JP2021108524A - Image force driven electrostatic application apparatus and charging device of charge carrier body - Google Patents

Abstract

To solve the problem that an image force driven electrostatic generator driving a charge carrier body with an image force mainly applying between the carrier body and a collection static electrification from a charging electrode charging an electric charge to the charge carrier body to a collection electrode collecting the electric charge transported has a small driving force because an inverse direction image force is also applied between the carrier body and the charging electrode, as a result of which an amount of power generation is also small.SOLUTION: A single layer electret which does not have a back plate electrode is used as a charging potential source instead of a charging electrode.EFFECT: Since an inverse direction image force is eminimated, an electrostatic force for driving a charge carrier body is substantially increased.SELECTED DRAWING: Figure 13

Description

The present invention relates to a method of charging a charge carrier of a mirror image force driven electrostatic application device (generator, motor, accelerator) mainly using an asymmetric mirror image force as a driving force.

Normally, an electrostatic application device such as an electrostatic generator, an electrostatic motor, or an electrostatic accelerator charges a charge carrier with an electric charge, and is driven by an electric field around the charge carrier by an electrostatic force acting on the charged charge carrier. Has been done. Therefore, the larger the amount of charge charged in the charge carrier, the greater the output and performance. Furthermore, even with the same amount of charge, the stronger the acting electrostatic force, the greater the output and performance.

Therefore, several methods have been proposed as a method for charging the charge carrier, but at present, the largest amount of charge can be obtained as described in Patent Applications 2019-201081 and Non-Patent Document 2. It is a rechargeable charge injection method. In this method, as shown in FIG. 1, the flat plate type high potential charging electret 1 and the upper and lower flat plate portions 22 of the conductive horizontal trough type charge carrier 2 face each other to temporarily form a capacitor. By grounding the charge carrier 2 at the contact terminal 3, the charge carrier 2 is charged (charged) with a charge having a polarity different from that of the electret 1 injected into the charge carrier 2. Reference numerals 4, 5, and 6 are recovery electrodes, capacitors, and contact terminals of a mirror image force-driven electrostatic generator, which will be described later.

Since the parallel flat plate capacitor is charged, the larger the electric capacity of the capacitor, that is, the smaller the distance between the flat plate electret 1 and the upper and lower flat plates 22 of the charge carrier 2, the greater the amount of charge charged to the charge carrier 2. .. An example thereof is shown in FIG. This is the simulation result obtained under the following conditions. That is, the width of the charging electret 1 is 19.2 mm, the thickness is 0.025 mm, the surface charge density is 0.425 mC / m ² , the width of the charge carrier 2 is 10.2 mm, the height is 10.4 mm, the depth is 60.0 mm, and the plate. When the thickness is 0.2 mm.
It is clear that the narrower the distance between the electret 1 and the upper and lower flat plates 22 of the carrier, the sharply increases the amount of charge charged, especially when the distance between the electret 1 and the upper and lower flat plates 22 is 0.5 mm or less. The actual material of the electret is Teflon (registered trademark) (relative permittivity 2.1), and the thickness is often 50 μm. Therefore, the thickness was 52.5 μm and the relative permittivity was 2.1, and the calculation was performed by replacing the air layer with the same capacitance with a thickness of 25 μm and a relative permittivity of 1.0. The same applies hereinafter.

As long as the electret 1 and the charge transfer 2 are stationary, there is no mechanical problem even with a small gap of 0.5 mm or less. Move at high speed. In the case of FIG. 1, it moves toward the recovery electrode 4 in the direction of the arrow. Therefore, in order to prevent contact between the two, this gap should be as wide as possible.

Further, in the same patent, when the distance between the injection (charging) electret 1 and the upper and lower flat plates 22 of the charge carrier 2 is 0.125 mm and the surface potential of the injection (charging) electret is 1.2 kV, the dielectric thickness of the electret 1 ( It is stated that the thinner the electret layer (thickness of the electret layer divided by the relative permittivity of the material), the greater the amount of charge injected (charged). The simulation result is shown in FIG.

At present, the one with the same amount of charge and the largest acting electrostatic force is the mirror image force driven electrostatic generator described in Patent Application No. 2019-049237. As shown in FIG. 4, the mirror image force is an electrostatic force acting on the electric charge 8 when it approaches the ground conductor 7 even though there is no external electric field. It is called a mirror image force because it is the same as the Coulomb force that acts when charges of different polarities are present at the same distance on the opposite side of the conductor 7.

