JP2020141114A - Semiconductor manufacturing device and manufacturing method thereof - Google Patents

Abstract

To provide a semiconductor manufacturing device capable of controlling a push-up unit in an optimum sequence from the viewpoint of low stress on a die or high-speed pickup.SOLUTION: A semiconductor manufacturing device includes a push-up unit having a plurality of blocks in contact with a dicing tape and pushing a die from under the dicing tape, a collet that adsorbs the die, and a control unit configured to perform feedback control on a peeling model that reproduces the characteristics of the push-up unit such that the output of the peeling model follows the target values of the peeling amount of the die from the dicing tape and the bending stress of the entire die, and use the push-up amount which is control input to the peeling model as the push-up amount of the block of the push-up unit.SELECTED DRAWING: Figure 3

Description

The present disclosure relates to semiconductor manufacturing equipment and is applicable to, for example, a die bonder including a push-up unit.

Generally, in a die bonder in which a semiconductor chip called a die is mounted on the surface of a wiring board, a lead frame, or the like (hereinafter, collectively referred to as a board), the die is generally used by a suction nozzle such as a collet. The operation (work) of transporting the bonding material onto the substrate, applying a pressing force, and heating the bonding material to perform bonding is repeated.

Among the die bonding steps by a semiconductor manufacturing apparatus such as a die bonder, there is a peeling step of peeling a die divided from a semiconductor wafer (hereinafter referred to as a wafer). In the peeling step, the die is pushed up from the back surface of the dicing tape by a push-up unit, peeled one by one from the dicing tape held in the die supply unit, and conveyed onto the substrate using a suction nozzle such as a collet.

For example, according to Japanese Patent Application Laid-Open No. 2005-117019 (Patent Document 1), when the die to be peeled off is pushed up and peeled off from the dicing tape among a plurality of dies attached to the dicing tape, the suction piece (pushing up). The unit) is peeled from the dicing tape from the periphery of the die with low stress by pushing up the multiple-stage blocks in a pyramid shape by one drive shaft of the pusher.

Japanese Unexamined Patent Publication No. 2005-117019 JP-A-2017-224640

In recent years, with the advent of die laminated packages and 3D-NAND (three-dimensional NAND flash), wafers (dies) have become thinner. When the die becomes thin, the rigidity of the die becomes extremely low compared to the adhesive strength of the dicing tape. Therefore, for example, in order to pick up a thin die having a thickness of several tens of μm or less, it is necessary to reduce the stress applied to the die (reduction of stress).

In the above-mentioned push-up of a plurality of blocks by one drive shaft, the push-up amount of each block is mechanically limited to a certain level, so that the push-up operation is peeled off after constant acceleration, constant velocity operation, and constant deceleration. Is a linear sequence that waits for a certain period of time until it progresses sufficiently. However, in the linear sequence, the amount of push-up of the block is not always optimal when the conditions such as the type of dicing tape and the thickness of the die change. In addition, the linear sequence may not be the optimum sequence from the viewpoint of low stress on the die or high-speed pickup.
An object of the present disclosure is to provide a semiconductor manufacturing apparatus capable of controlling a push-up unit in an optimum sequence from the viewpoint of low stress on a die or high-speed pickup.
Other challenges and novel features will become apparent from the description and accompanying drawings herein.

The following is a brief outline of the representative ones of the present disclosure.
That is, the semiconductor manufacturing apparatus has a plurality of blocks in contact with the dicing tape, and reproduces the characteristics of the push-up unit that pushes up the die from under the dicing tape, the collet that attracts the die, and the push-up unit. The peeling model is feedback-controlled so as to follow the output of the peeling model to the target value of the peeling amount of the die from the dicing tape and the bending stress of the entire die, and is a control input to the peeling model. A control unit configured to set the push-up amount to the push-up amount of the block of the push-up unit is provided.

According to the above-mentioned semiconductor manufacturing apparatus, it is possible to control with an optimum sequence from the viewpoint of low stress on the die or high-speed pickup.

The figure explaining the structure of the main part of the push-up unit The figure explaining the push-up sequence of the push-up unit Block diagram explaining the feedback control system The figure explaining the die peeling model The figure explaining the adhesive material model Flow diagram explaining the calculation of the die peeling model Conceptual diagram of the Die bonder according to the embodiment as viewed from above FIG. 7 is a diagram illustrating the operation of the pickup head and the bonding head when viewed from the direction of arrow A. The figure which shows the external perspective view of the die supply part of FIG. Schematic cross-sectional view showing the main part of the die supply part of FIG. External perspective view of the push-up unit of FIG. Top view of a part of the first unit of FIG. Top view of a part of the second unit of FIG. Top view of a part of the third unit of FIG. Vertical sectional view of the push-up unit of FIG. Vertical sectional view of the push-up unit of FIG. The figure which showed the structure of the push-up unit and the collet part of the pickup head which concerns on embodiment. Flow chart for explaining the pickup operation of the die bonder of FIG. A flowchart for explaining a method of manufacturing a semiconductor device according to an embodiment. The figure explaining the numerical example of a nonlinear sequence and a linear sequence Block diagram illustrating the feedforward control system for each axis Flow chart explaining an example of push-up control of each block Flow chart explaining another example of push-up control of each block Block diagram explaining the feedback control system Flow chart explaining the push-up control of each block

Hereinafter, embodiments and examples will be described with reference to the drawings. However, in the following description, the same components may be designated by the same reference numerals and repeated description may be omitted. In addition, in order to clarify the description, the drawings may schematically represent the width, thickness, shape, etc. of each part as compared with the actual embodiment, but this is just an example, and the interpretation of the present invention is used. It is not limited.

