JP2020083671A5 - - Google Patents

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JP2020083671A5
JP2020083671A5 JP2018215724A JP2018215724A JP2020083671A5 JP 2020083671 A5 JP2020083671 A5 JP 2020083671A5 JP 2018215724 A JP2018215724 A JP 2018215724A JP 2018215724 A JP2018215724 A JP 2018215724A JP 2020083671 A5 JP2020083671 A5 JP 2020083671A5
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Japan
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contrast ratio
huge
downfall
defect
removing method
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JP2018215724A
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JP7204436B2 (ja
JP2020083671A (ja
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JP2018215724A 2018-11-16 2018-11-16 欠陥除去方法及びＳｉＣエピタキシャルウェハの製造方法 Active JP7204436B2 (ja)

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Application Number Priority Date Filing Date Title
JP2018215724A JP7204436B2 (ja) 2018-11-16 2018-11-16 欠陥除去方法及びＳｉＣエピタキシャルウェハの製造方法

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Application Number Priority Date Filing Date Title
JP2018215724A JP7204436B2 (ja) 2018-11-16 2018-11-16 欠陥除去方法及びＳｉＣエピタキシャルウェハの製造方法

Publications (3)

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JP2020083671A JP2020083671A (ja) 2020-06-04
JP2020083671A5 true JP2020083671A5 (zh) 2021-12-23
JP7204436B2 JP7204436B2 (ja) 2023-01-16

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JP2018215724A Active JP7204436B2 (ja) 2018-11-16 2018-11-16 欠陥除去方法及びＳｉＣエピタキシャルウェハの製造方法

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Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20230261057A1 (en) * 2020-07-02 2023-08-17 Sumitomo Electric Industries, Ltd. Silicon carbide epitaxial substrate and method of manufacturing silicon carbide epitaxial substrate
US20240145229A1 (en) * 2021-03-12 2024-05-02 Sumitomo Electric Industries, Ltd. Silicon carbide substrate and method of manufacturing silicon carbide substrate

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4716148B1 (ja) * 2010-03-30 2011-07-06 レーザーテック株式会社 検査装置並びに欠陥分類方法及び欠陥検出方法
JP6493690B2 (ja) * 2016-08-31 2019-04-03 昭和電工株式会社 ＳｉＣエピタキシャルウェハ及びその製造方法、並びに、ラージピット欠陥検出方法、欠陥識別方法
JP6459132B2 (ja) * 2016-08-31 2019-01-30 昭和電工株式会社 ＳｉＣエピタキシャルウェハ及びその製造方法、並びに、欠陥識別方法
JP6820191B2 (ja) * 2016-12-14 2021-01-27 昭和電工株式会社 半導体ウェハの評価方法

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