JP2020107455A - 基板保持装置 - Google Patents
基板保持装置 Download PDFInfo
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- JP2020107455A JP2020107455A JP2018244238A JP2018244238A JP2020107455A JP 2020107455 A JP2020107455 A JP 2020107455A JP 2018244238 A JP2018244238 A JP 2018244238A JP 2018244238 A JP2018244238 A JP 2018244238A JP 2020107455 A JP2020107455 A JP 2020107455A
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- 239000000758 substrate Substances 0.000 title claims abstract description 208
- 230000007246 mechanism Effects 0.000 claims abstract description 111
- 230000005540 biological transmission Effects 0.000 claims abstract description 81
- 230000003028 elevating effect Effects 0.000 claims abstract description 22
- 238000010884 ion-beam technique Methods 0.000 description 24
- 230000002093 peripheral effect Effects 0.000 description 12
- 230000033001 locomotion Effects 0.000 description 11
- 238000010586 diagram Methods 0.000 description 9
- 239000013078 crystal Substances 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000003313 weakening effect Effects 0.000 description 1
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- H—ELECTRICITY
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- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
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- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
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- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
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- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
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Abstract
Description
これにより、昇降ピンを移動させるためのモータ等の動力源を不要にすることができ、装置全体を大型化することなく、基板ホルダから基板を持ち上げることができるようになる。
このような構成であれば、斜め溝内を摺動するスライダが昇降ピンと一体的に設けられているので、この動力伝達機構を組み込むことにより、回転機構の動力を簡単に昇降ピンを移動させる動力に変換して伝達させることができる。
このような構成であれば、基板を基板ホルダから引き離す際には、動力伝達機構による昇降ピンへの動力伝達を可能としつつ、基板にイオンビームを照射するなどの処理を行う際には、昇降ピンに動力を伝達させることなく、これまで通りの基板処理を行うことができる。
イオンビーム照射装置100は、図1に示すように、イオン源1から引き出されたイオンビームIBを、質量分析器2により質量分析した後、プラテンと称される基板ホルダ3に保持さている基板Wに照射して所望のイオン種を注入するものである。
図8に示すように、一体回転部材21と相対回転部材22とは1又は複数のバネ等の付勢部材28により連結されており、相対回転部材22は一体回転部材21に対して相対的に回転可能に構成されている。
本実施形態においては、一体回転部材21は基板ホルダ3に取り付けられていることから、回転機構10から駆動力が発生させられた場合には、一体回転部材21は基板ホルダ3と一体となって回転運動をする。すなわち、一体回転部材21はシャフト11の回転運動と常に連動した回転運動を行う。
これに対し、相対回転部材22は一体回転部材21に対して付勢部材28により互いに引き合う方向(すなわち、一体回転部材21及び相対回転部材22が互いに逆向きに回転する方向)へ付勢されて連結されていることから、後述する伝達状態切替機構30が非伝達状態Bに切り替えられた場合においては、相対回転部材22は一体回転部材21とともに軸Sまわりで同軸に回転することができる。
