JP2020515001A5 - - Google Patents
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- JP2020515001A5 JP2020515001A5 JP2019548676A JP2019548676A JP2020515001A5 JP 2020515001 A5 JP2020515001 A5 JP 2020515001A5 JP 2019548676 A JP2019548676 A JP 2019548676A JP 2019548676 A JP2019548676 A JP 2019548676A JP 2020515001 A5 JP2020515001 A5 JP 2020515001A5
- Authority
- JP
- Japan
- Prior art keywords
- power
- frequency
- pulse output
- high frequency
- phase
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000000034 method Methods 0.000 description 7
- 239000000758 substrate Substances 0.000 description 2
- 230000003111 delayed effect Effects 0.000 description 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US15/457,798 US10424467B2 (en) | 2017-03-13 | 2017-03-13 | Smart RF pulsing tuning using variable frequency generators |
| US15/457,798 | 2017-03-13 | ||
| PCT/US2018/017980 WO2018169631A1 (en) | 2017-03-13 | 2018-02-13 | Smart rf pulsing tuning using variable frequency generators |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2020515001A JP2020515001A (ja) | 2020-05-21 |
| JP2020515001A5 true JP2020515001A5 (https=) | 2021-03-04 |
| JP7025440B2 JP7025440B2 (ja) | 2022-02-24 |
Family
ID=63445030
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2019548676A Active JP7025440B2 (ja) | 2017-03-13 | 2018-02-13 | 可変周波数発生器を用いるスマート高周波パルス調整 |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US10424467B2 (https=) |
| JP (1) | JP7025440B2 (https=) |
| KR (1) | KR102467354B1 (https=) |
| CN (1) | CN110313049B (https=) |
| TW (1) | TWI764988B (https=) |
| WO (1) | WO2018169631A1 (https=) |
Families Citing this family (32)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10424467B2 (en) * | 2017-03-13 | 2019-09-24 | Applied Materials, Inc. | Smart RF pulsing tuning using variable frequency generators |
| US10879044B2 (en) * | 2017-04-07 | 2020-12-29 | Lam Research Corporation | Auxiliary circuit in RF matching network for frequency tuning assisted dual-level pulsing |
| CN109148250B (zh) * | 2017-06-15 | 2020-07-17 | 北京北方华创微电子装备有限公司 | 阻抗匹配装置和阻抗匹配方法 |
| US10510512B2 (en) * | 2018-01-25 | 2019-12-17 | Tokyo Electron Limited | Methods and systems for controlling plasma performance |
| CN110416047B (zh) * | 2018-04-27 | 2021-03-02 | 北京北方华创微电子装备有限公司 | 射频阻抗匹配的方法及装置、半导体处理设备 |
| US10854427B2 (en) | 2018-08-30 | 2020-12-01 | Applied Materials, Inc. | Radio frequency (RF) pulsing impedance tuning with multiplier mode |
| WO2020068107A1 (en) * | 2018-09-28 | 2020-04-02 | Lam Research Corporation | Systems and methods for optimizing power delivery to an electrode of a plasma chamber |
| CN114041201B (zh) * | 2019-04-29 | 2024-12-06 | 朗姆研究公司 | 用于rf等离子体工具中的多级脉冲的系统和方法 |
| CN111916327B (zh) * | 2019-05-10 | 2023-04-28 | 中微半导体设备(上海)股份有限公司 | 多频率多阶段的等离子体射频输出的方法及其装置 |
| WO2020231881A1 (en) * | 2019-05-10 | 2020-11-19 | Lam Research Corporation | Method and system for automated frequency tuning of radiofrequency (rf) signal generator for multi-level rf power pulsing |
| US11295937B2 (en) * | 2019-09-17 | 2022-04-05 | Tokyo Electron Limited | Broadband plasma processing systems and methods |
| US11545341B2 (en) | 2019-10-02 | 2023-01-03 | Samsung Electronics Co., Ltd. | Plasma etching method and semiconductor device fabrication method including the same |
| KR102429080B1 (ko) * | 2019-12-17 | 2022-08-03 | 주식회사 히타치하이테크 | 플라스마 처리 장치 및 플라스마 처리 장치의 운전 방법 |
| US11158516B2 (en) | 2020-02-07 | 2021-10-26 | Tokyo Electron Limited | Plasma processing methods using low frequency bias pulses |
