JP2020064912A - 撮像装置の製造方法 - Google Patents
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- 238000003384 imaging method Methods 0.000 title claims abstract description 60
- 238000004519 manufacturing process Methods 0.000 title claims description 32
- 239000004065 semiconductor Substances 0.000 claims abstract description 353
- 238000009792 diffusion process Methods 0.000 claims abstract description 150
- 239000000758 substrate Substances 0.000 claims abstract description 114
- 238000006243 chemical reaction Methods 0.000 claims abstract description 76
- 239000012535 impurity Substances 0.000 claims description 84
- 238000000034 method Methods 0.000 claims description 20
- 239000000203 mixture Substances 0.000 claims description 17
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 9
- 229920005591 polysilicon Polymers 0.000 claims description 9
- 238000001312 dry etching Methods 0.000 claims description 7
- 238000001039 wet etching Methods 0.000 claims description 7
- 238000010438 heat treatment Methods 0.000 claims description 6
- 238000003860 storage Methods 0.000 abstract description 33
- 239000010410 layer Substances 0.000 description 291
- 230000003321 amplification Effects 0.000 description 30
- 238000003199 nucleic acid amplification method Methods 0.000 description 30
- 238000002955 isolation Methods 0.000 description 18
- 230000002093 peripheral effect Effects 0.000 description 10
- 238000001514 detection method Methods 0.000 description 8
- 239000011229 interlayer Substances 0.000 description 8
- 230000000875 corresponding effect Effects 0.000 description 7
- 238000005530 etching Methods 0.000 description 7
- 230000007547 defect Effects 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 238000012986 modification Methods 0.000 description 5
- 230000004048 modification Effects 0.000 description 5
- 229910052814 silicon oxide Inorganic materials 0.000 description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 4
- 239000000470 constituent Substances 0.000 description 4
- 230000005684 electric field Effects 0.000 description 4
- 229910052698 phosphorus Inorganic materials 0.000 description 4
- 239000011574 phosphorus Substances 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 238000009825 accumulation Methods 0.000 description 3
- 230000001276 controlling effect Effects 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910044991 metal oxide Inorganic materials 0.000 description 3
- 150000004706 metal oxides Chemical class 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000002349 favourable effect Effects 0.000 description 2
- 229910010272 inorganic material Inorganic materials 0.000 description 2
- 239000011147 inorganic material Substances 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 238000009751 slip forming Methods 0.000 description 2
- 230000001629 suppression Effects 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000002730 additional effect Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000002596 correlated effect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 230000014509 gene expression Effects 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000002040 relaxant effect Effects 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