Usually, in the description of the mirror image force, the electric charge is described as a point charge or a spherically charged body, but a mirror image force is also generated in a non-spherical charged body as well. It was discovered by the applicant that if the shape of the charged body is symmetrical, the intensity of the mirror image force does not change even if the direction is reversed, but if the shape is asymmetrical, the intensity changes significantly when inverted. (Non-Patent Document 1). For example, when the horizontal gutter-shaped charge carrier 2 shown in FIG. 2, the amount of charge is 1 μC, the distance from the grounded conductor plate 7 is 1.0 mm, and the opening is directed toward the grounded conductor plate 7. The mirror image force acting on the carrier 2 is 32.4N, and conversely, when the bottom surface is directed to the ground conductor plate 7, it is more than doubled to 69.0N (see FIG. 5). This phenomenon is hereinafter referred to as asymmetric mirror image force.

A novel electrostatic power generation method using an asymmetric mirror image force as a driving force of the charge carrier 2 is described in Patent Application No. 2019-049237. However, in that example, a charging electrode is used instead of a charging electret (Patent Application No. 2019-049237 uses a different expression from the injection electrode, but is the same). That is, in FIG. 1, the symbol 1 is the charging electrode, and + 8.0 kV is applied. At this time, a charge of -30.85 nC is charged to the charge carrier 2. The width of the charging electrode 1 and the recovery electrode 4 is 19.2 mm, and the distance between the two is 31.5 mm. At this time, FIG. 6 shows the result of simulating the electrostatic force received by the charge carrier 2 before passing through the charging electrode 1 and reaching the recovery electrode 4.

From FIG. 6, from the time when the charging electrode 1 is passed through to the middle, the charge carrier 2 is subjected to an electrostatic force in the left direction indicated by a minus sign, that is, in the direction opposite to the target traveling direction. , From the intermediate point, it changes to the positive-signed electrostatic force to the right, and it can be seen that the total electrostatic force to the right is larger.

According to the simulation of the present invention, when the gap between the charging electret and the charge carrier is 1 mm and the dielectric thickness of the electret is 0.125 mm, the charge density of the charged charge carrier is 11 of the charge density of the electret. However, if the dielectric thickness of the electret is 10 mm, the charge density of the charged charge carrier is 90% or more of the charge density of the electret.
Further, in the mirror image force drive type electrostatic generator described later, when the back electrode of the charging electret is removed, the electrostatic energy acting on the charge carrier is 8.3 times that in the case where the charge carrier is not removed.

[Non-Patent Document 1] [Asymmetric Electrostatic Forces and a New Electrostatic Generator], Nova Science Publishers, New York, 2010
[Non-Patent Document 2] Proceedings of the 2019 Annual Meeting of the American Society of Electrostatics A-4

A first object of the present invention is to establish a novel charging method capable of sufficiently charging a stationary charging electret and a charge carrier even if the distance between them is wide, in an electrostatic application device that charges and uses the charge carrier. Is.
The second purpose is to establish a novel usage of electrostatic generators, electrostatic motors, and electrostatic accelerators that can obtain higher output and performance even if the charge amount of the charge carrier is the same.

Means to solve problems

The first object of the present invention can be achieved by setting the dielectric thickness (value obtained by dividing the layer thickness by the relative permittivity) of the charging electret to be equal to or larger than the gap between the charging electret and the charge carrier. The second purpose can be achieved by removing the back electrode of the charging electret to make it a single-layer electret.

According to the simulation of the present invention, when the gap between the charging electret and the charge carrier is 1 mm and the dielectric thickness of the electret is 0.125 mm, the charge density of the charged charge carrier is 11 of the charge density of the electret. However, if the dielectric thickness of the electret is 10 mm, the charge density of the charged charge carrier is 90% or more of the charge density of the electret.
Further, in the mirror image force drive type electrostatic generator described later, when the back electrode of the charging electret is removed, the electrostatic energy acting on the charge carrier is 15 times that when the charge carrier is not removed.

