JP2020027302A - 芳香族下層 - Google Patents
芳香族下層 Download PDFInfo
- Publication number
- JP2020027302A JP2020027302A JP2019142017A JP2019142017A JP2020027302A JP 2020027302 A JP2020027302 A JP 2020027302A JP 2019142017 A JP2019142017 A JP 2019142017A JP 2019142017 A JP2019142017 A JP 2019142017A JP 2020027302 A JP2020027302 A JP 2020027302A
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- Prior art keywords
- layer
- alkyl
- aryl
- independently
- attached
- Prior art date
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- Granted
Links
- 125000003118 aryl group Chemical group 0.000 title claims abstract description 33
- 239000010410 layer Substances 0.000 claims description 144
- 239000000758 substrate Substances 0.000 claims description 61
- 238000000034 method Methods 0.000 claims description 44
- 229910052799 carbon Inorganic materials 0.000 claims description 38
- 150000001875 compounds Chemical class 0.000 claims description 38
- 229920002120 photoresistant polymer Polymers 0.000 claims description 37
- 229910052717 sulfur Inorganic materials 0.000 claims description 36
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 34
- 229910052710 silicon Inorganic materials 0.000 claims description 34
- 239000010703 silicon Substances 0.000 claims description 34
- 229920000642 polymer Polymers 0.000 claims description 27
- 239000008199 coating composition Substances 0.000 claims description 20
- 229910052760 oxygen Inorganic materials 0.000 claims description 17
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical group [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 14
- 239000000126 substance Substances 0.000 claims description 14
- 238000000576 coating method Methods 0.000 claims description 13
- 125000002947 alkylene group Chemical group 0.000 claims description 12
- 125000000732 arylene group Chemical group 0.000 claims description 12
- 239000011248 coating agent Substances 0.000 claims description 12
- 125000001931 aliphatic group Chemical group 0.000 claims description 11
- 229910052739 hydrogen Inorganic materials 0.000 claims description 11
- 239000003960 organic solvent Substances 0.000 claims description 10
- 239000003795 chemical substances by application Substances 0.000 claims description 9
- 230000005855 radiation Effects 0.000 claims description 6
- 239000006117 anti-reflective coating Substances 0.000 claims description 4
- 238000000059 patterning Methods 0.000 claims description 4
- 239000000178 monomer Substances 0.000 abstract description 16
- 239000004065 semiconductor Substances 0.000 abstract description 16
- 238000004519 manufacturing process Methods 0.000 abstract description 7
- JWAZRIHNYRIHIV-UHFFFAOYSA-N 2-naphthol Chemical group C1=CC=CC2=CC(O)=CC=C21 JWAZRIHNYRIHIV-UHFFFAOYSA-N 0.000 abstract description 6
- 229920001519 homopolymer Polymers 0.000 abstract description 2
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical class OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 32
- 239000000203 mixture Substances 0.000 description 27
- LZCLXQDLBQLTDK-UHFFFAOYSA-N ethyl 2-hydroxypropanoate Chemical compound CCOC(=O)C(C)O LZCLXQDLBQLTDK-UHFFFAOYSA-N 0.000 description 16
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 15
- 239000000463 material Substances 0.000 description 15
- 238000011049 filling Methods 0.000 description 14
- 125000004429 atom Chemical group 0.000 description 13
