JP2020150780A - Electrostatic application equipment of charging infusion type, driven by image force - Google Patents

Abstract

To solve the problem in a longitudinally asymmetric image force acted on an electric charge conveying body by implanting an electric charge by an electrostatic induction to the electric charge conveying body having a longitudinally asymmetric shape in a progression direction that an image fore driving type electrostatic generator for conveying an implantation electric charge to a high potential has less an implanted electric charge and an image force acted on them, and thus a sufficient output cannot be obtained.SOLUTION: An electric charge conveying body is grounded to a high potential source having a high potential while approaching and adhering the electric charge conveying body to be conducted, and the electric charge conveying body is charged with an electric charge charged at the time.EFFECT: An output of a conveying electric charge amount and a power generator are severely increased.SELECTED DRAWING: Figure 11

Description

The present invention utilizes a phenomenon in which the strength of the mirror image force acting on the charged charge of a charge carrier having an asymmetric shape in the front-rear direction differs between the front and back in the traveling direction, and the charge injection type electrostatic power generation application using the mirror image force as the driving force. It is about equipment.

At present, the biggest issue we face is global warming, that is, environmental problems.
In order to solve this problem, various power generation methods that do not generate carbon dioxide have been adopted. Nuclear power generation, solar power generation, wind power generation, etc.
However, there are problems in safety, stability, cost, durability, miniaturization, etc., and a perfect solution has not yet been obtained. An electrostatic generator has the potential to solve this problem.
However, conventional electrostatic generators cannot meet this demand and still need improvement.

The principle of the electrostatic generator is that the charge injection electrode (which is at a low potential and is hereinafter referred to as the injection electrode) injects charge into the charge carrier and counteracts the electrostatic force acting on the charge recovery electrode (charge recovery electrode). It is at a high potential and is electrically lifted to a recovery electrode) where the charge is recovered.
However, in the Van de Graaff generator, which is a typical current electrostatic generator, a mechanical means (electric motor) is used to transport the charge carrier against the electrostatic force. Since the power consumed by the motor is larger than the generated power, it is a high potential (about 1 million volts) generator, but it cannot be said to be a generator.

On the other hand, there is a method in which the mirror image force is used as the transfer force of the charge carrier. The mirror image force is an electrostatic force that acts on the electric charge when the electric charge is near the metal, because the mirror image charge is generated in the metal and an attractive force is generated. The strength of the mirror image force is proportional to the square of the electric charge and inversely proportional to the square of the distance to the metal.
Therefore, at a position away from the injection electrode, the electric charge is placed on the charge carrier by the corona discharge of the injection electrode, and the charge acts between them, and the reverse mirror image force (hereinafter, hereinafter, the charge carrier) tries to pull back the charge carrier. (Reverse mirror image power) is weakened. Then, when approaching the recovery electrode, the forward mirror image force (hereinafter referred to as the forward mirror image force) that attracts the charge carrier to the recovery electrode can be relatively strengthened (Reference Patent Document 1). In this case, the shape of the charge carrier was assumed to be spherical.

However, it is actually difficult to give an electric charge by corona discharge, and the electrostatic generator has not been realized. Therefore, instead of corona discharge, we decided to inject charge into the charge carrier by electrostatic induction.
In that case, the shape of the charge carrier was changed to a flat plate shape because the amount of injected charge was larger in the flat plate shape than in the spherical shape. However, in the flat plate shape, the strength of the reverse mirror image force that works to pull back the charged charge carrier after it comes out of the injection electrode is equal to the strength of the forward mirror image force that tries to pull it back when it approaches the recovery electrode. Since the energy to drive the charge carrier cannot be obtained, the tip of the flat plate-shaped charge carrier is folded at a right angle to form a horizontal L-shape. As a result, the forward mirror image force when approaching the recovery electrode became stronger than the reverse mirror image force when the charge carrier passed through the injection electrode, and the difference was enough to drive the charge carrier.

Reference Patent Document 2 and Non-Patent Document 1 describe the configuration of an electrostatic generator utilizing the charge injection type mirror image force by electrostatic induction.
FIG. 1 is a principle explanatory view, and FIG. 2 is a front view of a device for simulating an electrostatic force acting on a charge carrier.
In FIGS. 1 and 2, reference numeral 1 denotes a high-potential electrostatic induction potential source (hereinafter referred to as a high-potential source) provided for inducing an electric charge to the grounded counter electrode 2, and is referred to by an electret. It is formed and has an average potential of +3165V.
In addition, a ferroelectric substance can be used instead of the electret. Further, instead of the electret, an electrode may be provided and a voltage may be applied to the electrode from a power source (not shown).