FIG. 1 is an elevational view of a mirror image force driven electrostatic generator having a charging electret. FIG. 2 is a graph showing the amount of charge charged by the charge carrier with respect to the distance between the upper and lower horizontal plates of the charge carrier and the charging electret. FIG. 3 is a graph showing the charge charge amount of the charge carrier with respect to the dielectric thickness of the charge electret layer. FIG. 4 is an explanatory diagram of the mirror image force. FIG. 5 is a diagram showing a simulation result of an asymmetric mirror image force generated between a horizontal gutter type charged body and a ground conductor. FIG. 6 is a graph showing the total electrostatic force received by a charged charge carrier between the charging electrode and the recovery electrode in a mirror image force driven electrostatic generator using a charging electrode. FIG. 7 is a schematic view showing how an induced charge is generated on the surface of a conductor close to a charged body. FIG. 8 shows the physical quantity required to calculate the induced charge density on the surface of the conductor close to the charged body. FIG. 9 is a graph showing the results of calculation and simulation of the induced charge density on the surface of the conductor approaching the charged body. FIG. 10 is a graph showing the dielectric thickness of the charging electret and the density of charges induced on the conductor surface when the distance between the charging electret and the ground conductor plate is changed. FIG. 11 is a graph showing the amount of charge charged to the charge carrier in a two-layer electret having a back electrode and a single-layer electret not having the back electrode. FIG. 12 is a schematic view of the device when there is a recovery electrode through which the charge carrier has passed on the left side of the charging electret. FIG. 13 is a graph showing the electrostatic force acting on the charge carrier when the charge charge amount is the same for the charge electrode and the charge single layer electret. FIG. 14 is a schematic view of a device in which the shape of the charge carrier is a regular quadrangular prism and the position of the front recovery electrode is moved to the left of the single-layer charging electret. FIG. 15 is a graph showing the result of simulating the electrostatic force acting on the charge carrier with the device shown in FIG. FIG. 16 is a graph showing the electrostatic force acting on the charge carrier when the charge density of the charging electret is set to the maximum of 2.0 mC / m ^2. FIG. 17 is a perspective view of a mirror image force-driven electrostatic generator in which a charge carrier circulates between a charging electret and a recovery electrode. FIG. 18 is a mesh diagram for simulating the electrostatic force acting on the charge carrier by the two-dimensional difference method.

Form for carrying out the invention

In a so-called mirror image force driven electrostatic generator or the like, the purpose of increasing the driving force and the amount of power generation of the charge carrier was achieved by using a single-layer electret having no back electrode as a charging potential source.

Normally, the electret 1 is manufactured by charging a special Teflon (registered trademark) layer 11 coated on a grounded back electrode layer 12, as shown in FIG. The polarity of corona charging is usually negative, but here it is positive for easy understanding. The thickness of the Teflon® layer is 50 μm or 75 μm. A positive charge indicated by a white circle is fixed on the surface of the Teflon (registered trademark) layer, and an electrostatically induced negative charge (electron) indicated by a black circle is present on the back electrode 12. Lines of electric force indicated by arrows run from the positive charge to the negative charge. Since the Teflon (registered trademark) layer is thin, there are almost no electric lines of force going out of the electret (Fig. 7 (A)).

In this state, when the grounded metal plate, for example, the horizontal plate 22 of the charge carrier 2 approaches the electret layer 11, a part of the electric lines of force generated from the positive charge of the electret changes its direction. Then, it enters the metal plate 22 and attracts negative charges (electrons) there by electrostatic induction. This becomes the charging charge. On the other hand, the negative charges (electrons) on the back electrode flow to the ground and disappear (Fig. 7 (B)).

When the grounded gold plate 22 approaches further, the proportion of electric lines of force emitted from the positive charge of the electret and entering the metal plate 22 also increases, and the negative charge (electrons) of the metal plate 22 further increases (FIG. FIG. 7 (C)). This is the result shown in FIG. 2, that is, when the distance between the charging electret 1 and the upper and lower horizontal plates 22 of the charge carrier 2 is narrowed, the charge charge amount of the charge carrier increases.
No matter how close they are, the negative charge density of the metal plate 22 does not increase above the positive charge density of the electret (FIG. 7 (D)).

Although described qualitatively above, physically speaking, the ratio of the negative charge (electrons) left on the back electrode 12 of the electret 1 and the negative charge (electrons) generated on the adjacent metal plate 22 is the electret 1. It is determined by the ratio of the electric capacity of the Teflon (registered trademark) capacitor formed by the front and back electrodes 11 to the electric capacity of the air condenser formed by the electret surface and the approaching metal plate. That is, when the metal plates approach each other, the distance from the electret becomes small, and the electric capacity thereof increases, the amount of charge charged increases.

FIG. 2 is a simulation result showing the charge charge amount of the charge carrier 2, and the charge density at the center of the upper and lower parallel plates 22 of the charge carrier 2 at that time is a dotted line in FIG. From this graph, even if the distance between the charging electret 1 and the vertical parallel plate 22 of the charge carrier 2 is brought close to 0.125 mm, the charge density induced in the center of the vertical parallel plate 22 is 0.071 mC / m ² . It can be seen that the charge density of the charging electret 1 ^{reaches only 16.7% of 0.425 mC / m 2.} Furthermore, at an interval of 1.0 mm, it is 0.012 mC / m ² , which is only 2.8%. It is an object of the present patent application that the charge carrier 2 is charged with 50% or more of the charge density of the charging electret 1 even if the interval is sufficiently set, for example, 1.0 mm.

