JP2020025121A5 - - Google Patents

Download PDF

Info

Publication number
JP2020025121A5
JP2020025121A5 JP2019194259A JP2019194259A JP2020025121A5 JP 2020025121 A5 JP2020025121 A5 JP 2020025121A5 JP 2019194259 A JP2019194259 A JP 2019194259A JP 2019194259 A JP2019194259 A JP 2019194259A JP 2020025121 A5 JP2020025121 A5 JP 2020025121A5
Authority
JP
Japan
Prior art keywords
electronic device
semiconductor material
electron transport
metal
compartment
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2019194259A
Other languages
English (en)
Japanese (ja)
Other versions
JP2020025121A (ja
Filing date
Publication date
Priority claimed from EP14171326.3A external-priority patent/EP2887416B1/en
Application filed filed Critical
Publication of JP2020025121A publication Critical patent/JP2020025121A/ja
Publication of JP2020025121A5 publication Critical patent/JP2020025121A5/ja
Pending legal-status Critical Current

Links

JP2019194259A 2013-12-23 2019-10-25 ホスフィンオキシド母材及び金属ドーパントを含むｎ−ドープされた半導体材料 Pending JP2020025121A (ja)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
EP13199413.9 2013-12-23
EP13199413 2013-12-23
EP14171326.3A EP2887416B1 (en) 2013-12-23 2014-06-05 N-doped semiconducting material comprising phosphine oxide matrix and metal dopant
EP14171326.3 2014-06-05

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP2016542211A Division JP6832704B2 (ja) 2013-12-23 2014-12-23 ホスフィンオキシド母材及び金属ドーパントを含むｎ−ドープされた半導体材料

Publications (2)

Publication Number Publication Date
JP2020025121A JP2020025121A (ja) 2020-02-13
JP2020025121A5 true JP2020025121A5 (https=) 2020-10-08

Family

ID=49955145

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2016542211A Active JP6832704B2 (ja) 2013-12-23 2014-12-23 ホスフィンオキシド母材及び金属ドーパントを含むｎ−ドープされた半導体材料
JP2019194259A Pending JP2020025121A (ja) 2013-12-23 2019-10-25 ホスフィンオキシド母材及び金属ドーパントを含むｎ−ドープされた半導体材料

Family Applications Before (1)

Application Number Title Priority Date Filing Date
JP2016542211A Active JP6832704B2 (ja) 2013-12-23 2014-12-23 ホスフィンオキシド母材及び金属ドーパントを含むｎ−ドープされた半導体材料

Country Status (7)

Country Link
US (3) US20160322568A1 (https=)
EP (2) EP2887416B1 (https=)
JP (2) JP6832704B2 (https=)
KR (1) KR102339316B1 (https=)
CN (1) CN106062986B (https=)
ES (1) ES2673573T3 (https=)
WO (1) WO2015097232A1 (https=)

