JP2020518990A - マルチビームカラムにおけるクーロン相互作用の低減 - Google Patents

マルチビームカラムにおけるクーロン相互作用の低減 Download PDF

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Publication number
JP2020518990A
JP2020518990A JP2019560662A JP2019560662A JP2020518990A JP 2020518990 A JP2020518990 A JP 2020518990A JP 2019560662 A JP2019560662 A JP 2019560662A JP 2019560662 A JP2019560662 A JP 2019560662A JP 2020518990 A JP2020518990 A JP 2020518990A
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JP
Japan
Prior art keywords
electron beam
lens array
limiting aperture
electron
holes
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Pending
Application number
JP2019560662A
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English (en)
Japanese (ja)
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JP2020518990A5 (enExample
Inventor
アラン ディー ブロディー
アラン ディー ブロディー
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
KLA Corp
Original Assignee
KLA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by KLA Corp filed Critical KLA Corp
Publication of JP2020518990A publication Critical patent/JP2020518990A/ja
Publication of JP2020518990A5 publication Critical patent/JP2020518990A5/ja
Priority to JP2022015515A priority Critical patent/JP7329637B2/ja
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/045—Beam blanking or chopping, i.e. arrangements for momentarily interrupting exposure to the discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/09—Diaphragms; Shields associated with electron or ion-optical arrangements; Compensation of disturbing fields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/10—Lenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H01J37/3177—Multi-beam, e.g. fly's eye, comb probe
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/043—Beam blanking
    • H01J2237/0435—Multi-aperture
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/045—Diaphragms
    • H01J2237/0451—Diaphragms with fixed aperture
    • H01J2237/0453—Diaphragms with fixed aperture multiple apertures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/061—Construction

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Electron Beam Exposure (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Particle Accelerators (AREA)
  • Radiation-Therapy Devices (AREA)
JP2019560662A 2017-05-05 2018-01-12 マルチビームカラムにおけるクーロン相互作用の低減 Pending JP2020518990A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2022015515A JP7329637B2 (ja) 2017-05-05 2022-02-03 電子ビームシステム及び方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US15/587,720 US10242839B2 (en) 2017-05-05 2017-05-05 Reduced Coulomb interactions in a multi-beam column
US15/587,720 2017-05-05
PCT/US2018/013425 WO2018203936A1 (en) 2017-05-05 2018-01-12 Reduced coulomb interactions in a multi-beam column

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2022015515A Division JP7329637B2 (ja) 2017-05-05 2022-02-03 電子ビームシステム及び方法

Publications (2)

Publication Number Publication Date
JP2020518990A true JP2020518990A (ja) 2020-06-25
JP2020518990A5 JP2020518990A5 (enExample) 2021-02-18

Family

ID=64014281

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2019560662A Pending JP2020518990A (ja) 2017-05-05 2018-01-12 マルチビームカラムにおけるクーロン相互作用の低減
JP2022015515A Active JP7329637B2 (ja) 2017-05-05 2022-02-03 電子ビームシステム及び方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2022015515A Active JP7329637B2 (ja) 2017-05-05 2022-02-03 電子ビームシステム及び方法

Country Status (7)

Country Link
US (1) US10242839B2 (enExample)
EP (1) EP3549154A4 (enExample)
JP (2) JP2020518990A (enExample)
KR (1) KR102352097B1 (enExample)
CN (1) CN110313048B (enExample)
IL (1) IL267815B (enExample)
WO (1) WO2018203936A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
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JP2022069399A (ja) * 2020-10-23 2022-05-11 株式会社ニューフレアテクノロジー ショットキー熱電界放出（ｔｆｅ）源と一体化されたビームスプリッタ、ショットキー熱電界放出（ｔｆｅ）源とビームスプリッタの一体化方法、及びマルチビーム形成方法

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US11615938B2 (en) * 2019-12-20 2023-03-28 Nuflare Technology, Inc. High-resolution multiple beam source
JP7503635B2 (ja) 2020-01-06 2024-06-20 エーエスエムエル ネザーランズ ビー．ブイ． 荷電粒子評価ツール、検査方法
US12451319B2 (en) 2020-10-05 2025-10-21 Kla Corporation Electron source with magnetic suppressor electrode
US11869743B2 (en) * 2021-05-11 2024-01-09 Kla Corporation High throughput multi-electron beam system
US11651934B2 (en) 2021-09-30 2023-05-16 Kla Corporation Systems and methods of creating multiple electron beams

