JP2020504230A - フレキシブル基板を被覆するための堆積装置、フレキシブル基板を被覆する方法、及び被覆を有するフレキシブル基板 - Google Patents
フレキシブル基板を被覆するための堆積装置、フレキシブル基板を被覆する方法、及び被覆を有するフレキシブル基板 Download PDFInfo
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- 230000008021 deposition Effects 0.000 title claims abstract description 258
- 239000000758 substrate Substances 0.000 title claims abstract description 214
- 238000000576 coating method Methods 0.000 title claims abstract description 138
- 239000011248 coating agent Substances 0.000 title claims abstract description 136
- 238000000034 method Methods 0.000 title claims description 49
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 75
- 229910002804 graphite Inorganic materials 0.000 claims abstract description 24
- 239000010439 graphite Substances 0.000 claims abstract description 24
- 238000003860 storage Methods 0.000 claims abstract description 24
- 238000004804 winding Methods 0.000 claims abstract description 13
- 238000000151 deposition Methods 0.000 claims description 268
- 229910052799 carbon Inorganic materials 0.000 claims description 51
- 238000004544 sputter deposition Methods 0.000 claims description 24
- 238000012546 transfer Methods 0.000 claims description 11
- 239000004020 conductor Substances 0.000 claims description 6
- 239000012811 non-conductive material Substances 0.000 claims description 2
- 238000010586 diagram Methods 0.000 abstract description 7
- 239000000463 material Substances 0.000 description 25
- 239000007789 gas Substances 0.000 description 23
- 238000000926 separation method Methods 0.000 description 14
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 238000012545 processing Methods 0.000 description 7
- 150000002500 ions Chemical class 0.000 description 6
- 230000001681 protective effect Effects 0.000 description 6
- 238000011144 upstream manufacturing Methods 0.000 description 6
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 238000005137 deposition process Methods 0.000 description 3
- 239000003989 dielectric material Substances 0.000 description 3
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- 238000007789 sealing Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 238000001771 vacuum deposition Methods 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 description 2
- 239000011888 foil Substances 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
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- 238000010849 ion bombardment Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 238000005546 reactive sputtering Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000002207 thermal evaporation Methods 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- WYTGDNHDOZPMIW-RCBQFDQVSA-N alstonine Natural products C1=CC2=C3C=CC=CC3=NC2=C2N1C[C@H]1[C@H](C)OC=C(C(=O)OC)[C@H]1C2 WYTGDNHDOZPMIW-RCBQFDQVSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
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- 230000014509 gene expression Effects 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
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- 238000001755 magnetron sputter deposition Methods 0.000 description 1
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- 238000000427 thin-film deposition Methods 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0605—Carbon
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3435—Applying energy to the substrate during sputtering
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/50—Substrate holders
- C23C14/505—Substrate holders for rotation of the substrates
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/562—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks for coating elongated substrates
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
- C23C14/5806—Thermal treatment
- C23C14/582—Thermal treatment using electron bombardment
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
