JP2020096055A - 成膜装置及び成膜方法 - Google Patents
成膜装置及び成膜方法 Download PDFInfo
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- C30B7/005—Epitaxial layer growth
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4402—Reduction of impurities in the source gas
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/4486—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by producing an aerosol and subsequent evaporation of the droplets or particles
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- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/10—Heating of the reaction chamber or the substrate
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- C10—PETROLEUM, GAS OR COKE INDUSTRIES; TECHNICAL GASES CONTAINING CARBON MONOXIDE; FUELS; LUBRICANTS; PEAT
- C10B—DESTRUCTIVE DISTILLATION OF CARBONACEOUS MATERIALS FOR PRODUCTION OF GAS, COKE, TAR, OR SIMILAR MATERIALS
- C10B25/00—Doors or closures for coke ovens
- C10B25/02—Doors; Door frames
- C10B25/08—Closing and opening the doors
- C10B25/12—Closing and opening the doors for ovens with horizontal chambers
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
- C23C16/342—Boron nitride
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/403—Oxides of aluminium, magnesium or beryllium
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B19/00—Liquid-phase epitaxial-layer growth
- C30B19/08—Heating of the reaction chamber or the substrate
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
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- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
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- C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
- C30B7/14—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions the crystallising materials being formed by chemical reactions in the solution
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Crystallography & Structural Chemistry (AREA)
- Mechanical Engineering (AREA)
- Inorganic Chemistry (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Dispersion Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
12 :加熱炉
13 :基板ステージ
14 :ヒータ
20 :ミスト供給装置
22 :ミスト発生槽
24 :水槽
26 :溶液貯留槽
28 :超音波振動子
40 :ミスト供給路
42 :搬送ガス供給路
44 :希釈ガス供給路
58 :水
60 :溶液
62 :ミスト
64 :搬送ガス
66 :希釈ガス
70 :基板
80 :排出管
90 :コーティング層
Claims (3)
- 基体の表面に溶液のミストを供給することによって前記基体の前記表面に膜を成長させる成膜装置であって、
前記基体を収容して加熱する加熱炉と、
前記加熱炉に前記溶液の前記ミストを供給するミスト供給装置と、
を有しており、
前記成膜装置のうちの前記ミストに曝される部分の少なくとも一部が、窒化ホウ素を含む材料により構成されている、成膜装置。 - 前記加熱炉の内面の少なくとも一部が窒化ホウ素を含む前記材料により構成されている、
請求項1の成膜装置。 - 請求項1の成膜装置を用いて前記膜を成長させる成膜方法であって、
窒化ホウ素を含む前記材料に、前記溶液に含まれる成分を含む液体または前記液体のミストを供給することによって、窒化ホウ素を含む前記材料の表面をコーティングする工程と、
コーティングする前記工程の後に、前記加熱炉内に前記基体を配置した状態で前記ミスト供給装置から前記加熱炉に前記溶液の前記ミストを供給することによって前記基体の前記表面に前記膜を成長させる工程、
を有する成膜方法。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018231958A JP7174950B2 (ja) | 2018-12-11 | 2018-12-11 | 成膜方法 |
DE102019131158.6A DE102019131158A1 (de) | 2018-12-11 | 2019-11-19 | Filmbildungsvorrichtung und filmbildungsverfahren |
US16/705,432 US11142842B2 (en) | 2018-12-11 | 2019-12-06 | Film formation apparatus and film formation method |
CN201911253610.1A CN111304627B (zh) | 2018-12-11 | 2019-12-09 | 成膜装置及成膜方法 |
KR1020190163415A KR102331232B1 (ko) | 2018-12-11 | 2019-12-10 | 성막 장치 및 성막 방법 |
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JP2018231958A JP7174950B2 (ja) | 2018-12-11 | 2018-12-11 | 成膜方法 |
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JP2020096055A true JP2020096055A (ja) | 2020-06-18 |