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JP2009545118A (ja) * 2006-07-25 2009-12-17 マッパー・リソグラフィー・アイピー・ビー．ブイ． マルチビーム荷電粒子光学システム
JP2010506374A (ja) * 2006-10-11 2010-02-25 シーイービーティー・カンパニー・リミティッド 永久磁石を有する磁気レンズ層を用いた電子カラム
JP2011059057A (ja) * 2009-09-14 2011-03-24 Fujitsu Ltd 電子スピン分析器及び表面観察装置
US20150155134A1 (en) * 2013-12-02 2015-06-04 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik GmbH Multi-beam system for high throughput ebi

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JP4647820B2 (ja) * 2001-04-23 2011-03-09 キヤノン株式会社 荷電粒子線描画装置、および、デバイスの製造方法
JP2003077814A (ja) * 2001-09-05 2003-03-14 Nikon Corp 荷電粒子線露光装置の結像性能の計測方法及びその計測装置、荷電粒子線露光装置
US6768125B2 (en) * 2002-01-17 2004-07-27 Ims Nanofabrication, Gmbh Maskless particle-beam system for exposing a pattern on a substrate
EP1556881B1 (en) * 2002-10-30 2013-08-28 Mapper Lithography Ip B.V. Electron beam exposure system
JP4459568B2 (ja) * 2003-08-06 2010-04-28 キヤノン株式会社 マルチ荷電ビームレンズおよびそれを用いた荷電ビーム露光装置
GB2408143B (en) * 2003-10-20 2006-11-15 Ims Nanofabrication Gmbh Charged-particle multi-beam exposure apparatus
US7176459B2 (en) 2003-12-25 2007-02-13 Ebara Corporation Electron beam apparatus
KR101099487B1 (ko) * 2004-05-17 2011-12-28 마퍼 리쏘그라피 아이피 비.브이. 대전 입자 빔 노광 시스템
EP2270833A3 (en) * 2005-09-06 2011-01-26 Carl Zeiss SMT AG Particle-optical component
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US9922799B2 (en) * 2015-07-21 2018-03-20 Hermes Microvision, Inc. Apparatus of plural charged-particle beams
CN108738363B (zh) 2015-07-22 2020-08-07 Asml荷兰有限公司 多个带电粒子束的装置

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JP2009545118A (ja) * 2006-07-25 2009-12-17 マッパー・リソグラフィー・アイピー・ビー．ブイ． マルチビーム荷電粒子光学システム
JP2010506374A (ja) * 2006-10-11 2010-02-25 シーイービーティー・カンパニー・リミティッド 永久磁石を有する磁気レンズ層を用いた電子カラム
JP2011059057A (ja) * 2009-09-14 2011-03-24 Fujitsu Ltd 電子スピン分析器及び表面観察装置
US20150155134A1 (en) * 2013-12-02 2015-06-04 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik GmbH Multi-beam system for high throughput ebi

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2022069399A (ja) * 2020-10-23 2022-05-11 株式会社ニューフレアテクノロジー ショットキー熱電界放出（ｔｆｅ）源と一体化されたビームスプリッタ、ショットキー熱電界放出（ｔｆｅ）源とビームスプリッタの一体化方法、及びマルチビーム形成方法
JP7659480B2 (ja) 2020-10-23 2025-04-09 株式会社ニューフレアテクノロジー ショットキー熱電界放出（ｔｆｅ）源と一体化されたビームスプリッタ、ショットキー熱電界放出（ｔｆｅ）源とビームスプリッタの一体化方法、及びマルチビーム形成方法

Also Published As

Publication number Publication date
WO2018203936A1 (en) 2018-11-08
IL267815B (en) 2022-08-01
US10242839B2 (en) 2019-03-26
KR20190138898A (ko) 2019-12-16
CN110313048B (zh) 2021-03-12
JP7329637B2 (ja) 2023-08-18
IL267815A (en) 2019-09-26
CN110313048A (zh) 2019-10-08
EP3549154A4 (en) 2020-07-22
KR102352097B1 (ko) 2022-01-14
US20180323034A1 (en) 2018-11-08
EP3549154A1 (en) 2019-10-09
JP2022058874A (ja) 2022-04-12

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