Families Citing this family (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2811000B1 (en) * 2013-06-06 2017-12-13 Novaled GmbH Organic electronic device
EP4084108B1 (en) * 2015-08-18 2025-11-12 Novaled GmbH Metal amides for use as hil for an organic light-emitting diode (oled)
KR102420453B1 (ko) * 2015-09-09 2022-07-13 엘지디스플레이 주식회사 유기발광 표시장치 및 이를 적용한 차량용 조명장치
EP3147961A1 (en) * 2015-09-28 2017-03-29 Novaled GmbH Organic electroluminescent device
KR102494453B1 (ko) * 2015-10-05 2023-02-02 삼성디스플레이 주식회사 유기 전계 발광 소자 및 이를 포함하는 표시 장치
WO2017061832A1 (ko) * 2015-10-07 2017-04-13 주식회사 엘지화학 신규 화합물 및 이를 포함하는 유기 발광 소자
KR101781739B1 (ko) * 2015-10-07 2017-09-25 주식회사 엘지화학 신규 화합물 및 이를 포함하는 유기 발광 소자
EP3168894B8 (en) 2015-11-10 2023-07-26 Novaled GmbH N-doped semiconducting material comprising two metal dopants
EP3168324A1 (en) 2015-11-10 2017-05-17 Novaled GmbH Process for making a metal containing layer
US10886491B2 (en) 2015-11-10 2021-01-05 Novaled Gmbh Process for making a metal containing layer
EP3168886B8 (en) 2015-11-10 2023-07-26 Novaled GmbH Metallic layer comprising alkali metal and second metal
EP3171418B1 (en) * 2015-11-23 2024-12-11 Novaled GmbH Organic semiconductive layer comprising phosphine oxide compounds
GB2544768A (en) * 2015-11-25 2017-05-31 Cambridge Display Tech Ltd Charge transfer salt, electronic device and method of forming the same
EP3208863B1 (en) 2016-02-22 2019-10-23 Novaled GmbH Charge transporting semi-conducting material and electronic device comprising it
KR102616579B1 (ko) 2016-04-08 2023-12-22 삼성디스플레이 주식회사 유기 발광 소자
EP3252841B1 (en) * 2016-05-30 2026-04-01 Novaled GmbH Organic light emitting diode comprising an organic semiconductor layer
CN107464885B (zh) * 2016-06-06 2019-01-18 清华大学 一种有机电致发光器件
WO2017220660A1 (en) 2016-06-22 2017-12-28 Novaled Gmbh Phosphepine matrix compound for a semiconducting material
JP7082984B2 (ja) 2017-02-20 2022-06-09 ノヴァレッド ゲーエムベーハー 電子半導体デバイスおよびその電子半導体デバイスの製造方法および化合物
DE102017111137B4 (de) 2017-05-22 2025-07-10 Novaled Gmbh Organische elektrolumineszente Vorrichtung
EP3425692B1 (en) * 2017-07-07 2023-04-05 Novaled GmbH Organic electroluminescent device comprising an electron injection layer with zero-valent metal
CN107528007B (zh) 2017-07-28 2020-03-10 上海天马有机发光显示技术有限公司 一种有机发光二极管、显示面板及显示装置
KR102455727B1 (ko) * 2017-11-13 2022-10-19 삼성디스플레이 주식회사 유기 발광 소자 및 이를 포함하는 유기 발광 표시장치
EP3502116B1 (en) 2017-12-20 2020-11-25 Novaled GmbH Compound and an organic semiconducting layer comprising the same
TWI713848B (zh) * 2018-05-18 2020-12-21 國立交通大學 有機發光元件
EP3582280B1 (en) * 2018-06-14 2024-03-20 Novaled GmbH Organic material for an electronic optoelectronic device and electronic device comprising the organic material
CN109004092A (zh) * 2018-06-29 2018-12-14 云谷（固安）科技有限公司 有机电致发光器件和有机电致发光装置
EP3597724B1 (en) 2018-07-17 2020-11-11 Samsung Electronics Co., Ltd. Light emitting device and display device including the same
CN109524571B (zh) * 2018-09-28 2021-05-14 清华大学 基于惰性金属实现电子传输材料n型掺杂的方法及其应用
KR20210070366A (ko) 2018-10-12 2021-06-14 메사추세츠 인스티튜트 오브 테크놀로지 결함 도핑된 재료들의 탄성 변형 엔지니어링
WO2020130934A1 (en) * 2018-12-21 2020-06-25 National University Of Singapore N-doped electrically conductive organic materials
KR102500996B1 (ko) 2019-07-12 2023-02-20 삼성디스플레이 주식회사 발광 소자 및 이를 포함하는 표시 패널
KR102330920B1 (ko) 2019-11-12 2021-11-25 고려대학교 산학협력단 전기장을 이용한 도핑 방법
CN111961082A (zh) * 2020-09-17 2020-11-20 上海天马有机发光显示技术有限公司 一种化合物、有机光电装置和电子设备
KR20220119226A (ko) * 2021-02-19 2022-08-29 삼성디스플레이 주식회사 발광 소자 및 이를 포함한 전자 장치
KR20220145974A (ko) * 2021-04-22 2022-11-01 삼성디스플레이 주식회사 발광 소자 및 이를 포함하는 전자 장치
KR102927096B1 (ko) * 2021-06-25 2026-02-13 삼성디스플레이 주식회사 유기금속 화합물, 이를 포함한 발광 소자 및 상기 발광 소자를 포함한 전자 장치
KR20230111636A (ko) * 2022-01-17 2023-07-26 삼성디스플레이 주식회사 표시장치
CN117210219B (zh) * 2023-06-05 2026-01-23 宇瑞(上海)化学有限公司 一种oled发光组合物及包含所述组合物的电致发光器件

