JP2020535459A - 反スティクション用途のための熱除去可能充填材料 - Google Patents
反スティクション用途のための熱除去可能充填材料 Download PDFInfo
- Publication number
- JP2020535459A JP2020535459A JP2020515176A JP2020515176A JP2020535459A JP 2020535459 A JP2020535459 A JP 2020535459A JP 2020515176 A JP2020515176 A JP 2020515176A JP 2020515176 A JP2020515176 A JP 2020515176A JP 2020535459 A JP2020535459 A JP 2020535459A
- Authority
- JP
- Japan
- Prior art keywords
- carbonate
- space
- filling material
- solution
- solvent
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000463 material Substances 0.000 title claims abstract description 54
- 238000011049 filling Methods 0.000 title claims abstract description 46
- 238000000034 method Methods 0.000 claims abstract description 59
- 239000000758 substrate Substances 0.000 claims abstract description 48
- 239000002904 solvent Substances 0.000 claims abstract description 36
- 238000004140 cleaning Methods 0.000 claims abstract description 22
- 238000006467 substitution reaction Methods 0.000 claims abstract description 22
- 150000001720 carbohydrates Chemical class 0.000 claims abstract description 20
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 19
- 239000004065 semiconductor Substances 0.000 claims abstract description 19
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 19
- 239000010703 silicon Substances 0.000 claims abstract description 19
- 239000007787 solid Substances 0.000 claims abstract description 19
- 229920000098 polyolefin Polymers 0.000 claims abstract description 18
- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 claims abstract description 17
- 238000012856 packing Methods 0.000 claims abstract description 10
- 238000004528 spin coating Methods 0.000 claims abstract description 5
- 229920000642 polymer Polymers 0.000 claims description 33
- -1 polypropylene carbonate Polymers 0.000 claims description 19
- 238000005979 thermal decomposition reaction Methods 0.000 claims description 19
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 14
- 229920000379 polypropylene carbonate Polymers 0.000 claims description 12
- CZMRCDWAGMRECN-UGDNZRGBSA-N Sucrose Chemical compound O[C@H]1[C@H](O)[C@@H](CO)O[C@@]1(CO)O[C@@H]1[C@H](O)[C@@H](O)[C@H](O)[C@@H](CO)O1 CZMRCDWAGMRECN-UGDNZRGBSA-N 0.000 claims description 10
- 229930006000 Sucrose Natural products 0.000 claims description 10
- 239000005720 sucrose Substances 0.000 claims description 10
- 239000003054 catalyst Substances 0.000 claims description 8
- JYCVYMWJCDMQBZ-UHFFFAOYSA-N bicyclo[2.2.1]hept-2-ene carbonic acid Chemical compound OC(O)=O.C1C2CCC1C=C2 JYCVYMWJCDMQBZ-UHFFFAOYSA-N 0.000 claims description 5
- 238000009835 boiling Methods 0.000 claims description 5
- XTUSLLYSMVWGPS-UHFFFAOYSA-N carbonic acid;cyclohexene Chemical compound OC(O)=O.C1CCC=CC1 XTUSLLYSMVWGPS-UHFFFAOYSA-N 0.000 claims description 5
- 150000002016 disaccharides Chemical class 0.000 claims description 5
- 150000002772 monosaccharides Chemical class 0.000 claims description 5
- 229920000636 poly(norbornene) polymer Polymers 0.000 claims description 5
- 239000012080 ambient air Substances 0.000 claims description 4
- 239000011261 inert gas Substances 0.000 claims description 4
- 238000005406 washing Methods 0.000 claims description 4
- AXTPQUTYMIJBBB-UHFFFAOYSA-N cyclohexene;4-methyl-1,3-dioxolan-2-one Chemical compound C1CCC=CC1.CC1COC(=O)O1 AXTPQUTYMIJBBB-UHFFFAOYSA-N 0.000 claims description 3
- 238000000197 pyrolysis Methods 0.000 claims description 2
- 238000010438 heat treatment Methods 0.000 abstract description 11
- 238000005530 etching Methods 0.000 abstract description 8
- 230000015556 catabolic process Effects 0.000 abstract description 6
- 238000006731 degradation reaction Methods 0.000 abstract description 6
- 238000004380 ashing Methods 0.000 abstract description 5
- 238000010586 diagram Methods 0.000 abstract 1
- 239000000243 solution Substances 0.000 description 79
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 21
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 14
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 12
- 239000000203 mixture Substances 0.000 description 12
- 235000012431 wafers Nutrition 0.000 description 12
- 238000009472 formulation Methods 0.000 description 10
- 238000000206 photolithography Methods 0.000 description 9
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 7
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 6
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 6
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 6
- 150000004649 carbonic acid derivatives Chemical class 0.000 description 5
- 229920002120 photoresistant polymer Polymers 0.000 description 5
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 4