JP7174950B2 JP7174950B2 (ja) | 2022-11-18 |
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JP2018231958A Active JP7174950B2 (ja) | 2018-12-11 | 2018-12-11 | 成膜方法 |
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US (1) | US11142842B2 (ja) |
JP (1) | JP7174950B2 (ja) |
KR (1) | KR102331232B1 (ja) |
CN (1) | CN111304627B (ja) |
DE (1) | DE102019131158A1 (ja) |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
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JPS6285425A (ja) * | 1985-10-09 | 1987-04-18 | Fujitsu Ltd | 気相成長装置 |
JPH08186103A (ja) * | 1994-12-28 | 1996-07-16 | Mitsubishi Electric Corp | 薄膜の堆積装置 |
JP2015070248A (ja) * | 2013-10-01 | 2015-04-13 | 株式会社Flosfia | 酸化物薄膜及びその製造方法 |
JP2017168524A (ja) * | 2016-03-14 | 2017-09-21 | 株式会社東芝 | 半導体製造装置 |
Family Cites Families (11)
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US6110531A (en) * | 1991-02-25 | 2000-08-29 | Symetrix Corporation | Method and apparatus for preparing integrated circuit thin films by chemical vapor deposition |
US6143063A (en) * | 1996-03-04 | 2000-11-07 | Symetrix Corporation | Misted precursor deposition apparatus and method with improved mist and mist flow |
DE10009598A1 (de) * | 2000-02-29 | 2001-09-06 | Bosch Gmbh Robert | Verfahren und Vorrichtung zur Abscheidung einer Beschichtung auf einem Substrat durch Versprühen einer Flüssigkeit |
JP2007070695A (ja) * | 2005-09-07 | 2007-03-22 | Canon Inc | 堆積膜形成方法 |
US8728241B2 (en) * | 2010-12-08 | 2014-05-20 | Intermolecular, Inc. | Combinatorial site-isolated deposition of thin films from a liquid source |
KR101270282B1 (ko) * | 2011-04-19 | 2013-05-31 | 부산대학교 산학협력단 | 저마찰 코팅 필름 및 그 제조방법 |
JP2013124201A (ja) * | 2011-12-14 | 2013-06-24 | Tokyo Electron Ltd | 窒化ガリウム膜の成膜装置および成膜方法ならびに水素化ガリウム発生器 |
US9082619B2 (en) * | 2012-07-09 | 2015-07-14 | International Solar Electric Technology, Inc. | Methods and apparatuses for forming semiconductor films |
WO2015161082A1 (en) * | 2014-04-16 | 2015-10-22 | Varel International, Ind., L.P. | Industrial tools with thermoset coating |
CN204455392U (zh) | 2015-02-12 | 2015-07-08 | 新永裕应用科技材料股份有限公司 | 气相成长石墨纤维组成物的生产系统 |
US20180097073A1 (en) | 2016-10-03 | 2018-04-05 | Flosfia Inc. | Semiconductor device and semiconductor system including semiconductor device |
-
2018
- 2018-12-11 JP JP2018231958A patent/JP7174950B2/ja active Active
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2019
- 2019-11-19 DE DE102019131158.6A patent/DE102019131158A1/de active Pending
- 2019-12-06 US US16/705,432 patent/US11142842B2/en active Active
- 2019-12-09 CN CN201911253610.1A patent/CN111304627B/zh active Active
- 2019-12-10 KR KR1020190163415A patent/KR102331232B1/ko active IP Right Grant
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6285425A (ja) * | 1985-10-09 | 1987-04-18 | Fujitsu Ltd | 気相成長装置 |
JPH08186103A (ja) * | 1994-12-28 | 1996-07-16 | Mitsubishi Electric Corp | 薄膜の堆積装置 |
JP2015070248A (ja) * | 2013-10-01 | 2015-04-13 | 株式会社Flosfia | 酸化物薄膜及びその製造方法 |
JP2017168524A (ja) * | 2016-03-14 | 2017-09-21 | 株式会社東芝 | 半導体製造装置 |
Also Published As
Publication number | Publication date |
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CN111304627B (zh) | 2023-06-06 |
DE102019131158A1 (de) | 2020-06-18 |
KR102331232B1 (ko) | 2021-11-25 |
US20200181795A1 (en) | 2020-06-11 |
JP7174950B2 (ja) | 2022-11-18 |
CN111304627A (zh) | 2020-06-19 |
US11142842B2 (en) | 2021-10-12 |
KR20200071680A (ko) | 2020-06-19 |
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