- 238000005530 etching Methods 0.000 description 13
- 235000012431 wafers Nutrition 0.000 description 13
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 description 12
- 239000000243 solution Substances 0.000 description 12
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 10
- 239000002253 acid Substances 0.000 description 10
- 238000006243 chemical reaction Methods 0.000 description 10
- -1 phenylene -O- Chemical class 0.000 description 10
- 239000000047 product Substances 0.000 description 10
- 238000006116 polymerization reaction Methods 0.000 description 9
- 229940116333 ethyl lactate Drugs 0.000 description 8
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 description 8
- 239000002904 solvent Substances 0.000 description 8
- 125000001424 substituent group Chemical group 0.000 description 8
- 125000000217 alkyl group Chemical group 0.000 description 7
- 238000010304 firing Methods 0.000 description 7
- 238000004528 spin coating Methods 0.000 description 7
- 229910052736 halogen Inorganic materials 0.000 description 6
- 150000002367 halogens Chemical class 0.000 description 6
- 239000007787 solid Substances 0.000 description 6
- JOLQKTGDSGKSKJ-UHFFFAOYSA-N 1-ethoxypropan-2-ol Chemical compound CCOCC(C)O JOLQKTGDSGKSKJ-UHFFFAOYSA-N 0.000 description 5
- 238000001914 filtration Methods 0.000 description 5
- 125000001183 hydrocarbyl group Chemical group 0.000 description 5
- 125000000743 hydrocarbylene group Chemical group 0.000 description 5
- 239000011541 reaction mixture Substances 0.000 description 5
- 239000004971 Cross linker Substances 0.000 description 4
- 150000007513 acids Chemical class 0.000 description 4
- 239000002318 adhesion promoter Substances 0.000 description 4
- 239000011247 coating layer Substances 0.000 description 4
- 239000003431 cross linking reagent Substances 0.000 description 4
- 125000005843 halogen group Chemical group 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 125000004404 heteroalkyl group Chemical group 0.000 description 4
- 238000005691 oxidative coupling reaction Methods 0.000 description 4
- 229920005989 resin Polymers 0.000 description 4
- 239000011347 resin Substances 0.000 description 4
- 239000004593 Epoxy Substances 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 239000000654 additive Substances 0.000 description 3
- 125000003342 alkenyl group Chemical group 0.000 description 3
- 125000000304 alkynyl group Chemical group 0.000 description 3
- 230000003667 anti-reflective effect Effects 0.000 description 3
- 239000012298 atmosphere Substances 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical group [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 239000003054 catalyst Substances 0.000 description 3
- 125000005647 linker group Chemical group 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 3
- 239000001301 oxygen Chemical group 0.000 description 3
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 239000011241 protective layer Substances 0.000 description 3
- 239000004094 surface-active agent Substances 0.000 description 3
- 125000006649 (C2-C20) alkynyl group Chemical group 0.000 description 2
- YEJRWHAVMIAJKC-UHFFFAOYSA-N 4-Butyrolactone Chemical compound O=C1CCCO1 YEJRWHAVMIAJKC-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 2
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 2
- 239000005977 Ethylene Substances 0.000 description 2