The high potential source 1 has a width of 1.0 mm, a depth of 1.2 mm, and a thickness of 0.05 mm. A counter electrode 2 having the same area as the high potential source 1 is placed at a position 1.4 mm directly below the high potential source 1.
A pair of parallel plate electrodes are placed as charge recovery electrodes 3 at positions 2.0 mm away from the right side surfaces of the high potential source 1 and the counter electrode 2. The width and depth of the charge recovery electrode 3 are the same as those of the high potential source and the counter electrode. The distance between the parallel plate electrodes serving as the charge recovery electrodes 3 is set to 0.3 mm so that the L-shaped charge carrier 4, which will be described later, can pass through. The potential of the charge recovery electrode 3 is -100V.

Reference numeral 4 indicates an L-shaped charge carrier. The width in the left-right direction is 0.8 mm, the depth is 1.0 mm, the thickness is 0.05 mm, and the height of the vertical wall at the right end is 0.2 mm.
Reference numeral 5 is a shield electrode placed between each right end of the high potential source 1 and the counter electrode 2. The shield electrode 5 is placed 0.35 mm below the high potential source 1, has a length of 0.6 mm and a width of 0.05 mm, and is grounded.
If the shield electrode 5 is not provided, the positive charge of the high potential source 1 exerts a strong electrostatic attraction on the negative charge carried by the charge carrier 4, and the kinetic energy thereof is reduced.
Reference numeral 6 is a capacitor that stores the charge recovered from the charge carrier 4 by the recovery electrode 3. Reference number 7 is a reverse mirror image force acting in a direction of pulling back the charge carrier 4, and reference number 8 is a forward mirror image force acting in a direction of pulling the charge carrier 4.

When the uncharged charge carrier 4 enters from the left side of the high potential source 1 in the figure and comes to a position below the high potential source 1 shown in the figure, its potential becomes + 59.8V. A conductive thin wire (not shown) is attached to the counter electrode 2. At this time, when the charge carrier 4 is in contact with the conductive thin wire and is conducted with the counter electrode 2 which is grounded, the high potential source 1 The negative charge electrostatically induced in the counter electrode 2 by the positive charge is injected into the charge carrier 4, and the charge carrier 4 is negatively charged. As a result, the potential of the charge carrier 4 becomes 0V, and the injected charge amount becomes −9.55pC.
At this time, since the amount of charged charge is proportional to the area where the charge carrier 4 and the counter electrode 2 face each other, the shape of the charge carrier 4 is optimally flat.
The charge carrier 4 further advances to the right in the figure, enters the recovery electrode 3, and the transferred charge is recovered by the recovery electrode 3.
In this process, when the shape of the charge carrier 4 is a lateral L-shape with the traveling direction bent vertically as shown in FIG. 2, the reverse mirror image force generated between the charge carrier 4 and the counter electrode 2 is small, and the recovery electrode 3 The forward mirror image force generated between and is increased. This difference in force can be used to mechanically drive the charge carrier 4 and electrically raise the charge to a higher position.

Here, in the configuration of the device shown in FIG. 2, the mirror image force acting on the charge carrier obtained by the two-dimensional difference method is shown in FIGS. 3 and 4.
FIG. 3 shows the mirror image force (reverse mirror image force) before and after the charge carrier 4 comes out of the counter electrode 2, and the distance between the right end of the counter electrode 2 and the left end of the charge carrier 4 is particularly shortly after the charge carrier 4. It reaches a maximum at 0.05 mm and reaches 4.5 μN.
On the other hand, FIG. 4 shows the mirror image force (forward mirror image force) before and after the charge carrier 4 enters the recovery electrode 3. In particular, when the distance between the charge carrier 4 and the recovery electrode 3 is 0.1 mm, it becomes 7.0 μN. It should be noted that each mirror image force does not act at the intermediate point between the counter electrode 2 and the recovery electrode 3.

FIG. 5 shows the results of calculating the energy lost by the reverse mirror image force and the energy obtained by the forward mirror image force.
As shown in the figure, the difference between the two is about 1 nJ, which can be used to mechanically drive the charge carrier 4 and electrically raise the charged charge to a high potential.
Then, when the charge carrier 4 enters between the pair of recovery electrodes 3 and their center points coincide with each other, the charge carrier 4 is electrically short-circuited with the recovery electrode 3, and its potential becomes -100V, and the charge carrier 4 is transported. The charged charge is transferred to the recovery electrode 3.
However, since the recovery electrode 3 does not completely shield the charge carrier 4 from the external electric field, 99.2% of the charge is recovered by the recovery electrode 3, but 0.8% of the charge is left in the charge carrier 4. ..
Therefore, the charge of -9.55pC * 0.992 = -9.47pC was carried from the potential of 0V to -100V, and the electrostatic energy of 0.947nJ was created.

