JP2020518990A5 - - Google Patents

Download PDF

Info

Publication number
JP2020518990A5
JP2020518990A5 JP2019560662A JP2019560662A JP2020518990A5 JP 2020518990 A5 JP2020518990 A5 JP 2020518990A5 JP 2019560662 A JP2019560662 A JP 2019560662A JP 2019560662 A JP2019560662 A JP 2019560662A JP 2020518990 A5 JP2020518990 A5 JP 2020518990A5
Authority
JP
Japan
Prior art keywords
electron beam
limiting aperture
lens array
source
holes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2019560662A
Other languages
English (en)
Japanese (ja)
Other versions
JP2020518990A (ja
Filing date
Publication date
Priority claimed from US15/587,720 external-priority patent/US10242839B2/en
Application filed filed Critical
Publication of JP2020518990A publication Critical patent/JP2020518990A/ja
Publication of JP2020518990A5 publication Critical patent/JP2020518990A5/ja
Priority to JP2022015515A priority Critical patent/JP7329637B2/ja
Pending legal-status Critical Current

Links

JP2019560662A 2017-05-05 2018-01-12 マルチビームカラムにおけるクーロン相互作用の低減 Pending JP2020518990A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2022015515A JP7329637B2 (ja) 2017-05-05 2022-02-03 電子ビームシステム及び方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US15/587,720 US10242839B2 (en) 2017-05-05 2017-05-05 Reduced Coulomb interactions in a multi-beam column
US15/587,720 2017-05-05
PCT/US2018/013425 WO2018203936A1 (en) 2017-05-05 2018-01-12 Reduced coulomb interactions in a multi-beam column

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2022015515A Division JP7329637B2 (ja) 2017-05-05 2022-02-03 電子ビームシステム及び方法

Publications (2)

Publication Number Publication Date
JP2020518990A JP2020518990A (ja) 2020-06-25
JP2020518990A5 true JP2020518990A5 (enExample) 2021-02-18

Family

ID=64014281

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2019560662A Pending JP2020518990A (ja) 2017-05-05 2018-01-12 マルチビームカラムにおけるクーロン相互作用の低減
JP2022015515A Active JP7329637B2 (ja) 2017-05-05 2022-02-03 電子ビームシステム及び方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2022015515A Active JP7329637B2 (ja) 2017-05-05 2022-02-03 電子ビームシステム及び方法

Country Status (7)

Country Link
US (1) US10242839B2 (enExample)
EP (1) EP3549154A4 (enExample)
JP (2) JP2020518990A (enExample)
KR (1) KR102352097B1 (enExample)
CN (1) CN110313048B (enExample)
IL (1) IL267815B (enExample)
WO (1) WO2018203936A1 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11615938B2 (en) * 2019-12-20 2023-03-28 Nuflare Technology, Inc. High-resolution multiple beam source
JP7503635B2 (ja) 2020-01-06 2024-06-20 エーエスエムエル ネザーランズ ビー．ブイ． 荷電粒子評価ツール、検査方法
US12451319B2 (en) 2020-10-05 2025-10-21 Kla Corporation Electron source with magnetic suppressor electrode
US11699564B2 (en) 2020-10-23 2023-07-11 Nuflare Technology, Inc. Schottky thermal field emitter with integrated beam splitter
US11869743B2 (en) * 2021-05-11 2024-01-09 Kla Corporation High throughput multi-electron beam system
US11651934B2 (en) 2021-09-30 2023-05-16 Kla Corporation Systems and methods of creating multiple electron beams