- AFVFQIVMOAPDHO-UHFFFAOYSA-N Methanesulfonic acid Chemical compound CS(O)(=O)=O AFVFQIVMOAPDHO-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 125000004450 alkenylene group Chemical group 0.000 description 2
- 125000004419 alkynylene group Chemical group 0.000 description 2
- RDOXTESZEPMUJZ-UHFFFAOYSA-N anisole Chemical compound COC1=CC=CC=C1 RDOXTESZEPMUJZ-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 2
- 239000012776 electronic material Substances 0.000 description 2
- CATSNJVOTSVZJV-UHFFFAOYSA-N heptan-2-one Chemical compound CCCCCC(C)=O CATSNJVOTSVZJV-UHFFFAOYSA-N 0.000 description 2
- 125000005842 heteroatom Chemical group 0.000 description 2
- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 description 2
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 2
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 229920003986 novolac Polymers 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 125000000951 phenoxy group Chemical group [H]C1=C([H])C([H])=C(O*)C([H])=C1[H] 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 230000001737 promoting effect Effects 0.000 description 2
- 238000001878 scanning electron micrograph Methods 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 125000003107 substituted aryl group Chemical group 0.000 description 2
- JOXIMZWYDAKGHI-UHFFFAOYSA-N toluene-4-sulfonic acid Chemical compound CC1=CC=C(S(O)(=O)=O)C=C1 JOXIMZWYDAKGHI-UHFFFAOYSA-N 0.000 description 2
- WYTZZXDRDKSJID-UHFFFAOYSA-N (3-aminopropyl)triethoxysilane Chemical compound CCO[Si](OCC)(OCC)CCCN WYTZZXDRDKSJID-UHFFFAOYSA-N 0.000 description 1
- LEEANUDEDHYDTG-UHFFFAOYSA-N 1,2-dimethoxypropane Chemical compound COCC(C)OC LEEANUDEDHYDTG-UHFFFAOYSA-N 0.000 description 1
- JEIHSRORUWXJGF-UHFFFAOYSA-N 1-[(2-methylpropan-2-yl)oxy]propan-2-yl acetate Chemical compound CC(=O)OC(C)COC(C)(C)C JEIHSRORUWXJGF-UHFFFAOYSA-N 0.000 description 1
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 description 1
- WBIQQQGBSDOWNP-UHFFFAOYSA-N 2-dodecylbenzenesulfonic acid Chemical compound CCCCCCCCCCCCC1=CC=CC=C1S(O)(=O)=O WBIQQQGBSDOWNP-UHFFFAOYSA-N 0.000 description 1
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 description 1
- JSGVZVOGOQILFM-UHFFFAOYSA-N 3-methoxy-1-butanol Chemical compound COC(C)CCO JSGVZVOGOQILFM-UHFFFAOYSA-N 0.000 description 1
- MFKRHJVUCZRDTF-UHFFFAOYSA-N 3-methoxy-3-methylbutan-1-ol Chemical compound COC(C)(C)CCO MFKRHJVUCZRDTF-UHFFFAOYSA-N 0.000 description 1
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
- DKPFZGUDAPQIHT-UHFFFAOYSA-N Butyl acetate Natural products CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 description 1
- 125000003358 C2-C20 alkenyl group Chemical group 0.000 description 1
- 125000000739 C2-C30 alkenyl group Chemical group 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 description 1
- XXRCUYVCPSWGCC-UHFFFAOYSA-N Ethyl pyruvate Chemical compound CCOC(=O)C(C)=O XXRCUYVCPSWGCC-UHFFFAOYSA-N 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229920000877 Melamine resin Polymers 0.000 description 1
- XYVQFUJDGOBPQI-UHFFFAOYSA-N Methyl-2-hydoxyisobutyric acid Chemical compound COC(=O)C(C)(C)O XYVQFUJDGOBPQI-UHFFFAOYSA-N 0.000 description 1
- KWYHDKDOAIKMQN-UHFFFAOYSA-N N,N,N',N'-tetramethylethylenediamine Chemical compound CN(C)CCN(C)C KWYHDKDOAIKMQN-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical group [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 238000002835 absorbance Methods 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 125000005042 acyloxymethyl group Chemical group 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 150000001336 alkenes Chemical class 0.000 description 1