| US12266505B2 (en) | 2020-02-27 | 2025-04-01 | Lam Research Corporation | Systems and methods for using binning to increase power during a low frequency cycle |
| TWI906346B (zh) * | 2020-08-31 | 2025-12-01 | 日商東京威力科創股份有限公司 | 電漿處理裝置及電漿處理方法 |
| JP7840318B2 (ja) * | 2020-09-01 | 2026-04-03 | ラム リサーチ コーポレーション | ウエハベベルエッジのプラズマ処理におけるアーキングの低減 |
| JP7479255B2 (ja) * | 2020-09-14 | 2024-05-08 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| CN114188204B (zh) * | 2020-09-14 | 2023-10-31 | 中微半导体设备(上海)股份有限公司 | 一种等离子体处理方法、射频发生器以及装置 |
| JP7479256B2 (ja) * | 2020-09-15 | 2024-05-08 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| KR102925565B1 (ko) | 2021-02-18 | 2026-02-10 | 삼성전자주식회사 | 양면 냉각 방식을 활용한 가변 주파수 비정현파 전원 장치 및 이를 포함하는 플라즈마 처리 장치 |
| EP4105963A1 (en) * | 2021-06-17 | 2022-12-21 | Impedans Ltd | A controller for a matching unit of a plasma processing system |
| JPWO2023286715A1 (https=) * | 2021-07-14 | 2023-01-19 | ||
| JP2025512791A (ja) * | 2022-03-30 | 2025-04-22 | ラム リサーチ コーポレーション | パワーリミッタを制御するシステムおよび方法 |
| US12046449B2 (en) * | 2022-04-22 | 2024-07-23 | Applied Materials, Inc. | Methods and apparatus for processing a substrate |
| US20240162008A1 (en) * | 2022-11-16 | 2024-05-16 | Applied Materials, Inc. | Methods and apparatus for processing a substrate |
| EP4618135A1 (en) * | 2022-11-22 | 2025-09-17 | Tokyo Electron Limited | Plasma processing device, power supply system, and method for controlling source frequency |
| TW202442033A (zh) * | 2022-11-30 | 2024-10-16 | 日商東京威力科創股份有限公司 | 電漿處理裝置、電源系統及頻率控制方法 |
| US12567562B2 (en) * | 2022-12-21 | 2026-03-03 | Advanced Energy Industries, Inc. | Compensation of impedance modulation in a plasma generator by frequency sweep |
| US20250191884A1 (en) * | 2023-12-11 | 2025-06-12 | Applied Materials, Inc. | Pulsed voltage waveform biasing of plasma |
| WO2025178805A1 (en) * | 2024-02-22 | 2025-08-28 | Lam Research Corpration | Systems and methods for achieving process rate uniformity by identifying one or more bins |
| WO2025203672A1 (ja) * | 2024-03-29 | 2025-10-02 | 株式会社ダイヘン | 高周波電力供給システム |
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| US5195045A (en) * | 1991-02-27 | 1993-03-16 | Astec America, Inc. | Automatic impedance matching apparatus and method |
| US7838430B2 (en) * | 2003-10-28 | 2010-11-23 | Applied Materials, Inc. | Plasma control using dual cathode frequency mixing |
| JP4707403B2 (ja) | 2005-02-02 | 2011-06-22 | 株式会社アルバック | パルス分割供給によるプラズマ処理方法及び装置並びにプラズマｃｖｄ方法 |
| JP4660498B2 (ja) * | 2007-03-27 | 2011-03-30 | 株式会社東芝 | 基板のプラズマ処理装置 |
| FR2928240B1 (fr) | 2008-02-28 | 2016-10-28 | Renault Sas | Optimisation de la frequence d'excitation d'une bougie radiofrequence. |
| KR101528528B1 (ko) * | 2008-05-14 | 2015-06-12 | 어플라이드 머티어리얼스, 인코포레이티드 | Ｒｆ 전력 전달을 위한 시간 분해된 조정 방식을 이용하는 펄스화된 플라즈마 처리를 위한 방법 및 장치 |
| US8357264B2 (en) | 2008-05-29 | 2013-01-22 | Applied Materials, Inc. | Plasma reactor with plasma load impedance tuning for engineered transients by synchronized modulation of a source power or bias power RF generator |
| US8018164B2 (en) | 2008-05-29 | 2011-09-13 | Applied Materials, Inc. | Plasma reactor with high speed plasma load impedance tuning by modulation of different unmatched frequency sources |
| US7967944B2 (en) | 2008-05-29 | 2011-06-28 | Applied Materials, Inc. | Method of plasma load impedance tuning by modulation of an unmatched low power RF generator |