First, the push-up unit will be described with reference to FIGS. 1 and 2. FIG. 1 is a diagram showing a configuration of a main part of a push-up unit, FIG. 1 (a) is a sectional view taken along line AA of FIG. 1 (b), and FIG. 1 (b) is a top view. FIG. 2 is a diagram showing a thrust sequence of the thrust unit, FIG. 2 (a) is a diagram showing a linear sequence, and FIG. 2 (b) is a diagram showing a nonlinear thrust sequence of the first example. FIG. 2C is a diagram showing a non-linear thrust sequence of the second example.

As shown in FIG. 1, the push-up unit TUU has a dome DM that adsorbs the dicing tape DCT located on the outer periphery of the die D to be picked up, and a push-up block portion BLK located at the opening of the dome DM. Be prepared. The push-up block portion BLK is composed of, for example, three blocks BLK1, BLK2, and BLK3. As shown in FIG. 1B, the rectangular frame-shaped block BLK2 is located inside the rectangular frame-shaped block BLK1 in a plan view, and the rectangular frame-shaped block BLK3 is located inside the rectangular frame-shaped block BLK2. As shown in FIG. 1A, the block BLK1 is pushed up above the dome DM, and the blocks BLK2 and BLK3 are pushed up above the block BLK1.

As described above, the conventional block push-up operation is performed in a linear push-up sequence in which after constant acceleration, constant velocity operation, constant deceleration, and then waiting for a certain period of time until peeling progresses sufficiently. As shown in FIG. 2A, in the linear push-up sequence, the push-up amount of the block of the push-up unit TUU increases in proportion to time, and after reaching the maximum value (h _gmax ) of the push-up amount. , The push-up operation is stopped, and the sequence waits for the die D to peel off from the dicing tape DCT. Here, the time when the maximum value (h _gmax ) of the thrust amount is reached is defined as t _gmax . The inner block is pushed up after the right end of the time axis shown in FIG. 2A.

According to the inventor's examination, the die slowly peels off from the dicing tape at the beginning of peeling, and exhibits a non-linear behavior in which the peeling progress accelerates as the peeling progresses. The linear sequence may not be the optimum sequence from the viewpoint of low stress on the die and high-speed pickup.

Therefore, in the embodiment, the thrust is performed by a non-linear thrust sequence in which the speed during the thrust is variable according to the peeling of the die. In order to realize this, it is performed by feedback control of the push-up unit. The push-up speed and push-up amount of the push-up unit block can be set programmable.

Next, feedback control will be described with reference to FIG. FIG. 3A is a block diagram showing a general feedback control system, and FIG. 3B is a block diagram showing a control system of the push-up unit of the embodiment.

As shown in FIG. 3A, a general feedback control (PID control) system is composed of a controlled object, a sensor, and a PID controller. In the PID controller (C (s)), the deviation between the output (control amount: y (s)) measured by the sensor from the control target (G (s)) and the target value (r (s)) to be followed. Input to the controlled object by combining the three operations of proportional operation (P), integral operation (I), and differential operation (D) with respect to the signal (e (s)) (operation amount: u (s)). To determine.

The control amount of the push-up unit to be controlled is the amount of peeling of the die D from the dicing tape DCT and the bending stress of the entire die D. These are difficult to measure with a sensor.

Therefore, in the embodiment, as shown in FIG. 3B, a feedback control system is configured for the peeling model. In the embodiment, for the peeling model (Gm (s)), the peeling amount and the bending stress of the entire die are given to the target input (r (s)), and the pushing amount is used as the control input (u (s)) for peeling. It is given to each of the model (Gm (s)) and the actual thrust target (G (s)). By configuring the compensator (C (s)), which is a PID controller, so that the output (y (s)) follows the target input (r (s)), the behavior of the peeling model (Gm (s)) can be changed. The push-up amount, which is the control input (u (s)), is adjusted accordingly.

By giving the amount of push-up generated above to the actual push-up target (G (s)), the peeling model (Gm (s)) can sufficiently reproduce the characteristics of the actual push-up target (G (s)). In this case, the actual thrust target (G (s)) is the peeling result designed by the feedback control system using the peeling model (Gm (s)).

The peeling model has the following characteristics obtained by the inventor's study.
(1) Peeling starts when the amount of push-up exceeds a certain level.
(2) in accordance with the peeling proceeds from the release start, peeling progresses accelerates (with the peeling progresses, the die of the peeling progresses accelerates becomes larger as the curvature closer to the root, the moment to be resilience w _r increases Because.).
(3) A dicing tape with high peeling strength requires a large amount of push-up, and a sticky dicing tape takes a long time to push up (the amount of push-up and peeling that start peeling by changing the parameters of the adhesive material of the dicing tape). The speed of progress changes.)

Next, the peeling model will be described with reference to FIGS. 4 to 6. 4A and 4B are views showing a die peeling model of the broken line portion of FIG. 1A, FIG. 4A is before pushing up, FIG. 4B is when pushing up, and FIG. 4C is breaking the adhesive material. It is a figure which shows the time of occurrence. FIG. 5 is a diagram showing an adhesive material model. FIG. 6 is a diagram showing a calculation flow of the die peeling model.

