IL267815B - Reduced coulomb interactions in a multi-beam column - Google Patents
Reduced coulomb interactions in a multi-beam columnInfo
- Publication number
- IL267815B IL267815B IL267815A IL26781519A IL267815B IL 267815 B IL267815 B IL 267815B IL 267815 A IL267815 A IL 267815A IL 26781519 A IL26781519 A IL 26781519A IL 267815 B IL267815 B IL 267815B
- Authority
- IL
- Israel
- Prior art keywords
- electron beam
- lens array
- limiting aperture
- electron
- source
- Prior art date
Links
- 230000003993 interaction Effects 0.000 title description 11
- 238000010894 electron beam technology Methods 0.000 claims description 121
- 238000000034 method Methods 0.000 claims description 12
- 238000011144 upstream manufacturing Methods 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 3
- 229910001092 metal group alloy Inorganic materials 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 238000007689 inspection Methods 0.000 description 11
- 230000000694 effects Effects 0.000 description 8
- 238000005286 illumination Methods 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 5
- 238000012552 review Methods 0.000 description 5
- 230000007547 defect Effects 0.000 description 4
- 230000005684 electric field Effects 0.000 description 3
- 238000013461 design Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 210000001747 pupil Anatomy 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- 235000002566 Capsicum Nutrition 0.000 description 1
- 238000000342 Monte Carlo simulation Methods 0.000 description 1
- 239000006002 Pepper Substances 0.000 description 1
- 235000016761 Piper aduncum Nutrition 0.000 description 1
- 235000017804 Piper guineense Nutrition 0.000 description 1
- 244000203593 Piper nigrum Species 0.000 description 1
- 235000008184 Piper nigrum Nutrition 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000001186 cumulative effect Effects 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000013507 mapping Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
- H01J37/045—Beam blanking or chopping, i.e. arrangements for momentarily interrupting exposure to the discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
- H01J37/09—Diaphragms; Shields associated with electron or ion-optical arrangements; Compensation of disturbing fields
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
- H01J37/10—Lenses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
- H01J37/3177—Multi-beam, e.g. fly's eye, comb probe
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/04—Means for controlling the discharge
- H01J2237/043—Beam blanking
- H01J2237/0435—Multi-aperture
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/04—Means for controlling the discharge
- H01J2237/045—Diaphragms
- H01J2237/0451—Diaphragms with fixed aperture
- H01J2237/0453—Diaphragms with fixed aperture multiple apertures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/06—Sources
- H01J2237/061—Construction
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Electron Sources, Ion Sources (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Electron Beam Exposure (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Particle Accelerators (AREA)
- Radiation-Therapy Devices (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US15/587,720 US10242839B2 (en) | 2017-05-05 | 2017-05-05 | Reduced Coulomb interactions in a multi-beam column |