一方、後述する伝達状態切替機構30が伝達状態Aに切り替えられた場合においては、相対回転部材22は後述するストッパ部31により回転不能とされるため、一体回転部材21が駆動源10から受ける駆動力が付勢部材28の付勢力を上回った場合には一体回転部材は回転し、一体回転部材21が駆動源10から受ける駆動力が付勢部材28の付勢力とつり合った場合にはその位置で静止する。
ここでは、複数の斜め溝2hが周方向に沿って例えば等間隔に設けられている。ここでは昇降ピンPと同数の6つの斜め溝2hが周方向に沿って等間隔に設けられているが、斜め溝2hの数や配置は図示したものに限らず、適宜変更して構わない。
また、斜め溝は断面凹形状に限らず、一部または全体が外周面から内周面に貫通した形状をすべて含む。
ここで、一体回転部材23と相対回転部材22が同軸Sで相対的に回転可能であるため、斜め溝2hとスライダ23とも互いに同軸Sで相対的に回転可能である。したがって、斜め溝2hと斜め溝2h内に配置されたスライダ23の回転軌跡は一致するため、一体回転部材23と相対回転部材22がどのような回転運動をしてもスライダ23が斜め溝2hから抜けることはない。
伝達状態切替機構30は、図9に示すように、動力伝達機構20による昇降ピンPへの動力伝達を可能とする伝達状態Aと、動力伝達機構20による昇降ピンPへの動力伝達を不能とする非伝達状態Bとに切り替わるものである。
一方、伝達状態切替機構30は、基板ホルダ3が起立状態にある状態において非伝達状態Bとなり、この非伝達状態Bにおいて昇降ピンPへの動力伝達が遮断される。
この際、基板ホルダ3が起立状態にあることから、伝達状態切替機構30は、非伝達状態Bであるので、ツイスト角調整機構による回転動力は、昇降ピンPには伝達されず、基板ホルダ3、一体回転部材21、及び相対回転部材22が一体的に回転する。
その後、制御装置Cは、基板ホルダ3による静電チャックをオフする(S5)。
なお、第1平端部2hbにおいても同様であり、昇降ピンPが退避位置xにある状態において、その端部内面とスライダ23とが非接触な状態となるように設計されている。
具体的には、基板ホルダ3が倒伏状態にある場合、ツイスト角調整機構による基板ホルダ3の回転軸と、チルト角調整機構による基板ホルダ3の回転軸とは同軸上にあり、ツイスト角調整機構及びチルト角調整機構が、基板ホルダ3を互いに逆向きに互いに同じ角速度で回転させようとすることで、基板ホルダ3及び該基板ホルダ3に載置された基板Wは無回転状態となる。
かかる構成により、昇降ピンP及び搬送アーム4が同時に基板Wを持ち上げるように、基板保持装置200及び搬送アーム4が制御されることになる。なお、ここでいう同時に持ち上げるとは、昇降ピンPが上昇して基板Wに接触するタイミングと、搬送アーム4が持ち上がった基板Wに接触するタイミングとが必ずしも一致している必要はなく、一方が先に接触した後に他方が接触する場合も含む。
この搬送アーム4によって基板Wを持ち上げる際、上述したように、基板Wを無回転状態にしているので、搬送アーム4と基板Wの裏面とが擦れることを防ぐことができ、パーティクルの発生や基板Wの損傷などを抑制することができる。
これにより、装置全体を大掛かりで高価なものにすることなく、基板Wを基板ホルダ3から持ち上げることが可能となる。
この場合、昇降ピンPを用いて基板Wを持ち上げた後、搬送アーム4を基板Wの外周部の下方に差し込んで持ち上げて、基板ホルダ3から引き離すようにすれば良い。
W ・・・基板
IB ・・・イオンビーム
3 ・・・基板ホルダ
4 ・・・搬送アーム
200・・・基板保持装置
10 ・・・回転機構(ツイスト角調整機構)
P ・・・昇降ピン
3h ・・・貫通孔
20 ・・・動力伝達機構
30 ・・・伝達状態切替機構
Claims (3)
- 基板を保持する基板ホルダと、
前記基板ホルダを回転させる回転機構と、
前記基板ホルダの基板載置面よりも下方に位置する退避位置、及び、当該基板載置面から突出する突出位置の間を昇降移動する複数の昇降ピンと、
前記回転機構及び前記昇降ピンの間に介在して設けられ、前記回転機構の前記基板ホルダを回転させる動力を、前記昇降ピンを前記退避位置及び前記突出位置の間で移動させる動力に変換して前記昇降ピンに伝達する動力伝達機構とを具備する、基板保持装置。 - 前記動力伝達機構が、
前記基板ホルダに取り付けられて、該基板ホルダとともに回転する一体回転部材と、
前記一体回転部材の回転軸周りに、該一体回転部材に対して相対的に回転可能な相対回転部材と、
前記一体回転部材又は前記相対回転部材の一方に設けられた斜め溝と、
前記一体回転部材又は前記相対回転部材の他方に設けられて前記斜め溝を摺動するとともに、前記昇降ピンと一体的に設けられたスライダとを備える、請求項1記載の基板保持装置。 - 前記基板ホルダが倒伏状態と起立状態との間を移動可能に構成されたものであって、
前記動力伝達機構による前記昇降ピンへの動力伝達を可能とする伝達状態と、前記動力伝達機構による前記昇降ピンへの動力伝達を不能とする非伝達状態とに切り替わる伝達状態切替機構をさらに具備し、
前記基板ホルダが前記倒伏状態から前記起立状態に移動した場合に、前記伝達状態切替機構が前記伝達状態から前記非伝達状態に切り替わり、前記基板ホルダが前記起立状態から前記倒伏状態に移動した場合に、前記伝達状態切替機構が前記非伝達状態から前記伝達状態に切り替わる、請求項1記載の基板保持装置。
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