JP2020501379A - 相転移電子デバイス - Google Patents
相転移電子デバイス Download PDFInfo
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- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/883—Oxides or nitrides
- H10N70/8836—Complex metal oxides, e.g. perovskites, spinels
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- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/15—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on an electrochromic effect
- G02F1/1514—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on an electrochromic effect characterised by the electrochromic material, e.g. by the electrodeposited material
- G02F1/1523—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on an electrochromic effect characterised by the electrochromic material, e.g. by the electrodeposited material comprising inorganic material
- G02F1/1524—Transition metal compounds
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- G—PHYSICS
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- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
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- G02F1/1523—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on an electrochromic effect characterised by the electrochromic material, e.g. by the electrodeposited material comprising inorganic material
- G02F1/1525—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on an electrochromic effect characterised by the electrochromic material, e.g. by the electrodeposited material comprising inorganic material characterised by a particular ion transporting layer, e.g. electrolyte
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- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
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- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
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- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/24—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies
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- H10N70/821—Device geometry
- H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
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- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
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- H10N70/883—Oxides or nitrides
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/15—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on an electrochromic effect
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Abstract
Description
本出願は、2016年11月23日に出願された「相転移電子デバイス」という第201611047015.9号の中国特許出願の優先権を主張し、その内容をここで援用する。
S100では、構造式ABOxHyを有する水素含有遷移金属酸化物を提供する。前記水素含有遷移金属酸化物は第1相にあり、Aはアルカリ土類金属元素及び希土類金属元素のうちの1つ以上であり、Bは遷移金属元素のうちの1つ以上であり、xの値の範囲は1〜3であり、yの値の範囲は0〜2.5であり、
S200では、前記水素含有遷移金属酸化物を第1イオン液体に浸漬し、
S300では、前記第1イオン液体をゲートとして用い、前記水素含有遷移金属酸化物にゲート電圧を印加して、前記水素含有遷移金属酸化物の相転移を調節制御する。
S110では、構造式ABOzを有する遷移金属酸化物を提供し、zは2以上且つ3以下であり、
S120では、前記遷移金属酸化物を第2イオン液体に浸漬し、