- 238000010936 aqueous wash Methods 0.000 description 4
- 238000013461 design Methods 0.000 description 4
- LZCLXQDLBQLTDK-UHFFFAOYSA-N ethyl 2-hydroxypropanoate Chemical compound CCOC(=O)C(C)O LZCLXQDLBQLTDK-UHFFFAOYSA-N 0.000 description 4
- 235000000346 sugar Nutrition 0.000 description 4
- VDZOOKBUILJEDG-UHFFFAOYSA-M tetrabutylammonium hydroxide Chemical compound [OH-].CCCC[N+](CCCC)(CCCC)CCCC VDZOOKBUILJEDG-UHFFFAOYSA-M 0.000 description 4
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 4
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 3
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 3
- 238000000354 decomposition reaction Methods 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 150000008163 sugars Chemical class 0.000 description 3
- MRYQZMHVZZSQRT-UHFFFAOYSA-M tetramethylazanium;acetate Chemical compound CC([O-])=O.C[N+](C)(C)C MRYQZMHVZZSQRT-UHFFFAOYSA-M 0.000 description 3
- KUCWUAFNGCMZDB-UHFFFAOYSA-N 2-amino-3-nitrophenol Chemical compound NC1=C(O)C=CC=C1[N+]([O-])=O KUCWUAFNGCMZDB-UHFFFAOYSA-N 0.000 description 2
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 2
- QILADFQOVQJGBU-UHFFFAOYSA-N C1=CCCCC1.C=CC Chemical group C1=CCCCC1.C=CC QILADFQOVQJGBU-UHFFFAOYSA-N 0.000 description 2
- RDOXTESZEPMUJZ-UHFFFAOYSA-N anisole Chemical compound COC1=CC=CC=C1 RDOXTESZEPMUJZ-UHFFFAOYSA-N 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- DKPFZGUDAPQIHT-UHFFFAOYSA-N butyl acetate Chemical compound CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 description 2
- 230000015271 coagulation Effects 0.000 description 2
- 238000005345 coagulation Methods 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229940116333 ethyl lactate Drugs 0.000 description 2
- 238000011010 flushing procedure Methods 0.000 description 2
- 229930195733 hydrocarbon Natural products 0.000 description 2
- 150000002430 hydrocarbons Chemical class 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 229920002401 polyacrylamide Polymers 0.000 description 2
- 229920006254 polymer film Polymers 0.000 description 2
- 229920002451 polyvinyl alcohol Polymers 0.000 description 2
- 235000019422 polyvinyl alcohol Nutrition 0.000 description 2
- RUOJZAUFBMNUDX-UHFFFAOYSA-N propylene carbonate Chemical compound CC1COC(=O)O1 RUOJZAUFBMNUDX-UHFFFAOYSA-N 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000002411 thermogravimetry Methods 0.000 description 2
- 238000011282 treatment Methods 0.000 description 2
- IBLKWZIFZMJLFL-UHFFFAOYSA-N 1-phenoxypropan-2-ol Chemical compound CC(O)COC1=CC=CC=C1 IBLKWZIFZMJLFL-UHFFFAOYSA-N 0.000 description 1
- VXQBJTKSVGFQOL-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethyl acetate Chemical compound CCCCOCCOCCOC(C)=O VXQBJTKSVGFQOL-UHFFFAOYSA-N 0.000 description 1
- FPZWZCWUIYYYBU-UHFFFAOYSA-N 2-(2-ethoxyethoxy)ethyl acetate Chemical compound CCOCCOCCOC(C)=O FPZWZCWUIYYYBU-UHFFFAOYSA-N 0.000 description 1
- JTXMVXSTHSMVQF-UHFFFAOYSA-N 2-acetyloxyethyl acetate Chemical compound CC(=O)OCCOC(C)=O JTXMVXSTHSMVQF-UHFFFAOYSA-N 0.000 description 1
- QLKGUVGAXDXFFW-UHFFFAOYSA-M 2-hydroxyethyl(trimethyl)azanium;acetate Chemical compound CC([O-])=O.C[N+](C)(C)CCO QLKGUVGAXDXFFW-UHFFFAOYSA-M 0.000 description 1
- KQKBQJPEUWKVTG-UHFFFAOYSA-M 2-hydroxyethyl(trimethyl)azanium;benzoate Chemical compound C[N+](C)(C)CCO.[O-]C(=O)C1=CC=CC=C1 KQKBQJPEUWKVTG-UHFFFAOYSA-M 0.000 description 1
- RANBUTDEKVWLAB-UHFFFAOYSA-M 2-hydroxyethyl(trimethyl)azanium;formate Chemical compound [O-]C=O.C[N+](C)(C)CCO RANBUTDEKVWLAB-UHFFFAOYSA-M 0.000 description 1
- KIZQNNOULOCVDM-UHFFFAOYSA-M 2-hydroxyethyl(trimethyl)azanium;hydroxide Chemical compound [OH-].C[N+](C)(C)CCO KIZQNNOULOCVDM-UHFFFAOYSA-M 0.000 description 1
- LDWOOZOWGNCQRI-UHFFFAOYSA-N 2-hydroxyethyl(trimethyl)azanium;nitrate Chemical compound [O-][N+]([O-])=O.C[N+](C)(C)CCO LDWOOZOWGNCQRI-UHFFFAOYSA-N 0.000 description 1
- YEJRWHAVMIAJKC-UHFFFAOYSA-N 4-Butyrolactone Chemical compound O=C1CCCO1 YEJRWHAVMIAJKC-UHFFFAOYSA-N 0.000 description 1
- CYJRNFFLTBEQSQ-UHFFFAOYSA-N 8-(3-methyl-1-benzothiophen-5-yl)-N-(4-methylsulfonylpyridin-3-yl)quinoxalin-6-amine Chemical compound CS(=O)(=O)C1=C(C=NC=C1)NC=1C=C2N=CC=NC2=C(C=1)C=1C=CC2=C(C(=CS2)C)C=1 CYJRNFFLTBEQSQ-UHFFFAOYSA-N 0.000 description 1
- GUBGYTABKSRVRQ-XLOQQCSPSA-N Alpha-Lactose Chemical compound O[C@@H]1[C@@H](O)[C@@H](O)[C@@H](CO)O[C@H]1O[C@@H]1[C@@H](CO)O[C@H](O)[C@H](O)[C@H]1O GUBGYTABKSRVRQ-XLOQQCSPSA-N 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 1
- USFZMSVCRYTOJT-UHFFFAOYSA-N Ammonium acetate Chemical compound N.CC(O)=O USFZMSVCRYTOJT-UHFFFAOYSA-N 0.000 description 1
- 239000005695 Ammonium acetate Substances 0.000 description 1
- 229930091371 Fructose Natural products 0.000 description 1
