TWI764988B - 利用變頻產生器的智慧rf脈衝調整 - Google Patents

利用變頻產生器的智慧rf脈衝調整 Download PDF

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Publication number
TWI764988B
TWI764988B TW107105704A TW107105704A TWI764988B TW I764988 B TWI764988 B TW I764988B TW 107105704 A TW107105704 A TW 107105704A TW 107105704 A TW107105704 A TW 107105704A TW I764988 B TWI764988 B TW I764988B
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Taiwan
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power
frequency
generator
generators
duty cycle
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TW107105704A
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English (en)
Chinese (zh)
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TW201843694A (zh
Inventor
川崎勝正
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美商應用材料股份有限公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/3299—Feedback systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H01J37/32183—Matching circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32128—Radio frequency generated discharge using particular waveforms, e.g. polarised waves
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32146—Amplitude modulation, includes pulsing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0604—Process monitoring, e.g. flow or thickness monitoring

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
TW107105704A 2017-03-13 2018-02-21 利用變頻產生器的智慧rf脈衝調整 TWI764988B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US15/457,798 US10424467B2 (en) 2017-03-13 2017-03-13 Smart RF pulsing tuning using variable frequency generators
US15/457,798 2017-03-13

Publications (2)

Publication Number Publication Date
TW201843694A TW201843694A (zh) 2018-12-16
TWI764988B true TWI764988B (zh) 2022-05-21

Family

ID=63445030

Family Applications (1)

Application Number Title Priority Date Filing Date
TW107105704A TWI764988B (zh) 2017-03-13 2018-02-21 利用變頻產生器的智慧rf脈衝調整

Country Status (6)

Country Link
US (2) US10424467B2 (https=)
JP (1) JP7025440B2 (https=)
KR (1) KR102467354B1 (https=)
CN (1) CN110313049B (https=)
TW (1) TWI764988B (https=)
WO (1) WO2018169631A1 (https=)

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10424467B2 (en) 2017-03-13 2019-09-24 Applied Materials, Inc. Smart RF pulsing tuning using variable frequency generators
US10879044B2 (en) * 2017-04-07 2020-12-29 Lam Research Corporation Auxiliary circuit in RF matching network for frequency tuning assisted dual-level pulsing
CN109148250B (zh) * 2017-06-15 2020-07-17 北京北方华创微电子装备有限公司 阻抗匹配装置和阻抗匹配方法
US10510512B2 (en) * 2018-01-25 2019-12-17 Tokyo Electron Limited Methods and systems for controlling plasma performance
CN110416047B (zh) * 2018-04-27 2021-03-02 北京北方华创微电子装备有限公司 射频阻抗匹配的方法及装置、半导体处理设备
US10854427B2 (en) 2018-08-30 2020-12-01 Applied Materials, Inc. Radio frequency (RF) pulsing impedance tuning with multiplier mode