The electrostatic induction type electrostatic generator confirmed in the above simulation can be actually prototyped and tested, but the size must be at least 10 to 30 times the above dimensions. Even if this is possible mechanically, it is not possible to multiply the potential of the electret high potential source by a factor of 10. In this case, if only the size is increased by 10 times without increasing the potential, the amount of injected charge per unit area will be reduced to 1/10.
However, recently, a new charge injection method has been invented that can inject a significantly larger amount of charge into a charge carrier, unlike the electrostatic induction method. This new charge injection method is used for electrostatic induction using mirror image force. If it is used in a type electrostatic generator, the amount of injected charge will increase significantly, and there is a possibility that it can be used in practice.

In the charge injection method of the present invention, the high-potential high-potential source 1 is placed at the position of the counter electrode 2, the charge carrier 4 and the high-potential source 1 face each other at a very narrow interval, and the charge carrier 4 is grounded. It is a thing.
Since the high potential source 1 and the charge carrier 4 form a capacitor with an air layer between them, when the charge carrier 4 is grounded, a capacitor charging current flows into the charge carrier 4. That is, it is a capacitor rechargeable charge injection method, and is hereinafter referred to as a rechargeable charge injection method. When the distance between the charge carrier 4 and the high potential source 1 was 0.05 mm, the charge charge amount was -448 pC, which was about 50 times that of the electrostatic induction injection method.

[Patent Document 1] Japanese Unexamined Patent Publication No. 2002-135468
[Patent Document 2] Japanese Unexamined Patent Publication No. 2006-325394
[Patent Document 3] Japanese Unexamined Patent Publication No. 2008-005690

[Non-Patent Document 1] Proceedings of the 2006 Annual Meeting of the American Society of Electrostatics P.137
[Non-Patent Document 2] [Asymmetric Electrostatic Forces and a New Electrostatic Generator], Nova Science Publishers, New York, 2010

An object of the present invention is to significantly increase the injected charge amount of the mirror image force driven electrostatic generator so that it can be actually used.

Means to solve problems

The above object of the present invention can be achieved by changing the method of injecting electric charge into the charge carrier from the conventional electrostatic induction type to the rechargeable type and injecting a large amount of charge into the charge carrier.

According to each embodiment of the present invention, the amount of charge injected into the charge carrier by the rechargeable injection method is much larger than the amount of charge injected by the electrostatic induction method, so that the charge that can be carried by the charge carrier is much larger. The amount will increase remarkably, and the mirror image force acting on the charge carrier will also become remarkably strong, so that the mirror image force drive type electrostatic generator can be put into practical use (testing machine and product).

FIG. 1 is a schematic diagram illustrating the principle of a conventional mirror image power drive type generator. FIG. 2 is a front view of a device for obtaining an electrostatic force acting on a charge carrier by simulation in a conventional mirror image force drive type electrostatic generator. FIG. 3 is a graph showing the mirror image force (reverse mirror image force) before and after the time when the charge carrier exits the injection electrode. FIG. 4 is a graph showing the mirror image force (forward mirror image force) before and after the time when the charge carrier enters the recovery electrode. FIG. 5 is a graph showing the energy lost by the reverse mirror image force and the energy obtained by the forward electrostatic force. FIG. 6 is a front view of a rechargeable injection type mirror image force driven electrostatic generator. FIG. 7 is a graph showing the amount of charge charged and injected into the charge carrier with respect to the voltage of the high potential source. FIG. 8 is a graph showing the results of separately obtaining the forward mirror image force and the reverse mirror image force acting on the charge carrier. FIG. 9 is a graph showing the difference between the forward mirror image force and the reverse mirror image force and the actual mirror image force. FIG. 10 is a graph showing the total electrostatic force received by the charge carrier from the high potential source to the recovery electrode. FIG. 11 is a perspective view showing a configuration of an apparatus for carrying out the first embodiment of the present invention. FIG. 12 is a graph showing the substantial mirror image force received by the charge carrier from the grounded high potential source to the grounded recovery electrode. FIG. 13 is a graph showing the total electrostatic force, the substantial mirror image force, and the difference between them. FIG. 14 is a graph showing the total electrostatic force received by the charge carrier from the high potential source through the shield electrode to the recovery electrode in the second embodiment. FIG. 15 is a perspective view showing a configuration of an apparatus for carrying out the second embodiment of the present invention. FIG. 16 is a perspective view showing a configuration of an apparatus for carrying out the third embodiment of the present invention. FIG. 17 is a graph showing the total electrostatic force acting on the charge carrier in the third embodiment. FIG. 18 is a perspective view showing a configuration of an apparatus for carrying out the fourth embodiment of the present invention.

