JP2020184587A - セラミック電子部品 - Google Patents
セラミック電子部品 Download PDFInfo
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- JP2020184587A JP2020184587A JP2019088626A JP2019088626A JP2020184587A JP 2020184587 A JP2020184587 A JP 2020184587A JP 2019088626 A JP2019088626 A JP 2019088626A JP 2019088626 A JP2019088626 A JP 2019088626A JP 2020184587 A JP2020184587 A JP 2020184587A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/30—Stacked capacitors
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B18/00—Layered products essentially comprising ceramics, e.g. refractory products
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/46—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates
- C04B35/462—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates
- C04B35/465—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates based on alkaline earth metal titanates
- C04B35/468—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates based on alkaline earth metal titanates based on barium titanates
- C04B35/4682—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates based on alkaline earth metal titanates based on barium titanates based on BaTiO3 perovskite phase
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/005—Electrodes
- H01G4/012—Form of non-self-supporting electrodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/08—Inorganic dielectrics
- H01G4/12—Ceramic dielectrics
- H01G4/1209—Ceramic dielectrics characterised by the ceramic dielectric material
- H01G4/1218—Ceramic dielectrics characterised by the ceramic dielectric material based on titanium oxides or titanates
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/08—Inorganic dielectrics
- H01G4/12—Ceramic dielectrics
- H01G4/1209—Ceramic dielectrics characterised by the ceramic dielectric material
- H01G4/1218—Ceramic dielectrics characterised by the ceramic dielectric material based on titanium oxides or titanates
- H01G4/1227—Ceramic dielectrics characterised by the ceramic dielectric material based on titanium oxides or titanates based on alkaline earth titanates
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/65—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes
- C04B2235/658—Atmosphere during thermal treatment
- C04B2235/6583—Oxygen containing atmosphere, e.g. with changing oxygen pressures
- C04B2235/6584—Oxygen containing atmosphere, e.g. with changing oxygen pressures at an oxygen percentage below that of air
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/65—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes
- C04B2235/66—Specific sintering techniques, e.g. centrifugal sintering
- C04B2235/661—Multi-step sintering
- C04B2235/662—Annealing after sintering
- C04B2235/663—Oxidative annealing
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
- C04B2235/74—Physical characteristics
- C04B2235/78—Grain sizes and shapes, product microstructures, e.g. acicular grains, equiaxed grains, platelet-structures
- C04B2235/782—Grain size distributions
- C04B2235/783—Bimodal, multi-modal or multi-fractional
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
- C04B2237/32—Ceramic
- C04B2237/34—Oxidic
- C04B2237/345—Refractory metal oxides
- C04B2237/346—Titania or titanates
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
- C04B2237/70—Forming laminates or joined articles comprising layers of a specific, unusual thickness
- C04B2237/704—Forming laminates or joined articles comprising layers of a specific, unusual thickness of one or more of the ceramic layers or articles
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/08—Inorganic dielectrics
- H01G4/12—Ceramic dielectrics
Abstract
Description
まず、積層セラミックコンデンサの概要について説明する。図1は、実施形態に係る積層セラミックコンデンサ100の部分断面斜視図である。図1で例示するように、積層セラミックコンデンサ100は、直方体形状を有する積層チップ10と、積層チップ10のいずれかの対向する2端面に設けられた外部電極20a,20bとを備える。なお、積層チップ10の当該2端面以外の4面のうち、積層方向の上面および下面以外の2面を側面と称する。外部電極20a,20bは、積層チップ10の積層方向の上面、下面および2側面に延在している。ただし、外部電極20a,20bは、互いに離間している。
図5で例示するように、まず、誘電体層11を形成するための誘電体材料を用意する。誘電体層11に含まれるAサイト元素およびBサイト元素は、通常はABO3の粒子の焼結体の形で誘電体層11に含まれる。例えば、BaTiO3は、ペロブスカイト構造を有する正方晶化合物であって、高い誘電率を示す。このBaTiO3は、一般的に、二酸化チタンなどのチタン原料と炭酸バリウムなどのバリウム原料とを反応させてチタン酸バリウムを合成することで得ることができる。誘電体層11の主成分セラミックの合成方法としては、従来種々の方法が知られており、例えば固相法、ゾル−ゲル法、水熱法等が知られている。本実施形態においては、これらのいずれも採用することができる。
