-06-04 キヤノン株式会社 光電変換装置の製造方法および光電変換装置
JP2015228467A (ja) * 2014-06-02 2015-12-17 キヤノン株式会社 光電変換装置および撮像システム
US20170047363A1 (en) * 2015-08-11 2017-02-16 Samsung Electronics Co., Ltd. Auto-focus image sensor
JP2017045873A (ja) * 2015-08-27 2017-03-02 ルネサスエレクトロニクス株式会社 半導体装置の製造方法および半導体装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2025225733A1 (ja) * 2024-04-26 2025-10-30 ソニーセミコンダクタソリューションズ株式会社 光検出装置及び電子機器

Also Published As

Publication number Publication date
US11587969B2 (en) 2023-02-21
US20200411584A1 (en) 2020-12-31

Similar Documents

Publication Publication Date Title
US12310130B2 (en) Solid-state imaging device and method for manufacturing solid-state imaging device, and electronic device
US11721715B2 (en) Image pickup device, method of manufacturing image pickup device, and electronic apparatus
US7859027B2 (en) Back irradiating type solid state imaging device
KR102349538B1 (ko) 고체 촬상 소자 및 전자 기기
JP5564909B2 (ja) 固体撮像装置とその製造方法、及び電子機器
US10438989B2 (en) Stack-type image sensor
US9024361B2 (en) Solid-state imaging device and method of manufacturing solid-state imaging device
CN103688359B (zh) 固态成像装置及其驱动方法、固态成像装置的制造方法以及电子信息设备
JP2015220339A (ja) 固体撮像装置
US11587969B2 (en) Photoelectric conversion apparatus and equipment
WO2021193084A1 (ja) 固体撮像装置、及び、固体撮像装置の製造方法
US20110049331A1 (en) Solid-state imaging device and method of manufacturing the same
JP2011258598A (ja) 固体撮像素子及びその製造方法、並びに撮像機器
TWI424559B (zh) 固態成像裝置、電子設備及固態成像裝置之製造方法
JP2025175768A (ja) 光電変換装置、機器および光電変換装置の製造方法
US20120080731A1 (en) Photodetector isolation in image sensors
JP2014160740A (ja) 固体撮像素子、撮像装置、および電子装置
KR20090056458A (ko) 씨모스 이미지 센서 및 이를 구비한 전자 기기

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20220621

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20220621

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20230531

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20230606

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20230802

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20231114

RD01 Notification of change of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7421

Effective date: 20231213