Form for carrying out the invention

The applicant has set a high potential source and a charge carrier having a high potential for the purpose of significantly increasing the amount of charge carried by the charge carrier in the mirror image force driven electrostatic generator and putting the generator into practical use. Was brought close to each other to form an air layer condenser, the charge carrier was grounded, and the charge carrier was charged in large quantities with the charge injected into the charge carrier.

In order to confirm the actual usability of the mirror image force drive type electrostatic generator using the rechargeable charge injection method, first, the electrostatic force acting on the charge carrier is obtained by simulation. At that time, the size of the prototype was increased in order to create a prototype and confirm the actual usability in the experiment. The front view is shown in FIG.
In FIG. 6, reference numeral 1 is a high potential source, formed of an electret, a ferroelectric substance, or an electrode to which a high voltage is applied. The high potential source 1 corresponds to an inductor 1 for causing electrostatic induction in the conventional mirror image force drive type electrostatic generator.
Reference numeral 3 is a recovery electrode, and reference numeral 4 is a charge carrier. The shape of the charge carrier 4 was a gutter shape in which two of them were stacked instead of the horizontally placed L shape. Since there are horizontal plates on the top and bottom facing the high potential source, it is charged twice as much as the L-shape.

The width of the high potential source 1 was 19.2 mm, the width of the recovery electrode 3 was 32.0 mm, and the distance between the two was 33.0 mm. The distance between the upper and lower high potential sources 1 and the upper and lower recovery electrodes 3 was 20.4 mm, and the distance between the upper and lower high potential sources 1 and the upper and lower recovery electrodes 3 and the upper and lower horizontal plates of the charge carrier 4 was 5.0 mm. The charge carrier 4 is formed of a metal plate having a thickness of 0.2 mm, and has a width of 10.2 mm, a length of 10.4 mm, and a depth of 60.0 mm.
First, in this configuration, when the high potential source 1 was used as an electrode and a voltage of 1 to 10 kV was applied, the amount of charge charged and injected into the charge carrier 4 was determined by simulation. The result is shown in FIG. From the illustration, it can be seen that the injected charge amount increases in direct proportion to the voltage of the high potential source 1.

Next, the reverse mirror image force acting on the charged charge carrier 4 with the high potential source 1 and the forward mirror image force acting on the recovery electrode 3 were separately obtained by simulation.
Specifically, a charged charge carrier 4 is placed at an intermediate point between the high potential source 1 and the recovery electrode 3, the recovery electrode 3 is removed, and the high potential source 1 is grounded to act on the charge carrier 4. That is, the reverse mirror image power was obtained. On the contrary, the high potential source 1 was removed, and the recovery electrode 3 was grounded to obtain the forward electrostatic force. Then, the result of obtaining the forward / reverse mirror image force by changing the charge amount of the charge carrier 4 is shown in FIG.
From FIG. 8, it can be seen that the forward electrostatic force is three times as large as the reverse electrostatic force. It is also clear that the mirror image force becomes stronger in proportion to the square of the charge amount. It is considered that this difference in forward / reverse mirror image power becomes the actual mirror image power.

Therefore, in the presence of both the grounded high potential source 1 and the grounded recovery electrode 3, the electrostatic force acting on the charged charge carrier 4, that is, the substantial mirror image force was obtained. The results are shown in FIG. 9 side by side with the previously obtained forward / reverse mirror image force difference.
From FIG. 9, it can be seen that the substantial mirror image force is less than half the difference between the separately obtained forward mirror image force and the reverse mirror image force.
The reason for this is that when there is one ground electrode on one side, the charged charge on the charge carrier 4 is mostly biased toward the ground electrode side, whereas when the ground electrode is on both sides, the charged charge is also divided on both sides. Because.

Even in the actual mirror image force, its strength increases in proportion to the square of the amount of charge. Therefore, in the method using the mirror image force, the amount of charge should be as large as possible.
For that purpose, the higher the potential of the high potential source 1, the more advantageous it is, but in the prototype experimental machine with the configuration of this device, at 9 kV or higher, the prototype is made between the high potential source 1 and the grounded charge carrier 4. In the experimental machine, discharge sometimes occurred. If the interval is kept at 5 mm as designed, no discharge should occur, but it is probable that the accuracy of the prototype was poor and the orbit of the charge carrier deviated and the interval became 3 mm or less.