For that purpose, the distance between the charging electret 1 and the grounding conductor plate corresponding to the vertical parallel plate 22 of the charge carrier 2 and the layer thickness of the electret are variously changed to obtain the density of the charge induced in the conductor plate. There is a need. At that time, the induced charge density may be obtained by capacitance calculation instead of performing a time-consuming simulation. Therefore, we will use the capacitor formula to obtain the charge density and compare it with the simulation results.

The physical quantity required to perform the calculation is shown in FIG. The charging electret 1 is composed of an insulating resin, a Teflon (registered trademark) layer 11 and a back electrode layer 12. The thickness of the electret layer is t, the capacitance is C1, and the relative permittivity is ε1. On the other hand, the thickness of the charging electret 1 and the air capacitor formed by the ground conductive plate corresponding to the upper and lower horizontal plates 22 of the charge carrier 2 is d, the electric capacity thereof is C2, and the relative permittivity is ε2. Let V be the potential of the charging electret, Q be the amount of charge, and σ be the charge density. Further, the induced charge of the grounded back electrode is Q1, the charge density is σ1, the induced charge amount of the grounded conductive plate is Q2, and the charge density is σ1. The area of the back electrode, the electret layer, and the ground conductive plate is S in common. Also, let the permittivity of the vacuum be ε0.

テフロン（登録商標）層の電気容量C1、および、空気層の電気容量C2は、各次式で計算される。式中、ε0は真空の誘電率である。

接地背面電極と接地導電板に誘起される電荷量Q１とQ2は、各次式で計算される。

数式4と5から次式の関係が導かれる。

故に、Q1は次式で求められる。

これを、上記数式1に代入して整理すると次式となる。

ここに、上記C1、C2を代入して整理すると次式となる。

先に述べたように、厚さ52.5μm、比誘電率2.1のテフロン（登録商標）層に変えて、静電容量が同じになる、厚さ25.0μm、比誘電率1.0の空気層を使用しているので、ε1＝ε2＝1.0である。故に、数式9は、整理すると次式となる。

故に、導電板に誘起される電荷量Q2は、次式で求められる。

電荷密度は、電荷量を面積で割ったものなので、導電板に誘起される電荷の密度は、次式で求められる。

ここで、表面電荷密度σは以下の式で表される。

よって、数式１２は、次のようになる。

エレクトレットの表面電荷密度σは、0.000425C/m²で、厚さｔは、0.000025mである。これらの値を、数式14に代入すると、次式となる。

The sum of the actual charge Q and the induced charges Q1 and Q2 have opposite signs, but are equal in absolute value as shown in the following equation.

The capacitance C1 of the Teflon (registered trademark) layer and the capacitance C2 of the air layer are calculated by the following equations. In the equation, ε0 is the permittivity of the vacuum.

The amounts of electric charges Q1 and Q2 induced in the grounded back electrode and the grounded conductive plate are calculated by the following equations.

The following equations are derived from equations 4 and 5.

Therefore, Q1 is calculated by the following equation.

Substituting this into the above formula 1 and rearranging it gives the following formula.

Substituting the above C1 and C2 here and rearranging them gives the following equation.

As mentioned earlier, instead of using a Teflon® layer with a thickness of 52.5 μm and a relative permittivity of 2.1, an air layer with a thickness of 25.0 μm and a relative permittivity of 1.0 with the same capacitance was used. Therefore, ε1 = ε2 = 1.0. Therefore, Equation 9 becomes the following equation when rearranged.

Therefore, the amount of charge Q2 induced in the conductive plate can be calculated by the following equation.

Since the charge density is the amount of charge divided by the area, the density of the charge induced in the conductive plate can be calculated by the following equation.

Here, the surface charge density σ is expressed by the following equation.

Therefore, the formula 12 becomes as follows.

The surface charge density σ of the electret is 0.000425 C / m ² , and the thickness t is 0.000025 m. Substituting these values into Equation 14 yields the following equation.

The density of charge induced in the ground conductor plate facing the electret, σ2, is a function of only the distance d between the electret and the conductor plate. The results of obtaining the conductor plate-induced charge density σ2 by inserting five types of intervals from d = 0.125 mm to 5.6 mm in Equation 15 are shown by dotted lines in FIG. It can be seen that it matches well with the solid line showing the simulation results.
That is, no programming effort or simulation calculation time is required, and the charge density σ2 induced in the ground conductor plate can be calculated instantly by the mathematical formula 14.