- 239000005715 Fructose Substances 0.000 description 1
- RFSUNEUAIZKAJO-ARQDHWQXSA-N Fructose Chemical compound OC[C@H]1O[C@](O)(CO)[C@@H](O)[C@@H]1O RFSUNEUAIZKAJO-ARQDHWQXSA-N 0.000 description 1
- WQZGKKKJIJFFOK-GASJEMHNSA-N Glucose Natural products OC[C@H]1OC(O)[C@H](O)[C@@H](O)[C@@H]1O WQZGKKKJIJFFOK-GASJEMHNSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- JVTAAEKCZFNVCJ-UHFFFAOYSA-M Lactate Chemical compound CC(O)C([O-])=O JVTAAEKCZFNVCJ-UHFFFAOYSA-M 0.000 description 1
- GUBGYTABKSRVRQ-QKKXKWKRSA-N Lactose Natural products OC[C@H]1O[C@@H](O[C@H]2[C@H](O)[C@@H](O)C(O)O[C@@H]2CO)[C@H](O)[C@@H](O)[C@H]1O GUBGYTABKSRVRQ-QKKXKWKRSA-N 0.000 description 1
- 208000002193 Pain Diseases 0.000 description 1
- DWDIARWKMZUTTP-UHFFFAOYSA-N acetic acid;2-(trimethylazaniumyl)acetate Chemical compound CC(O)=O.C[N+](C)(C)CC([O-])=O DWDIARWKMZUTTP-UHFFFAOYSA-N 0.000 description 1
- KVXNKFYSHAUJIA-UHFFFAOYSA-N acetic acid;ethoxyethane Chemical compound CC(O)=O.CCOCC KVXNKFYSHAUJIA-UHFFFAOYSA-N 0.000 description 1
- TUVYSBJZBYRDHP-UHFFFAOYSA-N acetic acid;methoxymethane Chemical compound COC.CC(O)=O TUVYSBJZBYRDHP-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 150000003973 alkyl amines Chemical class 0.000 description 1
- WQZGKKKJIJFFOK-PHYPRBDBSA-N alpha-D-galactose Chemical compound OC[C@H]1O[C@H](O)[C@H](O)[C@@H](O)[C@H]1O WQZGKKKJIJFFOK-PHYPRBDBSA-N 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 229940043376 ammonium acetate Drugs 0.000 description 1
- 235000019257 ammonium acetate Nutrition 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- WQZGKKKJIJFFOK-VFUOTHLCSA-N beta-D-glucose Chemical compound OC[C@H]1O[C@@H](O)[C@H](O)[C@@H](O)[C@@H]1O WQZGKKKJIJFFOK-VFUOTHLCSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- HOPSCVCBEOCPJZ-UHFFFAOYSA-N carboxymethyl(trimethyl)azanium;chloride Chemical compound [Cl-].C[N+](C)(C)CC(O)=O HOPSCVCBEOCPJZ-UHFFFAOYSA-N 0.000 description 1
- KVTHWAMPSRKSHI-UHFFFAOYSA-N carboxymethyl(trimethyl)azanium;formate Chemical compound [O-]C=O.C[N+](C)(C)CC(O)=O KVTHWAMPSRKSHI-UHFFFAOYSA-N 0.000 description 1
- RLGQACBPNDBWTB-UHFFFAOYSA-N cetyltrimethylammonium ion Chemical compound CCCCCCCCCCCCCCCC[N+](C)(C)C RLGQACBPNDBWTB-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- SGMZJAMFUVOLNK-UHFFFAOYSA-M choline chloride Chemical compound [Cl-].C[N+](C)(C)CCO SGMZJAMFUVOLNK-UHFFFAOYSA-M 0.000 description 1
- 239000008199 coating composition Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 229930182830 galactose Natural products 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000008103 glucose Substances 0.000 description 1
- NJZRLXNBGZBREL-UHFFFAOYSA-N glycine betaine hydrate Chemical compound [OH-].C[N+](C)(C)CC(O)=O NJZRLXNBGZBREL-UHFFFAOYSA-N 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 150000002460 imidazoles Chemical class 0.000 description 1
- 239000008101 lactose Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- UZKWTJUDCOPSNM-UHFFFAOYSA-N methoxybenzene Substances CCCCOC=C UZKWTJUDCOPSNM-UHFFFAOYSA-N 0.000 description 1
- 230000000116 mitigating effect Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 150000002978 peroxides Chemical class 0.000 description 1
- 229920001281 polyalkylene Polymers 0.000 description 1
- 239000010695 polyglycol Substances 0.000 description 1
- 229920000151 polyglycol Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 239000013557 residual solvent Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
- 239000012453 solvate Substances 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- JKUYRAMKJLMYLO-UHFFFAOYSA-N tert-butyl 3-oxobutanoate Chemical compound CC(=O)CC(=O)OC(C)(C)C JKUYRAMKJLMYLO-UHFFFAOYSA-N 0.000 description 1
- WWIYWFVQZQOECA-UHFFFAOYSA-M tetramethylazanium;formate Chemical compound [O-]C=O.C[N+](C)(C)C WWIYWFVQZQOECA-UHFFFAOYSA-M 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
- B08B7/0064—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by temperature changes
- B08B7/0071—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by temperature changes by heating
- B08B7/0085—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by temperature changes by heating by pyrolysis
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
- B08B7/04—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by a combination of operations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02527—Carbon, e.g. diamond-like carbon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
- H01L21/76816—Aspects relating to the layout of the pattern or to the size of vias or trenches
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76822—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc.