Therefore, here, the voltage of the high potential electrode 1 is set to + 8.0 kV.
At that time, the amount of charge to be charged and injected into the charge carrier 4 is −30.8 nC. At each point from the point where the left end of the charge carrier 4 having this charge is lined up at the right end of the high potential source 1 to the point where the right end of the charge carrier 4 reaches the left end of the recovery electrode 3, the charge carrier 4 The electrostatic force received was calculated by simulation. The result is shown in FIG.
From FIG. 10, when the distance between the left end of the charge carrier 4 and the right end of the high potential source 1 is between 0 mm and 10 mm, a reverse electrostatic force of -2 mN to -4 mN acts in the left direction, that is, in the pull-back direction. After that, between 10 mm and 22.8 mm, on the contrary, it can be seen that a forward electrostatic force of + 3 mN to + 5 mN acts in the right direction, that is, in the direction of pulling it.
At an interval of 22.8 mm, the right end of the charge carrier 4 reaches the left end of the recovery electrode 3.

As a result, the charge carrier 4 moving from left to right during this period is decelerated between 0 mm and 10 mm to lose kinetic energy, and is accelerated between 10 mm and 22.8 mm to obtain kinetic energy. At this time, the energy lost is -24 μJ, and the energy gained is + 45 μJ. That is, the net energy obtained by the charge carrier 4 during this period is +21 μJ.
Therefore, as a first embodiment of the present invention, as shown in FIG. 11, six charge carriers 4 having a length of 60 mm are rotated around a central axis 16 having a radius of 100 mm at intervals of 60 degrees. Arranged radially on the body disk 14. At this time, the turning radius of the center of the charge carrier 4 having a length of 60 mm is 70 mm.
Further, the fixed electrode plates 13 and 15 are arranged above and below the charge carrier disk 14, and three sets of the high potential source 1 and the recovery electrode 3 are respectively arranged on the back surface of the upper electrode plate 13 and the front surface of the lower electrode plate 15. , Place facing each other.
The six charge carriers 4 on the charge carrier disk 14 are supplied with electric charge when passing through each high potential source 1, and are weakly decelerated by electrostatic force between the high potential source 1 and the recovery electrode 3, followed by a weak deceleration by electrostatic force. It is strongly accelerated and releases the transferred charge in the recovery electrode 3.

The individual charge carriers 4 obtain a net energy of 21 μJ between the high potential source 1 and the recovery electrode 3. Since the charge carrier disk 14 passes between the high potential source 1 and the recovery electrode 3 three times during one rotation, the energy obtained during one rotation is 63 μJ. Since the charge carrier disk 14 has six charge carriers 4, the energy obtained by the charge carrier disk 14 during one rotation is 378 μJ.
The charge carrier disk 14 is accelerated by electrostatic force as described above, but on the other hand, it receives air resistance and dynamic friction force as it rotates. Contact with conductive terminals for injection and recovery (not shown) also causes mechanical resistance, but this force is very small due to the small and flexible conductive terminals.

上式において、Cdは空気抵抗係数、pは空気密度、Sは６個の電荷搬送体の前面面積、及びvは電荷搬送体電極の速度である。
空気密度は1.3kg/m³、電荷搬送体４の前面面積は0.0036m²である。従って、空気抵抗係数を1.5、電荷搬送体４の回転速度を0.44m/秒（60rpm）とすると、空気抵抗力faは0.68mNとなる。 The air resistance Fa is calculated by the following equation.

In the above equation, Cd is the air resistance coefficient, p is the air density, S is the front area of the six charge carriers, and v is the velocity of the charge carrier electrodes.
The air density is 1.3 kg / m ³ , and the front area of the charge carrier 4 is 0.0036 m ² . Therefore, if the air resistance coefficient is 1.5 and the rotation speed of the charge carrier 4 is 0.44 m / sec (60 rpm), the air resistance fa is 0.68 mN.

ここで、μは動摩擦係数、mは電荷搬送体保持円板１４と電荷搬送体４の合計質量、及びgは重力加速度である
動摩擦係数を最小にするために、電荷搬送体円板１４の回転部分と、中心軸１６をともにテフロンにした場合、動摩擦係数は0.10である。電荷搬送体円板１４の質量は0.01kgで、重力加速度は、9.81m/s²なので、動摩擦力fkは9.81mNになる。この値は、電荷搬送体４が回収電極３の近傍にあるときに受ける最大静電力5.6mNより大きく、電荷搬送体円板１４は回転できない。
しかしながら、近年発明されたADB（自律分散式）ベアリング（空スペース社製）によれば、動摩擦係数が0.0015であり、その場合動摩擦力は、0.015mNになる。
なお、当該ADBベアリングは、従来のボールベアリングが、レオナルドダビンチの発明以来、全てボール同士が接触しないように、ボールホルダーを使用しているのに対して、その機構を工夫することで、ボールホルダーを不要にして動摩擦係数を驚異的に小さくしたものである。 On the other hand, the dynamic friction force fk is calculated by the following equation.