In Equation 14, when the surface charge density σ of the charging electret 1 is 0.000425 mC / m ² , the charge induced in the conductor plate is widely divided between the layer thickness t of the electret layer and the distance d between the electret and the conductor plate. The result of calculating the charge density σ2 of is shown in FIG. From FIG. 10, for example, when the interval d indicated by the one-point chain line is 1.0 mm and the dielectric thickness of the electret is 1.0 mm, the induced charge density σ 2 is the charge density σ of the electret = 0.425 mC / m ^2. It is 50%, 0.2125 mC / m ² , and when it reaches 10.0 mm, it becomes 91%, 0.386 mC / m ² , and at 100 mm, it rises to ^{0.421 mC / m 2, which is 99.1%.}
In the above description, the thickness of the Teflon (registered trademark) layer is t, but essentially, it is between the surface charge of the Teflon (registered trademark) layer and the heteropolar charge induced in the back electrode. The distance. Therefore, the same argument holds even when there is no back electrode and a heteropolar charge is present on the back surface of the Teflon (registered trademark) layer.

Further, it can be seen that when the dielectric thickness t is 100 mm or 1000 mm, the induced charge density is almost equal to the charge density of the electret regardless of the spread of the interval d.
A dielectric thickness of 100 mm is substantially equivalent to the absence of the back electrode 12. In this case, the electret forms an electric field with the recovery electrode 32 mm away and has a high potential.

Electrets usually have back electrodes. This is because it is necessary when the corona discharge occurs, but in fact, it is necessary after that. With the back electrode, as shown in FIG. 7 (A), the lines of electric force are closed inside the electret layer and do not go out, but without the back electrode, all the lines of electric force are outside. Head. In the external space, three or four cosmic ray ionized ions are floating per cubic centimeter. As a result, the electret charge attracts ions of different polarities by electrostatic force, so that the electret charge is neutralized. As a result, the life of the electret is shortened. Therefore, it is desirable to use an electret without a back electrode in a vacuum. Hereinafter, an electret without a back electrode will be referred to as a single-layer electret, and an electret having a back electrode will be referred to as a two-layer electret.

As described above, the induced charge density has been calculated based on the capacitor formula, but just in case, the charge charge amount of the single-layer electret was obtained by simulation, and the charge charge amount obtained by the double-layer electret shown in FIG. 2 was used. compare. The conditions are the same as in the simulation of FIG. The result is shown in FIG. From this figure, when a single-layer electret is used, the amount of charge charged to the transport electrode 2 is 1000 nC or more, which is significantly different from 100 nC or less of the double-layer electret, and unlike the double-layer electret, the distance between the electret and the transport electrode. It can be seen that even if the charge changes, it hardly changes.
Therefore, in order to keep a sufficient distance between the electret and the charge carrier and to charge the charge carrier to a large extent, a single-layer electret without a back electrode should be used.

In the single-layer electret, the Teflon (registered trademark) thin layer is charged by corona discharge in the atmosphere, replaced in a vacuum, the back electrode is peeled off, and the charged Teflon (registered trademark) thin layer is formed. It can be created by mechanically attaching it to an insulating layer of an appropriate thickness. Here, the reason why the Teflon (registered trademark) thin layer is used is to increase the charge density. With a thick Teflon (registered trademark) layer, the surface potential rises immediately and discharge begins, so a high charge density cannot be obtained. In addition, when the back electrode is peeled off from the charged Teflon (registered trademark) thin layer in the atmosphere, a corona discharge is generated during that time, and a charge having the opposite polarity to the charged charge adheres to the back surface of the Teflon (registered trademark) layer. Therefore, it is not possible to take a large distance between the front surface charge and the back surface charge.
A single-layer electret can also be made by hitting electrons into a thick Teflon (registered trademark) film with an electron gun (electron accelerator). Further, a high dielectric material in which polarization charges are generated on the front and back surfaces can also be used. The high dielectric is thick (400 μm) and has a very high surface charge density (1 C / m ² ), so even higher output can be expected.

Then, how will the electrostatic force acting on the charged charge carrier change when a single-layer electret is used as a charging source for a mirror image-driven electrostatic generator instead of the charging electrode? As the amount of charge charged increases significantly, the electrostatic force also increases, and as a result, the amount of power generation also increases. What happens if the charge charges are the same? In order to confirm these, it works on the charge carrier when ^{the charge density of the charging electret is 0.0125mC / m 2} so that the charge amount is the same as that of the charging electrode (8kV) and -30.85nC. The electrostatic force was simulated. .. Further, in the case of the charging electrode, a mirror image force acts between the charging electrode and the charge carrier in the left direction, that is, in the direction opposite to the target direction. There is no mirror image power that works for. However, in the actual device, a mirror image force in the left direction acts between the charge carrier and the recovery electrode before it has passed, so in this simulation, as shown in FIG. 12, the recovery that has passed has been performed. The simulation was carried out by adding the electrode 4'. The width of the recovery electrode 4'was the same as that of the recovery electrode 4, and the distance between the recovery electrode 4'and the charging electret 1 was 22.4 mm.

