JP2020080405A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2020080405A5 JP2020080405A5 JP2019194604A JP2019194604A JP2020080405A5 JP 2020080405 A5 JP2020080405 A5 JP 2020080405A5 JP 2019194604 A JP2019194604 A JP 2019194604A JP 2019194604 A JP2019194604 A JP 2019194604A JP 2020080405 A5 JP2020080405 A5 JP 2020080405A5
- Authority
- JP
- Japan
- Prior art keywords
- etch
- etching
- excess metal
- layer
- dielectric layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 claims 20
- 239000002184 metal Substances 0.000 claims 17
- 229910052751 metal Inorganic materials 0.000 claims 17
- 238000005530 etching Methods 0.000 claims 7
- 230000004888 barrier function Effects 0.000 claims 6
- 239000000126 substance Substances 0.000 claims 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims 3
- 229910052802 copper Inorganic materials 0.000 claims 3
- 239000010949 copper Substances 0.000 claims 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims 2
- 238000001636 atomic emission spectroscopy Methods 0.000 claims 2
- 238000001312 dry etching Methods 0.000 claims 2
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 claims 2
- 229910052756 noble gas Inorganic materials 0.000 claims 2
- 238000001020 plasma etching Methods 0.000 claims 2
- 238000001004 secondary ion mass spectrometry Methods 0.000 claims 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims 1
- 239000004642 Polyimide Substances 0.000 claims 1
- 229910052786 argon Inorganic materials 0.000 claims 1
- 239000000460 chlorine Substances 0.000 claims 1
- 229910052801 chlorine Inorganic materials 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 claims 1
- 229920002577 polybenzoxazole Polymers 0.000 claims 1
- 229920001721 polyimide Polymers 0.000 claims 1
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 claims 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB1817370.8 | 2018-10-25 | ||
| GBGB1817370.8A GB201817370D0 (en) | 2018-10-25 | 2018-10-25 | A method of fabricating integrated circuits |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2020080405A JP2020080405A (ja) | 2020-05-28 |
| JP2020080405A5 true JP2020080405A5 (enExample) | 2022-10-21 |
| JP7278194B2 JP7278194B2 (ja) | 2023-05-19 |
Family
ID=64560369
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2019194604A Active JP7278194B2 (ja) | 2018-10-25 | 2019-10-25 | 集積回路を製造する方法 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US11361975B2 (enExample) |
| EP (1) | EP3644352A1 (enExample) |
| JP (1) | JP7278194B2 (enExample) |
| KR (1) | KR102542747B1 (enExample) |
| CN (1) | CN111106006B (enExample) |
| GB (1) | GB201817370D0 (enExample) |
| TW (1) | TWI801672B (enExample) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114361057B (zh) * | 2021-12-27 | 2025-07-22 | 粤芯半导体技术股份有限公司 | 半导体器件的缺陷检测方法及电子设备 |
Family Cites Families (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5242536A (en) * | 1990-12-20 | 1993-09-07 | Lsi Logic Corporation | Anisotropic polysilicon etching process |
| US5362356A (en) * | 1990-12-20 | 1994-11-08 | Lsi Logic Corporation | Plasma etching process control |
| JPH05259127A (ja) * | 1992-01-14 | 1993-10-08 | Lsi Logic Corp | プラズマエッチングにおけるエッチング監視方法 |
| KR100293830B1 (ko) * | 1992-06-22 | 2001-09-17 | 리차드 에이치. 로브그렌 | 플라즈마 처리 쳄버내의 잔류물 제거를 위한 플라즈마 정결방법 |
| US6759263B2 (en) * | 2002-08-29 | 2004-07-06 | Chentsau Ying | Method of patterning a layer of magnetic material |