One side of the die D being pushed up is considered to be a cantilever beam fixed by the end face of the block BLK2 being pushed up. At this time, it is assumed that an evenly distributed load is applied to the die D by the adhesive material of the dicing tape DCT as shown in FIG. 4 (a).

When the block BLK2 is pushed up by the push-up amount (h), the die D is considered to be deformed as shown in FIG. 4B until the peeling starts.

here,
w: Adhesive adhesive force applied to the unit area [N]
L: Width of block BLK1 [mm]
h: Push-up amount of block BLK2 [mm]
b: Length of one side of block BLK2 [mm]
E: Young's modulus of die [N / mm ² ]
δx: The amount of deflection at the position x from the end of the die.

Furthermore, the adhesive material fixing the die D is modeled. FIG. 5 is a diagram showing an adhesive model (three-element model).

By receiving the reaction force ( _wr ) against the bending of the die D, it is deformed over time due to the damping constant (C ₂ ). When the reaction force ( _wr ) is large with respect to the spring constants (K ₁ , K ₂ ), the adhesive material shall be broken when the displacement (ε ₁ , ε ₂ ) reaches a predetermined deformation amount. When the displacement (ε ₁ ) reaches the limit value, interfacial fracture occurs, and when the displacement (ε ₂ ) reaches the limit value, cohesive fracture occurs.

When the adhesive material is broken, the die D has a shape as shown in FIG. 4 (c), so w is re-established assuming that an evenly distributed load is applied only to the non-broken part (non-destructed part). calculate.

The calculation of the die peeling model will be described with reference to FIG.
Position _{x min} endmost not destroyed (nondestructive tip), the deflection amount of nondestructive tip as .delta.x _min, the .delta.x _min was calculated using E, h, L, _w, a _{x min,} .delta.x _The load (w) to be updated is calculated using _min , E, h, L, and x _min (step S1).

Further, the reaction force ( _wr ) generated at x _min at the tip of the non-destructive portion is calculated as a moment between x _min −x _{min + 1} (step S2).

Deformation amount of adhesive in the non-destructive tip of _{x min} the (ε _{1) w} r, calculated using the _{K 1,} the amount of deformation (epsilon ₁₎ calculated using _{w r,} K 1, _{C 2} (Step S3). It is determined whether or not the amount of deformation exceeds a predetermined value (whether or not the adhesive material is broken) (step S4).

If destruction of the adhesive occurs at x _min, it is increased by Δx stride on calculating the _{x min} (step S5).
This is repeated until no destruction occurs.

Next, the time is increased by Δt of the step width, and the amount of deformation of the adhesive material at x _min is calculated using w _r , ε ₁ , ε ₂ , K ₁ , and C ₂ (step S6).

The deflection (δ x _min ) of the die D at x _min is reduced by the amount of deformation of the adhesive material (ε ₁ , ε ₂ ), the distributed load (w) is recalculated, and the total deflection is updated.

The calculation result (numerical example) of the non-linear sequence and the constant-speed rising push-up sequence (linear sequence) will be described with reference to FIG. FIG. 20A is a diagram showing a push-up amount and a peeling amount of the linear sequence, and FIG. 20B is a diagram showing the die bending stress of the linear sequence. FIG. 20 (c) is a diagram showing the amount of push-up and the amount of peeling of the nonlinear sequence, and FIG. 20 (d) is a diagram showing the die bending stress of the nonlinear sequence.

In a linear sequence,
The push-up amount is 300 μm, and the push-up speed is 1 mm / sec.

In the non-linear sequence, for the peeling model,
L = 0.5 mm, b = 10 mm, E = 185000 N / mm ² , die thickness = 20 μm, K1 = 20 N / mm, K2 = 1.5 N / mm, C2 = 0.01 N / (mm / s), allowable adhesion Under the condition of material elongation = 0.6 mm
C (s) = K _p + K _i / s + K _d s
K _p = [1,0], K _i = [0,0], K _d = [0,0]
r (s) = [0.5,0] (peeling amount = 0.5 mm, die bending stress = 0)
Created as. However, it is assumed that there is no error between Gm (s) and G (s).

As shown in FIGS. 20A and 20B, the peeling time is 0.65 seconds and the maximum stress is 10 MPa in the linear sequence. As shown in FIGS. 20 (c) and 20 (d), the non-linear sequence has a peeling time of 0.58 seconds and a maximum stress of 8.5 MPa, and both the peeling time and the maximum stress are more effective than the linear sequence.

Next, feedforward control for each axis using the peeling model generated by the feedback control system described above will be described with reference to FIGS. 21 to 23. 21A and 21B are diagrams for explaining a feedforward control system for each axis, FIG. 21A is a block diagram for block BLK1, and FIG. 21B is a block diagram for block BLK2. c) is a block diagram for block BLK3. FIG. 22 is a flowchart showing an example of push-up control of each block. FIG. 23 is a flowchart showing another example of the push-up control of each block.

The configurations and operations of FIGS. 21 (a), (b), and (c) are basically the same as those of FIGS. 3 (b), but the control input (u (s)) is the controller blocks BLK1, BLK2, and BLK3. It is input to the motor driver for controlling the push-up operation of the blocks BLK1, BLK2, and BLK3 which are the actual push-up targets (G (s)).

As shown in FIG. 21 (a), a peeling model (Gm (s)) for the block BLK1 is generated in the same manner as in FIG. 3 (b). This is the generation of the peeling model of the block BLK1 in steps S11 of FIGS. 22 and 23. The generated peeling model (Gm (s)) for the block BLK1 serves as a target input (r (s)) for the block BLK2.