| US8337661B2 (en) | 2008-05-29 | 2012-12-25 | Applied Materials, Inc. | Plasma reactor with plasma load impedance tuning for engineered transients by synchronized modulation of an unmatched low power RF generator |
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| US8324525B2 (en) | 2008-05-29 | 2012-12-04 | Applied Materials, Inc. | Method of plasma load impedance tuning for engineered transients by synchronized modulation of a source power or bias power RF generator |
| JP5395491B2 (ja) * | 2009-03-31 | 2014-01-22 | 東京エレクトロン株式会社 | 基板処理装置及び基板処理方法 |
| US8404598B2 (en) | 2009-08-07 | 2013-03-26 | Applied Materials, Inc. | Synchronized radio frequency pulsing for plasma etching |
| JP5977509B2 (ja) | 2011-12-09 | 2016-08-24 | 東京エレクトロン株式会社 | プラズマ処理方法及びプラズマ処理装置 |
| JP5808012B2 (ja) | 2011-12-27 | 2015-11-10 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| US9390893B2 (en) * | 2012-02-22 | 2016-07-12 | Lam Research Corporation | Sub-pulsing during a state |
| US9881772B2 (en) | 2012-03-28 | 2018-01-30 | Lam Research Corporation | Multi-radiofrequency impedance control for plasma uniformity tuning |
| JP5841917B2 (ja) * | 2012-08-24 | 2016-01-13 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置及びプラズマ処理方法 |
| KR101909571B1 (ko) * | 2012-08-28 | 2018-10-19 | 어드밴스드 에너지 인더스트리즈 인코포레이티드 | 넓은 다이내믹 레인지 이온 에너지 바이어스 제어； 고속 이온 에너지 스위칭； 이온 에너지 제어와 펄스동작 바이어스 서플라이； 및 가상 전면 패널 |
| CN103730316B (zh) | 2012-10-16 | 2016-04-06 | 中微半导体设备(上海)有限公司 | 一种等离子处理方法及等离子处理装置 |
| US9299574B2 (en) * | 2013-01-25 | 2016-03-29 | Applied Materials, Inc. | Silicon dioxide-polysilicon multi-layered stack etching with plasma etch chamber employing non-corrosive etchants |
| JP6568050B2 (ja) * | 2013-03-13 | 2019-08-28 | ラドム コーポレイションＲａｄｏｍ Ｃｏｒｐｏｒａｔｉｏｎ | 誘電体共振器を使用するマイクロ波プラズマ分光計 |
| US9269587B2 (en) * | 2013-09-06 | 2016-02-23 | Applied Materials, Inc. | Methods for etching materials using synchronized RF pulses |
| US9318304B2 (en) | 2013-11-11 | 2016-04-19 | Applied Materials, Inc. | Frequency tuning for dual level radio frequency (RF) pulsing |
| JP6512962B2 (ja) * | 2014-09-17 | 2019-05-15 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| KR101677748B1 (ko) * | 2014-10-29 | 2016-11-29 | 삼성전자 주식회사 | 펄스 플라즈마 장치 및 펄스 플라즈마 장치 구동 방법 |
| US9922806B2 (en) * | 2015-06-23 | 2018-03-20 | Tokyo Electron Limited | Etching method and plasma processing apparatus |
| US9754767B2 (en) * | 2015-10-13 | 2017-09-05 | Applied Materials, Inc. | RF pulse reflection reduction for processing substrates |
| US9614524B1 (en) * | 2015-11-28 | 2017-04-04 | Applied Materials, Inc. | Automatic impedance tuning with RF dual level pulsing |
| US10424467B2 (en) * | 2017-03-13 | 2019-09-24 | Applied Materials, Inc. | Smart RF pulsing tuning using variable frequency generators |
| US10790153B2 (en) * | 2018-06-29 | 2020-09-29 | Applied Materials, Inc. | Methods and apparatus for electron beam etching process |
| US10854427B2 (en) * | 2018-08-30 | 2020-12-01 | Applied Materials, Inc. | Radio frequency (RF) pulsing impedance tuning with multiplier mode |
-
2017
- 2017-03-13 US US15/457,798 patent/US10424467B2/en active Active
-
2018
- 2018-02-13 WO PCT/US2018/017980 patent/WO2018169631A1/en not_active Ceased
- 2018-02-13 KR KR1020197028769A patent/KR102467354B1/ko active Active
- 2018-02-13 CN CN201880012503.7A patent/CN110313049B/zh active Active
- 2018-02-13 JP JP2019548676A patent/JP7025440B2/ja active Active
- 2018-02-21 TW TW107105704A patent/TWI764988B/zh active
-
2019
- 2019-08-06 US US16/533,211 patent/US10790126B2/en active Active
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