JP2020532140A - 高選択性酸化物除去および高温汚染物質除去と統合されたエピタキシシステム - Google Patents
高選択性酸化物除去および高温汚染物質除去と統合されたエピタキシシステム Download PDFInfo
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- JP2020532140A JP2020532140A JP2020512399A JP2020512399A JP2020532140A JP 2020532140 A JP2020532140 A JP 2020532140A JP 2020512399 A JP2020512399 A JP 2020512399A JP 2020512399 A JP2020512399 A JP 2020512399A JP 2020532140 A JP2020532140 A JP 2020532140A
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- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
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- B08B7/0035—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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Abstract
Description
Claims (15)
- 少なくとも1つの気相エピタキシチャンバに結合された移送チャンバと、
前記移送チャンバに結合された酸化物除去チャンバとを備える処理システムであって、前記酸化物除去チャンバが、
混合チャンバおよびガス分配器を有するリッドアセンブリと、
前記リッドアセンブリの一部分を貫通して形成され、前記混合チャンバと流体連結している第1のガス入口と、
前記リッドアセンブリの一部分を貫通して形成され、前記混合チャンバと流体連結している第2のガス入口と、
前記リッドアセンブリの一部分を貫通して形成され、前記混合チャンバと流体連結している第3のガス入口と、
基板支持体であって、
基板支持面、
冷却チャネル、および
前記基板支持面の凹部に配置され前記基板支持体を介してリフトアクチュエータに結合されたリフト部材を有する、基板支持体を含み、前記処理システムがさらに
前記移送チャンバに結合されたプラズマ汚染物質除去チャンバであって、
遠隔プラズマ源を含む、プラズマ汚染物質除去チャンバと、
上に配置された基板を25℃から650℃の間の温度に加熱するように動作可能な基板支持体と
を備える、処理システム。 - 前記酸化物除去チャンバがプラズマ発生源を備える、請求項1に記載の処理システム。
- 前記プラズマ発生源が、RF源またはマイクロ波源を使用することによってプラズマを形成するように構成されている前記遠隔プラズマ源を備える、請求項2に記載の処理システム。
- 前記遠隔プラズマ源が前記チャンバの蓋に結合される、請求項2に記載の処理システム。
- 膜形成チャンバがエピタキシチャンバである、請求項1に記載の処理システム。
- 前記酸化物除去チャンバが遠隔プラズマチャンバと、冷却チャネルを有する基板支持体とを含む、請求項1に記載の処理システム。
- 前記酸化物除去チャンバがフッ素処理チャンバであり、前記プラズマ汚染物質除去チャンバが水素処理チャンバであり、前記膜形成チャンバがエピタキシチャンバである、請求項1に記載の処理システム。
- 前記酸化物除去チャンバが、冷却チャネルを有する基板支持体を含み、前記プラズマ汚染物質除去チャンバが、上に配置された基板を300℃より高い温度に加熱するように動作可能な基板支持体を含む、請求項7に記載の処理システム。
- アニールチャンバをさらに備える、請求項8に記載の処理システム。
- 少なくとも1つの膜形成チャンバに結合された第1の移送チャンバと、
第2の移送チャンバと、
前記第1または第2の移送チャンバに結合されたプラズマ酸化物除去チャンバと、
前記第1または第2の移送チャンバに結合されたプラズマ汚染物質除去チャンバと、
前記第2の移送チャンバに結合されたロードロックチャンバと
を備える、処理システム。 - 酸化物除去チャンバをさらに備える、請求項10に記載の処理システム。
- 前記プラズマ酸化物除去チャンバがプラズマ発生源を備える、請求項10に記載の処理システム。
- 前記プラズマ発生源が、RF源またはマイクロ波源を使用することによってプラズマを形成するように構成されている遠隔プラズマ源を備える、請求項12に記載の処理システム。
- 前記遠隔プラズマ源が前記チャンバの蓋に結合される、請求項13に記載の処理システム。
- 前記少なくとも1つの膜形成チャンバがエピタキシチャンバである、請求項10に記載の処理システム。
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PCT/US2018/046497 WO2019046000A1 (en) | 2017-08-30 | 2018-08-13 | INTEGRATED EPITAXIAL SYSTEM WITH HIGH SELECTIVITY OXIDE REMOVAL AND REMOVAL OF HIGH TEMPERATURE CONTAMINANTS |
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