- H01L21/76828—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc. thermal treatment
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B2220/00—Type of materials or objects being removed
- B08B2220/04—Polymers
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Preventing Corrosion Or Incrustation Of Metals (AREA)
- Treatments Of Macromolecular Shaped Articles (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
本出願は、「THERMALLY REMOVABLE FILL MATERIALS FOR ANTI−STICTION APPLICATIONS」と題された、2017年9月21日に出願された米国特許仮出願第61/561,481号の米国特許法第119条(e)の下での利益を主張するものであり、これらの開示は、その全体が参照により本明細書に組み込まれる。
本開示は、フォトリソグラフィ技術による電子部品の製造、及びエッチング残留物を除去するために使用される種類の水性洗浄溶液の除去時に、半導体基板のパターン化された高アスペクト比特徴部間で発生し得る、崩壊若しくはスティクションの緩和又は防止に関する。
純粋な又はドープされたシリコンウェハなどの半導体基板上に構築されたメモリセル及び他の構成要素などの電子部品の製造中に、フォトリソグラフィ技術を使用して基板を処理する。例えば、フォトレジストは、平坦なシリコンウェハ上に堆積され、続いて、例えば、UV露光を使用してフォトレジストをパターン化し得る。次いで、フォトレジストは、基板上に形成された狭い又は高いアスペクト比特徴部の間に形成されたトレンチの位置に対応するフォトレジストの部分を除去するのを容易にするように現像される。
本開示の置換溶液配合物は、好適な溶媒に溶解することによって、以下の表1に列挙される各ポリマーの市販の固体樹脂から調製した。結果として得られた配合物は、表に示すように固形分%を含有していた。次いで、溶液を、4インチのシリコンウェハ上でスピンコーティングし、それぞれ80℃及び160℃の接触ホットプレート上で60秒間焼成した。フィルム厚さ及び屈折率データは、以下の表1に示すとおりである。
本開示のスクロースに基づく置換溶液配合物は、水とイソプロピルアルコール(IPA)との混合物にスクロースを溶解することによって、以下の表2に記載の市販のスクロースから調製した。結果として得られた配合物は、表2に示すように10固形分%を含有していた。次いで、溶液を、4インチのシリコンウェハ上でスピンコーティングし、それぞれ80℃及び150℃の接触ホットプレート上で60秒間焼成した。フィルム厚さ及び屈折率データは、以下の表2に示すとおりである。
既知の比較ポリマーのコーティング配合物は、水に溶解させることによって、以下に表3に列挙される市販のポリビニルアルコール(PVA)及びポリアクリルアミド(PAAM)から調製した。結果として得られた配合物は、表3に示すように5〜7固形分%を含有していた。次いで、溶液を、4インチのシリコンウェハ上でスピンコーティングし、それぞれ80℃及び150℃の接触ホットプレート上で60秒間焼成した。フィルム厚さ及び屈折率データは、以下の表3に示すとおりである。
ポリアルケンカーボネート及び糖類に基づく上記の実施例1及び2の置換溶液は、それぞれ、実施例1及び2に記載されるように4インチのシリコンウェハ上に形成した。加えて、上記実施例3の比較ポリマーもシリコンウェハ上に堆積させた。これらのコーティングの熱除去性は、コーティングされたウェハを、以下の表4に要約されるように様々な持続時間にわたって異なる温度で加熱し、フィルム厚さの変化を定期的に監視することによって決定した。
本出願は、「THERMALLY REMOVABLE FILL MATERIALS FOR ANTI−STICTION APPLICATIONS」と題された、2017年9月21日に出願された米国特許仮出願第62/561,481号の米国特許法第119条(e)の下での利益を主張するものであり、これらの開示は、その全体が参照により本明細書に組み込まれる。
Claims (20)
- 半導体基板特徴部の崩壊を防止するための方法であって、
前記特徴部間の空間を伴う、複数の高アスペクト比特徴部を有する、パターン化された半導体基板を提供する工程であって、前記空間が、洗浄溶液で少なくとも部分的に充填されている、工程と、
前記洗浄溶液を、少なくとも1つの一次溶媒と、ポリアルケンカーボネート(PAC)ポリマー及び糖類からなる群から選択される少なくとも1つの充填材料と、を含む、置換溶液で置換する工程であって、前記少なくとも1つの充填材料が、熱分解温度を有する、工程と、
前記充填材料の前記熱分解温度未満の第1の高温に前記基板を曝露して、前記空間から前記溶媒を実質的に除去し、前記空間内で実質的に固体形態の前記充填材料を堆積させる工程と、
前記充填材料の前記熱分解温度以上の第2の高温に前記基板を曝露して、前記空間から前記充填材料を熱分解及び除去する工程と、を含む、方法。 - 前記少なくとも1つの充填材料が、ポリプロピレンカーボネート、ポリブチレンカーボネート、ポリ(シクロヘキセン)カーボネート、ポリ(シクロヘキセンプロピレン)カーボネート、ポリ(ノルボルネン(norborene))カーボネート、及びこれらの組み合わせからなる群から選択される、少なくとも1つのポリアルケンカーボネート(PAC)ポリマーを含む、請求項1に記載の方法。
- 前記少なくとも1つの充填材料が、前記置換溶液の総重量に基づいて、5重量%〜15重量%の量で存在するポリプロピレンカーボネートを含む、請求項1に記載の方法。
- 前記少なくとも1つの充填材料が、単糖類、二糖類、及びこれらの組み合わせからなる群から選択される、少なくとも1つの糖類を含む、請求項1に記載の方法。
- 前記第1の温度が、100℃〜175℃である、請求項1に記載の方法。
- 前記第2の温度が、250℃〜300℃である、請求項1に記載の方法。
- 前記少なくとも1つの一次溶媒が、50℃〜250℃の沸点を有する、請求項1に記載の方法。
- 前記置換工程が、スピンコーティングを介して実施される、請求項1に記載の方法。
- 前記少なくとも1つのポリマーが、実質的に水に不溶性である、請求項1に記載の方法。
- 前記置換溶液が、前記置換溶液の総重量に基づいて、5重量%〜30重量%の前記少なくとも1つの充填材料を含む、請求項1に記載の方法。
- 前記置換溶液が、少なくとも1つの二次溶媒を更に含む、請求項1に記載の方法。
- 前記置換溶液が、熱酸発生剤(TAG)及び熱塩基発生剤(TBG)からなる群から選択される、少なくとも1つの触媒を更に含む、請求項1に記載の方法。
- 前記第2の曝露工程が、前記シリコン基板を真空に曝露する工程を更に含む、請求項1に記載の方法。
- 前記曝露工程が、周囲空気雰囲気及び不活性ガスの雰囲気のうちの1つで行われる、請求項1に記載の方法。
- 半導体基板特徴部の崩壊を防止するための方法であって、
前記特徴部間の空間を伴う、複数の高アスペクト比特徴部を有する、パターン化された半導体基板を提供する工程であって、前記空間が、洗浄溶液で少なくとも部分的に充填されている、工程と、