| PCT/US2018/013425 WO2018203936A1 (en) | 2017-05-05 | 2018-01-12 | Reduced coulomb interactions in a multi-beam column |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| IL267815A IL267815A (en) | 2019-09-26 |
| IL267815B true IL267815B (en) | 2022-08-01 |
Family
ID=64014281
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IL267815A IL267815B (en) | 2017-05-05 | 2018-01-12 | Reduced coulomb interactions in a multi-beam column |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US10242839B2 (enExample) |
| EP (1) | EP3549154A4 (enExample) |
| JP (2) | JP2020518990A (enExample) |
| KR (1) | KR102352097B1 (enExample) |
| CN (1) | CN110313048B (enExample) |
| IL (1) | IL267815B (enExample) |
| WO (1) | WO2018203936A1 (enExample) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11615938B2 (en) * | 2019-12-20 | 2023-03-28 | Nuflare Technology, Inc. | High-resolution multiple beam source |
| JP7503635B2 (ja) | 2020-01-06 | 2024-06-20 | エーエスエムエル ネザーランズ ビー．ブイ． | 荷電粒子評価ツール、検査方法 |
| US12451319B2 (en) | 2020-10-05 | 2025-10-21 | Kla Corporation | Electron source with magnetic suppressor electrode |
| US11699564B2 (en) * | 2020-10-23 | 2023-07-11 | Nuflare Technology, Inc. | Schottky thermal field emitter with integrated beam splitter |
| US11869743B2 (en) * | 2021-05-11 | 2024-01-09 | Kla Corporation | High throughput multi-electron beam system |
| US11651934B2 (en) | 2021-09-30 | 2023-05-16 | Kla Corporation | Systems and methods of creating multiple electron beams |
Family Cites Families (28)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4419182A (en) * | 1981-02-27 | 1983-12-06 | Veeco Instruments Inc. | Method of fabricating screen lens array plates |
| JP4647820B2 (ja) * | 2001-04-23 | 2011-03-09 | キヤノン株式会社 | 荷電粒子線描画装置、および、デバイスの製造方法 |
| JP2003077814A (ja) * | 2001-09-05 | 2003-03-14 | Nikon Corp | 荷電粒子線露光装置の結像性能の計測方法及びその計測装置、荷電粒子線露光装置 |
| US6768125B2 (en) * | 2002-01-17 | 2004-07-27 | Ims Nanofabrication, Gmbh | Maskless particle-beam system for exposing a pattern on a substrate |
| EP1556881B1 (en) * | 2002-10-30 | 2013-08-28 | Mapper Lithography Ip B.V. | Electron beam exposure system |
| JP4459568B2 (ja) * | 2003-08-06 | 2010-04-28 | キヤノン株式会社 | マルチ荷電ビームレンズおよびそれを用いた荷電ビーム露光装置 |
| GB2408143B (en) * | 2003-10-20 | 2006-11-15 | Ims Nanofabrication Gmbh | Charged-particle multi-beam exposure apparatus |
| US7176459B2 (en) | 2003-12-25 | 2007-02-13 | Ebara Corporation | Electron beam apparatus |
| KR101099487B1 (ko) * | 2004-05-17 | 2011-12-28 | 마퍼 리쏘그라피 아이피 비.브이. | 대전 입자 빔 노광 시스템 |
| EP2270833A3 (en) * | 2005-09-06 | 2011-01-26 | Carl Zeiss SMT AG | Particle-optical component |
| EP2050118A1 (en) * | 2006-07-25 | 2009-04-22 | Mapper Lithography IP B.V. | A multiple beam charged particle optical system |
| US8134135B2 (en) * | 2006-07-25 | 2012-03-13 | Mapper Lithography Ip B.V. | Multiple beam charged particle optical system |
| KR101118692B1 (ko) * | 2006-10-11 | 2012-03-12 | 전자빔기술센터 주식회사 | 자기 렌즈층을 포함한 전자 칼럼 |
| JP5103033B2 (ja) * | 2007-03-02 | 2012-12-19 | 株式会社日立ハイテクノロジーズ | 荷電粒子線応用装置 |
| US7821187B1 (en) * | 2007-09-07 | 2010-10-26 | Kla-Tencor Corporation | Immersion gun equipped electron beam column |
| US7960697B2 (en) | 2008-10-23 | 2011-06-14 | Hermes-Microvision, Inc. | Electron beam apparatus |
| JP2011059057A (ja) * | 2009-09-14 | 2011-03-24 | Fujitsu Ltd | 電子スピン分析器及び表面観察装置 |