As shown in FIG. 21 (b), a peeling model (Gm (s)) for the block BLK2 is generated in the same manner as in FIG. 3 (b). This is the generation of the peeling model of the block BLK2 in steps S21 of FIGS. 22 and 23. The generated peeling model (Gm (s)) for the block BLK2 serves as a target input (r (s)) for the block BLK3.

As shown in FIG. 21 (c), a peeling model (Gm (s)) for the block BLK3 is generated in the same manner as in FIG. 3 (b). This is the generation of the peeling model of the block BLK3 in steps S31 of FIGS. 22 and 23.

In the flow of FIG. 22, push-up control of each block is performed while generating a peeling model of each block. That is, after the release model of the block BLK1 in step S11 is generated, the block BLK1 is pushed up in parallel with the generation of the release model of the block BLK2 in step S21 (step S12). Next, after generating the peeling model of the block BLK2 in step S21, the block BLK2 is pushed up in parallel with the generation of the peeling model of the block BLK3 in step S31 (step S22). Finally, after the peeling model of the block BLK3 in step S31 is generated, the block BLK3 is pushed up (step S32).

In the flow of FIG. 23, after the peeling model of all the blocks is generated, the push-up control of each block is performed. That is, a peeling model of the block BLK1 is generated (step S11), a peeling model of the block BLK2 is generated (step S21), and a peeling model of the block BLK3 is generated (step S31). After that, the block BLK1 is pushed up (step S12), the block BLK2 is pushed up (step S22), and the block BLK3 is pushed up (step S32).

Next, feedback control for each axis using the peeling model generated by the above-mentioned feedback control system will be described with reference to FIGS. 24 and 25. FIG. 24 is a block diagram illustrating a feedback control system. FIG. 25 is a flowchart illustrating the push-up control of each block.

In the control system of FIG. 24, the peeling model generated by the feedback control system is the same as that of FIG. 3 (b), but the control input (u (s)) is applied to the motor driver for the blocks BLK1, BLK2, and BLK3 which are controllers. The push-up operation of the blocks BLK1, BLK2, and BLK3 that are input and are the actual push-up targets (G (s)) is controlled, and the peeling condition confirmed by the sensor is fed back to the control input (u (s)).

As shown in FIG. 25, a peeling model (Gm (s)) for the block BLK1 is generated in the same manner as in FIG. 22 (step S11). The control input (u (s)) is input to the motor driver for the block BLK1 which is a controller, and controls the pushing operation of the block BLK1 which is the actual pushing target (G (s)) (step S12). The degree of peeling is confirmed by a sensor (step S13), and it is determined whether or not the adhesive material at the tip of the non-destructive portion (x _min ) is broken according to the simulation result (step S14). If NO, the process returns to step S11, and the peeling model (Gm (s)) for the block BLK1 is generated again.

If YES, the generated peeling model (Gm (s)) for block BLK1 becomes the target input (r (s)) for block BLK2, and the generated peeling model (Gm (s)) for block BLK2 is generated. (Step S21). The control input (u (s)) is input to the motor driver for the block BLK2 which is a controller, and controls the pushing operation of the block BLK2 which is the actual pushing target (G (s)) (step S22). The degree of peeling is confirmed by a sensor (step S23), and it is determined whether or not the adhesive material at the tip of the non-destructive portion (x _min ) is broken according to the simulation result (step S24). If NO, the process returns to step S21, and the peeling model (Gm (s)) for the block BLK2 is generated again.

If YES, the generated peeling model (Gm (s)) for block BLK2 becomes the target input (r (s)) for block BLK3, and the generated peeling model (Gm (s)) for block BLK3 is generated. (Step S31). The control input (u (s)) is input to the motor driver for the block BLK3 which is a controller, and controls the pushing operation of the block BLK3 which is the actual pushing target (G (s)) (step S32). The degree of peeling is confirmed by a sensor (step S33), and it is determined whether or not the adhesive material at the tip of the non-destructive portion (x _min ) is broken according to the simulation result (step S34). If NO, the process returns to step S13, and the peeling model (Gm (s)) for the block BLK3 is generated again. If YES, the push-up control is terminated.

The control of each axis may be performed by the combined use of feedforward control and feedback control.

Next, an example of the nonlinear thrust sequence will be described with reference to FIGS. 2 (b) and 2 (c).
As shown in FIG. 2B, in the non-linear thrust sequence of the first example, the thrust amount of the block of the thrust unit increases not necessarily in proportion to the time, and the maximum value of the thrust amount (h _gmax ). After reaching, the push-up operation is a sequence of waiting for the die to peel off from the dicing tape while decreasing without stopping. In the figure, it has an inflection point that is convex upward. The t _gmax of the nonlinear thrust sequence of the first example is faster than the t _gmax of the linear thrust sequence of FIG. 2 (a), that is, the thrust speed is faster. The inner block is pushed up after the right end of the time axis shown in FIG. 2 (b).