| DE102005004360A1 (de) * | 2005-01-31 | 2006-08-17 | Advanced Micro Devices, Inc., Sunnyvale | Effizientes Verfahren zum Herstellen und Zusammenfügen eines mikroelektronischen Chips mit Lothöckern |
| TWI370515B (en) * | 2006-09-29 | 2012-08-11 | Megica Corp | Circuit component |
| US8659165B2 (en) * | 2008-08-12 | 2014-02-25 | Texas Instruments Incorporated | Contact and VIA interconnects using metal around dielectric pillars |
| US7687311B1 (en) | 2008-11-13 | 2010-03-30 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for producing stackable dies |
| US20110155692A1 (en) * | 2009-12-30 | 2011-06-30 | Tzong-Liang Yau | Method of forming patterns |
| US20120009777A1 (en) * | 2010-07-07 | 2012-01-12 | Taiwan Semiconductor Manufacturing Company, Ltd. | UBM Etching Methods |
| CN103107085B (zh) | 2013-01-31 | 2016-02-10 | 电子科技大学 | 一种NiCr薄膜的干法刻蚀工艺 |
| US20140252571A1 (en) * | 2013-03-06 | 2014-09-11 | Maxim Integrated Products, Inc. | Wafer-level package mitigated undercut |
| US20150048496A1 (en) | 2013-08-13 | 2015-02-19 | Macrotech Technology Inc. | Fabrication process and structure to form bumps aligned on tsv on chip backside |
| US20160099173A1 (en) * | 2014-10-03 | 2016-04-07 | Applied Materials, Inc. | Methods for etching a barrier layer for an interconnection structure for semiconductor applications |
| CN105355574B (zh) * | 2015-11-13 | 2018-12-11 | 颀中科技（苏州）有限公司 | 镍金凸块的制作方法及镍金凸块组件 |
| US10297551B2 (en) * | 2016-08-12 | 2019-05-21 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method of manufacturing redistribution circuit structure and method of manufacturing integrated fan-out package |
| JP6702108B2 (ja) | 2016-09-14 | 2020-05-27 | 富士通株式会社 | 端子構造、半導体装置、電子装置及び端子の形成方法 |
-
2018
- 2018-10-25 GB GBGB1817370.8A patent/GB201817370D0/en not_active Ceased
-
2019
- 2019-09-27 EP EP19200138.6A patent/EP3644352A1/en active Pending
- 2019-10-01 TW TW108135542A patent/TWI801672B/zh active
- 2019-10-14 US US16/601,358 patent/US11361975B2/en active Active
- 2019-10-15 CN CN201910976808.6A patent/CN111106006B/zh active Active
- 2019-10-24 KR KR1020190133063A patent/KR102542747B1/ko active Active
- 2019-10-25 JP JP2019194604A patent/JP7278194B2/ja active Active
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US10049891B1 (en) | Selective in situ cobalt residue removal | |
| EP0987745B1 (en) | Metallization etching method using a hard mask layer | |
| US5792672A (en) | Photoresist strip method | |
| JP2016105461A5 (enExample) | ||
| JP2020080405A5 (enExample) | ||
| JP2009065125A (ja) | 反応チャンバの光子誘起洗浄 | |
| TWI899090B (zh) | 蝕刻輪廓控制用之使用超薄釕金屬硬遮罩的方法 | |
| TW201546894A (zh) | 用於不須氧化一單元及源極線之乾剝蝕之方法 | |
| JP6708824B2 (ja) | 半導体構造のプレクリーニング | |
| JP7219521B2 (ja) | プラチナパターニングのための犠牲層 | |
| TWI801672B (zh) | 製造積體電路之方法，及積體電路 | |
| CN101414578A (zh) | 用于形成半导体器件中的金属线的方法 | |
| JPH07106308A (ja) | ドライエッチング方法 | |
| US6537907B1 (en) | Self sidewall aluminum fluoride, (SSWAF), protection | |
| KR19980044194A (ko) | 반도체 소자의 금속배선 형성방법 | |
| JP3003222B2 (ja) | 配線形成方法 | |
| JP2001351903A (ja) | 半導体製造方法および半導体装置 | |
| KR20200008030A (ko) | 구리 패터닝을 위한 플라즈마 에칭 | |
| JP2003203974A (ja) | 半導体装置の製造方法 | |
| KR20100058355A (ko) | 반도체 소자용 금속배선의 후처리방법 | |
| CN100466223C (zh) | 形成铜线的方法 | |
| JPH06232093A (ja) | 半導体装置の製造方法 | |
| JP6007754B2 (ja) | 配線構造の製造方法 | |
| CN120660179A (zh) | 用于含钛膜去除的系统和方法 | |
| KR20020068621A (ko) | 반도체 소자의 배선 형성방법 |