JP2020512691A - 高い腐食性又は浸食性の半導体処理用途に使用するためのセラミック材料アセンブリ - Google Patents

高い腐食性又は浸食性の半導体処理用途に使用するためのセラミック材料アセンブリ Download PDF

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JP2020512691A
JP2020512691A JP2019552095A JP2019552095A JP2020512691A JP 2020512691 A JP2020512691 A JP 2020512691A JP 2019552095 A JP2019552095 A JP 2019552095A JP 2019552095 A JP2019552095 A JP 2019552095A JP 2020512691 A JP2020512691 A JP 2020512691A
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processing chamber
semiconductor processing
chamber component
sapphire
aluminum
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JP2020512691A5 (https=
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ブレント エリオット
ブレント エリオット
デニス レックス
デニス レックス
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コンポーネント リ−エンジニアリング カンパニー インコーポレイテッド
コンポーネント リ−エンジニアリング カンパニー インコーポレイテッド
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    • H—ELECTRICITY
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    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
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    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
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    • B23K1/00—Soldering, e.g. brazing, or unsoldering
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    • B23K1/00—Soldering, e.g. brazing, or unsoldering
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
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  • Drying Of Semiconductors (AREA)
JP2019552095A 2017-03-21 2018-03-21 高い腐食性又は浸食性の半導体処理用途に使用するためのセラミック材料アセンブリ Pending JP2020512691A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201762474597P 2017-03-21 2017-03-21
US62/474,597 2017-03-21
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