- 125000005529 alkyleneoxy group Chemical group 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 125000004653 anthracenylene group Chemical group 0.000 description 1
- 125000002029 aromatic hydrocarbon group Chemical group 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 238000001354 calcination Methods 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- VVXKYYDFGPZSOZ-UHFFFAOYSA-L chlorocopper;n,n,n',n'-tetramethylethane-1,2-diamine;dihydrate Chemical compound O.O.[Cu]Cl.[Cu]Cl.CN(C)CCN(C)C.CN(C)CCN(C)C VVXKYYDFGPZSOZ-UHFFFAOYSA-L 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000007822 coupling agent Substances 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 238000007766 curtain coating Methods 0.000 description 1
- 230000018044 dehydration Effects 0.000 description 1
- 238000006297 dehydration reaction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- SBZXBUIDTXKZTM-UHFFFAOYSA-N diglyme Chemical compound COCCOCCOC SBZXBUIDTXKZTM-UHFFFAOYSA-N 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 239000000539 dimer Substances 0.000 description 1
- 238000003618 dip coating Methods 0.000 description 1
- 229940060296 dodecylbenzenesulfonic acid Drugs 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- CCIVGXIOQKPBKL-UHFFFAOYSA-M ethanesulfonate Chemical compound CCS([O-])(=O)=O CCIVGXIOQKPBKL-UHFFFAOYSA-M 0.000 description 1
- FWDBOZPQNFPOLF-UHFFFAOYSA-N ethenyl(triethoxy)silane Chemical compound CCO[Si](OCC)(OCC)C=C FWDBOZPQNFPOLF-UHFFFAOYSA-N 0.000 description 1
- NKSJNEHGWDZZQF-UHFFFAOYSA-N ethenyl(trimethoxy)silane Chemical compound CO[Si](OC)(OC)C=C NKSJNEHGWDZZQF-UHFFFAOYSA-N 0.000 description 1
- 150000002170 ethers Chemical class 0.000 description 1
- BHXIWUJLHYHGSJ-UHFFFAOYSA-N ethyl 3-ethoxypropanoate Chemical compound CCOCCC(=O)OCC BHXIWUJLHYHGSJ-UHFFFAOYSA-N 0.000 description 1
- 229940117360 ethyl pyruvate Drugs 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 125000003983 fluorenyl group Chemical group C1(=CC=CC=2C3=CC=CC=C3CC12)* 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- UQSQSQZYBQSBJZ-UHFFFAOYSA-N fluorosulfonic acid Chemical compound OS(F)(=O)=O UQSQSQZYBQSBJZ-UHFFFAOYSA-N 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 125000000623 heterocyclic group Chemical group 0.000 description 1
- FUZZWVXGSFPDMH-UHFFFAOYSA-M hexanoate Chemical compound CCCCCC([O-])=O FUZZWVXGSFPDMH-UHFFFAOYSA-M 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 239000011630 iodine Substances 0.000 description 1
- 229910052740 iodine Inorganic materials 0.000 description 1
- 239000012948 isocyanate Substances 0.000 description 1
- 150000002513 isocyanates Chemical class 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 150000002596 lactones Chemical class 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229940098779 methanesulfonic acid Drugs 0.000 description 1
- UZKWTJUDCOPSNM-UHFFFAOYSA-N methoxybenzene Substances CCCCOC=C UZKWTJUDCOPSNM-UHFFFAOYSA-N 0.000 description 1
- BDJSOPWXYLFTNW-UHFFFAOYSA-N methyl 3-methoxypropanoate Chemical compound COCCC(=O)OC BDJSOPWXYLFTNW-UHFFFAOYSA-N 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 239000002736 nonionic surfactant Substances 0.000 description 1