WO2020068107A1 (en) * 2018-09-28 2020-04-02 Lam Research Corporation Systems and methods for optimizing power delivery to an electrode of a plasma chamber
CN114041201B (zh) * 2019-04-29 2024-12-06 朗姆研究公司 用于rf等离子体工具中的多级脉冲的系统和方法
KR20250138825A (ko) * 2019-05-10 2025-09-22 램 리써치 코포레이션 멀티-레벨 RF (Radiofrequency) 전력 펄싱을 위한 RF 신호 생성기의 자동화된 주파수 튜닝 방법 및 시스템
CN111916327B (zh) * 2019-05-10 2023-04-28 中微半导体设备(上海)股份有限公司 多频率多阶段的等离子体射频输出的方法及其装置
US11295937B2 (en) * 2019-09-17 2022-04-05 Tokyo Electron Limited Broadband plasma processing systems and methods
US11545341B2 (en) 2019-10-02 2023-01-03 Samsung Electronics Co., Ltd. Plasma etching method and semiconductor device fabrication method including the same
CN113272939B (zh) * 2019-12-17 2023-11-14 株式会社日立高新技术 等离子体处理装置以及等离子体处理装置的工作方法
US11158516B2 (en) 2020-02-07 2021-10-26 Tokyo Electron Limited Plasma processing methods using low frequency bias pulses
WO2021173334A1 (en) * 2020-02-27 2021-09-02 Lam Research Corporation Systems and methods for using binning to increase power during a low frequency cycle
TWI906346B (zh) * 2020-08-31 2025-12-01 日商東京威力科創股份有限公司 電漿處理裝置及電漿處理方法
WO2022051073A1 (en) 2020-09-01 2022-03-10 Lam Research Corporation Arcing reduction in wafer bevel edge plasma processing
CN114188204B (zh) * 2020-09-14 2023-10-31 中微半导体设备(上海)股份有限公司 一种等离子体处理方法、射频发生器以及装置
JP7479255B2 (ja) * 2020-09-14 2024-05-08 東京エレクトロン株式会社 プラズマ処理装置
JP7479256B2 (ja) * 2020-09-15 2024-05-08 東京エレクトロン株式会社 プラズマ処理装置
KR102925565B1 (ko) 2021-02-18 2026-02-10 삼성전자주식회사 양면 냉각 방식을 활용한 가변 주파수 비정현파 전원 장치 및 이를 포함하는 플라즈마 처리 장치
EP4105963A1 (en) * 2021-06-17 2022-12-21 Impedans Ltd A controller for a matching unit of a plasma processing system
WO2023286715A1 (ja) * 2021-07-14 2023-01-19 東京エレクトロン株式会社 プラズマ処理方法およびプラズマ処理装置
US20250210309A1 (en) * 2022-03-30 2025-06-26 Lam Research Corporation Systems and methods for controlling a power limiter
US12046449B2 (en) * 2022-04-22 2024-07-23 Applied Materials, Inc. Methods and apparatus for processing a substrate
US20240162008A1 (en) * 2022-11-16 2024-05-16 Applied Materials, Inc. Methods and apparatus for processing a substrate
EP4618135A1 (en) * 2022-11-22 2025-09-17 Tokyo Electron Limited Plasma processing device, power supply system, and method for controlling source frequency
TW202442033A (zh) * 2022-11-30 2024-10-16 日商東京威力科創股份有限公司 電漿處理裝置、電源系統及頻率控制方法
US12567562B2 (en) * 2022-12-21 2026-03-03 Advanced Energy Industries, Inc. Compensation of impedance modulation in a plasma generator by frequency sweep
US20250191884A1 (en) * 2023-12-11 2025-06-12 Applied Materials, Inc. Pulsed voltage waveform biasing of plasma
WO2025178805A1 (en) * 2024-02-22 2025-08-28 Lam Research Corpration Systems and methods for achieving process rate uniformity by identifying one or more bins
WO2025203672A1 (ja) * 2024-03-29 2025-10-02 株式会社ダイヘン 高周波電力供給システム

