JP2020534704A - 半導体多層構造 - Google Patents
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 87
- 239000000463 material Substances 0.000 claims abstract description 65
- 239000000758 substrate Substances 0.000 claims abstract description 62
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims abstract description 21
- 229910021478 group 5 element Inorganic materials 0.000 claims abstract description 8
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 claims abstract description 7
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims description 27
- 230000005693 optoelectronics Effects 0.000 claims description 27
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 claims description 18
- 229910052710 silicon Inorganic materials 0.000 claims description 10
- 238000004377 microelectronic Methods 0.000 claims description 8
- 238000010586 diagram Methods 0.000 abstract 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 20
- 238000009825 accumulation Methods 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 5
- 230000004888 barrier function Effects 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- 230000006835 compression Effects 0.000 description 3
- 238000007906 compression Methods 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 238000002441 X-ray diffraction Methods 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000005670 electromagnetic radiation Effects 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 239000006096 absorbing agent Substances 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000001186 cumulative effect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
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Abstract
Description
60 マイクロエレクトロニクス半導体素子
2,24 Ge層
3,4,11,23 オプトエレクトロニクス半導体多層構造
5,7,17 基板
6 Si層
8 歪み補償層
12 多重量子井戸構造
13 導波路層
14 クラッド層
15 接点層
16 SiGe層
18 分布型ブラッグ反射器
19 マイクロエレクトロニクス半導体多層構造
21 AlGaAsベース層
22 AlGaInAsNSb層
25 ソース/ドレイン
26 ゲート
Claims (11)
- 半導体素子(1,10,20,30,40,50,60)であって、
Geでできた層(2,24)を有する基板(5,7,17)と、
半導体多層構造(3,4,9,11,19,23)であって、
AlxGa1-xAs(xが約0.6)と、
AlxGa1-x-yInyAs(0≦x≦0.6及び0≦y≦0.02)と、
AlxGa1-x-yInyAs1-zPz、AlxGa1-x-yInyAs1-zNz及びAlxGa1-x-yInyAs1-z-cNzPc(0≦x≦1、0≦y≦1、0≦z≦0.3、及び0≦c≦1)と、
AlxGa1-x-yInyAs1-z-cNzSbc(0≦x≦1、0≦y≦1、0≦z≦0.3、及び0≦c≦0.7)と、
AlxGa1-x-yInyAs1-z-cPzSbc(0≦x≦1、0≦y≦1、0≦z≦1及び0≦c≦0.3)からなる群から選択された材料からなり、任意の材料に関して、全てのIII族元素の含有率の和が1であり、全てのV族元素の含有率の和が1である少なくとも1つの第1層と、
GaInAsNSb、GaInAsN、AlGaInAsNSb、AlGaInAsN、GaAs、GaInAs、GaInAsSb、GaInNSb、GaInP、GaInPNSb、GaInPSb、GaInPN、AlInP、AlInPNSb、AlInPN、AlInPSb、AlGaInP、AlGaInPNSb、AlGaInPN、AlGaInPSb、GaInAsP、GaInAsPNSb、GaInAsPN、GaInAsPSb、GaAsP、GaAsPNSb、GaAsPN、GaAsPSb AlGaInAs及びAlGaAsからなる群から選択された材料からなり、任意の材料に関して、全てのIII族元素の含有率の和が1であり、全てのV族元素の含有率の和が1である少なくとも1つの第2層とを有する半導体多層構造(3,4,9,11,19,23)とを備え、
前記半導体多層構造(3,4,9,11)が、前記基板(5,7,17)の前記Ge層(2,24)上に成長された半導体素子(1,10,20,30,40,50,60)。 - 前記半導体多層構造が、
不活性層を形成する複数の前記第1層と、
活性層を形成する複数の第2層とを有するオプトエレクトロニクス半導体多層構造(3,4,9,11,23)である、請求項1に記載の半導体素子(1,10,20,30,40,50)。 - 前記半導体多層構造(3,4,9,11,19,23)の少なくとも1つの第1層が、xが約0.6であり、0≦x≦0.6ならば前記材料がAlxGa1-xAsであり、0≦y≦0.02又はx>0.6ならば前記材料がAlxGa1-x-yInyAsであり、前記材料が、AlxGa1-x-yInyAszP1-z、AlxGa1-x-yInyAs1-zNz及びAlxGa1-x-yInyAs1-z-cNzPc(0≦y≦0.02、0≦z≦0.3、及び0≦c≦1)からなる群から選択されるという条件のうちの1つを満たすAlxGa1-xAs材料からなる、請求項1又は2に記載の半導体素子(1,10,20,30,40,50,60)。
- 前記半導体多層構造(3,4,9,11,19,23)の少なくとも1つの第1層が、GaAsの格子定数とGeの格子定数の差だけ又はこれより小さい前記基板(5,7,17)の前記Ge層(2,24)の格子定数とは異なる格子定数を有する、請求項1乃至3のいずれかに記載の半導体素子(1,10,20,30,40,50,60)。
- 前記基板(5,7,17)が、Si、SiGe及びGeからなる群から選択された材料の1つ以上の付加層(6)を含む、請求項1乃至4のいずれかに記載の半導体素子(1,10,20,30,40,50,60)。
- 前記Ge層(2)が、前記基板の前記少なくとも1つの付加層に対して歪み緩和された、請求項1乃至5のいずれかに記載の半導体素子(1,10,20,30,40,50,60)。
- 前記Ge層(24)が、前記基板(7)の前記少なくとも1つの付加層(6)に対して圧縮歪みされ、前記基板(7)が、更に、歪み補償層(8)を有し、前記歪み補償層(8)が、前記Ge層(2)と前記半導体多層構造(3,4,9,11)の間、又は前記Ge層(2)と前記基板(7)の別の層の間で前記Ge層(2)と直接接触して成長された、請求項6に記載の半導体素子(1,10,20,30,40,50,60)。
- 前記半導体多層構造(3,4,9,11)が、レーザ利得構造を構成するヘテロ構造である、請求項2に記載の半導体素子(1,10,20,30,40,50,60)。
- 前記基板(5,7)の前記更なる層(6)上にマイクロエレクトロニクス素子が製造された、請求項5に記載の半導体素子(1,10,20,30,40,50,60)。
- 前記オプトエレクトロニクス半導体多層構造(3,4,9,11)が、AlGaAsベース材料の複数の層を有する分布型ブラッグ反射器を含む、請求項2に記載の半導体素子(1,10,20,30,40,50,60)。
- 前記半導体多層構造がトランジスタである、請求項1乃至10のいずれかに記載の半導体素子(1,10,20,30,40,50,60)。
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WO2019052672A1 (en) | 2019-03-21 |
JP7157162B2 (ja) | 2022-10-19 |
US20200266610A1 (en) | 2020-08-20 |
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US20220021188A2 (en) | 2022-01-20 |
EP3685450A1 (en) | 2020-07-29 |
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