Here, μ is the dynamic friction coefficient, m is the total mass of the charge carrier holding disk 14 and the charge carrier 4, and g is the rotation of the charge carrier disk 14 in order to minimize the dynamic friction coefficient which is the gravitational acceleration. When both the portion and the central axis 16 are set to Teflon, the coefficient of kinetic friction is 0.10. Since the mass of the charge carrier disk 14 is 0.01 kg and the gravitational acceleration is 9.81 m / s ² , the dynamic friction force fk is 9.81 mN. This value is larger than the maximum electrostatic force of 5.6 mN received when the charge carrier 4 is in the vicinity of the recovery electrode 3, and the charge carrier disk 14 cannot rotate.
However, according to the recently invented ADB (autonomous distributed) bearing (manufactured by Empty Space Co., Ltd.), the coefficient of dynamic friction is 0.0015, in which case the dynamic friction force is 0.015 mN.
In addition, the ADB bearing uses a ball holder so that all the balls do not come into contact with each other since the invention of Leonardo da Vinci, whereas the conventional ball bearing uses a ball holder by devising the mechanism. The dynamic friction coefficient is remarkably reduced by eliminating the need for.

Therefore, the ADB bearing was fixed to the center of the charge carrier disk 14, and fitted into the hole in the center of the bearing at the tip of the stainless steel fixing column 16. As a result, the total of air resistance and dynamic friction force was 0.695 mN.
When 0.035 mN is added as the mechanical resistance received at the time of contact with the conductive terminal (not shown), the force required for the charge carrier disk 14 to continue rotating becomes 0.730 mN. The energy required to rotate the charge carrier disk 14 once by applying this force is estimated to be 321 μJ.

As a result, 57 μJ of the 378 μJ of energy received during one rotation of the charge carrier disk 14 is left as energy for raising the charge to a higher potential.
Since there are six charge carriers 4, each charge carrier 4 has 9.5 μJ of energy left, and moves from the high potential source 1 to the recovery electrode 3 three times in one rotation, so that each time. The energy left in is 3.17 μJ. That is, the energy W left to raise the charge q (-30.8 nC) to a higher potential is 3.17 μJ. At this time, the recoverable potential V is calculated by the following equation and becomes 103V.

尚、式中、Qは電荷搬送体に注入された電荷量、Rは 搬送された電荷の内の回収電極３に回収された電荷の割合、Nは回収電極の数、Mは電荷搬送体の数、及びRは電荷搬送体円板の１秒当たりの回転数である。
ここで、q=-30.8nC、r=0.90、n=3、m=6、R=1.00(60rpm)を代入すると、電流Aは、0.50μAになる。 On the other hand, the current A obtained by this device is calculated by the following equation.

In the formula, Q is the amount of charge injected into the charge carrier, R is the ratio of the charge recovered to the recovery electrode 3 among the transferred charges, N is the number of recovery electrodes, and M is the charge carrier. The number and R are the number of revolutions per second of the charge carrier disk.
Substituting q = -30.8nC, r = 0.90, n = 3, m = 6, R = 1.00 (60rpm), the current A becomes 0.50μA.

大きな出力ではないが、装置内を真空にすれば、放電が発生しないので、高電位源１と電荷搬送体４の間隔を、5.0mmより、機械的に製造可能な、例えば、0.2mmにして注入電荷量を25倍とし、また、電荷搬送体円板１４の回転数を、ADBボールベアリングの許容値30,000rpmまで、500倍に上げることができる。その結果、出力は、12500倍の、0.64Wになると期待できる。
なお、機械的に問題なければ、電荷搬送体４を高電位源１に接触させて、注入電荷量をさらに上げることもできる。 As a result, the electric output P generated by the device is calculated by the following equation and becomes 51 μW.

Although it is not a large output, if the inside of the device is evacuated, no discharge will occur. Therefore, the distance between the high potential source 1 and the charge carrier 4 is set to 0.2 mm, which can be mechanically manufactured from 5.0 mm. The amount of injected charge can be increased 25 times, and the number of revolutions of the charge carrier disk 14 can be increased 500 times up to the allowable value of 30,000 rpm for ADB ball bearings. As a result, the output can be expected to increase 12500 times to 0.64W.
If there is no mechanical problem, the charge carrier 4 can be brought into contact with the high potential source 1 to further increase the injected charge amount.