Family Cites Families (46)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5093698A (en) 1991-02-12 1992-03-03 Kabushiki Kaisha Toshiba Organic electroluminescent device
CN1229415C (zh) * 1995-07-28 2005-11-30 陶氏环球技术公司 2,7－芳基－9－取代的芴和9－取代的芴的低聚物和聚合物
JPH10270171A (ja) 1997-01-27 1998-10-09 Junji Kido 有機エレクトロルミネッセント素子
US6107452A (en) * 1998-10-09 2000-08-22 International Business Machines Corporation Thermally and/or photochemically crosslinked electroactive polymers in the manufacture of opto-electronic devices
JP4876333B2 (ja) 2000-06-08 2012-02-15 東レ株式会社 発光素子
DE10058578C2 (de) 2000-11-20 2002-11-28 Univ Dresden Tech Lichtemittierendes Bauelement mit organischen Schichten
DE10116876B4 (de) 2001-04-04 2004-09-23 Infineon Technologies Ag Verfahren zur Dotierung elektrisch leitfähiger organischer Verbindungen, organischer Feldeffekttransistor sowie Verfahren zu dessen Herstellung
US6936961B2 (en) * 2003-05-13 2005-08-30 Eastman Kodak Company Cascaded organic electroluminescent device having connecting units with N-type and P-type organic layers
US20070001151A1 (en) * 2005-01-12 2007-01-04 Sapochak Linda S Organic materials with tunable electric and electroluminescent properties
DE102004010954A1 (de) 2004-03-03 2005-10-06 Novaled Gmbh Verwendung eines Metallkomplexes als n-Dotand für ein organisches halbleitendes Matrixmaterial, organisches Halbleitermaterial und elektronisches Bauteil
US7507694B2 (en) 2004-03-12 2009-03-24 Halliburton Energy Services, Inc. Surfactant-free emulsions and methods of use thereof
DE112005002603A5 (de) 2004-08-13 2007-08-09 Novaled Gmbh Schichtanordnung für ein Lichtemittierendes Bauelement
JP4725056B2 (ja) * 2004-08-31 2011-07-13 東レ株式会社 発光素子材料および発光素子
DE602004006275T2 (de) 2004-10-07 2007-12-20 Novaled Ag Verfahren zur Dotierung von einem Halbleitermaterial mit Cäsium
US20080233410A1 (en) * 2005-11-17 2008-09-25 Idemitsu Kosan Co., Ltd. Transition metal complex compound
EP1939320B1 (de) 2005-12-07 2013-08-21 Novaled AG Verfahren zum Abscheiden eines Aufdampfmaterials
DE602006001930D1 (de) 2005-12-23 2008-09-04 Novaled Ag tur von organischen Schichten
EP1804308B1 (en) 2005-12-23 2012-04-04 Novaled AG An organic light emitting device with a plurality of organic electroluminescent units stacked upon each other
EP1837927A1 (de) 2006-03-22 2007-09-26 Novaled AG Verwendung von heterocyclischen Radikalen zur Dotierung von organischen Halbleitern
US7830081B2 (en) * 2006-03-22 2010-11-09 General Electric Company Optoelectronic devices with multilayered structures
DE102007012794B3 (de) 2007-03-16 2008-06-19 Novaled Ag Pyrido[3,2-h]chinazoline und/oder deren 5,6-Dihydroderivate, deren Herstellungsverfahren und diese enthaltendes dotiertes organisches Halbleitermaterial
JP2008244012A (ja) * 2007-03-26 2008-10-09 Fujifilm Corp 有機電界発光素子
US20080241518A1 (en) * 2007-03-26 2008-10-02 Tasuku Satou Organic electroluminescence element
JP5081010B2 (ja) * 2007-03-26 2012-11-21 富士フイルム株式会社 有機電界発光素子
JP5230218B2 (ja) * 2007-03-26 2013-07-10 ユー・ディー・シー アイルランド リミテッド 有機電界発光素子
JP2009076508A (ja) 2007-09-18 2009-04-09 Fujifilm Corp 有機電界発光素子
CN101919310A (zh) * 2008-01-18 2010-12-15 Lg化学株式会社 有机发光器件及其制备方法
DE102008011185A1 (de) 2008-02-27 2009-09-03 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung einer dotierten organischen halbleitenden Schicht
KR101015277B1 (ko) * 2008-12-10 2011-02-15 삼성모바일디스플레이주식회사 증발원
US8603642B2 (en) 2009-05-13 2013-12-10 Global Oled Technology Llc Internal connector for organic electronic devices
JP5722220B2 (ja) * 2009-08-18 2015-05-20 大電株式会社 有機電界発光素子
EP2395571B1 (en) 2010-06-10 2013-12-04 Novaled AG Organic electronic device comprising an organic semiconducting material
EP2595208A1 (en) * 2010-07-13 2013-05-22 Toray Industries, Inc. Light emitting element
KR20120020901A (ko) * 2010-08-31 2012-03-08 롬엔드하스전자재료코리아유한회사 신규한 유기 전자재료용 화합물 및 이를 채용하고 있는 유기 전계 발광 소자
EP2452946B1 (en) 2010-11-16 2014-05-07 Novaled AG Pyridylphosphinoxides for organic electronic device and organic electronic device
DE102010055285A1 (de) * 2010-12-21 2012-06-21 Solarion Ag Photovoltaik Verdampferquelle, Verdampferkammer und Beschichtungsverfahren
JP5611086B2 (ja) * 2011-03-10 2014-10-22 パナソニック株式会社 蒸着用ボートとこれを使用した成膜方法
CN102229623B (zh) * 2011-05-10 2013-12-25 南京邮电大学 螺芴氧杂蒽磷氧类电致磷光主体材料及其合成和应用方法
EP2719743B1 (en) 2011-06-13 2018-08-01 LG Chem, Ltd. Novel compounds and organic electronic device using same
KR102051790B1 (ko) * 2011-08-22 2019-12-04 메르크 파텐트 게엠베하 유기 전계발광 디바이스
JP6170501B2 (ja) 2011-11-30 2017-07-26 ノヴァレッド ゲーエムベーハー ディスプレイ
CN104115296B (zh) * 2011-11-30 2016-09-14 诺瓦尔德股份有限公司 有机电子器件
WO2013118507A1 (ja) * 2012-02-10 2013-08-15 出光興産株式会社 有機エレクトロルミネッセンス素子用材料及びそれを用いた有機エレクトロルミネッセンス素子
EP2860782B1 (en) * 2013-10-09 2019-04-17 Novaled GmbH Semiconducting material comprising a phosphine oxide matrix and metal salt
EP2887412B1 (en) * 2013-12-23 2016-07-27 Novaled GmbH Semiconducting material
EP3079179A1 (en) * 2015-04-08 2016-10-12 Novaled GmbH Semiconducting material comprising a phosphine oxide matrix and metal salt

