JP2020113795A - エッチング方法およびエッチング装置 - Google Patents
エッチング方法およびエッチング装置 Download PDFInfo
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- JP2020113795A JP2020113795A JP2020072578A JP2020072578A JP2020113795A JP 2020113795 A JP2020113795 A JP 2020113795A JP 2020072578 A JP2020072578 A JP 2020072578A JP 2020072578 A JP2020072578 A JP 2020072578A JP 2020113795 A JP2020113795 A JP 2020113795A
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- substrate
- etching
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- etching method
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- 238000005530 etching Methods 0.000 title claims abstract description 127
- 238000000034 method Methods 0.000 title claims abstract description 39
- 239000000758 substrate Substances 0.000 claims abstract description 153
- 239000013545 self-assembled monolayer Substances 0.000 claims abstract description 14
- 230000004913 activation Effects 0.000 claims abstract description 11
- 239000002094 self assembled monolayer Substances 0.000 claims abstract description 7
- 230000015572 biosynthetic process Effects 0.000 claims description 9
- 230000003213 activating effect Effects 0.000 claims description 8
- 238000000151 deposition Methods 0.000 claims description 8
- 230000001678 irradiating effect Effects 0.000 claims description 2
- 239000007789 gas Substances 0.000 description 80
- 239000010408 film Substances 0.000 description 51
- 239000000463 material Substances 0.000 description 20
- 239000010410 layer Substances 0.000 description 17
- 239000002184 metal Substances 0.000 description 14
- 239000002052 molecular layer Substances 0.000 description 14
- 238000010438 heat treatment Methods 0.000 description 13
- 150000002500 ions Chemical class 0.000 description 13
- 150000002894 organic compounds Chemical class 0.000 description 12
- 230000002093 peripheral effect Effects 0.000 description 8
- 230000008021 deposition Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 239000002994 raw material Substances 0.000 description 6
- 238000001704 evaporation Methods 0.000 description 5
- 230000008020 evaporation Effects 0.000 description 4
- 238000005192 partition Methods 0.000 description 4
- 238000003486 chemical etching Methods 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 240000006829 Ficus sundaica Species 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 125000000524 functional group Chemical group 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000001338 self-assembly Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
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Abstract
Description
(m=10〜20) ・・・(1)
3 基板保持部
4 原料ガス供給部
6 排気部
10 エッチング装置
41 ガス生成容器
42 有機化合物収容容器
44 原料ガス供給管
51 基板加熱部
90 照射部
91 ガスソース
92 マスフローコントローラ
93 ガス供給管
100 制御部
L 成膜材料
L1 分子層
P1 メタル層
P2 絶縁膜
S 基板
Claims (5)
- エッチングの対象となる基板に、CFxを含む直鎖型の分子を蒸着させて自己組織化単分子膜を成膜し、
前記自己組織化単分子膜が成膜された基板に対して、CFxを活性化する活性化ガスを照射する
ことを特徴とするエッチング方法。 - 前記分子は、CF3−(CF2−CF2−CF2−O−)m−CH2−CH2−Si−(OCH3)3 (m=10〜20)である
ことを特徴とする請求項1に記載のエッチング方法。 - 前記活性化ガスは、Arガスである
ことを特徴とする請求項1または2に記載のエッチング方法。 - 前記成膜は、前記分子が蒸発を開始する開始温度から所定範囲の温度に前記基板を温調した状態で、前記分子を基板に蒸着させることで成膜する
ことを特徴とする請求項1から3の何れか1つに記載のエッチング方法。 - 処理容器と、
前記処理容器内に設けられ、エッチングの対象となる基板を保持する基板保持部と、
請求項1から4の何れか1つに記載のエッチング方法を実行する制御部と、
を有することを特徴とするエッチング装置。
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JP2020072578A JP6987172B2 (ja) | 2017-11-28 | 2020-04-14 | エッチング方法およびエッチング装置 |
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JP2017228048A JP2019102483A (ja) | 2017-11-28 | 2017-11-28 | エッチング方法およびエッチング装置 |
JP2020072578A JP6987172B2 (ja) | 2017-11-28 | 2020-04-14 | エッチング方法およびエッチング装置 |
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Publications (2)
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JP2020113795A true JP2020113795A (ja) | 2020-07-27 |
JP6987172B2 JP6987172B2 (ja) | 2021-12-22 |
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Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20150017809A1 (en) * | 2013-07-09 | 2015-01-15 | Lam Research Corporation | Fluorocarbon based aspect-ratio independent etching |
WO2016160778A1 (en) * | 2015-03-30 | 2016-10-06 | Tokyo Electron Limited | Method for atomic layer etching |
WO2016190036A1 (ja) * | 2015-05-22 | 2016-12-01 | 株式会社 日立ハイテクノロジーズ | プラズマ処理装置およびそれを用いたプラズマ処理方法 |
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2020
- 2020-04-14 JP JP2020072578A patent/JP6987172B2/ja active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20150017809A1 (en) * | 2013-07-09 | 2015-01-15 | Lam Research Corporation | Fluorocarbon based aspect-ratio independent etching |
WO2016160778A1 (en) * | 2015-03-30 | 2016-10-06 | Tokyo Electron Limited | Method for atomic layer etching |
WO2016190036A1 (ja) * | 2015-05-22 | 2016-12-01 | 株式会社 日立ハイテクノロジーズ | プラズマ処理装置およびそれを用いたプラズマ処理方法 |
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