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5195045A (en) * 1991-02-27 1993-03-16 Astec America, Inc. Automatic impedance matching apparatus and method
US20140106572A1 (en) * 2012-10-16 2014-04-17 Advanced Micro-Fabrication Equipment Inc, Shanghai Plasma processing method and plasma processing device
TW201419371A (zh) * 2012-08-28 2014-05-16 Advanced Energy Ind Inc 廣動態範圍離子能量偏壓控制；快速離子能量切換；離子能量控制與脈波式偏壓供應；以及虛擬前面板
US9390893B2 (en) * 2012-02-22 2016-07-12 Lam Research Corporation Sub-pulsing during a state

Family Cites Families (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7838430B2 (en) * 2003-10-28 2010-11-23 Applied Materials, Inc. Plasma control using dual cathode frequency mixing
JP4707403B2 (ja) 2005-02-02 2011-06-22 株式会社アルバック パルス分割供給によるプラズマ処理方法及び装置並びにプラズマｃｖｄ方法
JP4660498B2 (ja) * 2007-03-27 2011-03-30 株式会社東芝 基板のプラズマ処理装置
FR2928240B1 (fr) 2008-02-28 2016-10-28 Renault Sas Optimisation de la frequence d'excitation d'une bougie radiofrequence.
JP2011525682A (ja) 2008-05-14 2011-09-22 アプライド マテリアルズ インコーポレイテッド Ｒｆ電力供給のための時間分解チューニングスキームを利用したパルス化プラズマ処理の方法及び装置
US7967944B2 (en) 2008-05-29 2011-06-28 Applied Materials, Inc. Method of plasma load impedance tuning by modulation of an unmatched low power RF generator
US8324525B2 (en) 2008-05-29 2012-12-04 Applied Materials, Inc. Method of plasma load impedance tuning for engineered transients by synchronized modulation of a source power or bias power RF generator
US8018164B2 (en) 2008-05-29 2011-09-13 Applied Materials, Inc. Plasma reactor with high speed plasma load impedance tuning by modulation of different unmatched frequency sources
US8002945B2 (en) 2008-05-29 2011-08-23 Applied Materials, Inc. Method of plasma load impedance tuning for engineered transients by synchronized modulation of an unmatched low power RF generator
US8357264B2 (en) 2008-05-29 2013-01-22 Applied Materials, Inc. Plasma reactor with plasma load impedance tuning for engineered transients by synchronized modulation of a source power or bias power RF generator
US8337661B2 (en) 2008-05-29 2012-12-25 Applied Materials, Inc. Plasma reactor with plasma load impedance tuning for engineered transients by synchronized modulation of an unmatched low power RF generator
JP5395491B2 (ja) 2009-03-31 2014-01-22 東京エレクトロン株式会社 基板処理装置及び基板処理方法
US8404598B2 (en) 2009-08-07 2013-03-26 Applied Materials, Inc. Synchronized radio frequency pulsing for plasma etching
JP5977509B2 (ja) 2011-12-09 2016-08-24 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
JP5808012B2 (ja) 2011-12-27 2015-11-10 東京エレクトロン株式会社 プラズマ処理装置
US9881772B2 (en) 2012-03-28 2018-01-30 Lam Research Corporation Multi-radiofrequency impedance control for plasma uniformity tuning
JP5841917B2 (ja) * 2012-08-24 2016-01-13 株式会社日立ハイテクノロジーズ プラズマ処理装置及びプラズマ処理方法
US9299574B2 (en) * 2013-01-25 2016-03-29 Applied Materials, Inc. Silicon dioxide-polysilicon multi-layered stack etching with plasma etch chamber employing non-corrosive etchants
CN105122951B (zh) * 2013-03-13 2018-05-04 拉多姆公司 使用介质谐振器的等离子体发生器
US9269587B2 (en) * 2013-09-06 2016-02-23 Applied Materials, Inc. Methods for etching materials using synchronized RF pulses
US9318304B2 (en) 2013-11-11 2016-04-19 Applied Materials, Inc. Frequency tuning for dual level radio frequency (RF) pulsing
JP6512962B2 (ja) * 2014-09-17 2019-05-15 東京エレクトロン株式会社 プラズマ処理装置
KR101677748B1 (ko) * 2014-10-29 2016-11-29 삼성전자 주식회사 펄스 플라즈마 장치 및 펄스 플라즈마 장치 구동 방법
US9922806B2 (en) * 2015-06-23 2018-03-20 Tokyo Electron Limited Etching method and plasma processing apparatus
US9754767B2 (en) * 2015-10-13 2017-09-05 Applied Materials, Inc. RF pulse reflection reduction for processing substrates
US9614524B1 (en) * 2015-11-28 2017-04-04 Applied Materials, Inc. Automatic impedance tuning with RF dual level pulsing
US10424467B2 (en) * 2017-03-13 2019-09-24 Applied Materials, Inc. Smart RF pulsing tuning using variable frequency generators
US10790153B2 (en) * 2018-06-29 2020-09-29 Applied Materials, Inc. Methods and apparatus for electron beam etching process
US10854427B2 (en) * 2018-08-30 2020-12-01 Applied Materials, Inc. Radio frequency (RF) pulsing impedance tuning with multiplier mode

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5195045A (en) * 1991-02-27 1993-03-16 Astec America, Inc. Automatic impedance matching apparatus and method
US9390893B2 (en) * 2012-02-22 2016-07-12 Lam Research Corporation Sub-pulsing during a state
US20160276137A1 (en) * 2012-02-22 2016-09-22 Lam Research Corporation Sub-pulsing during a state
TW201419371A (zh) * 2012-08-28 2014-05-16 Advanced Energy Ind Inc 廣動態範圍離子能量偏壓控制；快速離子能量切換；離子能量控制與脈波式偏壓供應；以及虛擬前面板
US20140106572A1 (en) * 2012-10-16 2014-04-17 Advanced Micro-Fabrication Equipment Inc, Shanghai Plasma processing method and plasma processing device

Also Published As

Publication number Publication date
CN110313049B (zh) 2022-02-01
JP2020515001A (ja) 2020-05-21
KR102467354B1 (ko) 2022-11-14
CN110313049A (zh) 2019-10-08
US20180261430A1 (en) 2018-09-13
US20190362941A1 (en) 2019-11-28
TW201843694A (zh) 2018-12-16
US10424467B2 (en) 2019-09-24
KR20190120343A (ko) 2019-10-23
JP7025440B2 (ja) 2022-02-24
US10790126B2 (en) 2020-09-29
WO2018169631A1 (en) 2018-09-20

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