次に、得られた誘電体材料に、ポリビニルブチラール(PVB)樹脂等のバインダと、エタノール、トルエン等の有機溶剤と、可塑剤とを加えて湿式混合する。得られたスラリを使用して、例えばダイコータ法やドクターブレード法により、基材上に例えば厚み3μm以下の帯状の誘電体グリーンシートを塗工して乾燥させる。
このようにして得られた成型体を、250〜500℃のN2雰囲気中で脱バインダ処理した後に、酸素分圧10−8〜10−13atmの還元雰囲気中で1100〜1300℃で10分〜2時間焼成することで、成型体の各粒子が焼結する。このようにして、セラミック積層体が得られる。
その後、N2ガス雰囲気中で600℃〜1000℃で再酸化処理を行う。例えば、950℃で1h再酸化処理を行う。その後、冷却の過程で、400℃においてN2ガス雰囲気から雰囲気を大気に切り替え、室温まで徐冷する。このような処理を行うことにより、誘電体層11の結晶粒界16の酸素濃度を高めることができる。それにより、酸素欠陥14が結晶粒界16を超えて、あるいは結晶粒界16に沿って移動することを抑制することができる。その結果、IAに対してIBを相対的に低下させることができる。
その後、外部電極20a,20bの下地層上に、めっき処理により、Cu,Ni,Sn等の金属コーティングを行う。以上の行程により、積層セラミックコンデンサ100が完成する。
誘電体材料に添加するSiO2量を調整してもよい。例えば、誘電体材料において、主成分セラミックに対して、SiO2またはSiを主成分としたガラスの濃度を、Si原子濃度で2.0atm%以上としてもよい。このような添加量とすることで、酸素欠陥の移動障壁となるSiO2あるいはガラス相を増やすことで、IAに対して相対的にIBを低下させることができる。
11 誘電体層
12 内部電極層
13 カバー層
14 酸素欠陥
15 結晶粒
16 結晶粒界
20a,20b 外部電極
100 積層セラミックコンデンサ
Claims (5)
- セラミックを主成分とする誘電体層と、内部電極層と、が交互に積層された積層構造を備え、
前記誘電体層に対する130℃、5V/μm、30minの分極による昇温速度10℃/minのTSDCにおいて、130℃から190℃の低温側ピーク電流値をIAとし、190℃〜280℃の高温側ピーク電流値をIBとした場合に、IA/IB>1.40の関係が成立することを特徴とするセラミック電子部品。 - 前記誘電体層の平均厚みは、3μm以下であることを特徴とする請求項1記載のセラミック電子部品。
- 前記誘電体層の平均厚みは、0.45μm以下であることを特徴とする請求項1記載のセラミック電子部品。
- 前記誘電体層の厚み方向において、結晶粒の平均数は、3から8であることを特徴とする請求項1〜3のいずれか一項に記載のセラミック電子部品。
- 前記誘電体層の主成分は、BaTiO3であることを特徴とする請求項1〜4のいずれか一項に記載のセラミック電子部品。
Priority Applications (3)
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JP2019088626A JP2020184587A (ja) | 2019-05-08 | 2019-05-08 | セラミック電子部品 |
US16/859,669 US11410817B2 (en) | 2019-05-08 | 2020-04-27 | Ceramic electronic device |
US17/855,074 US11694849B2 (en) | 2019-05-08 | 2022-06-30 | Ceramic electronic device |
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JP2019088626A JP2020184587A (ja) | 2019-05-08 | 2019-05-08 | セラミック電子部品 |
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JP2020184587A true JP2020184587A (ja) | 2020-11-12 |
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JP2019088626A Pending JP2020184587A (ja) | 2019-05-08 | 2019-05-08 | セラミック電子部品 |
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US (2) | US11410817B2 (ja) |
JP (1) | JP2020184587A (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11901132B2 (en) | 2021-05-27 | 2024-02-13 | Taiyo Yuden Co., Ltd. | Ceramic electronic device and manufacturing method of the same |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6243254B1 (en) * | 1998-08-11 | 2001-06-05 | Murata Manufacturing Co., Ltd. | Dielectric ceramic composition and laminated ceramic capacitor using the same |
US6556422B2 (en) * | 2000-07-05 | 2003-04-29 | Samsung Electro-Mechanics Co., Ltd. | Dielectric ceramic composition, multi-layer ceramic capacitor using the same, and manufacturing method therefor |
JP4349843B2 (ja) | 2003-05-28 | 2009-10-21 | 京セラ株式会社 | 積層セラミックコンデンサおよびその製法 |
WO2010047181A1 (ja) | 2008-10-21 | 2010-04-29 | 株式会社村田製作所 | 誘電体セラミックおよび積層セラミックコンデンサ |
JP2010118499A (ja) * | 2008-11-13 | 2010-05-27 | Murata Mfg Co Ltd | 積層セラミック電子部品 |
KR101751058B1 (ko) * | 2010-12-10 | 2017-06-27 | 삼성전기주식회사 | 적층 세라믹 캐패시터 및 그 제조 방법 |
JP6105326B2 (ja) | 2013-02-27 | 2017-03-29 | 京セラ株式会社 | 積層セラミックコンデンサ |
JP6686676B2 (ja) * | 2016-04-28 | 2020-04-22 | 株式会社村田製作所 | 積層セラミックコンデンサおよびその製造方法 |
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2019
- 2019-05-08 JP JP2019088626A patent/JP2020184587A/ja active Pending
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2020
- 2020-04-27 US US16/859,669 patent/US11410817B2/en active Active
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2022
- 2022-06-30 US US17/855,074 patent/US11694849B2/en active Active
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11901132B2 (en) | 2021-05-27 | 2024-02-13 | Taiyo Yuden Co., Ltd. | Ceramic electronic device and manufacturing method of the same |
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Publication number | Publication date |
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US11410817B2 (en) | 2022-08-09 |
US20220336154A1 (en) | 2022-10-20 |
US20200357573A1 (en) | 2020-11-12 |
US11694849B2 (en) | 2023-07-04 |
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