Family Cites Families (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4419182A (en) * 1981-02-27 1983-12-06 Veeco Instruments Inc. Method of fabricating screen lens array plates
JP4647820B2 (ja) * 2001-04-23 2011-03-09 キヤノン株式会社 荷電粒子線描画装置、および、デバイスの製造方法
JP2003077814A (ja) * 2001-09-05 2003-03-14 Nikon Corp 荷電粒子線露光装置の結像性能の計測方法及びその計測装置、荷電粒子線露光装置
US6768125B2 (en) * 2002-01-17 2004-07-27 Ims Nanofabrication, Gmbh Maskless particle-beam system for exposing a pattern on a substrate
JP5053514B2 (ja) 2002-10-30 2012-10-17 マッパー・リソグラフィー・アイピー・ビー．ブイ． 電子ビーム露光システム
JP4459568B2 (ja) * 2003-08-06 2010-04-28 キヤノン株式会社 マルチ荷電ビームレンズおよびそれを用いた荷電ビーム露光装置
GB2408143B (en) * 2003-10-20 2006-11-15 Ims Nanofabrication Gmbh Charged-particle multi-beam exposure apparatus
US7176459B2 (en) 2003-12-25 2007-02-13 Ebara Corporation Electron beam apparatus
KR101099487B1 (ko) * 2004-05-17 2011-12-28 마퍼 리쏘그라피 아이피 비.브이. 대전 입자 빔 노광 시스템
JP5222142B2 (ja) 2005-09-06 2013-06-26 カール・ツァイス・エスエムティー・ゲーエムベーハー 粒子光学部品
US8134135B2 (en) * 2006-07-25 2012-03-13 Mapper Lithography Ip B.V. Multiple beam charged particle optical system
WO2008013442A1 (en) * 2006-07-25 2008-01-31 Mapper Lithography Ip B.V. A multiple beam charged particle optical system
KR101118692B1 (ko) * 2006-10-11 2012-03-12 전자빔기술센터 주식회사 자기 렌즈층을 포함한 전자 칼럼
JP5103033B2 (ja) * 2007-03-02 2012-12-19 株式会社日立ハイテクノロジーズ 荷電粒子線応用装置
US7821187B1 (en) * 2007-09-07 2010-10-26 Kla-Tencor Corporation Immersion gun equipped electron beam column
US7960697B2 (en) 2008-10-23 2011-06-14 Hermes-Microvision, Inc. Electron beam apparatus
JP2011059057A (ja) * 2009-09-14 2011-03-24 Fujitsu Ltd 電子スピン分析器及び表面観察装置
US8294125B2 (en) * 2009-11-18 2012-10-23 Kla-Tencor Corporation High-sensitivity and high-throughput electron beam inspection column enabled by adjustable beam-limiting aperture
US9184024B2 (en) 2010-02-05 2015-11-10 Hermes-Microvision, Inc. Selectable coulomb aperture in E-beam system
TWI593961B (zh) 2010-12-15 2017-08-01 日立全球先端科技股份有限公司 Charged particle line application device, and irradiation method
US8362425B2 (en) 2011-03-23 2013-01-29 Kla-Tencor Corporation Multiple-beam system for high-speed electron-beam inspection
KR20120128105A (ko) * 2011-05-16 2012-11-26 캐논 가부시끼가이샤 묘화 장치 및 물품의 제조 방법
US8618480B2 (en) * 2012-03-23 2013-12-31 Hermes Microvision Inc. Charged particle beam apparatus
EP2879155B1 (en) * 2013-12-02 2018-04-25 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Multi-beam system for high throughput EBI
JP2016197503A (ja) 2015-04-02 2016-11-24 株式会社ニューフレアテクノロジー 電子ビーム装置
US9607805B2 (en) * 2015-05-12 2017-03-28 Hermes Microvision Inc. Apparatus of plural charged-particle beams
US9922799B2 (en) * 2015-07-21 2018-03-20 Hermes Microvision, Inc. Apparatus of plural charged-particle beams
KR102007497B1 (ko) 2015-07-22 2019-08-05 에이에스엠엘 네델란즈 비.브이. 복수의 하전 입자 빔을 이용하는 장치

Similar Documents

Publication Publication Date Title
JP2020518990A5 (enExample)
CN109690726B (zh) 在多列扫描电子显微镜系统中用于校正阵列散光的设备及方法
NL1025500C2 (nl) Deeltjesbron met selecteerbare bundelstroom en energiespreiding.
US20160247663A1 (en) Charged particle beam system and method of operating the same
KR20210076117A (ko) 하전 입자 빔 디바이스, 필드 곡률 보정기, 및 하전 입자 빔 디바이스를 동작시키는 방법들
CN110313048B (zh) 在多射束柱中减少的库仑相互作用
US9099280B2 (en) X-ray tube and method of controlling X-ray focal spot using the same
JP2002033275A (ja) 荷電粒子リソグラフィ装置用の照明システム
US20170229279A1 (en) Field Curvature Correction for Multi-Beam Inspection Systems
CN106463322B (zh) 利用双维恩过滤器单色器的电子束成像
KR102325235B1 (ko) 전자 빔 시스템에서의 수차 정정을 위한 방법 및 시스템
CZ2014256A3 (cs) Rastrovací částicový mikroskop s energiově selektivním systémem detektoru
CN108140525B (zh) 具备电子能量损失谱仪的扫描透射型电子显微镜及其观察方法
TWI742226B (zh) 提取設備及系統，電子束系統，以及掃描電子顯微鏡
US9966219B2 (en) Electron energy loss spectrometer
NL2020747A (en) Charged particle source arrangement, a method for manufacturing a semiconductor device and a method for inspecting a target
JP2020529702A5 (enExample)
TWI742223B (zh) 電子束系統及方法，以及掃描電子顯微鏡
JP6732401B2 (ja) 粒子ビーム顕微鏡の操作方法及び粒子ビーム顕微鏡
US8063365B1 (en) Non-shot-noise-limited source for electron beam lithography or inspection
JP6261228B2 (ja) 集束イオンビーム装置、集束イオン／電子ビーム加工観察装置、及び試料加工方法
JP2019079953A5 (enExample)
WO2006126872A1 (en) Apparatus for the generation of parallel beamlets
JP2015029023A (ja) 描画装置、および、物品の製造方法
JP2005327497A (ja) Ｘ線発生装置