| US8294125B2 (en) * | 2009-11-18 | 2012-10-23 | Kla-Tencor Corporation | High-sensitivity and high-throughput electron beam inspection column enabled by adjustable beam-limiting aperture |
| US9184024B2 (en) | 2010-02-05 | 2015-11-10 | Hermes-Microvision, Inc. | Selectable coulomb aperture in E-beam system |
| TWI593961B (zh) * | 2010-12-15 | 2017-08-01 | 日立全球先端科技股份有限公司 | Charged particle line application device, and irradiation method |
| US8362425B2 (en) | 2011-03-23 | 2013-01-29 | Kla-Tencor Corporation | Multiple-beam system for high-speed electron-beam inspection |
| KR20120128105A (ko) * | 2011-05-16 | 2012-11-26 | 캐논 가부시끼가이샤 | 묘화 장치 및 물품의 제조 방법 |
| US8618480B2 (en) * | 2012-03-23 | 2013-12-31 | Hermes Microvision Inc. | Charged particle beam apparatus |
| EP2879155B1 (en) * | 2013-12-02 | 2018-04-25 | ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH | Multi-beam system for high throughput EBI |
| JP2016197503A (ja) * | 2015-04-02 | 2016-11-24 | 株式会社ニューフレアテクノロジー | 電子ビーム装置 |
| US9607805B2 (en) * | 2015-05-12 | 2017-03-28 | Hermes Microvision Inc. | Apparatus of plural charged-particle beams |
| US9922799B2 (en) * | 2015-07-21 | 2018-03-20 | Hermes Microvision, Inc. | Apparatus of plural charged-particle beams |
| CN108738363B (zh) | 2015-07-22 | 2020-08-07 | Asml荷兰有限公司 | 多个带电粒子束的装置 |
-
2017
- 2017-05-05 US US15/587,720 patent/US10242839B2/en active Active
-
2018
- 2018-01-12 IL IL267815A patent/IL267815B/en unknown
- 2018-01-12 KR KR1020197036059A patent/KR102352097B1/ko active Active
- 2018-01-12 CN CN201880009523.9A patent/CN110313048B/zh active Active
- 2018-01-12 WO PCT/US2018/013425 patent/WO2018203936A1/en not_active Ceased
- 2018-01-12 JP JP2019560662A patent/JP2020518990A/ja active Pending
- 2018-01-12 EP EP18793779.2A patent/EP3549154A4/en active Pending
-
2022
- 2022-02-03 JP JP2022015515A patent/JP7329637B2/ja active Active
Also Published As
| Publication number | Publication date |
|---|---|
| WO2018203936A1 (en) | 2018-11-08 |
| US10242839B2 (en) | 2019-03-26 |
| KR20190138898A (ko) | 2019-12-16 |
| CN110313048B (zh) | 2021-03-12 |
| JP7329637B2 (ja) | 2023-08-18 |
| IL267815A (en) | 2019-09-26 |
| CN110313048A (zh) | 2019-10-08 |
| EP3549154A4 (en) | 2020-07-22 |
| KR102352097B1 (ko) | 2022-01-14 |
| US20180323034A1 (en) | 2018-11-08 |
| JP2020518990A (ja) | 2020-06-25 |
| EP3549154A1 (en) | 2019-10-09 |
| JP2022058874A (ja) | 2022-04-12 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| IL267815B (en) | Reduced coulomb interactions in a multi-beam column | |
| US10522320B2 (en) | Charged particle beam device and method for adjusting charged particle beam device | |
| CN102598195B (zh) | 分布式离子源加速镜筒 | |
| US11869743B2 (en) | High throughput multi-electron beam system | |
| JP2021516416A (ja) | 信号電子検出性能を向上させたマルチビーム検査装置 | |
| EP3594988B1 (en) | High performance inspection scanning electron microscope device and method of operating the same | |
| JP2024530855A (ja) | 高解像度、マルチ電子ビーム装置 | |
| JP4896877B2 (ja) | 収差補正装置及び収差補正装置を操作するための方法 | |
| JP7116154B2 (ja) | 高解像度の電子ビーム装置 | |
| TWI742223B (zh) | 電子束系統及方法，以及掃描電子顯微鏡 | |
| CN115398591B (zh) | 用于3d装置的检验及检视的电子束系统 | |
| JP4287850B2 (ja) | 荷電粒子ビーム応用装置 | |
| JP6261228B2 (ja) | 集束イオンビーム装置、集束イオン／電子ビーム加工観察装置、及び試料加工方法 | |
| TW202205336A (zh) | 具有多源系統和多射束粒子顯微鏡的粒子束系統 | |
| JP2006164969A (ja) | チルトした粒子ビームを照射するための装置と方法 |