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Abstract
Description
本開示の一態様の概要は以下のとおりである。
図1は、本実施の形態に係る撮像装置の構成を示す図である。図1に示すように、本実施の形態に係る撮像装置100は、半導体基板60に形成された複数の画素10および周辺回路40を有する。各画素10は、半導体基板60の上方に配置された光電変換部12を含む。つまり、本開示に係る撮像装置の一例として、積層型の撮像装置100について説明する。
以上、本開示に係る撮像装置およびその製造方法について、実施の形態および変形例に基づいて説明したが、本開示は、これらの実施の形態および変形例に限定されるものではない。本開示の主旨を逸脱しない限り、当業者が思いつく各種変形を実施の形態および変形例に施したものや、実施の形態および変形例における一部の構成要素を組み合わせて構築される別の形態も、本開示の範囲に含まれる。
12 光電変換部
12a 画素電極
12b 光電変換層
12c 透明電極
14 信号検出回路
16 フィードバック回路
22 増幅トランジスタ
22e、24e、26e ゲート電極
24 アドレストランジスタ
26 リセットトランジスタ
26a 第1半導体膜
26b 第2半導体膜
26e1 第3半導体層
26e2 第4半導体層
32 電源配線
34 アドレス信号線
35 垂直信号線
36 リセット信号線
39 蓄積制御線
40 周辺回路
42 負荷回路
44 カラム信号処理回路
46 垂直走査回路
48 水平信号読み出し回路
49 水平共通信号線
50 反転増幅器
53 フィードバック線
60 半導体基板
61 支持基板
61p、63p、65p p型半導体層
62n n型半導体層
64 p型領域
66p p型不純物領域
67a 第1領域
67b 第2領域
67n 第1拡散領域
68an、68bn、68dn 第2拡散領域
68cn 第3拡散領域
69 素子分離領域
70、71、90a、90b、90c、90d 絶縁層
70a 絶縁膜
80 配線構造
80a、80b、80c、80d 配線層
90 層間絶縁層
100 撮像装置
R1 撮像領域
R2 周辺領域
cp1、cp2、cp3、cp4 コンタクトプラグ
cp1a 第1半導体層
cp1b 第2半導体層
cph1、cph2、cph3、cph4 貫通孔
h1、h2、h3、h4、h5、h6、h7、h8、h9、h10、h11 コンタクトホール
pa1、pa2、pa3、pa4、pa5、pa6、pa7、pb、pc、pd プラグ
Claims (15)
- 半導体基板と、
複数の画素と、を備え、
前記複数の画素のそれぞれは、
入射光を電荷に変換する光電変換部と、
前記半導体基板中に位置し、前記光電変換部に電気的に接続された拡散領域と、
前記拡散領域をソースおよびドレインの一方として含み、かつ、ゲートを備える第1トランジスタと、
前記拡散領域に直接接続され、前記光電変換部に電気的に接続され、半導体を含むプラグと、
を備え、
前記半導体基板の表面からの前記プラグの高さと前記ゲートの高さとは、互いに等しい、
撮像装置。 - 前記プラグと前記ゲートとは、互いに同一の組成を有する、
請求項1に記載の撮像装置。 - 前記プラグは、
半導体を含む第1層と、
前記第1層上に位置し、半導体を含む第2層と、を有する、
請求項1または請求項2に記載の撮像装置。 - 前記ゲートは、
半導体を含む第3層と、
前記第3層上に位置し、半導体を含む第4層と、を有する、
請求項3に記載の撮像装置。 - 前記第1層と前記第3層との組成は、互いに同一であり、
前記第2層と前記第4層との組成は、互いに同一である、
請求項4に記載の撮像装置。 - 前記第1層、前記第2層、前記第3層、および前記第4層の組成は、互いに同一である、
請求項4または請求項5に記載の撮像装置。 - 前記第1層は、貫通孔を有し、
前記第2層は、前記貫通孔を介して前記拡散領域に直接接続されている、
請求項3から請求項6のいずれか一項に記載の撮像装置。 - 拡散領域を有する半導体基板の上方に半導体膜を形成する第1工程と、
前記半導体膜の一部を除去することで、前記拡散領域に直接接続されたプラグと、前記拡散領域をソースおよびドレインの一方として含む第1トランジスタのゲートと、を形成する第2工程と、
前記拡散領域および前記プラグに電気的に接続され、入射光を電荷に変換する光電変換部を形成する第3工程と、を含み、
前記半導体基板の表面からの前記プラグの高さと前記ゲートの高さとは、互いに等しい、
撮像装置の製造方法。 - 前記第1工程は、
前記半導体基板上に位置する絶縁膜上に、第1半導体膜を形成する第4工程と、
前記絶縁膜および前記第1半導体膜の、平面視において前記拡散領域に重なる第1領域に位置する部分を除去し、コンタクトホールを形成する第5工程と、
前記コンタクトホール中および前記第1半導体膜上に、第2半導体膜を形成する第6工程と、を含み、
前記第2工程では、前記第1半導体膜および前記第2半導体膜のうち、前記第1領域とは異なる第2領域に位置する部分を除去することで、前記プラグと前記ゲートとを形成する、
請求項8に記載の撮像装置の製造方法。 - 前記第5工程において、前記第1半導体膜の前記第1領域に位置する部分を、ドライエッチングにより除去し、前記絶縁膜の前記第1領域に位置する部分を、ウェットエッチングにより除去する、
請求項9に記載の撮像装置の製造方法。 - 前記第1工程は、さらに、前記第6工程の後に行われる、前記第1半導体膜および前記第2半導体膜に第1導電型の不純物を注入する第7工程を含む、
請求項9または請求項10に記載の撮像装置の製造方法。 - 前記第1工程は、さらに、前記第4工程と前記第5工程との間に行われる、前記第1半導体膜に第1導電型の不純物を注入する第7工程を含む、
請求項9または請求項10に記載の撮像装置の製造方法。 - 前記第1工程は、さらに、前記第6工程の後に行われる、前記第2半導体膜に前記第1導電型の不純物を注入する第8工程を含む、
請求項12に記載の撮像装置の製造方法。 - 前記第1工程は、さらに、前記第7工程よりも後に行われる、前記半導体基板を加熱する第9工程を含む、
請求項11から請求項13のいずれか一項に記載の撮像装置の製造方法。 - 前記第1半導体膜および前記第2半導体膜はそれぞれ、ポリシリコン膜である、
請求項9から請求項14のいずれか一項に記載の撮像装置の製造方法。
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JP2018194563A JP6689936B2 (ja) | 2018-10-15 | 2018-10-15 | 撮像装置の製造方法 |
CN201910956285.9A CN111370433A (zh) | 2018-10-15 | 2019-10-09 | 摄像装置以及其制造方法 |
US16/599,794 US11024665B2 (en) | 2018-10-15 | 2019-10-11 | Imaging device and manufacturing method thereof |
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