- 239000012044 organic layer Substances 0.000 description 1
- 150000001282 organosilanes Chemical class 0.000 description 1
- 125000000843 phenylene group Chemical group C1(=C(C=CC=C1)*)* 0.000 description 1
- 229920000412 polyarylene Polymers 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 239000004848 polyfunctional curative Substances 0.000 description 1
- 229920006254 polymer film Polymers 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 1
- KCXFHTAICRTXLI-UHFFFAOYSA-N propane-1-sulfonic acid Chemical compound CCCS(O)(=O)=O KCXFHTAICRTXLI-UHFFFAOYSA-N 0.000 description 1
- 125000005548 pyrenylene group Chemical group 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 238000007761 roller coating Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- FZHAPNGMFPVSLP-UHFFFAOYSA-N silanamine Chemical compound [SiH3]N FZHAPNGMFPVSLP-UHFFFAOYSA-N 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 238000007764 slot die coating Methods 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000009987 spinning Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- 150000003460 sulfonic acids Chemical class 0.000 description 1
- 239000011593 sulfur Chemical group 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 238000010345 tape casting Methods 0.000 description 1
- WMOVHXAZOJBABW-UHFFFAOYSA-N tert-butyl acetate Chemical compound CC(=O)OC(C)(C)C WMOVHXAZOJBABW-UHFFFAOYSA-N 0.000 description 1
- 150000003568 thioethers Chemical class 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- MAKDTFFYCIMFQP-UHFFFAOYSA-N titanium tungsten Chemical compound [Ti].[W] MAKDTFFYCIMFQP-UHFFFAOYSA-N 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- ITMCEJHCFYSIIV-UHFFFAOYSA-N triflic acid Chemical compound OS(=O)(=O)C(F)(F)F ITMCEJHCFYSIIV-UHFFFAOYSA-N 0.000 description 1
- 239000013638 trimer Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000011179 visual inspection Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
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Abstract
Description
の繰り返し単位を含むポリマーである、工程と、(c)硬化性化合物の層を硬化させて下層を形成する工程と、(d)フォトレジストの層を下層上にコートする工程と、(e)フォトレジスト層を、マスクを通して化学線に露光する工程と、(f)露光されたフォトレジスト層を現像してレジストパターンを形成する工程と、(g)パターンを下層に転写して電子デバイス基板の一部分を露出させる工程とを含む方法を提供する。
の繰り返し単位を含むポリマーである、電子デバイスが本発明によって提供される。
の繰り返し単位を含むポリマーをさらに提供する。
の繰り返し単位を含むポリマーである、工程と、(c)硬化性化合物の層を硬化させて下層を形成する工程と、(d)フォトレジストの層を下層上にコートする工程と、(e)フォトレジスト層を、マスクを通して化学線に露光する工程と、(f)露光されたフォトレジスト層を現像してレジストパターンを形成する工程と、(g)パターンを下層に転写して電子デバイス基板の一部分を露出させる工程とを含む方法によって形成される。次に、基板をパターン化し、パターン化された下層を取り除く。好ましい一実施形態において、フォトレジストの層を下層の直接上にコートする。別の好ましい実施形態において、工程(d)前にシリコン含有組成物、有機反射防止組成物(BARC)およびそれらの組合せの1つ以上の層を下層の直接上にコートし、かつ任意選択的に硬化させて中心層を形成し、次にフォトレジストの層をシリコン含有組成物層、BARC層の1つ以上または各々の層の直接上にコートする。シリコン含有中心層が使用されるとき、工程(f)後かつ工程(g)前にパターンがシリコン含有中心層に転写される。
の繰り返し単位を含むポリマーである。Zの好ましいC1−100−ヒドロカルビレン部分は、C1−50−アルキレン、C2−50−アルケニレン、C2−50−アルキニレンおよびC5−30−アリーレン、より好ましくはC1−20−アルキレン、C2−20−アルケニレン、C2−20−アルキニレンおよびC5−30−アリーレンである。Zは、共有化学結合またはO、C(=O)、S、S(=O)、S(=O)2、N(R)、C1−50−ヒドロカルビレン、−O−(C1−20−アルキレン−O−)m1、−O−(C5−60−アリーレン−O−)m2およびC(R3)(R4)から選択される二価連結基であり、より好ましくは共有化学結合またはO、C(=O)、S、S(=O)2、C1−50−ヒドロカルビレン、−O−(C5−60−アリーレン−O−)m2およびC(R3)(R4)から選択される二価連結基であり、さらにより好ましくは共有化学結合、O、C(=O)、S、S(=O)2、C5−60−アリーレン、−O−(C5−60−アリーレン−O−)m2およびC(R3)(R4)から選択され、さらにより好ましくは共有化学結合、O、C(=O)、S、C5−60−アリーレン、−O−(C5−60−アリーレン−O−)m2およびC(R3)(R4)から選択されることが好ましい。Rは、好ましくは、H、C1−20−アルキルおよびC5−30−アリールから選択される。好ましくは、R1およびR2の各々は、独立に、H、ORおよびC1−30−ヒドロカルビル、より好ましくは独立にHまたはC1−30−ヒドロカルビル、さらにより好ましくはC10−15−ヒドロカルビルから選択される。さらにより好ましくは、1つのR1と、1つのR2と、Zとは、それらが結合されている原子と共に5または6員環を形成する。R1およびR2の好ましいC1−30−ヒドロカルビル部分は、C1−30−アルキル、C2−30−アルケニル、C2−30−アルキニルおよびC5−30−アリール、より好ましくはC1−20−アルキル、C1−20−アルケニル、C2−20−アルキニルおよびC5−30−アリールである。a1およびa2の各々=0〜2であり、より好ましくは0または1であることが好ましい。好ましい実施形態において、a1=a2であり、さらにより好ましくはa1=a2=0または1である。下付き文字n、m1およびm2の各々は、繰り返し単位の数を意味することを当業者は理解するであろう。好ましくは、m1およびm2の各々は、1〜50であり、より好ましくは1〜25、さらにより好ましくは1〜10である。n=2〜500、より好ましくは2〜100、さらにより好ましくは2〜50、さらにより好ましくは2〜20であることが好ましい。