As shown in FIG. 2 (c), in the non-linear thrust sequence of the second example, the thrust amount of the block of the thrust unit increases not necessarily in proportion to the time, and the maximum value of the thrust amount ( _hlmax ). After reaching the limit, the push-up operation does not stop, but decreases once to reach the minimum value ( _hlmin ), and then increases while waiting for the die to peel off from the dicing tape. Here, the time has reached the tossing of the maximum value _{(h lmax)} and _{t lmax,} the time has reached the tossing of the minimum value _{(h lmin)} and _{t lmin.} In the figure, it has an inflection point that is convex upward and an inflection point that is convex downward. The t _lmax of the nonlinear thrust sequence of the second example is faster than the t _gmax of the linear thrust sequence of FIG. 2 (a), that is, the thrust speed is faster. The inner block is pushed up after the right end of the time axis shown in FIG. 2 (c).

FIG. 7 is a top view showing an outline of the die bonder according to the embodiment. FIG. 8 is a diagram illustrating the operation of the pickup head and the bonding head when viewed from the direction of arrow A in FIG. 7.

The die bonder 10 is roughly divided into a die supply unit 1 for supplying a die D for mounting a product area (hereinafter referred to as a package area P) which is one or a plurality of final packages on a printed circuit board S, and a pickup unit 2. , An intermediate stage unit 3, a bonding unit 4, a transport unit 5, a substrate supply unit 6, a substrate carry-out unit 7, and a control unit 8 that monitors and controls the operation of each unit. The Y-axis direction is the front-rear direction of the die bonder 10, and the X-axis direction is the left-right direction. The die supply unit 1 is arranged on the front side of the die bonder 10, and the bonding unit 4 is arranged on the back side.

First, the die supply unit 1 supplies the die D to be mounted on the package area P of the substrate S. The die supply unit 1 includes a wafer holding table 12 for holding the wafer 11, and a pushing unit 13 indicated by a dotted line for pushing the die D from the wafer 11. The die supply unit 1 is moved in the XY axis direction by a driving means (not shown), and the die D to be picked up is moved to the position of the push-up unit 13.

The pickup unit 2 includes a pickup head 21 that picks up the die D, a Y drive unit 23 of the pickup head that moves the pickup head 21 in the Y-axis direction, and each drive (not shown) that moves the collet 22 up / down, rotates, and moves in the X-axis direction. It has a part and. The pickup head 21 has a collet 22 (see also FIG. 10) that attracts and holds the pushed-up die D to the tip, picks up the die D from the die supply unit 1, and places it on the intermediate stage 31. The pickup head 21 has drive units (not shown) that move the collet 22 up / down, rotate, and move in the X-axis direction.

The intermediate stage unit 3 has an intermediate stage 31 on which the die D is temporarily placed, and a stage recognition camera 32 for recognizing the die D on the intermediate stage 31.

The bonding unit 4 picks up the die D from the intermediate stage 31 and bonds it on the package area P of the substrate S to be conveyed, or laminates it on the die already bonded on the package area P of the substrate S. Bond in shape. The bonding unit 4 includes a bonding head 41 having a collet 42 (see also FIG. 2) that attracts and holds the die D to the tip like the pickup head 21, and a Y drive unit 43 that moves the bonding head 41 in the Y-axis direction. It has a substrate recognition camera 44 that captures a position recognition mark (not shown) of the package area P of the substrate S and recognizes the bonding position.
With such a configuration, the bonding head 41 corrects the pickup position / orientation based on the image data of the stage recognition camera 32, picks up the die D from the intermediate stage 31, and bases the board based on the image data of the board recognition camera 44. Die D is bonded to.

The transport unit 5 has a substrate transport claw 51 that grips and transports the substrate S, and a transport lane 52 to which the substrate S moves. The substrate S moves by driving a nut (not shown) of the substrate transport claw 51 provided in the transport lane 52 with a ball screw (not shown) provided along the transport lane 52.
With such a configuration, the substrate S moves from the substrate supply unit 6 to the bonding position along the transport lane 52, and after bonding, moves to the substrate unloading unit 7 and passes the substrate S to the substrate unloading unit 7.

The control unit 8 includes a memory for storing a program (software) for monitoring and controlling the operation of each unit of the die bonder 10, and a central processing unit (CPU) for executing the program stored in the memory.

Next, the configuration of the die supply unit 1 will be described with reference to FIGS. 9 and 10. FIG. 9 is a view showing an external perspective view of the die supply portion of FIG. 7. FIG. 10 is a schematic cross-sectional view showing a main portion of the die supply portion of FIG.

The die supply unit 1 includes a wafer holding base 12 that moves in the horizontal direction (XY axis direction) and a push-up unit 13 that moves in the vertical direction. The wafer holding table 12 has an expanding ring 15 for holding the wafer ring 14 and a support ring 17 for horizontally positioning the dicing tape 16 held on the wafer ring 14 and to which a plurality of dies D are adhered. The push-up unit 13 is arranged inside the support ring 17.

The die supply unit 1 lowers the expanding ring 15 holding the wafer ring 14 when the die D is pushed up. As a result, the dicing tape 16 held in the wafer ring 14 is stretched to widen the interval between the dies D, and the push-up unit 13 pushes up the die D from below the die D to improve the pick-up property of the die D. The adhesive for adhering the die to the substrate changes from a liquid to a film, and a film-like adhesive material called a die attach film (DAF) 18 is attached between the wafer 11 and the dicing tape 16. In the wafer 11 having the die attach film 18, dicing is performed on the wafer 11 and the die attach film 18. Therefore, in the peeling step, the wafer 11 and the die attach film 18 are peeled from the dicing tape 16. In the following, the peeling step will be described ignoring the presence of the die attach film 18.