Similar Documents

Publication Publication Date Title
JP2020025121A5 (https=)
KR102566750B1 (ko) 전기적 ｎ-도판트 및 전자 수송 매트릭스를 포함하는 유기 반도체성 물질, 및 이러한 반도체성 물질을 포함하는 전자 장치
KR101794735B1 (ko) 금속 할라이드 페로브스카이트 발광 소자 및 이의 제조방법
CN108701773B (zh) 包含用于有机发光二极管(oled)的基质化合物混合物的电子传输层
KR101777551B1 (ko) 전하 주입 및 수송 층
KR102428200B1 (ko) 산화환원-도핑된 전자 수송층 및 보조 전자 수송층을 포함하는 유기 전계발광 장치
US20180013072A1 (en) Organic electroluminescent element
EP3406752A1 (en) Method for preparing an electronic device, electronic device obtainable this way and compounds for use therein
CN110462865B (zh) 包括包含发光层、空穴传输层和电子传输层的限定层布置的电致发光器件
KR101650705B1 (ko) 산화 그래핀 기반 유기 발광 다이오드 및 이의 제조 방법
JP2014506246A5 (https=)
KR20190076003A (ko) 전자 장치용 화합물, 전자 장치 및 디스플레이 장치
WO2019154713A1 (en) Organic material for an electronic optoelectronic device and electronic device comprising the organic material
KR20150077587A (ko) 유기 전계 발광 소자
KR102640937B1 (ko) 전자 소자에 포함된 반도전층에서의 포스핀 옥사이드 화합물의 용도
WO2020074379A1 (en) Organic light emitting device
Lee et al. Temporal stability of blue phosphorescent organic light-emitting diodes affected by thermal annealing of emitting layers
TW201726598A (zh) 電氣化學發光電池之發光層用添加劑、電氣化學發光電池之發光層形成用組合物以及電氣化學發光電池
KR20160139954A (ko) 화합물 및 이를 포함하는 유기전계 발광소자
JP6908272B2 (ja) イオン性化合物キャリア注入材料を用いた有機ｅｌ素子
TW201231614A (en) Novel compound and organic light-emitting diode, display and illuminating device using the same
CN1918723A (zh) 电致磷光元件
JP2015216095A (ja) 電気化学発光セル及び電気化学発光セルの発光層形成用組成物
Ebe et al. Solution-Processed Organic LEDs and Perovskite LEDs
EP4106034A1 (en) Organic electronic device comprising a metal compound comprising metal cation and at least one borate anion of formula (i), display device comprising the organic electronic device, use of the metal compound in an organic electronic device, and method for preparation of the organic electronic device