The electrostatic force acting on the charge carrier 1 charged at -30.8 nC (hereinafter, total electrostatic force) moving from the high potential source (+ 8 kV) 1 of Example 1 shown in FIG. 10 to the recovery electrode (0 V) 3. The electric field formed by both electrodes is the mirror image force acting between the electrostatic force acting on the charged charge (hereinafter referred to as electric field electrostatic force) and the electric charge, the high potential source electrode 1, and the recovery electrode 3. It is a sum.
Therefore, I tried to find the mirror image power. Specifically, not only the recovery electrode 3 but also the high potential electrode 1 is grounded, and when the charge carrier 4 charged to -30.8 nC moves between them, the electrostatic force acting on the electrostatic force is applied to the first embodiment. Similar to the above, the simulation was performed by the two-dimensional difference method. The result is shown in FIG.
From the figure, it can be seen that immediately after passing through the high potential source electrode 1, a weak reverse mirror image force that pulls the charge carrier 4 to the left acts, but after that, a strong forward mirror image force that pulls the charge carrier 4 to the right acts.

The mirror image force, the total electrostatic force shown in FIG. 10, and the difference thereof are shown in FIG.
From FIG. 13, it can be seen that the difference between the mirror image force and the total electrostatic force is almost constant. This force is an electric field electrostatic force in which the electric field formed by the potential of the high potential source 1 acts on the charged charge of the charge carrier 4, and acts in the left direction, that is, in the pullback direction. Although it is smaller than the value calculated by the Coulomb force formula, it is because the shape of the charge carrier 4 is not a sphere but a horizontal gutter shape (Non-Patent Document 2). Therefore, if this electric field electrostatic force is not present, the charge carrier 4 is more strongly attracted to the right, and the amount of power generation increases.
However, in order to inject a large amount of electric charge into the charge carrier 4, it is essential to raise the potential of the high potential source 1.

Therefore, in order to be able to inject a large amount of electric charge and exert a strong mirror image force to the right, the device is configured by placing a shield electrode 5 with a width of 19.2 mm on the right 33 mm of the high potential source 1 and grounding it. The recovery electrode 3 having a width of 32 mm was placed on the right side 33 mm.
In this configuration, the charge carrier 4 charged at -30.8 nC receives the electrostatic force received from the high potential source 1 (+ 8 kV) through the shield electrode 5 (0 V) to the recovery electrode 3 (0 V). Obtained by simulation. The result is shown in FIG. Since the electrostatic force received in the shield electrode 5 is not large, it is omitted (see FIGS. 3 and 4).

Immediately after passing through the shield electrode 5, the charge carrier 5 loses 1.6 μJ of energy due to a weak reverse mirror image force in the left direction. However, after that, an energy of 105.3 μJ is given by a strong forward mirror image force in the right direction. That is, during this period, energy of 103.7 μJ is obtained.
As described in Example 1, the energy obtained between the high potential electrode 1 and the grounded recovery electrode 3 was 21 μJ. Therefore, the energy obtained by the charge carrier 4 from the high potential electrode 1 through the shield electrode to the recovery electrode 3 is 124.7 μJ.

In the power generation device of the first embodiment shown in FIG. 11, three sets of the high potential source 1 and the recovery electrode 3 are arranged on the upper and lower electrode plates 13 and 15, but in this embodiment, the high potential source is as shown in FIG. 1. Two sets of shield electrodes 5 and recovery electrodes 3 were arranged.
In this configuration, the energy received by each charge carrier 4 during one rotation of the charge carrier disk 14 is 249.6 μJ, and the total of the six is 1498 μJ.
On the other hand, the energy lost during this period is 321J when the rotation speed of the charge carrier disk 14 is 60 rpm, but the acting electrostatic force becomes stronger and the rotation speed increases, so that the air resistance becomes larger.
Then, at 120 rpm, the air resistance is quadrupled to 2.71 mN, and the energy required to rotate the charge carrier disk 14 times is 1213 μJ. As a result, the energy left to increase the potential of the carrier charge is 285 μJ. Since there are six charge carriers 4, each charge carrier 4 has a value of 47.5 μJ. Then, twice in one rotation, the high potential electrode 1 and the shield electrode 5 pass through to the recovery electrode 3, so that 23.8 μJ is left in the first time, and the charge of -30.8 nC is from 0 V to -771 V. Is pulled up to.
The current at this time is calculated from the formula 3 and becomes 0.67 μA, and the output becomes 0.52 mW from the formula 4.
As described in the first embodiment, if the distance between the high potential source 1 and the charge carrier 4 is shortened to 0.2 mm and the rotating chamber of the charge carrier disk 14 is evacuated, the output is 6250 times as high as 3.25 W. Go up.

