JP2020184552A5 - - Google Patents

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Publication number
JP2020184552A5
JP2020184552A5 JP2019086435A JP2019086435A JP2020184552A5 JP 2020184552 A5 JP2020184552 A5 JP 2020184552A5 JP 2019086435 A JP2019086435 A JP 2019086435A JP 2019086435 A JP2019086435 A JP 2019086435A JP 2020184552 A5 JP2020184552 A5 JP 2020184552A5
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JP
Japan
Prior art keywords
film forming
flow rate
processing container
temperature
preparation step
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JP2019086435A
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English (en)
Japanese (ja)
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JP2020184552A (ja
JP7407521B2 (ja
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Priority to JP2019086435A priority Critical patent/JP7407521B2/ja
Priority claimed from JP2019086435A external-priority patent/JP7407521B2/ja
Priority to CN202010288943.4A priority patent/CN111850512A/zh
Priority to US16/852,478 priority patent/US11674224B2/en
Priority to KR1020200048699A priority patent/KR102705673B1/ko
Publication of JP2020184552A publication Critical patent/JP2020184552A/ja
Publication of JP2020184552A5 publication Critical patent/JP2020184552A5/ja
Application granted granted Critical
Publication of JP7407521B2 publication Critical patent/JP7407521B2/ja
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JP2019086435A 2019-04-26 2019-04-26 成膜方法及び成膜装置 Active JP7407521B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2019086435A JP7407521B2 (ja) 2019-04-26 2019-04-26 成膜方法及び成膜装置
CN202010288943.4A CN111850512A (zh) 2019-04-26 2020-04-14 成膜方法和成膜装置
US16/852,478 US11674224B2 (en) 2019-04-26 2020-04-19 Film forming method and film forming apparatus
KR1020200048699A KR102705673B1 (ko) 2019-04-26 2020-04-22 성막 방법 및 성막 장치

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2019086435A JP7407521B2 (ja) 2019-04-26 2019-04-26 成膜方法及び成膜装置

Publications (3)

Publication Number Publication Date
JP2020184552A JP2020184552A (ja) 2020-11-12
JP2020184552A5 true JP2020184552A5 (enExample) 2021-11-25
JP7407521B2 JP7407521B2 (ja) 2024-01-04

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Family Applications (1)

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JP2019086435A Active JP7407521B2 (ja) 2019-04-26 2019-04-26 成膜方法及び成膜装置

Country Status (4)

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US (1) US11674224B2 (enExample)
JP (1) JP7407521B2 (enExample)
KR (1) KR102705673B1 (enExample)
CN (1) CN111850512A (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7236922B2 (ja) * 2019-04-26 2023-03-10 東京エレクトロン株式会社 熱処理装置、熱処理方法及び成膜方法
US11356082B2 (en) 2019-12-12 2022-06-07 Texas Instruments Incorporated Folded ramp generator
CN116083877A (zh) * 2021-11-08 2023-05-09 长鑫存储技术有限公司 一种炉管与形成薄膜的方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7393561B2 (en) 1997-08-11 2008-07-01 Applied Materials, Inc. Method and apparatus for layer by layer deposition of thin films
US6701066B2 (en) * 2001-10-11 2004-03-02 Micron Technology, Inc. Delivery of solid chemical precursors
US20030164143A1 (en) 2002-01-10 2003-09-04 Hitachi Kokusai Electric Inc. Batch-type remote plasma processing apparatus
US6704667B2 (en) * 2002-05-13 2004-03-09 Taiwan Semiconductor Manufacturing Co., Ltd Real time mass flow control system with interlock
WO2005024926A1 (ja) 2003-09-05 2005-03-17 Hitachi Kokusai Electric Inc. 基板処理装置及び半導体装置の製造方法
JP4524153B2 (ja) * 2004-08-10 2010-08-11 道昭 坂本 台紙並びに書籍の表紙
JP4516838B2 (ja) 2004-12-27 2010-08-04 株式会社日立国際電気 基板処理装置および半導体装置の製造方法
US8235001B2 (en) * 2007-04-02 2012-08-07 Hitachi Kokusai Electric Inc. Substrate processing apparatus and method for manufacturing semiconductor device
JP5385002B2 (ja) * 2008-06-16 2014-01-08 株式会社日立国際電気 基板処理装置及び半導体デバイスの製造方法
JP5250600B2 (ja) * 2009-11-27 2013-07-31 東京エレクトロン株式会社 成膜方法および成膜装置
JP5886531B2 (ja) * 2011-02-24 2016-03-16 東京エレクトロン株式会社 成膜方法および成膜装置
WO2015097871A1 (ja) * 2013-12-27 2015-07-02 株式会社日立国際電気 半導体装置の製造方法、基板処理装置及び記録媒体
WO2015147038A1 (ja) * 2014-03-26 2015-10-01 株式会社日立国際電気 基板処理装置、半導体装置の製造方法及び記録媒体
JP6386901B2 (ja) 2014-12-17 2018-09-05 株式会社ニューフレアテクノロジー 気相成長装置及び気相成長方法
JP6778553B2 (ja) * 2016-08-31 2020-11-04 株式会社日本製鋼所 原子層成長装置および原子層成長方法
US10176984B2 (en) * 2017-02-14 2019-01-08 Lam Research Corporation Selective deposition of silicon oxide

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