Next, the push-up unit 13 will be described with reference to FIGS. 11 to 16. FIG. 11 is an external perspective view of the push-up unit according to the embodiment. FIG. 12 is a top view of a part of the first unit of FIG. FIG. 13 is a top view of a part of the second unit of FIG. FIG. 14 is a top view of a part of the third unit of FIG. FIG. 15 is a vertical cross-sectional view of the push-up unit of FIG. FIG. 16 is a vertical cross-sectional view of the push-up unit of FIG.

The push-up unit 13 includes a first unit 13a, a second unit 13b on which the first unit 13a is mounted, and a third unit 13c on which the second unit 13b is mounted. The second unit 13b and the third unit 13c are common parts regardless of the product type, and the first unit 13a is a replaceable part for each product type.

The first unit 13a has a block portion 13a1 having blocks A1 to A4, a dome head 13a2 having a plurality of suction holes, a suction hole 13a3, and a suction hole 13a4 for dome suction, and is a concentric circle of the second unit 13b. The vertical movement of the shaped blocks B1 to B4 is converted into the vertical movement of the four concentric square blocks A1 to A4. The four blocks A1 to A4 can move up and down independently. The planar shape of the concentric square blocks A1 to A4 is configured to match the shape of the die D. If the die size is large, the number of concentric square blocks is more than four. This is made possible by the plurality of output units of the third unit and the concentric blocks of the second unit moving up and down (not moving up and down) independently of each other. The push-up speed and push-up amount of the four blocks A1 to A4 can be set programmable.

The second unit 13b has a circular tubular block B1 to B6 and an outer peripheral portion 13b2, and has six concentric vertical movements of the output units C1 to C6 arranged on the circumference of the first unit 13a. It is converted into the vertical movement of blocks B1 to B6. The six blocks B1 to B6 can move up and down independently. Here, since the first unit 13a has only four blocks A1 to A4, the blocks B5 and B6 are not used.

The third unit 13c includes a central portion 13c0 and six peripheral portions 13c1 to 13c6. The central portion 13c0 has six output portions C1 to C6 that are arranged at equal intervals on the circumference of the upper surface and move up and down independently. The peripheral portions 13c1 to 13c6 can drive the output portions C1 to C6 independently of each other. The peripheral portions 13c1 to 13c6 are provided with motors M1 to M6, respectively, and the central portion 13c0 is provided with plunger mechanisms P1 to P6 that convert the rotation of the motor into vertical movement by a cam or a link. The plunger mechanisms P1 to P6 give vertical movement to the output units C1 to C6. The motors M2 and M5 and the plunger mechanisms P2 and P5 are not shown. Here, since the first unit 13a has only four blocks A1 to A4, the peripheral portions 13c5 and 13c6 are not used. Therefore, the motors M5 and M6, the plunger mechanisms P5 and P6, and the output units C5 and C6 are not used.

Next, the relationship between the push-up unit and the collet will be described with reference to FIG. FIG. 17 is a diagram showing a configuration of a push-up unit and a collet portion of the pickup head according to the embodiment.

As shown in FIG. 17, the collet portion 20 has a collet 22, a collet holder 25 for holding the collet 22, and suction holes 22v and 25v provided on the collet portion 20 for sucking the die D, respectively. The suction surface for sucking the die of the collet 22 is substantially the same size as the die D.

The first unit 13a has a dome head 13a2 around the upper surface. The dome head 13a2 has a plurality of suction holes HL and a cavity CV, sucks from the suction holes 13a3, and sucks the die Dd around the die D picked up by the collet 22 through the dicing tape 16. In FIG. 17, only one row of suction holes HL is shown around the block portion 13a1, but a plurality of rows are provided in order to stably hold the die Dd that is not the target of pickup. The gaps A1v, A2v, A3v between the blocks of the concentric square blocks A1 to A4 and the cavity in the dome of the first unit 13a are sucked from the suction hole 13a4 of the dome suction and picked up by the collet 22. The die D is sucked through the dicing tape 16. The suction from the suction hole 13a3 and the suction from the suction hole 13a4 can be performed independently.

The push-up unit 13 of this embodiment can be applied to various dies by changing the shape of the block of the first unit and the number of blocks. For example, when the number of blocks is 6, the die size is 20 mm □. Applicable to the following dies. By increasing the number of output units of the third unit, the number of concentric blocks of the second unit, and the number of concentric square blocks of the first unit, it can be applied to dies with a die size larger than 20 mm □. ..

Next, the pickup operation by the push-up unit 13 having the above-described configuration will be described with reference to FIG. FIG. 18 is a flowchart showing a processing flow of the pickup operation.

Step PS1: The control unit 8 moves the wafer holding base 12 so that the die D to be picked up is located directly above the push-up unit 13, and pushes up so that the upper surface of the third unit comes into contact with the back surface of the dicing tape 16. Move the unit 13. At this time, as shown in FIG. 19, the control unit 8 makes sure that each of the blocks A1 to A4 of the block unit 13a1 forms the same plane as the surface of the dome head 13a2, and between the suction hole HL of the dome head 13a2 and the block. The dicing tape 16 is adsorbed by the gaps A1v, A2v, and A3v.

Step PS2: The control unit 8 lowers the collet unit 20, positions it on the die D to be picked up, and sucks the die D by the suction holes 22v and 25v.