Although the electrostatic generator has been described above, it can also be an electrostatic motor.
That is, in this case, as shown in FIG. 16, after placing the high potential source 1 for charge injection on the upper and lower electrode plates, a plurality of shield electrodes 5 are placed and grounded. In this way, when passing through the high potential source 1, a strong mirror image force acts counterclockwise one after another on each of the grounded shield electrodes 5 on the charge carrier 1 into which a large amount of charge is injected, and the charge carrier circle. The plate 14 receives a strong rotational force.
At this time, if the charge carrier disk 14 and the central shaft 16 are integrated, the external rotating body connected to the central shaft 16 can be rotated.
At this time, FIG. 17 shows the electrostatic force acting on one charge carrier 4 on the charge carrier disk.

In the third embodiment, one high potential source 1 and a large number of shield electrodes 5 are arranged on the circumference to form an electrostatic motor, but when these are arranged in series, an electrostatic accelerator is obtained. That is, in this case, as shown in FIG. 18, a left-side open cylindrical charge carrier 4 is used instead of the gutter-shaped charge carrier, and the shield electrode 5 grounded with the high potential source 1 is also flat to cylindrical. By changing the shape, it becomes a more powerful accelerator.
In the figure, reference numeral 200 denotes a fixed cylinder, for example, a barrel that holds them.
If the cylindrical charge carrier 4 is used as a bullet, it becomes an electrostatic gun, and if it is placed on a spacecraft and a cylindrical charge carrier 4 of an appropriate weight is ejected out of the spacecraft, it becomes a spacecraft accelerator (that is, , Engine).

As described above, mirror image force-driven electrostatic application devices (electrostatic generators, electrostatic motors, and electrostatic accelerators) that use the rechargeable charge injection method are external when using an electlet as a high potential source. Since it does not require the supply of energy or consumables, it is particularly effective when used for traffic signals, wireless base stations, hospital power supplies, and commercial refrigerators that must not be stopped due to a power outage.
In addition, the life of the electret is said to be 100 years, so it is effective when used for spacecraft and artificial hearts that are sealed inside the body and travel for decades outside the solar sphere.

1: High potential source (high voltage electrode, high potential electret, ferroelectric)
2: Counter electrode 3: Charge recovery electrode 4: Charge carrier 5: Shield electrode 6: Charge recovery electrode condenser 7: Reverse mirror image power arrow 8: Forward mirror image power arrow 13: High potential source, shield electrode and Insulating support 14 that supports the charge recovery electrode 14: Charge carrier disk that holds a plurality of charge carriers 15: High potential source, shield electrode, and insulating support that supports the charge recovery electrode 16: Charge carrier circle Plate central axis 20: Cylindrical high potential source, cylindrical member holding cylindrical shield electrode

Claims (5)

A conductive charge carrier that is charged and has an asymmetric shape in the front-back direction of movement is electrically changed from a high-potential source that is an electrode and has a high potential to a higher potential than the charge of the charged charge carrier. An electrostatic generator that forwards and generates electricity toward a certain charge recovery electrode.
By grounding the charge carrier while bringing the charge carrier close to or in contact with the high potential source, the charge carrier is charged with a charge having a polarity different from that of the high potential source to be charged, and the asymmetrical state. A forward mirror image generated between the charge carrier and the charge recovery electrode based on the asymmetrical shape, rather than an inverse mirror image force generated between the charge carrier and the electrode of the high potential source based on the shape. A mirror image force-driven electrostatic generator that drives the charge carrier in the forward direction by increasing the force and lifts the charged charge to a higher potential electrically. In claim 1, the conductive charge carrier having an asymmetrical shape has a substantially box shape in which the opposite side in the moving direction is open, and at least one of the upper and lower horizontal plates thereof is a mirror image that approaches or contacts the high potential source. Power-driven electrostatic generator. In claim 1, a mirror image drive type having a grounded shield electrode between the high potential source and the recovery electrode that blocks the electrostatic force acting on the charged charge of the charge carrier in the electric field formed by the high potential source. Electrostatic generator. The electrostatic motor according to claim 1, wherein a high potential source and a plurality of shield electrodes are arranged on the circumference. The electrostatic accelerator according to claim 1, wherein a high potential source and a plurality of shield electrodes are linearly arranged.

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