The simulation result is displayed in FIG. 13 side by side with the case of the charging electrode shown in FIG. In FIG. 13, in the case of the charging electrode, since the left mirror image force acting between the charging electrode and the charging electrode is strong while advancing to the right by about 10 mm immediately after passing through the charging electrode, it is pulled back to the minus, that is, to the left. Electrostatic force is working. On the other hand, in the case of a single-layer electret, the mirror image force with the passed recovery electrode 4'on the left is already weak due to the distance, and it acts on the charge carrier even immediately after passing through the electret. Even if the power is the same minus, it is weaker by that amount.

Even in the case of the charging electrode, the mirror image force in the left direction becomes weaker as it approaches the recovery electrode 4 on the right side, so that the electrostatic force in the right direction has almost the same strength as in the case of the single-layer electret. Details of this will be presented at the American Society of Electrostatics in 2020.
When the energy given by the applied electrostatic force until the charge carrier 2 passes through the charging source 1 and reaches the recovery electrode is calculated according to FIG. 13, it is 6.2 μJ in the charging electrode, whereas it is a single layer. In the electret, it is 51.9 μJ, which is 8.3 times higher.

Comparative example

In the case of a single-layer electret, if the front recovery electrode 4'is further moved away and the mirror image force in the left direction acting on the charge carrier 2 is further weakened, the shape of the charge carrier 2 will be similar to that of a horizontal gutter. It is considered that the symmetrical shape may be used instead of the asymmetrical shape.
Therefore, as shown in FIG. 14, the shape of the charge carrier 2 is a regular quadrangular prism, the position of the front recovery electrode 4'is moved to the left of the single-layer charging electr, 41.6 mm, and the other conditions are the same. , The electrostatic force acting on the charge carrier 2 was simulated. The result is shown in FIG.

From FIG. 15, it can be seen that under this condition, the electrostatic force acting on the charge carrier 2 is almost negative until it reaches the vicinity of the recovery electrode 4. The reason for this is that since the shape is symmetrical, both the asymmetric electrostatic force effect (Non-Patent Document 1) and the asymmetric mirror image force effect (see FIG. 5) disappear, and a strong electrostatic force is applied to the left plate of the carrier 2. This is because of the fact. Symmetrical charge carriers are attractive because they are easy to make, but they are unlikely to be usable.

In Example 2, the charge density of the charged single-layer electret was set to 0.0125 mC / m ^{2 in} order to match the charge amount of the charging electrode with -30.85 nC. However, at present, the highest available charge density has reached ^{2.0 mC / m 2.} In this case, how much will the electrostatic force acting on the charge carrier increase? And how much power can we expect at that time? To confirm this point, the charge density of the electret ^{was changed from 0.0125 mC / m 2} to 2.0 mC / m ² and the electrostatic force acting on the charge carrier was simulated. The other conditions were not changed as in Example 2.

First, the amount of charge charged was determined. It became -4911.3nC. With this amount of charge, the electrostatic force acting on the charge carrier 2 was simulated in the same manner as in Example 2. The result is shown in FIG. Since the single-layer electret 1 without the back electrode 12 is the charging source, the electrostatic force applied to the charge carrier 2 is negative immediately after passing through the charging single-layer electret 1 for about 9 mm, as in the second embodiment. there were.

Even so, after passing the midpoint to the recovery electrode 4, the right-pointing mirror image force acting during that point becomes large, and the total electrostatic force becomes positive. The energy obtained by the charge carrier 2 from the charging single-layer electret 1 to the recovery electrode 4 is calculated from FIG. 16 to be 0.175J. Since the amount of electric charge to be transferred is 4.91 μC, if the inside of the device is vacuum and there is no air resistance, the electric charge carrier disk 14 is magnetically levitated, and there is no mechanical friction, this energy W is an electric charge. It can be used to raise q to a higher potential V. This potential becomes 35,700V by the following equation.

Since it was found that one charge carrier 2 can easily obtain the energy from the charging single-layer electret 1 to the recovery electrode 4 once, a large number of charge carriers 2 can be used many times from the charging electret 1. Let's calculate the energy obtained when reaching the recovery electrode 4, that is, the electric output. Therefore, the electrostatic power generator shown in FIG. 17 is assumed.