- C23C14/5826—Treatment with charged particles
- C23C14/5833—Ion beam bombardment
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- Organic Chemistry (AREA)
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- Thermal Sciences (AREA)
- Physical Vapour Deposition (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Abstract
Description
Claims (15)
- フレキシブル基板(10)を被覆するための堆積装置(100)であって、
前記フレキシブル基板(10)を提供するためのストレージスプール(112)を格納する第1のスプールチャンバ(110)と、
前記第1のスプールチャンバ(110)の下流に配置された堆積チャンバ(120)と、
前記堆積チャンバ(120)の下流に配置され、堆積後に前記フレキシブル基板(10)を巻くための巻き取りスプール(152)を格納する第2のスプールチャンバ(150)とを備え、
前記堆積チャンバ(120)は、少なくとも1つのグラファイトターゲット(125)付き堆積ユニット(124)を含む複数の堆積ユニット(121)を通って、前記フレキシブル基板を誘導するための被覆ドラム(122)を備え、
前記被覆ドラムは、前記被覆ドラムに電位を印加するためのデバイス(140)に接続されている、堆積装置(100)。 - 電位は1kHz〜100kHzの周波数を有する中周波電位である、請求項1に記載の堆積装置。
- 前記少なくとも1つの堆積ユニット(124)は直流スパッタ堆積ユニットである、請求項1又は2に記載の堆積装置。
- 前記少なくとも1つの堆積ユニット(124)はパルス式直流スパッタ堆積ユニットである、請求項1又は2に記載の堆積装置。
- 前記グラファイトターゲット(125)は平面ターゲットである、請求項1から4のいずれか一項に記載の堆積装置。
- 前記グラファイトターゲット(125)が回転式ターゲットである、請求項1から4のいずれか一項に記載の堆積装置。
- 前記複数の堆積ユニット(121)は、前記フレキシブル基板(10)に導電性材料を堆積するように構成された少なくとも1つの直流スパッタ源(612)を備え、及び/又は、前記複数の堆積ユニットは、前記フレキシブル基板(10)に非導電性材料を堆積するための少なくとも1つのACスパッタ源(610)を備える、請求項1から6のいずれか一項に記載の堆積装置。
- 前記被覆ドラム(122)は回転軸(123)の周りに回転可能であり、前記被覆ドラム(122)は前記フレキシブル基板(10)に接触するための湾曲した基板支持面を備え、前記湾曲した基板支持面は導電性である、請求項1から7のいずれか一項に記載の堆積装置。
- 前記第1のスプールチャンバから前記第2のスプールチャンバまで、部分的に凸状で部分的に凹状の基板移送経路に沿って、前記フレキシブル基板を移送するように構成されたローラアセンブリを更に備える、請求項1から8のいずれか一項に記載の堆積装置。
- ダイヤモンド様カーボン層を含む積層でフレキシブル基板(10)を被覆するための堆積装置(100)であって、前記装置は、
前記フレキシブル基板(10)を提供するためのストレージスプール(112)を格納する第1のスプールチャンバ(110)と、
前記第1のスプールチャンバ(110)の下流に配置される堆積チャンバ(120)と、
前記堆積チャンバ(120)の下流に配置され、堆積後に前記フレキシブル基板(10)を巻くための巻き取りスプール(152)を格納する第2のスプールチャンバ(150)とを備え、
前記堆積チャンバ(120)は、少なくとも1つのグラファイトターゲット(125)付きスパッタ堆積ユニットを含む複数の堆積ユニット(121)を通って、前記フレキシブル基板を誘導するための被覆ドラム(122)を備え、前記被覆ドラムは、前記被覆ドラムの基板誘導面に電位を印加するように構成されており、その電位は1kHz〜100kHzの周波数を有する中周波電位である、堆積装置(100)。 - カーボン層でフレキシブル基板(10)を被覆する方法であって、
第1のスプールチャンバ(110)に設けられたストレージスプール(112)から前記フレキシブル基板を送り出すこと、
堆積チャンバ(120)に設けられた被覆ドラム(122)を用いて、前記フレキシブル基板を誘導する間に前記フレキシブル基板(10)の上にカーボン層を堆積すること、
前記被覆ドラムに電位を印加すること、及び、
堆積後に第2のスプールチャンバ(150)に設けられた巻き取りスプール(152)に前記フレキシブル基板を巻くこと、を含む方法。 - 前記被覆ドラムに前記電位を印加することは、1kHz〜100kHzの周波数を有する中周波電位を印加することを含む、請求項11に記載の方法。
- 前記カーボン層を堆積することは、グラファイトターゲット付き堆積ユニットを使用することによるスパッタリングを含む、請求項11又は12に記載の方法。
- イオン衝突及び/又は電子衝突を提供することによって、前記カーボン層を高密度化することを更に含む、請求項11から13のいずれか一項に記載の方法。
- 一又は複数の層による被覆を有するフレキシブル基板であって、少なくとも1つの層は、請求項11から14のいずれか一項に記載の方法によって作られるカーボン層、特にダイヤモンド様カーボン層である、フレキシブル基板。
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JP2004244690A (ja) * | 2003-02-14 | 2004-09-02 | Raiku:Kk | スパッタリング成膜方法、成膜製品及びスパッタリング装置の電子流量調節装置 |
US20070128826A1 (en) * | 2005-12-02 | 2007-06-07 | Hon Hai Precision Industry Co., Ltd. | Article with multilayered coating and method for manufacturing same |
JP2009203556A (ja) * | 2001-12-17 | 2009-09-10 | Sumitomo Electric Ind Ltd | 非晶質炭素被膜の製造方法及び非晶質炭素被覆摺動部品 |
WO2013035634A1 (ja) * | 2011-09-07 | 2013-03-14 | ナノテック株式会社 | 炭素膜成膜装置 |
KR20160133029A (ko) * | 2015-05-11 | 2016-11-22 | (주)제너코트 | 그라파이트 방열시트의 제조방법 |
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- 2017-11-28 KR KR1020197000340A patent/KR102213759B1/ko active IP Right Grant
- 2017-11-28 EP EP17804898.9A patent/EP3717673A1/en not_active Withdrawn
- 2017-11-28 CN CN201780053270.0A patent/CN110100040A/zh active Pending
- 2017-11-28 WO PCT/EP2017/080692 patent/WO2019105533A1/en unknown
- 2017-11-28 JP JP2018566409A patent/JP6768087B2/ja not_active Expired - Fee Related
- 2017-11-28 US US16/308,365 patent/US20210222288A1/en not_active Abandoned
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CN110100040A (zh) | 2019-08-06 |
WO2019105533A1 (en) | 2019-06-06 |
TWI713937B (zh) | 2020-12-21 |
KR102213759B1 (ko) | 2021-02-05 |
TW201925500A (zh) | 2019-07-01 |
US20210222288A1 (en) | 2021-07-22 |
EP3717673A1 (en) | 2020-10-07 |
JP6768087B2 (ja) | 2020-10-14 |
KR20190065231A (ko) | 2019-06-11 |
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