前記洗浄液を、少なくとも1つの溶媒及び少なくとも1つのポリアルケンカーボネート(PAC)ポリマーを含む置換溶液で置換する工程であって、前記ポリマーが、熱分解温度を有する、工程と、
前記基板を100℃〜175℃の温度及び前記ポリマーの熱分解温度未満に曝露して、前記空間から前記溶媒を実質的に除去し、前記空間内で実質的に固体形態で前記ポリマーを堆積させる工程と、
前記基板を250℃〜300℃の温度及び前記熱分解温度以上に曝露して、前記ポリマーを前記空間から熱分解及び除去する工程と、を含む、方法。 - 少なくとも1つのポリアルケンカーボネート(PAC)ポリマーが、ポリプロピレンカーボネート、ポリブチレンカーボネート、ポリ(シクロヘキセン)カーボネート、ポリ(シクロヘキセンプロピレン)カーボネート、ポリ(ノルボルネン(norborene))カーボネート、及びこれらの組み合わせからなる群から選択される、請求項15に記載の方法。
- 前記少なくとも1つの充填材料が、前記置換溶液の総重量に基づいて、5重量%〜15重量%の量で存在するポリプロピレンカーボネートを含む、請求項15に記載の方法。
- 半導体基板特徴部の崩壊を防止するための方法であって、
前記特徴部間の空間を伴う、複数の高アスペクト比特徴部を有する、パターン化された半導体基板を提供する工程であって、前記空間が、洗浄溶液で少なくとも部分的に充填されている、工程と、
前記洗浄溶液を、少なくとも1つの溶媒と、熱分解温度を有する少なくとも1つの糖類と、を含む、置換溶液で少なくとも部分的に置換する工程と、
前記基板を100℃〜175℃の温度及び前記糖類の前記熱分解温度未満に曝露して、前記空間から前記溶媒を実質的に除去し、前記空間内に実質的に固体形態で前記糖類を堆積させる工程と、
前記基板を、250℃〜300℃の温度及び前記熱分解温度以上に曝露して、前記空間から前記糖類を熱分解及び除去する工程と、を含む、方法。 - 前記少なくとも1つの糖類が、単糖類、二糖類、及びこれらの組み合わせからなる群から選択される、請求項17に記載の方法。
- 前記少なくとも1つの糖類が、スクロースを含む、請求項17に記載の方法。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201762561481P | 2017-09-21 | 2017-09-21 | |
US62/561,481 | 2017-09-21 | ||
US16/126,010 US10748757B2 (en) | 2017-09-21 | 2018-09-10 | Thermally removable fill materials for anti-stiction applications |
US16/126,010 | 2018-09-10 | ||
PCT/US2018/050482 WO2019060182A1 (en) | 2017-09-21 | 2018-09-11 | HEAT-REMOVABLE FILLING MATERIALS FOR STATIC ANTI-FRICTION APPLICATIONS |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2020535459A true JP2020535459A (ja) | 2020-12-03 |
Family
ID=65720545
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2020515176A Pending JP2020535459A (ja) | 2017-09-21 | 2018-09-11 | 反スティクション用途のための熱除去可能充填材料 |
Country Status (6)
Country | Link |
---|---|
US (1) | US10748757B2 (ja) |
JP (1) | JP2020535459A (ja) |
KR (1) | KR20200035312A (ja) |
CN (1) | CN111133557B (ja) |
TW (1) | TWI812644B (ja) |
WO (1) | WO2019060182A1 (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10727044B2 (en) | 2017-09-21 | 2020-07-28 | Honeywell International Inc. | Fill material to mitigate pattern collapse |
US20220044924A1 (en) * | 2020-08-05 | 2022-02-10 | Changxin Memory Technologies, Inc. | Semiconductor structure processing method and manufacturing method |
Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002047430A (ja) * | 2000-04-24 | 2002-02-12 | Shipley Co Llc | アパーチャ充填用組成物 |
WO2004074938A1 (ja) * | 2003-02-21 | 2004-09-02 | Nissan Chemical Industries, Ltd. | アクリル系ポリマーを含有するリソグラフィー用ギャップフィル材形成組成物 |
JP2011124313A (ja) * | 2009-12-09 | 2011-06-23 | Tokyo Electron Ltd | 基板処理システム、基板処理装置、基板処理方法及び基板処理プログラムを記録した記録媒体 |
US20110205505A1 (en) * | 2010-02-21 | 2011-08-25 | Tokyo Electron Limited | Line pattern collapse mitigation through gap-fill material application |
JP2014514739A (ja) * | 2011-03-18 | 2014-06-19 | ビーエーエスエフ ソシエタス・ヨーロピア | 集積回路デバイス、光デバイス、マイクロマシン及び線幅50nm以下のパターニングされた材料層を有する機械的精密デバイスの製造方法 |
JP2015149384A (ja) * | 2014-02-06 | 2015-08-20 | 信越化学工業株式会社 | 半導体基板の洗浄乾燥方法 |
JP2017187609A (ja) * | 2016-04-05 | 2017-10-12 | アーゼッド・エレクトロニック・マテリアルズ(ルクセンブルグ)ソシエテ・ア・レスポンサビリテ・リミテ | ギャップフィリング組成物および低分子化合物を用いたパターン形成方法 |
JP2017215561A (ja) * | 2016-05-30 | 2017-12-07 | アーゼッド・エレクトロニック・マテリアルズ(ルクセンブルグ)ソシエテ・ア・レスポンサビリテ・リミテ | ギャップフィリング組成物、およびポリマーを含んでなる組成物を用いたパターン形成方法 |
JP2018186231A (ja) * | 2017-04-27 | 2018-11-22 | 信越化学工業株式会社 | 半導体基板の洗浄乾燥方法 |
JP2020533802A (ja) * | 2017-09-21 | 2020-11-19 | ハネウェル・インターナショナル・インコーポレーテッドHoneywell International Inc. | パターンの崩壊を緩和するための改善された充填材料 |