In FIG. 17, symbol 1 is a charging electret, symbol 2 is a charge carrier, symbol 4 is a recovery electrode, symbol 14 is a rotatable charge carrier disk on which the charge carrier 2 is mounted, and symbols 13 and 15 are. A fixed charge recovery disk in which a charge electret 2 and a recovery electrode 4 are installed at the same positions facing each other, symbol 16 is a rotation axis.
Six gutter-shaped charge carriers 2 having a length of 60 mm are arranged at intervals of 60 degrees on a charge carrier disk 14 having a radius of 100 mm at 35 mm to 95 mm from the center. The width and height of the charge carrier 2 are 10 mm. The center of the length of the charge carrier 2 is 65 mm from the center, and therefore its circumference is 408 mm. Place four pairs of charging electret 1 and recovery electrode 4 every 102 mm. The distance between the front recovery electrode 4'and the charging electret 1 is 20 mm, the width of the charging electret 1 is 20 mm, the distance to the recovery electrode 4 is 30 mm, and the width of the recovery electrode 4 is 30 mm. The distance between the top and bottom and the charge recovery disc is 20 mm.

20cm×20cm、厚さ2cmのＣＤカセットのような装置で、2ｋWも発電できるので、該単層エレクトレットを充電源とする鏡像力駆動型静電発電機は、あらゆる分野に応用できる可能性がある。 When one charge carrier 2 makes one rotation, it passes through the charging electret 1 and the recovery electrode 4 four times, so that the amount of charge transferred and recovered during that time is
4.91 μC × 4 = 19.64 μC. Since there are six charge carriers 2 on the charge carrier disk 14, the amount of charge carried when the charge carrier disk 14 makes one rotation is 19.64 μC × 6 = 117.84 μC.
Assuming that the maximum rotation speed of the ball bearing used is 30,000 rpm, the rotation speed of the charge carrier disk 14 is 500 rotations per second. Therefore, the amount of charge transferred per second is 117.84 μC × 500 = 58920 μC, that is, 0.059 A. As a result, the amount of power generation P is 2096.9232W, which is about 2kW, because it is calculated by the product of the current i and the voltage V (the following equation).

A 20 cm x 20 cm, 2 cm thick CD cassette-like device can generate as much as 2 kW, so a mirror image-driven electrostatic generator using the single-layer electret as a charging source has the potential to be applied in all fields. ..

Hereinafter, the calculation method by the two-dimensional difference method used in the present invention will be described by taking as an example the case where the charge carrier 2 is charged with an electric charge and exits from the charging source (electrode, electret) 1.
FIG. 18 shows a mesh diagram around the charge carrier 2. In the figure, the symbol 1 represents a charging electrode, and the symbol 2 represents a charge carrier. Further, although not shown, a grounded recovery electrode 4 is arranged on the right side of the charge carrier 2. The injection terminal 3 is omitted.
In the two-dimensional difference method, first, the entire symmetrical region, that is, the entire region shown in FIG. 1 is divided into fine meshes. However, if the entire region is divided into small pieces, the calculation time becomes very long. Therefore, the width of the mesh is made fine in the main part, in this case, around the charge carrier 2, and in the distance, around the recovery electrode 4. Specifically, the charges are set to 0.100 mm, 0.200 mm, 0.400 mm, and 1.600 mm from the periphery of the charge carrier 2 to a distance, and are gradually expanded.

Then, as shown in FIG. 18, each grid point (intersection of the mesh) is numbered serially, and the potential V of each grid point is calculated as the average value of the potentials of the left, right, top, and bottom grid points. For example, the potential V105 of the grid point 105 is calculated by the following equation 1 based on the potentials V104, V106, V88, and V122 of the grid points 104, 106, 88, and 122 on the upper, lower, left, and right sides.

通常、２０００個程度ある格子点にこの式が適用され、この多元連立一次方程式を解くことで、全格子点の電位が求められる。
ここで、充電電極１の電位は、+8.0kV、とし、回収電極４の電位は、接地されているので0Vとする。電荷搬送体２に含まれる格子点の電位は、電荷搬送体２が導体なので、全て等しいものとする。

Normally, this equation is applied to about 2000 lattice points, and the potentials of all the lattice points can be obtained by solving this multiple simultaneous linear equations.
Here, the potential of the charging electrode 1 is + 8.0 kV, and the potential of the recovery electrode 4 is 0 V because it is grounded. The potentials of the lattice points included in the charge carrier 2 are all equal because the charge carrier 2 is a conductor.

次に、第５面の表面電荷密度σ₅は、次式で計算される。同式においてε_０は真空の誘電率である。 The surface of the charge carrier 2 has 30 rectangular surfaces (regions) having an ordinal number of 0.1 mm in width and 60 mm in depth. _{The electric field E 5 on} the surface of the fifth surface is calculated by the following equation. In the same equation, h is the height of the mesh, which is 0.1 mm.

Next, the surface charge density σ ₅ of the fifth surface is calculated by the following equation. In the same equation, ε ₀ is the permittivity of vacuum.

次に、第５面の電荷量q₅は次式で計算される。同式においてS_５ は第５面の面積である。

電荷搬送体２の電荷の総量は、第１面から第３０面迄の電荷量を合算して求められる。

Next, the charge amount q _{5 on} the fifth surface is calculated by the following equation. In the same equation, S ₅ is the area of the fifth surface.