S130では、前記遷移金属酸化物に電界を印加して、前記第2イオン液体中の水素イオンを前記遷移金属酸化物に挿入する。
ステップS110では、Aはアルカリ土類金属及び遷移元素のうちの1つ以上であり、Bは遷移金属元素Co、Cr、Fe、Mn、Ni、Cu、Ti、Zn、Sc、V等のうちの1つ以上である。前記アルカリ土類金属元素は、Be、Mg、Ca、Sr、Baを含む。前記希土類金属元素は、La、Ce、Pr、Nd、Pm、Sm、Eu、Gd、Tb、Dy、Ho、Er、Tm、Ybなどのうちの1つ以上を含む。前記構造式ABOzを有する遷移金属酸化物の構造は限定されず、薄膜、粉末、バルク材料、ナノ粒子、又は他の材料との複合材料であってもよい。一実施例では、前記構造式ABOzを有する遷移金属酸化物は薄膜である。薄膜としての前記遷移金属酸化物を調製する方法は限定されず、様々な方法によって調製することができることが理解され得る。
S112では、基板を提供し、
S114では、構造式ABOzを有する遷移金属酸化物薄膜を前記基板の表面に堆積して形成し、
S116では、前記遷移金属酸化物薄膜の表面に第1電極を形成する。
前記基板は限定されず、セラミック基板、シリコン基板、ガラス基板、金属基板、又はポリマーのうちの1つであってもよい。成膜に使用することができる基板はすべてステップS112に使用することができる。前記構造式ABOzを有する遷移金属酸化物の薄膜を形成する方法は限定されず、例えば、イオンスパッタリング法、化学気相成長法、マグネトロンスパッタリング法、ゲル法、パルスレーザー堆積などの様々な成膜方法であってもよい。一実施例では、前記ステップS114は、パルスレーザー堆積の方法により前記基板上でエピタキシャル成長により前記遷移金属酸化物薄膜を取得する。成長した遷移金属酸化物薄膜の厚さは限定されない。好ましくは、前記遷移金属酸化物薄膜の厚さは5nm〜200nmである。前記ステップS116では、前記第1電極と前記遷移金属酸化物薄膜とを接触させて底部電極を形成する。前記第1電極の位置は、前記遷移金属酸化物薄膜の前記基板に近接する表面であってもよいし、前記遷移金属酸化薄膜の前記基板から離れた表面であってもよい。前記第1電極は、金属又は様々な導電薄膜、さらに前記遷移金属酸化物薄膜自体であってもよい。一実施例では、前記第1電極はITO薄膜である。前記第2イオン液体は、前記第1イオン液体と同じく、様々な種類のイオン液体であってもよい。一実施例では、前記イオン液体はDEME−TFSIである。
S132では、第2電極及び電源を提供し、
S134では、前記第2電極と前記第1電極とを間隔をおいて配置し、それぞれ前記電源に電気的に接続し、
S136では、前記第2電極を前記第2イオン液体に浸漬し、前記電源により前記第2電極から前記第1電極へ向かう電界を印加する。
S310では、前記水素含有遷移金属酸化物が第2相になるように、前記水素含有遷移金属酸化物ABOxHyにゲート負電圧を印加して、前記水素含有遷移金属酸化物に水素イオンを析出させるか又は酸素イオンを添加する。前記第2相の格子体積は前記第1相よりも小さい。
S320では、前記第2相になった水素含有遷移金属酸化物が前記第1相に戻るように、前記第2相になった水素含有遷移金属酸化物にゲート正電圧を印加して、第2相になった水素含有遷移金属酸化物に水素イオンを挿入するか又は酸素イオンを析出させる。
S330では、第3相になるように前記第2相になった水素含有遷移金属酸化物にゲート負電圧を印加して、前記第2相になった水素含有遷移金属酸化物に酸素イオンを挿入するか又は水素イオンを析出させる。前記第3相の格子体積は前記第2相より小さい。
Claims (13)
- 相転移電子デバイスであって、積層して配置された相転移材料層とイオン液体層を含み、前記イオン液体層は、水素イオン及び酸素イオンを提供することができ、前記相転移材料層は、構造式ABOxHyを有する水素含有遷移金属酸化物であり、Aはアルカリ土類金属元素及び希土類金属元素のうちの1つ以上であり、Bは遷移金属元素のうちの1つ以上であり、xの値の範囲は1〜3であり、yの値の範囲は0〜2.5である、ことを特徴とする相転移電子デバイス。
- 前記イオン液体層は、前記相転移材料層を覆う、ことを特徴とする請求項1に記載の相転移電子デバイス。
- 第1導電層を更に含み、前記第1導電層は、前記イオン液体層の前記相転移材料層から離れた表面に積層して配置される、ことを特徴とする請求項1に記載の相転移電子デバイス。
- 前記第1導電層と間隔をおいて配置された第2導電層を更に含み、前記相転移材料層は、前記第1導電層と前記第2導電層との間に配置され、前記第2導電層に接続される、ことを特徴とする請求項3に記載の相転移電子デバイス。
- 絶縁支持体を更に含み、前記絶縁支持体は、前記第1導電層と前記第2導電層との間に配置され、前記第1導電層と前記第2導電層とは、前記絶縁支持体を介して互いに絶縁して配置される、ことを特徴とする請求項4に記載の相転移電子デバイス。
- 第1基板及び第2基板を更に含み、前記第1基板と前記第2基板は、互いに対向し且つ間隔をおいて配置され、前記第1導電層は前記第1基板に配置され、前記第2導電層は前記第2基板に配置される、ことを特徴とする請求項5に記載の相転移電子デバイス。
- 前記第1基板、前記第1導電層、前記第2導電層、及び前記第2基板はいずれも透明材料からなる、ことを特徴とする請求項6に記載の相転移電子デバイス。
- 前記アルカリ土類金属元素はBe、Mg、Ca、Sr及びBaを含み、前記希土類金属元素はLa、Ce、Pr、Nd、Pm、Sm、Eu、Gd、Tb、Dy、Ho、Er、Tm及びYbを含み、前記遷移金属元素はCo、Cr、Fe、Mn、Ni、Cu、Ti、Zn、Sc及びVを含む、ことを特徴とする請求項1〜7のいずれか一項に記載の相転移電子デバイス。
- xは2.5であり、yは0〜2.5である、ことを特徴とする請求項8に記載の相転移電子デバイス。
- Bは遷移金属元素Coである、ことを特徴とする請求項1又は8に記載の相転移電子デバイス。
- Aはアルカリ土類金属元素Srである、ことを特徴とする請求項10に記載の相転移電子デバイス。
- 前記第1相はSrCoO2.5Hであり、前記第2相はSrCoO2.5であり、前記第3相はSrCoO3−δである、ことを特徴とする請求項11に記載の相転移電子デバイス。
- 電場の作用下で、前記相転移材料層は第1相、第2相及び第3相の間で相転移し、前記第1相の格子体積は前記第2相の格子体積より大きく、前記第2相の格子体積は前記第3相の格子体積より大きい、ことを特徴とする請求項1に記載の相転移電子デバイス。
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