Family Cites Families (51)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4891334A (en) | 1987-11-10 | 1990-01-02 | Nippon Zeon Co., Ltd. | Process for production of electronic devices utilizing novolak resin as protective material |
US6114044A (en) | 1997-05-30 | 2000-09-05 | Regents Of The University Of California | Method of drying passivated micromachines by dewetting from a liquid-based process |
JP3087726B2 (ja) | 1998-05-25 | 2000-09-11 | 日本電気株式会社 | 半導体装置の製造プロセスにおけるパターニング方法 |
US6358673B1 (en) | 1998-09-09 | 2002-03-19 | Nippon Telegraph And Telephone Corporation | Pattern formation method and apparatus |
US6066889A (en) | 1998-09-22 | 2000-05-23 | International Business Machines Corporation | Methods of selectively filling apertures |
US6188301B1 (en) | 1998-11-13 | 2001-02-13 | General Electric Company | Switching structure and method of fabrication |
US7521405B2 (en) | 2002-08-12 | 2009-04-21 | Air Products And Chemicals, Inc. | Process solutions containing surfactants |
US6824879B2 (en) * | 1999-06-10 | 2004-11-30 | Honeywell International Inc. | Spin-on-glass anti-reflective coatings for photolithography |
KR100837987B1 (ko) | 2000-06-21 | 2008-06-16 | 텍사스 인스트루먼츠 인코포레이티드 | 용해 수지를 이용하는 마이크로 전기기계 시스템 장치의재코팅 방법 |
US6656666B2 (en) | 2000-12-22 | 2003-12-02 | International Business Machines Corporation | Topcoat process to prevent image collapse |
JP3815774B2 (ja) | 2001-10-12 | 2006-08-30 | 松下電器産業株式会社 | 電解質を含む電気化学素子 |
US6936183B2 (en) | 2001-10-17 | 2005-08-30 | Applied Materials, Inc. | Etch process for etching microstructures |
JP3815555B2 (ja) | 2002-06-06 | 2006-08-30 | インターナショナル・ビジネス・マシーンズ・コーポレーション | エッチング残渣除去方法 |
KR20050083777A (ko) * | 2002-10-16 | 2005-08-26 | 조지아 테크 리서치 코오포레이션 | 중합체, 그의 사용 방법, 및 그의 분해 방법 |
US6833320B2 (en) | 2002-11-04 | 2004-12-21 | Intel Corporation | Removing sacrificial material by thermal decomposition |
US20040139987A1 (en) | 2003-01-13 | 2004-07-22 | Mount David J. | Method for releasing and drying moveable elements of micro-electronic mechanical structures with organic thin film sacrificial layers |
KR100570211B1 (ko) * | 2003-12-24 | 2006-04-12 | 주식회사 하이닉스반도체 | 유기 반사방지막용 가교제 중합체, 이를 포함하는 유기반사 방지막 조성물 및 이를 이용한 포토레지스트의 패턴형성 방법 |
US7119025B2 (en) | 2004-04-08 | 2006-10-10 | Micron Technology, Inc. | Methods of eliminating pattern collapse on photoresist patterns |
US7371509B2 (en) | 2004-05-07 | 2008-05-13 | Micron Technology, Inc. | Resist pattern and reflow technology |
KR100539268B1 (ko) | 2004-06-24 | 2005-12-27 | 삼성전자주식회사 | 반도체 메모리 소자의 제조 방법 |
US7452568B2 (en) | 2005-02-04 | 2008-11-18 | International Business Machines Corporation | Centrifugal method for filing high aspect ratio blind micro vias with powdered materials for circuit formation |
JP4237184B2 (ja) | 2005-03-31 | 2009-03-11 | エルピーダメモリ株式会社 | 半導体装置の製造方法 |
WO2006107942A1 (en) | 2005-04-05 | 2006-10-12 | Analog Devices, Inc. | Vapor hf etch process mask and method |
JP2006319063A (ja) | 2005-05-11 | 2006-11-24 | Toshiba Corp | 半導体装置の製造方法 |
JP2007019161A (ja) | 2005-07-06 | 2007-01-25 | Dainippon Screen Mfg Co Ltd | パターン形成方法及び被膜形成装置 |
WO2007047365A2 (en) | 2005-10-13 | 2007-04-26 | Advanced Technology Materials, Inc. | Metals compatible photoresist and/or sacrificial antireflective coating removal composition |