Step PS3: The control unit 8 sequentially raises the blocks of the block unit 13a1 from the outside to perform a peeling operation. Here, the control unit 8 performs feed forward control using the peeling model of the embodiment. That is, the control unit 8 drives the plunger mechanism P4 by the motor M4, raises only the outermost block A4 from several tens of μm to several hundreds of μm, and then lowers and stops it. The ascending and descending speeds are not constant. As a result, a raised portion where the dicing tape 16 is raised is formed around the block A4, and a minute space, that is, a peeling starting point is formed between the dicing tape 16 and the die attach film 18. This space significantly reduces the anchor effect, that is, the stress applied to the die D, and the subsequent peeling operation can be reliably performed. Next, the control unit 8 drives the plunger mechanism P3 with the motor M3 to raise only the second outer block A3 higher than the block A4 and stop it. Next, the control unit 8 drives the plunger mechanism P2 with the motor M2 to raise only the third outer block A2 higher than the block A3 and stop it. Finally, the control unit 8 drives the plunger mechanism P1 with the motor M1 to raise only the innermost block A1 higher than the block A2 and stop it.

Step PS4: The control unit 8 raises the collet. In the final state of step S3, the contact area between the dicing tape 16 and the die D becomes an area that can be peeled off by raising the collet, and the die D can be peeled off by raising the collet 22.

Step PS5: The control unit 8 causes the blocks A1 to A4 of the block unit 13a1 to form the same plane as the surface of the dome head 13a2, and the suction holes HL of the dome head 13a2 and the gaps A1v, A2v, A3v between the blocks. Stops the adsorption of the dicing tape 16 by. The control unit 8 moves the push-up unit 13 so that the upper surface of the first unit is separated from the back surface of the dicing tape 16.

The control unit 8 repeats steps PS1 to PS5 to pick up a good die of the wafer 11.

Next, a method of manufacturing a semiconductor device using a die bonder according to an embodiment will be described with reference to FIG. FIG. 19 is a flowchart showing a manufacturing method of the semiconductor device of FIG.

Step BS11: The wafer ring 14 holding the dicing tape 16 to which the dicing tape 16 divided from the wafer 11 is attached is stored in a wafer cassette (not shown) and carried into the die bonder 10. The control unit 8 supplies the wafer ring 14 to the die supply unit 1 from the wafer cassette filled with the wafer ring 14. Further, the substrate S is prepared and carried into the die bonder 10. The control unit 8 attaches the substrate S to the substrate transfer claw 51 by the substrate supply unit 6.

Step BS12: The control unit 8 peels the die D as described above, and picks up the peeled die D from the wafer 11. In this way, the die D peeled from the dicing tape 16 together with the die attach film 18 is attracted to and held by the collet 22 and conveyed to the next step (step BS13). Then, when the collet 22 that has conveyed the die D to the next step returns to the die supply unit 1, the next die D is peeled off from the dicing tape 16 according to the above procedure, and thereafter, the dicing tape 16 to 1 is followed by the same procedure. The die D is peeled off one by one.

Step BS13: The control unit 8 mounts the picked-up die on the substrate S or stacks it on the die already bonded. The control unit 8 places the die D picked up from the wafer 11 on the intermediate stage 31, picks up the die D again from the intermediate stage 31 with the bonding head 41, and bonds the die D to the conveyed substrate S.

Step BS14: The control unit 8 takes out the substrate S to which the die D is bonded from the substrate transfer claw 51 at the substrate carry-out unit 7. The substrate S is carried out from the die bonder 10.

As described above, the die D is mounted on the substrate S via the die attach film 18 and carried out from the die bonder. Then, in the wire bonding step, it is electrically connected to the electrode of the substrate S via the Au wire. Subsequently, the substrate S on which the die D was mounted was carried into the die bonder, and the second die D was laminated on the die D mounted on the substrate S via the die-attach film 18 and carried out from the die bonder. After that, it is electrically connected to the electrode of the substrate S via the Au wire in the wire bonding step. The second die D is peeled from the dicing tape 16 by the method described above, and then conveyed to the pelleting step and laminated on the die D. After the above steps are repeated a predetermined number of times, the substrate S is conveyed to the molding step, and the plurality of dies D and Au wires are sealed with a molding resin (not shown) to complete the laminated package.

As described above, when assembling a laminated package in which a plurality of dies are three-dimensionally mounted on a substrate, it is required to reduce the die thickness to 20 μm or less in order to prevent an increase in the package thickness. On the other hand, since the thickness of the dicing tape is about 100 μm, the thickness of the dicing tape is 4 to 5 times the thickness of the die.

When an attempt is made to peel off such a thin die from the dicing tape, the deformation of the die following the deformation of the dicing tape is more likely to occur. However, in the die bonder of the present embodiment, when the die is picked up from the dicing tape. Damage to the die can be reduced.

The invention made by the present inventor has been specifically described above based on the embodiments and examples, but the present invention is not limited to the above embodiments and examples, and can be variously modified. Not to mention.

For example, although the plurality of blocks of the first unit have been described as having a concentric square shape, they may have a concentric circular shape or a concentric elliptical shape, or the square blocks may be arranged in parallel.

Further, in the embodiment, the pickup target die and the peripheral die are attracted / released at the same timing, but the pickup target die and the peripheral die may be attracted / released at different timings. As a result, more reliable peeling can be performed.

Further, in the embodiment, the blocks of each stage are pushed up in sequence, but since each stage is independent and can perform different operations, both push-up / pull-down operations may be mixed.

Further, in the examples, the example of using the die attach film has been described, but it is not necessary to provide the preform portion for applying the adhesive to the substrate and not use the die attach film.