The total amount of charges in the charge carrier 2 is obtained by adding up the amounts of charges from the first surface to the thirtieth surface.

電荷搬送体２に右方向に作用する静電力F_R は次式で求められる。

一方、電荷搬送体２に対し、左方向に作用する静電力F_L は次式で求められる。

尚、電荷搬送体２の上下方向に働く静電力は、電荷搬送体２の形状が上下対称で、且つ当該電荷搬送体２が、充電電極対１と回収電極対４の、各上下真ん中に置かれている為、上下等しく、相殺され、ゼロになる。
よって、電荷搬送体２に作用するトータルの静電力F_Tは次式で計算される。

尚、充電エレクトレットの場合は、その各格子点に、電位に替えて、電荷が与えられる。充電電極１と回収電極４を固定し、電荷搬送体２の位置を右に順次移動することで、充電電極1と回収電極4間で、該帯電電荷搬送体２に作用する静電力がシミュレーションされる。 Next, the electrostatic force F ₅ acting on the fifth surface is calculated by the following equation.

_{The electrostatic force F R} acting on the charge carrier 2 in the right direction is calculated by the following equation.

On the other hand, with respect to the charge carrier 2, the electrostatic force F _L acting on the left is given by the following equation.

The electrostatic force acting in the vertical direction of the charge carrier 2 is such that the shape of the charge carrier 2 is vertically symmetrical, and the charge carrier 2 is placed in the center of each of the charge electrode pair 1 and the recovery electrode pair 4. Because it is laid, it is equal up and down, offset, and becomes zero.
Therefore, the total electrostatic force F _T acting on the charge carrier 2 is calculated by the following equation.

In the case of a charging electret, an electric charge is given to each lattice point instead of the electric potential. By fixing the charging electrode 1 and the recovery electrode 4 and sequentially moving the position of the charge carrier 2 to the right, the electrostatic force acting on the charged charge carrier 2 is simulated between the charging electrode 1 and the recovery electrode 4. NS.

1: Charging source (electrode, electret)
2: Charge carrier 3: Injection terminal 4: Recovery electrode 5: Condenser 6: Recovery terminal 7: Grounded conductor plate 8: Point charge 11: Electret resin layer 12: Electret back electrode 13: Top charge / recovery fixed circle Plate 14: Charge carrier rotating disk that holds the charged carriers arranged in a radial pattern 15: Lower charge / recovery fixed disk 16: Center (rotation) axis of the charge carrier rotating disk

Claims (9)

A conductive and asymmetrical charge carrier is brought close to the charging electlet, and at the same time, the charge carrier is grounded, and the charge is injected from the ground into the charge carrier by the grounding. In an electrostatic generator, an electrostatic motor, or an electrostatic accelerator that charges and drives the charge carrier with an electrostatic force acting on the charge, the charge is charged when the charge carrier is brought close to the charging electlet and charged. A charging device for a charge carrier, characterized in that the thickness obtained by dividing the layer thickness of the charging electlet by the relative dielectric constant of the charging electlet is increased from the distance between the electric charge carrier and the charge carrier. The charging device for a charge carrier according to claim 1, wherein the electret is a single-layer electret having a back electrode. The charging device for a charge carrier according to claim 1, wherein the electret is a single-layer electret having no back electrode. The charging device for a charge carrier in which the electret is a ferroelectric electret in claim 1. The charging device for a charge carrier according to claim 3, wherein the single-layer electret is produced by charging an electret resin thin layer having a back electrode by corona discharge in the atmosphere and peeling the back electrode in a vacuum. In claim 3, the single-layer electret is a charging device for a charge carrier, which is produced by driving electrons into an electret resin thin layer having no back electrode with an electron gun. In claim 3, the single-layer electret is an electric charge produced by charging an electret resin thin layer having a back electrode made of a low melting point material by corona discharge in the atmosphere, heating the electret, and melting the back electrode. Carrier charging device. From the charging source that charges the charge carrier to the recovery electrode that recovers the charge carried by the charge carrier, the charge is mainly generated by the mirror image force generated between the charge carrier and the recovery electrode. In a mirror image force-driven electrostatic generator, an electrostatic motor, or an electrostatic accelerator that conveys a carrier, an electrostatic generator, an electrostatic motor, or a static device, characterized in that a single-layer electric charge is used as the charging source. Electric accelerator. The electrostatic generator according to claim 8, wherein a high charge density electret is used as the single-layer electret, and the inside of the device of the electrostatic generator, the electrostatic motor or the electrostatic accelerator is evacuated. , Electrostatic motor or electrostatic accelerator.

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