GB0523715D0 (en) | 2005-11-22 | 2005-12-28 | Cavendish Kinetics Ltd | Method of minimising contact area |
JP2008034779A (ja) | 2006-06-27 | 2008-02-14 | Dainippon Screen Mfg Co Ltd | 基板処理方法および基板処理装置 |
US9111950B2 (en) | 2006-09-28 | 2015-08-18 | Philips Lumileds Lighting Company, Llc | Process for preparing a semiconductor structure for mounting |
KR101145823B1 (ko) | 2006-11-23 | 2012-05-16 | 주식회사 엘지화학 | 프린팅용 수지 조성물 및 이를 이용한 패턴 형성 방법 |
JP2010511740A (ja) | 2006-11-30 | 2010-04-15 | ザ テキサス エー アンド エム ユニバーシティ システム | ナノコンポジットポリマーの製造に有用な挿入剤非含有組成物 |
US7473598B2 (en) | 2007-04-22 | 2009-01-06 | Nanya Technology Corp. | Method for forming stack capacitor |
CN101784958B (zh) * | 2007-08-24 | 2013-03-27 | 东丽株式会社 | 感光性组合物、由该组合物形成的固化膜、以及具有固化膜的元件 |
KR100928111B1 (ko) | 2007-11-30 | 2009-11-24 | 주식회사 동부하이텍 | 반도체 소자의 제조 방법 |
US7967916B2 (en) | 2008-03-14 | 2011-06-28 | Lam Research Corporation | Method of preventing pattern collapse during rinsing and drying |
US7838425B2 (en) | 2008-06-16 | 2010-11-23 | Kabushiki Kaisha Toshiba | Method of treating surface of semiconductor substrate |
US20100122711A1 (en) | 2008-11-14 | 2010-05-20 | Advanced Micro Devices, Inc. | wet clean method for semiconductor device fabrication processes |
US8367594B2 (en) | 2009-06-24 | 2013-02-05 | Lam Research Corporation | Damage free, high-efficiency, particle removal cleaner comprising polyvinyl alcohol particles |
US8569091B2 (en) | 2009-08-27 | 2013-10-29 | International Business Machines Corporation | Integrated circuit switches, design structure and methods of fabricating the same |
JP5404364B2 (ja) | 2009-12-15 | 2014-01-29 | 株式会社東芝 | 半導体基板の表面処理装置及び方法 |
US8617993B2 (en) | 2010-02-01 | 2013-12-31 | Lam Research Corporation | Method of reducing pattern collapse in high aspect ratio nanostructures |
US20130280123A1 (en) | 2010-08-27 | 2013-10-24 | Advanced Technology Materials, Inc. | Method for preventing the collapse of high aspect ratio structures during drying |
US8541301B2 (en) | 2011-07-12 | 2013-09-24 | International Business Machines Corporation | Reduction of pore fill material dewetting |
GB2494168B (en) | 2011-09-01 | 2014-04-09 | Memsstar Ltd | Improved deposition technique for micro electro-mechanical structures (MEMS) |
JP5632860B2 (ja) | 2012-01-05 | 2014-11-26 | 東京エレクトロン株式会社 | 基板洗浄方法、基板洗浄装置及び基板洗浄用記憶媒体 |
MY181266A (en) * | 2012-12-14 | 2020-12-21 | Basf Se | Use of compositions comprising a surfactant and a hydrophobizer for avoiding anti pattern collapse when treating patterned materials with line-space dimensions of 50 nm or below |
US9153479B2 (en) | 2013-03-11 | 2015-10-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of preventing a pattern collapse |
US9666427B2 (en) * | 2013-06-21 | 2017-05-30 | Lam Research Corporation | Method of collapse-free drying of high aspect ratio structures |
US10090376B2 (en) | 2013-10-29 | 2018-10-02 | Micron Technology, Inc. | Methods of forming semiconductor device structures, and methods of forming capacitor structures |
KR101941214B1 (ko) | 2014-03-08 | 2019-01-23 | 주식회사 제우스 | 기판의 건조 방법 |
US9698014B2 (en) | 2014-07-30 | 2017-07-04 | Taiwan Semiconductor Manufacturing Co., Ltd | Photoresist composition to reduce photoresist pattern collapse |
-
2018
- 2018-09-10 US US16/126,010 patent/US10748757B2/en active Active
