JP2020205368A - 実装装置 - Google Patents
実装装置 Download PDFInfo
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- JP2020205368A JP2020205368A JP2019112796A JP2019112796A JP2020205368A JP 2020205368 A JP2020205368 A JP 2020205368A JP 2019112796 A JP2019112796 A JP 2019112796A JP 2019112796 A JP2019112796 A JP 2019112796A JP 2020205368 A JP2020205368 A JP 2020205368A
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- 238000002788 crimping Methods 0.000 claims abstract description 105
- 239000000758 substrate Substances 0.000 claims abstract description 81
- 238000003825 pressing Methods 0.000 claims abstract description 23
- 238000001514 detection method Methods 0.000 claims description 9
- 238000006243 chemical reaction Methods 0.000 claims description 6
- 230000002093 peripheral effect Effects 0.000 claims description 5
- 239000004065 semiconductor Substances 0.000 description 81
- 238000004578 scanning tunneling potentiometry Methods 0.000 description 69
- 235000019832 sodium triphosphate Nutrition 0.000 description 69
- 238000000034 method Methods 0.000 description 18
- 230000008569 process Effects 0.000 description 16
- 230000006870 function Effects 0.000 description 7
- 235000012431 wafers Nutrition 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 238000006073 displacement reaction Methods 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 230000007246 mechanism Effects 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16135—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/16145—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32135—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/32145—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
Abstract
Description
以上説明したように、実装装置100では、可動ツール部126のそれぞれとツール本体部124とを接続する接続部128が、可撓性部材で構成されている。接続部128の第1変形により、チップスタックSTの主面STPに接触した可動ツール部126に対してツール本体部124の上下動が可能となるため、チップスタックSTにおいて基板30からの高さバラツキが生じている場合であっても、複数のチップスタックSTの主面STPのそれぞれに可動ツール部126を適切に接触させることができる。また、接続部128の第2変形により、主面STPの法線方向に沿う押圧力を付与可能に可動ツール部126の主面STPの向きへの追従が可能となるため、チップスタックSTにおいて基板30に対する傾斜バラツキが生じている場合であっても、複数のチップスタックSTの主面STPのそれぞれに可動ツール部126を適切に接触させることができる。したがって、複数のチップスタックSTに対して適切に圧着荷重が加えられるため、圧着対象の複数のチップスタックSTを確実に本圧着することが可能となる。
以上、本開示の実施形態について説明したが、本開示は上述した実施形態に限定されるものではない。本開示は、上述した実施形態を始めとして、当業者の知識に基づいて種々の変更、改良を施した様々な形態で実施することができる。
Claims (7)
- 複数の被実装体を基板上の複数の実装位置に実装する実装装置であって、
前記基板上に載置された複数の前記被実装体を圧着対象として前記基板上で一括して本圧着する本圧着部を備え、
前記本圧着部は、
前記基板に対して上下動可能に設けられたツール本体部と、
前記ツール本体部の前記基板側において前記圧着対象の前記被実装体のそれぞれに対応するように配設された複数の可動ツール部と、
前記可動ツール部のそれぞれと前記ツール本体部とを接続する接続部と、を有し、
前記接続部は、前記被実装体の主面に接触した前記可動ツール部に対して前記ツール本体部の上下動を可能とする第1変形と、前記主面の法線方向に沿う押圧力を付与可能に前記可動ツール部の前記主面の向きへの追従を可能とする第2変形と、を許容する可撓性部材で構成されている、実装装置。 - 前記ツール本体部に接続され、前記ツール本体部の内部のチャンバー部に圧縮空気を供給する空気圧源を更に備え、
前記チャンバー部は、前記空気圧源から供給された前記圧縮空気の圧力を前記可動ツール部のそれぞれに前記接続部を介して付与可能とされている、請求項1に記載の実装装置。 - 前記圧着対象の前記被実装体と前記可動ツール部との接触を検知する複数の検知器と、
前記チャンバー部への前記圧縮空気の供給又は前記チャンバー部からの前記圧縮空気の排出を制御する圧力制御部と、
前記検知器の検知結果に基づいて、前記圧力制御部を制御する制御部と、を更に備え、
前記制御部は、少なくとも1つの前記可動ツール部が前記圧着対象の前記被実装体に接触していない場合には、前記チャンバー部から前記圧縮空気を排出するように前記圧力制御部を制御する、請求項2に記載の実装装置。 - 前記可動ツール部のそれぞれに設けられ、前記圧着対象の前記被実装体と前記可動ツール部との接触を検知する複数の検知器と、
前記チャンバー部への前記圧縮空気の供給又は前記チャンバー部からの前記圧縮空気の排出を制御する圧力制御部と、
前記検知器の検知結果に基づいて、前記圧力制御部を制御する制御部と、を更に備え、
前記制御部は、複数の前記可動ツール部の全てが前記圧着対象の前記被実装体に接触している場合に、前記チャンバー部に前記圧縮空気を供給するように前記圧力制御部を制御する、請求項2又は3に記載の実装装置。 - 前記接続部は、前記圧着対象の前記被実装体と前記可動ツール部との接触に伴う反力に応じて前記ツール本体部の上下方向と交差する方向に変位可能である、請求項1〜4の何れか一項に記載の実装装置。
- 前記可動ツール部は、前記ツール本体部の上下方向に沿って延びる柱状であり、
前記接続部は、前記上下方向に沿って延びると共に前記可動ツール部の周縁部に連結された筒状部材である、請求項1〜5の何れか一項に記載の実装装置。 - 前記可動ツール部は、接触した前記圧着対象の前記被実装体を加熱するヒータを含む、請求項1〜6の何れか一項に記載の実装装置。
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Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10321673A (ja) * | 1997-05-22 | 1998-12-04 | Matsushita Electric Ind Co Ltd | バンプ付きチップのボンディング装置 |
JP2003297878A (ja) * | 2002-04-02 | 2003-10-17 | Matsushita Electric Ind Co Ltd | 部品の基板への部品押圧接合装置及び接合方法 |
JP2010021227A (ja) * | 2008-07-09 | 2010-01-28 | Seiko Epson Corp | 実装装置 |
JP2013138077A (ja) * | 2011-12-28 | 2013-07-11 | Tokyo Electron Ltd | 三次元実装装置 |
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Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10321673A (ja) * | 1997-05-22 | 1998-12-04 | Matsushita Electric Ind Co Ltd | バンプ付きチップのボンディング装置 |
JP2003297878A (ja) * | 2002-04-02 | 2003-10-17 | Matsushita Electric Ind Co Ltd | 部品の基板への部品押圧接合装置及び接合方法 |
JP2010021227A (ja) * | 2008-07-09 | 2010-01-28 | Seiko Epson Corp | 実装装置 |
JP2013138077A (ja) * | 2011-12-28 | 2013-07-11 | Tokyo Electron Ltd | 三次元実装装置 |
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