Further, in the embodiment, a die bonder in which the die is picked up from the die supply unit by the pickup head and placed on the intermediate stage, and the die placed on the intermediate stage is bonded to the substrate by the bonding head has been described, but the present invention is limited to this. It is applicable to semiconductor manufacturing equipment that picks up dies from the die supply unit.
For example, it can be applied to a die bonder that does not have an intermediate stage and a pickup head and bonds a die of a die supply unit to a substrate with a bonding head.
Further, there is no intermediate stage, and it can be applied to a flip-chip bonder that picks up a die from a die supply unit, rotates the die pickup head upward, delivers the die to the bonding head, and bonds the die to the substrate by the bonding head.
Further, it is applicable to a die sorter in which a die picked up by a pickup head from a die supply unit is placed on a tray or the like without an intermediate stage and a bonding head.

11: Wafer 13: Push-up unit 16: Dicing tape 22: Collet 8: Control unit 10: Die bonder D: Die

Claims (15)

A push-up unit having a plurality of blocks in contact with the dicing tape and pushing the die from under the dicing tape,
A collet that adsorbs the die and
For the peeling model that reproduces the characteristics of the push-up unit, feedback control is performed so that the output of the peeling model follows the target values of the peeling amount of the die from the dicing tape and the bending stress of the entire die. A control unit configured so that the push-up amount, which is a control input to the peeling model, is the push-up amount of the block of the push-up unit.
A semiconductor manufacturing apparatus including. In the semiconductor manufacturing apparatus of claim 1,
The peeling model is based on the adhesive force of the dicing tape, which is calculated based on the amount of push-up of the block, the width of the block, and the Young's modulus of the die, and the adhesive model of the adhesive. A semiconductor manufacturing apparatus including the calculated amount of deformation of the adhesive material. In the semiconductor manufacturing apparatus of claim 2,
The adhesive model is a semiconductor manufacturing apparatus including a spring constant and a damping constant. In the semiconductor manufacturing apparatus of claim 3,
The peeling model is
The characteristic that peeling starts when the amount of push-up is equal to or more than the specified value,
The characteristic that the peeling progress accelerates from the start of peeling to the progress of peeling,
By changing the parameters of the adhesive material, the amount of push-up at which peeling starts and the speed at which peeling progresses change, and
Semiconductor manufacturing equipment. In the semiconductor manufacturing apparatus of claim 1,
The control unit raises the outer block of the plurality of blocks to reach the maximum value of the push-up amount, then reduces the push-up amount and raises the inner block next to the outer block. Semiconductor manufacturing equipment configured to allow. In the semiconductor manufacturing apparatus of claim 1,
The control unit raises the outer block of the plurality of blocks to reach the maximum value of the push-up amount, and then reduces the push-up amount to reach the minimum value of the push-up amount. A semiconductor manufacturing apparatus configured to increase the amount of push-up and raise the inner block next to the outer block. In the semiconductor manufacturing apparatus of claim 1,
The push-up unit is a semiconductor manufacturing apparatus having a plurality of independent drive shafts corresponding to the plurality of blocks, and having a programmable push-up speed and push-up amount of the blocks. In the semiconductor manufacturing apparatus of claim 1,
The die is a semiconductor manufacturing apparatus further provided with a die-attach film between the die and the dicing tape. In the semiconductor manufacturing apparatus of claim 1, further
A semiconductor manufacturing apparatus including a pickup head to which the collet is mounted. In the semiconductor manufacturing apparatus of claim 9, further
An intermediate stage on which the die picked up by the pickup head is placed, and
A bonding head that bonds the die mounted on the intermediate stage onto a substrate or a die that has already been bonded.
A semiconductor manufacturing apparatus including. (A) The dicing tape is held in a semiconductor manufacturing apparatus having a plurality of blocks in contact with the dicing tape and including a push-up unit for pushing up the die from under the dicing tape and a collet for sucking the die. The process of bringing in the wafer ring and
And the process of preparing
(B) A step of pushing up the die with the push-up unit and picking up the die with the collet.
With
In the step (b), the output of the peeling model follows the target values of the peeling amount of the die from the dicing tape and the bending stress of the entire die with respect to the peeling model that reproduces the characteristics of the push-up unit. A method for manufacturing a semiconductor device in which feedback control is performed so that the die is pushed up by using a push-up amount which is a control input to the peeling model as a push-up amount of the block of the push-up unit. In the method for manufacturing a semiconductor device according to claim 11,
In the step (b), the outer block of the plurality of blocks is raised to reach the maximum value of the push-up amount, and then the push-up amount is reduced, and the inner block next to the outer block is reached. A method of manufacturing a semiconductor device that raises the temperature. In the method for manufacturing a semiconductor device according to claim 11,
In the step (b), the outer block of the plurality of blocks is raised to reach the maximum value of the push-up amount, and then the push-up amount is reduced to reach the minimum value of the push-up amount. , A method for manufacturing a semiconductor device, which increases the amount of push-up and raises the inner block next to the outer block. In the method for manufacturing a semiconductor device according to claim 11, further
(C) A method for manufacturing a semiconductor device including a step of bonding the die onto a substrate or a die that has already been bonded. In the method for manufacturing a semiconductor device according to claim 14,
The step (b) further includes a step of placing the picked-up die on an intermediate stage.
The step (c) is a method for manufacturing a semiconductor device, further comprising a step of picking up the die from the intermediate stage.

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