- 2018-09-11 WO PCT/US2018/050482 patent/WO2019060182A1/en active Application Filing
- 2018-09-11 JP JP2020515176A patent/JP2020535459A/ja active Pending
- 2018-09-11 CN CN201880060452.5A patent/CN111133557B/zh active Active
- 2018-09-11 KR KR1020207007553A patent/KR20200035312A/ko not_active Application Discontinuation
- 2018-09-20 TW TW107133102A patent/TWI812644B/zh active
Patent Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002047430A (ja) * | 2000-04-24 | 2002-02-12 | Shipley Co Llc | アパーチャ充填用組成物 |
WO2004074938A1 (ja) * | 2003-02-21 | 2004-09-02 | Nissan Chemical Industries, Ltd. | アクリル系ポリマーを含有するリソグラフィー用ギャップフィル材形成組成物 |
JP2011124313A (ja) * | 2009-12-09 | 2011-06-23 | Tokyo Electron Ltd | 基板処理システム、基板処理装置、基板処理方法及び基板処理プログラムを記録した記録媒体 |
US20110205505A1 (en) * | 2010-02-21 | 2011-08-25 | Tokyo Electron Limited | Line pattern collapse mitigation through gap-fill material application |
JP2014514739A (ja) * | 2011-03-18 | 2014-06-19 | ビーエーエスエフ ソシエタス・ヨーロピア | 集積回路デバイス、光デバイス、マイクロマシン及び線幅50nm以下のパターニングされた材料層を有する機械的精密デバイスの製造方法 |
JP2015149384A (ja) * | 2014-02-06 | 2015-08-20 | 信越化学工業株式会社 | 半導体基板の洗浄乾燥方法 |
JP2017187609A (ja) * | 2016-04-05 | 2017-10-12 | アーゼッド・エレクトロニック・マテリアルズ(ルクセンブルグ)ソシエテ・ア・レスポンサビリテ・リミテ | ギャップフィリング組成物および低分子化合物を用いたパターン形成方法 |
JP2017215561A (ja) * | 2016-05-30 | 2017-12-07 | アーゼッド・エレクトロニック・マテリアルズ(ルクセンブルグ)ソシエテ・ア・レスポンサビリテ・リミテ | ギャップフィリング組成物、およびポリマーを含んでなる組成物を用いたパターン形成方法 |
JP2018186231A (ja) * | 2017-04-27 | 2018-11-22 | 信越化学工業株式会社 | 半導体基板の洗浄乾燥方法 |
JP2020533802A (ja) * | 2017-09-21 | 2020-11-19 | ハネウェル・インターナショナル・インコーポレーテッドHoneywell International Inc. | パターンの崩壊を緩和するための改善された充填材料 |
Also Published As
Publication number | Publication date |
---|---|
US20190088464A1 (en) | 2019-03-21 |
US10748757B2 (en) | 2020-08-18 |
WO2019060182A1 (en) | 2019-03-28 |
KR20200035312A (ko) | 2020-04-02 |
TW201925449A (zh) | 2019-07-01 |
CN111133557B (zh) | 2023-11-24 |
TWI812644B (zh) | 2023-08-21 |
CN111133557A (zh) | 2020-05-08 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR102195470B1 (ko) | 포토레지스트 패턴 트리밍 방법 | |
US9996008B2 (en) | Photoresist pattern trimming methods | |
TW200819927A (en) | Stripper containing an acetal or ketal for removing post-etched photo-resist, etch polymer and residue | |
JP6951558B2 (ja) | パターンの崩壊を緩和するための改善された充填材料 | |
KR20110111473A (ko) | 더블- 및 트리플-패터닝 리소그라피를 위한 핀-온 스페이서 재료들 | |
JP2020535459A (ja) | 反スティクション用途のための熱除去可能充填材料 | |
CN108803236A (zh) | 图案形成方法和光致抗蚀剂图案外涂层组合物 | |
KR102524155B1 (ko) | 갭 충전 조성물 및 중합체를 함유하는 조성물을 이용한 패턴의 형성 방법 | |
KR102147182B1 (ko) | 패턴-형성 방법 | |
JP2021536665A (ja) | パターン崩壊緩和のための水溶性ポリマー | |
JP4762867B2 (ja) | ホトリソグラフィ用洗浄液およびこれを用いた基板の洗浄方法 | |
WO2017207452A1 (en) | Gap filling composition and pattern forming method using composition containing polymer | |
WO2007063985A1 (ja) | ホトリソグラフィ用洗浄液およびこれを用いた基板の洗浄方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20200313 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20200313 |
|
RD03 | Notification of appointment of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7423 Effective date: 20200318 |
|
RD04 | Notification of resignation of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7424 Effective date: 20200324 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20210416 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20210427 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20211129 |