のフルオレニル部分である。Z=Oであるとき、1つのR1と、1つのR2とは、共に6員環縮合複素環を形成し、より好ましくは、1つのR1と、1つのR2とは、共に以下の式
の部分を形成することがさらに好ましい。
の化合物である。式(2)のモノマーを重合させて、式(1)の繰り返し単位を有する硬化性ポリマーを形成する。式(2)のモノマーは、1位において非置換でなければならない。式(2)のモノマーは、式(1)の繰り返し単位において示されるように、2−ナフトール部分の1位において結合(すなわち重合)する。本硬化性ポリマーは、ポリマーの各末端が未反応2−ナフトール部分を終端とする、ホモポリマーである。式(2)の好ましいモノマーは、式(2−1)
のモノマーである。式(2−1)の好ましいモノマーは、式(2a)〜(2f)のモノマーである。
の繰り返し単位を含む1つ以上の硬化性化合物と、1つ以上の有機溶媒とを含む、工程と、(c)1つ以上の硬化性化合物を硬化させる温度に間隙充填組成物を加熱する工程とを含む。本組成物は、半導体基板の複数の間隙を実質的に充填する、好ましくは充填する、より好ましくは完全に充填する。
Claims (8)
- (a)電子デバイス基板を提供する工程と、(b)1つ以上の硬化性化合物を含むコーティング組成物の層を前記電子デバイス基板の表面上にコートする工程であって、前記1つ以上の硬化性化合物は、式(1)
の繰り返し単位を含むポリマーである、工程と、(c)前記硬化性化合物の前記層を硬化させて下層を形成する工程と、(d)フォトレジストの層を前記下層上にコートする工程と、(e)前記フォトレジスト層を、マスクを通して化学線に露光する工程と、(f)前記露光されたフォトレジスト層を現像してレジストパターンを形成する工程と、(g)前記パターンを前記下層に転写して前記電子デバイス基板の一部分を露出させる工程とを含む方法。 - 前記基板をパターン化する工程と、その後、前記パターン化された下層を取り除く工程とをさらに含む、請求項1に記載の方法。
- 工程(d)前にシリコン含有層、有機反射防止コーティング層およびそれらの組合せの1つ以上を前記下層の上にコートする工程をさらに含む、請求項1に記載の方法。
- 工程(f)後かつ工程(g)前に前記パターンを前記シリコン含有層、前記有機反射防止コーティング層および前記それらの組合せの前記1つ以上に転写する工程をさらに含む、請求項3に記載の方法。
- 前記コーティング組成物は、有機溶媒、硬化剤および表面均展剤の1つ以上をさらに含む、請求項1に記載の方法。
- 式(1)の前記繰り返し単位は、式:
- 電子デバイス基板であって、前記電子デバイス基板の表面上に重合単位として1つ以上の硬化性化合物を含むポリマーの層を有する電子デバイス基板を含む電子デバイスであって、前記1つ以上の硬化性化合物は、式(1)
の繰り返し単位を含むポリマーである、電子デバイス。 - 式(1)
の繰り返し単位を含むポリマー。
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JPWO2020145407A1 (ja) * | 2019-01-11 | 2021-11-18 | 三菱瓦斯化学株式会社 | 多環ポリフェノール樹脂、及び多環ポリフェノール樹脂の製造方法 |
WO2022009966A1 (ja) * | 2020-07-08 | 2022-01-13 | 三菱瓦斯化学株式会社 | 膜形成用組成物、レジスト組成物、感放射線性組成物、アモルファス膜の製造方法、レジストパターン形成方法、リソグラフィー用下層膜形成用組成物、リソグラフィー用下層膜の製造方法及び回路パターン形成方法、光学部材形成用組成物、膜形成用樹脂、レジスト樹脂、感放射線性樹脂、リソグラフィー用下層膜形成用樹脂 |
CN115968391A (zh) * | 2020-07-08 | 2023-04-14 | 三菱瓦斯化学株式会社 | 组合物、树脂、非晶质膜的制造方法、抗蚀图案形成方法、光刻用下层膜的制造方法及电路图案形成方法 |
CN115968391B (zh) * | 2020-07-08 | 2024-04-26 | 三菱瓦斯化学株式会社 | 组合物、树脂、非晶质膜的制造方法、抗蚀图案形成方法、光刻用下层膜的制造方法及电路图案形成方法 |
KR20230038645A (ko) | 2020-07-15 | 2023-03-21 | 미쯔비시 가스 케미칼 컴파니, 인코포레이티드 | 중합체, 조성물, 중합체의 제조방법, 조성물, 막형성용 조성물, 레지스트 조성물, 감방사선성 조성물, 리소그래피용 하층막형성용 조성물, 레지스트패턴 형성방법, 리소그래피용 하층막의 제조방법, 회로패턴 형성방법, 및 광학부재형성용 조성물 |
KR20230038652A (ko) | 2020-07-15 | 2023-03-21 | 미쯔비시 가스 케미칼 컴파니, 인코포레이티드 | 다환 폴리페놀 수지, 조성물, 다환 폴리페놀 수지의 제조방법, 막형성용 조성물, 레지스트 조성물, 레지스트패턴 형성방법, 감방사선성 조성물, 리소그래피용 하층막형성용 조성물, 리소그래피용 하층막의 제조방법, 회로패턴 형성방법, 및 광학부재형성용 조성물 |
KR20230129974A (ko) | 2021-01-19 | 2023-09-11 | 미쯔비시 가스 케미칼 컴파니, 인코포레이티드 | 중합체, 조성물, 중합체의 제조방법, 막형성용 조성물, 레지스트 조성물, 레지스트패턴 형성방법, 감방사선성 조성물, 리소그래피용 하층막형성용 조성물, 리소그래피용 하층막의 제조방법, 회로패턴 형성방법, 광학부재형성용 조성물 |
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KR102256217B1 (ko) | 2021-05-25 |
JP7007338B2 (ja) | 2022-01-24 |
TW202009250A (zh) | 2020-03-01 |
JP2024009902A (ja) | 2024-01-23 |
TWI769389B (zh) | 2022-07-01 |
KR20200020598A (ko) | 2020-02-26 |
CN110837205A (zh) | 2020-02-25 |
US10886119B2 (en) | 2021-01-05 |
US20200058494A1 (en) | 2020-02-20 |
JP2022003134A (ja) | 2022-01-11 |
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